JP6057886B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate processing apparatus for processing a substrate.

  Conventionally, in a manufacturing process of a semiconductor substrate (hereinafter simply referred to as “substrate”), various types of processing are performed on the substrate using various types of substrate processing apparatuses. For example, by supplying a chemical solution to a substrate having a resist pattern formed on the surface, a process such as etching is performed on the surface of the substrate. In addition, after the etching process is completed, a process of removing the resist on the substrate or cleaning the substrate is also performed. Depending on the processing, processing in a sealed space may be required.

  The substrate processing apparatus of Patent Document 1 has a sealed chamber composed of a chamber body and a lid member. The chamber body and the lid member are not in contact with each other, and a liquid seal structure is provided between them. The lid member is rotatable with respect to the chamber body, and rotation of the lid member can stabilize the airflow on the substrate while reducing the volume of the sealed space.

JP 2011-216607 A

  By the way, in the apparatus of Patent Document 1, the boundary between the lid member and the chamber body is visible from the substrate side. Therefore, there is a possibility that the processing liquid enters the boundary and the solidified processing liquid becomes a generation source of particles. Further, if the height of the chamber is to be kept low, the position of the boundary between the lid member and the chamber body is lowered, and the boundary is further exposed to the processing liquid. Furthermore, the apparatus of Patent Document 1 is not suitable for collecting used processing liquid because all of the processing liquid flows in the chamber in the same manner.

  The present invention has been made in view of the above problems, and an object thereof is to realize the suppression of the generation of particles and the recovery of the processing liquid while reducing the chamber.

  The invention according to claim 1 is a substrate processing apparatus for processing a substrate, comprising a chamber main body and a chamber lid, wherein the chamber lid is close to or in contact with the upper opening of the chamber main body. A chamber that forms a chamber space in the closed state; a chamber opening / closing mechanism that moves the chamber lid portion relative to the chamber body in the vertical direction; and A substrate holding unit for holding the substrate; a substrate rotating mechanism for rotating the substrate together with the substrate holding unit about a central axis facing in the vertical direction; a processing liquid discharging unit for supplying a processing liquid onto the substrate; and the chamber A lateral space is formed on the outer periphery of the chamber, and the chamber lid is separated from the chamber body. And a cup part that receives the processing liquid scattered from the rotating substrate through an annular opening formed around the substrate, and the lower part of the chamber lid part protrudes downward over the entire circumference. Including a protrusion, and in the closed state of the chamber, the lower end of the lower protrusion is positioned below the substrate held by the substrate holder, and the lower protrusion is formed of the chamber lid, the chamber body, The cup body includes the chamber body, the chamber lid part, and the cup part when the cup part is in contact with the chamber lid part in a state where the inner side in the radial direction of the gap or boundary is formed and the annular opening is formed The part forms one enlarged sealed space.

  Invention of Claim 2 is the substrate processing apparatus of Claim 1, Comprising: The said chamber cover part contains the cyclic | annular recessed part dented toward the radial direction outward above the said downward protrusion part, In the chamber closed state, the annular recess is located on the side of the substrate held by the substrate holding part.

  A third aspect of the present invention is the substrate processing apparatus according to the first or second aspect, wherein the chamber main body protrudes upward over the entire circumference on the radially outer side of the lower protrusion. The upper end of the upward projecting portion is pointed upward.

  According to a fourth aspect of the present invention, there is provided the substrate processing apparatus according to any one of the first to third aspects, wherein a first discharge path for discharging the gas in the cup portion and a first discharge path for discharging the gas in the chamber. 2, and when the processing liquid is supplied onto the rotating substrate when the chamber body is in a closed state, the chamber body and the chamber lid are close to each other without contact. The exhaust of is stopped.

  A fifth aspect of the present invention is the substrate processing apparatus according to the first or second aspect, wherein the chamber body includes an upper projecting portion projecting upward on a radially outer side of the lower projecting portion, and the chamber. In the closed state, an upper end of the upper protruding portion is in contact with the chamber lid portion, and an upper portion of the upper protruding portion or a portion in contact with the upper end of the upper protruding portion of the chamber lid portion includes an elastic seal member.

  A sixth aspect of the present invention is the substrate processing apparatus according to the first to fifth aspects, further comprising a cup part moving mechanism for moving the cup part in a vertical direction, wherein the position of the chamber body is fixed. The position of the cup portion when the substrate is carried in between the chamber body and the chamber lid portion is lower than the position of the cup portion in the state where the enlarged sealed space is formed.

  In the present invention, it is possible to suppress the generation of particles and collect the processing liquid while reducing the chamber.

It is sectional drawing of a substrate processing apparatus. It is a figure which shows the flow of a process in a substrate processing apparatus. It is sectional drawing of the substrate processing apparatus of an open state. It is sectional drawing of the substrate processing apparatus of a 1st closed state. It is sectional drawing of the substrate processing apparatus of a 2nd closed state. It is sectional drawing of a part of substrate processing apparatus. It is sectional drawing of the other example of a part of substrate processing apparatus. It is sectional drawing of the further another example of a part of substrate processing apparatus. It is sectional drawing of the further another example of a part of substrate processing apparatus.

