JP6491900B2 - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

Info

Publication number
JP6491900B2
JP6491900B2 JP2015025718A JP2015025718A JP6491900B2 JP 6491900 B2 JP6491900 B2 JP 6491900B2 JP 2015025718 A JP2015025718 A JP 2015025718A JP 2015025718 A JP2015025718 A JP 2015025718A JP 6491900 B2 JP6491900 B2 JP 6491900B2
Authority
JP
Japan
Prior art keywords
substrate
processing liquid
liquid nozzle
position
portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015025718A
Other languages
Japanese (ja)
Other versions
JP2016149459A (en
Inventor
僚 村元
僚 村元
Original Assignee
株式会社Screenホールディングス
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社Screenホールディングス filed Critical 株式会社Screenホールディングス
Priority to JP2015025718A priority Critical patent/JP6491900B2/en
Priority claimed from TW105103499A external-priority patent/TWI661479B/en
Publication of JP2016149459A publication Critical patent/JP2016149459A/en
Application granted granted Critical
Publication of JP6491900B2 publication Critical patent/JP6491900B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Description

  The present invention relates to a technique for processing a substrate.

  Conventionally, in a manufacturing process of a semiconductor substrate (hereinafter simply referred to as “substrate”), various processes are performed on the substrate. For example, a chemical solution treatment such as etching is performed on the surface of the substrate by supplying the chemical solution onto the substrate having a resist pattern formed on the surface. In addition, after the chemical liquid processing is finished, a cleaning liquid is supplied onto the substrate to perform the cleaning processing, and then the substrate is dried.

For example, in the substrate cleaning apparatus of Patent Document 1, a lid member is placed on a spin chuck that holds a wafer horizontally and rotates together with the wafer. In the substrate cleaning process, first, a cleaning liquid is supplied onto the rotating substrate from an upper nozzle that is spaced above the lid member through an opening provided at the rotation center of the lid member. The As the cleaning liquid, hydrofluoric acid, hydrochloric acid, sulfuric acid, phosphoric acid, ammonia, hydrogen peroxide water, or the like is used. Subsequently, by supplying pure water from the upper nozzle onto the rotating substrate, the cleaning liquid adhering to the substrate is washed away. Thereafter, during the substrate drying process, nitrogen (N 2 ) gas is discharged from the upper nozzle and supplied onto the wafer through the opening of the lid member. Thereby, the oxygen concentration in the space between the lid member and the wafer can be reduced, and the drying of the substrate can be promoted.

  The lid member is made of a magnetic material such as iron. When the lid member is separated upward from the spin chuck, the lid member is attracted by the attracting member connected to the electromagnet at the tip of the arm, and the lid member moves upward together with the arm. In the substrate cleaning apparatus, the lid member can be attracted / released by turning on / off the energization to the electromagnet.

Japanese Patent No. 3621568

  By the way, in the substrate cleaning apparatus of Patent Document 1, a cleaning liquid such as hydrofluoric acid and pure water are sequentially supplied from the same nozzle. For this reason, there exists a possibility that the liquid mixture of a washing | cleaning liquid and a pure water may arise in the said nozzle.

  The present invention has been made in view of the above problems, and an object thereof is to suppress a mixture of a plurality of types of processing liquids.

The invention according to claim 1 is a substrate processing apparatus for processing a substrate, wherein the substrate holding unit that holds the substrate in a horizontal state, and the opposing surface that is opposed to the upper surface of the substrate and has a counter member opening at the center portion. A member, a counter member transport mechanism that holds the counter member, and moves the counter member relative to the substrate holding portion between a first position and a second position in a vertical direction; A first processing liquid supply unit that supplies a first processing liquid to the upper surface of the substrate via a processing liquid nozzle, and a second that supplies a second processing liquid to the upper surface of the substrate via a second processing liquid nozzle. The processing liquid supply unit, the first processing liquid nozzle, and the second processing liquid nozzle are individually moved between a supply position above the opposed member opening and a respective retracted position around the substrate holding unit. The nozzle moving mechanism and the central axis facing the vertical direction A substrate rotating mechanism that rotates the substrate together with the substrate holding unit as a core, a control unit that controls the first processing liquid supply unit, the second processing liquid supply unit, and the nozzle moving mechanism, the counter member, and the substrate A gas supply unit that supplies gas to a space between the counter member, the counter member being held by the counter member transport mechanism at the first position, and spaced upward from the substrate holder, In a state where the second processing unit is held by the substrate holding unit at a second position, is rotated together with the substrate holding unit by the substrate rotation mechanism, and is controlled by the control unit, the first processing liquid nozzle is positioned at the supply position. The first processing liquid is supplied to the substrate through the counter member opening, the first processing liquid nozzle is moved from the supply position to the retracted position, and the second processing liquid nozzle is moved to the retracted position. It is moved to et the supply position, wherein the second processing liquid through the facing member opening is supplied to the substrate, wherein the first processing liquid nozzle and the second processing liquid nozzle, at the supply position, the facing It is inserted into a through-hole provided in the counter member transport mechanism above the member opening .
A second aspect of the present invention is the substrate processing apparatus according to the first aspect, wherein the gas from the gas supply unit is supplied from the opposed member opening via the opposed member transport mechanism.
The invention according to claim 3 is a substrate processing apparatus for processing a substrate, wherein the substrate holding unit that holds the substrate in a horizontal state, and the opposing surface that is opposed to the upper surface of the substrate and is provided with a counter member opening in the center portion. A member, a counter member transport mechanism that holds the counter member, and moves the counter member relative to the substrate holding portion between a first position and a second position in a vertical direction; A first processing liquid supply unit that supplies a first processing liquid to the upper surface of the substrate via a processing liquid nozzle, and a second that supplies a second processing liquid to the upper surface of the substrate via a second processing liquid nozzle. The processing liquid supply unit, the first processing liquid nozzle, and the second processing liquid nozzle are individually moved between a supply position above the opposed member opening and a respective retracted position around the substrate holding unit. The nozzle moving mechanism and the central axis facing the vertical direction A substrate rotating mechanism that rotates the substrate together with the substrate holding unit as a core, a control unit that controls the first processing liquid supply unit, the second processing liquid supply unit, and the nozzle moving mechanism, the counter member, and the substrate A gas supply unit that supplies gas to a space between the counter member, the counter member being held by the counter member transport mechanism at the first position, and spaced upward from the substrate holder, In a state where the second processing unit is held by the substrate holding unit at a second position, is rotated together with the substrate holding unit by the substrate rotation mechanism, and is controlled by the control unit, the first processing liquid nozzle is positioned at the supply position. The first processing liquid is supplied to the substrate through the counter member opening, the first processing liquid nozzle is moved from the supply position to the retracted position, and the second processing liquid nozzle is moved to the retracted position. To the supply position, the second processing liquid is supplied to the substrate through the opening of the counter member, the counter member transport mechanism includes a counter member holding portion that holds the counter member, and the counter member And a counter member holding part moving mechanism for retracting the counter member holding part from above the counter member in a state where the counter member holding part is retracted. The treatment liquid nozzle or the second treatment liquid nozzle is located at the supply position, and the gas from the gas supply unit is supplied from the first treatment liquid nozzle or the second treatment liquid nozzle located at the supply position. .

A fourth aspect of the present invention is the substrate processing apparatus according to any one of the first to third aspects , wherein the facing member is opposed to the upper surface of the substrate, and the opening of the facing member is provided in the central portion. and a counter member body provided, the provided from the periphery of the facing member opening opposing member body and the facing cylindrical held portion held by the member conveying mechanism with projecting upward, the held portion, the A cylindrical flange connecting portion connected to the opposing member main body in the vicinity of the opposing member opening; and an opposing member flange portion extending radially outward from an upper end portion of the flange connecting portion; in contact from below to the opposing member flange portion holds the opposed member, wherein the first processing liquid nozzle and the second processing liquid nozzle, in the supply position, the upper opening of the held portion It is input.

A fifth aspect of the present invention is the substrate processing apparatus according to the fourth aspect , wherein the front end of the first processing liquid nozzle and the front end of the second processing liquid nozzle are open at the opposing member at the supply position. It is located above the lower end edge or at the same position as the lower end edge in the vertical direction.

A sixth aspect of the present invention is the substrate processing apparatus according to any one of the first to fifth aspects, further comprising a nozzle cleaning unit that cleans the first processing liquid nozzle located at the retracted position.

According to a seventh aspect of the present invention, there is provided a substrate holding portion that holds a substrate in a horizontal state, a facing member that is opposed to the upper surface of the substrate and that has a facing member opening at a central portion thereof, holds the facing member, A counter member transport mechanism for moving the counter member relative to the substrate holding portion between a first position and a second position in the vertical direction; and the upper surface of the substrate via a first processing liquid nozzle. A first processing liquid supply unit that supplies a first processing liquid to the substrate, a second processing liquid supply unit that supplies a second processing liquid to the upper surface of the substrate via a second processing liquid nozzle, and the first processing liquid. A nozzle moving mechanism for individually moving the nozzle and the second processing liquid nozzle between a supply position above the opening of the opposing member and a retreat position around the substrate holding portion; and a center facing the vertical direction Centering on the axis, the substrate and the substrate holding part A substrate processing method for processing a substrate in a substrate processing apparatus comprising: a substrate rotating mechanism that rotates in rotation; and a gas supply unit that supplies gas to a space between the counter member and the substrate, wherein the counter member includes: The substrate is held by the counter member transport mechanism at the first position, is spaced upward from the substrate holder, is held by the substrate holder at the second position, and is held by the substrate rotation mechanism. The substrate processing method includes: a) moving the counter member from the first position to the second position; and b) from the first processing liquid nozzle positioned at the supply position. Supplying the first processing liquid to the substrate through the opening of the opposing member; c) moving the first processing liquid nozzle from the supply position to the retracted position; and d) the second processing liquid. Nozzle in front A step of moving to the supply position from the retracted position, e) via the facing member opening and a step of supplying the second treatment liquid to the substrate, in the b) step and the step e), the The first processing liquid nozzle and the second processing liquid nozzle are inserted into a through-hole provided in the counter member transport mechanism above the counter member opening at the supply position .
The invention according to claim 8 holds the substrate holding portion that holds the substrate in a horizontal state, a facing member that faces the upper surface of the substrate and that has a facing member opening in the center, and holds the facing member, A counter member transport mechanism for moving the counter member relative to the substrate holding portion between a first position and a second position in the vertical direction; and the upper surface of the substrate via a first processing liquid nozzle. A first processing liquid supply unit that supplies a first processing liquid to the substrate, a second processing liquid supply unit that supplies a second processing liquid to the upper surface of the substrate via a second processing liquid nozzle, and the first processing liquid. A nozzle moving mechanism for individually moving the nozzle and the second processing liquid nozzle between a supply position above the opening of the opposing member and a retreat position around the substrate holding portion; and a center facing the vertical direction Centering on the axis, the substrate and the substrate holding part A substrate processing method for processing a substrate in a substrate processing apparatus, comprising: a substrate rotation mechanism that rotates in a substrate; and a gas supply unit that supplies gas to a space between the counter member and the substrate, wherein the counter member includes: , Held by the counter member transport mechanism at the first position, spaced upward from the substrate holder, held by the substrate holder at the second position, and the substrate by the substrate rotation mechanism. The substrate processing method rotates together with a holding unit, and the substrate processing method includes: a) moving the counter member from the first position to the second position; and b) from the first processing liquid nozzle positioned at the supply position. Supplying the first processing liquid to the substrate through the counter member opening; c) moving the first processing liquid nozzle from the supply position to the retracted position; and d) the second processing. Liquid nozzle A step of moving from the retracted position to the supply position; and e) a step of supplying the second processing liquid to the substrate through the opening of the counter member, wherein the counter member transport mechanism moves the counter member to A counter member holding portion for holding, further comprising a step of retracting the counter member holding portion from above the counter member between the step a) and the step b), and in the step b), the gas Gas from the supply unit is supplied from the first processing liquid nozzle, and in step e), gas from the gas supply unit is supplied from the second processing liquid nozzle .

A ninth aspect of the present invention is the substrate processing method according to the seventh or eighth aspect , wherein the first processing liquid nozzle located at the retracted position is provided in parallel with the step d) or the step e). The method further includes the step of washing.

  In the present invention, a mixture of a plurality of types of processing liquids can be suppressed.

1 is a plan view of a substrate processing apparatus according to a first embodiment. It is sectional drawing of a substrate processing apparatus. It is a perspective view which expands and shows the front-end | tip part vicinity of an opposing member holding | maintenance part. It is sectional drawing of a substrate processing apparatus. It is a top view of a substrate processing apparatus. It is a block diagram which shows a gas-liquid supply part. It is sectional drawing of a part of 1st process liquid nozzle. It is sectional drawing of a substrate processing apparatus. It is sectional drawing of a substrate processing apparatus. It is sectional drawing of the 1st process liquid nozzle vicinity. It is a top view of a substrate processing apparatus. It is a figure which shows the flow of a process of a board | substrate. It is a figure which shows the flow of a process of a board | substrate. It is a top view of the substrate processing apparatus concerning a 2nd embodiment. It is a top view of a substrate processing apparatus. It is a top view of the substrate processing apparatus concerning a 3rd embodiment. It is sectional drawing of a substrate processing apparatus. It is sectional drawing of a substrate processing apparatus. It is sectional drawing of the 1st process liquid nozzle vicinity. It is a top view of a substrate processing apparatus. It is a figure which shows the flow of a process of a board | substrate. It is a figure which shows the flow of a process of a board | substrate. It is a top view of the substrate processing apparatus which shows the other example of an opposing member holding part.

  FIG. 1 is a plan view showing a substrate processing apparatus 1 according to a first embodiment of the present invention. 2 is a cross-sectional view of the substrate processing apparatus 1 cut at a position II-II in FIG. The substrate processing apparatus 1 is a single-wafer type apparatus that processes semiconductor substrates 9 (hereinafter simply referred to as “substrates 9”) one by one. The substrate processing apparatus 1 is accommodated in a housing 11 that is an apparatus accommodating chamber. In FIG. 1, the housing 11 is indicated by a broken line.

