JP2014179489A - Substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To perform liquid processing for a lower surface of a substrate while suppressing reduction in temperature in an outer periphery of the substrate.SOLUTION: A substrate processing apparatus 1 includes an upper nozzle 181 for supplying a chemical liquid having a temperature higher than that of a substrate 9 to a top surface 91 of the substrate 9, and a heating liquid supply nozzle 180b provided between a central axis J1 and the outer peripheral edge of the substrate 9, for supplying a heating liquid having a temperature higher than that of the substrate 9 to a lower surface 92 of the substrate 9. This can suppress or prevent the temperature of the substrate 9 and the temperature of the chemical liquid supplied to the top surface 91 of the substrate 9 from decreasing from the center toward the outer periphery of the substrate 9, and allows etching processing of the lower surface of the substrate 9 using the heating liquid to be performed concurrently with etching processing of the top surface 91. The heating liquid supply nozzle 180b is positioned inside a heating gas supply nozzle for jetting a heating gas for drying the substrate 9, thereby simplifying and downsizing a structure used for heating the lower surface 92 of the substrate 9.

Description

  The present invention relates to a substrate processing apparatus for processing a substrate.

  Conventionally, in a manufacturing process of a semiconductor substrate (hereinafter simply referred to as “substrate”), various processes are performed on the substrate using a substrate processing apparatus. For example, Patent Document 1 discloses a substrate processing apparatus that removes organic substances adhering to a substrate with a removing liquid. In the substrate processing apparatus, the back surface of the substrate is sucked and held by a vacuum chuck. And before supplying a removal liquid to the surface of a board | substrate, the temperature of a board | substrate is brought close to the temperature of a removal liquid by supplying the temperature-controlled pure water with respect to the back surface of a board | substrate from a back surface side liquid nozzle. Alternatively, the temperature of the substrate is brought close to the temperature of the removal liquid by supplying a temperature-controlled nitrogen gas from the back side gas nozzle to the back side of the substrate. Thereby, the uniformity of the temperature of the removal liquid flowing on the surface of the substrate can be improved, and the in-plane uniformity of the organic substance removal process can be improved.

  On the other hand, in the substrate processing apparatus of Patent Document 2, a double tube facing the central portion of the back surface of the substrate is provided. The double pipe has an inner pipe for supplying nitrogen gas and an outer pipe for supplying pure water. In the substrate processing apparatus, when the developer is supplied to the front surface of the substrate, pure water is supplied to the back surface to form a liquid film, thereby preventing the developer from adhering to the back surface. Further, when the substrate is rotated at a high speed and dried, nitrogen gas is supplied to the central portion of the back surface, whereby the liquid in the central portion is moved to a position where the centrifugal force acts.

JP 2004-158588 A JP-A-10-57877

  Incidentally, in the substrate processing apparatus of Patent Document 1, pure water or nitrogen gas cannot be supplied to a portion of the lower surface of the substrate that is adsorbed by the vacuum chuck. For this reason, there is a limit in improving the in-plane uniformity of the substrate temperature. In addition, when processing is performed by supplying a chemical solution to the lower surface of the substrate, if the temperature-controlled nitrogen gas is supplied to the lower surface, the chemical solution supplied to the lower surface may be scattered by the nitrogen gas.

  The present invention has been made in view of the above problems, and an object of the present invention is to perform liquid treatment on the lower surface of a substrate while suppressing a temperature drop at the outer peripheral portion of the substrate. Another object is to heat the substrate when the substrate is dried.

  The invention described in claim 1 is a substrate processing apparatus for processing a substrate, wherein a substrate support portion that supports an outer edge portion of a substrate in a horizontal state, and a central axis that faces the substrate support portion together with the substrate in a vertical direction. A substrate rotating mechanism that rotates about the center, a processing liquid supply nozzle that supplies a processing liquid having a temperature higher than that of the substrate to the upper surface of the substrate, and a lower surface of the substrate that faces between the central axis and the outer peripheral edge of the substrate. At least one supply nozzle, and each supply nozzle of the at least one supply nozzle supplies a heating liquid supply nozzle that supplies a heating liquid having a temperature higher than that of the substrate to the lower surface of the substrate, and the lower surface of the substrate. A heating gas supply nozzle that ejects a heating gas having a temperature higher than that of the substrate toward the substrate and shares a partition wall that directly contacts the heating liquid and the heating gas with the heating liquid supply nozzle. Obtain.

  A second aspect of the present invention is the substrate processing apparatus according to the first aspect, wherein each of the supply nozzles is a double tube in which the heated gas supply nozzle surrounds the periphery of the heated liquid supply nozzle.

  The invention described in claim 3 is the substrate processing apparatus according to claim 1 or 2, wherein the at least one supply nozzle is a plurality of supply nozzles, and two or more of the plurality of supply nozzles are supplied. The nozzles are located on the same circumference around the central axis.

  A fourth aspect of the present invention is the substrate processing apparatus according to any one of the first to third aspects, wherein the at least one supply nozzle is a plurality of supply nozzles, and one of the plurality of supply nozzles. The radial distance between the other supply nozzle and the central axis is different from the radial distance between the other supply nozzle and the central axis.

  A fifth aspect of the present invention is the substrate processing apparatus according to any one of the first to fourth aspects, wherein the processing liquid and the heating liquid are the same liquid, and the substrate processing apparatus includes the processing liquid. The apparatus further includes a liquid heating unit that heats the liquid supplied to the supply nozzle and the heating liquid supply nozzle of each of the supply nozzles.

  A sixth aspect of the present invention is the substrate processing apparatus according to the fifth aspect, wherein in each of the supply nozzles, the heating liquid in the heating liquid supply nozzle is the heating gas in the heating gas supply nozzle. By heating through the partition wall, the temperature becomes higher than that of the treatment liquid.

  A seventh aspect of the present invention is the substrate processing apparatus according to any one of the first to fourth aspects, wherein, in each of the supply nozzles, the heating liquid in the heating liquid supply nozzle is the heating gas supply nozzle. It is heated through the partition wall by the heated gas inside.

  Invention of Claim 8 is the substrate processing apparatus in any one of Claim 1 thru | or 7, Comprising: The said substrate support part is cyclic | annular centering on the said central axis, The said substrate processing apparatus is It further comprises a lower surface facing portion having a facing surface facing the lower surface of the substrate inside the substrate supporting portion, and the facing surface is an inclined surface that moves away from the substrate as it moves away from the central axis.

  A ninth aspect of the present invention is the substrate processing apparatus according to any one of the first to eighth aspects, wherein the at least one supply nozzle is inclined with respect to the central axis.

  A tenth aspect of the present invention is the substrate processing apparatus according to any one of the first to ninth aspects, wherein the processing liquid supply nozzle is fixed to face the central portion of the upper surface of the substrate.

  The invention according to claim 11 is the substrate processing apparatus according to any one of claims 1 to 10, wherein a sealed space is formed to form a sealed internal space in which processing of the substrate by the processing liquid is performed. The unit is further provided.

  In the present invention, it is possible to perform the liquid treatment on the lower surface of the substrate while suppressing a temperature drop at the outer peripheral portion of the substrate. Further, the substrate can be heated when the substrate is dried.

It is sectional drawing of the substrate processing apparatus which concerns on one embodiment. It is a cross-sectional view of a supply nozzle. It is a longitudinal cross-sectional view of a supply nozzle. It is a block diagram which shows a gas-liquid supply part and a gas-liquid discharge part. It is a top view of a lower surface opposing part. It is sectional drawing of a lower surface opposing part. It is a figure which shows the flow of a process in a substrate processing apparatus. It is sectional drawing of a substrate processing apparatus. It is sectional drawing of a substrate processing apparatus. It is a figure which shows the temperature distribution of the board | substrate at the time of a chemical | medical solution process. It is a figure which shows the temperature distribution of the board | substrate at the time of a chemical | medical solution process. It is a figure which shows a part of process flow in a substrate processing apparatus. It is a figure which shows the temperature distribution of the board | substrate at the time of a chemical | medical solution process. It is a top view which shows the other example of arrangement | positioning of a supply nozzle. It is a top view which shows the other example of arrangement | positioning of a supply nozzle. It is a cross-sectional view showing another example of a supply nozzle.

  FIG. 1 is a cross-sectional view showing a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 is a single-wafer type apparatus that supplies a processing liquid to a substantially disk-shaped semiconductor substrate 9 (hereinafter simply referred to as “substrate 9”) to process the substrates 9 one by one. In FIG. 1, the provision of parallel oblique lines is omitted in the cross section of a part of the configuration of the substrate processing apparatus 1 (the same applies to other cross sectional views).

  The substrate processing apparatus 1 includes a chamber 12, a top plate 123, a chamber opening / closing mechanism 131, a substrate holding unit 14, a substrate rotating mechanism 15, a liquid receiving unit 16, and a cover 17. The cover 17 covers the upper side and the side of the chamber 12.

  The chamber 12 includes a chamber main body 121 and a chamber lid portion 122. The chamber 12 has a substantially cylindrical shape centering on a central axis J1 facing in the vertical direction. The chamber main body 121 includes a chamber bottom portion 210 and a chamber side wall portion 214. The chamber bottom portion 210 has a substantially disc-shaped central portion 211, a substantially cylindrical inner wall portion 212 extending downward from the outer edge portion of the central portion 211, and a radially outer side from the lower end of the inner wall portion 212. A substantially annular plate-like annular bottom 213, a substantially cylindrical outer wall 215 extending upward from the outer edge of the annular bottom 213, and a substantially annular ring extending radially outward from the upper end of the outer wall 215 And a plate-like base portion 216.

