CN212560515U - Growth device of silicon carbide single crystal - Google Patents
Growth device of silicon carbide single crystal Download PDFInfo
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- CN212560515U CN212560515U CN202020716816.5U CN202020716816U CN212560515U CN 212560515 U CN212560515 U CN 212560515U CN 202020716816 U CN202020716816 U CN 202020716816U CN 212560515 U CN212560515 U CN 212560515U
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Abstract
The utility model provides a silicon carbide single crystal growing device, which comprises a crystal growing furnace, a first crucible, a second crucible and a rotary lifting mechanism, wherein a furnace body cavity is formed inside the crystal growing furnace; a plurality of first through holes are distributed in the bottom of the first crucible; a plurality of second through holes communicated with the first through holes are distributed at the top of the second crucible, the second crucible is positioned below the first crucible, and the first crucible and the second crucible are both arranged in the furnace body cavity; the rotary lifting mechanism is connected with the first crucible and/or the second crucible. The utility model discloses it has a plurality of first through-holes to open first crucible bottom, and open at second crucible top has a plurality of second through-holes, can control first through-hole and second through-hole department in the state that communicates with each other of lining up in a flexible way, makes the rich silicon gas in the second crucible carry to the seed crystal direction, can compensate the unbalanced defect of silicon carbon ratio in the growth atmosphere in the first crucible, solves the unbalanced problem of silicon carbon ratio, avoids the formation of defects such as inclusion in the crystal growth process.
Description
Technical Field
The utility model relates to a growth device of silicon carbide single crystal, which belongs to the technical field of crystal growth.
Background
Silicon carbide (SiC) single crystal has excellent semiconductor physical properties such as high thermal conductivity, high breakdown voltage, extremely high carrier mobility, high chemical stability and the like, can be manufactured into high-frequency and high-power electronic devices and optoelectronic devices which work under the conditions of high temperature and strong radiation, has great application value in the fields of national defense, high technology, industrial production, power supply and power transformation, and is regarded as a third-generation wide-bandgap semiconductor material with great development prospect.
Silicon carbide (SiC) single crystal has excellent semiconductor physical properties such as high thermal conductivity, high breakdown voltage, extremely high carrier mobility, high chemical stability and the like, can be manufactured into high-frequency and high-power electronic devices and optoelectronic devices which work under the conditions of high temperature and strong radiation, has great application value in the fields of national defense, high technology, industrial production, power supply and power transformation, and is regarded as a third-generation wide-bandgap semiconductor material with great development prospect.
The growth process of growing the silicon carbide single crystal by the PVT method is carried out in a closed graphite crucible, so that the growth environment is in a carbon-rich atmosphere at high temperature. At the initial stage of crystal growth, the crystal growth interface is in a state of relative equilibrium of the silicon component and the carbon component because the vapor partial pressure of the silicon component is high. With the progress of crystal growth, the silicon component in the silicon carbide raw material is continuously sublimated and reduced, the loss of silicon is gradually serious, and the powder is gradually carbonized, so that the gas phase component in the growth chamber is gradually unbalanced and becomes a carbon-rich state. Under the growth environment rich in carbon, the front interface of the crystal growth has the enrichment of carbon and forms carbon inclusion defects. The defects of the inclusion body can induce the defects of micropipes, dislocation, stacking faults and the like, and the quality of the silicon carbide single crystal is seriously influenced.
SUMMERY OF THE UTILITY MODEL
In order to solve the problem, the utility model provides a growth device of silicon carbide single crystal, through the first crucible and the second crucible that set up from top to bottom, a plurality of first through-holes that first crucible bottom was seted up, a plurality of second through-holes that second crucible top was seted up can control the supplementary silicon atmosphere flow in a flexible way, has restrained the formation of various inclusions effectively, improves the quality of silicon carbide single crystal.
The technical scheme adopted by the application is as follows:
the present application provides a growth apparatus for a silicon carbide single crystal, the growth apparatus including:
the crystal growth furnace is internally provided with a furnace body cavity;
the bottom of the first crucible is distributed with a plurality of first through holes;
the top of the second crucible is provided with a plurality of second through holes communicated with the first through holes, the second crucible is positioned below the first crucible, and the first crucible are both arranged in the furnace body cavity;
a rotary lifting mechanism connected with the first crucible and/or the second crucible.
