CN112501683A - Height adjusting device for quartz crucible in single crystal furnace of semiconductor equipment - Google Patents
Height adjusting device for quartz crucible in single crystal furnace of semiconductor equipment Download PDFInfo
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- CN112501683A CN112501683A CN202011282728.XA CN202011282728A CN112501683A CN 112501683 A CN112501683 A CN 112501683A CN 202011282728 A CN202011282728 A CN 202011282728A CN 112501683 A CN112501683 A CN 112501683A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
The invention discloses a height adjusting device for a quartz crucible in a single crystal furnace of semiconductor equipment, which aims at the problem that starting and stopping of a lifting device can cause vibration to a certain degree, so that silicon solution is easy to spill out of the quartz crucible, and the practicability is poor. When the supporting slide block slides upwards, the supporting slide block is blocked by the air bag group in the mounting groove, and air in the air bag is slowly discharged from one end of the air guide pipe, so that sudden thermal shock caused by sudden starting and stopping of the lifting device is effectively relieved, and silicon solution in the quartz crucible is effectively prevented from shaking and spilling.
Description
Technical Field
The invention relates to the technical field of single crystal furnaces, in particular to a height adjusting device for a quartz crucible in a single crystal furnace of semiconductor equipment.
Background
Currently, a single crystal furnace is an important processing device in semiconductor production equipment, and comprises a quartz crucible as an important processing component of monocrystalline silicon, but in the existing single crystal furnace, the height of the quartz crucible in the single crystal furnace cannot be adjusted, so when the liquid in the quartz crucible is less, the precipitated monocrystalline silicon is positioned at a lower position in the single crystal furnace, the taking-out of the monocrystalline silicon is difficult, the production efficiency is reduced, and the operation steps are complicated. The diameter of the single crystal can be influenced by factors such as temperature, pulling speed and rotating speed, crucible tracking speed and rotating speed, flow rate of protective gas and the like in the growth process. The temperature mainly determines whether the crystal can be formed, and the speed directly influences the inherent quality of the crystal, and the influence can only be known through detection after the single crystal is pulled out. The thermal field with proper temperature distribution not only can lead the single crystal to grow smoothly, but also has higher quality; if the temperature distribution of the thermal field is not reasonable, various defects are easily generated in the process of growing the single crystal, the quality is affected, and the single crystal cannot grow out due to the phenomenon of crystal transformation under serious conditions. Therefore, in the early stage of investing in a single crystal growth enterprise, the most reasonable thermal field must be configured according to growth equipment, so that the quality of the produced single crystal is ensured. In crystal growth analysis and design, experiments and numerical simulation supplement each other. Monocrystalline silicon is used as a relatively active non-metallic element crystal, is an important component of a crystal material, and is at the front of the development of new materials. The monocrystalline silicon material is manufactured by the following processes: quartz sand-metallurgical grade silicon-purification and refining-deposition of polycrystalline silicon ingot-monocrystalline silicon-silicon wafer cutting. The solar photovoltaic power generation and heat supply semiconductor material is mainly used as a semiconductor material and utilizes solar photovoltaic power generation, heat supply and the like.
The prior height adjusting device for the quartz crucible in the single crystal furnace of the semiconductor equipment has the following problems: along with the preparation of monocrystalline silicon, the silicon solution in the quartz crucible can become shallow, and the effective progress of preparation can be guaranteed in quartz crucible's lift, however at the in-process that goes up and down, elevating gear's start-up and stop all can arouse the vibrations of certain degree, lead to silicon solution to spill out from quartz crucible easily, the practicality is relatively poor, and current patent is difficult to solve this type of problem, consequently, need for a height adjusting device for the quartz crucible in semiconductor equipment single crystal growing furnace to solve above-mentioned problem urgently.
