CN116479524A - Air supporting rotary mechanism for epitaxial equipment - Google Patents
Air supporting rotary mechanism for epitaxial equipment Download PDFInfo
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- CN116479524A CN116479524A CN202310465667.8A CN202310465667A CN116479524A CN 116479524 A CN116479524 A CN 116479524A CN 202310465667 A CN202310465667 A CN 202310465667A CN 116479524 A CN116479524 A CN 116479524A
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- air
- base
- air flotation
- floating
- flotation
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 73
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 73
- 239000010439 graphite Substances 0.000 claims abstract description 73
- 239000012159 carrier gas Substances 0.000 claims abstract description 62
- 238000005188 flotation Methods 0.000 claims description 110
- 239000007789 gas Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses an air floatation rotating mechanism for epitaxial equipment, which comprises the following components: the device comprises a graphite base, an air-floating support ring and an air-floating base, wherein one end of the air-floating support ring is arranged in the graphite base, the other end of the air-floating support ring is arranged in the air-floating base, a plurality of independent carrier gas channels are arranged in the graphite base, a plurality of air-floating holes communicated with the carrier gas channels are uniformly distributed at the top of the graphite base, guide grooves are formed in the bottom of the air-floating base, and the top of the air-floating base is used as a carrier plate; the air-float carrier gas is sprayed out through the air-float hole after entering the graphite base through the carrier gas channel, and supports the air-float base, and the air-float carrier gas acts on the diversion trench to drive the air-float base to rotate around the air-float support ring. The invention has the advantages of compact structure, smooth rotation, uniform stress and the like, solves the problems of poor carrier gas transmission time, aggravated rotation shaking of the air bearing base, accelerated loss of graphite pieces, large temperature deviation and the like caused by unreasonable arrangement of carrier gas channels in the graphite base, improves the rotation stability of the air bearing base, and prolongs the service life of equipment.
Description
Technical Field
The invention belongs to the technical field of epitaxial equipment, and particularly relates to an air floatation rotating mechanism for epitaxial equipment.
Background
The epitaxial furnace is a key device for preparing epitaxial wafers. For epitaxial growth, uniform temperature and air flow distribution is the basis for preparing epitaxial wafers with uniform doping concentration, low defect density and high quality. In order to compensate for the non-uniformity of the temperature field and the air flow field, a substrate rotation method is generally adopted, so that the moving paths of all points on the substrate in the reaction chamber are not fixed, the moving paths can circularly pass through areas with different temperatures and air flow densities, the growth conditions of all points on the substrate tend to be consistent, and the purpose of uniform and consistent film grown on the surface of the whole substrate is achieved.
At present, an epitaxial furnace is characterized in that an air-floating rotary base is arranged on a graphite base with an air-floating hole through a central small shaft, a substrate is firstly arranged in a slide disc, the slide disc is arranged on the air-floating rotary base, carrier gas is used for aerating and floating the air-floating hole of the graphite base and reaches the bottom of the rotary base through the air-floating hole, the air flow firstly supports the air-floating base, and friction force is generated by an air guide groove at the back of the air-floating base to enable the air-floating base to rotate, so that the substrate is rotated.
Because only a central point is supported, the air-float rotating base rotates to have high and low shaking, irregular disturbance is generated on the along-path airflow, and the stability of the epitaxial growth environment is damaged.
Meanwhile, the air floatation path in the graphite base is unreasonable, so that time deviation exists when air floatation gas reaches the back surface of the air floatation rotating base, the rotating shaking of the air floatation base is aggravated, and when gas (such as hydrogen) with etching effect is used as air floatation carrier gas, inconsistent abrasion phenomenon of small holes at outlets of different air floatation paths of the graphite base can be caused, self-loss of a graphite piece is accelerated, the air floatation base is stopped rotating when serious loss occurs, meanwhile, the graphite base has larger temperature difference in the radial direction, the phenomenon that the temperature is gradually decreased from the center to the edge is presented, namely, the conventional air floatation rotating mechanism does not have the capability of improving the temperature of the graphite base.
In addition, the current air-float rotating mechanism only allows a single type of air-float gas to be introduced, which is unfavorable for the fine regulation and control of the temperature of the epitaxial substrate edge growth area and synchronous air-float stable rotation, because the hydrogen is lighter and is more favorable for the lifting and rotation of the air-float base, but the cooling effect of the hydrogen is more obvious and is unfavorable for the control of the substrate edge temperature field.