Furthermore, the plurality of first through holes are symmetrically distributed at the bottom of the first crucible, and the plurality of second through holes are symmetrically distributed at the top of the second crucible.
Further, the first through hole has a cross-sectional shape selected from one of a circle, a square, a rectangle, a diamond, an ellipse, and a polygon, and the second through hole has a cross-sectional shape selected from one of a circle, a square, a rectangle, a diamond, an ellipse, and a polygon.
Furthermore, the open area of the first through holes is 6-36% of the area of the bottom of the first crucible, and the open area of the second through holes is 6-36% of the area of the top of the second crucible.
Further, the size of the first through holes is the same as that of the second through holes, and the number of the first through holes is the same as that of the second through holes.
Further, the side wall of the bottom of the first crucible is radially inwards recessed to form a protrusion, and the top of the second crucible extends upwards to form a groove matched with the protrusion.
Furthermore, the first crucible and the second crucible are both of a cylindrical structure, the inner diameter of the first crucible is the same as that of the second crucible, and the height of the first crucible is greater than that of the second crucible.
Furthermore, the height of the second crucible is 1/5-1/2 of the height of the first crucible.
Furthermore, the rotary lifting mechanism comprises a supporting rod, a rotary lifting table and a motor, the rotary lifting table is fixed to the top of the supporting rod, the second crucible is fixed to the top of the rotary lifting table, and the supporting rod is in driving connection with the motor.
Further, a raw material area is arranged at the bottom of the first crucible, and seed crystals are bonded at the top of the first crucible; the bottom of the second crucible is provided with a raw material area, and the outer side of the crystal growth furnace is provided with a heating device.
The utility model has the advantages that:
(1) the utility model discloses a set up first crucible and second crucible, a plurality of first through-holes are seted up to first crucible bottom, a plurality of second through-holes are seted up at second crucible top, can control first through-hole and second through-hole department in the state that communicates with each other of lining up, make the gaseous phase composition in the second crucible carry to the seed crystal direction, because second crucible gaseous phase composition is rich silicon state, can compensate the silicon carbon ratio unbalance in the growth atmosphere in the first crucible, the defect that silicon atmosphere is not enough, can solve silicon carbon ratio unbalance problem well, avoid the appearance of structural defects such as crystal growth in-process microtubule, polytype dislocation, inclusion body.
(2) The utility model discloses a symmetry setting of first through-hole and second through-hole can conveniently control during the gaseous phase composition gets into first crucible in the second crucible, can adjust the flow of the silicon atmosphere of replenishment in a flexible way, reducible because defects such as silicon inclusion, microtubule that the silicon atmosphere replenishment is improper to cause.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
FIG. 1 is a schematic structural view of a silicon carbide single crystal growth apparatus according to the present invention;
FIG. 2 is a schematic view of the combination of the first crucible and the second crucible in the apparatus of the present invention;
FIG. 3 is a schematic diagram showing the separation state of the first crucible and the second crucible in the apparatus of the present invention;
wherein, 1, a crystal growth furnace; 2. a first crucible; 21. a first through hole; 3. a second crucible; 31. a second through hole; 4. a support bar; 5. a motor; 6. a protrusion; 7. and (4) a groove.
Detailed Description
The present application will be described in detail with reference to examples, but the present application is not limited to these examples.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, however, the present application may be practiced in other ways than those described herein, and therefore the scope of the present application is not limited by the specific embodiments disclosed below.
In addition, in the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present application.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "coupled," and the like are to be construed broadly and include, for example, fixed or removable connections or integral parts; the connection can be mechanical connection, electrical connection or communication; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. In the description herein, reference to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the application. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
Unless otherwise specified, the raw materials and reagents in the examples of the present application were purchased commercially.
Example 1
Referring to fig. 1, the present example 1 provides an apparatus for implementing a high-quality silicon carbide single crystal growth method, the apparatus includes a crystal growth furnace 1, a first crucible 2, a second crucible 3, and a rotary lifting mechanism, a furnace body chamber is formed inside the crystal growth furnace 1; a plurality of first through holes 21 are distributed at the bottom of the first crucible 2; a plurality of second through holes 31 communicated with the first through holes 21 are distributed at the top of the second crucible 3, the second crucible 3 is positioned below the first crucible 2, the first crucible 2 and the second crucible 3 are both arranged in the furnace body cavity, the bottom of the first crucible 2 is provided with a silicon carbide raw material area, and the top of the first crucible 2 is bonded with seed crystals; the bottom of the second crucible 3 is provided with a silicon carbide feedstock area. The rotary lifting mechanism is connected with the first crucible 2 and/or the second crucible 3 and is used for driving the first crucible 2 and/or the second crucible 3 to rotate and lift, so that the first through hole 21 and the second through hole 31 are in a dislocation state and at least partially overlapped state, and the size of the overlapped part of the first through hole 21 and the second through hole 31 is realized through rotation, so that the flow rate of gas-phase components in the second crucible 3 entering the first crucible 2 is regulated.
