CN213652729U - Silicon carbide crystal micropipe healing device - Google Patents
Silicon carbide crystal micropipe healing device Download PDFInfo
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- CN213652729U CN213652729U CN202021496611.7U CN202021496611U CN213652729U CN 213652729 U CN213652729 U CN 213652729U CN 202021496611 U CN202021496611 U CN 202021496611U CN 213652729 U CN213652729 U CN 213652729U
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Abstract
The application discloses silicon carbide crystal microtubule healing device. The device includes: the vacuum growth chamber is internally provided with a crucible with an upward opening, and high-temperature melt can be contained in the crucible; the silicon carbide crystal loading device is positioned in the vacuum growth chamber and above the crucible and can move up and down; the temperature adjusting device can adjust the temperature inside the vacuum growth chamber, and comprises a heating device arranged outside the vacuum growth chamber, and the heating device comprises a heating coil; the pressure regulating and controlling device can regulate the pressure inside the vacuum growth chamber and comprises an air suction port and an air inlet, wherein the air suction port is arranged above the silicon carbide crystal loading device, and the air inlet is arranged below the silicon carbide crystal loading device. The device can form a gas flowing direction from bottom to top, and is more favorable for removing gas penetrating through the inner part of the microtube in the silicon carbide crystal, the gas removing efficiency in the microtube is improved, and the high-temperature molten liquid in the crucible can enter the inner part of the microtube to repair the microtube.
Description
Technical Field
The utility model relates to a carborundum single crystal production field, a carborundum crystal microtubule device for healing specifically says so.
Background
Silicon carbide has outstanding physical and electronic properties as a third-generation semiconductor material, and has proven to have broad application prospects and great commercial value as a wide-bandgap semiconductor material with high critical breakdown electric field and high thermal conductivity.
At present, the mature method for industrially growing silicon carbide is the PVT method, but the method has a lot of uncertainty. The PVT method grows in a closed graphite crucible, the growth process is invisible, and defects of polycrystal, polytype, micropipe and the like are inevitably brought in the growth process no matter the carbon-silicon ratio, the graphitization of the crucible or the defects of the seed crystal, so that the improvement of the yield of the silicon carbide is limited, and the performance of an electronic device is greatly influenced.
Among the various defects, micropipes are destructive defects to electronic devices, the origin of micropipes is clearly understood, but no mature method and apparatus are available as to how silicon carbide micropipes can be repaired.
SUMMERY OF THE UTILITY MODEL
To the defect that exists among the prior art, the utility model aims to provide a device is used in carborundum crystal microtubule healing.
The utility model provides a silicon carbide crystal microtubule device for healing, include: the vacuum growth chamber is internally provided with a crucible with an upward opening, and the crucible can contain high-temperature melt;
the melt can be silicon carbide melt or silicon melt; the temperature of the silicon carbide molten liquid is 1650-1900 ℃; the temperature of the silicon melt is 1350-1500 ℃;
the silicon carbide crystal loading device is positioned in the vacuum growth chamber and above the crucible and can move up and down;
the temperature adjusting device can adjust the temperature inside the vacuum growth chamber, and comprises a heating device arranged outside the vacuum growth chamber, and the heating device comprises a heating coil;
the pressure regulating device can regulate the pressure in the vacuum growth chamber and comprises an air suction port and an air inlet, wherein the air suction port is arranged above the silicon carbide crystal loading device, the air inlet is arranged below the silicon carbide crystal loading device, and the air inlet can be arranged on the side wall of the crucible;
the arrangement of the air inlet and the air exhaust opening can form a gas flowing direction from bottom to top, so that gas penetrating through the inner part of the micro-tube in the silicon carbide crystal can be removed, the gas removing efficiency in the micro-tube is improved, and high-temperature molten liquid in the crucible can rise and enter the silicon carbide crystal loading device to penetrate through the inner part of the micro-tube to repair the micro-tube.
The method comprises the following steps of dividing the micro-tube into three types, namely a penetrating micro-tube and a non-penetrating micro-tube, wherein two ends of the penetrating micro-tube penetrate through the surface of the silicon carbide crystal, and the non-penetrating micro-tube is divided into two conditions: microtubes having only one end penetrating the surface of the silicon carbide crystal, and microtubes located within the silicon carbide crystal;
the healing device and the using method thereof are suitable for repairing the penetrating microtube, when the microtube is positioned in the crystal, the molten liquid cannot enter the crystal and grow and crystallize, and when one end of the microtube is communicated with the surface of the crystal, bubbles can be generated in the microtube after repair; if most of the crystals are the non-penetrating microtubes, most of the non-penetrating microtubes can be changed into the penetrating microtubes by cutting the middle part of the crystals so as to achieve the purpose of repair.
