JP5978071B2 - Substrate processing equipment - Google Patents

Substrate processing equipment Download PDF

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JP5978071B2
JP5978071B2 JP2012191285A JP2012191285A JP5978071B2 JP 5978071 B2 JP5978071 B2 JP 5978071B2 JP 2012191285 A JP2012191285 A JP 2012191285A JP 2012191285 A JP2012191285 A JP 2012191285A JP 5978071 B2 JP5978071 B2 JP 5978071B2
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substrate
chamber
part
portion
cup
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JP2014049606A (en
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仁司 中井
仁司 中井
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株式会社Screenホールディングス
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Description

  The present invention relates to a substrate processing apparatus for processing a substrate.

  Conventionally, in a manufacturing process of a semiconductor substrate (hereinafter simply referred to as “substrate”), various types of processing are performed on the substrate using various types of substrate processing apparatuses. For example, by supplying a chemical solution to a substrate having a resist pattern formed on the surface, a process such as etching is performed on the surface of the substrate. In addition, after the etching process is completed, a process of removing the resist on the substrate or cleaning the substrate is also performed.

  In the apparatus of Patent Document 1, the wafer is dried after the developer on the wafer is washed away with a rinse liquid. Specifically, the wafer is carried into the rinsing unit and is adsorbed by the wafer adsorbing unit. After the opening of the rinsing unit is closed by a shutter, the internal space of the rinsing unit is evacuated. Then, the rinsing liquid is supplied while rotating the wafer at a low speed together with the wafer adsorbing portion in the reduced-pressure atmosphere, and then the wafer is dried by rotating the wafer at a high speed.

JP-A-9-246156

  By the way, when the process using the liquid is performed in the sealed chamber, the liquid attached to the lower surface of the chamber lid may fall onto the substrate. On the other hand, if a separate mechanism for removing the liquid adhering to the lower surface of the chamber lid is provided, the chamber becomes larger. When the chamber is increased in size, the amount of gas used for processing increases and the area occupied by the apparatus increases.

  The present invention has been made in view of the above problems, and an object of the present invention is to prevent a liquid adhering to the inside of a chamber from dropping onto a substrate with a simple structure.

The invention described in claim 1 is a substrate processing apparatus for processing a substrate, wherein a chamber forming a sealed internal space and a chamber lid including an upper portion of the chamber are relatively disposed with respect to other portions. A chamber opening / closing mechanism that moves up and down, a substrate holding unit that is disposed in the chamber and holds the substrate in a horizontal state, and a substrate rotating mechanism that rotates the substrate together with the substrate holding unit about a central axis that faces in the vertical direction; A processing liquid supply unit for supplying a processing liquid onto the substrate, and a plate shape perpendicular to the central axis, is attached to the chamber lid so as to be rotatable about the central axis, and the chamber is sealed while forming an internal space, and a top plates for engaging with said substrate holder in the circumferential direction around the central axis, the processing liquid supply unit, said top plate and said substrate holding A state where the parts engaged, by ejecting the processing liquid from the center of the top plate includes a nozzle for supplying a processing liquid between said top plate and said substrate.

According to a second aspect of the invention, there is provided a substrate processing apparatus according to claim 1, in a state in which said top plate and the substrate holder engages, the gas between the top plate and the substrate A gas supply unit is further provided.

A third aspect of the present invention is the substrate processing apparatus according to the first or second aspect , further comprising a cup portion positioned around the chamber, wherein the chamber lid portion is moved relative to the other portion. In a state where the annular opening is formed around the substrate, the cup portion is positioned on the radially outer side of the annular opening and receives the processing liquid scattered from the rotating substrate.
According to a fourth aspect of the present invention, there is provided a substrate processing apparatus for processing a substrate, wherein a chamber forming a sealed internal space and a chamber lid including an upper portion of the chamber are relatively disposed with respect to other parts. A chamber opening / closing mechanism that moves up and down, a substrate holding unit that is disposed in the chamber and holds the substrate in a horizontal state, and a substrate rotating mechanism that rotates the substrate together with the substrate holding unit about a central axis that faces in the vertical direction; A processing liquid supply unit for supplying a processing liquid onto the substrate, and a plate shape perpendicular to the central axis, is attached to the chamber lid so as to be rotatable about the central axis, and the chamber is sealed A top plate that engages with the substrate holding portion in a circumferential direction centered on the central axis in a state of forming an internal space, and a cup portion positioned around the chamber, A treatment liquid in which the cup portion is located radially outside the annular opening and splashes from the rotating substrate in a state where the annular opening is formed around the substrate by relative movement of the lid portion with respect to the other part. Receive.

A fifth aspect of the present invention is the substrate processing apparatus according to the third or fourth aspect, wherein the top plate is attached to the chamber lid in a state where a distance between the top plate and the chamber lid can be changed. And the top plate engages with the substrate holder in the circumferential direction when the distance between the chamber lid and the other part of the chamber is a first distance, and the chamber When the distance between the lid portion and the other portion of the chamber is a second distance that is larger than the first distance, the top plate and the substrate holding portion are separated from each other.

A sixth aspect of the present invention is the substrate processing apparatus according to any one of the third to fifth aspects , wherein the cup portion is moved to a position radially outside the annular opening by raising and lowering the cup portion. And a cup elevating mechanism that moves between other positions below the position.

  A seventh aspect of the present invention is the substrate processing apparatus according to the sixth aspect, further comprising another cup portion positioned radially outside the chamber, wherein the cup portion is moved up and down by the cup lifting mechanism. Thereby, the state in which the cup part receives the processing liquid from the substrate and the state in which the other cup part receives the processing liquid from the substrate are switched.

Invention of Claim 8 is a substrate processing apparatus in any one of Claim 3 thru | or 7, Comprising: In the state which receives the process liquid which the said cup part scatters from the said board | substrate, the said upper part and the said The upper part of the chamber is close to or in contact with the upper part.

