CN108866621A - A kind of silicon single crystal seeding structure and technique - Google Patents
A kind of silicon single crystal seeding structure and technique Download PDFInfo
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- CN108866621A CN108866621A CN201710343971.XA CN201710343971A CN108866621A CN 108866621 A CN108866621 A CN 108866621A CN 201710343971 A CN201710343971 A CN 201710343971A CN 108866621 A CN108866621 A CN 108866621A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
The present invention provides a kind of silicon single crystal seeding structure and technique, wherein the silicon single crystal seeding structure includes at least：Seed crystal；The reinforcement neck being connect with the seed crystal；The contractible neck being connect with the reinforcement neck；Wherein, the seed crystal, the reinforcement neck and the contractible neck are coaxial.The present invention draws one section of reinforcement neck by designing in seeding initial phase, reinforcement has been carried out to the crystal intensity of seeding initiation region, it effectively prevent being broken when crystal growth since this region crystal intensity is low, to reduce the probability of seeding structural break, the risk for reducing seeding failure, has saved the production time.In addition, the present invention draws the contractible neck of one section of connection reinforcement neck by design, n the second connected arc sections are designed to, the dislocation as caused by thermal stress and dislocation caused by temperature gradient can be excluded quickly, length and long brilliant time so as to shorten seeding structure.
Description
Technical field
The present invention relates to crystal preparing technology fields, more particularly to a kind of silicon single crystal seeding structure and technique.
Background technique
In single crystal, structure cell forms repetitive structure, if structure cell misplaces, such case is just called dislocation.Dislocation can be
Any stage in crystal growth and silicon wafer preparation process generates.Currently, silicon single crystal (or silicon ingot) crystal growth generallys use
Czochralski method, in order to grow the seed crystal that the silicon single crystal of certain crystal orientation (generally (100) or (111)) just needs required crystal orientation.Seed crystal
Equal dislocation-free and crystal quality is very high, but in the seeding Dip stage, during seed crystal contacts bath surface downwards, due to
Thermal stress is inevitably generated dislocation inside seed crystal, to cause to generate dislocation in subsequent silicon single crystal crystal growing process.Needle
To this problem, the prior art is reduced in crystal growth using the neck-shaped contraction method in silicon single crystal crystal growing process
Dislocation.This method includes being shunk to the cross section of seed crystal using neck-shaped when just starting to draw, and grows to dislocation on surface,
Then with sufficiently fast several centimetres of growth rate, high vacancy concentration is made to eliminate edge dislocation.Therefore, in order to grow zero dislocations silicon list
It is brilliant, it is necessary to draw one section of sufficiently long thin neck (also referred to as Neck) to exclude dislocation, also, generally require extraction and silicon single crystal
The comparable thin neck of cross-sectional diameter (i.e. the diameter of silicon wafer) length could exclude dislocation completely.As shown in Figure 1 in the prior art
Silicon single crystal seeding structure, including seed crystal 1' and thin neck 2', there is many dislocation line 3' on seed crystal 1' and thin neck 2', and by
Fig. 1 is it is not difficult to find that just started when seeding that dislocation line 3' is most, and as the thin neck 2' of extraction is gradually lengthened, dislocation line 3' gradually subtracts
It is few, after the thin neck 2' long enough of extraction, it will be able to exclusion dislocation completely.
But there is also defect, defects the most apparent to be for the method for above-mentioned exclusion dislocation, the position generated due to thermal stress
Mistake can reduce the intensity of crystal, and (especially in the initial phase of seeding, the dislocation that thermal stress generates is most, and the intensity of crystal is also most
It is low), so the cross-sectional diameter of thin neck needs slowly to be reduced to required size, otherwise have the danger of crystalline fracture；And
And since temperature gradient (temperature gradient of crystal radial direction is as shown in Figure 2) and argon gas flowing etc. influence, silicon melt surface will appear
Convection phenomena, so as to cause silicon melt surface shaking, and when seeding thin neck cross-sectional diameter very little, crystal and silicon at thin neck
Also very little, thin neck are easy to be shaken disconnected the contact area of melt.But in order to guarantee that dislocation excludes completely, the length of thin neck needs foot
It is enough long, correspondingly, the seeding time is also required to long enough, so, the unavoidable probability for increasing thin neck fracture, from
And increase the risk of seeding failure, once seeding failure must seeding again, cause the waste of production time.