  The chamber side wall portion 214 has an annular shape centering on the central axis J1. The chamber side wall portion 214 projects upward from the inner edge portion of the base portion 216. A member forming the chamber side wall portion 214 also serves as a part of the liquid receiving portion 16 as described later. In the following description, a space surrounded by the chamber side wall part 214, the outer wall part 215, the annular bottom part 213, the inner wall part 212, and the outer edge part of the central part 211 is referred to as a lower annular space 217.

  When the substrate 9 is supported by a substrate support portion 141 (described later) of the substrate holding portion 14, the lower surface 92 of the substrate 9 faces the upper surface of the central portion 211 of the chamber bottom portion 210. In the following description, the central portion 211 of the chamber bottom portion 210 is referred to as a “lower surface facing portion 211”, and the upper surface 211a of the central portion 211 is referred to as a “facing surface 211a”. Details of the lower surface facing portion 211 will be described later.

  The chamber lid 122 has a substantially disc shape perpendicular to the central axis J1 and includes the upper portion of the chamber 12. The chamber lid 122 closes the upper opening of the chamber body 121. FIG. 1 shows a state where the chamber lid 122 is separated from the chamber main body 121. When the chamber lid 122 closes the upper opening of the chamber main body 121, the outer edge of the chamber lid 122 contacts the upper portion of the chamber side wall 214.

  The chamber opening / closing mechanism 131 moves the chamber lid 122, which is a movable part of the chamber 12, relative to the chamber body 121, which is another part of the chamber 12, in the vertical direction. The chamber opening / closing mechanism 131 is a lid raising / lowering mechanism that raises / lowers the chamber lid 122. When the chamber lid 122 moves in the vertical direction by the chamber opening / closing mechanism 131, the top plate 123 also moves in the vertical direction together with the chamber lid 122. The chamber lid 122 is in contact with the chamber main body 121 to close the upper opening, and the chamber lid 122 is pressed toward the chamber main body 121, whereby the chamber space 120 sealed in the chamber 12 (see FIG. 7). ) Is formed. In other words, the chamber space 120 is sealed by closing the upper opening of the chamber body 121 by the chamber lid 122.

  The substrate holding unit 14 is disposed in the chamber space 120 and holds the substrate 9 in a horizontal state. That is, the substrate 9 is held by the substrate holding unit 14 with one main surface 91 (hereinafter referred to as “upper surface 91”) on which a fine pattern is formed facing upwards perpendicular to the central axis J1. The substrate holding portion 14 includes the above-described substrate support portion 141 that supports the outer edge portion of the substrate 9 (that is, the portion in the vicinity of the outer periphery including the outer periphery) from the lower side, and the outer edge of the substrate 9 supported by the substrate support portion 141. And a substrate pressing part 142 for pressing the part from above. The substrate support portion 141 has a substantially annular shape centered on the central axis J1. The substrate support portion 141 includes a substantially annular plate-like support portion base 413 centering on the central axis J1 and a plurality of first contact portions 411 fixed to the upper surface of the support portion base 413. The substrate pressing portion 142 includes a plurality of second contact portions 421 that are fixed to the lower surface of the top plate 123. The circumferential positions of the plurality of second contact portions 421 are actually different from the circumferential positions of the plurality of first contact portions 411.

  The top plate 123 has a substantially disc shape perpendicular to the central axis J1. The top plate 123 is disposed below the chamber lid part 122 and above the substrate support part 141. The top plate 123 has an opening at the center. When the substrate 9 is supported by the substrate support portion 141, the upper surface 91 of the substrate 9 faces the lower surface of the top plate 123 perpendicular to the central axis J1. The diameter of the top plate 123 is larger than the diameter of the substrate 9, and the outer peripheral edge of the top plate 123 is located on the outer side in the radial direction over the entire periphery of the outer peripheral edge of the substrate 9.

  In the state shown in FIG. 1, the top plate 123 is supported so as to be suspended by the chamber lid portion 122. The chamber lid part 122 has a substantially annular plate holding part 222 at the center. The plate holding part 222 includes a substantially cylindrical tube part 223 centered on the central axis J1 and a substantially disk-shaped flange part 224 centered on the central axis J1. The flange part 224 spreads radially inward from the lower end of the cylindrical part 223.

  The top plate 123 includes an annular held portion 237. The held portion 237 includes a substantially cylindrical tube portion 238 centered on the central axis J1 and a substantially disk-shaped flange portion 239 centered on the central axis J1. The cylinder portion 238 extends upward from the upper surface of the top plate 123. The flange portion 239 extends outward from the upper end of the cylindrical portion 238 in the radial direction. The cylindrical portion 238 is located on the radially inner side of the cylindrical portion 223 of the plate holding portion 222. The flange portion 239 is located above the flange portion 224 of the plate holding portion 222 and faces the flange portion 224 in the up-down direction. When the lower surface of the flange portion 239 of the held portion 237 is in contact with the upper surface of the flange portion 224 of the plate holding portion 222, the top plate 123 is attached to the chamber lid portion 122 so as to be suspended from the chamber lid portion 122.

  A plurality of first engagement portions 241 are arranged in the circumferential direction on the lower surface of the outer edge portion of the top plate 123, and a plurality of second engagement portions 242 are arranged in the circumferential direction on the upper surface of the support portion base 413. . Actually, the first engagement portion 241 and the second engagement portion 242 are connected to the plurality of first contact portions 411 of the substrate support portion 141 and the plurality of second contact portions 421 of the substrate pressing portion 142. Arranged at different positions in the direction. It is preferable that three or more sets of these engaging portions are provided, and four sets are provided in the present embodiment. A concave portion that is recessed upward is provided at the lower portion of the first engaging portion 241. The second engagement portion 242 protrudes upward from the support portion base 413.

  The substrate rotation mechanism 15 is a so-called hollow motor. The substrate rotation mechanism 15 includes an annular stator portion 151 centered on the central axis J1 and an annular rotor portion 152. The rotor portion 152 includes a substantially annular permanent magnet. The surface of the permanent magnet is molded with PTFE resin. The rotor portion 152 is disposed in the lower annular space 217 in the chamber 12. A support portion base 413 of the substrate support portion 141 is attached to the upper portion of the rotor portion 152 via a connection member. The support portion base 413 is disposed above the rotor portion 152.

  The stator portion 151 is disposed outside the chamber 12 and around the rotor portion 152, that is, radially outside. In the present embodiment, the stator portion 151 is fixed to the outer wall portion 215 and the base portion 216 of the chamber bottom portion 210 and is positioned below the liquid receiving portion 16. Stator portion 151 includes a plurality of coils arranged in the circumferential direction about central axis J1.

  When current is supplied to the stator portion 151, a rotational force about the central axis J1 is generated between the stator portion 151 and the rotor portion 152. Thereby, the rotor part 152 rotates in a horizontal state around the central axis J1. Due to the magnetic force acting between the stator portion 151 and the rotor portion 152, the rotor portion 152 floats in the chamber 12 without contacting the chamber 12 directly or indirectly, and the substrate 9 is centered on the central axis J1. Are rotated together with the substrate support 141 in a floating state.

  The liquid receiving part 16 includes a cup part 161, a cup part moving mechanism 162, and a cup facing part 163. The cup portion 161 has an annular shape centered on the central axis J <b> 1, and is located on the entire outer circumference in the radial direction of the chamber 12. The cup part moving mechanism 162 moves the cup part 161 in the vertical direction. The cup part moving mechanism 162 is disposed on the radially outer side of the cup part 161. The cup moving mechanism 162 is arranged at a position different from the chamber opening / closing mechanism 131 in the circumferential direction. The cup facing part 163 is located below the cup part 161 and faces the cup part 161 in the vertical direction. The cup facing portion 163 is a part of a member that forms the chamber side wall portion 214. The cup facing portion 163 has an annular liquid receiving recess 165 positioned on the radially outer side of the chamber side wall portion 214.

  The cup part 161 includes a side wall part 611, an upper surface part 612, and a bellows 617. The side wall portion 611 has a substantially cylindrical shape centered on the central axis J1. The upper surface portion 612 has a substantially annular plate shape centered on the central axis J1, and extends from the upper end portion of the side wall portion 611 radially inward and radially outward. The lower part of the side wall part 611 is located in the liquid receiving recessed part 165 of the cup facing part 163.

  The bellows 617 has a substantially cylindrical shape centered on the central axis J1, and can be expanded and contracted in the vertical direction. The bellows 617 is provided over the entire circumference around the side wall 611 outside the side wall 611 in the radial direction. The bellows 617 is formed of a material that does not allow gas or liquid to pass through. The upper end portion of the bellows 617 is connected to the lower surface of the outer edge portion of the upper surface portion 612 over the entire circumference. In other words, the upper end portion of the bellows 617 is indirectly connected to the side wall portion 611 via the upper surface portion 612. The connection portion between the bellows 617 and the upper surface portion 612 is sealed, and passage of gas or liquid is prevented. A lower end portion of the bellows 617 is indirectly connected to the chamber body 121 via the cup facing portion 163. Even at the connecting portion between the lower end portion of the bellows 617 and the cup facing portion 163, the passage of gas or liquid is prevented.