A ninth aspect of the present invention is the substrate processing apparatus according to any one of the third to eighth aspects, wherein the processing liquid supply unit supplies pure water and a chemical solution to the substrate, and the inside of the chamber In a sealed state, the chamber receives IPA or water splashing from the substrate, and in a state where the annular opening is formed, the cup portion receives a chemical solution splashing from the substrate.

  In the present invention, it is possible to prevent the liquid adhering to the inside of the chamber from dropping onto the substrate with a simple structure.

1 is a cross-sectional view of a substrate processing apparatus according to a first embodiment. It is a block diagram which shows a process liquid supply part and a liquid collection | recovery part. It is an enlarged view of a liquid receiving part vicinity. It is a figure which shows an example of operation | movement of a substrate processing apparatus. It is sectional drawing of a substrate processing apparatus. It is sectional drawing of a substrate processing apparatus. It is sectional drawing of a substrate processing apparatus. It is sectional drawing of a substrate processing apparatus. It is sectional drawing of the substrate processing apparatus which concerns on 2nd Embodiment. It is sectional drawing of a substrate processing apparatus. It is sectional drawing of a substrate processing apparatus. It is sectional drawing of a substrate processing apparatus. It is sectional drawing of a substrate processing apparatus.

  FIG. 1 is a diagram showing a configuration of a substrate processing apparatus 1 according to a first embodiment of the present invention. The substrate processing apparatus 1 is a single-wafer type apparatus that supplies a processing liquid to a substantially disk-shaped semiconductor substrate 9 (hereinafter simply referred to as “substrate 9”) to process the substrates 9 one by one.

  The substrate processing apparatus 1 includes a chamber 12, a chamber opening / closing mechanism 131, a substrate holding unit 14, a substrate rotating mechanism 15, a liquid receiving unit 16, and a cover 17.

  The chamber 12 includes a chamber body 121, a chamber lid part 122, and a top plate 123. The chamber body 121 is made of a nonmagnetic material. The chamber main body 121 includes a chamber bottom 21 and a chamber side wall 22. The chamber bottom 21 includes a substantially disc-shaped central portion 211, a cylindrical inner wall portion 212 extending downward from an outer edge portion of the central portion 211, and a base portion 213 extending radially outward from the inner wall portion 212. Is provided. When the substrate 9 is held by the substrate holding unit 14, the lower surface 92 of the substrate 9 faces the upper surface of the central portion 211. The chamber side wall portion 22 has an annular shape centering on a central axis J <b> 1 that faces in the vertical direction, and protrudes upward from the base portion 213. The member forming the chamber side wall portion 22 also serves as a part of the liquid receiving portion 16 as described later.

  The chamber lid 122 has a substantially disk shape perpendicular to the central axis J1 and includes the upper portion of the chamber 12. The chamber lid 122 closes the upper opening of the chamber body 121. FIG. 1 shows a state where the chamber lid 122 is separated from the chamber main body 121. When the chamber lid 122 closes the upper opening of the chamber main body 121, the outer edge of the chamber lid 122 contacts the upper portion of the chamber side wall 22.

  The top plate 123 has a substantially disk shape perpendicular to the central axis J1. The top plate 123 has an opening at the center. When the substrate 9 is held by the substrate holding part 14, the upper surface 91 of the substrate 9 faces the lower surface of the top plate 123. The top plate 123 is attached to the chamber lid 122 so as to hang from the chamber lid 122. More precisely, the top plate 123 is attached to the chamber lid 122 in a state in which the distance from the chamber lid 122 can be changed. The top plate 123 can also rotate around the central axis J1 with respect to the chamber lid 122.

  The chamber opening / closing mechanism 131 raises and lowers the chamber lid portion 122 that is a movable portion of the chamber 12 relative to other portions of the chamber 12. Hereinafter, the chamber opening / closing mechanism 131 is referred to as a “lid raising / lowering mechanism 131”. The chamber lid 122 is in contact with the chamber main body 121, and the chamber lid 122 is pressed toward the chamber main body 121, thereby forming an internal space 120 (see FIG. 7) sealed in the chamber 12.

  The substrate holding part 14 has an annular shape centered on the central axis J1 and holds the outer edge part of the substrate 9. The substrate holder 14 is disposed in the chamber 12 and holds the substrate 9 in a horizontal state. That is, the substrate 9 is held by the substrate holding part 14 with the upper surface 91 facing upward in the direction perpendicular to the central axis J1. Various chuck mechanisms may be used as the chuck mechanism for holding the substrate 9 by the substrate holding unit 14.

  The substrate rotation mechanism 15 is a so-called hollow motor. The substrate rotation mechanism 15 includes an annular stator portion 151 centered on the central axis J1 and an annular rotor portion 152. The rotor portion 152 includes a substantially annular permanent magnet. The surface of the permanent magnet is molded with PTFE resin. The rotor part 152 is disposed in a bottomed annular space between the inner wall part 212 and the chamber side wall part 22. The rotor unit 152 is connected to the substrate holding unit 14 via a connection member.

  The stator portion 151 is disposed outside the chamber 12 (that is, outside the internal space 120) and radially outside the rotor portion 152. In the present embodiment, the stator portion 151 is fixed to the base portion 213 and is located below the liquid receiving portion 16. Stator portion 151 includes a plurality of coils arranged in the circumferential direction about central axis J1.

  When current is supplied to the stator portion 151, a rotational force about the central axis J1 is generated between the stator portion 151 and the rotor portion 152. Thereby, the rotor part 152 rotates in a horizontal state around the central axis J1. Due to the magnetic force acting between the stator portion 151 and the rotor portion 152, the rotor portion 152 floats in the chamber 12 without contacting the chamber 12 directly or indirectly, and the substrate 9 is centered on the central axis J1. Is rotated together with the substrate holder 14.

