CN115537919B - High-temperature gas suspension rotating mechanism - Google Patents
High-temperature gas suspension rotating mechanism Download PDFInfo
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- CN115537919B CN115537919B CN202211353247.2A CN202211353247A CN115537919B CN 115537919 B CN115537919 B CN 115537919B CN 202211353247 A CN202211353247 A CN 202211353247A CN 115537919 B CN115537919 B CN 115537919B
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- 239000000725 suspension Substances 0.000 title claims abstract description 29
- 230000007246 mechanism Effects 0.000 title claims abstract description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 22
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 235000012431 wafers Nutrition 0.000 claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 11
- 210000000078 claw Anatomy 0.000 claims description 33
- 230000000903 blocking effect Effects 0.000 claims description 12
- 238000007789 sealing Methods 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 230000001154 acute effect Effects 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 235000017166 Bambusa arundinacea Nutrition 0.000 claims description 2
- 235000017491 Bambusa tulda Nutrition 0.000 claims description 2
- 241001330002 Bambuseae Species 0.000 claims description 2
- 235000015334 Phyllostachys viridis Nutrition 0.000 claims description 2
- 239000011425 bamboo Substances 0.000 claims description 2
- 230000001360 synchronised effect Effects 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000005096 rolling process Methods 0.000 description 7
- 230000009471 action Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000005339 levitation Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
Abstract
The invention discloses a high-temperature gas suspension rotating mechanism, which relates to the field of uniform deposition of silicon carbide epitaxial wafers and solves the problem of poor stability of the conventional gas phase deposition reaction by rotating a tray through atmosphere flow.
Description
Technical Field
The invention relates to the field of uniform deposition of silicon carbide epitaxial wafers, in particular to a high-temperature gas suspension rotating mechanism.
Background
The silicon carbide epitaxial chemical vapor deposition system is used for depositing and growing silicon carbide crystals on the surface of the silicon carbide substrate to form a silicon carbide epitaxial layer, and the silicon carbide epitaxial layer is influenced by factors such as temperature, air pressure, reaction gas and the like in the growth process of the epitaxial layer.
The prior Chinese published patent CN104046959B discloses a chemical vapor deposition device for epitaxial growth of silicon carbide, the graphite boat which is stacked is adopted by the arranged induction heating component, the number of the graphite boats can be increased and decreased according to the requirement under the condition that the characteristic sizes of a reaction cavity and an induction coil are not increased, on one hand, the space of the reaction cavity can be fully utilized for epitaxial growth, the productivity is provided, on the other hand, the uniformity of an airflow field and the uniformity of the temperature in the reaction cavity can be improved, the problem that the structure of the reaction cavity is complicated along with the improvement of the productivity is solved, meanwhile, an air groove is arranged between two adjacent supporting tables, a flange arranged between a pit and the upper end surface of a base, and an air gap is arranged between the outer edge of the supporting table and the flange, and the arrangement of the air groove and the air gap can drive a tray arranged on the supporting table to rotate in a pneumatic mode, so that the uniformity of an epitaxial film is improved;
the existing injection through reaction gas and the discharge after the reaction utilize the air current drive to make the tray rotate for the carborundum wafer of tray upper end rotates in vacuum chamber's inside, in order to realize that the carborundum wafer can receive even mixed gas and temperature through self rotation, thereby improve epitaxial film's homogeneity, but when gas flows to the air gap through a plurality of air grooves, the equivalent flow of unable control air current, the tray stands on the top of conical support post simultaneously, in the rotatory in-process, the tray can shake because of the unstable influence of air current, or there is the friction between the marginal portion of tray and the flange, can't guarantee the carborundum wafer of tray with the upper end at rotatory stability and homogeneity, for this reason, we propose a high temperature gas suspension rotary mechanism.
Disclosure of Invention
The present invention is directed to a high temperature gas suspension rotation mechanism capable of stably rotating a silicon carbide wafer by inputting a protective atmosphere, so as to solve the problems set forth in the background art.
In order to achieve the above purpose, the present invention provides the following technical solutions:
the high-temperature gas suspension rotating mechanism comprises a lower cavity cover and an upper cavity cover which are arranged in a horizontal epitaxial furnace, wherein the lower cavity cover is matched with the upper cavity cover, a base barrel is fixedly arranged at the bottom of the center of the lower cavity cover in a penetrating manner, a tray for bearing silicon carbide wafers is arranged at the upper end of the base barrel, a plurality of atmosphere pressurizing input pipes which are distributed at equal intervals in circumference are fixedly arranged in the lower cavity cover corresponding to the outer side of the tray, the bottom of the atmosphere pressurizing input pipes extends to the outer part of the lower cavity cover, and a sealing bottom cover is fixedly arranged at the bottom of the base barrel through bolts; the suspension rotating assembly can enable the tray to perform suspension rotation when the silicon carbide wafer performs vapor deposition reaction, and is arranged between the tray and the base barrel; the assistance component can be the rotation of the suspension rotation component assistance component is arranged in the base barrel, when chemical vapor deposition operation is carried out, the upper cavity cover and the lower cavity cover are covered, and the upper cavity cover and the lower cavity cover are in a sealing state, wherein the bottom of the base barrel extends to the outer part of the lower cavity cover, and the arc spring is affected by high temperature by a small amount of reduction.