Finally, the air floatation driving force under the current air floatation path is smaller, and the air floatation base in the large-size epitaxial furnace is larger in size and larger in weight, and the phenomenon of unsmooth rotation or non-rotation exists.
Disclosure of Invention
The invention aims to solve the technical problem of overcoming the defects of the prior art and providing the air floatation rotating mechanism for the epitaxial equipment, which has the advantages of compact structure, smooth rotation, uniform stress and long service life.
In order to solve the technical problems, the invention adopts the following technical scheme:
an air-floating rotary mechanism for epitaxial equipment, comprising: the device comprises a graphite base, an air-floating support ring and an air-floating base, wherein one end of the air-floating support ring is arranged in the graphite base, the other end of the air-floating support ring is arranged in the air-floating base, a plurality of independent carrier gas channels are arranged in the graphite base, a plurality of air-floating holes communicated with the carrier gas channels are uniformly distributed at the top of the graphite base, a diversion trench is arranged at the bottom of the air-floating base, and a slide tray for placing a bearing substrate is arranged at the top of the air-floating base; the air-float carrier gas enters the graphite base through the carrier gas channel and then is sprayed out through the air-float hole so as to support the air-float base, and the air-float carrier gas acts on the diversion trench of the air-float base so as to drive the air-float base to rotate around the air-float support ring.
As a further improvement of the invention, the carrier gas channel comprises a main air flotation channel and an auxiliary air flotation channel which are used for independently controlling air inflow, and the input end of the main air flotation channel and the input end of the auxiliary air flotation channel are arranged on the side part of the graphite base side by side; the output end of the main air floatation channel is communicated with a plurality of air floatation holes in the center of the top of the graphite base, and air floatation carrier gas conveyed by the main air floatation channel is used for supporting the air floatation base and driving the air floatation base to rotate around the air floatation support ring; the output end of the auxiliary air floatation channel is communicated with a plurality of air floatation holes on two sides of the top of the graphite base, and air floatation carrier gas conveyed by the auxiliary air floatation channel is used for driving the air floatation base to rotate around the air floatation support ring.
As a further improvement of the invention, the center of the top of the graphite base is provided with a gas collecting cavity, the output end of the main gas floating channel is communicated with the bottom of the gas collecting cavity through a through hole, the top of the gas collecting cavity is provided with a second gas floating hole and a plurality of first gas floating holes, the second gas floating hole is positioned at the center of the top of the gas collecting cavity, the gas floating carrier gas sprayed out of the second gas floating hole is used for supporting the gas floating base, the plurality of first gas floating holes uniformly encircle the periphery of the second gas floating hole, and the gas floating carrier gas sprayed out of the first gas floating holes is used for supporting the gas floating base and driving the gas floating base to rotate around the gas floating supporting ring.
As a further improvement of the invention, a first auxiliary air flotation channel and a second auxiliary air flotation channel are further arranged in the graphite base, the output ends of the auxiliary air flotation channels are respectively connected with the input ends of the first auxiliary air flotation channel and the second auxiliary air flotation channel, the two sides of the top of the graphite base are symmetrically provided with a first auxiliary air flotation hole and a second auxiliary air flotation hole, the output end of the first auxiliary air flotation channel is communicated with the first auxiliary air flotation hole, the output end of the second auxiliary air flotation channel is communicated with the second auxiliary air flotation hole, and air flotation carrier gas sprayed by the first auxiliary air flotation hole and the second auxiliary air flotation hole is used for driving the air flotation base to rotate around the air flotation support ring.
As a further improvement of the invention, the axis of the second air flotation hole is vertically upwards, the axis of the first air flotation hole and the axis of the first auxiliary air flotation hole form an included angle with the axis of the second air flotation hole, and the included angle between the axis of the first air flotation hole and the axis of the second air flotation hole is smaller than the included angle between the axis of the first auxiliary air flotation hole and the axis of the second air flotation hole.
As a further improvement of the invention, a first supporting ring groove matched with the air supporting ring is arranged at the top of the graphite base, the first auxiliary air supporting holes and the second auxiliary air supporting holes are positioned at the outer side of the first supporting ring groove, and the first air supporting holes and the second air supporting holes are positioned at the inner side of the first supporting ring groove.
As a further improvement of the invention, a plurality of supporting steps are uniformly distributed on the top of the air floatation supporting ring.