In order to avoid the fracture of thin neck, although the crystalline substance at thin neck can be made by the method for the cross-sectional diameter of the thin neck of increase
The contact area of body and silicon melt increases.But so, from Figure 2 it can be seen that the cross-sectional diameter r of crystal is bigger at thin neck, temperature
It is bigger to spend gradient G, more dislocations are also more easy to produce in crystal growing process, to need to draw longer thin neck
Exclude dislocation, considerably increase seeding structure length and the long brilliant time, consume more materials, increase production cost,
It is unfavorable for technique production.
Therefore, under the premise of guaranteeing that dislocation excludes completely, the seeding structure and technique of silicon single crystal how are improved, to avoid
Seeding structure is broken in crystal growing process, while avoiding increasing the length of seeding structure and length brilliant time, is urgently
It solves the problems, such as.
Summary of the invention
In view of the foregoing deficiencies of prior art, the purpose of the present invention is to provide a kind of silicon single crystal seeding structure and works
Skill, for solve in the prior art seeding structure be easy to happen in crystal growing process fracture and seeding structure length compared with
The problem of long, the long brilliant time is longer, is unfavorable for technique production.
In order to achieve the above objects and other related objects, the present invention provides a kind of silicon single crystal seeding structure, wherein the silicon
Monocrystal seeding structure includes at least：
Seed crystal；
The reinforcement neck being connect with the seed crystal；
The contractible neck being connect with the reinforcement neck；
Wherein, the seed crystal, the reinforcement neck and the contractible neck are coaxial.
Preferably, the reinforcement neck includes at least：Draw and connect section, with first arc section for drawing and connecing section and connecting；Wherein：
Described to draw that connect section be reversed round bench shaped, top connects the seed crystal, and the cross-sectional diameter of bottom is more than or equal to
The maximum cross section diameter of the contractible neck；
The maximum cross section diameter of first arc section is more than or equal to the cross-sectional diameter of the seed crystal.
Preferably, the contractible neck includes at least：N the second arc sections being sequentially connected；Wherein, n is more than or equal to 1
Natural number.
Preferably, the setting of the minimum cross sectional diameter of second arc section is suitable for meeting following formula, so that described
The intensity of contractible neck can support the weight of the silicon single crystal：
Wherein, d is the minimum cross sectional diameter of second arc section, and D is the cross-sectional diameter of the silicon single crystal, and L is
The length of the silicon single crystal.
Preferably, the maximum cross section diameter of second arc section is the minimum cross sectional diameter of second arc section
1.1~2 times.
Preferably, the contractible neck further includes：The changeover portion being connect with n-th of second arc section bottoms；Wherein, the mistake
Crossing section is cylindrical shape, and cross-sectional diameter is equal to the minimum cross sectional diameter of second arc section.
In order to achieve the above objects and other related objects, the present invention provides a kind of silicon single crystal seeding technique, wherein the silicon
Monocrystal seeding technique includes at least following steps for drawing silicon single crystal seeding structure as described above：
The seed crystal of crystal orientation needed for silicon melt and the silicon single crystal are provided；
It will be lifted upwards after the seed crystal and the silicon melt welding；
The long brilliant speed of control, draws the reinforcement neck connecting with the seed crystal in advance；
Continue to draw the contractible neck connecting with the reinforcement neck；
Wherein, the seed crystal, the reinforcement neck and the contractible neck are coaxial.