By arranging the crucibles at the upper and lower positions, when the first through hole 21 at the bottom of the first crucible 2 and the second through hole 31 at the top of the second crucible 3 are in a dislocation state, the first through hole 21 and the second through hole 31 are not communicated, and the raw material in the first crucible 2 is used for crystal growth. When the gas phase atmosphere of the first crucible 2 is in a silicon-carbon ratio imbalance state, the first through hole 21 at the bottom of the first crucible 2 and the second through hole 31 at the top of the second crucible 3 are in an at least partially overlapped state, a gas channel is formed, the first through hole 21 and the second through hole 31 are communicated, and the raw material in the second crucible 3 supplements the silicon atmosphere for the growth of crystals. The device regulates the size of the opening part of the gas channel of the first through hole 21 and the second through hole 31 through rotation, thereby regulating and controlling the flow of the gas phase component of the second crucible 3 entering the first crucible 2, effectively reducing the generation of the cladding body through controlling the flow of the silicon atmosphere, and improving the quality of crystals.
In a preferred embodiment of the present application, the plurality of first through holes 21 are symmetrically distributed at the bottom of the first crucible 2, and the plurality of second through holes 31 are symmetrically distributed at the top of the second crucible 3. By arranging the first through hole 21 and the second through hole 31 symmetrically, the gas phase component in the second crucible 3 uniformly enters the first crucible 2 for the growth of the crystal.
In a preferred embodiment of the present application, the open area of the first through holes 21 is 6 to 36% of the area of the bottom of the first crucible 2, and the open area of the second through holes 31 is 6 to 36% of the area of the top of the second crucible 3. Preferably, the open area of the first through holes 21 is 12 to 30% of the bottom area of the first crucible 2, and the open area of the second through holes 31 is 12 to 30% of the top area of the second crucible 3. More preferably, the open area of the first through holes 21 is 25% of the area of the bottom of the first crucible 2. The open area of the first through-hole 21 and the second through-hole 31 determines the maximum flow rate of the gas phase component in the second crucible 3 into the first crucible 2. When the area of the opening is too small, the silicon atmosphere cannot be supplemented in time, and the generation of a carbon coating body is easy to cause; when the area of the opening is too large, excessive silicon atmosphere enters the first crucible, and the formation of a silicon coating is likely to occur.
In a preferred embodiment of the present application, the cross-sectional shape of the first through-hole 21 is selected from one of a circle, a square, a rectangle, a diamond, an ellipse, and a polygon, and the cross-sectional shape of the second through-hole 31 is selected from one of a circle, a square, a rectangle, a diamond, an ellipse, and a polygon.
Preferably, the cross-sectional shape of first through-hole 21 and the cross-sectional shape of second through-hole 31 are circular, first through-hole 21 and second through-hole 31 are circular, more preferably, the aperture of first through-hole 21 and second through-hole 31 is 1 ~ 10000mm, and the aperture size of first through-hole 21 and second through-hole 31 can not cause the influence to the rate of gaseous phase composition upwards transmission. In the crystal growth process, due to the temperature difference in the axial direction in the crucible, the powder for crystal growth is easy to gather in the gas phase transmission process, the grain diameter of the powder for crystal growth is far larger than that of carbon particles, most of the dropped powder is carbon particles, and the carbon particles are reduced to be transported to the surface of the seed crystal to a certain extent.
In a preferred embodiment of the present application, the size of the first through holes 21 is the same as the size of the second through holes 31, and the number of the first through holes 21 is the same as the number of the second through holes 31. Preferably, the cross-sectional shape of the first through-hole 21 and the cross-sectional shape of the second through-hole 31 are elongated rectangles. The arrangement of the slender rectangular shape enables gas phase components to be more uniformly transported to the surface of the seed crystal in the radial direction, and the growth quality of the crystal is good. By setting the size and number of the first through holes 21 to be the same as those of the second through holes 31, it is possible to flexibly and conveniently achieve uniform change of the overlapped portions of the first through holes 21 and the second through holes 31 by rotation of the second crucible 3.