  The substrate processing apparatus 1 includes a control unit 21, a substrate holding unit 31, a substrate rotating mechanism 33, a cup unit 37, a first processing liquid nozzle 411, a second processing liquid nozzle 421, a nozzle moving mechanism 43, A nozzle cleaning unit 44, a top plate 51, a counter member holding unit 53, a counter member lifting mechanism 55, and a counter member holding unit moving mechanism 57 are provided. The control unit 21 includes a substrate rotating mechanism 33, a nozzle moving mechanism 43, a nozzle cleaning unit 44, a counter member lifting / lowering mechanism 55, a counter member holding unit moving mechanism 57, and a first processing liquid supply unit 413 and a second processing liquid described later. The configuration of the supply unit 423 and the gas supply unit 45 is controlled. The illustration of the control unit 21 is omitted in FIG.

  In FIG. 1, the first processing liquid nozzle 411 and the second processing liquid nozzle 421 are separated from the top plate 51 in a plan view and are positioned at respective retraction positions around the top plate 51. In the following description, when it is not necessary to distinguish between the first processing liquid nozzle 411 and the second processing liquid nozzle 421, the first processing liquid nozzle 411 and the second processing liquid nozzle 421 are combined, or the first processing liquid nozzle One of the nozzle 411 and the second processing liquid nozzle 421 is also simply referred to as a “processing liquid nozzle”.

  The substrate holding unit 31 holds the substrate 9 in a horizontal state. The substrate holding part 31 includes a base part 311, a plurality of chucks 312, and a plurality of engaging parts 313. The base portion 311 is a substantially disk-shaped member centered on a central axis J1 that faces in the vertical direction. The substrate 9 is disposed above the base portion 311. The plurality of chucks 312 are arranged in the circumferential direction on the outer peripheral portion of the upper surface of the base portion 311 at substantially equal angular intervals about the central axis J1. In the substrate holding unit 31, the outer edge portion of the substrate 9 is held by the plurality of chucks 312. The plurality of engaging portions 313 are arranged in the circumferential direction on the outer peripheral portion of the upper surface of the base portion 311 at substantially equal angular intervals around the central axis J1. The plurality of engaging portions 313 are disposed on the radially outer side than the plurality of chucks 312. The substrate rotation mechanism 33 is disposed below the substrate holding unit 31. The substrate rotation mechanism 33 rotates the substrate 9 together with the substrate holder 31 around the central axis J1.

  The cup portion 37 is an annular member centered on the central axis J <b> 1 and is disposed on the outer side in the radial direction of the substrate 9 and the substrate holding portion 31. The cup part 37 covers the circumference | surroundings of the board | substrate 9 and the board | substrate holding part 31 over a perimeter, and receives the process liquid etc. which are scattered toward the circumference | surroundings from the board | substrate 9. A discharge port (not shown) is provided at the bottom of the cup portion 37. The processing liquid received by the cup portion 37 is discharged to the outside of the housing 11 through the discharge port. Further, the gas in the cup portion 37 is discharged to the outside of the housing 11 through the discharge port.

  The top plate 51 is a substantially circular member in plan view. The top plate 51 is a facing member that faces the upper surface 91 of the substrate 9, and is a shielding plate that shields the upper side of the substrate 9. The top plate 51 includes a counter member main body 511, a held portion 512, and a plurality of engaging portions 513. The opposing member main body 511 is a substantially disk-shaped member centering on the central axis J1. The opposing member main body 511 faces the upper surface 91 of the substrate 9. A counter member opening 514 is provided at the center of the counter member main body 511. The facing member opening 514 is, for example, substantially circular in plan view. The diameter of the counter member opening 514 is sufficiently smaller than the diameter of the substrate 9. The plurality of engaging portions 513 are arranged in the circumferential direction on the outer peripheral portion of the lower surface of the opposing member main body 511 at substantially equal angular intervals around the central axis J1.

  The held portion 512 is a cylindrical portion that protrudes upward from the periphery of the counter member opening 514 of the counter member main body 511. The held portion 512 includes a flange connection portion 515 and an opposing member flange portion 516. The flange connection portion 515 has a substantially cylindrical shape centered on the central axis J1. The flange connection portion 515 is connected to the opposing member main body 511 in the vicinity of the edge of the opposing member opening 514. The opposing member flange portion 516 extends radially outward from the upper end portion of the flange connection portion 515. The opposing member flange portion 516 has, for example, a substantially annular plate shape centered on the central axis J1.

  The facing member holding portion 53 holds the held portion 512 of the top plate 51. The facing member holding portion 53 includes a holding portion main body 531, a first flange support portion 532, a first connection portion 533, a second flange support portion 534, and a second connection portion 535. The holding part main body 531 is a rod-like arm extending substantially horizontally. A base portion of the holding portion main body 531 (that is, an end portion on the right side in FIG. 2) is connected to the opposing member lifting mechanism 55 and the opposing member holding portion moving mechanism 57. In the substrate processing apparatus 1, the counter member holding unit 53, the counter member lifting mechanism 55, and the counter member holding unit moving mechanism 57 constitute a counter member transport mechanism that transports the top plate 51. The opposing member transport mechanism may include other configurations.

  Inside the holding part main body 531, a holding part internal space 536 is provided over substantially the entire length of the holding part main body 531. An opening 537 a communicating with the holding portion internal space 536 is provided on the lower surface of the distal end portion of the holding portion main body 531. The opening 537 a is provided above the held portion 512 of the top plate 51.

  The first flange support portion 532, the first connection portion 533, the second flange support portion 534, and the second connection portion 535 are attached to the distal end portion of the holding portion main body 531. The first flange support portion 532 and the first connection portion 533 are located near the tip of the holding portion main body 531, and the second flange support portion 534 and the second connection portion 535 are the first flange support portion 532 and the first connection portion, respectively. It is arranged between 533 and the base of the holding part main body 531. The second flange support part 534 is located on the opposite side of the first flange support part 532 across the flange connection part 515 of the top plate 51.

  FIG. 3 is an enlarged perspective view showing the vicinity of the distal end portion of the facing member holding portion 53. In FIG. 3, the holding unit main body 531 and the counter member main body 511 are not shown. As shown in FIGS. 1 to 3, each of the first connection portion 533 and the second connection portion 535 is a substantially flat portion that extends downward from the lower surface of the holding portion main body 531. Each of the first connection portion 533 and the second connection portion 535 extends in a direction substantially perpendicular to the longitudinal direction of the holding portion main body 531. The first flange support portion 532 is a substantially flat portion that extends substantially horizontally from the lower end portion of the first connection portion 533. The first flange support portion 532 extends from the first connection portion 533 to the base side of the holding portion main body 531. The second flange support part 534 is a substantially flat plate-like part that extends substantially horizontally from the lower end part of the second connection part 535. The second flange support portion 534 extends from the second connection portion 535 to the distal end side of the holding portion main body 531.

  The distance between the first flange support portion 532 and the second flange support portion 534 in the longitudinal direction of the holding portion main body 531 is smaller than the outer diameter of the opposing member flange portion 516 of the top plate 51 and the flange connection portion 515. It is larger than the outer diameter. The distance between the first connection part 533 and the second connection part 535 in the longitudinal direction of the holding part main body 531 is larger than the outer diameter of the opposing member flange part 516. As shown in FIGS. 1 and 2, the opening 537 a is located between the first connection portion 533 and the second connection portion 535 in the longitudinal direction of the holding portion main body 531.

  In the example illustrated in FIG. 1, the first flange support portion 532 and the second flange support portion 534 are fixed to the holding portion main body 531 via the first connection portion 533 and the second connection portion 535. In other words, the first flange support portion 532 and the second flange support portion 534 are non-movable portions in the facing member holding portion 53, and the first flange support portion 532 and the second flange support portion 534 with respect to the holding portion main body 531. The relative position does not change.

  In the state where the top plate 51 is located at the position shown in FIG. 2, the first flange support portion 532 and the second flange support portion 534 are supported by contacting a part of the opposing member flange portion 516 of the top plate 51 from below. To do. As a result, the top plate 51 is suspended by the counter member holding portion 53 above the substrate 9 and the substrate holding portion 31. In the following description, the vertical position of the top plate 51 shown in FIG. 2 is referred to as “first position”. The top plate 51 is held by the facing member holding portion 53 at a first position and is separated upward from the substrate holding portion 31.

  The first flange support portion 532 and the second flange support portion 534 are provided with a movement restriction portion (not shown) that restricts displacement of the top plate 51 (that is, movement and rotation of the top plate 51). The movement restricting portion includes, for example, a protruding portion that protrudes upward from the upper surfaces of the first flange supporting portion 532 and the second flange supporting portion 534, and a through hole that is provided in the opposing member flange portion 516 and into which the protruding portion is inserted. including. Alternatively, the movement restricting portion includes, for example, a protruding portion that protrudes upward from the upper surfaces of the first flange support portion 532 and the second flange support portion 534 and contacts the outer edge of the opposing member flange portion 516. The same applies to the substrate processing apparatus 1a described later.

  The counter member lifting mechanism 55 moves the top plate 51 in the vertical direction together with the counter member holding portion 53. 4 is a cross-sectional view showing a state in which the top plate 51 is lowered from the first position shown in FIG. In the following description, the vertical position of the top plate 51 shown in FIG. 4 is referred to as a “second position”. That is, the opposing member lifting mechanism 55 moves the top plate 51 in the up and down direction between the first position and the second position. The second position is a position below the first position. In other words, the second position is a position where the top plate 51 is closer to the substrate holding portion 31 in the vertical direction than the first position.

  In a state where the top plate 51 is located at the second position, the plurality of engaging portions 513 of the top plate 51 are engaged with the plurality of engaging portions 313 of the substrate holding portion 31, respectively. The plurality of engaging portions 513 are supported from below by the plurality of engaging portions 313. For example, the engaging portion 313 is a pin that is substantially parallel to the vertical direction, and the upper end portion of the engaging portion 313 is fitted into a recess formed upward at the lower end portion of the engaging portion 513. Further, the opposing member flange portion 516 of the top plate 51 is spaced upward from the first flange support portion 532 and the second flange support portion 534 of the opposing member holding portion 53. As a result, the top plate 51 is held by the substrate holding part 31 and is separated from the opposing member holding part 53 at the second position (that is, is not in contact with the opposing member holding part 53). When the substrate rotation mechanism 33 is driven with the top plate 51 positioned at the second position, the top plate 51 rotates together with the substrate holding unit 31.

  The opposing member holding portion 53 is in a state where the top plate 51 is located at the second position, that is, in a state where the opposing member flange portion 516 is spaced upward from the first flange support portion 532 and the second flange support portion 534. It becomes possible to move horizontally. The opposing member holding part moving mechanism 57 horizontally moves the opposing member holding part 53 in a state where horizontal movement is possible. In the example illustrated in FIG. 1, the opposing member holding unit 53 is moved in a state where the first processing liquid nozzle 411 and the second processing liquid nozzle 421 are located at the respective retracted positions. When the opposing member holding part moving mechanism 57 rotates the holding part main body 531 horizontally, the opposing member holding part 53 moves horizontally.

  As shown in FIGS. 1 and 2, the nozzle moving mechanism 43 includes a first nozzle lifting mechanism 431, a first nozzle rotating mechanism 432, a second nozzle lifting mechanism 433, and a second nozzle rotating mechanism 434. The first treatment liquid nozzle 411 is connected to the tip of a first arm 412 extending in the horizontal direction from the first nozzle lifting mechanism 431 and the first nozzle rotating mechanism 432. The first nozzle lifting mechanism 431 moves the first processing liquid nozzle 411 in the vertical direction together with the first arm 412. The first nozzle rotating mechanism 432 rotates the first processing liquid nozzle 411 together with the first arm 412 horizontally.

  As shown in FIG. 1, the second processing liquid nozzle 421 is connected to the distal end portion of the second arm 422 extending in the horizontal direction from the second nozzle lifting mechanism 433 and the second nozzle rotating mechanism 434. The second nozzle lifting mechanism 433 moves the second processing liquid nozzle 421 in the vertical direction together with the second arm 422. The second nozzle rotating mechanism 434 rotates the second processing liquid nozzle 421 together with the second arm 422 horizontally.

  FIG. 5 is a plan view showing the substrate processing apparatus 1. The opposing member holding portion 53 is moved by the opposing member holding portion moving mechanism 57 to a position above the top plate 51 as shown in FIG. 1 and a position around the top plate 51 as shown in FIG. Move to a position that avoids the top of). In the following description, the position of the opposing member holding portion 53 shown in FIG. 1 in plan view is referred to as “holding position”. Further, the position of the facing member holding portion 53 shown in FIG.

  In the substrate processing apparatus 1, the first flange support portion 532 and the second flange support portion 534 are moved by the rotation of the holding portion main body 531 by the facing member holding portion moving mechanism 57 in a state where the top plate 51 is located at the second position. Move horizontally. As a result, the first flange support portion 532 and the second flange support portion 534 of the facing member holding portion 53 located at the holding position are retracted away from the facing member flange portion 516 and the flange connecting portion 515 outward in the radial direction. Move to position. Further, the first flange support portion 532 and the second flange support portion 534 of the facing member holding portion 53 located at the retracted position move to the holding position and are disposed below the facing member flange portion 516.