Preferably, the long brilliant speed of control, draws the reinforcement neck connecting with the seed crystal, specific method is in advance：
The long brilliant speed of control slows down, and draws and connects section；Wherein, it is described draw connect section be reversed round bench shaped, top connect institute
Seed crystal is stated, the cross-sectional diameter of bottom is more than or equal to the maximum cross section diameter of the contractible neck；
Continue to control long brilliant speed first to accelerate to slow down again, draw with first arc section for drawing and connecing section and connecting, thus shape
At the reinforcement neck；Wherein：The maximum cross section diameter of first arc section is more than or equal to the cross-sectional diameter of the seed crystal.
Preferably, continue to draw the contractible neck connecting with the reinforcement neck, specific method is：
The long brilliant speed of control is first accelerated to slow down again, draws the second arc section connecting with the reinforcement neck；
Continue to control long brilliant speed first to accelerate to slow down again, repeats n times, draw n the second arc sections being sequentially connected, thus
Form the contractible neck：Wherein, n is the natural number more than or equal to 1.
Preferably, when drawing the contractible neck, the minimum cross sectional diameter of second arc section meets following formula,
So that the intensity of the contractible neck can support the weight of the silicon single crystal：
Wherein, d is the minimum cross sectional diameter of second arc section, and D is the cross-sectional diameter of the silicon single crystal, and L is
The length of the silicon single crystal.
Preferably, the maximum cross section diameter of second arc section is the minimum cross sectional diameter of second arc section
1.1~2 times.
Preferably, continue to draw the contractible neck connecting with the reinforcement neck, specific method further includes：
After drawing n-th of second arc sections, long brilliant constant airspeed is controlled, draws and connects with n-th of second arc section bottoms
The changeover portion connect；Wherein, the changeover portion is cylindrical shape, and the minimum that cross-sectional diameter is equal to second arc section is transversal
Face diameter.
Preferably, in the long brilliant speed of control, long brilliant speed is controlled by improving long brilliant temperature or improving pull rate
Degree slows down, also, is accelerated by reducing long brilliant temperature or reducing pull rate to control long brilliant speed.
As described above, silicon single crystal seeding structure of the invention and technique, have the advantages that：
The present invention draws one section of reinforcement neck by designing in seeding initial phase, to the crystal intensity of seeding initiation region into
It has gone reinforcement, has effectively prevent being broken when crystal growth since this region crystal intensity is low, to reduce seeding knot
The probability of structure fracture, reduces the risk of seeding failure, has saved the production time.Also, on this basis, the present invention is by reinforcement
Neck is designed as connecing section and the first arc section is constituted by drawing, while enhancing seeding initiation region crystal intensity, additionally it is possible to exclude
Most of dislocation as caused by thermal stress, to reduce the dislocation line of seeding initial phase.
In addition, the present invention draws the contractible neck of one section of connection reinforcement neck by design, it is designed to a second to be connected of n
Arc section can exclude the dislocation as caused by thermal stress and dislocation caused by temperature gradient, quickly so as to shorten seeding structure
Length and the long brilliant time.Also, on the basis of reinforcement neck eliminates most of dislocation as caused by thermal stress, receipts of the invention
Necking down can further shorten dislocation and exclude the time, to further shorten length and the length brilliant time of seeding structure.
Detailed description of the invention
Fig. 1 is shown as present invention silicon single crystal seeding structural schematic diagram in the prior art.
Fig. 2 is shown as the temperature gradient schematic diagram of present invention crystal radial direction in the prior art.
Fig. 3 is shown as the silicon single crystal seeding structural schematic diagram of first embodiment of the invention.
The silicon single crystal seeding structure that Fig. 4 is shown as first embodiment of the invention is excluded as caused by thermal stress when dislocation
Schematic diagram.
When the silicon single crystal seeding structure that Fig. 5 is shown as first embodiment of the invention excludes dislocation caused by temperature gradient
Schematic diagram.