  An upper nozzle 181 is attached to the center of the chamber lid 122. The upper nozzle 181 is fixed to the chamber lid 122 so as to face the central portion of the upper surface 91 of the substrate 9. The upper nozzle 181 can be inserted into the central opening of the top plate 123. The upper nozzle 181 is a processing liquid supply nozzle that has a liquid discharge port in the center and supplies the processing liquid to the upper surface 91 of the substrate 9. The upper nozzle 181 also has an ejection port for ejecting gas around the liquid ejection port. A lower nozzle 182 is attached to the center of the lower surface facing portion 211 of the chamber bottom portion 210. The lower nozzle 182 has a liquid discharge port at the center and faces the center of the lower surface 92 of the substrate 9. The lower surface facing portion 211 is further provided with a plurality of supply nozzles 180 facing the lower surface 92 of the substrate 9.

  FIG. 2 is a cross-sectional view perpendicular to the central axis J2 of the supply nozzle 180. FIG. FIG. 3 is a longitudinal sectional view of the supply nozzle 180 including the central axis J2. The structure of the other supply nozzles 180 is the same as the structure of the supply nozzles 180 shown in FIGS. As shown in FIGS. 2 and 3, the supply nozzle 180 includes a heating gas supply nozzle 180a and a heating liquid supply nozzle 180b. Each supply nozzle 180 is a double tube in which the heated gas supply nozzle 180a surrounds the periphery of the heated liquid supply nozzle 180b over the entire circumference.

  Each supply nozzle 180 includes a substantially cylindrical inner peripheral wall 801 and a substantially cylindrical outer peripheral wall 802 that surrounds the entire periphery of the inner peripheral wall 801. The cross sections of the inner peripheral wall 801 and the outer peripheral wall 802 are substantially concentric as shown in FIG. The discharge port 1805 of the heating liquid supply nozzle 180b that is the tip of the inner peripheral wall 801 and the portion near the discharge port 1805 of the inner peripheral wall 801 protrude from the jet port 1802 of the heated gas supply nozzle 180a that is the tip of the outer peripheral wall 802. To do. Preferably, the inner peripheral wall 801 is formed of a material having a relatively high thermal conductivity and is thinned so as to increase the thermal conductivity. The outer peripheral wall 802 is formed of a material having a relatively low thermal conductivity, and is thickened so that the thermal conductivity is low. The arrangement of the supply nozzle 180 will be described later.

  FIG. 4 is a block diagram showing the gas-liquid supply unit 18 and the gas-liquid discharge unit 19 included in the substrate processing apparatus 1. In addition to the supply nozzle 180, the upper nozzle 181 and the lower nozzle 182, the gas-liquid supply unit 18 includes a chemical solution supply unit 183, a pure water supply unit 184, an IPA supply unit 185, and an inert gas supply unit 186. The heating gas supply unit 187 and the liquid heating unit 188 are provided.

  The chemical liquid supply unit 183 is connected to the liquid heating unit 188, and the liquid heating unit 188 is connected to the upper nozzle 181 and the heating liquid supply nozzle 180b of the plurality of supply nozzles 180 via valves. The chemical solution supplied from the chemical solution supply unit 183 to the liquid heating unit 188 is heated by the liquid heating unit 188. The heated chemical liquid is supplied to the upper nozzle 181 and the plurality of heated liquid supply nozzles 180b. The control unit 10 starts and stops the supply of the heated chemical liquid to the upper nozzle 181 and starts and stops the supply of the heated chemical liquid (hereinafter also referred to as “heating liquid”) to the heated liquid supply nozzle 180b. It can be controlled individually.

  The pure water supply unit 184 and the IPA supply unit 185 are connected to the upper nozzle 181 through valves, respectively. The lower nozzle 182 is connected to the pure water supply unit 184 via a valve. The upper nozzle 181 is also connected to an inert gas supply unit 186 through a valve. The upper nozzle 181 is a part of a gas supply unit that supplies gas into the chamber 12. The plurality of heated gas supply nozzles 180a are connected to the heated gas supply unit 187 via valves.

  The first discharge path 191 connected to the liquid receiving recess 165 of the liquid receiving unit 16 is connected to the gas-liquid separation unit 193. The gas-liquid separation unit 193 is connected to the outer exhaust unit 194, the chemical solution recovery unit 195, and the drainage unit 196 through valves. The second discharge path 192 connected to the chamber bottom 210 of the chamber 12 is connected to the gas-liquid separator 197. The gas-liquid separation unit 197 is connected to the inner exhaust unit 198 and the drainage unit 199 via valves. Each configuration of the gas-liquid supply unit 18 and the gas-liquid discharge unit 19 is controlled by the control unit 10. The chamber opening / closing mechanism 131, the substrate rotating mechanism 15, and the cup moving mechanism 162 (see FIG. 1) are also controlled by the control unit 10.

  The chemical liquid supplied to the substrate 9 from the chemical liquid supply unit 183 via the upper nozzle 181 and the plurality of heating liquid supply nozzles 180b is a processing liquid that processes the substrate using a chemical reaction. Etching solution such as tetramethylammonium aqueous solution. The pure water supply unit 184 supplies pure water (DIW: deionized water) to the substrate 9 via the upper nozzle 181 or the lower nozzle 182. The IPA supply unit 185 supplies isopropyl alcohol (IPA) onto the substrate 9 through the upper nozzle 181. The substrate processing apparatus 1 may be provided with a processing liquid supply unit that supplies processing liquids other than the above-described processing liquids (the above chemical liquid, pure water, and IPA).

The inert gas supply unit 186 supplies an inert gas into the chamber 12 through the upper nozzle 181. The heated gas supply unit 187 supplies heated gas (for example, high-temperature inert gas) to the lower surface 92 of the substrate 9 through the plurality of heated gas supply nozzles 180a. In the present embodiment, the gas used in the inert gas supply unit 186 and the heating gas supply unit 187 is nitrogen (N ₂ ) gas, but may be other than nitrogen gas. In addition, when using the inert gas heated in the heated gas supply part 187, the explosion-proof measures in the substrate processing apparatus 1 can be simplified or unnecessary.

  In each supply nozzle 180 shown in FIGS. 2 and 3, heated chemical liquid (hereinafter referred to as “heating liquid”) supplied from the chemical liquid supply unit 183 and the liquid heating unit 188 to the heating liquid supply nozzle 180 b is an inner peripheral wall. Contact 801 directly. The heated gas supplied from the heated gas supply unit 187 to the heated gas supply nozzle 180a (hereinafter referred to as “heated gas”) directly contacts the inner peripheral wall 801 and the outer peripheral wall 802. The inner peripheral wall 801 of the supply nozzle 180 is a partition wall that directly contacts the heating liquid and the heating gas and prevents mixing of the heating liquid and the heating gas in the supply nozzle 180, and is heated with the heating gas supply nozzle 180 a. It is shared with the liquid supply nozzle 180b.

  FIG. 5 is a plan view showing the arrangement of the plurality of supply nozzles 180 in the lower surface facing portion 211 of the chamber bottom portion 210. In FIG. 5, the entire supply nozzle 180 is not shown, and the attachment position of each supply nozzle 180 in the lower surface facing portion 211 is indicated by a solid circle with a reference numeral 1801 (the same applies to FIGS. 14 and 15). As shown in FIG. 5, six supply nozzles 180 are provided in the lower surface facing portion 211. The six supply nozzles 180 are arranged at equiangular intervals (60 ° intervals) on the same circumference around the central axis J1. For example, in the substrate processing apparatus 1 used for processing the substrate 9 having a radius of about 150 mm (millimeters), the radial distance between the center of the discharge port 1805 of each supply nozzle 180 and the central axis J1 is about 90 mm. is there.

  FIG. 6 is an enlarged sectional view showing the vicinity of the lower surface facing portion 211. As shown in FIG. 6, when the substrate 9 is supported by the substrate support portion 141, the facing surface 211 a of the lower surface facing portion 211 faces the lower surface 92 of the substrate 9 on the radially inner side of the substrate supporting portion 141. The facing surface 211a is an inclined surface positioned downward (that is, away from the substrate 9) as the distance from the central axis J1 increases, and spreads over substantially the entire lower surface 92 of the substrate 9. The distance between the opposing surface 211a and the lower surface 92 of the substrate 9 is minimum in the vicinity of the lower nozzle 182 and is, for example, 5 mm. The distance is maximum at the outer edge portion of the substrate 9 and is, for example, 30 mm.

  Each supply nozzle 180 protrudes from the opposing surface 211a. The heating liquid supply nozzle 180b of each supply nozzle 180 is connected to a liquid heating unit 188 (see FIG. 4) via a heating liquid pipe 806 and a heating liquid manifold 807 formed inside the lower surface facing portion 211. The heating liquid manifold 807 has a substantially annular shape centered on the central axis J1. The plurality of heating liquid supply nozzles 180b and the heating liquid manifold 807 are connected by the plurality of heating liquid pipes 806, respectively.