  FIG. 6 is a block diagram showing the gas-liquid supply unit 4 related to the supply of gas and processing liquid in the substrate processing apparatus 1. The gas-liquid supply unit 4 includes a first processing liquid nozzle 411, a second processing liquid nozzle 421, a first processing liquid supply unit 413, a second processing liquid supply unit 423, and a gas supply unit 45. The first processing liquid supply unit 413 is connected to the first processing liquid nozzle 411. As will be described later, the first processing liquid supply unit 413 is arranged on the upper surface 91 of the substrate 9 via the first processing liquid nozzle 411 with the first processing liquid nozzle 411 positioned above the substrate 9. Supply. The second processing liquid supply unit 423 is connected to the second processing liquid nozzle 421. As will be described later, the second processing liquid supply unit 423 is arranged on the upper surface 91 of the substrate 9 via the second processing liquid nozzle 421 with the second processing liquid nozzle 421 positioned above the substrate 9. Supply. The gas supply unit 45 is connected to the counter member holding unit 53 and supplies gas to the holding unit internal space 536 of the counter member holding unit 53. The gas supply unit 45 is also connected to the first processing liquid nozzle 411 and the second processing liquid nozzle 421 and supplies gas to the first processing liquid nozzle 411 and the second processing liquid nozzle 421.

In the substrate processing apparatus 1, various types of liquids are used as the first processing liquid and the second processing liquid. Each of the first processing liquid and the second processing liquid may be, for example, a chemical liquid (for example, a polymer removal liquid, an etching liquid such as hydrofluoric acid or an aqueous tetramethylammonium hydroxide solution) used for the chemical liquid processing of the substrate 9. Each of the first processing liquid and the second processing liquid may be a cleaning liquid such as pure water (DIW: deionized water) or carbonated water used for the cleaning process of the substrate 9. Each of the first processing liquid and the second processing liquid may be, for example, isopropyl alcohol (IPA) supplied to replace the liquid on the substrate 9. The first treatment liquid and the second treatment liquid are preferably different types of liquid. The gas supplied from the gas supply unit 45 is, for example, an inert gas such as nitrogen (N 2 ) gas. Various gases other than the inert gas may be supplied from the gas supply unit 45.

  FIG. 7 is an enlarged cross-sectional view showing a part of the first treatment liquid nozzle 411. The first treatment liquid nozzle 411 is formed of, for example, PFA (tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer). A treatment liquid channel 416 and two gas channels 417 are provided inside the first treatment liquid nozzle 411. The processing liquid channel 416 is connected to the first processing liquid supply unit 413 shown in FIG. The two gas flow paths 417 are connected to the gas supply unit 45 shown in FIG.

  The first processing liquid supplied from the first processing liquid supply unit 413 to the processing liquid channel 416 is discharged downward from a discharge port 416 a provided on the lower end surface of the first processing liquid nozzle 411. The inert gas supplied from the gas supply unit 45 to the central gas flow path 417 (the right-side gas flow path 417 in the figure) flows downward from the lower surface injection port 417a provided at the lower end surface of the first treatment liquid nozzle 411. (For example, injection). The inert gas supplied from the gas supply unit 45 to the gas flow path 417 in the outer peripheral portion is supplied to the periphery from a plurality of side surface injection ports 417b, 417c, and 417d provided on the outer surface of the first processing liquid nozzle 411. .

  The plurality of side surface injection ports 417b are arranged at substantially equal angular intervals in the circumferential direction. The plurality of side surface injection ports 417b are connected to a circumferential flow channel extending in the circumferential direction from the lower end portion of the gas flow channel 417 at the outer circumferential portion. The plurality of side surface injection ports 417c are arranged at substantially equal angular intervals in the circumferential direction above the plurality of side surface injection ports 417b. The plurality of side surface injection ports 417c are connected to a circumferential channel extending from the gas channel 417 in the circumferential direction. The plurality of side surface injection ports 417d are arranged at substantially equal angular intervals in the circumferential direction above the plurality of side surface injection ports 417c. The plurality of side surface injection ports 417d are connected to a circumferential channel extending from the gas channel 417 in the circumferential direction. In the first treatment liquid nozzle 411, another gas flow path 417 may be provided, and the side injection port 417c and the side injection port 417d may be connected to the other gas flow path 417.

  The inert gas supplied from the gas supply unit 45 (see FIG. 6) is supplied (for example, injected) obliquely downward from the plurality of side surface injection ports 417b, and obliquely upward from the plurality of side surface injection ports 417c. Is supplied (for example, injected). Further, the inert gas supplied from the gas supply unit 45 is supplied (for example, injected) approximately horizontally from the plurality of side surface injection ports 417d.

  Only one side injection port 417b, 417c, and 417d may be provided. The structure of the second treatment liquid nozzle 421 is the same as the structure of the first treatment liquid nozzle 411 shown in FIG. In the second processing liquid nozzle 421, the second processing liquid is discharged from the discharge port provided on the lower end surface.

  FIG. 8 is a cross-sectional view showing the substrate processing apparatus 1. FIG. 8 shows a state in which the top plate 51 is held by the substrate holding unit 31 at the second position. Further, the facing member holding portion 53 is retracted from the holding position to the retracted position by the facing member holding portion moving mechanism 57. As shown in FIGS. 5 and 8, the first processing liquid nozzle 411 is moved from the retreat position by the first nozzle lifting mechanism 431 and the first nozzle rotation mechanism 432 in a state where the facing member holding portion 53 is retreated, and the top The plate 51 is inserted into the held portion 512 through the upper opening 517 of the held portion 512. The first treatment liquid nozzle 411 is located inside the held portion 512. In other words, the outer surface of the first processing liquid nozzle 411 faces the inner surface of the held portion 512 in the radial direction. In the following description, the position of the first processing liquid nozzle 411 shown in FIG. 8 is referred to as “supply position” (the same applies to the second processing liquid nozzle 421). In the example shown in FIG. 8, the front end (that is, the lower end) of the first processing liquid nozzle 411 located at the supply position is located above the lower end edge of the opposing member opening 514 of the opposing member main body 511. The tip of the first treatment liquid nozzle 411 may be located at the same position as the lower end edge of the opposing member opening 514 in the vertical direction.

  The first processing liquid supplied from the first processing liquid supply unit 413 (see FIG. 6) passes from the discharge port 416a (see FIG. 7) of the first processing liquid nozzle 411 to the upper surface of the substrate 9 through the counter member opening 514. It discharges toward 91. Further, a part of the inert gas supplied from the gas supply unit 45 (see FIG. 6) is supplied from the lower surface injection port 417a (see FIG. 7) of the first processing liquid nozzle 411 through the counter member opening 514 to the top plate. 51 is supplied to a space 90 between the substrate 51 and the substrate 9 (hereinafter referred to as a “processing space 90”).

  In the substrate processing apparatus 1, as illustrated in FIG. 9, the first processing liquid nozzle 411 may protrude downward from the opposing member opening 514 of the opposing member main body 511. In other words, the tip of the first processing liquid nozzle 411 is positioned below the lower end edge of the facing member opening 514. Part of the inert gas supplied from the gas supply unit 45 flows downward through the counter member opening 514 in the first processing liquid nozzle 411, and the processing space from the lower surface injection port 417 a of the first processing liquid nozzle 411. 90. The first processing liquid supplied from the first processing liquid supply unit 413 flows downward through the counter member opening 514 in the first processing liquid nozzle 411, and is discharged from the discharge port 416 a of the first processing liquid nozzle 411 to the substrate 9. The liquid is discharged toward the upper surface 91. In the following description, when the first processing liquid is supplied through the counter member opening 514, the first processing liquid discharged from the first processing liquid nozzle 411 above the counter member opening 514 is the counter member opening. 9 includes not only the state of passing through 514 but also the state of discharging the first processing liquid through the first processing liquid nozzle 411 inserted into the facing member opening 514 as shown in FIG. The same applies to the second processing liquid nozzle 421 and the second processing liquid described later.

  FIG. 10 is an enlarged cross-sectional view showing the first processing liquid nozzle 411 and its vicinity in FIG. In FIG. 10, the top plate 51 is located at the second position. The first treatment liquid nozzle 411 includes a nozzle body 415 and a nozzle flange portion 414. The nozzle body 415 has a substantially cylindrical shape and is inserted into the flange connection portion 515 of the held portion 512. The nozzle flange portion 414 is connected to the upper end portion of the nozzle body 415. The nozzle flange portion 414 is a substantially disk-shaped portion that extends radially outward from the upper portion of the nozzle body 415. The nozzle flange portion 414 faces the upper surface of the facing member flange portion 516.

  In the example shown in FIG. 10, the labyrinth 54 is formed between the upper surface of the facing member flange portion 516 and the lower surface of the nozzle flange portion 414. Specifically, a first protrusion 541 that protrudes upward from the upper surface of the opposing member flange 516 and two second protrusions that protrude downward from the lower surface of the nozzle flange 414 of the first processing liquid nozzle 411 located at the supply position. The labyrinth 54 is formed over the entire circumference in the circumferential direction by the protruding portion 543. The first protrusion 541 and the two second protrusions 543 have a substantially cylindrical shape centered on the central axis J1, and the diameters thereof are different from each other. The diameter of the first protrusion 541 is larger than the diameter of the inner second protrusion 543 and smaller than the diameter of the outer second protrusion 543. The upper ends of the first protrusions 541 are located above the lower ends of the two second protrusions 543. When the top plate 51 located at the second position rotates together with the substrate holding portion 31, the two second protrusions 543 do not rotate, and the first protrusion 541 is between the two second protrusions 543. Rotate.

  In a state where the first treatment liquid nozzle 411 is located at the supply position, the side injection ports 417b and 417c face the inner side surface of the flange connection portion 515 in the radial direction. Part of the inert gas supplied from the gas supply unit 45 to the first processing liquid nozzle 411 is retained from the plurality of side surface injection ports 417b and the plurality of side surface injection ports 417c on the outer surface of the first processing liquid nozzle 411. Supplied to the gap 518 between the inner surface of the part 512 and the outer surface of the first treatment liquid nozzle 411. In the gap 518, the inert gas from the gas supply unit 45 is supplied obliquely downward and obliquely upward from the outer surface of the first processing liquid nozzle 411. The inert gas supplied obliquely downward from the side injection port 417 b flows downward through the gap 518 and is supplied to the processing space 90. The inert gas supplied obliquely upward from the side injection port 417 c flows upward through the gap 518 and reaches the upper opening 517 of the held portion 512.

  Further, each side injection port 417d faces the labyrinth 54 in the radial direction above the opposing member flange portion 516. A part of the inert gas supplied from the gas supply unit 45 to the first processing liquid nozzle 411 is supplied approximately horizontally toward the labyrinth 54 from the plurality of side surface injection ports 417d on the outer surface of the first processing liquid nozzle 411. Is done. The inert gas supplied horizontally from the side injection port 417d flows to the outer side in the circumferential direction of the labyrinth 54 through the labyrinth 54 together with the inert gas supplied from the side injection port 417c to the upper opening 517. The same applies to the state in which the second treatment liquid nozzle 421 is located at the supply position.

  FIG. 11 is a plan view showing the substrate processing apparatus 1. In FIG. 11, the first processing liquid nozzle 411 is moved from the supply position above the top plate 51 shown in FIG. 5 by the first nozzle lifting mechanism 431 and the first nozzle rotating mechanism 432, and as shown in FIG. It is located at a retracted position around the top plate 51 that is spaced from the top of the top plate 51. Further, the second processing liquid nozzle 421 is moved from the retreat position around the top plate 51 shown in FIG. 5 by the second nozzle lifting mechanism 433 and the second nozzle rotating mechanism 434, and as shown in FIG. 51 is located in the supply position above 51. The retreat position of the first treatment liquid nozzle 411 and the second treatment liquid nozzle 421 is a space having an extent that allows the first treatment liquid nozzle 411 and the second treatment liquid nozzle 421 to swing at the retraction position ( In other words, it is a concept including a retreat space.

  Similar to the first processing liquid nozzle 411 shown in FIG. 10, the second processing liquid nozzle 421 is inserted into the held portion 512 from the upper opening 517 of the held portion 512 of the top plate 51 at the supply position described above. The Further, the tip (that is, the lower end) of the second processing liquid nozzle 421 is similar to the first processing liquid nozzle 411 shown in FIG. 10 at the supply position described above from the lower end edge of the opposing member opening 514 of the opposing member main body 511. Is also located above. The tip of the second treatment liquid nozzle 421 may be located at the same position as the lower edge of the facing member opening 514 in the vertical direction.

  The supply positions of the first treatment liquid nozzle 411 and the second treatment liquid nozzle 421 shown in FIGS. 5 and 11 are, specifically, positions above the facing member opening 514 of the top plate 51. The retreat positions of the first treatment liquid nozzle 411 and the second treatment liquid nozzle 421 are positions around the substrate holding unit 31. The nozzle moving mechanism 43 individually moves the first processing liquid nozzle 411 and the second processing liquid nozzle 421 between the supply position and the respective retracted positions.

  As shown in FIG. 11, the nozzle cleaning unit 44 includes a first cleaning unit 441 and a second cleaning unit 442. The first cleaning unit 441 is provided in the vicinity of the retracted position of the first processing liquid nozzle 411. The first cleaning unit 441 cleans the first processing liquid nozzle 411 located at the retracted position. For example, the first cleaning unit 441 cleans the first processing liquid nozzle 411 by supplying a cleaning liquid such as pure water toward the first processing liquid nozzle 411. The second cleaning unit 442 is provided in the vicinity of the retreat position of the second processing liquid nozzle 421. The 2nd washing | cleaning part 442 wash | cleans the 2nd process liquid nozzle 421 located in the retracted position shown in FIG. For example, the second cleaning unit 442 cleans the second processing liquid nozzle 421 by supplying a cleaning liquid such as pure water toward the second processing liquid nozzle 421. In the first cleaning unit 441 and the second cleaning unit 442, for example, the first processing liquid nozzle 411 and the second processing liquid nozzle 421 after the cleaning are also dried. When cleaning and drying the first treatment liquid nozzle 411 and the second treatment liquid nozzle 421, the first treatment liquid nozzle 411 and the second treatment liquid nozzle 421 are swung at the retreat position (that is, the retreat space). Also good.