  FIG. 1 is a cross-sectional view showing a substrate processing apparatus 1 according to an embodiment of the present invention. The substrate processing apparatus 1 is a single-wafer type apparatus that supplies a processing liquid to a substantially disk-shaped semiconductor substrate 9 (hereinafter simply referred to as “substrate 9”) to process the substrates 9 one by one. In FIG. 1, the provision of parallel oblique lines is omitted in the cross section of a part of the configuration of the substrate processing apparatus 1 (the same applies to other cross sectional views).

  The substrate processing apparatus 1 includes a chamber 12, a top plate 123, a chamber opening / closing mechanism 131, a substrate holding unit 14, a substrate rotating mechanism 15, a liquid receiving unit 16, and a cover 17. The cover 17 covers the upper side and the side of the chamber 12.

  The chamber 12 includes a chamber main body 121 and a chamber lid portion 122. The inner peripheral surface of the chamber 12 is a substantially cylindrical surface centered on a central axis J1 that faces in the vertical direction. The chamber main body 121 includes a chamber bottom portion 210 and a chamber side wall portion 214. The chamber bottom portion 210 has a substantially disc-shaped central portion 211, a substantially cylindrical inner wall portion 212 extending downward from the outer edge portion of the central portion 211, and a radially outer side from the lower end of the inner wall portion 212. A substantially annular plate-like annular bottom 213, a substantially cylindrical outer wall 215 extending upward from the outer edge of the annular bottom 213, and a substantially annular ring extending radially outward from the upper end of the outer wall 215 And a plate-like base portion 216.

  The chamber side wall portion 214 has an annular shape centering on the central axis J1. The chamber side wall portion 214 is disposed on the base portion 216 and forms a part of the inner peripheral surface of the chamber main body 121. A member forming the chamber side wall portion 214 also serves as a part of the liquid receiving portion 16 as described later. In the following description, a space surrounded by the chamber side wall part 214, the outer wall part 215, the annular bottom part 213, the inner wall part 212, and the outer edge part of the central part 211 is referred to as a lower annular space 217.

  When the substrate 9 is supported by the substrate holding unit 14, the lower surface 92 of the substrate 9 faces the upper surface of the central portion 211 of the chamber bottom portion 210. In the following description, the central portion 211 of the chamber bottom 210 is referred to as a “lower surface facing portion 211”.

  The chamber lid 122 has a substantially disc shape perpendicular to the central axis J1 and includes the upper portion of the chamber 12. The chamber lid 122 closes the upper opening of the chamber body 121. FIG. 1 shows a state where the chamber lid 122 is separated from the chamber main body 121. When the chamber lid 122 closes the upper opening of the chamber body 121, the outer edge of the chamber lid 122 is close to the upper portion of the chamber side wall 214.

  The chamber opening / closing mechanism 131 moves the chamber lid 122, which is a movable part of the chamber 12, relative to the chamber body 121, which is another part of the chamber 12, in the vertical direction. In the present embodiment, the position of the chamber body 121 is fixed, and the chamber opening / closing mechanism 131 is a lid raising / lowering mechanism that raises and lowers the chamber lid 122. When the chamber lid 122 moves in the vertical direction, the top plate 123 also moves in the vertical direction together with the chamber lid 122. A chamber space 120 (see FIG. 5) is formed in the chamber 12 by the chamber lid 122 being close to the chamber body 121 and the upper opening being closed. In other words, since the chamber lid portion 122 and the chamber body 121 are close to each other, the chamber space 120 is substantially closed.

  As will be described later, the upper opening may be closed by contacting the chamber lid 122 and the chamber body 121. In this case, since the upper opening of the chamber main body 121 is closed by the chamber lid part 122, the chamber space 120 is hermetically sealed. Hereinafter, a state in which the chamber space 120 is formed with the chamber cover 122 close to or in contact with the upper opening is referred to as a “chamber closed state”.

  The substrate holding unit 14 holds the substrate 9 in a horizontal state. That is, the substrate 9 is held by the substrate holding part 14 with the upper surface 91 facing upward in the direction perpendicular to the central axis J1. In the chamber closed state, the substrate 9 is located in the chamber space 120. The substrate holding portion 14 includes the above-described substrate support portion 141 that supports the outer edge portion of the substrate 9 (that is, the portion in the vicinity of the outer periphery including the outer periphery) from the lower side, and the outer edge of the substrate 9 supported by the substrate support portion 141. And a substrate pressing part 142 for pressing the part from above. The substrate support portion 141 includes a substantially annular plate-like support portion base 413 centering on the central axis J1 and a plurality of first contact portions 411 fixed to the upper surface of the support portion base 413. The substrate pressing portion 142 includes a plurality of second contact portions 421 that are fixed to the lower surface of the top plate 123. The circumferential positions of the plurality of second contact portions 421 are actually different from the circumferential positions of the plurality of first contact portions 411.

  The top plate 123 has a substantially disc shape perpendicular to the central axis J1. The top plate 123 is disposed below the chamber lid part 122 and above the substrate support part 141. The top plate 123 has an opening at the center. When the substrate 9 is supported by the substrate support portion 141, the upper surface 91 of the substrate 9 faces the lower surface of the top plate 123 perpendicular to the central axis J1. The diameter of the top plate 123 is larger than the diameter of the substrate 9, and the outer peripheral edge of the top plate 123 is located on the outer side in the radial direction over the entire periphery of the outer peripheral edge of the substrate 9.