  The liquid receiving part 16 includes a first cup part 161, a first cup lifting mechanism 162, a second cup part 163, and a second cup lifting mechanism 164. As described above, a part of the member forming the chamber side wall portion 22 is included in the liquid receiving portion 16. The second cup portion 163 has an annular shape centered on the central axis J <b> 1 and is located on the radially outer side of the chamber side wall portion 22. The first cup portion 161 is also annular and is located on the radially outer side of the second cup portion 163. The first cup lifting mechanism 162 moves the first cup portion 161 up and down. The second cup lifting mechanism 164 moves the second cup portion 163 up and down.

  The lower part of the inner peripheral part of the second cup part 163 is located in an annular second recessed part 166 located outside the chamber side wall part 22. The lower portion of the first cup portion 161 is located in an annular first recess 165 located outside the second recess 166. The member forming the first recess 165 and the second recess 166 is continuous with the member forming the chamber sidewall 22.

  An upper nozzle 181 is fixed at the center of the chamber lid 122. The upper nozzle 181 is opposed to the central opening of the top plate 123. A lower nozzle 182 is attached to the center of the center portion 211 of the chamber bottom 21. The bottom of the first recess 165 is connected to the first discharge path 191. The bottom of the second recess 166 is connected to the second discharge path 192. The bottom of the recess between the inner wall portion 212 and the chamber side wall portion 22 is connected to the third discharge path 193. Note that the installation positions of the upper nozzle 181 and the lower nozzle 182 are not necessarily limited to the central portion, and may be positions facing the peripheral edge of the substrate 9, for example.

  The cover 17 covers the upper side and the side of the chamber 12. A porous portion 171 is disposed on the upper portion of the cover 17. Downflow occurs in the cover 17 as air flows out from a large number of holes formed in the porous portion 171. This prevents particles from rising from the liquid receiver 16 or the chamber bottom 21 to the substrate 9.

  FIG. 2 is a block diagram illustrating the processing liquid supply unit 18 and the liquid recovery unit 19 included in the substrate processing apparatus 1. The processing liquid supply unit 18 includes a first processing liquid supply unit 183, a second processing liquid supply unit 184, and a third processing liquid supply unit 185 in addition to the upper nozzle 181 and the lower nozzle 182 described above. The 1st processing liquid supply part 183, the 2nd processing liquid supply part 184, and the 3rd processing liquid supply part 185 are connected to upper nozzle 181 via a valve, respectively. The lower nozzle 182 is connected to the first processing liquid supply unit 183 and the second processing liquid supply unit 184 via valves. The upper nozzle 181 is also connected to the gas supply unit 186. The upper nozzle 181 has a liquid discharge port in the center and a gas jet port around it. Therefore, to be exact, a part of the upper nozzle 181 is a part of a broad gas supply part that supplies gas to the substrate 9. The lower nozzle 182 has a liquid discharge port in the center.

  A pressurizing unit 187 that pressurizes the internal space 120 of the chamber 12 when the chamber 12 is sealed is connected to the chamber 12. Due to the pressurizing unit 187, the internal space 120 becomes a pressurized atmosphere higher than atmospheric pressure. The gas supply unit 186 may also serve as the pressurizing unit. When the pressurizing process is unnecessary, the pressurizing unit 187 may be omitted.

  The first discharge path 191 connected to the first recess 165 of the liquid receiving part 16 is connected to the waste liquid path. The second discharge path 192 connected to the second recess 166 is connected to the first recovery unit 194. The third discharge path 193 connected to the chamber bottom 21 is connected to the second recovery unit 195. The first recovery unit 194 and the second recovery unit 195 are connected to the decompression unit 196. When the decompression unit 196 is driven, the processing liquid is recovered by the first recovery unit 194 and the second recovery unit 195. Further, when the chamber 12 is sealed, the internal space 120 is decompressed by the decompression unit 196, and a decompressed atmosphere lower than the atmospheric pressure is obtained. The first recovery part 194 and the second recovery part 195 are also connected to the waste liquid path, and waste liquid is also possible from the second discharge path 192 and the third discharge path 193.

  A first processing liquid supply unit 183, a second processing liquid supply unit 184, a third processing liquid supply unit 185, a gas supply unit 186, a pressurization unit 187, a first recovery unit 194, a second recovery unit 195, a decompression unit 196, and The various valves are controlled by the control unit 10. The lid lifting mechanism 131, the substrate holding unit 14, the substrate rotating mechanism 15, the first cup lifting mechanism 162 and the second cup lifting mechanism 164 are also controlled by the control unit 10.

In the present embodiment, the first processing liquid supplied from the first processing liquid supply unit 183 is an etching liquid such as hydrofluoric acid or a tetramethylammonium hydroxide aqueous solution. The second processing liquid supplied from the second processing liquid supply unit 184 is pure water (DIW: Deionized Water). The third processing liquid supplied from the third processing liquid supply unit 185 is isopropyl alcohol (IPA). The gas supply unit 186 supplies nitrogen (N 2 ) gas into the chamber 12.

  FIG. 3 is an enlarged view of the vicinity of the liquid receiving portion 16. Two annular lip seals 231 and 232 are provided at the lower part of the outer edge of the chamber lid 122. The lip seal 231 is located above the upper end portion of the second cup portion 163. The lip seal 232 is located above the upper end of the chamber side wall 22. When the chamber lid part 122 is lowered and the second cup part 163 is raised, the lip seal 231 and the upper end part of the second cup part 163 come into contact with each other. When the chamber lid part 122 is lowered to the chamber side wall part 22, the lip seal 232 contacts the upper end part of the chamber side wall part 22.