Disclosure of Invention
Based on the technical problems that the starting and stopping of the lifting device can cause certain vibration to easily cause silicon solution to spill out of the quartz crucible and the practicability is poor in the conventional height adjusting device for the quartz crucible in the single crystal furnace of the semiconductor equipment, the invention provides the height adjusting device for the quartz crucible in the single crystal furnace of the semiconductor equipment.
In order to achieve the purpose, the invention adopts the following technical scheme:
a height adjusting device for a quartz crucible in a single crystal furnace of semiconductor equipment comprises a furnace body, wherein a threaded rod is connected to the inner wall of the bottom of the furnace body through a bearing, a threaded sleeve is connected to the outer wall of the threaded rod through a thread, a quartz tray is fixedly connected to the top end of the threaded sleeve, a quartz marmite is fixedly connected to the outer wall of the top of the quartz tray, mounting grooves are formed in the inner walls of the two sides of the furnace body, which are close to the central position, respectively, an air bag group is fixedly connected to the inner wall of the top of the two mounting grooves, an air guide pipe is fixedly connected to the outer wall of one side of the air bag group, a supporting slide block is slidably connected to the inner wall of the mounting groove, the top ends of the two supporting slide blocks are fixedly connected to the outer wall of the bottom of the air bag group, connecting, the central position of furnace body bottom outer wall fixedly connected with motor, the one end fixed connection of motor output shaft is in the bottom of threaded rod.
As a still further scheme of the invention: the furnace body is close to all to open on the both sides inner wall of bottom has the spout, two equal sliding connection has the movable block on the inner wall of spout.
As a still further scheme of the invention: the outer walls of the two sides of the threaded sleeve are fixedly connected with limiting rods, and one ends of the two limiting rods are fixedly connected to the outer wall of one side of the two moving blocks.
As a still further scheme of the invention: the inner wall of the furnace body close to the top is fixedly connected with a heat-insulating layer, and the quartz crucible is positioned in the center of the heat-insulating layer.
As a still further scheme of the invention: graphite heaters are fixedly connected to the inner walls of the two sides of the furnace body, a power line is fixedly connected to the outer wall of one side of each graphite heater, and a power plug is fixedly connected to one end of the power line.
As a still further scheme of the invention: the furnace cover is fixedly connected to the outer wall of the top of the furnace body, and the isolation valve is fixedly connected to the central position of the outer wall of the top of the furnace cover.
As a still further scheme of the invention: the top outer wall of the isolation valve is fixedly connected with an upper furnace chamber, the outer wall of one side of the upper furnace chamber is fixedly connected with a hydrogen inlet pipe, and the top end of the upper furnace chamber is fixedly connected with a rotating mechanism.
As a still further scheme of the invention: the outer wall of the bottom of the rotating mechanism is fixedly connected with a lifting rope, and the bottom end of the lifting rope is fixedly connected with a seed crystal clamp.
As a still further scheme of the invention: the furnace body is characterized in that a vacuum air pump is arranged on the outer wall of one side of the furnace body, one end of the vacuum air pump is fixedly connected with a connecting pipe, one end of the connecting pipe is communicated with the interior of the furnace body, and supporting legs are fixedly connected to the periphery of the outer wall of the bottom of the furnace body.
As a still further scheme of the invention: and the outer wall of the bottom of the supporting leg is fixedly connected with an anti-slip pad.