As a further improvement of the invention, the number of the supporting steps is more than 3, and the area ratio of the total area of the supporting steps on the air-bearing supporting ring is less than 30%.
As a further improvement of the invention, a second supporting ring groove matched with the air-floating supporting ring is arranged at the bottom of the air-floating base.
As a further improvement of the invention, a plurality of first diversion trenches and a plurality of second diversion trenches are also arranged at the bottom of the air floatation base in a crossing way, the first diversion trenches and the second diversion trenches extend from the edge of the air floatation base to the center, the first diversion trenches extend to the inner side of the second supporting ring grooves, and the second diversion trenches extend to the outer side of the second supporting ring grooves; the first diversion trench is matched with the main air flotation channel, and the second diversion trench is matched with the auxiliary air flotation channel.
Compared with the prior art, the invention has the advantages that:
according to the air-floating rotating mechanism for the epitaxial equipment, the air-floating base is connected with the graphite base through the air-floating supporting ring, the air-floating base rotates around the air-floating supporting ring with multiple supporting points, and the supporting and rotating stability is remarkably improved; meanwhile, a plurality of air floatation channels with identical paths are arranged in the graphite base, the air floatation channels are identical in paths, so that the time for the air floatation carrier gas to reach the diversion trench at the bottom of the air floatation base is ensured to be identical, and the rotation stability is further improved; the multiple air floatation channel paths distributed inside and outside the support ring groove on the graphite base provide possibility for flexible use of air floatation carrier gas, the adjustment of the rotating speed of the air floatation rotating base and the improvement of the temperature uniformity of a growing area are well realized by respectively adjusting the types and the flow rates of the gases in different channels, and the bottom of the air floatation base is provided with the multiple diversion grooves and the larger installation grooves, so that the weight of the air floatation base is greatly reduced, the large-size air floatation base is ensured to stably rotate, and the air floatation base is better suitable for the rotation of the larger and heavier air floatation base in the 8-inch epitaxial furnace. The invention well solves the problems of rotation and shaking of the substrate, unsmooth rotation, short service life of the mechanism and the like.
Drawings
Fig. 1 is a schematic diagram of the explosion structure of the air-floating rotary mechanism for epitaxial equipment of the present invention.
Fig. 2 is a schematic structural diagram of a graphite susceptor according to the present invention.
Fig. 3 is a schematic diagram of the structural principle at a in fig. 2.
Fig. 4 is a schematic diagram of a schematic cross-sectional structure of a graphite susceptor according to the present invention.
Fig. 5 is a schematic structural diagram of an air-floating support ring according to the present invention.
Fig. 6 is a schematic top view of the air bearing ring according to the present invention.
Fig. 7 is a schematic structural diagram of the bottom of the air-floating base in the present invention.
Legend description: 1. a graphite base; 101. a main air floatation channel; 102. an auxiliary air floatation channel; 103. a first auxiliary air-bearing channel; 104. a first auxiliary air-float hole; 105. a second auxiliary air-bearing channel; 106. a second auxiliary air floatation hole; 107. a first support ring groove; 108. a first air floatation hole; 109. a second air floatation hole; 110. a through hole; 111. a gas collection chamber; 2. an air bearing ring; 21. a support step; 3. an air floatation base; 31. a first diversion trench; 32. a second supporting ring groove; 33. and a second diversion trench.
Detailed Description
The invention is further described below in connection with the drawings and the specific preferred embodiments, but the scope of protection of the invention is not limited thereby.
Examples
As shown in fig. 1 to 7, the air-floating rotation mechanism for epitaxial equipment of the present invention comprises: the graphite base 1, air supporting ring 2 and air supporting base 3, the one end of air supporting ring 2 is installed in graphite base 1, and the other end of air supporting ring 2 is installed in air supporting base 3. The graphite base 1 is internally provided with a plurality of independent carrier gas channels, and a plurality of air floatation holes communicated with the carrier gas channels are uniformly distributed at the top of the graphite base 1. The bottom of the air-floating base 3 is provided with a diversion trench, and the top of the air-floating base 3 is provided with a carrier plate for placing a bearing substrate. The air-float carrier gas enters the graphite base 1 through the carrier gas channel and then is sprayed out through the air-float holes to support the air-float base 3, and the air-float carrier gas acts on the diversion trench of the air-float base 3 to drive the air-float base 3 to rotate around the air-float support ring 2.