Fig. 6 is shown as an example of contractible neck in the silicon single crystal seeding structure of first embodiment of the invention.
Fig. 7 is shown as another example of contractible neck in the silicon single crystal seeding structure of first embodiment of the invention.
Fig. 8 is shown as the flow diagram of the silicon single crystal seeding technique of second embodiment of the invention.
Component label instructions
1' seed crystal
The thin neck of 2'
3' dislocation line
1 seed crystal
2 reinforcement necks
21 draw and connect section
22 first arc sections
3 contractible necks
31 second arc sections
4 dislocation lines
S1~S4 step
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Fig. 3-Fig. 7 is please referred to, the first embodiment of the present invention is related to a kind of silicon single crystal seeding structures.It needs to illustrate
That the basic conception that only the invention is illustrated in a schematic way is illustrated provided in present embodiment, then in schema only display with
Related component in the present invention rather than component count when according to actual implementation, shape and size are drawn, and when actual implementation is each
Kenel, quantity and the ratio of component can arbitrarily change for one kind, and its assembly layout kenel may also be increasingly complex.
As shown in figure 3, the silicon single crystal seeding structure of present embodiment includes at least：Seed crystal 1；It is connect with the seed crystal 1
Reinforcement neck 2；And the contractible neck 3 being connect with the reinforcement neck 2；Wherein, the seed crystal 1, the reinforcement neck 2 and the contractible neck
3 is coaxial.
(namely one section of region of 1 lower section of seed crystal, length is about to seeding initiation region for reinforcement neck 2 in present embodiment
Be the 1/3~1/5 of entire seeding structure length) crystal intensity carried out reinforcement, due to this when effectivelying prevent crystal growth
Region crystal intensity is low and is broken, to reduce the probability of seeding structural break, reduces the risk of seeding failure, section
About production time.
Please continue to refer to Fig. 3, as a preferred embodiment of present embodiment, the reinforcement neck 2 is included at least：Draw and connects section
21, with first arc section 22 for drawing and connecing section 21 and connecting；Wherein：Described to draw that connect section 21 be reversed round bench shaped, top is the bottom of to
The cross-sectional diameter in portion is linearly gradually reduced, and top connects the seed crystal 1, and the cross-sectional diameter r2 of bottom is more than or equal to
The maximum cross section diameter of the contractible neck 3；The maximum cross section diameter r3 of first arc section 22 is more than or equal to the seed
The cross-sectional diameter r1 of crystalline substance 1, more specifically, the maximum cross section diameter r3 of first arc section 22 is the cross of the seed crystal 1
1-5 times of diameter of section r1, such as 2 times, 3 times or 4 times etc..Also, the minimum cross sectional diameter of the first arc section 22 be greater than etc.
In the minimum cross sectional diameter of the contractible neck 3.In the preferred embodiment, draws and connect section 21 and can exclude most of to be drawn by thermal stress
The dislocation risen, and the first arc section 22 can crystal intensity to seeding initiation region carry out reinforcement.Therefore, which exists
While enhancing seeding initiation region crystal intensity, additionally it is possible to reduce the dislocation line 4 of seeding initial phase.In addition, being worth mentioning
, as shown in figure 3, the first arc section 22 can be the flat arc structure of one section of similar rugby shape, i.e. the first arc section 22
Maximum cross section diameter r3 be greater than the first arc section 22 axial length；Certainly, in other schemes, the first arc section 22
Maximum cross section diameter r3 can also be equal to or less than the first arc section 22 axial length.