The invention has the beneficial effects that:
1. by arranging the threaded rod, the threaded sleeve and the air bag group, a power plug at one side of the furnace body of the single crystal furnace is connected with a power supply, the graphite heater is started, the silicon solution in the quartz crucible is ensured to keep a stable state, the single crystal silicon is prepared by utilizing the seed crystal clamp connected by the rotating mechanism and the steel wire rope, when the silicon solution in the quartz crucible is consumed for a period of time, the liquid level of the silicon solution is lowered, the motor is started, the motor drives the threaded rod to rotate, the threaded sleeve is connected with the outer wall of the rotating threaded rod in a threaded manner, under the action of the rotating threaded rod, the threaded sleeve is fixed to be lifted, the lifted threaded sleeve can support the quartz tray to support the quartz crucible to move upwards, the connecting rods connected to the two sides of the quartz tray can extrude the supporting slide blocks, the supporting slide blocks are blocked by the air bag, the sudden thermal shock caused by sudden starting and stopping of the lifting device is effectively relieved, and the silicon solution in the quartz crucible is effectively prevented from shaking and spilling;
2. the heat preservation layer and the vacuum air pump are arranged, the vacuum air pump is started, the vacuum air pump pumps air in the device completely, the heat preservation effect in the furnace body is guaranteed, the preservation layer arranged in the furnace body can isolate heat from being dissipated out of the furnace body, the quartz crucible can be tightly surrounded by the heat generated by the graphite heater, heat loss is avoided, and energy conservation is guaranteed;
3. through setting up the hydrogen intake pipe, go up furnace chamber and slipmat, utilize the seed crystal clamp that rotary mechanism and wire rope are connected to prepare monocrystalline silicon, some heat can enter into last furnace chamber, let in hydrogen towards vacuum last furnace chamber, the monocrystalline silicon emergence reaction that can effectually avoid the preparation turns into other materials, the slipmat that sets up bottom the supporting leg can be with the steady standing of device subaerial, the stability of effectual assurance device, realize the steady work of monocrystalline furnace.
Drawings
FIG. 1 is a front view showing an embodiment 1 of a height adjusting apparatus for a quartz crucible in a single crystal furnace of a semiconductor device according to the present invention;
FIG. 2 is a perspective sectional view showing an embodiment 1 of a height adjusting apparatus for a quartz crucible in a single crystal furnace of a semiconductor device according to the present invention;
FIG. 3 is a schematic view showing the internal structure of a furnace body of embodiment 1 of a height adjusting apparatus for a quartz crucible in a single crystal furnace of a semiconductor device according to the present invention;
FIG. 4 is a schematic structural view of a gas cell group in embodiment 1 of a height adjusting apparatus for a quartz crucible in a single crystal furnace of a semiconductor device according to the present invention;
FIG. 5 is a perspective view showing the construction of an embodiment 2 of a height adjusting apparatus for a quartz crucible in a single crystal furnace of a semiconductor device according to the present invention.
In the figure: 1 supporting leg, 2 power cords, 3 furnace bodies, 4 furnace covers, 5 hydrogen gas inlet pipes, 6 rotating mechanisms, 7 upper furnace chambers, 8 isolation valves, 9 gas guide pipes, 10 vacuum air pumps, 11 motors, 12 lifting ropes, 13 heat preservation layers, 14 quartz crucibles, 15 connecting rods, 16 quartz trays, 17 limiting rods, 18 threaded rods, 19 threaded sleeves, 20 supporting slide blocks, 21 air bag groups, 22 graphite heaters and 23 anti-skidding cushions.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Example 1
Referring to fig. 1-4, a height adjusting device for a quartz crucible in a single crystal furnace of a semiconductor device comprises a furnace body 3, a threaded rod 18 is connected to the inner wall of the bottom of the furnace body 3 through a bearing, a threaded sleeve 19 is connected to the outer wall of the threaded rod 18 through a thread, a quartz tray 16 is fixedly connected to the top end of the threaded sleeve 19, a quartz casserole is fixedly connected to the outer wall of the top of the quartz tray 16, mounting grooves are respectively formed on the inner walls of two sides of the furnace body 3 near the central position, an air bag group 21 is fixedly connected to the inner wall of the top of the two mounting grooves, an air duct 9 is fixedly connected to the outer wall of one side of the air bag group 21, supporting sliders 20 are slidably connected to the inner wall of the mounting grooves, the top ends of the two supporting sliders 20 are fixedly connected to the outer wall of the bottom of the air bag group 21, connecting, the central position of the outer wall of the bottom of the furnace body 3 is fixedly connected with a motor 11, and one end of an output shaft of the motor 11 is fixedly connected with the bottom end of a threaded rod 18.