  Next, an example of the processing flow of the substrate 9 in the substrate processing apparatus 1 will be described with reference to FIGS. 12A and 12B. First, in a state where the top plate 51 is located at the first position shown in FIG. 2, the substrate 9 is carried into the housing 11 and held by the substrate holding part 31 (step S11). At this time, the top plate 51 is held by the facing member holding portion 53, and the first processing liquid nozzle 411 and the second processing liquid nozzle 421 are located at the respective retreat positions.

  Subsequently, the opposed member lifting mechanism 55 is controlled by the control unit 21 (see FIG. 1), so that the opposed member holding unit 53 moves downward. As a result, the top plate 51 moves downward from the first position to the second position, and the top plate 51 is held by the substrate holding portion 31 as shown in FIG. 4 (step S12). The inert gas supplied from the gas supply unit 45 to the holding portion internal space 536 of the facing member holding portion 53 flows downward through the upper opening 517 of the held portion 512 and passes through the facing member opening 514 to the processing space. 90.

  In step S <b> 12, the first flange support portion 532 and the second flange support portion 534 of the facing member holding portion 53 are spaced downward from the facing member flange portion 516 of the top plate 51. In this state, the opposed member holding unit moving mechanism 57 is controlled by the control unit 21, whereby the opposed member holding unit 53 rotates horizontally. Thereby, the opposing member holding | maintenance part 53 retracts | saves from the holding position above the top plate 51, and moves to the above-mentioned retracted position (step S13).

  Next, the first processing liquid nozzle 411 is moved to the retracted position by the control unit 21 controlling the first nozzle raising / lowering mechanism 431 and the first nozzle rotating mechanism 432 in a state where the facing member holding unit 53 is retracted to the retracted position. To the supply position (step S14). As shown in FIGS. 8 and 10, the first processing liquid nozzle 411 is inserted from the upper opening 517 of the held portion 512 of the top plate 51 and is located inside the held portion 512.

  When the first processing liquid nozzle 411 is located at the supply position, the control unit 21 controls the gas supply unit 45 so that the inert gas is supplied to the processing space 90 from the lower surface injection port 417a of the first processing liquid nozzle 411. The Further, the inert gas is supplied to the gap 518 between the inner side surface of the held portion 512 of the top plate 51 and the outer side surface of the first processing liquid nozzle 411 from the side surface injection ports 417 b and 417 c of the first processing liquid nozzle 411. Is done. Further, an inert gas is supplied from the side injection port 417 d of the first processing liquid nozzle 411 toward the labyrinth 54 between the upper surface of the opposing member flange portion 516 and the lower surface of the nozzle flange portion 414.

  Further, when the substrate rotating mechanism 33 is controlled by the control unit 21, the rotation of the substrate holding unit 31, the substrate 9 and the top plate 51 is started (step S15). The supply of the inert gas from the first treatment liquid nozzle 411 is continued after step S15. The rotation start of the top plate 51 and the like (step S15) may be performed before the movement of the first processing liquid nozzle 411 to the supply position (step S14). For example, step S15 may be performed between step S12 and step S13. In this case, in step S13, the facing member holding portion 53 moves away from the rotating top plate 51 to the retracted position.

  Then, the first processing liquid is supplied from the first processing liquid nozzle 411 to the supply position by the first processing liquid supply unit 413 and the first processing liquid nozzle 411 is positioned at the second position from the first processing liquid nozzle 411. It is supplied to the central portion of the upper surface 91 of the rotating substrate 9 through the counter member opening 514 (step S16). The first processing liquid supplied to the central portion of the substrate 9 from the first processing liquid nozzle 411 positioned at the supply position spreads radially outward from the central portion of the substrate 9 due to the rotation of the substrate 9. It is applied to the entire top surface 91. The first processing liquid scatters radially outward from the outer edge of the substrate 9 and is received by the cup portion 37. By applying the first processing liquid for a predetermined time, the processing of the substrate 9 with the first processing liquid is completed.

  The first processing liquid is, for example, a chemical liquid such as a polymer removing liquid or an etching liquid, and the chemical liquid processing is performed on the substrate 9 in step S16. Note that the supply of the first processing liquid (step S16) may be performed before the start of rotation of the substrate 9 (step S15). In this case, the first processing liquid is padded (filled) on the entire upper surface 91 of the substrate 9 in a stationary state, and the paddle processing with the first processing liquid is performed. The same applies to steps S54 and S55 described later.

  When the processing of the substrate 9 with the first processing liquid is completed, the supply of the first processing liquid from the first processing liquid nozzle 411 is stopped. Then, the first processing liquid nozzle 411 is moved from the supply position to the retracted position by the first nozzle lifting mechanism 431 and the first nozzle rotating mechanism 432 (step S17).

  In the substrate processing apparatus 1, the second processing liquid nozzle 421 moves from the retracted position to the supply position by controlling the second nozzle lifting mechanism 433 and the second nozzle rotating mechanism 434 by the control unit 21 (step S18). . As shown in FIG. 11, the second processing liquid nozzle 421 is inserted from the upper opening 517 of the held portion 512 of the top plate 51 in a state where the facing member holding portion 53 is retracted to the retracted position. Located inside. The movement of the second processing liquid nozzle 421 (step S18) is preferably performed in parallel with the movement of the first processing liquid nozzle 411 (step S17). Note that step S18 may be performed after step S17 is completed.

  When the second processing liquid nozzle 421 is located at the supply position, the inert gas from the gas supply unit 45 is supplied to the processing space 90 from the lower surface injection port of the second processing liquid nozzle 421. Further, the inert gas is supplied to the gap 518 and the labyrinth 54 from the side injection port on the outer side surface of the second processing liquid nozzle 421.

  Subsequently, when the second processing liquid supply unit 423 is controlled by the control unit 21, the second processing liquid is supplied from the second processing liquid nozzle 421 to the second processing liquid nozzle 421 in the state where the second processing liquid nozzle 421 is located at the supply position. It is supplied to the central portion of the upper surface 91 of the rotating substrate 9 through the counter member opening 514 of the top plate 51 located at the position 2 (step S19). The second processing liquid supplied to the central portion of the substrate 9 from the second processing liquid nozzle 421 located at the supply position spreads radially outward from the central portion of the substrate 9 due to the rotation of the substrate 9. It is applied to the entire top surface 91. The second processing liquid scatters radially outward from the outer edge of the substrate 9 and is received by the cup portion 37. By applying the second processing liquid for a predetermined time, the processing of the substrate 9 by the second processing liquid is completed. The second processing liquid is, for example, a cleaning liquid such as pure water or carbonated water, and the cleaning process for the substrate 9 is performed in step S19.

  In the substrate processing apparatus 1, in parallel with the movement of the second processing liquid nozzle 421 (step S18) or the supply of the second processing liquid (step S19), the first cleaning liquid 441 is positioned at the retracted position by the first cleaning unit 441. The nozzle 411 is cleaned (step S20).

  When the processing of the substrate 9 with the second processing liquid is completed, the supply of the second processing liquid from the second processing liquid nozzle 421 is stopped. The rotation of the substrate 9 is maintained, and the substrate 9 is dried. The rotation speed of the substrate 9 during the drying process is faster than the rotation speed when the substrate 9 is processed with the second processing liquid in step S19. Further, the second processing liquid nozzle 421 is moved from the supply position to the retracted position by the second nozzle lifting mechanism 433 and the second nozzle rotating mechanism 434 (step S21). Then, the second cleaning liquid nozzle 421 located at the retreat position is cleaned by the second cleaning unit 442 (step S22).

  Further, the facing member holding portion moving mechanism 57 rotates the facing member holding portion 53 horizontally and moves from the retracted position to the holding position (step S23). At this time, the first flange support portion 532 and the second flange support portion 534 of the facing member holding portion 53 are spaced downward from the facing member flange portion 516 of the top plate 51 that is rotating at the second position.

  Subsequently, the rotation of the substrate holding unit 31, the substrate 9, and the top plate 51 by the substrate rotation mechanism 33 is stopped (step S24). Next, the counter member holding portion 53 is moved upward by the counter member lifting mechanism 55, whereby the top plate 51 is moved upward from the second position to the first position (step S25). The top plate 51 is spaced upward from the substrate holding part 31 and held by the counter member holding part 53. Thereafter, the substrate 9 is unloaded from the housing 11 (step S26).

  Steps S23 to S26 may be performed after step S22 is completed. Alternatively, step S22 may be performed in parallel with any one or more of steps S23 to S26. Step S20 may also be performed in parallel with step S22, for example. Step S23 should just be performed after step S21 and before step S25. For example, step S23 may be performed after step S24, that is, after rotation of the top plate 51 or the like is stopped.

  As described above, the processing of the substrate 9 by the first processing liquid and the second processing liquid is performed when the top plate 51 is positioned at the second position, and the top plate 51 is loaded and unloaded by the top plate 51. It is performed when it is located at the position. Therefore, the first position and the second position can be regarded as a “non-processing position” and a “processing position”, respectively.

  In the substrate processing apparatus 1, the above-described steps S <b> 11 to S <b> 26 are sequentially performed on the plurality of substrates 9 to process the plurality of substrates 9. Note that step S22 may be performed after the completion of step S26 and before the next substrate 9 is carried in, or may be performed in parallel with steps S11 to S17 for the next substrate 9. Alternatively, step S22 may be performed between step S17 and step S18 for the next substrate 9.

  As described above, in the substrate processing apparatus 1, the top plate 51 is held by the counter member holding unit 53 at the first position and is spaced upward from the substrate holding unit 31. The top plate 51 is also held by the substrate holding unit 31 at the second position, and is rotated together with the substrate holding unit 31 by the substrate rotating mechanism 33. The gas supply unit 45 supplies gas to the processing space 90 between the top plate 51 and the substrate 9. Thereby, the processing space 90 can be set as a desired gas atmosphere, and the substrate 9 can be processed in the gas atmosphere. For example, when supplying an inert gas to the processing space 90, the substrate 9 can be processed in an inert gas atmosphere (that is, a low oxygen atmosphere).

  In the substrate processing apparatus 1, the gas supply unit 45 also causes the inner surface of the held portion 512 of the top plate 51 and the processing liquid nozzle located inside the held portion 512 (that is, the first process located at the supply position). Gas is supplied to the gap 518 between the liquid nozzle 411 and the outer surface of the second processing liquid nozzle 421). For this reason, the gap 518 between the top plate 51 that rotates together with the substrate 9 and the stationary treatment liquid nozzle can be sealed with the gas. Accordingly, it is possible to suppress the outside air (that is, the atmosphere around the processing space 90) from entering the processing space 90 from the gap 518 between the top plate 51 and the processing liquid nozzle. As a result, the processing space 90 can be maintained in a desired gas atmosphere, and the processing of the substrate 9 in the gas atmosphere can be easily performed. The above “outside air” means the atmosphere around the processing space 90 in the housing 11, that is, the atmosphere around the top plate 51 and the substrate holding unit 31. The same applies to the following description.

  As described above, in the substrate processing apparatus 1, the gas from the gas supply unit 45 is supplied from the first processing liquid nozzle 411 while the first processing liquid is supplied from the first processing liquid nozzle 411 to the substrate 9 (step S <b> 16). While the second processing liquid nozzle 421 supplies the second processing liquid to the substrate 9 (step S19), the gas from the gas supply unit 45 is supplied from the second processing liquid nozzle 421. Thereby, the structure which supplies the gas from the gas supply part 45 to the process space 90 in parallel with the process of the board | substrate 9 by a 1st process liquid and a 2nd process liquid can be simplified.

  In the substrate processing apparatus 1, an opposing member holding part moving mechanism 57 is provided that retracts the opposing member holding part 53 from above the top plate 51 with the top plate 51 positioned at the second position. In the substrate processing apparatus 1, when the top plate 51 rotates, the counter member holding portion 53 is retracted from above the top plate 51, thereby suppressing the turbulence of the air flow by the counter member holding portion 53 above the top plate 51. be able to. Further, the shape of the upper surface of the top plate 51 and the degree of freedom of arrangement of the additional structure on the upper surface can be improved.

  Further, in the substrate processing apparatus 1, the processing liquid nozzle (that is, the first processing liquid nozzle 411 or the second processing liquid nozzle 421) is moved inward from the upper opening 517 of the held portion 512 with the facing member holding portion 53 retracted. The gas from the gas supply unit 45 is inserted and supplied directly to the gap 518 from the outer surface of the processing liquid nozzle. As a result, gas can be easily supplied to the gap 518. The supply of gas from the gas supply unit 45 via the counter member holding unit 53 may be omitted. In this case, the opposing member holding part 53 may be a substantially solid member, for example. Thereby, the structure of the opposing member holding | maintenance part 53 can be simplified.

  The gas from the gas supply unit 45 is obliquely upward and obliquely from the outer surface of the processing liquid nozzle (that is, the first processing liquid nozzle 411 or the second processing liquid nozzle 421 inserted in the held portion 512) located at the supply position. Supplied downward. Thereby, it is possible to further suppress the outside air from entering the gap 518 from the upper opening 517 of the held portion 512.

  In the substrate processing apparatus 1, the labyrinth 54 is formed between the upper surface of the facing member flange portion 516 and the lower surface of the nozzle flange portion 414. As a result, outside air in the vicinity of the held portion 512, that is, outside air on the lower side of the opposing member flange portion 516 and radially outside of the flange connecting portion 515, is caught from between the opposing member flange portion 516 and the nozzle flange portion 414. It is possible to suppress entry into the gap 518 and the processing space 90 through the upper opening 517 of the holding unit 512. Further, the gas from the gas supply unit 45 is supplied toward the labyrinth 54 from the outer surface of the processing liquid nozzle, so that outside air enters the gap 518 between the counter member flange 516 and the nozzle flange 414. This can be further suppressed.