In addition, in the present embodiment, the contractible neck 3 includes at least please continue to refer to Fig. 3：N be sequentially connected the
Two arc sections 31；Wherein, n is the natural number more than or equal to 1.Referring to Fig. 4, the contractible neck 3 of this kind of structure can exclude quickly
Dislocation line 4 as caused by thermal stress.Meanwhile referring to Fig. 2, the cross-sectional diameter r due to crystal is bigger, temperature gradient G is got over
Greatly, reinforcement neck 2 can generate dislocation caused by temperature gradient in crystal growing process, referring to Fig. 5, the contraction of this kind of structure
Neck 3 can exclude dislocation line 4 caused by temperature gradient quickly, length and long brilliant time so as to shorten seeding structure.In addition,
If reinforcement neck 2 uses above-mentioned preferred embodiment, then the contractible neck 3 of this kind of structure eliminates major part by thermal stress in reinforcement neck 2
On the basis of caused dislocation, it can further shorten dislocation and exclude the time, to further shorten the length and length of seeding structure
The brilliant time.
Also, in the present embodiment, the minimum cross sectional diameter (namely two neighboring second of second arc section 31
The cross-sectional diameter of arc section junction) setting be suitable for meet following formula so that the intensity of the contractible neck 3 can support
The weight of the silicon single crystal：
Wherein, d is the minimum cross sectional diameter of second arc section 31, and D is the cross-sectional diameter of the silicon single crystal, L
For the length of the silicon single crystal.
In addition, in order to exclude dislocation line 4 more quickly, to shorten seeding length and the length brilliant time of contractible neck 3, as one
A preferred embodiment, the maximum cross section diameter d1 of second arc section 31 are that the minimum cross-section of second arc section 31 is straight
1.1~2 times of diameter d, such as 1.1 times, 1.25 times, 1.5 times, 1.75 times or 2 times.Please refer to the example of Fig. 6, the second arc section 31
Maximum cross section diameter d1 be 1.1 times of minimum cross sectional diameter d of second arc section 31.The example of Fig. 7 is please referred to,
The maximum cross section diameter d1 of second arc section 31 is 1.5 times of the minimum cross sectional diameter d of second arc section 31.Comparison
Fig. 6 and Fig. 7, it is not difficult to find that the example of Fig. 7 can exclude dislocation line 4 more quickly.But above-mentioned multiple is not the bigger the better, also
Need to consider more dislocation caused by temperature gradient and caused by dislocation exclude speed and reduce, and reduce contractible neck as far as possible
3 consumptive material (the maximum cross section diameter d1 of the second arc section 31 is bigger, and consumptive material is more), inventor obtain after numerous studies
Out, at 1.5 times of the minimum cross sectional diameter d that the maximum cross section diameter d1 of the second arc section 31 is second arc section 31
When, contractible neck 3 excludes the fastest of dislocation line 4.
It is to be understood that the maximum cross section diameter of the contractible neck 3 is actually the maximum of the second arc section 31
Cross-sectional diameter d1 namely it is described draw connect 21 bottom of section cross-sectional diameter r2 be more than or equal to the second arc section 31 maximum it is transversal
Face diameter d1.The minimum cross sectional diameter of the contractible neck 3 is actually the minimum cross sectional diameter d of the second arc section 31,
Namely first arc section 22 minimum cross sectional diameter be more than or equal to the second arc section 31 minimum cross sectional diameter d.
In addition, as a preferred embodiment, the contractible neck 3 further includes：It is connect with n-th of second arc section, 31 bottoms
Changeover portion (not shown)；Wherein, the changeover portion is cylindrical shape, and cross-sectional diameter is equal to second arc section 31
Minimum cross sectional diameter d.In order to form n the second connected arc sections 31, it is necessary to be adjusted back and forth in seeding technique long brilliant
Speed is just able to achieve, and since this technique has larger fluctuation, may be impacted to next processing procedure (i.e. lifting silicon single crystal),
Silicon single crystal is caused defect occur.Therefore, a changeover portion is formed by the preferred embodiment, to stablize fluctuation, improves silicon single crystal
The quality of production.