In the invention, the inner walls of two sides of the furnace body 3 close to the bottom are both provided with sliding grooves, and the inner walls of the two sliding grooves are both connected with moving blocks in a sliding manner.
In the invention, the outer walls of two sides of the threaded sleeve 19 are fixedly connected with the limiting rods 17, and one ends of the two limiting rods 17 are fixedly connected to the outer wall of one side of the two moving blocks.
In the invention, the inner wall of the furnace body 3 close to the top is fixedly connected with an insulating layer 13, and a quartz crucible 14 is positioned at the center of the insulating layer 13.
In the invention, graphite heaters 22 are fixedly connected on the inner walls of two sides of a furnace body 3, a power line 2 is fixedly connected on the outer wall of one side of each graphite heater 22, and one end of each power line 2 is fixedly connected with a power plug.
In the invention, the outer wall of the top of the furnace body 3 is fixedly connected with a furnace cover 4, and the central position of the outer wall of the top of the furnace cover 4 is fixedly connected with an isolation valve 8.
In the invention, the top outer wall of the isolation valve 8 is fixedly connected with an upper furnace chamber 7, the outer wall of one side of the upper furnace chamber 7 is fixedly connected with a hydrogen inlet pipe 5, and the top end of the upper furnace chamber 7 is fixedly connected with a rotating mechanism 6.
In the invention, the outer wall of the bottom of the rotating mechanism 6 is fixedly connected with a lifting rope 12, and the bottom end of the lifting rope 12 is fixedly connected with a seed crystal clamp.
In the invention, a vacuum air pump 10 is arranged on the outer wall of one side of a furnace body 3, one end of the vacuum air pump 10 is fixedly connected with a connecting pipe, one end of the connecting pipe is communicated with the inside of the furnace body 3, and the periphery of the outer wall of the bottom of the furnace body 3 is fixedly connected with supporting legs 1.
When the silicon solution preparation device is used, the vacuum air pump 10 is started, the vacuum air pump 10 pumps air in the device completely, the heat preservation effect in the furnace body 3 is ensured, a power plug at one side of the single crystal furnace body 3 is connected with a power supply, the graphite heater 22 is started, the silicon solution in the quartz crucible 14 is ensured to be kept in a stable state, the heat preservation layer 13 arranged in the furnace body 3 can isolate heat from being dissipated out of the furnace body 3, the crystal seed clamp connected with the rotating mechanism 6 and the lifting rope 12 is utilized to prepare the monocrystalline silicon, after the silicon solution in the quartz crucible 14 is consumed for a period of time, the liquid level of the silicon solution is lowered, the motor 11 is started, the motor 11 drives the threaded rod 18 to rotate, the outer wall of the rotating threaded rod 18 is in threaded connection with the threaded sleeve 19, under the action of the rotating threaded rod 18, the threaded sleeve 19 is fixed to be raised, at this time, the connecting rods 15 connected to the two sides of the quartz tray 16 extrude the supporting slide block 20, the supporting slide block 20 is blocked by the air bag group 21 in the mounting groove when sliding upwards, and air in the air bag group 21 is slowly discharged from one end of the air duct 9, so that sudden thermal shock caused by sudden starting and stopping of the lifting device is effectively relieved.