In a preferred embodiment of the present application, the bottom side wall of the first crucible 2 is recessed radially inwards to form a protrusion 6, and the top of the second crucible 3 extends upwards to form a groove 7 matched with the protrusion 6. The protrusion 6 is embedded in the groove 7, so that the bottom of the first crucible 2 is abutted against the top of the second crucible 3, the second crucible 3 is free of resistance when rotating and lifting, and the stability of a temperature field in the movement process is ensured.
In one embodiment of the present application, the first crucible 2 and the second crucible 3 are both cylindrical structures, the inner diameter of the first crucible 2 is the same as the inner diameter of the second crucible 3, and the height of the first crucible 2 is greater than the height of the second crucible 3. The height of the second crucible 3 is 1/5-1/2 of the height of the first crucible 2. The mass ratio of the silicon carbide raw material in the first crucible 2 to the silicon carbide raw material in the second crucible 3 is 2-5: 1, the raw material in the first crucible 2 is larger than the raw material in the second crucible 3, the raw material space is saved by optimizing the height of the first crucible 2 and the height of the second crucible 3, the gas-phase components in the second crucible 3 enter the first crucible 2 more quickly, and the utilization rate of the raw materials is improved while the crystal quality is ensured through the configuration of the silicon carbide raw material in the first crucible 2 and the silicon carbide raw material in the second crucible 3.
In a preferred embodiment of the present application, the rotary lifting mechanism comprises a support rod 4, a rotary lifting platform and a motor 5, the rotary lifting platform is fixed on the top of the support rod 4, the first crucible 2 or the second crucible 3 is fixed on the top of the rotary lifting platform, and the support rod 4 is in driving connection with the motor 5. The rotary lifting mechanism can also be other rotary lifting mechanisms commonly used in the art as long as the rotation and lifting of the first crucible and/or the second crucible can be achieved.
In one embodiment of the present application, the first crucible 2 is provided with a raw material region at the bottom and a seed crystal bonded at the top; the bottom of the second crucible 3 is provided with a raw material area, and the outer side of the crystal growth furnace 1 is provided with a heating device. A first silicon carbide raw material is placed at the bottom of the first crucible 2, and a second silicon carbide raw material is placed at the bottom of the second crucible 3. The heating device is used for heating the raw materials in the first crucible 2 and the second crucible 3. The heating device can be arranged in a segmented mode or in an integrated mode. Preferably, the heating device comprises a first intermediate frequency induction heating coil and a second intermediate frequency induction heating coil, the first intermediate frequency induction heating coil is arranged at the outer side of the first crucible 2 and is used for heating the first crucible 2; the second intermediate frequency induction heating coil is arranged on the outer side of the second crucible 3 and used for heating the second crucible 3, when the carbon-silicon ratio of the first crucible is unbalanced, the second crucible 3 starts to be heated to provide gas phase components for crystal growth, and the gas phase components are intersected in an integrated arrangement mode, so that the consumption of the gas phase components can be reduced.