  In the state shown in FIG. 1, the top plate 123 is supported so as to be suspended by the chamber lid portion 122. The chamber lid part 122 has a substantially annular plate holding part 222 at the center. The plate holding part 222 includes a substantially cylindrical tube part 223 centered on the central axis J1 and a substantially disk-shaped flange part 224 centered on the central axis J1. The flange part 224 spreads radially inward from the lower end of the cylindrical part 223.

  The top plate 123 includes an annular held portion 237. The held portion 237 includes a substantially cylindrical tube portion 238 centered on the central axis J1 and a substantially disk-shaped flange portion 239 centered on the central axis J1. The cylinder portion 238 extends upward from the upper surface of the top plate 123. The flange portion 239 extends outward from the upper end of the cylindrical portion 238 in the radial direction. The cylindrical portion 238 is located on the radially inner side of the cylindrical portion 223 of the plate holding portion 222. The flange portion 239 is located above the flange portion 224 of the plate holding portion 222 and faces the flange portion 224 in the up-down direction. When the lower surface of the flange portion 239 of the held portion 237 is in contact with the upper surface of the flange portion 224 of the plate holding portion 222, the top plate 123 is attached to the chamber lid portion 122 so as to be suspended from the chamber lid portion 122.

  The substrate rotation mechanism 15 is a so-called hollow motor. The substrate rotation mechanism 15 includes an annular stator portion 151 centered on the central axis J1 and an annular rotor portion 152. The rotor portion 152 includes a substantially annular permanent magnet. The surface of the permanent magnet is molded with PTFE resin. The rotor part 152 is disposed in the lower annular space 217. A support portion base 413 of the substrate support portion 141 is attached to the upper portion of the rotor portion 152 via a connection member. The support portion base 413 is located above the rotor portion 152.

  The stator portion 151 is disposed outside the chamber 12 and radially outside the rotor portion 152. In the present embodiment, the stator portion 151 is fixed to the outer wall portion 215 and the base portion 216 of the chamber bottom portion 210 and is positioned below the liquid receiving portion 16. Stator portion 151 includes a plurality of coils arranged in the circumferential direction about central axis J1.

  When current is supplied to the stator portion 151, a rotational force about the central axis J1 is generated between the stator portion 151 and the rotor portion 152. Thereby, the rotor part 152 rotates in a horizontal state around the central axis J1. Due to the magnetic force acting between the stator portion 151 and the rotor portion 152, the rotor portion 152 floats in the chamber 12 without contacting the chamber 12 directly or indirectly, and the substrate 9 is centered on the central axis J1. Are rotated together with the substrate support 141 in a floating state.

  The liquid receiving part 16 includes a cup part 161, a cup part moving mechanism 162, and a cup facing part 163. The cup portion 161 has an annular shape centered on the central axis J <b> 1, and is located on the entire outer circumference in the radial direction of the chamber 12. The cup part moving mechanism 162 moves the cup part 161 in the vertical direction. The cup part moving mechanism 162 is disposed on the radially outer side of the cup part 161. The cup moving mechanism 162 is located at a position different from the chamber opening / closing mechanism 131 in the circumferential direction. The cup facing part 163 is located below the cup part 161 and faces the cup part 161 in the vertical direction. The cup facing portion 163 is a part of a member that forms the chamber side wall portion 214. The cup facing portion 163 has an annular liquid receiving recess 165 positioned on the radially outer side of the chamber side wall portion 214.

  The cup part 161 includes a side wall part 611, an upper surface part 612, and a bellows 617. The side wall portion 611 has a substantially cylindrical shape centered on the central axis J1. The upper surface portion 612 has a substantially annular plate shape centered on the central axis J1, and extends from the upper end portion of the side wall portion 611 radially inward and radially outward. When the cup portion 161 is lowered, the lower portion of the side wall portion 611 is positioned in the liquid receiving recess 165.

  The bellows 617 has a substantially cylindrical shape centered on the central axis J1, and can be expanded and contracted in the vertical direction. The bellows 617 is provided over the entire circumference on the radially outer side of the side wall portion 611. The bellows 617 is formed of a material that does not allow gas or liquid to pass through. The upper end portion of the bellows 617 is connected to the lower surface of the outer edge portion of the upper surface portion 612 over the entire circumference. In other words, the upper end portion of the bellows 617 is indirectly connected to the side wall portion 611 via the upper surface portion 612. The connection portion between the bellows 617 and the upper surface portion 612 is sealed, and passage of gas or liquid is prevented. A lower end portion of the bellows 617 is indirectly connected to the chamber body 121 via the cup facing portion 163. Even at the connecting portion between the lower end portion of the bellows 617 and the cup facing portion 163, the passage of gas or liquid is prevented.