  A recess 233 that is recessed upward and radially inward over the entire circumference is provided at the lower portion of the outer edge of the chamber lid 122 that is the upper portion of the chamber 12. When the chamber lid portion 122 is lowered and the first cup portion 161 is raised, the upper end portion of the first cup portion 161 and the concave portion 233 are in contact with each other in the vertical direction. These may only be close. When the second cup part 163 descends, the upper part of the chamber side wall part 22 comes into contact with the upper end part of the second cup part 163.

  A plurality of first engaging portions 241 are arranged in the circumferential direction on the lower surface of the outer edge portion of the top plate 123. A plurality of second engaging portions 242 are arranged on the upper surface of the substrate holding portion 14 in the circumferential direction. It is preferable that three or more sets of these engaging portions are provided, and four sets are provided in the present embodiment. A concave portion that is recessed upward is provided at the lower portion of the first engaging portion 241. The second engaging portion 242 protrudes upward from the substrate holding portion 14.

  When the chamber lid part 122 is lowered, the second engaging part 242 is fitted into the concave part of the first engaging part 241. Thereby, the top plate 123 engages with the substrate holding part 14 in the circumferential direction around the central axis J1. When the substrate holding mechanism 14 is rotated by the substrate rotating mechanism 15 in this state, the top plate 123 is also rotated. When the top plate 123 descends, the rotational position of the substrate holding part 14 is controlled so that the first engaging part 241 and the second engaging part 242 are fitted.

  Next, the flow of processing of the substrate 9 in the substrate processing apparatus 1 under the control of the control unit 10 will be described with reference to FIG. The process of FIG. 4 is merely an example, and the substrate processing apparatus 1 can perform various processes in various orders. In the substrate processing apparatus 1, first, the substrate 9 is transported and held by the substrate holding unit 14 in a state where the chamber lid portion 122 is positioned upward as shown in FIG. 1 (step S 11). The chamber lid 122 is lowered, and the top plate 123 is engaged with the substrate holder 14 as shown in FIG. The chamber lid part 122 and the chamber side wall part 22 are separated from each other, and an annular opening 81 is formed between the chamber lid part 122 and the chamber side wall part 22 around the substrate 9 (that is, radially outside).

  The second cup portion 163 rises and is located on the radially outer side of the annular opening 81. As described above, the second cup lifting mechanism 164 moves the second cup portion 163 between a position on the radially outer side of the annular opening 81 and a position below the position. The upper end portion of the second cup portion 163 is in contact with the lip seal 231. As a result, a sealed space is formed around the substrate 9 in the chamber 12, and even if particles descend from above, entry into the second cup portion 163 is prevented. Note that the upper end portion of the first cup portion 161 is also in contact with the chamber lid portion 122, and particles are prevented from entering the first cup portion 161. Hereinafter, the state of the chamber 12 in which the annular opening 81 is formed is referred to as a “semi-open state”. Further, the state of FIG. 1 is referred to as an “open state”.

  Next, the substrate rotation mechanism 15 starts high-speed rotation of the substrate holder 14 and the substrate 9. Further, the substrate 9 is heated by a heater (not shown). The first processing liquid from the first processing liquid supply unit 183 (see FIG. 2) is supplied from the upper nozzle 181 to the central portion of the upper surface 91 of the substrate 9. The first processing liquid spreads to the outer peripheral portion by the rotation of the substrate 9, and the entire upper surface 91 is covered with the first processing liquid (step S12).

  The first processing liquid is also supplied from the lower nozzle 182 to the central portion of the lower surface 92 of the substrate 9, and spreads to the outer peripheral portion by the rotation of the substrate 9. The first processing liquid splashed from the upper surface 91 and the lower surface 92 of the substrate 9 is received by the second cup portion 163 through the annular opening 81 and recovered by the second recovery portion 195. When the collected first processing liquid is reusable, impurities are removed from the first processing liquid through a filter or the like and then reused. The outer edge portion of the top plate 123 is inclined so as to slightly move downward as it goes outward in the radial direction. When the processing liquid is guided at the outer edge portion of the top plate 123, the processing liquid is appropriately received by the liquid receiving portion 16 through the annular opening 81.

  When the etching with the first processing liquid is completed, the supply of the first processing liquid is stopped, the upper nozzle 181 ejects nitrogen gas, and the first processing liquid is removed from the substrate 9 by the rotation of the substrate 9. Since the top plate 123 rotates together with the substrate holder 14, the first processing liquid hardly remains on the lower surface of the top plate 123, and the first processing liquid does not fall from the top plate 123.

  Next, the second cup portion 163 descends while the chamber 12 is in a semi-open state, and the first cup portion 161 is positioned radially outside the annular opening 81 as shown in FIG. That is, the second cup lifting mechanism 164 switches between a state in which the second cup portion 163 receives the processing liquid from the substrate 9 and a state in which the first cup portion 161 receives the processing liquid from the substrate 9. The upper end portion of the second cup portion 163 is in contact with the upper portion of the chamber side wall portion 22 so that the interior of the chamber 12 and the space inside the second cup portion 163 are separated. The upper end portion of the first cup portion 161 and the chamber lid portion 122 are in contact with each other.

  In a state where the top plate 123 and the substrate holding portion 14 are engaged, the upper nozzle 181 located at the center of the top plate 123 continuously discharges the second processing liquid that is pure water, whereby the rotating substrate 9 is rotated. The second treatment liquid is supplied to the central portion of the upper surface 91 of the first. The second processing liquid spreads to the outer peripheral portion by the rotation of the substrate 9 and scatters from the outer peripheral edge of the substrate 9 to the outside. The second processing liquid is supplied from the lower nozzle 182 to the central portion of the lower surface 92 of the substrate 9 and spreads to the outer peripheral portion by the rotation of the substrate 9. The used water, which is the second treatment liquid scattered from the substrate 9, is received by the second cup portion 163 and discarded (step S13). In rinsing the substrate 9 with the second processing liquid, the supply of the second processing liquid to the lower surface 92 is stopped halfway, and the rotation speed of the substrate 9 decreases. Thereby, the space between the top plate 123 and the substrate 9 is filled with the second processing liquid. That is, the pure water is padded on the substrate 9.