In the device for healing the silicon carbide crystal micropipe, the silicon carbide crystal loading device comprises an upper tray with a downward opening and a lower tray with an upward opening,
go up the tray with be detachable connection between the tray down, and can form the cavity that holds silicon carbide crystal after connecting, first through-hole is established to the upper end of cavity, first through-hole with gaseous phase intercommunication between the extraction opening, the second through-hole is established to the lower extreme of cavity, the second through-hole can make the high temperature melt that holds in the crucible gets into in the cavity.
In the device for healing the silicon carbide crystal micropipe, at least one third through hole is formed in the side wall of the cavity, so that liquid phase communication is formed between the inside of the cavity and the outside of the cavity.
In the silicon carbide crystal micropipe healing device, the height of each third through hole is greater than or equal to the stacking height of the silicon carbide crystals contained in the cavity, so that the upper surface and the lower surface of each silicon carbide crystal such as a wafer can be fully contacted with the molten liquid.
In the device for healing the silicon carbide crystal micropipe, the silicon carbide crystal loading device further comprises a crystal carrier, the crystal carrier is a cylindrical body which is through from top to bottom, the inner wall of the cylindrical body is provided with at least one annular clamping groove, and each clamping groove can horizontally clamp and place a silicon carbide crystal wafer or crystal ingot;
in the device for healing the silicon carbide crystal micropipe, at least one fourth through hole is formed in the side wall of the crystal carrier, so that the molten liquid enters the crystal carrier from the side face of the crystal carrier;
and/or the cylindrical body is formed by longitudinally combining at least more than two arc-shaped cylinders.
In the silicon carbide crystal micropipe healing apparatus, the height of each fourth through hole is greater than or equal to the stacking height of the silicon carbide crystals loaded in the crystal carrier, so that the upper surface and the lower surface of each silicon carbide crystal such as a wafer can be fully contacted with the molten liquid.
In the device for healing the silicon carbide crystal micropipe, the cavity is cylindrical, an internal thread is arranged on the inner wall of the upper tray, an external thread is arranged on the outer wall of the lower tray, and the upper tray and the lower tray are matched with each other through the internal thread and the external thread to form the cavity;
and/or a hollow connecting rod is connected above the first through hole, the hollow connecting rod (top end) is connected with a driving device (stepping motor), and the driving device can drive the silicon carbide crystal loading device to move up and down through the hollow connecting rod;
one side of the air pumping port is communicated with the hollow connecting rod in a gas phase, and the other side of the air pumping port is communicated with an air pumping pump.
In the device for healing the silicon carbide crystal microtubule, the outer wall of the vacuum growth chamber is made of quartz;
the inner wall of the crucible is made of graphite;
the upper tray, the lower tray and the silicon carbide crystal loading device are made of graphite;
the outer wall and the lower bottom of the crucible are externally provided with heat preservation layers which are arranged in the vacuum growth chamber;
the vacuum growth chamber is externally provided with a heating device, and the heating device comprises a heating coil.
The utility model has the advantages as follows:
1. the silicon carbide crystal loading device is improved, so that the molten liquid can be fully contacted with the wafers or crystal ingots in the silicon carbide crystal loading device, and the healing effect of the penetrated micro-tubes is improved;
2. the positions of the air suction opening and the air inlet are reasonably arranged, so that the molten liquid can enter the micro-tube for crystallization healing in a mode of adjusting air pressure (such as reducing pressure);
3. the device can be applied to the silicon carbide crystal, and can effectively repair the microtubes of all the crystals;
4. the device and the using method thereof can heal the microtube after the growth of the silicon carbide crystal is finished, and the adjustment in the growth process of the silicon carbide crystal is not needed, so the operation is simple and convenient, and the implementation is convenient;
5. the utility model discloses device and application method thereof can effectively reduce the microtube quantity in the silicon carbide crystal, especially runs through the quantity of microtube to improve the quality of silicon carbide crystal.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
FIG. 1 is a cross-sectional view of an apparatus for the healing of silicon carbide crystal micropipes.
FIG. 2 is an enlarged front view of the silicon carbide crystal (wafer) loading apparatus of FIG. 1.
Figure 3 is a cross-sectional view of the silicon carbide crystal (wafer) loading apparatus shown in figure 2.