  The heated gas supply nozzle 180 a of each supply nozzle 180 is connected to the heated gas supply unit 187 via a heated gas pipe 808 and a heated gas manifold 809 formed in the lower surface facing portion 211. The heated gas manifold 809 has a substantially annular shape centered on the central axis J <b> 1 and covers the outer surface of the heated liquid manifold 807. A plurality of heating gas supply nozzles 180a and a heating gas manifold 809 are connected by a plurality of heating gas pipes 808, respectively. Each heated gas pipe 808 surrounds the periphery of the heated liquid pipe 806 over the entire circumference. A heating liquid pipe 806 and a heating gas pipe 808 connected to one supply nozzle 180 are collectively referred to as a supply pipe 804, and a heating liquid manifold 807 and a heating gas manifold 809 are collectively referred to as a manifold 805. The pipe 804 is a double pipe that connects the manifold 805 and the plurality of supply nozzles 180 respectively.

  The outlet 1802 of each heating gas supply nozzle 180a and the discharge port 1805 of each heating liquid supply nozzle 180b are close to the lower surface 92 of the substrate 9 above the opposing surface 211a. Each supply nozzle 180 is fixed to the lower surface facing portion 211 so that the central axis J2 thereof is approximately along the normal line of the facing surface 211a at the mounting position 1801. That is, each supply nozzle 180 is inclined with respect to the central axis J1. Therefore, each heated gas supply nozzle 180a is inclined with respect to the central axis J1 so that the jet outlet 1802 is located slightly outside the mounting position 1801 in the radial direction. Each heating liquid supply nozzle 180b is also inclined with respect to the central axis J1 so that the discharge port 1805 is located slightly outside the mounting position 1801 in the radial direction.

  FIG. 7 is a diagram illustrating a processing flow of the substrate 9 in the substrate processing apparatus 1. In the substrate processing apparatus 1, as shown in FIG. 1, in a state where the chamber lid part 122 is spaced apart from the chamber body 121 and located above, and the cup part 161 is separated from the chamber lid part 122 and located below. The substrate 9 is carried into the chamber 12 by an external transport mechanism and supported from below by the substrate support portion 141 (step S11). Hereinafter, the state of the chamber 12 and the cup part 161 shown in FIG. 1 is referred to as an “open state”. The opening between the chamber lid part 122 and the chamber side wall part 214 has an annular shape centering on the central axis J1, and is hereinafter referred to as “annular opening 81”. In the substrate processing apparatus 1, the chamber lid 122 is separated from the chamber main body 121, whereby an annular opening 81 is formed around the substrate 9 (that is, radially outside). In step S <b> 11, the substrate 9 is carried in via the annular opening 81.

  When the substrate 9 is carried in, the cup portion 161 rises from the position shown in FIG. 1 to the position shown in FIG. 8, and is located over the entire circumference on the radially outer side of the annular opening 81. In the following description, the state of the chamber 12 and the cup part 161 shown in FIG. 8 is referred to as a “first sealed state”. Further, the position of the cup portion 161 shown in FIG. 8 is referred to as “liquid receiving position”, and the position of the cup portion 161 shown in FIG. 1 is referred to as “retracted position”. The cup part moving mechanism 162 moves the cup part 161 in the vertical direction between a liquid receiving position radially outside the annular opening 81 and a retracted position below the liquid receiving position.

  In the cup portion 161 located at the liquid receiving position, the side wall portion 611 faces the annular opening 81 in the radial direction. Further, the upper surface of the inner edge portion of the upper surface portion 612 is in contact with the lip seal 232 at the lower end of the outer edge portion of the chamber lid portion 122 over the entire circumference. Between the chamber cover part 122 and the upper surface part 612 of the cup part 161, the seal part which prevents passage of gas and a liquid is formed. Thus, a sealed internal space (hereinafter referred to as “enlarged sealed space 100”) surrounded by the chamber main body 121, the chamber lid portion 122, the cup portion 161, and the cup facing portion 163 is formed.

  In the enlarged sealed space 100, the chamber space 120 between the chamber lid portion 122 and the chamber body 121 and the side space 160 surrounded by the cup portion 161 and the cup facing portion 163 communicate with each other via the annular opening 81. It is one space formed by this. The chamber lid part 122, the chamber body 121, the cup part 161, and the cup facing part 163 are sealed space forming parts that form the expanded sealed space 100.

  In the first sealed state, the plurality of second contact portions 421 of the substrate pressing portion 142 are in contact with the outer edge portion of the substrate 9. On the lower surface of the top plate 123 and the support portion base 413 of the substrate support portion 141, a plurality of pairs of magnets (not shown) that are opposed in the vertical direction are provided. Hereinafter, each pair of magnets is also referred to as a “magnet pair”. In the substrate processing apparatus 1, a plurality of magnet pairs are arranged at equiangular intervals at positions different from the first contact portion 411, the second contact portion 421, the first engagement portion 241, and the second engagement portion 242 in the circumferential direction. Arranged. In a state where the substrate pressing portion 142 is in contact with the substrate 9, a downward force is applied to the top plate 123 due to the magnetic force (attractive force) acting between the magnet pair. Thereby, the substrate pressing portion 142 presses the substrate 9 to the substrate support portion 141.

  In the substrate processing apparatus 1, the substrate pressing portion 142 presses the substrate 9 against the substrate support portion 141 by the weight of the top plate 123 and the magnetic force of the magnet pair, thereby causing the substrate pressing portion 142 and the substrate support portion to be pressed. 141 and can be firmly held by being sandwiched from above and below.

  In the first sealed state, the flange portion 239 of the held portion 237 is separated above the flange portion 224 of the plate holding portion 222, and the plate holding portion 222 and the held portion 237 are not in contact with each other. In other words, the holding of the top plate 123 by the plate holding part 222 is released. For this reason, the top plate 123 is rotated by the substrate rotation mechanism 15 together with the substrate holding unit 14 and the substrate 9 held by the substrate holding unit 14 independently of the chamber lid 122.

  Further, in the first sealed state, the second engagement portion 242 is fitted in the recess at the lower portion of the first engagement portion 241. Thereby, the top plate 123 engages with the support portion base 413 of the substrate support portion 141 in the circumferential direction around the central axis J1. In other words, the first engagement portion 241 and the second engagement portion 242 restrict the relative position in the rotation direction of the top plate 123 with respect to the substrate support portion 141 (that is, fix the relative position in the circumferential direction). It is a member. When the chamber lid part 122 is lowered, the rotation position of the support part base 413 is controlled by the substrate rotation mechanism 15 so that the first engagement part 241 and the second engagement part 242 are fitted.

  Subsequently, the substrate rotation mechanism 15 starts rotating the substrate 9 at a constant rotation speed (which is a relatively low rotation speed, hereinafter referred to as “steady rotation speed”). Furthermore, supply of the inert gas (here, nitrogen gas) from the inert gas supply unit 186 (see FIG. 4) to the expanded sealed space 100 is started, and the gas in the expanded sealed space 100 by the outer exhaust unit 194 is started. Starts to be discharged. As a result, after a predetermined time has elapsed, the enlarged sealed space 100 becomes an inert gas filled state filled with an inert gas (that is, a low oxygen atmosphere with a low oxygen concentration). The supply of the inert gas to the expanded sealed space 100 and the discharge of the gas in the expanded sealed space 100 may be performed from the open state shown in FIG.

  Next, supply of the heating liquid, which is a chemical liquid heated to a temperature higher than that of the substrate 9, from the heating liquid supply nozzle 180 b of the plurality of supply nozzles 180 toward the lower surface 92 of the rotating substrate 9 by the control of the control unit 10. Is started. The heating liquid from each heating liquid supply nozzle 180b is continuously supplied to the lower surface 92 of the substrate 9 between the central axis J1 and the outer peripheral edge (edge) of the substrate 9. The heating liquid supplied to the lower surface 92 spreads to the outer peripheral portion of the substrate 9 by the rotation of the substrate 9. Thereby, the chemical treatment for the lower surface 92 of the substrate 9 is started and the heating of the substrate 9 is started. The temperature of the heating liquid is appropriately determined according to the type of chemical liquid, the treatment for the substrate 9, and the like, and is, for example, about 50 to 80 ° C. The total flow rate of the heating liquid supplied from the plurality of heating liquid supply nozzles 180b to the lower surface 92 of the substrate 9 is, for example, about 2 to 3 liters per minute.

  When the substrate 9 is heated to a predetermined temperature, supply of a chemical solution heated to a temperature higher than that of the substrate 9 from the upper nozzle 181 toward the center of the upper surface 91 of the rotating substrate 9 is controlled by the control unit 10. Is started. The discharge of the chemical liquid onto the upper surface 91 of the substrate 9 is performed only on the central portion of the substrate 9 and is not performed on portions other than the central portion. The chemical solution from the upper nozzle 181 is continuously supplied to the upper surface 91 of the rotating substrate 9. The chemical solution on the upper surface 91 spreads to the outer peripheral portion of the substrate 9 by the rotation of the substrate 9, and the entire upper surface 91 is covered with the chemical solution.

  The supply of the heating liquid from the heating liquid supply nozzle 180b is continued during the supply of the chemical liquid from the upper nozzle 181. Thereby, in the enlarged sealed space 100, the substrate 9 is heated to approximately a desired temperature, and the etching process for the upper surface 91 of the substrate 9 by the chemical supplied from the upper nozzle 181 and the heating liquid supply nozzle 180b are supplied. An etching process is performed on the lower surface 92 of the substrate 9 by the heating liquid (step S12). The flow rate of the chemical solution supplied from the upper nozzle 181 to the upper surface 91 of the substrate 9 is, for example, about 0.5 to 1 liter per minute. Since the lower surface of the top plate 123 is close to the upper surface 91 of the substrate 9, the etching of the substrate 9 is performed in a very narrow space between the lower surface of the top plate 123 and the upper surface 91 of the substrate 9.