  Next, the supply of the second processing liquid is stopped, and the third processing liquid that is IPA is supplied to the upper surface 91 of the substrate 9 only from the upper nozzle 181. The space between the top plate 123 and the substrate 9 is filled with the third processing liquid, and the supply of the third processing liquid is stopped. Thereby, pure water is replaced with IPA on the substrate 9 (step S14). Thereafter, as shown in FIG. 7, the chamber lid part 122 and the first cup part 161 are lowered. The lip seal 232 of the chamber lid part 122 is in contact with the upper part of the chamber side wall part 22. As a result, the chamber 12 forms a sealed internal space 120. Since the top plate 123 can move in the vertical direction relative to the chamber lid portion 122, the engaged state between the top plate 123 and the substrate holding portion 14 is maintained. In a state where the chamber 12 is sealed, the substrate 9 and the substrate holder 14 are directly opposed to the side wall of the chamber 12, and there is no other liquid receiving portion therebetween. The chamber 12 may be sealed before step S14. In these steps S13 and S14, the space between the top plate 123 and the substrate 9 is filled with the processing liquid and processed in a liquid-tight state. However, the height of the top plate 123 is set higher than this, It is also possible to perform processing in a state where the space between the top plate 123 and the substrate 9 is not filled with the processing liquid.

  The substrate 9 rotates at high speed in the sealed space, and nitrogen gas is ejected from the upper nozzle 181 to remove the third processing liquid from the substrate 9. The third processing liquid scattered from the substrate 9 is received by the chamber side wall portion 22 and recovered by the second recovery portion 195. At this time, the internal space 120 of the chamber 12 is decompressed by the decompression unit 196, and drying of the substrate 9 is promoted (step S15). When the third treatment liquid collected by the second collection unit 195 is reused, impurities and the like are removed from the third treatment liquid. When the drying of the substrate 9 is completed, the rotation of the substrate 9 is stopped.

  The substrate 9 may be heated during drying. Further, the internal space 120 may be pressurized by the pressurizing unit 187 before decompression. Thereby, the third processing liquid can easily enter the pattern on the substrate 9.

  Thereafter, the internal space 120 is returned to normal pressure, and the chamber lid 122 is raised as shown in FIG. Since the top plate 123 rotates together with the substrate holding part 14, almost no liquid remains on the lower surface of the top plate 123, and no liquid falls from the top plate 123 when the chamber lid part 122 is raised. The substrate 9 is unloaded by an external transfer mechanism (step S16). When the chamber lid 122 is raised, a plurality of protrusions 244 provided on the chamber lid 122 are fitted into an annular groove 243 provided on the lower surface of the top of the top plate 123, so that the top of the chamber lid 122 is The plate 123 is aligned. Other structures may be adopted as the alignment structure.

  As shown in FIG. 8, a scan nozzle 188 may be added to the processing liquid supply unit 18 of the substrate processing apparatus 1. When the scan nozzle 188 is used, the chamber lid 122 is largely separated upward from the chamber body 121 and the top plate 123 is separated from the substrate holder 14. Therefore, the top plate 123 does not rotate. Thus, the top plate 123 engages with the substrate holding part 14 in the circumferential direction when the distance between the chamber lid part 122 and the other part of the chamber 12 is the first distance, and the distance is In the case of the second distance larger than the distance 1, the top plate 123 and the substrate holding part 14 are separated from each other. A scan nozzle 188 is inserted from the outside of the chamber 12 between the chamber lid 122 and the chamber body 121 and moves onto the substrate 9. The scan nozzle 188 is a two-fluid nozzle and performs, for example, pure water cleaning after the SC1 treatment. Scan nozzle 188 may be a type of nozzle other than a two-fluid nozzle. The processing liquid is supplied to the upper surface 91 of the substrate 9 while the scan nozzle 188 swings in the horizontal direction. The scan nozzle 188 may be another type of nozzle for other processing. When using a two-fluid nozzle as the scan nozzle 188, it is desirable to connect exhaust equipment (not shown) in the cover 17 so that the generated processing liquid mist can be sufficiently discharged.

  When the processing liquid from the scan nozzle 188 is discarded, the first cup portion 161 is raised and the second cup portion 163 is lowered. The outer edge portion of the substrate 9 and the first cup portion 161 face each other in the radial direction. When the processing liquid is collected and reused, the first cup portion 161 and the second cup portion 163 are raised. The outer edge portion of the substrate 9 and the second cup portion 163 face each other in the radial direction.

  As described above, in the substrate processing apparatus 1, processing performed in a state where the chamber 12 is sealed (hereinafter referred to as “sealing processing”) and processing performed in a semi-open state or an open state (hereinafter referred to as “open processing”). ")"). That is, various processes can be performed by one apparatus as compared with the prior art. In particular, the sealing process and the open process with decompression and pressurization can be performed continuously. When the scan nozzle 188 is provided, the process using the scan nozzle 188 can be performed continuously with the sealing process. In addition, since the liquid receiving part 16 is disposed outside the chamber 12, the processing liquid can be efficiently collected, and the chamber 12 can be reduced in size and volume, which is accompanied by pressurization and decompression. Processing can be performed easily and efficiently, and the amount of gas filled in the chamber 12 can be reduced. Even in the semi-open state, the periphery of the substrate 9 in the chamber 12 can be almost sealed, so that an undesired atmosphere in the cover 17 can be prevented from flowing into the chamber 12. For example, in step S12 described above, the first treatment liquid is supplied to the substrate 9 while blowing nitrogen gas from the upper nozzle 181 in the half-open state shown in FIG. Then, it is possible to remove the undesired oxygen and chemical atmosphere and perform the treatment in a low oxygen atmosphere. Such treatment in a low oxygen atmosphere is useful, for example, when it is desired to prevent oxidation of the copper wiring in the polymer removal processing of the substrate on which the copper wiring is formed.

