CN110257910A - A kind of silicon semiconductor material single crystal growing furnace - Google Patents
A kind of silicon semiconductor material single crystal growing furnace Download PDFInfo
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- CN110257910A CN110257910A CN201910680447.0A CN201910680447A CN110257910A CN 110257910 A CN110257910 A CN 110257910A CN 201910680447 A CN201910680447 A CN 201910680447A CN 110257910 A CN110257910 A CN 110257910A
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- crucible
- magnetic
- single crystal
- semiconductor material
- silicon semiconductor
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to semiconductor processing technology fields, and disclose a kind of silicon semiconductor material single crystal growing furnace, the inner wall of the furnace body is equipped with soft iron rod, cigarette has induction coil on the soft iron rod, the end of the soft iron rod is fixedly connected with magnetic flexible, the outside of the graphite crucible is equipped with magnet ring, and the diameter of the magnetic flexible is greater than the diameter of magnet ring, and the magnetic flexible and magnet ring constitute magnetic force area.The silicon semiconductor material single crystal growing furnace, pass through the cooperation between soft iron rod and induction coil, so that the magnetic force on magnetic flexible is continuously increased with pull rate, so that crucible is when rising, always synchronous with seed shaft holding, so that lifting crystal diameter is equal with inside crucible, promote the lifting quality of crystal, reduce the proportion of goods damageds of the crystal in lifting, crucible is made to be always positioned at the middle part of seed shaft simultaneously, so that the state of crucible held stationary rises, increase stabilization of the liquid level when rising, increases stability of the crystal in lifting.
Description
Technical field
The present invention relates to semiconductor processing technology field, specially a kind of silicon semiconductor material single crystal growing furnace.
Background technique
Single crystal growing furnace is one kind in inert gas (based on nitrogen, helium) environment, with graphite heater that polysilicon etc. is more
Brilliant material fusing, with the equipment of Grown by CZ Method dislocation-free monocrystalline.
Silicon semiconductor needs to be formed the semiconductor of each size after single crystal growing furnace is processed when drawing in bar, from
And it is applied to different technical fields, the working principle of existing single crystal growing furnace is as described in Figure 6: polycrystal silicon material is put into silica crucible
Interior, then inject a gas into, heated fusing, after temperature is suitable, by immersing seed shaft, welding, seeding, shouldering turns shoulder,
Deng warp, finish up and etc., the drawing of a single crystal rod is completed, then after single crystal growing furnace is cooling, single crystal rod can be taken out, monocrystalline
Ingot is in pulling process, and with the reduction of liquid level, graphite crucible is moved up by pressure pin jack-up, promotes the pull rate of crystal,
Crucible, due to being all manually to install, causes the precision of crystal pull speed and crucible rising, crystal straight during lifting
The inconsistency of diameter and crucible internal diameter causes crucible locally to generate small shaking, and crucible drives the liquid inside crucible when shaking
Face shake, cause crystal lifting when there is deformation, the crystal after lifting is not available, crystal seed axis lifting when, by
Mechanical vibration, end can also generate small shake, further decrease precision of the crystal in lifting, influence adding for crystal
Work.
Summary of the invention
For the deficiency of above-mentioned background technique, the present invention provides a kind of silicon semiconductor material single crystal growing furnaces, have and mention
Advantage accurate, that rising is stable is drawn, solves the problems, such as background technique proposition.
The invention provides the following technical scheme: a kind of silicon semiconductor material single crystal growing furnace, including furnace body, pressure pin, graphite
Crucible, silica crucible, crystal, seed shaft, heating device, exhaust pipe, pressure pin are mounted in furnace body, and graphite crucible is mounted on pressure pin
Top, silica crucible is mounted on the inside of graphite crucible, and crystal is mounted on the inside of silica crucible, and seed shaft is mounted on
Crystal on put, heating device is mounted on the outside of graphite crucible, and exhaust pipe is mounted on the bottom of furnace body, the inner wall of the furnace body
Soft iron rod is installed, cigarette has induction coil on the soft iron rod, and the end of the soft iron rod is fixedly connected with magnetic flexible, described
The outside of graphite crucible is equipped with magnet ring, and the diameter of the magnetic flexible is greater than the diameter of magnet ring, and the magnetic flexible and magnet ring are constituted
Magnetic force area, the inner wall of the furnace body are equipped with limit base, and the inner wall of the limit base is rotatably connected to gag lever post, the gag lever post
On supporting block is installed, the quantity of the limit base is two groups, and the side of limit base described in another group is fixedly connected with position limiting clamp.