  In the substrate processing apparatus 1, the first processing liquid is supplied to the substrate 9 through the counter member opening 514 with the first processing liquid nozzle 411 positioned at the supply position under the control of the control unit 21. The nozzle 411 moves from the supply position to the retracted position. Then, the second processing liquid nozzle 421 moves from the retracted position to the supply position, and the second processing liquid is supplied to the substrate 9 through the counter member opening 514. Thereby, compared with the case where a plurality of types of processing liquids are sequentially supplied from one processing liquid nozzle, a mixture of a plurality of types of processing liquids can be suppressed or prevented. Further, since the first processing liquid nozzle 411 and the second processing liquid nozzle 421 can be retracted from the supply position, even if the processing liquid adheres to the inner surface of the held portion 512 of the top plate 51, the processing liquid Can be easily removed.

  The first processing liquid nozzle 411 and the second processing liquid nozzle 421 are inserted into the held portion 512 from the upper opening 517 of the held portion 512 protruding upward from the periphery of the counter member opening 514 at the supply position. . Thereby, it can suppress that external air approachs into the process space 90 via the opposing member opening 514. FIG. As a result, the processing space 90 can be maintained in a desired gas atmosphere, and the processing of the substrate 9 in the gas atmosphere can be easily performed.

  The leading ends of the first treatment liquid nozzle 411 and the second treatment liquid nozzle 421 are positioned above the lower end edge of the facing member opening 514 or at the same position as the lower end edge in the vertical direction at the supply position. Thereby, it can suppress that the 1st process liquid supplied from the 1st process liquid nozzle 411 rebounds on the board | substrate 9, and adheres to the front-end | tip part of the 1st process liquid nozzle 411. Similarly, the second processing liquid supplied from the second processing liquid nozzle 421 can be prevented from adhering to the tip of the second processing liquid nozzle 421 by rebounding on the substrate 9 or the like.

  In the substrate processing apparatus 1, the opposing member holding part 53 includes a first flange support part 532, a second flange support part 534 located on the opposite side of the first flange support part 532 across the flange connection part 515, and the first A holding portion main body 531 to which the flange support portion 532 and the second flange support portion 534 are attached is provided. Each of the first flange support portion 532 and the second flange support portion 534 supports and supports a part of the opposing member flange portion 516 of the top plate 51 located at the first position from below. In a state where the top plate 51 is located at the second position, the first flange support portion 532 and the second flange support portion 534 are opposed to each other by moving the first flange support portion 532 and the second flange support portion 534 horizontally. It is spaced apart from the member flange portion 516 in the radially outward direction, and is disposed below the opposing member flange portion 516.

  Accordingly, in the substrate processing apparatus 1, the first flange support portion 532 and the second flange support portion are configured with a simple structure regardless of whether the top plate 51 positioned at the second position is stationary or rotating. 534 can be easily separated from the opposing member flange portion 516, and the opposing member holding portion 53 can be moved to the retracted position. Further, the first flange support portion 532 and the second flange support portion 534 can be easily inserted below the opposing member flange portion 516 with a simple structure regardless of whether the top plate 51 is stationary or rotating. Then, the opposing member holding portion 53 can be moved to the holding position. That is, in the substrate processing apparatus 1, the top plate 51 can be held with a simple structure, and regardless of the state of the top plate 51, the opposing member holding portion 53 can be held between the holding position and the retracted position with a simple structure. Can move between.

  As described above, in the substrate processing apparatus 1, the movement of the facing member holding portion 53 from the retracted position to the holding position (step S23) is performed before the rotation of the top plate 51 and the like is stopped (step S24). In this way, by moving the facing member holding portion 53 to the holding position while the top plate 51 or the like is rotating, the time required for processing the substrate 9 (step S23 is performed after step S24) (see FIG. That is, the time from when the substrate 9 is loaded into the substrate processing apparatus 1 to when it is unloaded can be shortened. Further, when the movement of the opposing member holding portion 53 from the holding position to the retracted position (step S13) is performed after the start of rotation of the top plate 51 or the like (step S15), that is, during rotation of the top plate 51 or the like. When the opposing member holding portion 53 is moved to the retracted position, the time required for processing the substrate 9 can be shortened compared to the case where step S13 is performed before step S15.

  In the substrate processing apparatus 1, the first flange support portion 532 and the second flange support portion 534 are fixed to the holding portion main body 531. And the opposing member holding | maintenance part moving mechanism 57 rotates the holding | maintenance part main body 531 horizontally, and the opposing member holding | maintenance part 53 moves between a holding position and a retracted position. Further, due to the rotation of the holding portion main body 531, the first flange support portion 532 and the second flange support portion 534 are separated radially outward from the opposing member flange portion 516, and below the opposing member flange portion 516. Be placed. As a result, the counter member holding portion 53 can be moved between the holding position and the retracted position regardless of whether the top plate 51 is rotated or not, while simplifying the structure of the counter member holding portion 53.

  In the substrate processing apparatus 1, the first processing liquid nozzle 411 located at the retracted position is cleaned by the nozzle cleaning unit 44. Thereby, even if the first processing liquid or the like adheres to the first processing liquid nozzle 411, the deposits can be removed and the first processing liquid nozzle 411 can be maintained in a clean state. As a result, when the first processing liquid nozzle 411 is moved from the retracted position to the supply position, unintentional dripping of the first processing liquid from the first processing liquid nozzle 411 can be suppressed or prevented. In addition, unintentional dripping of the first processing liquid onto the substrate 9 can be suppressed or prevented in a state where the first processing liquid nozzle 411 is located at the supply position.

  In the substrate processing apparatus 1, the second processing liquid nozzle 421 positioned at the retreat position is also cleaned by the nozzle cleaning unit 44. Thereby, the 2nd process liquid nozzle 421 can be maintained in a clean state. As a result, unintentional dripping of the second processing liquid from the second processing liquid nozzle 421 is suppressed when the second processing liquid nozzle 421 is moved or when the second processing liquid nozzle 421 is in the second position. Or it can be prevented.

  FIG. 13 is a plan view showing a substrate processing apparatus 1a according to the second embodiment of the present invention. In the substrate processing apparatus 1 a, an opposing member holding portion 53 a having different orientations of the first flange supporting portion 532 and the second flange supporting portion 534 from the opposing member holding portion 53 shown in FIGS. It is provided instead. The opposing member holding portion 53a is also provided with a support portion moving mechanism 530. The other configuration of the substrate processing apparatus 1a is the same as that of the substrate processing apparatus 1 shown in FIG. 1, and the same reference numerals are given to the corresponding configurations in the following description.

  As shown in FIG. 13, in the opposing member holding portion 53a, the first flange support portion 532, the first connection portion 533, the second flange support portion 534, and the second connection portion 535 are supported at the distal end portion of the holding portion main body 531. It is attached via a part moving mechanism 530. The first flange support portion 532 and the first connection portion 533, and the second flange support portion 534 and the second connection portion 535 are located at approximately the same position in the longitudinal direction of the holding portion main body 531. The second flange support part 534 is located on the opposite side of the first flange support part 532 across the flange connection part 515 of the top plate 51.

  Each of the first connection portion 533 and the second connection portion 535 is a substantially flat portion that extends downward from the support portion moving mechanism 530. Each of the first connection portion 533 and the second connection portion 535 extends in a direction substantially parallel to the longitudinal direction of the holding portion main body 531. The first flange support portion 532 is a substantially flat portion that extends substantially horizontally from the lower end portion of the first connection portion 533. The first flange support portion 532 extends from the first connection portion 533 in a direction approaching the second flange support portion 534. The second flange support part 534 is a substantially flat plate-like part that extends substantially horizontally from the lower end part of the second connection part 535. The second flange support portion 534 extends from the second connection portion 535 in a direction approaching the first flange support portion 532.

  The distance between the first flange support portion 532 and the second flange support portion 534 in the direction perpendicular to the longitudinal direction of the holding portion main body 531 (hereinafter referred to as “width direction”) is the opposing member flange portion of the top plate 51. It is smaller than the outer diameter of 516 and larger than the outer diameter of the flange connection portion 515. The distance between the first connection part 533 and the second connection part 535 in the width direction of the holding part main body 531 is larger than the outer diameter of the opposing member flange part 516.

  The support part moving mechanism 530 is configured so that the first connection part 533 and the first flange support part 532, and the second connection part 535 and the second flange support part 534 are substantially parallel to the longitudinal direction of the holding part main body 531. Move horizontally. That is, in the opposing member holding portion 53 a, the first flange support portion 532 and the second flange support portion 534 can be moved relative to the holding portion main body 531 by the support portion moving mechanism 530.

  In the substrate processing apparatus 1a, the first flange support portion 532 and the second flange support portion 534 are opposed to the opposing member flange portion 516 of the top plate 51 located at the first position in a state where the holding portion main body 531 is located at the holding position. The top plate 51 is supported in contact with a part of the plate from below. Further, the first flange support portion 532 and the second flange support portion 534 are held by the support portion moving mechanism 530 with the holding portion main body 531 in the holding position and the top plate 51 in the second position. By moving toward the base of 531, as shown in FIG. 14, the first flange support portion 532 and the second flange support portion 534 are separated from the opposing member flange portion 516 radially outward. In this state, the opposing member holding part 53a is horizontally rotated by the opposing member holding part moving mechanism 57, whereby the opposing member holding part 53a moves between the holding position and the retracted position.

  In the substrate processing apparatus 1a, the first flange support portion 532 and the second flange support are supported by the support portion moving mechanism 530 in a state where the holding portion main body 531 is located at the holding position and the top plate 51 is located at the second position. As the portion 534 moves toward the tip of the holding portion main body 531, the first flange support portion 532 and the second flange support portion 534 are disposed below the opposing member flange portion 516 as shown in FIG.

  In the substrate processing apparatus 1a, similarly to the substrate processing apparatus 1 shown in FIG. 1, the first flange support portion 532 and the first flange support section 532 and the first flange support section 532 can be used regardless of whether the top plate 51 located at the second position is stationary or rotating. The two-flange support portion 534 can be separated from the opposing member flange portion 516, and the opposing member holding portion 53a can be moved to the retracted position. Further, regardless of whether the top plate 51 is stationary or rotating, the opposing member holding portion 53a is moved from the retracted position to the holding position, so that the first flange support portion 532 and the second flange support portion 534 face each other. It can be arranged below the member flange portion 516. That is, in the substrate processing apparatus 1a, the top plate 51 can be held with a simple structure, and regardless of the state of the top plate 51, the opposing member holding portion 53a can be held between the holding position and the retracted position with a simple structure. Can move between. As described above, in the substrate processing apparatus 1a, as in the substrate processing apparatus 1 shown in FIG. 1, the movement between the holding position and the retracted position of the opposing member holding portion 53a is performed while the top plate 51 and the like are rotating. Therefore, the time required for processing the substrate 9 can be shortened.

  In the substrate processing apparatus 1 a, the moving direction of the first flange support portion 532 and the second flange support portion 534 by the support portion moving mechanism 530 does not necessarily have to be a direction substantially parallel to the longitudinal direction of the holding portion main body 531. For example, the first flange support portion 532 and the second flange support portion 534 may move horizontally in a direction substantially perpendicular to the longitudinal direction of the holding portion main body 531 by the support portion moving mechanism 530. In this case, the first flange support portion 532 and the second flange support portion 534 move in a direction away from each other, so that the first flange support portion 532 and the second flange support portion 534 are radially out of the opposing member flange portion 516. Move away. Further, the first flange support portion 532 and the second flange support portion 534 move in a direction approaching each other, whereby the first flange support portion 532 and the second flange support portion 534 are disposed below the opposing member flange portion 516. .

  FIG. 15 is a plan view showing a substrate processing apparatus 1b according to the third embodiment of the present invention. 16 is a cross-sectional view of the substrate processing apparatus 1b cut at a position XVI-XVI in FIG. In the substrate processing apparatus 1b, the opposing member holding part 53b is replaced with a flange support part instead of the first flange support part 532, the first connection part 533, the second flange support part 534, and the second connection part 535 of the substrate processing apparatus 1. 538 and a connection portion 539. Further, the substrate processing apparatus 1b includes a first processing liquid nozzle 411a and a second processing liquid nozzle 421a having different structures instead of the first processing liquid nozzle 411 and the second processing liquid nozzle 421. Further, in the substrate processing apparatus 1b, the opposing member holding part moving mechanism 57 shown in FIG. 1 is omitted, and the first processing liquid nozzle 411a and the second processing liquid nozzle 421a are arranged on the top plate 51 via the opposing member holding part 53b. It is inserted into the held portion 512. The other configuration of the substrate processing apparatus 1b is the same as that of the substrate processing apparatus 1 shown in FIGS. 1 and 2, and the same reference numerals are given to the corresponding configurations in the following description.

  The flange support portion 538 and the connection portion 539 are attached to the distal end portion of the holding portion main body 531. The connection part 539 is a substantially cylindrical part centering on the central axis J1. The connecting portion 539 is fixed to the holding portion main body 531 and extends downward from the lower surface of the holding portion main body 531. The flange support part 538 is a substantially annular plate-shaped part centering on the central axis J1. The flange support portion 538 extends radially inward from the lower end portion of the connection portion 539. The inner diameter of the flange support portion 538 is smaller than the outer diameter of the opposing member flange portion 516.

  As shown in FIG. 16, in a state where the top plate 51 is located at the first position, the flange support portion 538 supports and contacts a part of the opposing member flange portion 516 of the top plate 51 from below. Thereby, the top plate 51 is suspended above the substrate 9 and the substrate holding part 31 by the opposing member holding part 53b. In other words, the top plate 51 is held by the opposing member holding portion 53b at the first position and is separated upward from the substrate holding portion 31.

  The flange support portion 538 and the opposing member flange portion 516 are provided with a movement restricting portion (not shown) that engages with each other and restricts the displacement of the top plate 51 (that is, movement and rotation of the top plate 51). The movement restricting portion includes, for example, a protruding portion that protrudes upward from the upper surface of the flange support portion 538, and a through hole that is provided in the opposing member flange portion 516 and into which the protruding portion is inserted.