FIG. 4 is a front view of a silicon carbide crystal (ingot) loading apparatus.
FIG. 5 is a cross-sectional view of the silicon carbide crystal (ingot) loading apparatus shown in FIG. 4.
FIG. 6 is a perspective view of the silicon carbide crystal micropipe collection apparatus of FIG. 1.
The reference numerals in the figures are as follows:
the device comprises a vacuum growth chamber 1, a crucible 2, a silicon carbide crystal loading device 3, a heating coil 4, an extraction opening 5, an upper tray 7, a lower tray 8, a cavity 9, a first through hole 10, a second through hole 11, a third through hole 12, a crystal carrier 13, a clamping groove 14, a silicon carbide wafer 15, a silicon carbide crystal ingot 16, a hollow connecting rod 17, an extraction pump 18, an outer heat-insulating layer 19, a gas pipeline 20, a fourth through hole 21, a stepping motor 22, a lower heat-insulating layer 23, a bracket 24, a first external thread 25, a second external thread 26, a quartz pipe sleeve 27 and an inert gas conveying pipeline 28.
Detailed Description
Example 1 apparatus for silicon carbide crystal micropipe healing
As shown in fig. 1 and 6, the apparatus for healing a micropipe in a silicon carbide crystal according to this embodiment includes: the crucible 2 with an upward opening is arranged in the vacuum growth chamber 1, and high-temperature melt liquid, such as silicon carbide melt liquid with the temperature of 1650-1900 ℃ or silicon melt liquid with the temperature of 1350-1500 ℃, can be contained in the crucible 2;
a silicon carbide crystal (e.g. wafer or ingot) loading device 3 which is positioned in the vacuum growth chamber 1 and above the crucible 2 and can move up and down so as to enable the silicon carbide crystal loading device 3 to move into the crucible 2 from the opening of the crucible 2, enable the silicon carbide crystal loaded by the silicon carbide crystal loading device 3 to be completely immersed in the high-temperature melt contained in the crucible and be moved out of the opening of the crucible 2 and completely separated from the high-temperature melt;
a temperature adjusting device capable of adjusting the temperature of the inside of the vacuum growth chamber 1 (the high-temperature melt and/or the crucible contained in the crucible); such as a heating coil 4 arranged outside the vacuum growth chamber 1 and a quartz pipe sleeve 27 filled with circulating cooling water;
the pressure regulating and controlling device can regulate the pressure inside the vacuum growth chamber 1, and comprises an air pumping hole 5 and an air inlet, wherein the air pumping hole 5 is arranged above the silicon carbide crystal loading device 3 and is externally connected with an air pumping pump 18, and the air inlet is arranged below the silicon carbide crystal loading device 3 and is specifically arranged at the side wall of the crucible and is externally connected with an inert gas conveying pipeline 28.
The arrangement of the air pumping port 5 and the air inlet can form a gas flowing direction from bottom to top when air is pumped and/or admitted, so that the gas in the silicon carbide crystal penetrating through the micro-tube can be discharged more conveniently, the gas discharging efficiency in the penetrating micro-tube is improved, and high-temperature molten liquid in the crucible can enter the penetrating micro-tube of the silicon carbide crystal in the silicon carbide crystal loading device to repair the micro-tube.
As shown in fig. 2-5, silicon carbide crystal loading apparatus 3 includes a downwardly opening upper tray 7 and an upwardly opening lower tray 8,
go up and be detachable connection between tray 7 and the lower tray 8, and can form the cavity 9 that holds silicon carbide crystal after connecting, first through-hole 10 is established to the upper end of cavity 9, and gaseous phase intercommunication between first through-hole 10 and the extraction opening 5, second through-hole 11 is established to the lower extreme of cavity 9, and second through-hole 11 can make the high temperature melt that holds in the crucible 2 get into in the cavity 9.
As shown in fig. 2 and 3, a plurality of third through holes 12 are uniformly distributed on the periphery of the sidewall of the cavity 9, so that liquid phase communication is formed between the inside of the cavity 9 and the outside of the cavity 9.
The height of each third through-hole 12 is greater than or equal to the stacking height of the silicon carbide crystals contained in the chamber 9 so that both upper and lower surfaces of each silicon carbide crystal such as a wafer or ingot can be brought into sufficient contact with the melt.