  An upper nozzle 181 is fixed at the center of the chamber lid 122. The upper nozzle 181 can be inserted into the central opening of the top plate 123. The upper nozzle 181 has a plurality of liquid discharge ports in the center, and has a gas jet port around it. Different types of processing liquids are discharged from the plurality of liquid discharge ports. The upper nozzle 181 is also a processing liquid discharge unit that supplies a processing liquid onto the substrate 9, and is also a gas ejection unit that supplies a gas onto the substrate 9. In the chamber 12, a scan nozzle that scans a discharge head that discharges the processing liquid onto the substrate 9 may be provided. A lower nozzle 182 is attached to the center of the lower surface facing portion 211 of the chamber bottom portion 210. The installation positions of the upper nozzle 181 and the lower nozzle 182 are not necessarily limited to the center portion, and may be positions facing the outer edge of the substrate 9, for example.

  A first discharge path 191 is connected to the liquid receiving recess 165 of the liquid receiving portion 16. The first discharge path 191 is connected to the gas-liquid separator. A second discharge path 192 is connected to the lower annular space 217 of the chamber bottom 210. The second discharge path 192 is connected to another gas-liquid separator. The operations of the chamber opening / closing mechanism 131, the substrate rotating mechanism 15, and the cup moving mechanism 162, and the flow of liquid and gas in the nozzle and the discharge path are controlled by a control unit (not shown).

  The upper nozzle 181 is connected to a chemical solution supply unit via a valve. The chemical solution supplied onto the substrate 9 via the upper nozzle 181 is, for example, an etching solution such as hydrofluoric acid or an aqueous tetramethylammonium hydroxide solution. The upper nozzle 181 is also connected to an IPA supply unit and a pure water supply unit via a valve. The upper nozzle 181 supplies deionized water (DIW) and isopropyl alcohol (IPA) to the substrate 9. The lower nozzle 182 is connected to a pure water supply unit via a valve. Pure water is supplied to the lower surface of the substrate 9 by the lower nozzle 182. In the substrate processing apparatus 1, a processing liquid supply unit that supplies a processing liquid other than the chemical liquid, the pure water, and the IPA that are processing liquids may be provided.

The upper nozzle 181 is also connected to an inert gas supply unit via a valve. An inert gas is supplied into the chamber 12 through the upper nozzle 181. In the present embodiment, nitrogen (N ₂ ) gas is used as the inert gas, but a gas other than nitrogen gas may be used.

  As shown in FIG. 1, a plurality of first engagement portions 241 are arranged in the circumferential direction on the lower surface of the outer edge portion of the top plate 123, and a plurality of second engagement portions 242 are arranged on the upper surface of the support portion base 413. Are arranged in the circumferential direction. Actually, the first engagement portion 241 and the second engagement portion 242 are connected to the plurality of first contact portions 411 of the substrate support portion 141 and the plurality of second contact portions 421 of the substrate pressing portion 142. Arranged at different positions in the direction. It is preferable that three or more sets of these engaging portions are provided, and four sets are provided in the present embodiment. A concave portion that is recessed upward is provided at the lower portion of the first engaging portion 241. The second engagement portion 242 protrudes upward from the support portion base 413.

  FIG. 2 is a diagram illustrating a processing flow of the substrate 9 in the substrate processing apparatus 1. In the substrate processing apparatus 1, as shown in FIG. 3, in a state where the chamber lid part 122 is spaced apart from the chamber body 121 and positioned above, and the cup part 161 is spaced apart from the chamber lid part 122 and positioned below. The substrate 9 is carried into the chamber 12 by an external transport mechanism and supported from below by the substrate support portion 141 (step S11). Hereinafter, the state of the chamber 12 and the cup part 161 shown in FIG. 3 is referred to as an “open state”. The opening between the chamber lid part 122 and the chamber side wall part 214 has an annular shape centering on the central axis J1, and is hereinafter referred to as “annular opening 81”. In other words, in the substrate processing apparatus 1, the chamber lid 122 is separated from the chamber main body 121, whereby the annular opening 81 is formed around the substrate 9 (that is, radially outside). In step S <b> 11, the substrate 9 is carried in via the annular opening 81.

  When the substrate 9 is carried in, the cup part 161 is raised from the position shown in FIG. 3 to the position shown in FIG. 4 by the cup part moving mechanism 162, and is located over the entire circumference on the radially outer side of the annular opening 81. . In the following description, the state of the chamber 12 and the cup part 161 shown in FIG. 4 is referred to as a “first closed state” (the same applies to the state of FIG. 1). 4 is referred to as a “liquid receiving position”, and the position of the cup 161 illustrated in FIG. 3 is referred to as a “retracted position”. The cup part moving mechanism 162 moves the cup part 161 in the vertical direction between a liquid receiving position radially outside the annular opening 81 and a retracted position below the liquid receiving position.

  In the cup portion 161 located at the liquid receiving position, the side wall portion 611 faces the annular opening 81 in the radial direction. Further, the upper surface of the inner edge portion of the upper surface portion 612 is in contact with the lip seal 232 at the lower end of the outer edge portion of the chamber lid portion 122 over the entire circumference. As a result, a seal portion for preventing the passage of gas or liquid is formed between the chamber lid portion 122 and the upper surface portion 612 of the cup portion 161. With the cup portion 161 positioned at the liquid receiving position in a state where the annular opening 81 is formed, a sealed space (hereinafter referred to as “a”) surrounded by the chamber main body 121, the chamber lid portion 122, the cup portion 161, and the cup facing portion 163. An enlarged sealed space 100 ") is formed. The expanded sealed space 100 is a space between the chamber lid portion 122 and the chamber body 121, that is, the chamber space 120 expanded in the vertical direction, and the side space 160 surrounded by the cup portion 161 and the cup facing portion 163. Is a space formed by communicating through the annular opening 81. As long as the expanded sealed space 100 is formed by a portion including the chamber main body 121, the chamber lid portion 122, and the cup portion 161, another portion may be used.