  Since the liquid receiving part 16 is provided with the first cup part 161 and the second cup part 163, a plurality of types of processing liquids can be separated and collected. The treatment liquid at the time of the sealing treatment and the treatment liquid at the time of the open treatment can be separated and recovered. Thereby, compared with the case where a plurality of types of processing liquid is received only by the inner wall of the chamber and separated and recovered by the multiple valve, the recovery efficiency of the processing liquid can be increased, and the lifetime of the processing liquid can be extended. Furthermore, generation of particles, heat generation, smoke generation, and the like due to mixing of different kinds of processing liquids can be easily prevented.

  In the chamber 12, pure water may be supplied to the substrate 9 in a sealed state. When the chamber 12 receives the used water or IPA that is scattered from the substrate 9 in a sealed state, and the processing liquid is a chemical that gives a chemical reaction to the substrate 9, the processing liquid is received in the cup portion in a semi-open state. The dirt in 12 is reduced. As described above, by using the inner wall and each cup portion of the chamber 12 as a dedicated liquid receiving portion for a specific processing liquid, it is possible to recover the processing liquid with high purity and little loss.

  Moreover, since all the cup parts can be moved up and down, the substrate 9 can be easily handled when the substrate 9 is loaded.

  In the substrate processing apparatus 1, the top plate 123 can prevent the liquid adhering to the inside of the chamber from dropping onto the substrate with a simple structure. At the time of processing, since the top plate 123 is close to the substrate 9 in a state where the top plate 123 and the substrate holding portion 14 are engaged, the amount of processing liquid required for covering the upper surface 91 of the substrate 9 with the processing liquid is reduced. can do. The amount of gas supplied between the top plate 123 and the substrate 9 can also be reduced.

  Since the top plate 123 is movable in the vertical direction with respect to the chamber lid part 122, the top plate 123 can be rotated together with the substrate holding part 14 in a sealed state or a semi-open state. Further, by slightly raising the chamber lid portion 122 from the semi-open state, the engagement between the top plate 123 and the substrate holding portion 14 can be released. It is also possible to perform processing by discharging the processing liquid from the upper nozzle 181 in such an open state.

  In the substrate processing apparatus 1, the rotor unit 152 is disposed in the sealable internal space 120, and the stator unit 151 is disposed outside the chamber 12. Thereby, the internal space 120 having a high hermeticity can be easily formed. As a result, the single wafer processing of the substrate 9 in the sealed internal space 120 can be easily realized. Further, various structures such as the lower nozzle 182 can be easily provided on the chamber bottom 21 as compared with an apparatus in which a motor is provided below the chamber bottom.

  In the substrate rotation mechanism 15, the rotor portion 152 rotates in a floating state in the internal space 120. For this reason, it is not necessary to provide the structure which supports the rotor part 152 in the internal space 120, and size reduction of the substrate processing apparatus 1 and simplification of an apparatus structure are implement | achieved. Since dust or the like is not generated due to friction between the rotor portion 152 and the support structure, the cleanliness of the internal space 120 can be improved. Further, since the frictional resistance due to the support structure does not act on the rotor portion 152, high-speed rotation of the rotor portion 152 can be easily realized.

  9 to 13 are cross-sectional views of the substrate processing apparatus 1a according to the second embodiment. FIG. 9 shows the state of the apparatus when the substrate 9 is carried in and out. FIG. 10 shows a state in which the second cup portion 163 receives the processing liquid scattered from the substrate 9 in the semi-open state. FIG. 11 shows a state in which the first cup portion 161 receives the processing liquid scattered from the substrate 9 in the semi-open state. FIG. 12 shows a state where the sealing process is performed. FIG. 13 shows a state where processing is performed using the scan nozzle 188.

  As shown in FIG. 9, in the substrate processing apparatus 1 a, a partition plate 172 is provided on the cover 17. The partition plate 172 extends radially outward from the chamber 12. A portion continuous radially inward from the partition plate 172, that is, an inner peripheral portion of a member including the partition plate 172 protrudes downward and constitutes a part of the chamber 12. Hereinafter, this portion is referred to as “chamber fixing portion 124”. In other words, the partition plate 172 extends outward from the chamber fixing portion 124. The partition plate 172 is located above the first cup portion 161 and the second cup portion 163. The partition plate 172 prevents airflow from entering the chamber 12 in the semi-open state.

  A portion 125 including the lower portion of the chamber 12 and below the chamber fixing portion 124 is moved up and down by the chamber lifting mechanism 132. As will be described later, since the semi-open state and the sealed state are realized by the chamber lifting mechanism 132, in this embodiment, the chamber lifting mechanism 132 functions as a chamber opening / closing mechanism. Hereinafter, the part 125 is referred to as a “chamber movable part”. The chamber lid part 122 is located above the chamber fixing part 124. As in the first embodiment, the lid lifting mechanism 131 may be regarded as a chamber opening / closing mechanism.

  The position of the first cup portion 161 is fixed in a state where the upper end portion is close to the partition plate 172. The second cup portion 163 is moved up and down by the second cup lifting mechanism 164. The substrate rotation mechanism 15a is a shaft rotation type motor, and the substrate holding part 14 is plate-shaped. The rotation axis of the substrate rotation mechanism 15 a is connected to the center of the substrate holding unit 14. The lower nozzle 182 is provided at the upper end of the substrate rotation mechanism 15a. Other configurations are substantially the same as those of the first embodiment. An example of the processing operation is the same as in the first embodiment.