As shown in fig. 3, the silicon carbide crystal loading device 3 further includes a crystal carrier 13, the crystal carrier 13 is a through cylinder, a plurality of annular slots 14 parallel to each other are respectively disposed at different heights on the inner wall of the cylinder, each slot 14 can horizontally clamp a silicon carbide crystal (or a crystal ingot, but the thickness of the slot 14 corresponding to the crystal ingot is relatively large, and the number is relatively small);
preferably, the cylindrical body is formed by longitudinally combining at least two arc-shaped cylinders so as to facilitate taking and placing wafers or crystal ingots, and specifically, the crystal carrier 13 is formed by longitudinally combining two cylinders with semicircular cross sections to form a cylinder which is through from top to bottom;
a plurality of fourth through holes 21 are uniformly distributed on the side wall of the crystal carrier 13, so that the melt enters the crystal carrier 13;
the height of each fourth through-hole 21 is greater than or equal to the stacking height of the silicon carbide crystal held therein so that both upper and lower surfaces of each silicon carbide crystal such as a wafer can be brought into sufficient contact with the melt.
The cavity 9 is cylindrical, a first internal thread (not shown) is arranged on the inner wall of the upper tray 7, a first external thread 25 is arranged on the outer wall of the lower tray 8, and the upper tray 7 and the lower tray 8 are matched with each other through the first internal thread and the first external thread 25 to form the cavity 9;
and/or the upper part of the first through hole 10 is connected with a hollow connecting rod 17 through a second external thread 26 on the outer wall of the first through hole, the hollow connecting rod 17 (top end) is connected with a driving device (such as a stepping motor 22), and the driving device can drive the silicon carbide crystal loading device 3 to move up and down by driving the hollow connecting rod 17;
the air pumping port 5 is arranged on the side wall of the hollow connecting rod 17, one side of the air pumping port 5 is communicated with the inside of the hollow connecting rod 17 in a gas phase, and the other side of the air pumping port is communicated with the air pump 18 through a gas pipeline 20.
In the device for healing the silicon carbide crystal micropipe, the outer wall of the vacuum growth chamber 1 is made of quartz;
the inner wall of the crucible 2 is made of graphite or quartz;
the upper tray 8, the lower tray 9 and the silicon carbide crystal carrier 13 are made of graphite;
the outer wall and the lower bottom of the crucible 2 are externally provided with heat preservation layers which are arranged in the vacuum growth chamber 1, and the heat preservation layers comprise an outer heat preservation layer 19 and a lower heat preservation layer 23 as shown in figure 1.
The method for healing the silicon carbide crystal microtubules by using the device for healing the silicon carbide crystal microtubules comprises the following steps:
(1) polycrystalline silicon (or a cosolvent of polycrystalline silicon and carbon) is placed in the crucible 2;
(2) stacking a plurality of silicon carbide crystal wafers or crystal ingots containing the micropipes in a crystal carrier 13, then placing the silicon carbide crystal wafers or crystal ingots in a silicon carbide crystal loading device 3, and installing the silicon carbide crystal loading device 3 below a hollow connecting rod 17 and above a crucible 2 in a vacuum growth chamber 1; or directly placing a silicon carbide wafer or crystal ingot in the silicon carbide crystal loading device 3 without using the crystal carrier 13;
(3) washing the furnace: the vacuum degree in the test crucible 2 reaches 5 multiplied by 10-3Pa, introducing protective gas argon into the crucible 2 through a gas inlet, and inflating to an atmospheric pressure;
(4) raising the crucible 2 to a certain temperature (1300-1900 ℃) under the protection of argon atmosphere, so that polycrystalline silicon is completely melted, or carbon on the inner wall of the crucible 2 is melted into Si solution while polycrystalline silicon and cosolvent aluminum of carbon are completely melted to form SiC unsaturated solution (only used for healing the micropipes) or SiC saturated solution (which can be used for healing and/or extending the micropipes);
(5) the silicon carbide crystal loading device 3 is slowly put into the silicon melt or the SiC unsaturated melt in the crucible 2 through the hollow connecting rod 17,
(6) the air pressure in the crucible 2 is reduced to a certain pressure by using an air pump 18, the temperature of the melt is kept unchanged, and the melt is adsorbed and extruded into a penetrating micro-tube in a wafer or a crystal ingot through the pressure action and the capillary phenomenon;
(7) under certain growth temperature and growth pressure, the crystal is grown and crystallized in the molten liquid penetrating through the microtubes of the wafer or the crystal ingot;
(8) slowly pulling out the wafer or crystal ingot in the silicon carbide crystal loading device 3 by the pulling action of the hollow connecting rod 17, so that the wafer or crystal ingot is completely separated from the interface of the molten liquid;
(9) slowly inflating the silicon carbide crystal loading device 3 to atmospheric pressure through the air inlet, simultaneously slowly cooling the melt to room temperature through a certain cooling curve by a quartz pipe sleeve 28 filled with circulating cooling water, and then pulling out the wafer or crystal ingot in the silicon carbide crystal loading device 3 through the hollow connecting rod 17.