  Subsequently, the substrate rotation mechanism 15 starts rotating the substrate 9 at a constant rotation speed (which is a relatively low rotation speed, hereinafter referred to as “steady rotation speed”). Furthermore, supply of an inert gas (here, nitrogen gas) from the upper nozzle 181 to the enlarged sealed space 100 is started, and discharge of gas in the enlarged sealed space 100 from the first discharge path 191 is started. . As a result, after a predetermined time has elapsed, the enlarged sealed space 100 becomes an inert gas filled state filled with an inert gas (that is, a low oxygen atmosphere with a low oxygen concentration). The supply of the inert gas to the expanded sealed space 100 and the discharge of the gas in the expanded sealed space 100 may be performed from the open state shown in FIG.

  Next, the chemical solution is supplied from the chemical solution supply unit to the upper nozzle 181, and the chemical solution is discharged toward the upper surface 91 of the substrate 9 (step S <b> 12). The chemical solution spreads to the outer peripheral portion by the rotation of the substrate 9, and the entire upper surface 91 is covered with the chemical solution. Etching with a chemical solution is performed on the upper surface 91. Note that a heater may be provided in the chamber 12 so that the substrate 9 may be heated when the chemical solution is supplied.

  In the enlarged sealed space 100, the chemical liquid scattered from the upper surface 91 of the rotating substrate 9 is received by the cup portion 161 via the annular opening 81 and guided to the liquid receiving recess 165. The chemical solution guided to the liquid receiving recess 165 flows into the gas-liquid separation unit via the first discharge path 191. The chemical solution collected in the gas-liquid separation unit is reused after impurities and the like are removed through a filter and the like.

  When a predetermined time (for example, 60 to 120 seconds) elapses from the supply start of the chemical solution, the supply of the chemical solution is stopped. Subsequently, the substrate rotation mechanism 15 makes the rotation speed of the substrate 9 higher than the steady rotation speed for a predetermined time (for example, 1 to 3 seconds), and the chemical solution is removed from the substrate 9.

  The chamber lid part 122 and the cup part 161 move downward while maintaining the contact state. Then, as shown in FIG. 5, the lower end of the outer edge portion of the chamber lid portion 122 and the upper portion of the chamber side wall portion 214 approach each other with a slight gap. As a result, the annular opening 81 is substantially closed and the chamber space 120 is isolated from the side space 160. The cup portion 161 is located at the retracted position as in FIG. Hereinafter, the state of the chamber 12 and the cup part 161 shown in FIG. 5 is referred to as a “second closed state”. In the second closed state, the substrate 9 directly faces the inner wall of the chamber 12, and there is no other liquid receiving portion therebetween. In the second closed state, the chamber 12 is in the chamber closed state.

  In the second closed state, the plurality of second contact portions 421 of the substrate pressing portion 142 are in contact with the outer edge portion of the substrate 9. On the lower surface of the top plate 123 and the support portion base 413 of the substrate support portion 141, a plurality of pairs of magnets (not shown) that are opposed in the vertical direction are provided. Hereinafter, each pair of magnets is also referred to as a “magnet pair”. In the substrate processing apparatus 1, a plurality of magnet pairs are arranged at equiangular intervals at positions different from the first contact portion 411, the second contact portion 421, the first engagement portion 241, and the second engagement portion 242 in the circumferential direction. Arranged. In a state where the substrate pressing portion 142 is in contact with the substrate 9, a downward force is applied to the top plate 123 due to the magnetic force (attractive force) acting between the magnet pair.

  In the substrate processing apparatus 1, the substrate pressing portion 142 presses the substrate 9 against the substrate support portion 141 by the weight of the top plate 123 and the magnetic force of the magnet pair, thereby causing the substrate pressing portion 142 and the substrate support portion to be pressed. 141 and can be firmly held by being sandwiched from above and below.

  In the second closed state, the flange portion 239 of the held portion 237 is separated above the flange portion 224 of the plate holding portion 222, and the plate holding portion 222 and the held portion 237 are not in contact with each other. In other words, the holding of the top plate 123 by the plate holding part 222 is released. For this reason, the top plate 123 is rotated by the substrate rotation mechanism 15 together with the substrate holding unit 14 and the substrate 9 held by the substrate holding unit 14 independently of the chamber lid 122.

  Further, in the second closed state, the second engagement portion 242 is fitted in the recess at the lower portion of the first engagement portion 241. Thereby, the top plate 123 engages with the support portion base 413 of the substrate support portion 141 in the circumferential direction around the central axis J1. In other words, the first engagement portion 241 and the second engagement portion 242 are position fixing members that fix the relative position of the top plate 123 with respect to the substrate support portion 141 in the rotation direction. When the chamber lid part 122 is lowered, the rotation position of the support part base 413 is controlled by the substrate rotation mechanism 15 so that the first engagement part 241 and the second engagement part 242 are fitted.