  In the enlarged sealed space 100, the chemical liquid scattered from the upper surface 91 of the rotating substrate 9 is received by the cup portion 161 via the annular opening 81 and guided to the liquid receiving recess 165. The chemical liquid guided to the liquid receiving recess 165 flows into the gas-liquid separator 193 via the first discharge path 191 shown in FIG. In the chemical solution recovery unit 195, the chemical solution is recovered from the gas-liquid separation unit 193 and is reused after impurities and the like are removed from the chemical solution through a filter or the like.

  When a predetermined time (for example, 60 to 120 seconds) elapses from the supply start of the chemical liquid from the upper nozzle 181, supply of the chemical liquid from the upper nozzle 181 and supply of the heating liquid from the heating liquid supply nozzle 180b are stopped. In the heating liquid supply nozzle 180b, the heating liquid is drawn back from the discharge port 1805 to the inside of the heating liquid supply nozzle 180b by suck back. Thereby, it is possible to suppress or prevent the heating liquid from dripping from the discharge port 1805 and flowing into the heating gas supply nozzle 180a. Then, the substrate rotation mechanism 15 makes the rotation speed of the substrate 9 higher than the steady rotation speed for a predetermined time (for example, 1 to 3 seconds), and the chemical solution is removed from the substrate 9.

  Subsequently, the chamber lid portion 122 and the cup portion 161 move downward in synchronization. Then, as shown in FIG. 9, the lip seal 231 at the lower end of the outer edge portion of the chamber lid portion 122 is in contact with the upper portion of the chamber side wall portion 214, whereby the annular opening 81 is closed, and the chamber space 120 becomes the side space 160. And sealed in an isolated state. The cup part 161 is located at the retracted position as in FIG. Hereinafter, the state of the chamber 12 and the cup part 161 shown in FIG. 9 is referred to as a “second sealed state”. In the second sealed state, the substrate 9 directly faces the inner wall of the chamber 12, and there is no other liquid receiving part therebetween.

  Even in the second sealed state, similarly to the first sealed state, the substrate pressing portion 142 presses the substrate 9 against the substrate supporting portion 141, so that the substrate 9 is moved from above and below by the substrate pressing portion 142 and the substrate supporting portion 141. It is sandwiched and held firmly. Further, the holding of the top plate 123 by the plate holding unit 222 is released, and the top plate 123 rotates together with the substrate holding unit 14 and the substrate 9 independently of the chamber lid unit 122.

  When the chamber space 120 is sealed, the gas discharge by the outer exhaust part 194 (see FIG. 4) is stopped and the gas discharge in the chamber space 120 by the inner exhaust part 198 is started. Then, the supply of pure water, which is a rinse liquid or a cleaning liquid, to the substrate 9 is started by the pure water supply unit 184 (step S13).

  Pure water from the pure water supply unit 184 is discharged from the upper nozzle 181 and the lower nozzle 182 and is continuously supplied to the central portions of the upper surface 91 and the lower surface 92 of the substrate 9. The pure water spreads to the outer peripheral portions of the upper surface 91 and the lower surface 92 by the rotation of the substrate 9 and scatters from the outer peripheral edge of the substrate 9 to the outside. Pure water splashing from the substrate 9 is received by the inner wall of the chamber 12 (that is, the inner walls of the chamber lid portion 122 and the chamber side wall portion 214), and the second discharge path 192, the gas-liquid separation portion 197, and the discharge portion shown in FIG. It is discarded through the liquid part 199 (the same applies to the drying process of the substrate 9 described later). Thereby, the cleaning of the chamber 12 is substantially performed together with the rinsing process and the cleaning process of the upper surface 91 and the lower surface 92 of the substrate 9.

  When a predetermined time has elapsed from the start of the supply of pure water, the supply of pure water from the pure water supply unit 184 is stopped. Then, the inert gas (that is, the heated gas) that is heated to a temperature higher than that of the substrate 9 is ejected from the heated gas supply nozzles 180a of the plurality of supply nozzles 180 toward the lower surface 92 of the substrate 9 under the control of the control unit 10. Is started. The heated gas from each heated gas supply nozzle 180a is continuously ejected toward the lower surface 92 of the substrate 9 between the central axis J1 and the outer peripheral edge (edge) of the substrate 9. The heated gas sprayed from the heated gas supply nozzle 180 a onto the lower surface 92 of the substrate 9 spreads in the space below the substrate 9. Thereby, the substrate 9 is heated. The temperature of the heated gas is, for example, about 160 to 200 ° C. The total flow rate of the heating gas supplied from the plurality of heating gas supply nozzles 180a is, for example, about 150 to 200 liters per minute. In the supply nozzle 180, even when the heating liquid adheres and remains in the vicinity of the discharge port 1805 of the heating liquid supply nozzle 180 b, the heating liquid is blown off by the ejection of the heating gas from the heating gas supply nozzle 180 a. To be removed.

  Subsequently, IPA is supplied from the upper nozzle 181 onto the upper surface 91 of the substrate 9, and pure water is replaced with IPA on the upper surface 91 (step S14). When a predetermined time has elapsed from the start of IPA supply, the supply of IPA from the IPA supply unit 185 is stopped. Thereafter, the rotation speed of the substrate 9 is made sufficiently higher than the steady rotation speed in a state where the ejection of the heating gas from the heating gas supply nozzle 180a is continued. As a result, the IPA is removed from the substrate 9, and the substrate 9 is dried (step S15). When a predetermined time has elapsed from the start of drying of the substrate 9, the rotation of the substrate 9 is stopped. The drying process of the substrate 9 may be performed in a reduced-pressure atmosphere lower than the atmospheric pressure by reducing the chamber space 120 by the inner exhaust unit 198.

  Thereafter, the chamber lid 122 and the top plate 123 are raised, and the chamber 12 is opened as shown in FIG. In step S15, the top plate 123 rotates together with the substrate support 141, so that almost no liquid remains on the lower surface of the top plate 123, and the liquid falls from the top plate 123 onto the substrate 9 when the chamber lid 122 is raised. There is no. The substrate 9 is unloaded from the chamber 12 by an external transfer mechanism (step S16).

  As described above, in the substrate processing apparatus 1, the upper nozzle 181 that supplies a chemical solution having a temperature higher than that of the substrate 9 to the upper surface 91 of the substrate 9 and the central axis J <b> 1 and the outer peripheral edge of the substrate 9 A heating liquid supply nozzle 180 b for supplying a heating liquid having a temperature higher than that of the substrate 9 is provided on the lower surface 92. Thereby, it can suppress or prevent that the temperature of the board | substrate 9 and the temperature of the chemical | medical solution supplied to the upper surface 91 of the board | substrate 9 fall as it goes to the outer peripheral part from the center part of the board | substrate 9. As a result, the temperature uniformity of the substrate 9 and the chemical solution on the substrate 9 can be improved, and the in-plane uniformity of the etching process on the upper surface 91 of the substrate 9 can be improved. Further, the etching process of the lower surface of the substrate 9 by the heating liquid can be performed in parallel with the etching process of the upper surface 91.

  Thus, in the substrate processing apparatus 1, the temperature uniformity of the chemical | medical solution on the board | substrate 9 and the board | substrate 9 can be improved. For this reason, the structure of the substrate processing apparatus 1 is such that the temperature of the chemical solution supplied to the upper surface 91 of the substrate 9 is relatively low as it moves from the central portion to the outer peripheral portion of the substrate 9. It is particularly suitable for a substrate processing apparatus in which an upper nozzle 181 for discharging a chemical solution on the upper surface 91 is fixed to face the central portion of the upper surface 91. In the substrate processing apparatus in which the upper nozzle 181 is fixed so as to face the central portion of the upper surface 91 of the substrate 9, the movement distance on the substrate 9 until the chemical solution supplied on the upper surface 91 scatters from the outer edge is long. The chemical solution supplied on 91 can be efficiently used for the etching process.

  In the substrate processing apparatus 1, a heating gas supply nozzle 180 a that supplies a heating gas higher in temperature than the substrate 9 toward the lower surface 92 of the substrate 9 is provided between the central axis J <b> 1 and the outer peripheral edge of the substrate 9. Thereby, when the substrate 9 is dried, the substrate 9 can be heated without supplying a liquid to the substrate 9, and the volatility of the IPA on the substrate 9 can be increased. As a result, the substrate 9 can be dried quickly, and damage to the fine pattern on the upper surface 91 of the substrate 9 when the substrate 9 is dried can be suppressed or prevented.

  In the substrate processing apparatus 1, the heating gas supply nozzle 180 a and the heating liquid supply nozzle 180 b are one supply nozzle 180. Thereby, the structure utilized for heating the lower surface 92 of the substrate 9 at the time of chemical treatment of the substrate 9 and drying can be simplified and miniaturized. As a result, the space between the substrate 9 and the chamber bottom 210 (that is, the space below the substrate 9) can be used effectively.