Those not described in detail in this specification are within the skill of the art. The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.
Claims (10)
1. An apparatus for silicon carbide crystal micropipe healing, the apparatus comprising:
the vacuum growth chamber is internally provided with a crucible with an upward opening, and the crucible can contain high-temperature melt;
the silicon carbide crystal loading device is positioned in the vacuum growth chamber and above the crucible and can move up and down;
the temperature adjusting device can adjust the temperature inside the vacuum growth chamber; the temperature adjusting device comprises a heating device arranged outside the vacuum growth chamber, and the heating device comprises a heating coil;
the pressure regulating and controlling device can regulate the pressure inside the vacuum growth chamber and comprises an air pumping hole and an air inlet, wherein the air pumping hole is formed above the silicon carbide crystal loading device, and the air inlet is formed below the silicon carbide crystal loading device.
2. The device for healing silicon carbide crystal micropipes of claim 1, wherein said silicon carbide crystal loading device comprises an upper tray with a downward opening and a lower tray with an upward opening,
go up the tray with be detachable connection between the tray down, and can form the cavity that holds silicon carbide crystal after connecting, first through-hole is established to the upper end of cavity, first through-hole with gaseous phase intercommunication between the extraction opening, the second through-hole is established to the lower extreme of cavity, the second through-hole can make the high temperature melt that holds in the crucible gets into in the cavity.
3. The device for healing silicon carbide crystal microtubules as claimed in claim 2, wherein the side wall of the cavity is provided with at least one third through hole, so that liquid phase communication is formed between the inside of the cavity and the outside of the cavity.
4. The device for healing silicon carbide crystal micropipes of claim 3, wherein the height of each third through hole is greater than or equal to the stacking height of the silicon carbide crystal contained in the cavity.
5. The device for healing silicon carbide crystal microtubules as claimed in any one of claims 2 to 4, wherein the silicon carbide crystal loading device further comprises a crystal carrier, the crystal carrier is a through cylinder, the inner wall of the cylinder is provided with at least one annular clamping groove, and each clamping groove can horizontally clamp and place a silicon carbide crystal wafer or crystal ingot.
6. The device for healing silicon carbide crystal micropipes of claim 5, wherein said crystal carrier has at least one fourth through hole in a sidewall thereof;
and/or the cylindrical body is formed by longitudinally combining at least more than two arc-shaped cylinders.
7. The apparatus for healing silicon carbide crystal micropipes of claim 6, wherein the height of each said fourth through hole is greater than or equal to the stacking height of said silicon carbide crystal held in said crystal carrier.
8. The device for healing silicon carbide crystal microtubules as claimed in claim 2, wherein the cavity is cylindrical, the inner wall of the upper tray is provided with internal threads, the outer wall of the lower tray is provided with external threads, and the cavity is formed between the upper tray and the lower tray by the mutual matching of the internal threads and the external threads.
9. The device for healing the silicon carbide crystal microtubules as claimed in claim 2, wherein a hollow connecting rod is connected above the first through hole, the hollow connecting rod is connected with a driving device, and the driving device can drive the silicon carbide crystal loading device to move up and down through the hollow connecting rod;
one side of the air pumping port is communicated with the hollow connecting rod in a gas phase, and the other side of the air pumping port is communicated with an air pumping pump.
10. The device for healing silicon carbide crystal microtubules as claimed in claim 2, wherein the outer wall of the vacuum growth chamber is made of quartz;
the inner wall of the crucible is made of graphite;
the upper tray, the lower tray and the silicon carbide crystal loading device are made of graphite;
and heat preservation layers are arranged outside the side wall and the bottom of the crucible and are arranged in the vacuum growth chamber.
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| CN202021496611.7U CN213652729U (en) | 2020-07-24 | 2020-07-24 | Silicon carbide crystal micropipe healing device |
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| CN202021496611.7U CN213652729U (en) | 2020-07-24 | 2020-07-24 | Silicon carbide crystal micropipe healing device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114182341A (en) * | 2021-12-22 | 2022-03-15 | 季华实验室 | High-purity crystal growth system and method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114182341A (en) * | 2021-12-22 | 2022-03-15 | 季华实验室 | High-purity crystal growth system and method |
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