  When the chamber space 120 and the side space 160 are independent of each other, the discharge of gas from the first discharge path 191 is stopped and the discharge of the gas in the chamber space 120 from the second discharge path 192 is started. Then, the supply of pure water, which is a rinse liquid or a cleaning liquid, to the substrate 9 is started by the pure water supply unit (step S13).

  Pure water from the pure water supply unit is discharged from the upper nozzle 181 and the lower nozzle 182 and continuously supplied to the central portions of the upper surface 91 and the lower surface 92 of the substrate 9. The pure water spreads to the outer peripheral portions of the upper surface 91 and the lower surface 92 by the rotation of the substrate 9 and scatters from the outer peripheral edge of the substrate 9 to the outside. Pure water scattered from the substrate 9 is received by the inner wall of the chamber lid 122 and discarded through the second discharge path 192 and the gas-liquid separation unit (the same applies to the drying process of the substrate 9 described later). Thereby, the cleaning of the chamber 12 is substantially performed together with the rinsing process of the upper surface 91 and the cleaning process of the lower surface 92 of the substrate 9.

  When a predetermined time has elapsed from the start of the supply of pure water, the supply of pure water is stopped. In the chamber space 120, the rotation speed of the substrate 9 is made sufficiently higher than the steady rotation speed. As a result, pure water is removed from the substrate 9, and the substrate 9 is dried (step S14). When a predetermined time has elapsed from the start of drying of the substrate 9, the rotation of the substrate 9 is stopped.

  Thereafter, the chamber lid 122 and the top plate 123 are raised, and the chamber 12 is opened as shown in FIG. In step S14, since the top plate 123 rotates together with the substrate support 141, almost no liquid remains on the lower surface of the top plate 123, and the liquid falls from the top plate 123 onto the substrate 9 when the chamber lid 122 is raised. There is no. The substrate 9 is unloaded from the chamber 12 by an external transfer mechanism (step S15). Note that after supplying pure water to the substrate 9 and before drying the substrate 9, IPA may be supplied from the IPA supply unit onto the substrate 9 so that the pure water is replaced with IPA on the substrate 9.

  As shown in FIG. 4, in the substrate processing apparatus 1, a cup portion 161 that forms a side space 160 is provided on the outer periphery of the chamber 12, and the chamber lid portion 122 is separated from the chamber body 121, that is, an annular opening 81. In a state where the cup portion 161 is in contact with the chamber lid portion 122, the expanded chamber space 120 and the side space 160 become one expanded sealed space 100. Further, when changing from the first closed state shown in FIG. 4 to the second closed state shown in FIG. 5, the chamber lid part 122 and the cup part 161 are moved downward. Thereby, the chamber space 120 and the side space 160 can be separated without opening the internal space during the processing of the substrate 9.

  FIG. 6 is a view showing the vicinity of the boundary between the chamber body 121 and the chamber lid 122 in the second closed state. The lower part of the inner peripheral part of the chamber lid part 122 has a downward projecting part 31 projecting downward. The downward protrusion 31 is an annular shape that exists over the entire circumference. The downward protruding portion 31 may be inclined with respect to the direction of gravity as long as it protrudes approximately downward. Further, the position of the downward projecting portion 31 in the chamber lid portion 122 is not limited to the inner peripheral portion of the chamber lid portion 122. In the chamber closed state, the lower end of the downward projecting portion 31 is positioned below the substrate 9 held by the substrate holding portion 14.

  The inner peripheral surface of the chamber lid portion 122 includes an annular recess 33 that is recessed radially outward on the upper side of the downward projecting portion 31. In the chamber closed state, the annular recess 33 is located on the side of the substrate 9 held by the substrate holder 14. Therefore, the processing liquid scattered from the substrate 9 is received by the annular recess 33, and then flows downward on the inner peripheral surface of the chamber lid part 122 and falls from the tip of the lower protruding part 31. By providing the annular recess 33, the flying distance of the processing liquid scattered from the substrate 9 can be increased, and splashing of the splash to the substrate 9 can be suppressed. The annular recess 33 is preferably a curved surface so that the liquid flows smoothly.

  Since the substrate processing apparatus 1 receives the processing liquid scattered on the inner peripheral surface of the chamber lid portion 122, the position of the chamber lid portion 122 can be lowered with respect to the substrate 9, and the chamber 12 is made smaller in the vertical direction. be able to. In addition, as described above, by utilizing the cup portion 161 located outside the chamber 12, the chamber 12 can be reduced in size and the processing liquid can be separated and recovered. Note that the processing liquid flowing down in the chamber 12 when the chamber is closed may be collected, and the processing liquid received at the cup portion 161 in the second closed state may be discarded. Both treatment liquids may be recovered.

  In the substrate processing apparatus 1, the position of the cup portion 161 shown in FIG. 3 when the substrate 9 is carried between the chamber main body 121 and the chamber lid portion 122 is the same as that shown in FIG. It is lower than the position of the cup part 161 shown. Therefore, when the substrate 9 is carried in, the rise of the chamber lid 122 can be minimized. As a result, the size of the space required for installation of the substrate processing apparatus 1 in the vertical direction can be reduced.