It should be noted that in the present embodiment, cross section is the plan view obtained after cutting some structure with horizontal plane
Shape, since seed crystal 1, the reinforcement neck 2 and the contractible neck 3 are coaxial, and the cross-sectional shape of their any structures for being included
It is circle, therefore, cross-sectional diameter namely diameter of a circle.Special emphasis is the cross-sectional diameter D namely subsequent silicon of silicon single crystal
The diameter of the silicon wafer obtained after single-crystal wafer.
The silicon single crystal seeding structure of present embodiment can not only reduce seeding structural break compared to the prior art
Probability, moreover it is possible to shorten the entire length of seeding structure, specific data are described as follows：
By taking the cross-sectional diameter D=300mm of silicon single crystal as an example, the cross-sectional diameter r1=10mm of seed crystal, the second circular arc
Minimum cross sectional diameter d >=4mm of section 31, maximum cross section diameter 1.1*d≤d1≤2*d of the second arc section 31 draw and connect section
Cross-sectional diameter r2 >=6mm of 21 bottoms, maximum cross section diameter r1≤r3≤5*r1 of the first arc section 22.Based on the above number
Entire length according to obtained silicon single crystal seeding structure is about 100~150mm.And the entire length of the seeding structure of the prior art
About 300mm (suitable with the length of the cross-sectional diameter of silicon single crystal), it is obvious that the silicon single crystal seeding structure of present embodiment
Entire length reduces by more than half, thus the long brilliant time also substantially reduces.
Referring to Fig. 8, second embodiment of the present invention is related to a kind of silicon single crystal seeding technique, for drawing such as the present invention
Silicon single crystal seeding structure involved in first embodiment includes at least following steps：
Step S1, the seed crystal of crystal orientation needed for silicon melt and the silicon single crystal are provided；
Step S2 will be lifted upwards after the seed crystal and the silicon melt welding；
Step S3 controls long brilliant speed, draws the reinforcement neck connecting with the seed crystal in advance；
Step S4 continues to draw the contractible neck connecting with the reinforcement neck；
Wherein, the seed crystal, the reinforcement neck and the contractible neck are coaxial.
It should be noted that the silicon single crystal seeding technique of present embodiment is realized by crystal-pulling furnace.
In step sl, silicon material is placed in crystal-pulling furnace in advance, is heated to being completely melt, form silicon melt；With laggard
Row secondary charging hangs slag and stablizes melt temperature.
In step s 2, seed crystal to be fallen into silicon melt surface in advance and carries out welding examination temperature, abundant welding generally requires 30~
120min。
In the present embodiment, the specific method of step S3 is：
The long brilliant speed of control slows down, and draws and connects section；Wherein, it is described draw connect section be reversed round bench shaped, top connect institute
Seed crystal is stated, the cross-sectional diameter of bottom is more than or equal to the maximum cross section diameter of the contractible neck；
Continue to control long brilliant speed first to accelerate to slow down again, draw with first arc section for drawing and connecing section and connecting, thus shape
At the reinforcement neck；Wherein：The maximum cross section diameter of first arc section is more than or equal to the cross-sectional diameter of the seed crystal.
In present embodiment, the specific method of step S4 is：
The long brilliant speed of control is first accelerated to slow down again, draws the second arc section connecting with the reinforcement neck；
Continue to control long brilliant speed first to accelerate to slow down again, repeats n times, draw n the second arc sections being sequentially connected, thus
Form the contractible neck：Wherein, n is the natural number more than or equal to 1.
Wherein, when drawing the contractible neck, the minimum cross sectional diameter of second arc section meets following formula, with
The intensity of the contractible neck is set to support the weight of the silicon single crystal：
Wherein, d is the minimum cross sectional diameter of second arc section, and D is the cross-sectional diameter of the silicon single crystal, and L is
The length of the silicon single crystal.
Further, the maximum cross section diameter of second arc section is the minimum cross-section of second arc section
1.1~2 times of diameter.
In addition, in the present embodiment, the specific method of step S4 can also include：
After drawing n-th of second arc sections, long brilliant constant airspeed is controlled, draws and connects with n-th of second arc section bottoms
The changeover portion connect；Wherein, the changeover portion is cylindrical shape, and the minimum that cross-sectional diameter is equal to second arc section is transversal
Face diameter.