  In the substrate processing apparatus 1, two or more heating liquid supply nozzles 180b among the plurality of heating liquid supply nozzles 180b are located on the same circumference with the central axis J1 as the center. As a result, after each portion of the substrate 9 above the circle passes above the heating liquid supply nozzle 180b and is supplied with the heating liquid, it moves to the next position above the heating liquid supply nozzle 180b. Can be shortened. Thereby, the temperature fall (namely, temperature fall during rotation) at the time of each site | part of the board | substrate 9 moving between the heating liquid supply nozzles 180b can be suppressed. As a result, when the chemical treatment of the substrate 9 is performed, the temperature uniformity of the chemical solution on the substrate 9 and the substrate 9 in the circumferential direction can be further improved, and the in-plane uniformity of the etching treatment on the substrate 9 can be further improved. Can be improved.

  As described above, the chemical liquid supplied from the upper nozzle 181 to the upper surface 91 of the substrate 9 and the heating liquid supplied from the heating liquid supply nozzle 180 b to the lower surface 92 of the substrate 9 are supplied from one chemical liquid supply unit 183. The same liquid. The liquid (chemical liquid) is heated by one liquid heating unit 188 before being supplied to the upper nozzle 181 and the heating liquid supply nozzle 180b. Thereby, the structure of the substrate processing apparatus 1 can be simplified, and the substrate processing apparatus 1 can be downsized.

  In the substrate processing apparatus 1, two or more heating gas supply nozzles 180a among the plurality of heating gas supply nozzles 180a are located on the same circumference with the central axis J1 as the center. Thereby, after each part of the substrate 9 above the circle passes above the heated gas supply nozzle 180a and is supplied with the heated gas, it moves to the next position above the heated gas supply nozzle 180a. Can be shortened. Thereby, the temperature fall (namely, temperature fall during rotation) at the time of each site | part of the board | substrate 9 moving between the heating gas supply nozzles 180a can be suppressed. As a result, when the drying process of the substrate 9 is performed, the temperature uniformity of the substrate 9 in the circumferential direction can be further improved, and the substrate 9 can be dried more rapidly. In addition, it is possible to further suppress or prevent damage to the fine pattern on the upper surface 91 of the substrate 9 when the substrate 9 is dried.

  In the substrate processing apparatus 1, the supply nozzle 180 protrudes from the facing surface 211 a of the lower surface facing portion 211. As a result, a processing liquid such as pure water supplied from the lower nozzle 182 to the lower surface 92 of the substrate 9 flows into the heating gas supply nozzle 180a from the ejection port 1802, and the heating liquid supply nozzle 180b from the discharge port 1805. It can suppress flowing in. In addition, since the supply nozzle 180 is inclined with respect to the central axis J1, it is possible to further suppress the processing liquid such as pure water from flowing into the heating gas supply nozzle 180a and the heating liquid supply nozzle 180b.

  As described above, the facing surface 211a of the lower surface facing portion 211 is an inclined surface that moves away from the substrate 9 as it moves away from the central axis J1. Thereby, the processing liquid such as the chemical liquid or pure water supplied to the lower surface 92 of the substrate 9 can be easily guided to the radially outer side of the facing surface 211a. As a result, the treatment liquid can be prevented from accumulating on the facing surface 211a.

  FIG. 10 is a diagram showing the temperature distribution of the substrate 9 during chemical processing (step S12) in the substrate processing apparatus 1 performed while supplying the heating liquid to the lower surface 92 of the substrate 9 in the substrate processing apparatus 1. FIG. 10 shows the temperature distribution of the substrate 9 having a radius of about 150 mm. Further, the horizontal axis in FIG. 10 indicates the radial distance from the central axis J1 of each measurement position, and the vertical axis indicates the temperature of the substrate 9 at each measurement position. The same applies to FIGS. 11 and 13. In FIG. 10, the solid line denoted by reference numeral 95 indicates the temperature of the substrate 9 during chemical processing in the substrate processing apparatus 1, and the black circle mark indicates the temperature of the substrate during chemical processing in the substrate processing apparatus of the first comparative example. Show. In the substrate processing apparatus of the first comparative example, no heating liquid supply nozzle is provided, and a chemical liquid having a temperature higher than that of the substrate is supplied from the upper nozzle to the upper surface of the substrate. There is no supply. The temperature of the substrate 9 indicated by the solid line 95 is estimated by simulation from experimental results in a substrate processing apparatus in which the heating gas supply nozzle 180a and the heating liquid supply nozzle 180b are separately arranged on the lower surface facing portion 211 (FIG. 11). The same applies to the solid lines 96 to 98 in FIG. 13). As shown in FIG. 10, in the substrate processing apparatus 1, the temperature of the substrate 9 is suppressed from decreasing as it goes from the central part of the substrate 9 to the outer peripheral part as compared with the substrate processing apparatus of the first comparative example.

  In the substrate processing apparatus 1, when the chemical treatment of the lower surface 92 of the substrate 9 is not performed during the chemical treatment on the upper surface 91 of the substrate 9, the chemical solution from the upper nozzle 181 is used instead of the supply of the heating fluid from the heating fluid supply nozzle 180 b. In parallel with this supply, the heating gas may be supplied to the lower surface 92 of the substrate 9 from the heating gas supply nozzle 180a. FIG. 11 is a diagram showing the temperature distribution of the substrate 9 during the chemical processing (step S12) when heating gas is supplied to the lower surface 92 of the substrate 9 instead of the heating liquid. In FIG. 10, a solid line denoted by reference numeral 96 indicates the temperature of the substrate 9 during the chemical processing in the substrate processing apparatus 1, and the black circle mark indicates the substrate during the chemical processing in the substrate processing apparatus of the first comparative example. Indicates temperature. As shown in FIG. 11, even when heated gas is supplied to the lower surface 92 of the substrate 9 during the chemical processing, the substrate moves from the central portion toward the outer peripheral portion as compared with the substrate processing apparatus of the first comparative example. It is suppressed that the temperature of 9 falls.

  By the way, assuming a substrate processing apparatus that processes a substrate in an open processing space (hereinafter, referred to as “substrate processing apparatus of a second comparative example”), the substrate processing apparatus of the second comparative example uses a chemical solution. In order to prevent the gas containing the component from diffusing to the outside, the gas in the processing space is discharged at a large flow rate when the substrate is processed with the chemical solution. Further, in order to prevent adhesion of particles to the substrate, a downflow is also generated. Accordingly, an air flow is generated around the substrate from the upper side to the lower side, and the temperature of the substrate is likely to decrease due to the air flow. The temperature drop of the substrate becomes remarkable at the outer edge portion of the substrate, and the uniformity of the temperature distribution of the substrate is lowered. As a result, the uniformity of the processing of the substrate with the chemical solution is reduced. Although it is conceivable to suppress a decrease in uniformity of the temperature distribution of the substrate by supplying the chemical solution heated to a constant temperature to the substrate at a large flow rate, the consumption of the chemical solution increases.

  On the other hand, in the substrate processing apparatus 1, the chamber 12, the cup part 161, and the cup facing part 163, which are sealed space forming parts, are enlarged as a sealed space that is smaller than the processing space in the substrate processing apparatus of the second comparative example. A sealed space 100 is formed. Thereby, the diffusion of heat from the substrate 9 can be suppressed.

  In the substrate processing apparatus 1 in which the enlarged sealed space 100 is formed, the gas containing the chemical component does not diffuse to the outside, and the necessity for downflow for preventing the adhesion of particles to the substrate is low. The flow rate of the gas flowing into the space 100 and the gas flowing out from the enlarged sealed space 100 can be set low. Therefore, the temperature drop of the substrate 9 can be further reduced. As a result, the uniformity of the temperature distribution of the substrate can be improved while the flow rate of the heating liquid from the heating liquid supply nozzle 180b is set to be relatively low. In addition, since it is not necessary to supply the chemical solution heated to a constant temperature to the upper surface 91 of the substrate 9 at a large flow rate (that is, the consumption amount of the chemical solution can be reduced), the COO ( cost of ownership) can also be reduced.

  In the substrate processing apparatus 1, step S <b> 121 shown in FIG. 12 may be performed instead of step S <b> 12 during the above-described chemical liquid processing. In step S121, the chemical liquid heated from the upper nozzle 181 is supplied to the upper surface 91 of the rotating substrate 9 by the control of the control unit 10, and the lower surface of the substrate 9 is supplied in parallel with the supply of the chemical liquid. The heating liquid is supplied to 92 from the heating liquid supply nozzle 180b. In step S121, the heating gas is further supplied from the heating gas supply nozzle 180a to the space below the substrate 9 in parallel with the supply of the chemical solution from the upper nozzle 181 and the supply of the heating liquid from the heating liquid supply nozzle 180b. Supplied.

  The supply of the heating gas from the heating gas supply nozzle 180a to the space below the substrate 9 is performed more slowly than the ejection of the heating gas from the heating gas supply nozzle 180a in the drying process (step S15) of the substrate 9 described above. . Therefore, the heating liquid supplied from the heating liquid supply nozzle 180b to the lower surface 92 of the substrate 9 is repelled from the lower surface 92 by the heating gas from the heating gas supply nozzle 180a, or the flow of the heating liquid that moves on the lower surface 92. Is prevented from being disturbed by the heated gas from the heated gas supply nozzle 180a.

  In step S121, in the high-temperature heating gas atmosphere supplied to the space below the substrate 9, the heating liquid from the heating gas supply nozzle 180a is supplied to the lower surface 92 of the substrate 9, and the upper surface of the lower surface 92 is directed toward the outer peripheral portion. Moving. For this reason, it can suppress that the temperature of a heating liquid falls at the time of supply on the board | substrate 9, and the movement on the board | substrate 9. FIG.