Preferably, the side shape of the furnace body has protective case, and the soft iron rod is sleeved in protective case, the protective case
End is fixedly connected with the side of magnetic flexible.
Preferably, the inner wall of the furnace body is fixedly connected with the supporting block of the two sides above and below soft iron rod, the supporting block
Flank threads be connected with screw rod, the end of the screw rod is rotatably connected to positioning seat.
Preferably, the inner rotation of the positioning seat is connected with locating rod, and positioning plate is equipped in the locating rod, described
The quantity of supporting block is two groups, and the side of supporting block described in another group is fixedly connected with the outer wall of magnetic flexible.
Preferably, the quantity of the magnetic flexible is two groups, and the shape of the magnetic flexible is semicircle, the magnetic flexible it is interior
It is fixedly connected with magnetic patch at circle, the magnetic patch and magnet ring are that magnetic force repels each other state, magnetic force with magnet ring after the magnetic flexible is powered
It also is state of repelling each other.
Preferably, the outside of limit base, the end thread of the gag lever post are run through and extended in one end of the gag lever post
It is connected with the nut being located at outside limit base, the diameter of the nut is greater than the diameter of gag lever post and limit base joint.
Preferably, the shape of the position limiting clamp is half arc, and two position limiting clamps compositions are round, the position limiting clamp it is straight
Diameter is greater than the diameter of seed shaft, and the side of the position limiting clamp and the outer wall of seed shaft are slidably connected.
The present invention have it is following the utility model has the advantages that
1, silicon semiconductor material single crystal growing furnace, by the cooperation between soft iron rod and induction coil, so that magnetic flexible
On magnetic force be continuously increased with pull rate so that crucible rise when, it is synchronous with seed shaft holdings always so that lift crystal
Diameter is equal with inside crucible, promotes the lifting quality of crystal, reduces the proportion of goods damageds of the crystal in lifting, while crucible is begun
Final position is in the middle part of seed shaft, so that the state of crucible held stationary rises, increases stabilization of the liquid level when rising, increases crystal
Stability in lifting.
2, silicon semiconductor material single crystal growing furnace, by being used cooperatively for limit plate and position limiting clamp, so that seed shaft exists
In process of rising or falling, crystal is improved so that seed shaft keeps vertical direction movement in the range initially moved always
Precision in lifting increases the quality of crystal so that the crystal after lifting is consistent with the crystal diameter inside crucible, leads to simultaneously
The effect for crossing magnetic patch further increases the magnetism intensity in magnetic force area, so that crucible is always positioned at the middle part of furnace body, increases crucible
Stability.
Detailed description of the invention
Fig. 1 is schematic structural view of the invention；
Fig. 2 is the enlarged structure schematic diagram of magnetic flexible；
Fig. 3 is the overlooking structure diagram of magnetic flexible；
Fig. 4 is the structural schematic diagram of positioning seat；
Fig. 5 is the structural schematic diagram of limit base；
Fig. 6 is existing structure schematic diagram.