In addition, in the present embodiment, in the long brilliant speed of control, by improving long brilliant temperature or improving pull rate
Slow down to control long brilliant speed, also, is accelerated by reducing long brilliant temperature or reducing pull rate to control long brilliant speed.
The silicon single crystal seeding technique of present embodiment, method is simple, greatly reduces the probability of seeding structural break, thus
The risk for reducing seeding failure, has been saved the production time, while being substantially reduced dislocation and being excluded the time, so as to shorten seeding
The length of structure and long brilliant time, more conducively technique produce.
The step of various methods divide above, be intended merely to describe it is clear, when realization can be merged into a step or
Certain steps are split, multiple steps are decomposed into, as long as comprising identical logical relation, all in the protection scope of this patent
It is interior；To adding inessential modification in algorithm or in process or introducing inessential design, but its algorithm is not changed
Core design with process is all in the protection scope of the patent.
It is not difficult to find that since present embodiment is for drawing silicon single crystal seeding involved in first embodiment of the invention
The method implementation of structure, the relevant technical details mentioned in first embodiment still effectively, are in the present embodiment
It reduces and repeats, which is not described herein again.Correspondingly, it is real that the relevant technical details mentioned in present embodiment are also applicable in first
It applies in mode.
In conclusion the present invention draws one section of reinforcement neck by designing in seeding initial phase, to seeding initiation region
Crystal intensity has carried out reinforcement, effectively prevent being broken when crystal growth since this region crystal intensity is low, to drop
The low probability of seeding structural break reduces the risk of seeding failure, has saved the production time.Also, on this basis, originally
Reinforcement neck is designed as connecing section and the first arc section is constituted by drawing by invention, while enhancing seeding initiation region crystal intensity,
Most of dislocation as caused by thermal stress can also be excluded, to reduce the dislocation line of seeding initial phase.
In addition, the present invention draws the contractible neck of one section of connection reinforcement neck by design, it is designed to a second to be connected of n
Arc section can exclude the dislocation as caused by thermal stress and dislocation caused by temperature gradient, quickly so as to shorten seeding structure
Length and the long brilliant time.Also, on the basis of reinforcement neck eliminates most of dislocation as caused by thermal stress, receipts of the invention
Necking down can further shorten dislocation and exclude the time, to further shorten length and the length brilliant time of seeding structure.
So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The principle of the present invention and its effect is only illustrated in above embodiment, and is not intended to limit the present invention.It is any
Those skilled in the art all without departing from the spirit and scope of the present invention, modifies above embodiment or is changed
Become.Therefore, such as those of ordinary skill in the art without departing from disclosed spirit and technical idea
Lower completed all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (13)
1. a kind of silicon single crystal seeding structure, which is characterized in that the silicon single crystal seeding structure includes at least：
Seed crystal；
The reinforcement neck being connect with the seed crystal；
The contractible neck being connect with the reinforcement neck；
Wherein, the seed crystal, the reinforcement neck and the contractible neck are coaxial.
2. silicon single crystal seeding structure according to claim 1, which is characterized in that the reinforcement neck includes at least：Draw and connect section,
With first arc section for drawing and connecing section and connecting；Wherein：
Described to draw that connect section be reversed round bench shaped, top connects the seed crystal, and the cross-sectional diameter of bottom is more than or equal to described
The maximum cross section diameter of contractible neck；
The maximum cross section diameter of first arc section is more than or equal to the cross-sectional diameter of the seed crystal.
3. silicon single crystal seeding structure according to claim 1, which is characterized in that the contractible neck includes at least：N successively
The second connected arc section；Wherein, n is the natural number more than or equal to 1.