  A through-hole 537 that penetrates the holding portion main body 531 up and down is provided at the distal end portion of the holding portion main body 531. The through hole 537 communicates with the holding portion internal space 536. In the example shown in FIG. 16, the through hole 537 has two substantially circular openings 537 a provided on the upper surface and the lower surface of the holding portion main body 531. The two openings 537a overlap in plan view. The through hole 537 is provided above the held portion 512 of the top plate 51. The through hole 537 is located on the radially inner side of the connecting portion 539 and on the radially inner side of the inner edge of the flange support portion 538. In the example shown in FIG. 16, the first processing liquid nozzle 411 a is inserted into the held portion 512 of the top plate 51 through the through hole 537.

  FIG. 17 is a cross-sectional view showing the substrate processing apparatus 1b in a state where the top plate 51 is located at the second position. When the top plate 51 is lowered and positioned at the second position by the facing member lifting mechanism 55, the facing member flange portion 516 of the top plate 51 is separated upward from the flange support portion 538 of the facing member holding portion 53b. As a result, the top plate 51 is held by the substrate holding part 31 and is separated from the opposing member holding part 53b at the second position (that is, in a non-contact state with the opposing member holding part 53b). When the substrate rotation mechanism 33 is driven with the top plate 51 positioned at the second position, the top plate 51 rotates together with the substrate holding unit 31.

  As shown in FIG. 17, the first processing liquid nozzle 411 a is located above the top plate 51. The first treatment liquid nozzle 411a protrudes downward from the holding portion main body 531 of the opposing member holding portion 53b via the through hole 537 of the opposing member holding portion 53b, and is held from the upper opening 517 of the holding portion 512 of the top plate 51. Inserted into the section 512. The first processing liquid nozzle 411 a is located at a supply position inside the held portion 512. In other words, the outer surface of the first processing liquid nozzle 411a faces the inner surface of the held portion 512 in the radial direction. In the example shown in FIG. 17, the front end (that is, the lower end) of the first processing liquid nozzle 411 a is positioned above the lower end edge of the opposing member opening 514 of the opposing member main body 511. The tip of the first treatment liquid nozzle 411a may be located at the same position as the lower edge of the counter member opening 514 in the up-down direction.

  18 is an enlarged cross-sectional view of the first treatment liquid nozzle 411a and the vicinity thereof in FIG. Also in FIG. 18, the top plate 51 is located at the second position. The first treatment liquid nozzle 411a includes a nozzle body 415 and a nozzle flange portion 414. In the first treatment liquid nozzle 411a, the side injection ports 417c and 417d are omitted from the first treatment liquid nozzle 411 shown in FIG. The nozzle body 415 has a substantially cylindrical shape, and is inserted into the flange connection portion 515 of the held portion 512 through the through hole 537 (that is, the two openings 537a) of the facing member holding portion 53b. The nozzle flange portion 414 is connected to the upper end portion of the nozzle body 415. The nozzle flange portion 414 is a substantially disk-shaped portion that extends radially outward from the upper portion of the nozzle body 415. The nozzle flange portion 414 contacts the upper surface of the facing member holding portion 53b and covers the upper opening 537a. For example, an O-ring is provided between the lower surface of the nozzle flange portion 414 and the upper surface of the facing member holding portion 53b.

  In the example shown in FIG. 18, a labyrinth 54a is formed between the upper surface of the opposing member flange portion 516 and the opposing member holding portion 53b. Specifically, by a first protrusion 541 that protrudes upward from the upper surface of the opposing member flange 516, and two second protrusions 542 that protrude downward from the lower surface of the holding body 531 of the opposing member holding portion 53b, A labyrinth 54a is formed over the entire circumference. The first protrusion 541 and the two second protrusions 542 are substantially cylindrical with the central axis J1 as the center, and the diameters thereof are different from each other. The diameter of the first protrusion 541 is larger than the diameter of the inner second protrusion 542 and smaller than the diameter of the outer second protrusion 542. The upper ends of the first protrusions 541 are positioned above the lower ends of the two second protrusions 542. When the top plate 51 located at the second position rotates together with the substrate holding portion 31, the two second protrusions 542 do not rotate, and the first protrusion 541 is between the two second protrusions 542. Rotate.

  A part of the inert gas supplied from the gas supply unit 45 (see FIG. 6) to the first processing liquid nozzle 411a is supplied from the lower surface injection port 417a of the first processing liquid nozzle 411a to the top plate through the counter member opening 514. It is supplied to the processing space 90 between 51 and the substrate 9. Part of the inert gas supplied from the gas supply unit 45 to the first processing liquid nozzle 411a is supplied to the held portion 512 of the top plate 51 from the plurality of side surface injection ports 417b on the outer side surface of the first processing liquid nozzle 411a. It is supplied to a gap 518 between the inner side surface and the outer side surface of the first processing liquid nozzle 411a. The inert gas supplied obliquely downward from the side injection port 417 b to the gap 518 flows downward through the gap 518 and is supplied to the processing space 90.

  The inert gas supplied from the gas supply part 45 to the holding part internal space 536 of the facing member holding part 53b is supplied into the held part 512 from the upper opening 517 of the held part 512 via the facing member holding part 53b. The Specifically, the inert gas supplied from the gas supply unit 45 to the holding unit internal space 536 is supplied toward the upper and lower openings 537 a of the through holes 537. As described above, since the upper opening 537a is blocked by the nozzle flange portion 414, the inert gas flows downward from the lower opening 537a. Then, it flows downward through the gap 518 and is supplied from the opposing member opening 514 to the processing space 90. In addition, a part of the inert gas supplied from the gas supply unit 45 to the holding unit internal space 536 flows radially outward on the opposing member flange unit 516 and is supplied to the labyrinth 54a, via the labyrinth 54a. It flows outward in the circumferential direction of the labyrinth 54a. The same applies to the state in which the second treatment liquid nozzle 421a is located at the supply position.

  FIG. 19 is a plan view showing the substrate processing apparatus 1b. In FIG. 19, the first processing liquid nozzle 411 a is moved from the supply position above the top plate 51 shown in FIG. 15 by the first nozzle lifting mechanism 431 and the first nozzle rotating mechanism 432, and separated from the top plate 51. The top plate 51 is located at a retracted position around the top plate 51. Further, the second processing liquid nozzle 421a is moved from the retreat position around the top plate 51 shown in FIG. 15 by the second nozzle raising / lowering mechanism 433 and the second nozzle rotating mechanism 434 to the supply position above the top plate 51. positioned. The retreat position of the first treatment liquid nozzle 411a and the second treatment liquid nozzle 421a is a space having an extent that allows the first treatment liquid nozzle 411a and the second treatment liquid nozzle 421a to swing at the retraction position ( In other words, it is a concept including a retreat space.

  Similarly to the first processing liquid nozzle 411a shown in FIG. 18, the second processing liquid nozzle 421a is inserted into the through hole 537 of the opposing member holding portion 53b at the above-described supply position, and further, the held portion of the top plate 51 It is inserted into the held portion 512 from the upper opening 517 of 512 (see FIG. 18). Further, the front end (that is, the lower end) of the second processing liquid nozzle 421a is similar to the first processing liquid nozzle 411a shown in FIG. Is also located above. The tip of the second treatment liquid nozzle 421a may be located at the same position as the lower edge of the opposing member opening 514 in the up-down direction.

  Next, an example of the processing flow of the substrate 9 in the substrate processing apparatus 1b will be described with reference to FIGS. 20A and 20B. The processing of the substrate 9 in the substrate processing apparatus 1b is substantially the same as the processing of the substrate 9 in the substrate processing apparatus 1 except that the movement of the facing member holding portion 53 in steps S13 and S23 in FIGS. 12A and 12B is omitted. is there.

  In the substrate processing apparatus 1b, first, the substrate 9 is carried into the housing 11 and held by the substrate holding part 31 with the top plate 51 positioned at the first position shown in FIG. 16 (step S31). At this time, the first treatment liquid nozzle 411a and the second treatment liquid nozzle 421a are located at their retreat positions.

  Subsequently, the control member 21 (see FIG. 1) controls the facing member lifting mechanism 55, whereby the top plate 51 moves downward from the first position to the second position shown in FIG. 51 is held by the substrate holder 31 (step S32). Further, the control unit 21 controls the first nozzle raising / lowering mechanism 431 and the first nozzle rotating mechanism 432, whereby the first processing liquid nozzle 411a moves from the retracted position to the supply position (step S33). The first treatment liquid nozzle 411 a is inserted into the held portion 512 of the top plate 51 through the through hole 537 of the opposing member holding portion 53 b and is located inside the held portion 512.

  Note that step S32 and step S33 may be performed in parallel. Alternatively, the first processing liquid nozzle 411a may be moved from the retracted position to above the top plate 51 before step S32 and inserted into the held portion 512 of the top plate 51 located at the first position. . In this case, in step S <b> 32, the first processing liquid nozzle 411 a is also lowered together with the top plate 51 in synchronization with the lowering of the top plate 51.

  Next, when the gas supply unit 45 is controlled by the control unit 21, the inert gas is supplied to the processing space 90 from the lower surface injection port 417a of the first processing liquid nozzle 411a shown in FIG. Further, the inert gas is supplied from the side surface injection port 417b of the first processing liquid nozzle 411a to the gap 518 between the inner surface of the held portion 512 of the top plate 51 and the outer surface of the first processing liquid nozzle 411a. . Further, the inert gas supplied to the holding portion internal space 536 of the facing member holding portion 53 b is supplied to the gap 518 from the upper opening 517 of the held portion 512. The inert gas supplied to the gap 518 from the first processing liquid nozzle 411a and the opposing member holding portion 53b flows downward and is supplied to the processing space 90 through the opposing member opening 514. A part of the inert gas supplied to the holding part internal space 536 is also supplied to the labyrinth 54a.

  Further, when the substrate rotating mechanism 33 shown in FIG. 17 is controlled by the control unit 21, the rotation of the substrate holding unit 31, the substrate 9 and the top plate 51 is started (step S34). Then, the first processing liquid supply unit 413 is controlled by the control unit 21 so that the first processing liquid is supplied from the first processing liquid nozzle 411a to the second in a state where the first processing liquid nozzle 411a is located at the supply position. Is supplied to the central portion of the upper surface 91 of the rotating substrate 9 through the counter member opening 514 of the top plate 51 located at the position (step S35). The first processing liquid supplied to the central portion of the substrate 9 from the first processing liquid nozzle 411 a located at the supply position spreads radially outward from the central portion of the substrate 9 due to the rotation of the substrate 9. It is applied to the entire top surface 91. The first processing liquid scatters radially outward from the outer edge of the substrate 9 and is received by the cup portion 37. In the substrate processing apparatus 1b, the processing of the substrate 9 with the first processing liquid is completed by applying the first processing liquid for a predetermined time.

  When the processing of the substrate 9 with the first processing liquid is completed, the supply of the first processing liquid from the first processing liquid nozzle 411a is stopped. Then, the first processing liquid nozzle 411a is moved from the supply position to the retracted position by the first nozzle lifting mechanism 431 and the first nozzle rotating mechanism 432 (step S36). When the first processing liquid nozzle 411a moves from the supply position, the inert gas from the gas supply unit 45 passes through the holding portion internal space 536 of the facing member holding portion 53b and passes through the upper opening 517 of the held portion 512 to the processing space. 90.

  In the substrate processing apparatus 1b, the second nozzle lifting mechanism 433 and the second nozzle rotating mechanism 434 are controlled by the control unit 21, whereby the second processing liquid nozzle 421a is moved from the retracted position to the supply position as shown in FIG. (Step S37). The second processing liquid nozzle 421a is inserted into the held portion 512 of the top plate 51 through the through hole 537 of the opposing member holding portion 53b, and is located inside the held portion 512. The movement of the second processing liquid nozzle 421a (step S37) is preferably performed in parallel with the movement of the first processing liquid nozzle 411a (step S36). Note that step S37 may be performed after step S36 is completed.

  When the second processing liquid nozzle 421a is located at the supply position, the inert gas from the gas supply unit 45 is supplied to the processing space 90 from the lower surface injection port of the second processing liquid nozzle 421a. Further, the inert gas has a gap 518 between the inner side surface of the held portion 512 of the top plate 51 and the outer side surface of the second processing liquid nozzle 421a from the side injection port on the outer side surface of the second processing liquid nozzle 421a. To be supplied. Further, the inert gas is supplied to the gap 518 from the upper opening 517 of the held portion 512 via the holding portion internal space 536 of the facing member holding portion 53b. The inert gas supplied to the gap 518 flows downward and is supplied to the processing space 90 through the counter member opening 514. A part of the inert gas supplied to the holding part internal space 536 is also supplied to the labyrinth 54a.

  Subsequently, when the second processing liquid supply unit 423 is controlled by the control unit 21, the second processing liquid is transferred from the second processing liquid nozzle 421a to the second processing liquid nozzle 421a in a state where the second processing liquid nozzle 421a is located at the supply position. It is supplied to the central portion of the upper surface 91 of the rotating substrate 9 through the counter member opening 514 of the top plate 51 located at the position 2 (step S38). The second processing liquid supplied to the central portion of the substrate 9 from the second processing liquid nozzle 421a located at the supply position spreads radially outward from the central portion of the substrate 9 due to the rotation of the substrate 9, and It is applied to the entire top surface 91. The second processing liquid scatters radially outward from the outer edge of the substrate 9 and is received by the cup portion 37. By applying the second processing liquid for a predetermined time, the processing of the substrate 9 by the second processing liquid is completed.

  In the substrate processing apparatus 1b, the control unit 21 controls the first cleaning unit 441 in parallel with the movement of the second processing liquid nozzle 421a (step S37) or the supply of the second processing liquid (step S38). The first processing liquid nozzle 411a located at the retreat position is cleaned (step S39).