  As shown in FIG. 6, the chamber body 121 includes an upper protrusion 32 that protrudes upward. The upper protruding portion 32 is provided at the upper end of the chamber side wall portion 214 and exists over the entire circumference on the radially outer side of the lower protruding portion 31. The upper end of the upper protrusion 32 is pointed upward. The position of the upper end of the upper protrusion 32 is located above the position of the lower end of the lower protrusion 31. As described above, when the chamber is closed, the chamber body 121 and the chamber lid 122 are close to each other without contact. A slight gap 82 is formed between the lower protrusion 31 and the upper protrusion 32. The gap 82 is directed upward outward in the radial direction.

  The lower end of the downward projecting portion 31 and the inner peripheral surface of the chamber side wall portion 214 are sufficiently separated in the radial direction. Thereby, the processing liquid that has reached the lower end of the downward projecting portion 31 from the annular recess 33 falls without entering the gap 82. Preferably, the downward projecting portion 31 protrudes radially inward from the inner peripheral surface of the chamber main body 121.

  Further, the downward projecting portion 31 covers the radially inner side of the gap 82 in the chamber closed state. This also prevents the scattered processing liquid from directly reaching the gap 82 and entering. By preventing the processing liquid from entering the gap 82, the solidified processing liquid is prevented from becoming a generation source of particles. The downward projecting portion 31 only needs to cover the inner side in the radial direction of the gap 82 when viewed from the substrate 9, and the opening of the gap 82 may be exposed when viewed from the direction perpendicular to the central axis J1.

  Since the gap 82 exists, when the processing liquid is supplied onto the rotating substrate 9 in the chamber closed state, the discharge of the gas in the cup portion 161 from the first discharge path 191 shown in FIG. 5 is stopped. . In principle, the gas and the processing liquid in the chamber main body 121 are discharged from the second discharge path 192. Thereby, the approach of the processing liquid into the gap 82 can be more reliably suppressed. In addition, since the upper end of the downward protrusion part 31 is pointed upwards, even if a process liquid approachs into the clearance gap 82, the adhesion amount of a process liquid can be reduced.

  In a state where the chamber lid portion 122 and the cup portion 161 are in contact with each other via the lip seal 232, the position of the lower surface of the inner peripheral portion of the upper surface portion 612 is higher than the position of the lower end of the lower protruding portion 31. Thereby, in the 1st closed state shown in FIG. 4, possibility that a chemical | medical solution adheres between the chamber cover part 122 and the cup part 161 can be reduced.

  FIG. 7 is a view showing another example of the lower portion of the chamber lid 122. In FIG. 7, the lower part of the chamber lid part 122 has another downward protrusion part 31a. Hereinafter, the downward projecting portion 31a is referred to as an “additional downward projecting portion 31a”. The structure of other parts of the chamber lid 122 is the same as that shown in FIG. The additional lower protrusion 31a is located on the radially outer side of the upper protrusion 32 and protrudes downward over the entire circumference. The position of the lower end of the additional lower protrusion 31 a is lower than the position of the upper end of the upper protrusion 32. A gap 82 is formed by the lower protrusion 31, the upper protrusion 32, and the additional lower protrusion 31a. Thereby, the gap 82 once goes upward in the radial direction and then goes downward.

  Since the gap 82 has a more complicated labyrinth structure, movement of very fine droplets of the processing liquid to the outside of the chamber space 120 is further suppressed.

  FIG. 8 is a diagram illustrating another example of the upward projecting portion 32. The upper end of the upward projecting portion 32 in FIG. 8 is in contact with the lower portion of the chamber lid portion 122 when the chamber is closed. In other words, the chamber lid 122 contacts the upper opening of the chamber body 121 in the chamber closed state. Thereby, the chamber space 120 becomes a sealed space. Accordingly, the chamber space 120 can be decompressed during the processing of the substrate 9. For example, the drying process of the substrate 9 may be performed in a reduced pressure atmosphere lower than the atmospheric pressure.

  In order to realize sealing of the chamber space 120, the upper portion of the upper protrusion 32 includes an elastic seal member 35 formed of resin. As shown in FIG. 9, the portion in contact with the upper end of the upper protruding portion 32 of the chamber lid portion 122 may include an elastic seal member 35.

  8 and 9, the structures of the other portions of the chamber main body 121 and the chamber lid 122 are the same as those in FIG. 6. In the chamber closed state, the downward projecting portion 31 covers the radially inner side of the boundary 83 between the chamber lid portion 122 and the chamber body 121. Thereby, it is possible to suppress the generation of particles and collect the treatment liquid while reducing the chamber 12.

  Various changes can be made in the substrate processing apparatus 1.

  For example, the annular recess 33 may be omitted. The upper protrusion 32 may not be present. The labyrinth structure formed by the lower protruding portion 31 and the upper protruding portion 32 may be more complicated.

  The processing executed by the substrate processing apparatus 1 is not limited to the one shown in the above embodiment. In the substrate processing apparatus 1, when the chamber space 120 can be sealed, a pressurizing unit that supplies and pressurizes the gas to the chamber space 120 may be provided.