Preferably, the suspension rotating assembly comprises an arc surface disc arranged at the lower part of the tray, an arc claw drainage disc is arranged at the upper end of the arc surface disc, the long arc side surface of an arc claw drainage disc is vertical to the upper end surface of the arc surface disc, the arc claw of the arc claw drainage disc is close to the central connection part of the arc claw drainage disc and is provided with an inclined part, the port orientation of the atmosphere pressurizing input pipe is an acute angle with the horizontal bottom surface of the arc surface disc, the port of the atmosphere pressurizing input pipe is inclined upwards, the port orientations of the atmosphere pressurizing input pipe are distributed in a staggered manner and are deflected to the circle center of the arc surface disc, the upper end surface of the arc claw drainage disc is fixedly connected with the tray through a support column, the bottom of the arc surface disc is provided with a dragging part, the outer part of the dragging part is provided with a synchronizing part, and the pressure atmosphere input by the atmosphere pressurizing input pipe can be blown on the upper end surface and the lower end surface of the arc surface disc.
Preferably, the dragging piece includes fixed mounting in the spacing post at base section of thick bamboo top, just the outside fixed sleeve of spacing post has two separation blades, two install the spacing lantern ring between the separation blade, the inner wall rotation of spacing lantern ring has inlayed a plurality of and is circumference equidistance distributed's round ball body, and a plurality of the round ball body all with the surface activity laminating of spacing post, the up-and-down terminal surface of spacing lantern ring all rotates and inlays a plurality of and is circumference equidistance distributed's oval sphere, and two sets of oval sphere corresponds with two the up end and the activity laminating of lower terminal surface of separation blade, the outside of spacing lantern ring has the ring through connecting rod fixed mounting, just the surface rotation of ring cup joints a plurality of and is circumference equidistance distributed's gear, the outer wall fixed mounting of gear has the bracing piece, just the bracing piece is kept away from the one end fixed mounting rolling ball of gear, a plurality of straight flute has been seted up to the bottom of arc face dish, just the rolling ball slide inlay in the inside of straight flute, wherein, through the gomphosis of bracing piece and straight flute is very high in order to prevent to suspend the arc face to the cambered surface to pull.
Preferably, the synchronizing piece comprises a straight tooth lantern ring which is sleeved on the outer surface of the limiting lantern ring in a sliding manner, a plurality of gears are movably meshed with the straight tooth lantern ring, a plurality of sliding grooves are formed in the outer wall of the limiting lantern ring, a plurality of sliding blocks are fixedly mounted on the inner wall of the straight tooth lantern ring, the sliding blocks are embedded in the sliding grooves in a sliding manner, and the angle of swinging of each supporting rod can be guaranteed to be consistent through simultaneous meshing of the straight tooth lantern ring and the plurality of gears.
Preferably, the power assisting component comprises a cavity arranged in the base cylinder, a rotating shaft is fixedly arranged at the bottom of the arc-shaped disc, the lower end of the rotating shaft is movably embedded in the cavity, the base cylinder and the limiting column are internally provided with accommodating cavities matched with the rotating shaft, the outer wall of the bottom of the rotating shaft is fixedly provided with an arc-shaped spring through a fixing piece, the other end of the arc-shaped spring is fixedly provided with a double-end circular top plate, and the accommodating cavities are used for enabling the bottom of the rotating shaft to penetrate through the limiting column and the base cylinder and enter the cavity.
Preferably, the double-end dome plate comprises an upper dome portion and a lower dome portion, the arc-shaped spring is fixed with the upper dome portion, the outer diameter of the arc-shaped spring is smaller than the outer diameter of the upper dome portion, a blocking semicircular jack column is arranged on the outer side of the lower dome portion, the blocking semicircular jack column is far away from one end of the rotating shaft and is slidably embedded in the base cylinder, the blocking semicircular jack column is close to one end of the rotating shaft, a straight face portion is arranged at one end of the rotating shaft, the straight face portion is movably attached to the lower dome portion, a limiting piece is arranged at the upper end of the blocking semicircular jack column, and the arc-shaped spring is kept arc-shaped in a compressed or extended state and is not affected by the double-end dome plate to fall down.