In this embodiment, the carrier gas channel includes a main air-float channel 101 and an auxiliary air-float channel 102 that independently control the intake air. The input end of the main air flotation channel 101 and the input end of the auxiliary air flotation channel 102 are arranged on the side part of the graphite base 1 side by side; the output end of the main air floatation channel 101 is communicated with a plurality of air floatation holes in the center of the top of the graphite base 1, and air floatation carrier gas conveyed by the main air floatation channel 101 is used for supporting the air floatation base 3 and driving the air floatation base 3 to rotate around the air floatation support ring 2; the output end of the auxiliary air-floating channel 102 is communicated with a plurality of air-floating holes on two sides of the top of the graphite base 1, and the air-floating carrier gas conveyed by the auxiliary air-floating channel 102 is used for driving the air-floating base 3 to rotate around the air-floating support ring 2. The air-floating base 3 is fixed on the graphite base 1 through the air-floating support ring 2, and the air-floating carrier gas pipeline is respectively connected with the main air-floating channel 101 and the auxiliary air-floating channel 102 on the end surface of the graphite base 1.
Different kinds of gas can be introduced into the main air flotation channel 101 and the auxiliary air flotation channel 102, the main air flotation channel 101 is preferably hydrogen gas as carrier gas, the auxiliary air flotation channel 102 is preferably argon gas as carrier gas, and the fine adjustment and control of the temperature fields of the central area and the edge area of the graphite base 1 are realized while smooth rotation of the air flotation base 3 is ensured. Further, the main air floatation channel 101 and the auxiliary air floatation channel 102 are respectively and independently connected to a carrier gas pipeline, and can selectively start air floatation according to the weight of the 6/8 inch air floatation base.
As shown in fig. 2 to 4, in this embodiment, a gas collecting chamber 111 is disposed in the center of the top of the graphite base 1, the output end of the main air-floating channel 101 is communicated with the bottom of the gas collecting chamber 111 through a through hole 110, a second air-floating hole 109 and a plurality of first air-floating holes 108 are disposed on the top of the gas collecting chamber 111, the second air-floating hole 109 is located in the center of the top of the gas collecting chamber 111, the air-floating carrier gas sprayed from the second air-floating hole 109 is used for supporting the air-floating base 3, six first air-floating holes 108 evenly surround the periphery of the second air-floating hole 109, and the air-floating carrier gas sprayed from the first air-floating hole 108 is used for supporting the air-floating base 3 and driving the air-floating base 3 to rotate around the air-floating support ring 2.
As shown in fig. 2, in this embodiment, the graphite base 1 is further provided with a first auxiliary air-floating channel 103 and a second auxiliary air-floating channel 105, and the first auxiliary air-floating channel 103 and the second auxiliary air-floating channel 105 are symmetrically disposed on the left and right sides of the interior of the graphite base 1. The output end of the auxiliary air flotation channel 102 is respectively connected with the input ends of a first auxiliary air flotation channel 103 and a second auxiliary air flotation channel 105, a first auxiliary air flotation hole 104 and a second auxiliary air flotation hole 106 are symmetrically arranged on two sides of the top of the graphite base 1, the output end of the first auxiliary air flotation channel 103 is communicated with the first auxiliary air flotation hole 104, the output end of the second auxiliary air flotation channel 105 is communicated with the second auxiliary air flotation hole 106, and air flotation carrier gas sprayed out of the first auxiliary air flotation hole 104 and the second auxiliary air flotation hole 106 is used for driving the air flotation base 3 to rotate around the air flotation support ring 2.
In this embodiment, the axis of the second air-floating hole 109 is vertically upward, and the second air-floating hole 109 is vertically upward, which is beneficial to the suspension of the air-floating base 3. The first auxiliary air-floating hole 104, the second auxiliary air-floating hole 106 and the first air-floating hole 108 are all inclined at a certain angle, and the inclination angles of the first auxiliary air-floating hole 104 and the second auxiliary air-floating hole 106 are the same. The carrier gas sprayed from the first air floatation holes 108 drives the air floatation base 3 to rotate and simultaneously suspends the air floatation base 3, and the carrier gas sprayed from the first auxiliary air floatation holes 104 and the second auxiliary air floatation holes 106 plays a role in driving the air floatation base 3 to rotate. The axis of the first air floatation hole 108 and the axis of the first auxiliary air floatation hole 104 have included angles with the axis of the second air floatation hole 109, and the included angle between the axis of the first air floatation hole 108 and the axis of the second air floatation hole 109 is smaller than the included angle between the axis of the first auxiliary air floatation hole 104 and the axis of the second air floatation hole 109.