  The chamber opening / closing mechanism 131 does not necessarily need to move the chamber lid 122 in the vertical direction, and may move the chamber body 121 in the vertical direction with the chamber lid 122 fixed. The chamber 12 is not necessarily limited to a substantially cylindrical shape, and may have various shapes.

  The shapes and structures of the stator portion 151 and the rotor portion 152 of the substrate rotation mechanism 15 may be variously changed. The rotor unit 152 does not necessarily need to rotate in a floating state, and a structure such as a guide for mechanically supporting the rotor unit 152 is provided in the chamber 12, and the rotor unit 152 rotates along the guide. Good. The substrate rotation mechanism 15 is not necessarily a hollow motor, and an axial rotation type motor may be used as the substrate rotation mechanism.

  In the substrate processing apparatus 1, the enlarged sealed space 100 may be formed by contacting a portion other than the upper surface portion 612 of the cup portion 161, for example, the side wall portion 611 with the chamber lid portion 122. The structure of the liquid receiving part 16 may be changed as appropriate. For example, another cup part may be provided inside the cup part 161.

  The shapes of the upper nozzle 181 and the lower nozzle 182 are not limited to protruding shapes. Any part having a discharge port for discharging the processing liquid is included in the concept of the discharge unit of the present embodiment.

  The substrate processing apparatus 1 may be used for processing a glass substrate used in a display device such as a liquid crystal display device, a plasma display, and an FED (field emission display) in addition to a semiconductor substrate. Alternatively, the substrate processing apparatus 1 may be used for processing of an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, a ceramic substrate, a solar cell substrate, and the like.

  The configurations in the above-described embodiments and modifications may be combined as appropriate as long as they do not contradict each other.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 9 Substrate 12 Chamber 14 Substrate holding part 15 Substrate rotation mechanism 31 Lower protrusion part 32 Upper protrusion part 33 Annular recessed part 35 Elastic seal member 81 Annular opening 82 Gap 83 Boundary 100 Expanded sealed space 120 Chamber space 121 Chamber body 122 Chamber Lid 131 Chamber opening / closing mechanism 160 Side space 161 Cup part 162 Cup part moving mechanism 181 Upper nozzle (treatment liquid discharge part)
191 1st discharge path 192 2nd discharge path J1 central axis

Claims (6)

A substrate processing apparatus for processing a substrate,
A chamber having a chamber body and a chamber lid, and forming a chamber space in a closed state where the chamber lid is close to or in contact with the upper opening of the chamber body;
A chamber opening / closing mechanism for moving the chamber lid portion in a vertical direction relative to the chamber body;
A substrate holding part that is positioned in the chamber space in the chamber closed state and holds the substrate in a horizontal state;
A substrate rotation mechanism that rotates the substrate together with the substrate holding portion about a central axis that faces the vertical direction;
A processing liquid discharger for supplying a processing liquid onto the substrate;
It is located on the entire outer periphery of the chamber, forms a lateral space on the outer periphery of the chamber, and an annular opening formed around the substrate by separating the chamber lid from the chamber body. A cup portion that receives the processing liquid scattered from the rotating substrate;
With
The lower part of the chamber lid part includes a downward projecting part projecting downward over the entire circumference,
In the chamber closed state, the lower end of the lower protrusion is positioned below the substrate held by the substrate holder, and the lower protrusion is a gap between the chamber lid and the chamber body or Covering the radial inside of the boundary,
In a state where the annular opening is formed, the cup portion comes into contact with the chamber lid portion, so that a portion including the chamber main body, the chamber lid portion, and the cup portion forms one enlarged sealed space. A substrate processing apparatus. The substrate processing apparatus according to claim 1,
The chamber lid includes an annular recess recessed radially outwardly on the upper side of the downward projecting portion;
The substrate processing apparatus, wherein the annular recess is positioned on a side of the substrate held by the substrate holding portion in the chamber closed state. The substrate processing apparatus according to claim 1, wherein:
The chamber main body includes an upper protrusion that protrudes upward over the entire circumference on the radially outer side of the lower protrusion,
A substrate processing apparatus, wherein an upper end of the upward projecting portion is pointed upward. A substrate processing apparatus according to any one of claims 1 to 3,
A first discharge path for discharging the gas in the cup part;
A second exhaust path for exhausting the gas in the chamber;
Further comprising
The chamber main body and the chamber lid are close to each other in a non-contact state in the closed state of the chamber, and when the processing liquid is supplied onto the rotating substrate, the exhaust from the first discharge path is stopped. A substrate processing apparatus. The substrate processing apparatus according to claim 1, wherein:
The chamber body includes an upper protrusion protruding upward on a radially outer side of the lower protrusion;
In the chamber closed state, the upper end of the upward projecting portion is in contact with the chamber lid portion,
The substrate processing apparatus, wherein an upper portion of the upper protruding portion or a portion in contact with the upper end of the upper protruding portion of the chamber lid portion includes an elastic seal member. The substrate processing apparatus according to claim 1, wherein
A cup part moving mechanism for moving the cup part in the vertical direction;
The position of the chamber body is fixed,
The position of the cup portion when the substrate is carried between the chamber main body and the chamber lid portion is lower than the position of the cup portion in a state where the enlarged sealed space is formed. Processing equipment.

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