Preferably, the limiting part comprises a round hole groove formed in the inner wall of the base cylinder, the round hole groove is communicated with the accommodating cavity, a connecting arm is fixedly arranged at the upper end of the blocking semicircular jack post, a magnet II is fixedly arranged at the upper end of the connecting arm, the magnet II is slidably embedded in the round hole groove, the connecting arm and the base cylinder are in sliding connection, the magnet II is far away from one end of the rotating shaft, the magnet I is fixedly connected with the round hole groove, the magnet II is far away from one end of the magnet I, a straight circular jack post is fixedly arranged at one end of the magnet I, an arc limiting groove is formed in the outer surface of the rotating shaft, the end part of the straight circular jack post far away from the magnet II is movably embedded with the arc limiting groove, the magnetic poles of the magnet I and the magnet II are identical, the repulsive force generated by the same polarity can enable the round end head of the straight circular jack post to be tightly embedded in the arc limiting groove, and limiting the rotating shaft.
Preferably, the radius of the arc-shaped limiting groove is smaller than the transverse contact length of the straight surface part and the lower dome part, namely when the straight dome column is separated from the arc-shaped limiting groove, a small part of the straight surface part still contacts with the lower dome part, and the lower dome part is continuously limited.
Preferably, the inner diameter of the accommodating cavity is larger than the outer diameter of the rotating shaft, namely, the rotating shaft is not in contact with the limit column and the base cylinder when being embedded into the cavity.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, under the action of the arc surface disc, the arc claw drainage disc and the atmosphere pressurizing input pipe, when the extension part of the arc surface disc is blown by atmosphere, the pressure difference is generated between the upper end surface and the lower end surface of the arc surface disc, and a lifting force is formed, so that the arc surface disc floats upwards with the tray, the upward floating stability of the arc surface disc can be ensured by the dragging piece and the synchronizing piece, when the internal temperature of the lower cavity cover and the upper cavity cover rises to perform vapor deposition, the limiting piece loses the limitation on the rotating shaft due to the high temperature, the rotating shaft can rotate rapidly under the action of the arc spring, the initial speed is provided for the rotation of the arc surface disc and the tray, meanwhile, the stable suspension rotation of the tray can be realized through the guiding of the flow of the arc claw drainage disc, the vapor deposition of silicon carbide wafers can be ensured to be uniformly and stably performed, and epitaxial crystal is grown.
Drawings
FIG. 1 is a schematic diagram of the overall structure of the present invention;
FIG. 2 is a schematic view of the position distribution of the levitation rotation assembly of the present invention;
FIG. 3 is a front cross-sectional view of the present invention;
FIG. 4 is a top view of an atmospheric plenum input tube and a cambered surface disk of the invention;
FIG. 5 is a schematic view of the structure of the inclined part of the present invention;
FIG. 6 is a schematic view of the spur collar and gear engagement structure of the present invention;
FIG. 7 is a schematic view of a chute and slider structure according to the present invention;
FIG. 8 is a schematic view of the sphere and ellipsoid structures of the present invention;
FIG. 9 is a schematic view of an arcuate spring structure of the present invention;
fig. 10 is an enlarged view of fig. 9 a in accordance with the present invention.
In the figure: 1-a lower cavity cover; 2-an upper cavity cover; 3-a tray; 4-an atmosphere pressurization input pipe; 5-a base barrel; 6-a levitation rotation assembly; 7-a power assisting component; 8-limiting pieces; 9-a drag; 10-synchronizing member; 11-arc surface plate; 12-arc claw drainage tray; 13-an inclined portion; 14-limiting columns; 15-a baffle; 16-a limit collar; 17-a sphere; 18-ellipsoids; 19-a straight-tooth collar; 20-sliding grooves; 21-a slider; 22-connecting rod; 23-bending; 24-gear; 25-supporting rods; 26-straight grooves; 27-a ball; 28-rotating shaft; 29-a cavity; 30-a circular hole groove; 31-magnet one; 32-magnet II; 33-a right circular jack; 34-a connecting arm; 35-sealing the bottom cover; 36-arc spring; 37-double-ended dome plate; 38-blocking a semicircular jack column; 39-straight face; 40-arc limiting grooves; 41-lower dome; 42-upper dome.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
Referring to fig. 1-3, a high temperature air suspension rotating mechanism in the drawings comprises a lower cavity cover 1 and an upper cavity cover 2 which are arranged in a horizontal epitaxial furnace, wherein the lower cavity cover 1 is matched with the upper cavity cover 2, a base cylinder 5 is fixedly arranged at the bottom of the center of the lower cavity cover 1 in a penetrating manner, a tray 3 for bearing silicon carbide wafers is arranged at the upper end of the base cylinder 5, a plurality of atmosphere pressurizing input pipes 4 which are distributed at equal intervals in circumference are fixedly arranged at the inner side of the lower cavity cover 1 corresponding to the outer side of the tray 3, the bottom of the atmosphere pressurizing input pipes 4 extends to the outer side of the lower cavity cover 1, and a sealing bottom cover 35 is fixedly arranged at the bottom of the base cylinder 5 through bolts; a suspension rotation assembly 6 for suspending and rotating the tray 3 during the vapor deposition reaction of the silicon carbide wafer, the suspension rotation assembly 6 being installed between the tray 3 and the base cylinder 5; the booster component 7 is arranged in the base cylinder 5, and the upper cavity cover 2 and the lower cavity cover 1 are covered when chemical vapor deposition operation is carried out, and are in a sealing state, wherein the bottom of the base cylinder 5 extends to the outer part of the lower cavity cover 1, the arc spring 36 is affected by high temperature by a small amount, and an exhaust pipe can be inserted in the upper cavity cover 2 or the lower cavity cover 1.