Example 2
Referring to fig. 5, a height adjusting device for a quartz crucible in a single crystal furnace of a semiconductor device, comprising a furnace body 3, a threaded rod 18 connected to the inner wall of the bottom of the furnace body 3 through a bearing, a threaded sleeve 19 connected to the outer wall of the threaded rod 18 through a thread, a quartz tray 16 fixedly connected to the top end of the threaded sleeve 19, a quartz casserole fixedly connected to the outer wall of the top of the quartz tray 16, mounting grooves opened on the inner walls of the two sides of the furnace body 3 near the central position, airbag groups 21 fixedly connected to the inner walls of the top of the two mounting grooves, an air duct 9 fixedly connected to the outer wall of one side of the airbag group 21, supporting sliders 20 slidably connected to the inner walls of the mounting grooves, the top ends of the two supporting sliders 20 fixedly connected to the outer wall of the bottom of the airbag groups 21, connecting rods 15 fixedly connected to the outer walls of the two sides, the central position of the outer wall of the bottom of the furnace body 3 is fixedly connected with a motor 11, and one end of an output shaft of the motor 11 is fixedly connected with the bottom end of a threaded rod 18.
In the invention, the inner walls of two sides of the furnace body 3 close to the bottom are both provided with sliding grooves, and the inner walls of the two sliding grooves are both connected with moving blocks in a sliding manner.
In the invention, the outer walls of two sides of the threaded sleeve 19 are fixedly connected with the limiting rods 17, and one ends of the two limiting rods 17 are fixedly connected to the outer wall of one side of the two moving blocks.
In the invention, the inner wall of the furnace body 3 close to the top is fixedly connected with an insulating layer 13, and a quartz crucible 14 is positioned at the center of the insulating layer 13.
In the invention, graphite heaters 22 are fixedly connected on the inner walls of two sides of a furnace body 3, a power line 2 is fixedly connected on the outer wall of one side of each graphite heater 22, and one end of each power line 2 is fixedly connected with a power plug.
In the invention, the outer wall of the top of the furnace body 3 is fixedly connected with a furnace cover 4, and the central position of the outer wall of the top of the furnace cover 4 is fixedly connected with an isolation valve 8.
In the invention, the top outer wall of the isolation valve 8 is fixedly connected with an upper furnace chamber 7, the outer wall of one side of the upper furnace chamber 7 is fixedly connected with a hydrogen inlet pipe 5, and the top end of the upper furnace chamber 7 is fixedly connected with a rotating mechanism 6.
In the invention, the outer wall of the bottom of the rotating mechanism 6 is fixedly connected with a lifting rope 12, and the bottom end of the lifting rope 12 is fixedly connected with a seed crystal clamp.
In the invention, a vacuum air pump 10 is arranged on the outer wall of one side of a furnace body 3, one end of the vacuum air pump 10 is fixedly connected with a connecting pipe, one end of the connecting pipe is communicated with the inside of the furnace body 3, and the periphery of the outer wall of the bottom of the furnace body 3 is fixedly connected with supporting legs 1.
This embodiment compares in embodiment 1, still includes, equal fixedly connected with slipmat 23 on the bottom outer wall of supporting leg 1.
During the use, the slipmat 23 of setting in supporting leg 1 bottom can be with the steady stand of device with subaerial, the effectual stability of guaranteeing the furnace body 3 device.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (10)
1. A height adjusting device for a quartz crucible in a single crystal furnace of semiconductor equipment comprises a furnace body (3) and is characterized in that a threaded rod (18) is connected to the inner wall of the bottom of the furnace body (3) through a bearing, a threaded sleeve (19) is connected to the outer wall of the threaded rod (18) through threads, a quartz tray (16) is fixedly connected to the top end of the threaded sleeve (19), a quartz marmite is fixedly connected to the outer wall of the top of the quartz tray (16), mounting grooves are formed in the inner walls of two sides, close to the central position, of the furnace body (3), air bag groups (21) are fixedly connected to the inner walls of the tops of the two mounting grooves, an air guide pipe (9) is fixedly connected to the outer wall of one side of each air bag group (21), supporting slide blocks (20) are slidably connected to the inner walls of the mounting grooves, and the top ends of the two supporting slide blocks (, equal fixedly connected with connecting rod (15) on the both sides outer wall of quartz tray (16), the one end fixed connection of connecting rod (15) is on the bottom outer wall of support slider (20), the central point fixedly connected with motor (11) of furnace body (3) bottom outer wall, the one end fixed connection of motor (11) output shaft is in the bottom of threaded rod (18).