In figure: 1, furnace body；2, pressure pin；3, graphite crucible；4, silica crucible；5, crystal；6, seed shaft；7, heating device；
8, exhaust pipe；9, soft iron rod；10, induction coil；11, protective case；12, magnetic flexible；13, supporting block；14, screw rod；15, it positions
Seat；16, locating rod；17, positioning plate；18, magnetic patch；19, magnet ring；20, limit base；21, gag lever post；22, nut；23, limit plate；
24, position limiting clamp.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Please refer to Fig. 1-5, a kind of silicon semiconductor material single crystal growing furnace, including furnace body 1, pressure pin 2, graphite crucible 3, quartz
Crucible 4, crystal 5, seed shaft 6, heating device 7, exhaust pipe 8, pressure pin 2 are mounted in furnace body 1, and graphite crucible 3 is mounted on pressure pin 2
Top, silica crucible 4 is mounted on the inside of graphite crucible 3, and crystal 5 is mounted on the inside of silica crucible 4, and seed shaft 6 is installed
It is put on the crystal 5 being located at, heating device 7 is mounted on the outside of graphite crucible 3, and exhaust pipe 8 is mounted on the bottom of furnace body 1, institute
The inner wall for stating furnace body 1 is equipped with soft iron rod 9, and cigarette has an induction coil 10 on the soft iron rod 9,10 energization size of induction coil,
It can be adjusted with the speed that crucible rises, the end of the soft iron rod 9 is fixedly connected with magnetic flexible 12, and magnetic flexible 12 is soft iron
Material, the outside of the graphite crucible 3 are equipped with magnet ring 19, and the diameter of the magnetic flexible 12 is greater than the diameter of magnet ring 19, described
Magnetic flexible 12 and magnet ring 19 constitute magnetic force area, magnet ring 19 can repel each other at the middle part of furnace body 1 between magnetic force area, so that crucible exists
When rising, certain stability is remained, the inner wall of the furnace body 1 is equipped with limit base 20, the inner wall of the limit base 20
It is rotatably connected to gag lever post 21, supporting block 13 is installed, the quantity of the limit base 20 is two groups, another on the gag lever post 21
The side of the group limit base 20 is fixedly connected with position limiting clamp 24.
Wherein, the side shape of the furnace body 1 has protective case 11, and the soft iron rod 9 is sleeved in protective case 11, the protection
The end of set 11 is fixedly connected with the side of magnetic flexible 12, and protective case 11 is mainly exactly to protect soft iron rod 9 and induction coil 10
Get up, increases the stability of soft iron rod 9 and induction coil 10.
Wherein, the inner wall of the furnace body 1 is fixedly connected with the supporting block 13 positioned at about 9 two sides of soft iron rod, the support
The flank threads of block 13 are connected with screw rod 14, and the end of the screw rod 14 is rotatably connected to positioning seat 15, and the design of screw rod 14 can
To dismantle positioning seat 15 from magnetic flexible 12, convenient for the replacement of magnetic flexible 12, while increasing when in use steady of magnetic flexible 12
It is qualitative.
Wherein, the inner rotation of the positioning seat 15 is connected with locating rod 16, is equipped with positioning plate in the locating rod 16
17, the quantity of the supporting block 13 is two groups, and the side of supporting block 13 described in another group is fixedly connected with the outer wall of magnetic flexible 12,
Convenient for magnetic flexible 12 to be fixed on to the inside of furnace body 1, enables magnetic flexible 12 to stablize release magnetic force, crucible is maintained at furnace body 1
Middle part, increase the stability of liquid level.
Wherein, the quantity of the magnetic flexible 12 is two groups, and the shape of the magnetic flexible 12 is semicircle, the magnetic flexible 12
Inner ring at be fixedly connected with magnetic patch 18, the magnetic patch 18 and magnet ring 19 are that magnetic force repels each other state, after the magnetic flexible 12 is powered
Magnetic force with magnet ring 19 is also state of repelling each other.
Wherein, the outside of limit base 20, the end of the gag lever post 21 are run through and extended in one end of the gag lever post 21
It is threaded with the nut 22 being located at outside limit base 20, the diameter of the nut 22 is greater than gag lever post 21 and connects with limit base 20
The diameter at place increases the stability in use of gag lever post 21.
Wherein, the shape of the position limiting clamp 24 is half arc, and two position limiting clamps 24 form circle, the position limiting clamp 24
Diameter be greater than seed shaft 6 diameter, the side of the position limiting clamp 24 and the outer wall of seed shaft 6 are slidably connected, further increase
The stability in use of seed shaft 6, avoids seed shaft 6 from shaking.