Referring to fig. 4 and 5, in the illustration, the suspension rotating assembly 6 includes an arc surface plate 11 installed at the lower part of the tray 3, an arc claw drainage plate 12 is fixedly installed at the upper end of the arc surface plate 11, the long arc side surface of the arc claw drainage plate 12 is perpendicular to the upper end surface of the arc surface plate 11, an inclined part 13 is arranged at the joint of the arc claw drainage plate 12 near the center of the arc claw drainage plate 12, the port of the atmosphere pressurizing input pipe 4 faces at an acute angle with the horizontal bottom surface of the arc surface plate 11, the port of the atmosphere pressurizing input pipe 4 is inclined upwards, the port of the atmosphere pressurizing input pipes 4 faces at a staggered distribution, and is biased towards the center of the arc surface plate 11, the upper end surface of the arc claw drainage plate 12 is fixedly connected with the tray 3 through a support, a dragging piece 9 is arranged at the bottom of the arc surface plate 11, a synchronizing piece 10 is arranged outside the dragging piece 9, and the pressure atmosphere input by the atmosphere pressurizing input pipe 4 can be blown on the upper end surface and lower end surface of the arc surface plate 11.
Referring to fig. 6-8, the drawing member 9 includes a limiting column 14 fixedly mounted on the top of the base barrel 5, two baffle plates 15 are fixedly sleeved on the outer portion of the limiting column 14, a limiting collar 16 is mounted between the two baffle plates 15, a plurality of round balls 17 distributed at equal intervals circumferentially are rotationally embedded in the inner wall of the limiting collar 16, the plurality of round balls 17 are movably attached to the outer surface of the limiting column 14, a plurality of elliptical balls 18 distributed at equal intervals circumferentially are rotationally embedded in the upper end surface and the lower end surface of the limiting collar 16, the two groups of elliptical balls 18 are correspondingly movably attached to the upper end surface and the lower end surface of the two baffle plates 15, a curved ring 23 is fixedly mounted on the outer surface of the limiting collar 16 through a connecting rod 22, a plurality of gears 24 distributed at equal intervals circumferentially are rotationally sleeved on the outer surface of the curved ring 23, a supporting rod 25 is fixedly mounted on one end of the supporting rod 25 far away from the gears 24, a plurality of straight grooves 26 are formed in the bottom of the cambered surface disc 11, and the rolling balls 27 are slidably embedded in the inner portion of the grooves 26, wherein the embedding of the supporting rod 25 and the straight grooves 26 are correspondingly attached to the cambered surface 11, and the cambered surface 11 is a high-suspended surface of the cambered surface is prevented from being pulled by the cambered surface 11.
Referring to fig. 7, in the illustration, the synchronizing member 10 includes a straight-tooth collar 19 slidably sleeved on an outer surface of the limiting collar 16, and a plurality of gears 24 movably engaged with the straight-tooth collar 19, a plurality of sliding grooves 20 are provided on an outer wall of the limiting collar 16, a plurality of sliding blocks 21 are fixedly mounted on an inner wall of the straight-tooth collar 19, and the sliding blocks 21 are slidably embedded in the sliding grooves 20, and the swinging angle of each supporting rod 25 can be guaranteed to be consistent by simultaneously engaging the straight-tooth collar 19 with the plurality of gears 24.