  When the processing of the substrate 9 with the second processing liquid is completed, the supply of the second processing liquid from the second processing liquid nozzle 421a is stopped. The rotation of the substrate 9 is maintained, and the substrate 9 is dried. Further, the second processing liquid nozzle 421a is moved from the supply position to the retracted position by the second nozzle lifting mechanism 433 and the second nozzle rotating mechanism 434 (step S40). Then, the second cleaning unit 442 is controlled by the control unit 21, whereby the second processing liquid nozzle 421a located at the retracted position is cleaned (step S41).

  Further, the rotation of the substrate holding unit 31, the substrate 9 and the top plate 51 by the substrate rotating mechanism 33 is stopped (step S42). Subsequently, the top plate 51 is moved upward from the second position to the first position by the facing member lifting mechanism 55, and the top plate 51 is separated upward from the substrate holding portion 31 by the facing member holding portion 53b. It is held (step S43). Thereafter, the substrate 9 is unloaded from the housing 11 (step S44). Steps S42 to S44 are performed after the end of step S41, for example. Alternatively, step S41 may be performed in parallel with any one or a plurality of steps S42 to S44. Step S39 may also be performed in parallel with step S41, for example.

  In the substrate processing apparatus 1b, the above-described steps S31 to S44 are sequentially performed on the plurality of substrates 9, and the plurality of substrates 9 are processed. Note that step S41 may be performed after the completion of step S44 and before the next substrate 9 is carried in, or may be performed in parallel with steps S31 to S36 for the next substrate 9. Alternatively, step S41 may be performed between step S36 and step S37 for the next substrate 9.

  As described above, in the substrate processing apparatus 1b, similarly to the substrate processing apparatus 1 shown in FIG. 1, the top plate 51 is held at the first position by the counter member holding portion 53b and the substrate holding portion. It is spaced apart from 31 upward. The top plate 51 is also held by the substrate holding unit 31 at the second position, is separated from the opposing member holding unit 53b, and is rotated together with the substrate holding unit 31 by the substrate rotating mechanism 33. The gas supply unit 45 supplies gas to the processing space 90 between the top plate 51 and the substrate 9. Thereby, the processing space 90 can be set as a desired gas atmosphere, and the substrate 9 can be processed in the gas atmosphere. For example, when supplying an inert gas to the processing space 90, the substrate 9 can be processed in an inert gas atmosphere (that is, a low oxygen atmosphere).

  In the substrate processing apparatus 1b, the gas supply unit 45 also causes the inner surface of the held portion 512 of the top plate 51 and the processing liquid nozzle located inside the held portion 512 (that is, the first process located at the supply position). Gas is supplied to the gap 518 between the liquid nozzle 411a and the outer surface of the second processing liquid nozzle 421a). For this reason, the gap 518 between the top plate 51 that rotates together with the substrate 9 and the stationary treatment liquid nozzle can be sealed with the gas. Thereby, it is possible to suppress the outside air from entering the processing space 90 from the gap 518 between the top plate 51 and the processing liquid nozzle. As a result, the processing space 90 can be maintained in a desired gas atmosphere, and the processing of the substrate 9 in the gas atmosphere can be easily performed.

  As described above, the processing liquid nozzle located at the supply position protrudes downward from the opposing member holding portion 53 b and is inserted from the upper opening 517 of the held portion 512 of the top plate 51. Further, the gas from the gas supply unit 45 is supplied into the held portion 512 from the upper opening 517 of the held portion 512 via the opposing member holding portion 53b. As a result, not only when the first processing liquid nozzle 411a and the second processing liquid nozzle 421a are positioned at the supply positions, but also during the exchange from the first processing liquid nozzle 411a to the second processing liquid nozzle 421a (that is, to-be-held) Even when the processing liquid nozzle is not present inside the portion 512), it is possible to prevent outside air from entering the processing space 90 from the upper opening 517 of the held portion 512.

  As described above, the processing liquid nozzle located at the supply position is inserted into the held portion 512 via the through hole 537 provided in the opposing member holding portion 53b above the held portion 512. Further, the gas from the gas supply unit 45 is supplied toward the through hole 537. When the processing liquid nozzle is positioned at the supply position, the gas flows from the opening 537 a below the through hole 537 to the gap 518. Thereby, the gas can be easily guided from the facing member holding portion 53b to the processing space 90.

  Further, during the replacement from the first processing liquid nozzle 411a to the second processing liquid nozzle 421a (that is, in a state where the processing liquid nozzle is not inserted into the through hole 537), the gas from the gas supply unit 45 passes through the through hole. Supplied toward the upper and lower openings 537a of 537. Since the gas is supplied toward the upper opening 537a, the outside air in the vicinity of the facing member holding portion 53b can be prevented from entering the holding portion internal space 536 from the upper opening 537a. Further, since the gas is supplied toward the lower opening 537a and flows to the upper opening 517 of the held portion 512 and the opposing member flange portion 516, the outside air in the vicinity of the held portion 512 is It is possible to suppress entry into the processing space 90 from between the upper surface and the opposing member holding portion 53b through the upper opening 517 of the held portion 512.

  In a state where the top plate 51 is located at the second position, the labyrinth 54a is formed between the upper surface of the opposing member flange portion 516 of the top plate 51 and the opposing member holding portion 53b. As a result, outside air in the vicinity of the held portion 512 enters the gap 518 and the processing space 90 from between the upper surface of the opposed member flange portion 516 and the opposed member holding portion 53b through the upper opening 517 of the held portion 512. Can be suppressed. Further, the gas supplied from the gas supply unit 45 to the holding unit internal space 536 is supplied from the opening 537a on the lower surface of the holding unit main body 531 to the labyrinth 54a, whereby the counter member flange unit 516 and the counter member holding unit 53b. It is possible to further suppress the outside air from entering the gap 518 from between the two.

  As described above, the gas from the gas supply unit 45 is supplied to the gap 518 from the outer surface of the processing liquid nozzle located at the supply position. As described above, the gas can be easily supplied to the gap 518 by directly supplying the gas to the gap 518 from the outer surface of the treatment liquid nozzle located inside the held portion 512.

  In the substrate processing apparatus 1b, the first processing liquid is supplied to the substrate 9 through the counter member opening 514 in a state where the first processing liquid nozzle 411a is located at the supply position under the control of the control unit 21. The nozzle 411a moves from the supply position to the retracted position. Then, the second processing liquid nozzle 421 a moves from the retracted position to the supply position, and the second processing liquid is supplied to the substrate 9 through the counter member opening 514. Thereby, compared with the case where a plurality of types of processing liquids are sequentially supplied from one processing liquid nozzle, a mixture of a plurality of types of processing liquids can be suppressed or prevented. Further, since the first processing liquid nozzle 411a and the second processing liquid nozzle 421a can be retracted from the supply position, even if the processing liquid adheres to the inner surface of the held portion 512 of the top plate 51, the processing liquid Can be easily removed.

  As described above, the first processing liquid nozzle 411a and the second processing liquid nozzle 421a are inserted into the through hole 537 provided in the facing member holding portion 53b above the facing member opening 514 at the supply position. Thereby, arrangement | positioning to the supply position of the 1st process liquid nozzle 411a and the 2nd process liquid nozzle 421a which are performed alternately can be made easy.

  As described above, in the substrate processing apparatus 1b, the gas from the gas supply unit 45 is supplied from the first processing liquid nozzle 411a while the first processing liquid is supplied from the first processing liquid nozzle 411a to the substrate 9 (step S35). While the second processing liquid is supplied from the second processing liquid nozzle 421a to the substrate 9 (step S38), the gas from the gas supply unit 45 is supplied from the second processing liquid nozzle 421a. Thereby, the structure which supplies the gas from the gas supply part 45 to the process space 90 in parallel with the process of the board | substrate 9 by a 1st process liquid and a 2nd process liquid can be simplified.

  Various modifications can be made in the above-described substrate processing apparatuses 1, 1a, 1b.

  In the substrate processing apparatuses 1 and 1a, a gap between the processing liquid nozzle and the held portion 512 is configured using a configuration different from the processing liquid nozzle (that is, the first processing liquid nozzle 411 and the second processing liquid nozzle 421). Gas may be supplied to 518.

  In the substrate processing apparatus 1b, the gas supply from the gas supply unit 45 to the gap 518 is not necessarily performed via both the processing liquid nozzle located at the supply position and the counter member holding unit 53b. For example, the gas may be supplied to the gap 518 from the side surface of the processing liquid nozzle (that is, the first processing liquid nozzle 411a and the second processing liquid nozzle 421a), and the supply of the gas from the facing member holding portion 53b may be omitted. . Thereby, the structure of the opposing member holding | maintenance part 53b can be simplified. In this case, the opposing member holding portion 53b is, for example, an approximately solid member, and the through hole 537 is a columnar hole that continues from the upper surface to the lower surface of the opposing member holding portion 53b. Further, the gas may be supplied from the facing member holding portion 53b to the gap 518 through the upper opening 517 of the held portion 512, and the supply of gas from the processing liquid nozzle to the gap 518 may be omitted. In this case, the structure of the treatment liquid nozzle can be simplified. Alternatively, the gas may be supplied to the gap 518 using a configuration different from that of the processing liquid nozzle and the counter member holding portion 53b.

  Note that gas is not necessarily supplied to the gap 518. Further, the supply position of the treatment liquid nozzle is not limited to the inside of the held portion 512 as long as it is a position above the facing member opening 514. For example, the treatment liquid nozzle may be disposed above the upper opening 517 of the held portion 512.

  In the substrate processing apparatus 1, the first processing liquid nozzle 411 or the second processing liquid nozzle 421 does not necessarily have to be inserted into the held portion 512 in a state where the facing member holding portion 53 is located at the retracted position. In addition, it is not always necessary for the opposing member holding portion 53 to move from the retracted position to the holding position in a state where the first processing liquid nozzle 411 and the second processing liquid nozzle 421 are located at the retracted position. For example, as shown in FIG. 21, a notch 531a larger than the nozzle flange 414 of the first processing liquid nozzle 411 is provided on the side surface of the holding body 531 and the first processing liquid nozzle 411 located at the supply position. May be accommodated in the cutout portion 531a of the opposing member holding portion 53 located at the holding position in plan view. In this case, the processing liquid nozzle (that is, the first processing liquid nozzle 411 or the second processing liquid nozzle 421) may be inserted into the held portion 512 while the facing member holding portion 53 is located at the holding position. Further, the opposing member holding portion 53 may move from the retracted position to the holding position while the processing liquid nozzle is inserted into the held portion 512.

  In the substrate processing apparatus 1, the first flange support portion 532 and the second flange support portion 534 may be partially connected at the right end portion or the like in FIG. 5. Similarly, in the substrate processing apparatus 1a, the first flange support portion 532 and the second flange support portion 534 may be partially connected at an end portion on the base side of the holding portion main body 531 or the like.

  In the substrate processing apparatuses 1, 1 a, 1 b, a plurality of types of processing liquids may be sequentially supplied onto the substrate 9 from the first processing liquid nozzles 411, 411 a. The same applies to the second treatment liquid nozzles 421 and 421a. In addition to the first treatment liquid nozzles 411 and 411a and the second treatment liquid nozzles 421 and 421a, other treatment liquid nozzles may be provided.

  The opposing member lifting mechanism 55 does not necessarily need to move the top plate 51 in the vertical direction, and may move the top plate 51 relative to the substrate holder 31. For example, the counter member lifting mechanism 55 moves the substrate holding portion 31 in the vertical direction without moving the top plate 51, thereby moving the top plate 51 between the first position and the second position in the vertical direction. Therefore, it may be moved relative to the substrate holder 31. In this case, the position of the top plate 51 held by the counter member holding portion 53 and spaced upward from the substrate holding portion 31 is the first position, and the top plate 51 in the state held by the substrate holding portion 31 is the first position. The position is the second position.

  In the substrate processing apparatuses 1, 1a, 1b, the cup portion 37 may include a plurality of cups arranged concentrically. In this case, when the type of the processing liquid supplied onto the substrate 9 is switched (for example, when switching from the chemical liquid to the cleaning liquid), it is preferable that the cup that receives the processing liquid from the substrate 9 is also switched. Thereby, a plurality of processing liquids can be easily separated and collected or discarded.

  In the substrate processing apparatuses 1, 1 a, 1 b, a lower nozzle may be provided at the center of the substrate holding unit 31, and the processing liquid may be supplied to the lower surface of the substrate 9.

  In the substrate processing apparatuses 1, 1 a, and 1 b, various processes that are desirably performed in a low oxygen environment can be performed using the top plate 51. The gas supplied to the processing space 90 is not limited to nitrogen gas, and may be other inert gas such as argon. The gas supplied to the processing space 90 is a gas for making a desired gas atmosphere on the substrate 9, for example, a mixed gas whose gas composition ratio is controlled (that is, a mixture of a plurality of types of gases). It may be. The gas supplied to the processing space 90 may be, for example, low-humidity dry air depending on the processing content.

  In the substrate processing apparatuses 1, 1 a, 1 b, various substrates other than the semiconductor substrate may be processed.

  The configurations in the above-described embodiments and modifications may be combined as appropriate as long as they do not contradict each other.