2. The height adjusting device of a quartz crucible used in a single crystal furnace of a semiconductor device according to claim 1, wherein the inner walls of both sides of the furnace body (3) near the bottom are provided with sliding grooves, and the inner walls of both sliding grooves are slidably connected with moving blocks.
3. The height adjusting device of a quartz crucible used in a single crystal furnace of a semiconductor device according to claim 1, wherein the outer walls of both sides of the threaded sleeve (19) are fixedly connected with limit rods (17), and one ends of the two limit rods (17) are fixedly connected to the outer wall of one side of the two moving blocks.
4. The height adjusting apparatus of a quartz crucible used in a single crystal furnace of a semiconductor device according to claim 2, wherein an insulating layer (13) is fixedly attached to an inner wall of the furnace body (3) near the top, and the quartz crucible (14) is located at the center of the insulating layer (13).
5. The height adjusting apparatus for the quartz crucible in the single crystal furnace of the semiconductor device according to claim 4, wherein the graphite heater (22) is fixedly connected to both inner walls of the furnace body (3), the power line (2) is fixedly connected to one outer wall of the graphite heater (22), and one end of the power line (2) is fixedly connected to a power plug.
6. The height adjusting apparatus for a quartz crucible in a single crystal furnace for a semiconductor device according to claim 1, wherein a furnace cover (4) is fixedly attached to an outer top wall of the furnace body (3), and an isolation valve (8) is fixedly attached to a central position of the outer top wall of the furnace cover (4).
7. The height adjusting apparatus of the quartz crucible used in the single crystal furnace of the semiconductor device according to claim 6, wherein an upper furnace chamber (7) is fixedly connected to the outer wall of the top of the isolation valve (8), a hydrogen gas inlet pipe (5) is fixedly connected to the outer wall of one side of the upper furnace chamber (7), and a rotating mechanism (6) is fixedly connected to the top end of the upper furnace chamber (7).
8. The height adjusting apparatus of a quartz crucible used in a single crystal furnace of a semiconductor device according to claim 7, wherein a lifting rope (12) is fixedly connected to the outer wall of the bottom of the rotating mechanism (6), and a seed crystal holder is fixedly connected to the bottom end of the lifting rope (12).
9. The height adjusting device of a quartz crucible used in a single crystal furnace of a semiconductor device according to claim 1, wherein a vacuum air pump (10) is provided on an outer wall of one side of the furnace body (3), one end of the vacuum air pump (10) is fixedly connected with a connecting pipe, one end of the connecting pipe is communicated with the inside of the furnace body (3), and the periphery of the outer wall of the bottom of the furnace body (3) is fixedly connected with the supporting legs (1).
10. The height adjusting apparatus for a quartz crucible in a single crystal furnace of a semiconductor device according to claim 9, wherein non-slip pads (23) are fixedly attached to the outer walls of the bottoms of the support legs (1).
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| CN202011282728.XA CN112501683A (en) | 2020-11-16 | 2020-11-16 | Height adjusting device for quartz crucible in single crystal furnace of semiconductor equipment |
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| CN202011282728.XA CN112501683A (en) | 2020-11-16 | 2020-11-16 | Height adjusting device for quartz crucible in single crystal furnace of semiconductor equipment |
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Cited By (1)
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|---|---|---|---|---|
| CN114540940A (en) * | 2022-02-15 | 2022-05-27 | 浙江晶阳机电股份有限公司 | Automatic liquid level measurement and compensation integrated system and method for single crystal furnace |
| CN114540940B (en) * | 2022-02-15 | 2022-09-23 | 浙江晶阳机电股份有限公司 | Automatic liquid level measurement and compensation integrated device and method for single crystal furnace |
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