Working principle that silicon carbide wafer can stably rotate through the input of protective atmosphere: placing a silicon carbide wafer on the upper part of a tray 3, closing an upper cavity cover 2 and a lower cavity cover 1, vacuumizing the interior, heating the space between the upper cavity cover 2 and the lower cavity cover 1 through a horizontal epitaxial furnace, and introducing a reaction atmosphere and a protective atmosphere through a plurality of atmosphere pressurizing input pipes 4 while heating, wherein the atmosphere is input under pressurizing and has a certain flow rate;
at this time, the nozzle of the atmosphere pressurizing input pipe 4 is inclined upwards by 10 degrees and outputs the atmosphere against the extension part of the arc surface plate 11, when the atmosphere flows through the surfaces of the upper end and the lower end of the arc surface plate 11, the upper end of the arc surface plate 11 is in a curved arc shape, the lower end is in a straight surface, according to the Bernoulli principle, when the flow speed of the atmosphere at the lower end of the arc surface plate 11 is smaller than that at the upper end, the upper end and the lower end of the arc surface plate 11 form pressure difference and generate lifting force to enable the arc surface plate 11 to float upwards, meanwhile, when the atmosphere flows through the upper surface of the arc surface plate 11, the flow of the atmosphere can be subjected to resistance through the guidance of the arc claw drainage plate 12 and the obstruction of the vertical surface, and after the arc claw drainage plate 12 receives the thrust of the atmosphere, the arc surface plate 11 can be rotated, so that the silicon carbide wafer above the tray 3 can perform vapor deposition reaction in a rotating state and can be uniformly contacted with various atmospheres;
notably, are: in the process of upward floating of the arc surface disk 11, the rolling ball 27 can be pulled through the straight groove 26, meanwhile, the supporting rods 25 are deflected upward, in the process of deflection, one supporting rod 25 is movably meshed with the plurality of gears 24 through the straight tooth lantern ring 19, and when one gear 24 rotates, the other gears 24 can also rotate along with the rotation, so that the stability of the arc surface disk 11 in suspension is ensured;
the inner surface of the limit collar 16 is in rolling contact with the limit post 14 through a plurality of spherical balls 17, and the upper end surface and the lower end surface of the limit collar 16 are in rolling contact with the two baffle plates 15 through the elliptical balls 18, and the rolling friction force is far smaller than the sliding friction force, so that the limit collar 16 is only affected by small friction force in the process of following the arc disc 11 to rotate.
Example 2
Referring to fig. 7 and 9, in this embodiment, for further description of example 1, the power assisting component 7 includes a cavity 29 formed in the base barrel 5, a rotating shaft 28 is fixedly mounted at the bottom of the arc disc 11, the lower end of the rotating shaft 28 is movably embedded in the cavity 29, accommodating cavities matched with the rotating shaft 28 are formed in the base barrel 5 and the limiting column 14, an arc spring 36 is fixedly mounted on the outer wall of the bottom of the rotating shaft 28 through a fixing piece, a double-end circular top plate 37 is fixedly mounted at the other end of the arc spring 36, and the accommodating cavities are used for allowing the bottom of the rotating shaft 28 to penetrate through the limiting column 14 and the base barrel 5 and enter the cavity 29.
Referring to fig. 9 and 10, in the drawings, the double-end dome plate 37 includes an upper dome portion 42 and a lower dome portion 41, the arc spring 36 is fixed with the upper dome portion 42, the outer diameter of the arc spring 36 is smaller than that of the upper dome portion 42, the blocking semi-circular post 38 is mounted on the outer side of the lower dome portion 41, one end of the blocking semi-circular post 38 far away from the rotating shaft 28 is slidably embedded in the base cylinder 5, a straight surface portion 39 is formed at one end of the blocking semi-circular post 38 near the rotating shaft 28, the straight surface portion 39 is movably attached to the lower dome portion 41, a limiting member 8 is arranged at the upper end of the blocking semi-circular post 38, and the arc spring 36 keeps arc shape in a compressed or extended state and is not affected by the falling of the double-end dome plate 37.
Referring to fig. 9, in the illustration, the limiting member 8 includes a circular hole groove 30 formed in an inner wall of the base cylinder 5, the circular hole groove 30 is communicated with the accommodating cavity, a connecting arm 34 is fixedly mounted at an upper end of the blocking semicircular jack-up post 38, a second magnet 32 is fixedly mounted at an upper end of the connecting arm 34, the second magnet 32 is slidably embedded in the circular hole groove 30, the connecting arm 34 is slidably connected with the base cylinder 5, a first magnet 31 is disposed at an end of the second magnet 32 far away from the rotating shaft 28, the first magnet 31 is fixedly connected with the circular hole groove 30, a straight circular jack-up post 33 is fixedly mounted at an end of the second magnet 32 far away from the first magnet 31, an arc-shaped limiting groove 40 is formed in an outer surface of the rotating shaft 28, an end portion of the straight circular jack-up post 33 far away from the second magnet 32 is movably embedded with the arc-shaped limiting groove 40, magnetic poles of end faces of the first magnet 31 and the second magnet 32 close to each other are identical, and repulsive force generated by the like repulsion can enable a round end of the straight circular jack-up post 33 to be tightly embedded in the arc-shaped limiting groove 40 to limit the rotating shaft 28.