  An annular lip seal 234 is provided on the outer edge of the chamber lid 122. As shown in FIG. 10, in the semi-open state, the lip seal 234 of the chamber lid 122 is in contact with the partition plate 172. On the other hand, the chamber movable part 125 is separated from the partition plate 172. Thereby, an annular opening 81 is formed between the chamber movable portion 125 and the partition plate 172. The annular opening 81 is located around the substrate 9. In FIG. 10, the second cup portion 163 is located on the radially outer side of the annular opening 81. The processing liquid splashed from the rotating substrate 9 is recovered by the first recovery part 194 (see FIG. 2) via the second cup part 163, as in the first embodiment.

  In FIG. 11, the chamber 12 is in a semi-open state, and the first cup 161 is positioned on the radially outer side of the annular opening 81 as the second cup 163 descends from the state shown in FIG. 10. As described above, as in the first embodiment, the second cup lifting mechanism 164 has the second cup portion 163 between the position radially outside the annular opening 81 and the position below the position. Move with. As a result, the state in which the second cup portion 163 receives the processing liquid from the substrate 9 and the state in which the first cup portion 161 receives the processing liquid from the substrate 9 are switched. The processing liquid splashed from the substrate 9 is received by the first cup portion 161 and discarded.

  In FIG. 12, the chamber movable part 125 rises and comes into contact with the partition plate 172. As a result, a sealed internal space 120 is formed in the chamber 12. The processing liquid splashed from the substrate 9 is received by the chamber side wall portion 22 a that is the outer peripheral portion of the chamber movable portion 125, and is recovered by the second recovery portion 195.

  As shown in FIG. 13, when the scan nozzle 188 is used, the chamber lid 122 is separated from the partition plate 172, and the scan nozzle 188 is inserted between the chamber lid 122 and the partition plate 172. The chamber movable portion 125 is also separated from the partition plate 172 and an annular opening 81 is formed. The processing liquid that scatters from the rotating substrate 9 is received by a cup portion that is located radially outside the annular opening 81. In the case of FIG. 13, the first cup portion 161 is located outside the annular opening 81 in the radial direction. Of course, the second cup portion 163 may be located on the radially outer side of the annular opening 81.

  Similar to the first embodiment, in the semi-open state and the sealed state, the top plate 123 engages with the substrate holding unit 14 in the circumferential direction and rotates together with the substrate holding unit 14. Thereby, the usage-amount of a process liquid and process gas is reduced. In the case of FIG. 13, the top plate 123 does not rotate.

  As mentioned above, although embodiment of this invention has been described, this invention is not limited to the said embodiment, A various change is possible.

  In the substrate processing apparatus 1, various other processes may be performed. For example, treatment with SPM (sulfuric acid / hydrogen peroxide solution mixture) may be performed. The order and contents of processing performed in the open state, semi-open state, and sealed state can be variously changed.

  All of the processing liquid received in the cup part of the liquid receiving part 16 may be drained. Conversely, all may be recovered. The processing liquid received in the chamber 12 may be discarded or recovered. The number of cup parts may be 1 or 3 or more. A plurality of cup parts may be raised and lowered simultaneously. When no problem occurs due to some mixing of the processing liquid, each cup portion may receive a plurality of types of processing liquid. In this case, a multiple valve may be provided in the drainage path from the cup portion.

  The shapes of the upper nozzle 181 and the lower nozzle 182 are not limited to protruding shapes. Any part having a discharge port for discharging the processing liquid is included in the concept of the nozzle of the present embodiment.

  The chamber opening / closing mechanism may be a mechanism that opens / closes the chamber 12 in various modes, and may be any mechanism that raises / lowers the chamber movable portion including the upper portion or the lower portion of the chamber 12 relative to other portions. An annular opening 81 is formed around the substrate 9 by the movement of the chamber movable portion.

  Other structures may be employed for the engagement of the top plate 123 and the substrate holding portion 14 in the circumferential direction. For example, the protrusion that protrudes downward from the top plate 123 and the protrusion that protrudes upward from the substrate holding portion 14 may only contact each other in the circumferential direction.

  The structure of the substrate rotation mechanism 15 shown in FIG. 1 may be variously changed. The rotor unit 152 is not necessarily rotated in a floating state, and a structure such as a guide for mechanically supporting the rotor unit 152 is provided in the internal space 120 of the chamber 12, and the rotor unit 152 rotates along the guide. May be.

  The structure of the chamber lid 122 and the top plate 123 may be adopted in an apparatus in which the liquid receiver 16 is omitted and only the sealing process is performed.

  The substrate processed by the substrate processing apparatus 1 is not limited to a semiconductor substrate, and may be a glass substrate or another substrate.

  The configurations in the above-described embodiments and modifications may be combined as appropriate as long as they do not contradict each other.

DESCRIPTION OF SYMBOLS 1,1a Substrate processing apparatus 9 Substrate 12 Chamber 14 Substrate holding part 15, 15a Substrate rotation mechanism 18 Processing liquid supply part 81 Annular opening 120 Internal space 121 Chamber body 122 Chamber lid part 123 Top plate 131 Lid raising / lowering mechanism 161 First cup Part 163 Second cup part 164 Second cup lifting mechanism 181 Upper nozzle 186 Gas supply part J1 Central axis

Claims (9)