In this embodiment, the air-floating holes in the center and the air-floating holes in the edge of the graphite base 1 are respectively different from the normal angles of the surface of the graphite base 1, and the air-floating holes in the center area are more used for suspending the air-floating base 3, and the air-floating holes in the edge area are more used for enabling the air-floating base 3 to rotate at a rapid temperature.
In this embodiment, the graphite base 1 has a plurality of air-floating channels, and the distance from the air-floating carrier gas to each air-floating hole is uniform. Different kinds of air-bearing gas can be independently introduced into a plurality of air-bearing channels in the graphite base 1, and the air-bearing gas can be introduced into the central area or the edge area only when the lower rotating speed is needed, and the air-bearing gas can be introduced into the central area and the edge area simultaneously when the higher rotating speed is needed. In addition, lighter hydrogen is introduced into the central area to ensure the suspension and rotation of the air bearing base 3, meanwhile, the higher temperature of the central area is reduced, and argon is introduced into the edge area to reduce heat dissipation, so that the temperature uniformity of the epitaxial growth area is further improved.
As shown in fig. 2, in this embodiment, a first supporting ring groove 107 matching with the air-floating supporting ring 2 is provided on the top of the graphite base 1, the first auxiliary air-floating hole 104 and the second auxiliary air-floating hole 106 are located outside the first supporting ring groove 107, and the first air-floating hole 108 and the second air-floating hole 109 are located inside the first supporting ring groove 107. In this embodiment, the top portion of the graphite susceptor 1 is internally and externally surrounded by the first support ring groove 107, and the temperature of the graphite susceptor 1 is adjusted by the magnitude and kind of the flow of the carrier gas. Meanwhile, the distribution periphery of the inner and outer rings can be determined according to the size of the air bearing base 3, for example, when the size of the air bearing base 3 is 6 inches, carrier gas can be only introduced into the inner side of the first supporting ring groove 107, that is, only the main air bearing channel 101 is used for inputting air bearing carrier gas; when the size of the air-floating base 3 is 8 inches, the carrier gas is introduced into the inner side and the outer side of the first supporting ring groove 107, that is, the main air-floating channel 101 and the auxiliary air-floating channel 102 are both input with the air-floating carrier gas, and the kinds and the air flow sizes of the carrier gas conveyed in the main air-floating channel 101 and the auxiliary air-floating channel 102 are independently controlled.
Further, the air supporting ring 2 is a graphite supporting ring with a waist-shaped cross section, at least three supporting steps 21 are uniformly distributed on the top of the air supporting ring 2, and the area occupied ratio of the total area of the supporting steps 21 on the air supporting ring 2 is less than 30%. The air-floating carrier gas sprayed out of the central area of the graphite base 1 can escape from the air-floating support ring 2, so that the air pressure is prevented from being concentrated.
As shown in fig. 5 and 6, in this embodiment, four support steps 21 are disposed on the air-floating support ring 2, and the included angle of a single support step 21 on the ring is 20 °, so that the air-floating base 3 can be stably supported without affecting smooth ejection of the air-floating carrier.
In this embodiment, a plurality of support steps 21 are uniformly distributed on the air-floating support ring 2, the proportion occupied by each support step 21 on the circumference is smaller, and a certain angle is uniformly spaced among the plurality of support steps 21, so that the stability of supporting the air-floating base 3 is ensured, and the air-floating carrier gas in the center of the graphite base is also convenient to escape.
In this embodiment, a second supporting ring groove 32 matched with the air-floating supporting ring 2 is provided at the bottom of the air-floating base 3. Further, a plurality of first diversion trenches 31 and a plurality of second diversion trenches 33 are also arranged at the bottom of the air-floating base 3 in a crossing manner, the first diversion trenches 31 and the second diversion trenches 33 extend from the edge of the air-floating base 3 to the center, the first diversion trenches 31 extend to the inner side of the second supporting ring grooves 32, and the second diversion trenches 33 extend to the outer side of the second supporting ring grooves 32. The first diversion trench 31 is matched with the main air flotation channel 101, and the second diversion trench 33 is matched with the auxiliary air flotation channel 102.