  As described above, each supply nozzle 180 is provided with an inner peripheral wall 801 that is a partition wall shared by the heating gas supply nozzle 180a and the heating liquid supply nozzle 180b, as shown in FIGS. The temperature (about 160 to 200 ° C.) is higher than the temperature of the heating liquid (about 50 to 80 ° C.). For this reason, the heating liquid flowing in the heating liquid supply nozzle 180b is heated via the inner peripheral wall 801 by the heating gas flowing in the heating gas supply nozzle 180a. Thereby, it is possible to suppress the temperature of the heating liquid delivered from the liquid heating unit 188 from decreasing before being supplied to the lower surface 92 of the substrate 9.

  In order to efficiently heat the heating liquid through the inner peripheral wall 801 with the heating gas, the length in the longitudinal direction of the portion of the inner peripheral wall 801 that directly contacts the heating liquid and the heating gas in the heating gas supply nozzle 180a. (That is, the length in the direction parallel to the central axis J2 of the supply nozzle 180 and equal to the length of the outer peripheral wall 802 in the longitudinal direction) is preferably 50 mm or more. Further, since the supply nozzle 180 is a double tube in which the heating gas supply nozzle 180a surrounds the entire periphery of the heating liquid supply nozzle 180b, the heating liquid is heated more efficiently by the heating gas via the inner peripheral wall 801. In addition, the temperature uniformity of the heating liquid in the heating liquid supply nozzle 180b can be improved.

  As described above, in the supply nozzle 180 that is a double tube, the heating liquid supply nozzle 180b is disposed inside the heating gas supply nozzle 180a. Thereby, it can suppress that the flow of the heating liquid discharged from the heating liquid supply nozzle 180b is disturbed by the heating gas discharged from the heating gas supply nozzle 180a. Further, the discharge port 1805 of the heating liquid supply nozzle 180b and the portion in the vicinity of the discharge port 1805 of the inner peripheral wall 801 protrude from the jet port 1802 of the heating gas supply nozzle 180a. For this reason, it can further suppress that the flow of the heating liquid discharged from the heating liquid supply nozzle 180b is disturbed by the heating gas discharged from the heating gas supply nozzle 180a.

  In the lower surface facing portion 211, the periphery of each heating liquid pipe 806 is surrounded by the heating gas pipe 808 over the entire circumference, and the heating liquid pipe 806 directly contacts the heating liquid and the heating gas in the heating gas pipe 808. It becomes a partition wall. For this reason, the heating liquid flowing in the heating liquid pipe 806 is heated via the heating liquid pipe 806 by the heating gas flowing in the heating gas pipe 808. Thereby, it is possible to further suppress the temperature of the heating liquid sent from the liquid heating unit 188 from decreasing before being supplied to the lower surface 92 of the substrate 9. In order to efficiently heat the heating liquid in the heating liquid pipe 806 with the heating gas, a part of at least about 20 to 30 cm (centimeter) in the heating liquid pipe 806 from at least the facing surface 211a toward the liquid heating unit 188 is provided. It is preferable to directly contact the heated liquid and heated gas in the heated gas pipe 808.

  Further, the lower surface facing portion 211 is provided with a heating liquid manifold 807 to which a plurality of heating liquid pipes 806 are connected, and the outer surface of the heating liquid manifold 807 is covered with the heating gas manifold 809. Therefore, the side wall of the heating liquid manifold 807 directly contacts the heating liquid in the heating liquid manifold 807 and the heating gas in the heating gas manifold 809. For this reason, the heating liquid in the heating liquid manifold 807 is heated by the heating gas through the side wall of the heating liquid manifold 807. Thereby, it can further suppress that the temperature of the heating liquid sent out from the liquid heating unit 188 is lowered before being supplied to the lower surface 92 of the substrate 9. In order to efficiently heat the heating liquid in the heating liquid manifold 807 with the heating gas, it is preferable that almost the entire side wall of the heating liquid manifold 807 is in direct contact with the heating gas. From the viewpoint of heating the heating liquid in the heating liquid manifold 807 with the heating gas, at least a part of the side wall of the heating liquid manifold 807 may be in direct contact with the heating gas.

  In addition, the heating liquid from the liquid heating unit 188 is temporarily stored in the heating liquid manifold 807, and the heating liquid is supplied from the heating liquid manifold 807 to the plurality of heating liquid supply nozzles 180b, whereby the plurality of heating liquid supply nozzles 180b. Thus, the temperature uniformity of the heating liquid supplied to the lower surface 92 of the substrate 9 can be improved.

  As described above, the chemical liquid supplied from the upper nozzle 181 to the upper surface 91 of the substrate 9 and the heating liquid supplied from the heating liquid supply nozzle 180b to the lower surface 92 of the substrate 9 are the same liquid. In the substrate processing apparatus 1, not only can the apparatus structure be simplified by heating the liquid by one liquid heating unit 188, but also heating in the heating liquid manifold 807, the heating liquid piping 806 and the heating liquid supply nozzle 180 b. By heating the liquid with the heating gas, the temperature of the heating liquid supplied from the heating liquid supply nozzle 180b to the lower surface 92 of the substrate 9 is made higher than the temperature of the chemical liquid supplied from the upper nozzle 181 to the upper surface 91 of the substrate 9. can do. As a result, it is possible to further suppress or prevent the temperature of the substrate 9 and the temperature of the chemical solution supplied to the upper surface 91 of the substrate 9 from decreasing from the central portion toward the outer peripheral portion of the substrate 9. . As a result, the temperature uniformity of the substrate 9 and the chemical solution on the substrate 9 can be improved, and the in-plane uniformity of the etching process on the upper surface 91 of the substrate 9 can be improved.

  FIG. 13 shows the temperature distribution of the substrate 9 during chemical processing (step S121) performed while supplying the heating liquid to the lower surface 92 of the substrate 9 and supplying the heating gas to the space below the lower surface 92 in the substrate processing apparatus 1. FIG. In FIG. 13, solid lines denoted by reference numerals 97 and 98 indicate an estimated upper limit value and an estimated lower limit value of the temperature of the substrate 9 during the chemical treatment in the substrate processing apparatus 1, and the black circle marks indicate the above-described first comparative example. The temperature of the board | substrate at the time of the chemical | medical solution process in a substrate processing apparatus is shown. As shown in FIG. 13, in the substrate processing apparatus 1, the temperature of the substrate 9 is suppressed from decreasing as it goes from the central part of the substrate 9 to the outer peripheral part as compared with the substrate processing apparatus of the first comparative example.

  14 and 15 are plan views illustrating other examples of the arrangement of the supply nozzles 180 in the lower surface facing portion 211 of the substrate processing apparatus 1. Also in the example shown in FIGS. 14 and 15, six supply nozzles 180 are provided at the attachment position 1801 in the lower surface facing portion 211. When two supply nozzles 180 having the same radial distance from the central axis J1 are referred to as “nozzle pairs”, in the example illustrated in FIG. 14, the nozzle pairs of the three supply nozzles 180 are provided on the lower surface facing portion 211. . The two supply nozzles 180 of each nozzle pair are arranged at positions facing each other across the central axis J1 on the same circumference around the central axis J1. In other words, the two supply nozzles 180 of each nozzle pair are arranged at intervals of 180 ° in the circumferential direction around the central axis J1. The six supply nozzles 180 are arranged at equiangular intervals (60 ° intervals) in the circumferential direction.

  In the example shown in FIG. 15, the two supply nozzles 180 are arranged at positions facing each other across the central axis J1 on the same circumference around the central axis J1. The other four supply nozzles 180 are arranged on the same circumference centered on the central axis J1 on the outer side in the radial direction than the two supply nozzles 180. The four supply nozzles 180 are arranged at equiangular intervals (90 ° intervals) in the circumferential direction.

  In the example shown in FIGS. 14 and 15, a plurality of supply nozzles 180 (that is, the heating gas supply nozzle 180a and the heating liquid supply nozzle 180b) having different radial distances from the central axis J1 are provided. In other words, the radial distance between one supply nozzle 180 and the central axis J1 among the plurality of supply nozzles 180 is the radial distance between the other supply nozzle 180 and the central axis J1. Different. For this reason, when the lower surface 92 of the substrate 9 is heated by the heating liquid from the heating liquid supply nozzle 180 b of each supply nozzle 180, the temperature of the chemical solution supplied to the upper surface 91 of the substrate 9 is changed from the central portion of the substrate 9. It can further be suppressed or prevented that it falls as it goes to an outer peripheral part. Similarly, when the lower surface 92 of the substrate 9 is heated by the heating gas from the heating gas supply nozzle 180 a of each supply nozzle 180, the temperature of the chemical solution supplied to the upper surface 91 of the substrate 9 is the center of the substrate 9. It can be further suppressed or prevented from decreasing toward the outer periphery. In any case, the temperature uniformity of the substrate 9 in the radial direction and the chemical solution on the substrate 9 can be further improved, and the in-plane uniformity of the etching process on the upper surface 91 of the substrate 9 can be further improved.

  Various changes can be made in the substrate processing apparatus 1 described above.

  For example, in the lower surface facing portion 211, the heating gas pipe 808 and the heating liquid pipe 806 are not necessarily double pipes and may be provided apart from each other. Further, the heating liquid manifold 807 is not necessarily provided.