Example 2
In a specific embodiment, there is provided a method of producing a silicon carbide single crystal using the crystal growth apparatus with reference to fig. 1, the method including the steps of:
(1) and (3) assembling: placing a first silicon carbide raw material at the bottom of a first crucible, and bonding seed crystals at the top of the first crucible; placing a second silicon carbide raw material at the bottom of a second crucible, wherein the mass ratio of the first silicon carbide raw material to the second silicon carbide raw material is 2-5: 1, and the second crucible is arranged below the first crucible;
(2) a heating stage: placing the assembled first crucible and second crucible in a crystal growth furnace, vacuumizing the crystal growth furnace, heating to 1500-1800 ℃, introducing protective gas, and keeping the temperature stable for 2-3 hours under the pressure of 5-10 kpa, wherein impurities such as silicon carbide raw materials and water vapor, grease and the like in the crucibles can be removed in the stable stage;
(3) a first crystal growth stage: controlling the first crystal growth stage, wherein the heating temperature in the first crucible is 1800-2400 ℃, and the crystal growth pressure is 5-100 mbar; the bottom of the first crucible is abutted against the top of the second crucible, the first through hole and the second through hole are in dislocation states, so that the first through hole and the second through hole are in closed states, a raw material gas phase in a raw material area in the first crucible is transmitted to seed crystals for crystal growth, and the heating time in the first stage is 40-160 h; the second crucible is not heated;
(4) a second crystal growth stage: when the silicon-carbon ratio of gas-phase components in the first crucible is less than 1.1, the first through hole and the second through hole are controlled to be at least partially overlapped by rotation, so that the raw material gas phase in the raw material area in the second crucible is transmitted to seed crystals for crystal growth; heating temperature of the first crucible and the second crucible is controlled to be 1800-2400 ℃ through heating, heating time is 30-60 hours, and crystal growth pressure is the same as crystal growth pressure in a first crystal growth stage until crystal growth is finished;
the specific control method comprises the following steps: the rotary lifting mechanism drives the first crucible to move upwards, and/or the second crucible moves downwards for a certain distance, such as 5mm, and after the action is completed, the lower motor drives the first crucible and/or the second crucible to rotate, so that the atmosphere through holes of the first crucible and the second crucible are at least partially aligned; the rotary lifting mechanism drives the first crucible to move downwards and/or the second crucible to move upwards, a gas channel is formed after at least part of the first through hole and the second through hole are overlapped, and then the silicon carbide atmosphere in the second crucible can be continuously volatilized, so that the silicon-carbon gas phase component environment in the growth chamber is improved, and the crystal quality is improved;
further controlling the area of the overlapped part by the rotation of the first crucible and/or the second crucible, thereby regulating and controlling the flow of the gas phase atmosphere in the raw material area in the second crucible, and transmitting the raw material gas phase in the raw material area in the second crucible to the seed crystal for crystal growth; the rate of increasing the area ratio of the overlapped part to the top of the second crucible is 0.2%/h-0.6%/h;
(4) and cooling the furnace body to room temperature, and opening the crucible to obtain the high-quality silicon carbide single crystal.
The silicon carbide single crystal is prepared according to the method, the silicon carbide single crystal 1#, the silicon carbide single crystal 2#, the silicon carbide single crystal 3#, and the silicon carbide single crystal 4# are respectively prepared, the size of the opening part of the gas channel and the mass ratio of the first silicon carbide raw material to the second silicon carbide raw material in the preparation method are respectively changed, and the comparative silicon carbide single crystal D1#, the comparative silicon carbide single crystal D2#, the comparative silicon carbide single crystal D3#, and the comparative silicon carbide single crystal D4# are prepared, wherein the specific process parameters of the samples are shown in Table 1.
TABLE 1
Micropipes, polytypes, dislocations including screw dislocations (TSD for short) and plane dislocations (BPD for short), inclusions, and polytype defects of the prepared silicon carbide single crystal 1# to 4# and the comparative silicon carbide single crystal D1# to D4# were detected with reference to table 1, and the yield of the silicon carbide single crystal, which is the ratio of the quality of the finally prepared silicon carbide single crystal to the silicon carbide raw materials (including the first silicon carbide raw material and the second silicon carbide raw material), was calculated, and the results are shown in table 2.
TABLE 2
As is apparent from the results of table 2, the present application reduced various defects of the produced silicon carbide single crystal by controlling the first through-hole and second through-hole gas passage opening portions. By comparing the comparative silicon carbide single crystal D1#, the comparative silicon carbide single crystal D2#, and the silicon carbide single crystal 1#, the rate of increase in the ratio of the opening portion of the gas passage to the area of the top of the second crucible was excessively large or small, so that various defects of the obtained silicon carbide single crystal were more evident. By comparing the comparative silicon carbide single crystal D3#, the comparative silicon carbide single crystal D4#, and the silicon carbide single crystal 1#, too large or too small a ratio of the first silicon carbide raw material to the second silicon carbide raw material has a large influence on various defects and yield of the silicon carbide single crystal.
The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the system embodiment, since it is substantially similar to the method embodiment, the description is simple, and for the relevant points, reference may be made to the partial description of the method embodiment.
The above description is only an example of the present application, and the protection scope of the present application is not limited by these specific examples, but is defined by the claims of the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the technical idea and principle of the present application should be included in the protection scope of the present application.