Referring to fig. 10, the radius of the arc-shaped limiting groove 40 is smaller than the lateral contact length of the straight surface portion 39 and the lower dome portion 41, i.e. when the straight dome column 33 is separated from the arc-shaped limiting groove 40, a small portion of the straight surface portion 39 still contacts the lower dome portion 41 to limit the lower dome portion 41.
Referring to fig. 9, the inner diameter of the accommodating cavity is larger than the outer diameter of the rotating shaft 28, i.e. the rotating shaft 28 is not in contact with the limiting post 14 and the base barrel 5 when it is embedded in the cavity 29.
In this embodiment: when the atmosphere is input and the temperature rises just, because the gomphosis of straight jack post 33 and arc spacing groove 40 and the mutual repulsion of magnet one 31 and magnet two 32, alright be effective spacing to pivot 28, make cambered surface dish 11 unable rotation, after the temperature risees gradually, the magnetism of magnet one 31 and magnet two 32 is gradual to weaken, until there is no repulsive force influence between the two, at this moment, arc spring 36 is in the compressed state, and the elasticity that produces under the compressed state, can make pivot 28 receive torsional force, the torsional force that pivot 28 received can push out straight jack post 33 through arc spacing groove 40 at this moment, magnet two 32 is by the in-process, accessible linking arm 34 is carried and is blocked semicircle jack post 38 and is moved, after straight jack post 33 breaks away from arc spacing groove 40 completely, at this moment straight face 39 still causes certain to double-end dome plate 37, and under the effect that arc spring 36 produced elasticity, in the course of rotation, its stationary blade follows the clockwise rotation of pivot 28, can be carried out the dome face that blocks semicircle jack post 38 and is pushed, make the top post 38 and make the top post stop, the inner wall of arc plate 37 is continued to rotate, can be carried out the stable, the stable speed of arc plate 11 is carried out to the top plate 11, the top plate is rotated to the steady, the top plate is rotated, can be more stable, the top plate 11 is rotated, can be rotated to the top plate is rotated, can be rotated, the top plate is convenient is suspended, can is rotated, and can be rotated, the top plate is convenient, can is rotated, and can is convenient and can's opposite rotary handle.
Example 3
Referring to fig. 4 and 5, for further description of the present embodiment, the suspension rotating assembly 6 includes an arc surface plate 11 installed at the lower portion of the tray 3, an arc claw drainage plate 12 is fixedly installed at the upper end of the arc surface plate 11, a long arc side surface of the arc claw drainage plate 12 is perpendicular to the upper end surface of the arc surface plate 11, an inclined portion 13 is disposed at a connection position of the arc claw drainage plate 12 near the center of the arc claw drainage plate 12, an acute angle is formed between a port orientation of the atmosphere pressurization input pipe 4 and a horizontal bottom surface of the arc surface plate 11, ports of the atmosphere pressurization input pipe 4 are inclined upward, ports of the atmosphere pressurization input pipes 4 are staggered, and are biased toward a center of the arc surface plate 11, an upper end surface of the arc claw drainage plate 12 is fixedly connected with the tray 3 through a support, a dragging member 9 is disposed at the bottom of the arc surface plate 11, a synchronizing member 10 is disposed outside the dragging member 9, and a pressure atmosphere input by the atmosphere pressurization input pipe 4 can be blown onto the upper end surface and lower end surface of the arc surface plate 11.