4. silicon single crystal seeding structure according to claim 3, which is characterized in that the minimum cross-section of second arc section
The setting of diameter is suitable for meeting following formula, so that the intensity of the contractible neck can support the weight of the silicon single crystal：
Wherein, d is the minimum cross sectional diameter of second arc section, and D is the cross-sectional diameter of the silicon single crystal, and L is described
The length of silicon single crystal.
5. silicon single crystal seeding structure according to claim 4, which is characterized in that the maximum cross section of second arc section
Diameter is 1.1~2 times of the minimum cross sectional diameter of second arc section.
6. silicon single crystal seeding structure according to claim 3, which is characterized in that the contractible neck further includes：With n-th
The changeover portion of two arc section bottoms connection；Wherein, the changeover portion is cylindrical shape, and cross-sectional diameter is equal to second circle
The minimum cross sectional diameter of segmental arc.
7. a kind of silicon single crystal seeding technique, which is characterized in that the silicon single crystal seeding technique is appointed for drawing claim 1-6 such as
Silicon single crystal seeding structure described in one includes at least following steps：
The seed crystal of crystal orientation needed for silicon melt and the silicon single crystal are provided；
It will be lifted upwards after the seed crystal and the silicon melt welding；
The long brilliant speed of control, draws the reinforcement neck connecting with the seed crystal in advance；
Continue to draw the contractible neck connecting with the reinforcement neck；
Wherein, the seed crystal, the reinforcement neck and the contractible neck are coaxial.
8. silicon single crystal seeding technique according to claim 7, which is characterized in that the long brilliant speed of control, preparatory extraction and institute
The reinforcement neck of seed crystal connection is stated, specific method is：
The long brilliant speed of control slows down, and draws and connects section；Wherein, described to draw that connect section be reversed round bench shaped, top connects the seed
Crystalline substance, the cross-sectional diameter of bottom are more than or equal to the maximum cross section diameter of the contractible neck；
Continue to control long brilliant speed first to accelerate to slow down again, draw with first arc section for drawing and connecing section and connecting, to form institute
State reinforcement neck；Wherein：The maximum cross section diameter of first arc section is more than or equal to the cross-sectional diameter of the seed crystal.
9. silicon single crystal seeding technique according to claim 7, which is characterized in that continue what extraction was connect with the reinforcement neck
Contractible neck, specific method are：
The long brilliant speed of control is first accelerated to slow down again, draws the second arc section connecting with the reinforcement neck；
Continue to control long brilliant speed first to accelerate to slow down again, repeats n times, n the second arc sections being sequentially connected are drawn, to be formed
The contractible neck：Wherein, n is the natural number more than or equal to 1.
10. silicon single crystal seeding technique according to claim 9, which is characterized in that when drawing the contractible neck, described
The minimum cross sectional diameter of two arc sections meets following formula, so that the intensity of the contractible neck can support the silicon single crystal
Weight：
Wherein, d is the minimum cross sectional diameter of second arc section, and D is the cross-sectional diameter of the silicon single crystal, and L is described
The length of silicon single crystal.
11. silicon single crystal seeding technique according to claim 10, which is characterized in that the maximum of second arc section is transversal
Face diameter is 1.1~2 times of the minimum cross sectional diameter of second arc section.
12. silicon single crystal seeding technique according to claim 9, which is characterized in that continue extraction and connect with the reinforcement neck
Contractible neck, specific method further includes：
After drawing n-th of second arc sections, long brilliant constant airspeed is controlled, what extraction was connect with n-th of second arc section bottoms
Changeover portion；Wherein, the changeover portion is cylindrical shape, and the minimum cross-section that cross-sectional diameter is equal to second arc section is straight
Diameter.
13. silicon single crystal seeding technique according to claim 8 or claim 9, which is characterized in that in the long brilliant speed of control, pass through
It improves long brilliant temperature and improves pull rate perhaps to control long brilliant speed and slow down also, by reducing long brilliant temperature or reduction
Pull rate is accelerated to control long brilliant speed.
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