DESCRIPTION OF SYMBOLS 1, 1a, 1b Substrate processing apparatus 9 Substrate 21 Control part 31 Substrate holding part 33 Substrate rotation mechanism 43 Nozzle movement mechanism 44 Nozzle cleaning part 45 Gas supply part 51 Top plate 53, 53a, 53b Opposing member holding part 54, 54a Labyrinth 55 Counter member lifting mechanism 57 Counter member holding unit moving mechanism 90 Processing space 91 (Substrate) upper surface 411, 411a First processing liquid nozzle 413 First processing liquid supply unit 414 Nozzle flange 415 Nozzle body 421, 421a Second processing liquid nozzle 423 Second treatment liquid supply part 511 Opposing member main body 512 Held part 514 Facing member opening 515 Flange connecting part 516 Facing member flange part 517 Upper opening (of the held part) 518 Gap 530 Supporting part moving mechanism 531 Holding part main body 532 First 1 flange support part 534 2nd franc Support portion 537 through hole J1 central axis S11~S26, S31~S44 step

Claims (9)

  1. A substrate processing apparatus for processing a substrate,
    A substrate holder for holding the substrate in a horizontal state;
    A counter member facing the top surface of the substrate and having a counter member opening in the center;
    A counter member transport mechanism that holds the counter member and moves the counter member relative to the substrate holder between a first position and a second position in a vertical direction;
    A first processing liquid supply unit for supplying a first processing liquid to the upper surface of the substrate via a first processing liquid nozzle;
    A second processing liquid supply unit for supplying a second processing liquid to the upper surface of the substrate via a second processing liquid nozzle;
    A nozzle moving mechanism for individually moving the first processing liquid nozzle and the second processing liquid nozzle between a supply position above the opening of the counter member and a respective retraction position around the substrate holder;
    A substrate rotation mechanism for rotating the substrate together with the substrate holding portion around a central axis facing the vertical direction;
    A control unit for controlling the first processing liquid supply unit, the second processing liquid supply unit, and the nozzle moving mechanism;
    A gas supply unit that supplies gas to a space between the facing member and the substrate;
    With
    The counter member is held by the counter member transport mechanism at the first position, is spaced upward from the substrate holding unit, is held by the substrate holding unit at the second position, and rotates the substrate. Rotate with the substrate holder by the mechanism,
    With the control by the control unit, the first processing liquid is supplied to the substrate through the counter member opening in a state where the first processing liquid nozzle is located at the supply position, and the first processing liquid nozzle is Moved from the supply position to the retracted position, the second processing liquid nozzle is moved from the retracted position to the supply position, and the second processing liquid is supplied to the substrate through the counter member opening ;
    The first processing liquid nozzle and the second processing liquid nozzle are inserted into a through-hole provided in the counter member transport mechanism above the counter member opening at the supply position. apparatus.
  2.   The substrate processing apparatus according to claim 1,
      The substrate processing apparatus, wherein a gas from the gas supply unit is supplied from the opening of the counter member through the counter member transport mechanism.
  3. A substrate processing apparatus for processing a substrate,
    A substrate holder for holding the substrate in a horizontal state;
    A counter member facing the top surface of the substrate and having a counter member opening in the center;
    A counter member transport mechanism that holds the counter member and moves the counter member relative to the substrate holder between a first position and a second position in a vertical direction;
    A first processing liquid supply unit for supplying a first processing liquid to the upper surface of the substrate via a first processing liquid nozzle;
    A second processing liquid supply unit for supplying a second processing liquid to the upper surface of the substrate via a second processing liquid nozzle;
    A nozzle moving mechanism for individually moving the first processing liquid nozzle and the second processing liquid nozzle between a supply position above the opening of the counter member and a respective retraction position around the substrate holder;
    A substrate rotation mechanism for rotating the substrate together with the substrate holding portion around a central axis facing the vertical direction;
    A control unit for controlling the first processing liquid supply unit, the second processing liquid supply unit, and the nozzle moving mechanism;
    A gas supply unit that supplies gas to a space between the facing member and the substrate;
    With
    The counter member is held by the counter member transport mechanism at the first position, is spaced upward from the substrate holding unit, is held by the substrate holding unit at the second position, and rotates the substrate. Rotate with the substrate holder by the mechanism,
    With the control by the control unit, the first processing liquid is supplied to the substrate through the counter member opening in a state where the first processing liquid nozzle is located at the supply position, and the first processing liquid nozzle is Moved from the supply position to the retracted position, the second processing liquid nozzle is moved from the retracted position to the supply position, and the second processing liquid is supplied to the substrate through the counter member opening ;
    The opposing member transport mechanism is
    A counter member holding portion for holding the counter member;
    An opposing member holding part moving mechanism for retracting the opposing member holding part from above the opposing member in a state where the opposing member is located at the second position;
    With
    With the opposing member holding portion retracted, the first processing liquid nozzle or the second processing liquid nozzle is located at the supply position,
    The substrate processing apparatus , wherein gas from the gas supply unit is supplied from the first processing liquid nozzle or the second processing liquid nozzle located at the supply position .
  4. A substrate processing apparatus according to any one of claims 1 to 3 ,
    The opposing member is
    A counter member main body facing the top surface of the substrate and having the counter member opening provided in the central portion;
    A cylindrical held portion that protrudes upward from the periphery of the counter member opening of the counter member main body and is held by the counter member transport mechanism;
    With
    The held portion is
    A cylindrical flange connecting portion connected to the opposing member body in the vicinity of the opposing member opening;
    An opposing member flange portion extending radially outward from an upper end portion of the flange connection portion;
    With
    The opposing member transport mechanism holds the opposing member in contact with the opposing member flange portion from below,
    The substrate processing apparatus, wherein the first processing liquid nozzle and the second processing liquid nozzle are inserted from an upper opening of the held portion at the supply position.
  5. The substrate processing apparatus according to claim 4 ,
    The front end of the first processing liquid nozzle and the front end of the second processing liquid nozzle are positioned above the lower end edge of the opposed member opening or at the same position as the lower end edge in the vertical direction at the supply position. board processing apparatus characterized by.
  6. A substrate processing apparatus according to any one of claims 1 to 5 ,
    The substrate processing apparatus further comprising a nozzle cleaning unit that cleans the first processing liquid nozzle located at the retreat position.
  7. A substrate holding portion for holding the substrate in a horizontal state; a counter member facing the upper surface of the substrate and having a counter member opening provided in a central portion; and holding the counter member; A counter member transport mechanism that moves relative to the substrate holder between a position and a second position; and a first processing liquid that is supplied to the upper surface of the substrate via a first processing liquid nozzle. A first processing liquid supply section; a second processing liquid supply section for supplying a second processing liquid to the upper surface of the substrate through a second processing liquid nozzle; the first processing liquid nozzle and the second processing liquid nozzle; A nozzle moving mechanism that individually moves between a supply position above the opening of the facing member and a respective retracted position around the substrate holding portion; and the substrate about the central axis that faces the vertical direction. Substrate rotation mechanism that rotates with the holding unit , A substrate processing method for processing a substrate in a substrate processing apparatus and a gas supply unit for supplying a gas to the space between the substrate and the opposing member,
    The counter member is held by the counter member transport mechanism at the first position, is spaced upward from the substrate holding unit, is held by the substrate holding unit at the second position, and rotates the substrate. Rotate with the substrate holder by the mechanism,
    The substrate processing method comprises:
    a) moving the counter member from the first position to the second position;
    b) supplying the first processing liquid from the first processing liquid nozzle located at the supply position to the substrate through the counter member opening;
    c) moving the first treatment liquid nozzle from the supply position to the retracted position;
    d) moving the second treatment liquid nozzle from the retracted position to the supply position;
    e) supplying the second processing liquid to the substrate through the facing member opening;
    Equipped with a,
    In the step b) and the step e), the first processing liquid nozzle and the second processing liquid nozzle are provided in the counter member transport mechanism above the counter member opening at the supply position. The substrate processing method characterized by being inserted in .
  8. A substrate holding portion for holding the substrate in a horizontal state; a counter member facing the upper surface of the substrate and having a counter member opening provided in a central portion; and holding the counter member; A counter member transport mechanism that moves relative to the substrate holder between a position and a second position; and a first processing liquid that is supplied to the upper surface of the substrate via a first processing liquid nozzle. A first processing liquid supply section; a second processing liquid supply section for supplying a second processing liquid to the upper surface of the substrate through a second processing liquid nozzle; the first processing liquid nozzle and the second processing liquid nozzle; A nozzle moving mechanism that individually moves between a supply position above the opening of the facing member and a respective retracted position around the substrate holding portion; and the substrate about the central axis that faces the vertical direction. Substrate rotation mechanism that rotates with the holding unit , A substrate processing method for processing a substrate in a substrate processing apparatus and a gas supply unit for supplying a gas to the space between the substrate and the opposing member,
    The counter member is held by the counter member transport mechanism at the first position, is spaced upward from the substrate holding unit, is held by the substrate holding unit at the second position, and rotates the substrate. Rotate with the substrate holder by the mechanism,
    The substrate processing method comprises:
    a) moving the counter member from the first position to the second position;
    b) supplying the first processing liquid from the first processing liquid nozzle located at the supply position to the substrate through the counter member opening;
    c) moving the first treatment liquid nozzle from the supply position to the retracted position;
    d) moving the second treatment liquid nozzle from the retracted position to the supply position;
    e) supplying the second processing liquid to the substrate through the facing member opening;
    Equipped with a,
    The counter member transport mechanism includes a counter member holding unit that holds the counter member;
    A step of retracting the facing member holding portion from above the facing member between the step a) and the step b);
    In the step b), gas from the gas supply unit is supplied from the first treatment liquid nozzle,
    In the step e), a gas from the gas supply unit is supplied from the second processing liquid nozzle .
  9. A substrate processing method according to claim 7 or 8 ,
    In parallel with the step d) or the step e), the substrate processing method further comprises a step of cleaning the first processing liquid nozzle located at the retracted position.
JP2015025718A 2015-02-12 2015-02-12 Substrate processing apparatus and substrate processing method Active JP6491900B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015025718A JP6491900B2 (en) 2015-02-12 2015-02-12 Substrate processing apparatus and substrate processing method

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2015025718A JP6491900B2 (en) 2015-02-12 2015-02-12 Substrate processing apparatus and substrate processing method
TW105103499A TWI661479B (en) 2015-02-12 2016-02-03 Substrate processing apparatus, substrate processing system, and substrate processing method
CN201910393352.0A CN110137107A (en) 2015-02-12 2016-02-04 Substrate board treatment, base plate processing system and substrate processing method using same
CN201910393356.9A CN110010532A (en) 2015-02-12 2016-02-04 Substrate board treatment
CN201610078393.7A CN105895554B (en) 2015-02-12 2016-02-04 Substrate board treatment and substrate processing method using same
CN201910395828.4A CN110010533A (en) 2015-02-12 2016-02-04 Substrate board treatment and substrate processing method using same
US15/016,411 US20160240401A1 (en) 2015-02-12 2016-02-05 Substrate processing apparatus, substrate processing system, and substrate processing method
KR1020160015850A KR20160099499A (en) 2015-02-12 2016-02-11 Substrate processing apparatus, substrate processing system and substrate processing method
US15/977,124 US20180261475A1 (en) 2015-02-12 2018-05-11 Substrate processing apparatus, substrate processing system, and substrate processing method

Publications (2)

Publication Number Publication Date
JP2016149459A JP2016149459A (en) 2016-08-18
JP6491900B2 true JP6491900B2 (en) 2019-03-27

Family

ID=56691320

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015025718A Active JP6491900B2 (en) 2015-02-12 2015-02-12 Substrate processing apparatus and substrate processing method

Country Status (1)

Country Link
JP (1) JP6491900B2 (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003077808A (en) * 2001-09-04 2003-03-14 Tokyo Electron Ltd Substrate treating apparatus and substrate treating method
JP4179593B2 (en) * 2002-08-21 2008-11-12 大日本スクリーン製造株式会社 Substrate peripheral processing apparatus and substrate peripheral processing method
JP5151629B2 (en) * 2008-04-03 2013-02-27 東京エレクトロン株式会社 Substrate cleaning method, substrate cleaning apparatus, developing method, developing apparatus, and storage medium
JP2013207272A (en) * 2012-03-29 2013-10-07 Dainippon Screen Mfg Co Ltd Substrate processing apparatus
JP5978071B2 (en) * 2012-08-31 2016-08-24 株式会社Screenホールディングス Substrate processing equipment
JP2014194965A (en) * 2013-03-28 2014-10-09 Dainippon Screen Mfg Co Ltd Substrate processing apparatus

Also Published As

Publication number Publication date
JP2016149459A (en) 2016-08-18

Similar Documents

Publication Publication Date Title
KR101562139B1 (en) Substrate processing apparatus and substrate processing method
US8371318B2 (en) Liquid processing apparatus, liquid processing method, and storage medium
US6669808B2 (en) Substrate processing apparatus and substrate processing method
KR101062530B1 (en) Liquid treatment device and liquid treatment method
KR100897428B1 (en) Substrate cleaning apparatus and substrate cleaning method
JP4425913B2 (en) Substrate cleaning method and computer-readable storage medium
US7326299B2 (en) Process liquid supply nozzle, process liquid supply device and nozzle cleaning method
KR100796709B1 (en) Device for liquid treatment of wafer-shaped articles
US6589359B2 (en) Cleaning method and cleaning apparatus for substrate
KR101490538B1 (en) Liquid processing apparatus and liquid processing method
KR101883013B1 (en) Substrate processing apparatus, substrate processing method and computer-readable storage medium
KR100855129B1 (en) Single peace type substrate cleaning method
US8361234B2 (en) Substrate treatment apparatus
JP2005340781A (en) Proximity meniscus manifold
JP4018958B2 (en) Substrate processing equipment
JP2005191511A (en) Substrate processing equipment and substrate processing method
US9576787B2 (en) Substrate treatment method
US7802579B2 (en) Apparatus and method for treating substrates
KR20150088828A (en) Substrate supporting apparatus
JP4397299B2 (en) Substrate processing equipment
JP2006032891A (en) Substrate processing apparatus
US8122899B2 (en) Apparatus and method for treating substrate
US8393808B2 (en) Developing method
JP4657090B2 (en) Substrate processing equipment
JP5975563B2 (en) Substrate processing apparatus and substrate processing method

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20171222

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20180824

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180906

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20181025

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20190131

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20190304

R150 Certificate of patent or registration of utility model

Ref document number: 6491900

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150