After the air-floating carrier gas conveyed by the main air-floating channel 101 reaches the center of the graphite base 1, the air-floating carrier gas reaches the air collecting cavity 111 in the center of the graphite base 1 through the upward through hole 110, part of air is sprayed out through the second air-floating hole 109, so that the air-floating base 3 is supported, and the rest of air is sprayed out through the first air-floating hole 108 and acts on the first diversion trench 31 at the bottom of the air-floating base 3 to drive the air-floating base 3 to rotate around the air-floating support ring 2.
After the air-floating carrier gas entering from the auxiliary air-floating channel 102 reaches the center of the graphite base 1, the air-floating carrier gas passes through the first auxiliary air-floating channel 103 and the second auxiliary air-floating channel 105 respectively and then acts on the second diversion trench 33 on the back surface of the air-floating base 3 through the first auxiliary air-floating hole 104 and the second auxiliary air-floating hole 106, so that the air-floating base 3 is driven to rotate around the air-floating support ring 2.
Through set up many different air guide grooves alternately in air supporting base bottom, with the air supporting passageway looks adaptation of the interior different route of graphite base 1, guaranteed the stable rotation of air supporting base of different sizes, weight, improved the gas utilization rate moreover high.
While the invention has been described with reference to preferred embodiments, it is not intended to be limiting. Any person skilled in the art can make many possible variations and modifications to the technical solution of the present invention or equivalent embodiments using the method and technical solution disclosed above without departing from the spirit and technical solution of the present invention. Therefore, any simple modification, equivalent substitution, equivalent variation and modification of the above embodiments according to the technical substance of the present invention, which do not depart from the technical solution of the present invention, still fall within the scope of the technical solution of the present invention.
Claims (10)
1. An air-float rotating mechanism for an epitaxial device, comprising: the device comprises a graphite base (1), an air floatation supporting ring (2) and an air floatation base (3), wherein one end of the air floatation supporting ring (2) is arranged in the graphite base (1), the other end of the air floatation supporting ring (2) is arranged in the air floatation base (3), a plurality of independent carrier gas channels are arranged in the graphite base (1), a plurality of air floatation holes communicated with the carrier gas channels are uniformly distributed at the top of the graphite base (1), a diversion trench is arranged at the bottom of the air floatation base (3), and a carrier plate for placing a bearing substrate is arranged at the top of the air floatation base (3); the air-floating carrier gas enters the graphite base (1) through the carrier gas channel and then is sprayed out through the air-floating holes so as to support the air-floating base (3), and the air-floating carrier gas acts on the diversion trench of the air-floating base (3) so as to drive the air-floating base (3) to rotate around the air-floating support ring (2).
2. The air flotation rotating mechanism for the epitaxial device according to claim 1, wherein the carrier gas channel comprises a main air flotation channel (101) and an auxiliary air flotation channel (102) which independently control air inlet, and an input end of the main air flotation channel (101) and an input end of the auxiliary air flotation channel (102) are arranged on the side part of the graphite base (1) side by side; the output end of the main air floatation channel (101) is communicated with a plurality of air floatation holes in the center of the top of the graphite base (1), and air floatation carrier gas conveyed by the main air floatation channel (101) is used for supporting the air floatation base (3) and driving the air floatation base (3) to rotate around the air floatation support ring (2); the output end of the auxiliary air floatation channel (102) is communicated with a plurality of air floatation holes on two sides of the top of the graphite base (1), and air floatation carrier gas conveyed by the auxiliary air floatation channel (102) is used for driving the air floatation base (3) to rotate around the air floatation support ring (2).
3. The air flotation rotating mechanism for the epitaxial equipment according to claim 2, wherein the center of the top of the graphite base (1) is provided with a gas collection cavity (111), the output end of the main air flotation channel (101) is communicated with the bottom of the gas collection cavity (111) through a through hole (110), the top of the gas collection cavity (111) is provided with a second air flotation hole (109) and a plurality of first air flotation holes (108), the second air flotation hole (109) is positioned at the center of the top of the gas collection cavity (111), the air flotation carrier gas sprayed out by the second air flotation hole (109) is used for supporting the air flotation base (3), the plurality of first air flotation holes (108) evenly encircle the periphery of the second air flotation hole (109), and the air flotation carrier gas sprayed out by the first air flotation hole (108) is used for supporting the air flotation base (3) and driving the air flotation base (3) to rotate around the air flotation support ring (2).