  1. A substrate processing apparatus for processing a substrate,
    A chamber forming a sealed interior space;
    A chamber opening / closing mechanism that raises and lowers the chamber lid including the upper portion of the chamber relative to other parts;
    A substrate holding part disposed in the chamber and holding the substrate in a horizontal state;
    A substrate rotation mechanism that rotates the substrate together with the substrate holding portion about a central axis that faces the vertical direction;
    A processing liquid supply unit for supplying a processing liquid onto the substrate;
    The plate is perpendicular to the central axis, is attached to the chamber lid so as to be rotatable around the central axis, and the chamber forms the sealed internal space, with the central axis as the center A top plate that engages with the substrate holder in a circumferential direction;
    Equipped with a,
    The processing liquid supply unit discharges the processing liquid from the center of the top plate in a state where the top plate and the substrate holding unit are engaged with each other, thereby causing the processing liquid to flow between the top plate and the substrate. A substrate processing apparatus comprising a nozzle for supply .
  2. The substrate processing apparatus according to claim 1 ,
    A substrate processing apparatus, further comprising: a gas supply unit configured to supply a gas between the top plate and the substrate in a state where the top plate and the substrate holding unit are engaged with each other.
  3. The substrate processing apparatus according to claim 1 or 2,
    A cup part located around the chamber;
    In a state where an annular opening is formed around the substrate by the relative movement of the chamber lid with respect to the other part , the cup portion is located radially outside the annular opening and scatters from the rotating substrate. A substrate processing apparatus receiving a processing liquid.
  4. A substrate processing apparatus for processing a substrate,
    A chamber forming a sealed interior space;
    A chamber opening / closing mechanism that raises and lowers the chamber lid including the upper portion of the chamber relative to other parts;
    A substrate holding part disposed in the chamber and holding the substrate in a horizontal state;
    A substrate rotation mechanism that rotates the substrate together with the substrate holding portion about a central axis that faces the vertical direction;
    A processing liquid supply unit for supplying a processing liquid onto the substrate;
    The plate is perpendicular to the central axis, is attached to the chamber lid so as to be rotatable around the central axis, and the chamber forms the sealed internal space, with the central axis as the center A top plate that engages with the substrate holder in a circumferential direction;
    A cup located around the chamber;
    Equipped with a,
    In a state where an annular opening is formed around the substrate by the relative movement of the chamber lid with respect to the other part, the cup portion is located radially outside the annular opening and scatters from the rotating substrate. A substrate processing apparatus receiving a processing liquid .
  5. The substrate processing apparatus according to claim 3 or 4, wherein
    The top plate is attached to the chamber lid in a state where the distance between the top plate and the chamber lid is changeable,
    When the distance between the chamber lid part and the other part of the chamber is a first distance, the top plate engages with the substrate holding part in the circumferential direction,
    The top plate and the substrate holding part are separated when a distance between the chamber lid part and the other part of the chamber is a second distance larger than the first distance. Substrate processing apparatus.
  6. A substrate processing apparatus according to any one of claims 3 to 5 ,
    And a cup raising / lowering mechanism for moving the cup part between a position radially outside the annular opening and another position below the position by raising and lowering the cup part, Substrate processing apparatus.
  7. The substrate processing apparatus according to claim 6,
    Further comprising another cup portion located radially outside the chamber;
    The cup part is moved up and down by the cup lifting mechanism, so that the state in which the cup part receives the processing liquid from the substrate and the state in which the other cup part receives the processing liquid from the substrate are switched. A substrate processing apparatus.
  8. A substrate processing apparatus according to any one of claims 3 to 7,
    An apparatus for processing a substrate, wherein the upper part of the cup part and the upper part of the chamber are close to or in contact with each other in a state in which the cup part receives a processing liquid scattered from the substrate.
  9. A substrate processing apparatus according to any one of claims 3 to 8,
    The processing liquid supply unit supplies pure water and chemicals to the substrate,
    With the inside of the chamber sealed, the chamber receives IPA or water splashing from the substrate,
    The substrate processing apparatus, wherein the cup portion receives a chemical solution scattered from the substrate in a state where the annular opening is formed.
JP2012191285A 2012-08-31 2012-08-31 Substrate processing equipment Active JP5978071B2 (en)

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JP2012191285A JP5978071B2 (en) 2012-08-31 2012-08-31 Substrate processing equipment
KR20130096401A KR101512560B1 (en) 2012-08-31 2013-08-14 Substrate processing apparatus
US13/969,995 US9555437B2 (en) 2012-08-31 2013-08-19 Substrate processing apparatus
TW102130564A TWI522176B (en) 2012-08-31 2013-08-27 Substrate processing apparatus
CN201310388692.7A CN103681237B (en) 2012-08-31 2013-08-30 Substrate board treatment
CN201611221241.4A CN106952844A (en) 2012-08-31 2013-08-30 Substrate board treatment
US15/383,718 US10026627B2 (en) 2012-08-31 2016-12-19 Substrate processing apparatus
US16/012,170 US20180301357A1 (en) 2012-08-31 2018-06-19 Substrate processing apparatus
US16/012,073 US20180301356A1 (en) 2012-08-31 2018-06-19 Substrate processing apparatus
US16/012,337 US20180301358A1 (en) 2012-08-31 2018-06-19 Substrate processing apparatus

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KR101512560B1 (en) 2012-08-31 2015-04-15 가부시키가이샤 스크린 홀딩스 Substrate processing apparatus
JP6010398B2 (en) * 2012-08-31 2016-10-19 株式会社Screenホールディングス Substrate processing equipment
JP6294121B2 (en) * 2014-03-26 2018-03-14 株式会社Screenホールディングス Substrate processing equipment
US9947572B2 (en) 2014-03-26 2018-04-17 SCREEN Holdings Co., Ltd. Substrate processing apparatus
JP6292934B2 (en) * 2014-03-26 2018-03-14 株式会社Screenホールディングス Substrate processing equipment
JP6230941B2 (en) * 2014-03-26 2017-11-15 株式会社Screenホールディングス Substrate processing equipment
JP6491900B2 (en) * 2015-02-12 2019-03-27 株式会社Screenホールディングス Substrate processing apparatus and substrate processing method
JP2019041052A (en) * 2017-08-28 2019-03-14 株式会社Screenホールディングス Substrate processing method and substrate processing apparatus
JP6442018B2 (en) * 2017-10-04 2018-12-19 株式会社Screenホールディングス Substrate processing method

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JP2006278955A (en) * 2005-03-30 2006-10-12 Dainippon Screen Mfg Co Ltd Method and device for substrate processing
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