  The supply nozzle 180 does not necessarily need to be a double tube in which the heating liquid supply nozzle 180b is positioned inside the heating gas supply nozzle 180a. If the structure of the supply nozzle 180 is a structure in which the heating gas supply nozzle 180a and the heating liquid supply nozzle 180b share a partition wall that directly contacts the heating gas and the heating liquid and become one supply nozzle 180, Various changes may be made. For example, as shown in FIG. 16, the inside of the cylindrical supply nozzle 180 c may be divided into two by a partition wall 803. In the supply nozzle 180c, a portion on the right side of the partition wall 803 is a heated gas supply nozzle 180a, and a portion on the left side of the partition wall 803 is a heated liquid supply nozzle 180b.

  In the substrate processing apparatus 1, the lower nozzle 182 is connected to the liquid heating unit 188 and the chemical solution supply unit 183, and the heating liquid is supplied to the lower surface 92 of the substrate 9 in steps S 12 and S 121. Alternatively, a heating liquid (that is, a chemical liquid heated to a temperature higher than that of the substrate 9) may be supplied. In other words, the lower nozzle 182 that faces the center of the lower surface 92 of the substrate 9 may be included in the plurality of heating liquid supply nozzles 180b.

  In the substrate processing apparatus 1, instead of the liquid heating unit 188, the first liquid heating unit that heats the chemical solution supplied from the chemical solution supply unit 183 to the upper nozzle 181, and the chemical solution supply unit 183 to the heating liquid supply nozzle 180 b. A second liquid heating unit that heats the supplied chemical liquid independently of the first liquid heating unit may be provided. Thereby, the temperature of the chemical liquid supplied to the upper surface 91 of the substrate 9 and the temperature of the heating liquid supplied to the lower surface 92 of the substrate 9 can be individually controlled.

  The upper nozzle 181 does not necessarily need to be fixed so as to face the central portion of the upper surface 91 of the substrate 9. If the upper nozzle 181 can supply a processing liquid (that is, the above-described chemical solution, pure water, IPA, or the like) to at least the central portion of the upper surface 91, for example, the central portion and the outer edge portion of the substrate 9 above the substrate 9. The processing liquid may be supplied while reciprocating between the two.

  The processing liquid supplied from the upper nozzle 181 to the upper surface 91 of the substrate 9 and the heating liquid supplied from the heating liquid supply nozzle 180b to the lower surface 92 of the substrate 9 may be different liquids. Further, the inert gas supplied from the upper nozzle 181 into the chamber 12 and the heated gas supplied from the heated gas supply nozzle 180a may be different gases. For example, when the substrate 9 is dried, nitrogen gas may be supplied from the upper nozzle 181 and dry air may be supplied from the heated gas supply nozzle 180a. Thereby, the running cost which concerns on drying of the board | substrate 9 can be reduced.

  The facing surface 211 a of the lower surface facing portion 211 of the chamber bottom 210 may be a surface parallel to the lower surface 92 of the substrate 9. Further, the number of supply nozzles 180 provided in the lower surface facing portion 211 may be one, or may be two or more. That is, in the substrate processing apparatus 1, at least one supply nozzle 180 is provided. The position in the radial direction of the supply nozzle 180 and the number of nozzles provided on the same circumference are appropriately changed according to the temperature of the substrate 9 required during chemical treatment or drying.

  In the substrate processing apparatus 1, a pressurizing unit that supplies and pressurizes the gas to the chamber space 120 may be provided. The pressurization of the chamber space 120 is performed in the second sealed state in which the chamber 12 is sealed, and the chamber space 120 becomes a pressurized atmosphere higher than the atmospheric pressure. Note that the inert gas supply unit 186 and the heated gas supply unit 187 may also serve as the pressurizing unit.

  The chamber opening / closing mechanism 131 does not necessarily need to move the chamber lid 122 in the vertical direction, and may move the chamber body 121 in the vertical direction with the chamber lid 122 fixed. The chamber 12 is not necessarily limited to a substantially cylindrical shape, and may have various shapes.

  The shapes and structures of the stator portion 151 and the rotor portion 152 of the substrate rotation mechanism 15 may be variously changed. The rotor unit 152 does not necessarily need to rotate in a floating state, and a structure such as a guide for mechanically supporting the rotor unit 152 is provided in the chamber 12, and the rotor unit 152 rotates along the guide. Good. The substrate rotation mechanism 15 is not necessarily a hollow motor, and an axial rotation type motor may be used as the substrate rotation mechanism.

  In the substrate processing apparatus 1, the enlarged sealed space 100 may be formed when a portion (for example, the side wall portion 611) other than the upper surface portion 612 of the cup portion 161 is in contact with the chamber lid portion 122. The shape of the cup part 161 may be changed as appropriate.

  The shapes of the upper nozzle 181, the lower nozzle 182, and the supply nozzle 180 (that is, the heated gas supply nozzle 180a and the heated liquid supply nozzle 180b) are not limited to protruding shapes. Any part having a discharge port for discharging the treatment liquid or the heating liquid or a discharge port for discharging the inert gas or the heating gas is included in the concept of the nozzle of the present embodiment.

  In the substrate processing apparatus 1, various processes using a chemical reaction other than the etching process described above, for example, removal of an oxide film on the substrate or development with a developer, are performed by the chemical liquid supplied from the chemical liquid supply unit 183. It's okay.

  The substrate processing apparatus 1 may be used for processing a glass substrate used in a display device such as a liquid crystal display device, a plasma display, and an FED (field emission display) in addition to a semiconductor substrate. Alternatively, the substrate processing apparatus 1 may be used for processing of an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, a ceramic substrate, a solar cell substrate, and the like.

  The configurations in the above-described embodiments and modifications may be combined as appropriate as long as they do not contradict each other.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 9 Substrate 12 Chamber 15 Substrate rotation mechanism 91 Upper surface 92 Lower surface 100 Enlarged sealed space 121 Chamber body 122 Chamber lid portion 141 Substrate support portion 161 Cup portion 163 Cup facing portion 180, 180c Supply nozzle 180a Heating gas supply nozzle 180b Heating Liquid supply nozzle 181 Upper nozzle 188 Liquid heating part 211 Lower surface facing part 211a Opposing surface 801 Inner peripheral wall J1 Central axis S11 to S16, S121 Steps

Claims (11)

A substrate processing apparatus for processing a substrate,
A substrate support for supporting the outer edge of the substrate in a horizontal state;
A substrate rotation mechanism that rotates the substrate support portion together with the substrate about a central axis that faces the vertical direction;
A treatment liquid supply nozzle for supplying a treatment liquid having a temperature higher than that of the substrate to the upper surface of the substrate;
At least one supply nozzle facing the lower surface of the substrate between the central axis and the outer periphery of the substrate;
With
Each supply nozzle of the at least one supply nozzle is
A heating liquid supply nozzle for supplying a heating liquid higher in temperature than the substrate to the lower surface of the substrate;
A heating gas supply nozzle that ejects a heating gas having a temperature higher than that of the substrate toward the lower surface of the substrate and shares a partition wall that directly contacts the heating liquid and the heating gas with the heating liquid supply nozzle; ,
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
The substrate processing apparatus, wherein each of the supply nozzles is a double tube that surrounds the heating liquid supply nozzle. The substrate processing apparatus according to claim 1, wherein:
The at least one supply nozzle is a plurality of supply nozzles;
2. The substrate processing apparatus, wherein two or more supply nozzles among the plurality of supply nozzles are positioned on the same circumference centered on the central axis. A substrate processing apparatus according to any one of claims 1 to 3,
The at least one supply nozzle is a plurality of supply nozzles;
A radial distance between one supply nozzle of the plurality of supply nozzles and the central axis is different from a radial distance between the other supply nozzle and the central axis. Substrate processing equipment. The substrate processing apparatus according to claim 1, wherein:
The treatment liquid and the heating liquid are the same liquid,
The substrate processing apparatus further includes a liquid heating unit that heats the liquid supplied to the processing liquid supply nozzle and the heating liquid supply nozzle of each of the supply nozzles. The substrate processing apparatus according to claim 5,
In each of the supply nozzles, the heating liquid in the heating liquid supply nozzle is heated through the partition wall by the heating gas in the heating gas supply nozzle, so that the temperature becomes higher than that of the processing liquid. A substrate processing apparatus. The substrate processing apparatus according to claim 1, wherein:
In each of the supply nozzles, the heating liquid in the heating liquid supply nozzle is heated by the heating gas in the heating gas supply nozzle through the partition wall. A substrate processing apparatus according to any one of claims 1 to 7,
The substrate support portion is annular around the central axis;
The substrate processing apparatus further includes a lower surface facing portion having a facing surface facing the lower surface of the substrate inside the substrate support portion,
The substrate processing apparatus, wherein the facing surface is an inclined surface that is separated from the substrate as it is separated from the central axis. A substrate processing apparatus according to any one of claims 1 to 8,
The substrate processing apparatus, wherein the at least one supply nozzle is inclined with respect to the central axis. A substrate processing apparatus according to any one of claims 1 to 9,
The substrate processing apparatus, wherein the processing liquid supply nozzle is fixed to face a central portion of the upper surface of the substrate. A substrate processing apparatus according to any one of claims 1 to 10,
A substrate processing apparatus, further comprising: a sealed space forming unit that forms a sealed internal space in which processing of the substrate by the processing liquid is performed.

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