4. The air flotation rotating mechanism for epitaxial equipment according to claim 3, wherein a first auxiliary air flotation channel (103) and a second auxiliary air flotation channel (105) are further arranged inside the graphite base (1), the output ends of the auxiliary air flotation channels (102) are respectively connected with the input ends of the first auxiliary air flotation channel (103) and the second auxiliary air flotation channel (105), first auxiliary air flotation holes (104) and second auxiliary air flotation holes (106) are symmetrically formed in the two sides of the top of the graphite base (1), the output ends of the first auxiliary air flotation channels (103) are communicated with the first auxiliary air flotation holes (104), the output ends of the second auxiliary air flotation channels (105) are communicated with the second auxiliary air flotation holes (106), and air flotation sprayed out by the first auxiliary air flotation holes (104) and the second auxiliary air flotation holes (106) are used for driving the air flotation base (3) to rotate around the air flotation support ring (2).
5. The air flotation rotary mechanism for an epitaxial device according to claim 4, wherein the axis of the second air flotation hole (109) is vertically upward, the axis of the first air flotation hole (108) and the axis of the first auxiliary air flotation hole (104) are both at an angle with the axis of the second air flotation hole (109), and the angle between the axis of the first air flotation hole (108) and the axis of the second air flotation hole (109) is smaller than the angle between the axes of the first auxiliary air flotation hole (104) and the second air flotation hole (109).
6. The air flotation rotating mechanism for the epitaxial equipment according to claim 4, wherein a first support ring groove (107) matched with the air flotation support ring (2) is formed in the top of the graphite base (1), the first auxiliary air flotation holes (104) and the second auxiliary air flotation holes (106) are located on the outer side of the first support ring groove (107), and the first air flotation holes (108) and the second air flotation holes (109) are located on the inner side of the first support ring groove (107).
7. The air-floating rotary mechanism for epitaxial equipment according to any one of claims 1 to 6, wherein a plurality of supporting steps (21) are uniformly distributed on the top of the air-floating supporting ring (2).
8. The air-floating rotation mechanism for an epitaxial device according to claim 7, characterized in that the number of the supporting steps (21) is more than 3, and the area ratio of the total area of the plurality of supporting steps (21) on the air-floating supporting ring (2) is less than 30%.
9. The air-floating rotary mechanism for the epitaxial device according to any one of claims 2 to 6, wherein a second supporting ring groove (32) matched with the air-floating supporting ring (2) is arranged at the bottom of the air-floating base (3).
10. The air flotation rotating mechanism for the epitaxial device according to claim 9, wherein a plurality of first diversion trenches (31) and a plurality of second diversion trenches (33) are also arranged at the bottom of the air flotation base (3) in a crossing manner, the first diversion trenches (31) and the second diversion trenches (33) extend from the edge of the air flotation base (3) to the center, the first diversion trenches (31) extend to the inner side of the second support ring groove (32), and the second diversion trenches (33) extend to the outer side of the second support ring groove (32); the first diversion trench (31) is matched with the main air flotation channel (101), and the second diversion trench (33) is matched with the auxiliary air flotation channel (102).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310465667.8A CN116479524A (en) | 2023-04-26 | 2023-04-26 | Air supporting rotary mechanism for epitaxial equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310465667.8A CN116479524A (en) | 2023-04-26 | 2023-04-26 | Air supporting rotary mechanism for epitaxial equipment |
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| Publication Number | Publication Date |
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| CN116479524A true CN116479524A (en) | 2023-07-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310465667.8A Pending CN116479524A (en) | 2023-04-26 | 2023-04-26 | Air supporting rotary mechanism for epitaxial equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116968199A (en) * | 2023-09-25 | 2023-10-31 | 无锡星微科技有限公司杭州分公司 | Air-floating rotary table for wafer cutting |
-
2023
- 2023-04-26 CN CN202310465667.8A patent/CN116479524A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116968199A (en) * | 2023-09-25 | 2023-10-31 | 无锡星微科技有限公司杭州分公司 | Air-floating rotary table for wafer cutting |
| CN116968199B (en) * | 2023-09-25 | 2023-12-22 | 无锡星微科技有限公司杭州分公司 | Air-floating rotary table for wafer cutting |
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