Claims (10)
1. An apparatus for growing a silicon carbide single crystal, comprising:
the crystal growth furnace is internally provided with a furnace body cavity;
the bottom of the first crucible is distributed with a plurality of first through holes;
the top of the second crucible is provided with a plurality of second through holes communicated with the first through holes, the second crucible is positioned below the first crucible, and the first crucible are both arranged in the furnace body cavity;
a rotary lifting mechanism connected with the first crucible and/or the second crucible.
2. The apparatus for growing a silicon carbide single crystal according to claim 1, wherein the plurality of first through holes are symmetrically distributed at a bottom of the first crucible, and the plurality of second through holes are symmetrically distributed at a top of the second crucible.
3. The apparatus for growing a silicon carbide single crystal according to claim 1, wherein the open area of the first plurality of through holes is 6 to 36% of the area of the bottom of the first crucible, and the open area of the second plurality of through holes is 6 to 36% of the area of the top of the second crucible.
4. The silicon carbide single crystal growth apparatus according to claim 1, wherein the first through-hole has a cross-sectional shape selected from one of a circle, a square, a rectangle, a diamond, an ellipse, and a polygon,
the cross-sectional shape of the second through-hole is selected from one of a circle, a square, a rectangle, a diamond, an ellipse, and a polygon.
5. The silicon carbide single crystal growth apparatus according to claim 1, wherein the first through holes have the same size as the second through holes, and the number of the first through holes is the same as the number of the second through holes.
6. An apparatus for growing a silicon carbide single crystal as claimed in claim 1, wherein the bottom side wall of the first crucible is recessed radially inwardly to form a projection, and the top of the second crucible is extended upwardly to form a recess matching the projection.
7. An apparatus for growing a silicon carbide single crystal according to claim 1, wherein the first crucible and the second crucible are each a cylindrical structure, an inner diameter of the first crucible is the same as an inner diameter of the second crucible, and a height of the first crucible is larger than a height of the second crucible.
8. The apparatus for growing a silicon carbide single crystal according to claim 7, wherein the height of the second crucible is 1/5 to 1/2 of the height of the first crucible.
9. The apparatus for growing a silicon carbide single crystal according to claim 1, wherein the rotary elevating mechanism comprises a support rod, a rotary elevating table and a motor, the rotary elevating table is fixed to the top of the support rod, the second crucible is fixed to the top of the rotary elevating table, and the support rod is drivingly connected to the motor.
10. The apparatus for growing a silicon carbide single crystal according to claim 1, wherein the first crucible is provided at a bottom thereof with a source material region and at a top thereof with a seed crystal bonded thereto; the bottom of the second crucible is provided with a raw material area, and the outer side of the crystal growth furnace is provided with a heating device.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113249792A (en) * | 2021-06-22 | 2021-08-13 | 苏州优晶光电科技有限公司 | Silicon carbide crystal growth method and equipment for adjusting component balance |
| CN114561693A (en) * | 2022-02-14 | 2022-05-31 | 江苏集芯半导体硅材料研究院有限公司 | Single crystal growing apparatus |
| CN115679449A (en) * | 2022-12-30 | 2023-02-03 | 浙江晶越半导体有限公司 | Composite crucible for growing silicon carbide crystals by sublimation method |
| CN116575122A (en) * | 2023-07-13 | 2023-08-11 | 宁波合盛新材料有限公司 | N-type silicon carbide crystal, preparation method and growth device |
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2020
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113249792A (en) * | 2021-06-22 | 2021-08-13 | 苏州优晶光电科技有限公司 | Silicon carbide crystal growth method and equipment for adjusting component balance |
| CN114561693A (en) * | 2022-02-14 | 2022-05-31 | 江苏集芯半导体硅材料研究院有限公司 | Single crystal growing apparatus |
| CN114561693B (en) * | 2022-02-14 | 2023-08-04 | 江苏集芯半导体硅材料研究院有限公司 | Single crystal growing apparatus |
| CN115679449A (en) * | 2022-12-30 | 2023-02-03 | 浙江晶越半导体有限公司 | Composite crucible for growing silicon carbide crystals by sublimation method |
| CN116575122A (en) * | 2023-07-13 | 2023-08-11 | 宁波合盛新材料有限公司 | N-type silicon carbide crystal, preparation method and growth device |
| CN116575122B (en) * | 2023-07-13 | 2023-10-03 | 宁波合盛新材料有限公司 | N-type silicon carbide crystal, preparation method and growth device |
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