Polycrystal silicon material is put into silica crucible 4 by working principle, and then heating device 7 discharges heat, and silicon materials are melted
Change, at this moment seed shaft 6 constantly moves up lifting crystal, while 4 times of pressure pins 2 of silica crucible jack up upwards, then induction when jacking up
Coil 10 is powered, and magnetic force will be full of on magnetic flexible 12, and the magnetic force that then magnetic flexible 12 and magnetic patch 18 are accumulated repels each other magnet ring 19
The middle part of furnace body 1, with the rising of crucible, crucible is maintained 1 middle part of furnace body by the dynamics that magnetic flexible 12 and magnet ring 19 repel each other, when
When seed shaft 6 is mobile, the inside for being always positioned at position limiting clamp 24 is mobile.
It should be noted that, in this document, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.
It although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
A variety of variations, modification, replacement can be carried out to these embodiments without departing from the principles and spirit of the present invention by understanding
And modification, the scope of the present invention is defined by the appended.
Claims (7)
1. a kind of silicon semiconductor material single crystal growing furnace, including furnace body (1), pressure pin (2), graphite crucible (3), silica crucible (4),
Crystal (5), seed shaft (6), heating device (7), exhaust pipe (8), pressure pin (2) are mounted in furnace body (1), graphite crucible (3) peace
Mounted in the top of pressure pin (2), silica crucible (4) is mounted on the inside of graphite crucible (3), and crystal (5) is mounted on silica crucible (4)
Inside, put on the crystal (5) that seed shaft (6) is mounted on, heating device (7) is mounted on the outside of graphite crucible (3), row
Tracheae (8) is mounted on the bottom of furnace body (1), it is characterised in that: the inner wall of the furnace body (1) is equipped with soft iron rod (9), described soft
There is induction coil (10) cigarette on iron staff (9), the end of the soft iron rod (9) is fixedly connected with magnetic flexible (12), the graphite
The outside of crucible (3) is equipped with magnet ring (19), and the diameter of the magnetic flexible (12) is greater than the diameter of magnet ring (19), the magnetic flexible
(12) constitute magnetic force area with magnet ring (19), the inner wall of the furnace body (1) is equipped with limit base (20), the limit base (20) it is interior
Wall is rotatably connected to gag lever post (21), is equipped with supporting block (13) on the gag lever post (21), the quantity of the limit base (20)
It is two groups, the side of limit base described in another group (20) is fixedly connected with position limiting clamp (24).
2. a kind of silicon semiconductor material single crystal growing furnace according to claim 1, it is characterised in that: the furnace body (1)
Side shape has protective case (11), and the soft iron rod (9) is sleeved in protective case (11), the end of the protective case (11) and magnetic force
The side of circle (12) is fixedly connected.
3. a kind of silicon semiconductor material single crystal growing furnace according to claim 1, it is characterised in that: the furnace body (1)
Inner wall is fixedly connected with the supporting block (13) positioned at soft iron rod (9) two sides up and down, the flank threads connection of the supporting block (13)
Have screw rod (14), the end of the screw rod (14) is rotatably connected to positioning seat (15).
4. a kind of silicon semiconductor material single crystal growing furnace according to claim 3, it is characterised in that: the positioning seat (15)
Inner rotation be connected with locating rod (16), be equipped with positioning plate (17) on the locating rod (16), the supporting block (13)
Quantity is two groups, and the side of supporting block described in another group (13) is fixedly connected with the outer wall of magnetic flexible (12).
5. a kind of silicon semiconductor material single crystal growing furnace according to claim 1, it is characterised in that: the magnetic flexible (12)
Quantity be two groups, the shape of the magnetic flexible (12) is semicircle, is fixedly connected with magnetic at the inner ring of the magnetic flexible (12)
Block (18), the magnetic patch (18) and magnet ring (19) are that magnetic force repels each other state, the magnetic flexible (12) be powered after with magnet ring (19)
Magnetic force is also state of repelling each other.
6. a kind of silicon semiconductor material single crystal growing furnace according to claim 1, it is characterised in that: the gag lever post (21)
One end run through and extend to the outside of limit base (20), the end thread of the gag lever post (21) is connected with positioned at limit base
(20) external nut (22), the diameter of the nut (22) are greater than the diameter of gag lever post (21) and limit base (20) joint.