In this embodiment: when the atmosphere flows outwards against the arc surface plate 11, the atmosphere can be guided and blocked by the arc claw of the arc claw drainage plate 12 in the flowing process of the upper surface of the arc surface plate 11, so that the air flow flows towards the center of the arc claw drainage plate 12, the blocking of the arc claw drainage plate 12 can simultaneously lead the high-speed flow of the atmosphere, the arc claw drainage plate 12 pushes the arc surface plate 11, and finally the atmosphere flowing to the center of the arc claw drainage plate 12 flows upwards through the guiding of the inclined part 13, and the air flow cannot collide due to the horizontal straight flow, so that the air flow is unstable.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. The utility model provides a high temperature gas suspension rotary mechanism, includes installs in the inside lower die cavity lid (1) of horizontal epitaxial furnace and last die cavity lid (2), lower die cavity lid (1) with go up die cavity lid (2) assorted, its characterized in that: a base cylinder (5) is fixedly arranged at the bottom of the center of the lower cavity cover (1) in a penetrating manner, a tray (3) for bearing silicon carbide wafers is arranged at the upper end of the base cylinder (5), a plurality of atmosphere pressurizing input pipes (4) which are distributed at equal intervals in circumference are fixedly arranged in the lower cavity cover (1) corresponding to the outer side of the tray (3), the bottom of the atmosphere pressurizing input pipes (4) extends to the outer side of the lower cavity cover (1), and a sealing bottom cover (35) is fixedly arranged at the bottom of the base cylinder (5) through bolts;
a suspension rotation assembly (6) which can enable the tray (3) to perform suspension rotation when the silicon carbide wafer performs vapor deposition reaction, wherein the suspension rotation assembly (6) is arranged between the tray (3) and the base cylinder (5);
a booster component (7), wherein the booster component (7) capable of boosting the suspension rotating component (6) to rotate is arranged in the base cylinder (5);
the suspension rotating assembly (6) comprises an arc surface disc (11) arranged at the lower part of the tray (3), an arc claw drainage disc (12) is arranged at the upper end of the arc surface disc (11), the long arc side surface of the arc claw drainage disc (12) is perpendicular to the upper end surface of the arc surface disc (11), an inclined part (13) is arranged at the joint of the arc claw drainage disc (12) near the center of the arc claw drainage disc (12), the port orientation of the atmosphere pressurization input tube (4) forms an acute angle with the horizontal bottom surface of the arc surface disc (11), the ports of the atmosphere pressurization input tube (4) incline upwards, the ports of the atmosphere pressurization input tube (4) are distributed in a staggered mode and are deviated to the circle center of the arc surface disc (11), the upper end surface of the arc claw drainage disc (12) is fixedly connected with the tray (3) through a support column, a dragging piece (9) is arranged at the bottom of the arc claw, and a synchronizing piece (10) is arranged outside the dragging piece (9);
the traction piece (9) comprises a limit column (14) fixedly mounted at the top of the base barrel (5), two baffle plates (15) are fixedly sleeved outside the limit column (14), a limit collar (16) is mounted between the baffle plates (15), a plurality of round balls (17) which are distributed at equal intervals circumferentially are rotationally embedded in the inner wall of the limit collar (16), a plurality of round balls (17) are movably attached to the outer surface of the limit column (14), a plurality of elliptical balls (18) which are distributed at equal intervals circumferentially are rotationally embedded in the upper end face and the lower end face of the limit collar (16), two groups of elliptical balls (18) are movably attached to the upper end face and the lower end face of the baffle plates (15) correspondingly, a curved ring (23) is fixedly mounted outside the limit collar (16) through a connecting rod (22), a plurality of gears (24) which are distributed at equal intervals circumferentially are rotationally embedded in the outer surface of the limit collar (16), a plurality of supporting rods (25) are fixedly mounted on the outer wall of the gears (24), a plurality of supporting rods (25) which are distributed at equal intervals are sleeved on the outer surface of the limit collar (23), a plurality of straight balls (27) are mounted on the outer surfaces of the limit collar (24), and a plurality of supporting rods (27) are mounted on the inner ends of the limit collar (27), and the limit balls (27) are mounted on the limit balls and the limit collar (27) and are provided with the inner surfaces of the limit balls.
The power assisting component (7) comprises a cavity (29) formed in the base barrel (5), a rotating shaft (28) is fixedly arranged at the bottom of the cambered surface disc (11), the lower end of the rotating shaft (28) is movably embedded in the cavity (29), the base barrel (5) and the limiting column (14) are internally provided with accommodating cavities matched with the rotating shaft (28), an arc-shaped spring (36) is fixedly arranged on the outer wall of the bottom of the rotating shaft (28) through a fixing piece, and a double-end circular top plate (37) is fixedly arranged at the other end of the arc-shaped spring (36).
2. The high temperature gas suspension rotation mechanism of claim 1, wherein: the synchronous piece (10) comprises a straight tooth lantern ring (19) which is sleeved on the outer surface of the limiting lantern ring (16) in a sliding mode, a plurality of gears (24) are movably meshed with the straight tooth lantern ring (19), a plurality of sliding grooves (20) are formed in the outer wall of the limiting lantern ring (16), a plurality of sliding blocks (21) are fixedly arranged on the inner wall of the straight tooth lantern ring (19), and the sliding blocks (21) are slidably embedded in the sliding grooves (20).
3. The high temperature gas suspension rotation mechanism of claim 1, wherein: double-end dome board (37) include dome portion (42) and lower dome portion (41), arc spring (36) with dome portion (42) are fixed, just the external diameter of arc spring (36) is less than dome portion (42) external diameter, block semicircle jack-up post (38) are installed in the outside of lower dome portion (41), just block semicircle jack-up post (38) keep away from the one end of pivot (28) slide inlay in the inside of base section of thick bamboo (5), block semicircle jack-up post (38) be close to the one end of pivot (28) has seted up straight face portion (39), just straight face portion (39) with dome portion (41) activity laminating down, the upper end that blocks semicircle jack-up post (38) is equipped with locating part (8).
4. A high temperature gas suspension rotation mechanism according to claim 3, wherein: the limiting piece (8) comprises a round hole groove (30) formed in the inner wall of the base barrel (5), the round hole groove (30) is communicated with the accommodating cavity, a connecting arm (34) is fixedly arranged at the upper end of the blocking semicircular jack post (38), a magnet two (32) is fixedly arranged at the upper end of the connecting arm (34), the magnet two (32) is slidably embedded in the round hole groove (30), the connecting arm (34) is in sliding connection with the base barrel (5), the magnet two (32) is far away from one end of the rotating shaft (28) and is provided with a magnet one (31), the magnet one (31) is fixedly connected with the round hole groove (30), the magnet two (32) is far away from one end of the magnet one (31) and is fixedly provided with a straight circular jack post (33), an arc limiting groove (40) is formed in the outer surface of the rotating shaft (28), the straight circular jack post (33) is far away from the end of the magnet two (32) and is far away from the arc limiting groove (40), and the end of the magnet two ends of the magnet two (31) are close to the same as the two arc limiting grooves (40).
5. The high temperature gas suspension rotation mechanism according to claim 4, wherein: the radius of the arc-shaped limiting groove (40) is smaller than the transverse contact length of the straight face portion (39) and the lower dome portion (41).
6. The high temperature gas suspension rotation mechanism of claim 1, wherein: the inner diameter of the accommodating cavity is larger than the outer diameter of the rotating shaft (28).
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| CN202211353247.2A CN115537919B (en) | 2022-11-01 | 2022-11-01 | High-temperature gas suspension rotating mechanism |
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| CN202211353247.2A CN115537919B (en) | 2022-11-01 | 2022-11-01 | High-temperature gas suspension rotating mechanism |
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| CN115537919B true CN115537919B (en) | 2024-01-19 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5788777A (en) * | 1997-03-06 | 1998-08-04 | Burk, Jr.; Albert A. | Susceptor for an epitaxial growth factor |
| JP2008294217A (en) * | 2007-05-24 | 2008-12-04 | Nuflare Technology Inc | Vapor phase growth device and vapor phase growth method |
| KR20110117417A (en) * | 2010-04-21 | 2011-10-27 | 삼성엘이디 주식회사 | Susceptor for chemical vapor deposition apparatus and chemical vapor deposition apparatus having the same |
| CN110512192A (en) * | 2019-09-20 | 2019-11-29 | 深圳第三代半导体研究院 | A kind of chemical vapor deposition planet pallet device and air inlet method |
| CN110760820A (en) * | 2019-12-05 | 2020-02-07 | 深圳市志橙半导体材料有限公司 | Gas suspension device in vapor deposition furnace |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE60231256D1 (en) * | 2002-12-10 | 2009-04-02 | E T C Epitaxial Technology Ct | susceptor system |
| US9499908B2 (en) * | 2015-02-13 | 2016-11-22 | Eastman Kodak Company | Atomic layer deposition apparatus |
-
2022
- 2022-11-01 CN CN202211353247.2A patent/CN115537919B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5788777A (en) * | 1997-03-06 | 1998-08-04 | Burk, Jr.; Albert A. | Susceptor for an epitaxial growth factor |
| JP2008294217A (en) * | 2007-05-24 | 2008-12-04 | Nuflare Technology Inc | Vapor phase growth device and vapor phase growth method |
| KR20110117417A (en) * | 2010-04-21 | 2011-10-27 | 삼성엘이디 주식회사 | Susceptor for chemical vapor deposition apparatus and chemical vapor deposition apparatus having the same |
| CN110512192A (en) * | 2019-09-20 | 2019-11-29 | 深圳第三代半导体研究院 | A kind of chemical vapor deposition planet pallet device and air inlet method |
| CN110760820A (en) * | 2019-12-05 | 2020-02-07 | 深圳市志橙半导体材料有限公司 | Gas suspension device in vapor deposition furnace |
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