7. a kind of silicon semiconductor material single crystal growing furnace according to claim 1, it is characterised in that: the position limiting clamp (24)
Shape be half arc, two position limiting clamps (24) compositions are round, and the diameter of the position limiting clamp (24) is greater than seed shaft (6)
Diameter, the side of the position limiting clamp (24) and the outer wall of seed shaft (6) are slidably connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910680447.0A CN110257910A (en) | 2019-07-26 | 2019-07-26 | A kind of silicon semiconductor material single crystal growing furnace |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910680447.0A CN110257910A (en) | 2019-07-26 | 2019-07-26 | A kind of silicon semiconductor material single crystal growing furnace |
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| CN110257910A true CN110257910A (en) | 2019-09-20 |
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| CN201910680447.0A Pending CN110257910A (en) | 2019-07-26 | 2019-07-26 | A kind of silicon semiconductor material single crystal growing furnace |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112501683A (en) * | 2020-11-16 | 2021-03-16 | 连城凯克斯科技有限公司 | Height adjusting device for quartz crucible in single crystal furnace of semiconductor equipment |
| CN113061974A (en) * | 2021-03-23 | 2021-07-02 | 浙江晶阳机电股份有限公司 | Vacuum straight pulling furnace production mechanism and straightening and crystal taking method thereof |
| CN114836824A (en) * | 2022-03-29 | 2022-08-02 | 徐州鑫晶半导体科技有限公司 | Seed crystal pulling device, crystal growth equipment and seed crystal pulling method |
| CN117904706A (en) * | 2024-03-19 | 2024-04-19 | 浙江晶盛机电股份有限公司 | Crystal growth furnace |
| CN117904706B (en) * | 2024-03-19 | 2024-06-07 | 浙江晶盛机电股份有限公司 | Crystal growth furnace |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103216527A (en) * | 2013-03-15 | 2013-07-24 | 浙江大学 | Magnetic bearing based on radial rejection and application thereof |
| CN109371460A (en) * | 2018-12-13 | 2019-02-22 | 中国电子科技集团公司第十三研究所 | A kind of adjustable stabilising arrangement of seed rod |
-
2019
- 2019-07-26 CN CN201910680447.0A patent/CN110257910A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103216527A (en) * | 2013-03-15 | 2013-07-24 | 浙江大学 | Magnetic bearing based on radial rejection and application thereof |
| CN109371460A (en) * | 2018-12-13 | 2019-02-22 | 中国电子科技集团公司第十三研究所 | A kind of adjustable stabilising arrangement of seed rod |
Non-Patent Citations (2)
| Title |
|---|
| 中华书局辞海编辑所: "《辞海试行本 第12分册 自然科学 数学•物理•化学•天文 地球物理•地质》", 31 October 1961, 中华书局辞海编辑所 * |
| 青少年万有书系编写组: "《科技与科学》", 31 January 2014, 辽宁少年儿童 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112501683A (en) * | 2020-11-16 | 2021-03-16 | 连城凯克斯科技有限公司 | Height adjusting device for quartz crucible in single crystal furnace of semiconductor equipment |
| CN113061974A (en) * | 2021-03-23 | 2021-07-02 | 浙江晶阳机电股份有限公司 | Vacuum straight pulling furnace production mechanism and straightening and crystal taking method thereof |
| CN113061974B (en) * | 2021-03-23 | 2022-02-15 | 浙江晶阳机电股份有限公司 | Vacuum straight pulling furnace production mechanism and straightening and crystal taking method thereof |
| CN114836824A (en) * | 2022-03-29 | 2022-08-02 | 徐州鑫晶半导体科技有限公司 | Seed crystal pulling device, crystal growth equipment and seed crystal pulling method |
| CN114836824B (en) * | 2022-03-29 | 2024-03-29 | 中环领先(徐州)半导体材料有限公司 | Seed crystal pulling device, crystal growth equipment and seed crystal pulling method |
| CN117904706A (en) * | 2024-03-19 | 2024-04-19 | 浙江晶盛机电股份有限公司 | Crystal growth furnace |
| CN117904706B (en) * | 2024-03-19 | 2024-06-07 | 浙江晶盛机电股份有限公司 | Crystal growth furnace |
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Application publication date: 20190920 |