CN206359654U - Single crystal growing furnace - Google Patents
Single crystal growing furnace Download PDFInfo
- Publication number
- CN206359654U CN206359654U CN201621382087.4U CN201621382087U CN206359654U CN 206359654 U CN206359654 U CN 206359654U CN 201621382087 U CN201621382087 U CN 201621382087U CN 206359654 U CN206359654 U CN 206359654U
- Authority
- CN
- China
- Prior art keywords
- heater
- crucible
- drawbar
- furnace
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
The single crystal growing furnace that temperature of thermal field change is impacted to monocrystalline silicon production quality can be reduced the utility model discloses a kind of.The single crystal growing furnace, including body of heater, silica crucible；Crystal seed lifting rotating mechanism is provided with above the body of heater；The lower portion of furnace body is provided with crucible drawbar；Described crucible drawbar one end is provided with pincers pot prop disk, and the silica crucible is arranged on pincers pot prop disk；The other end of the crucible drawbar is provided with crucible and rises rotating mechanism；Heater is provided with furnace chamber, heat-insulation layer is provided between heater and the inwall of furnace chamber；Furnace chamber bottom is provided with lower heater；Furnace chamber bottom, which is provided with boss, crucible drawbar, is provided with the annular sleeve matched with boss, and the annular sleeve coordinates with boss；It is provided with the crucible drawbar in supporting plate, the supporting plate and is provided with crucible heater.The heat losses in furnace chamber can be avoided using the single crystal growing furnace, it is ensured that the temperature of thermal field in furnace chamber, so as to ensure the production of monocrystalline silicon, it is ensured that the product quality of monocrystalline silicon.
Description
Technical field
The utility model is related to silicon single crystal manufacturing apparatus, especially a kind of single crystal growing furnace.
Background technology
It is known：With the extensive use of solar energy, the demand to monocrystalline silicon is also increasing.Existing monocrystalline silicon production
Equipment is generally single crystal growing furnace.
Single crystal growing furnace is a kind of in inert nitrogen gas, helium are primary climate, with graphite heater by polycrystalline such as polysilicons
Melt material, with the equipment of Grown by CZ Method dislocation-free monocrystalline.Existing single crystal growing furnace extends due to crucible drawbar from bottom of furnace body
Into body of heater, therefore crucible drawbar can produce influence to the temperature of the thermal field in furnace chamber, so that the production matter of monocrystalline silicon can be influenceed
Amount.
Utility model content
Technical problem to be solved in the utility model, which is to provide one kind, can reduce temperature of thermal field change to monocrystalline silicon life
The single crystal growing furnace that yield and quality is impacted.
The utility model solves the technical scheme that its technical problem used：Single crystal growing furnace, including body of heater, silica crucible；
Crystal seed lifting rotating mechanism is provided with above the body of heater；The lower portion of furnace body is provided with crucible drawbar；The crucible drawbar one
End is provided with pincers pot prop disk out of the bottom of body of heater extends to body of heater furnace chamber, and the silica crucible is arranged on pincers pot prop disk
On；The other end of the crucible drawbar is located at the lower section of body of heater, and is provided with crucible rising rotating mechanism；The furnace chamber of the body of heater
Inside it is provided between heater, the inwall of the heater and body of heater and is provided with heat-insulation layer；The furnace chamber bottom of the body of heater
It is provided with lower heater；The furnace chamber bottom of the body of heater is provided with boss, and the crucible drawbar runs through boss from bottom of furnace body
Extend in furnace chamber, the annular sleeve matched with boss is provided with the crucible drawbar；The annular sleeve coordinates with boss；It is described
Supporting plate is provided with crucible drawbar, the supporting plate is provided with crucible on the lower section of pincers pot prop disk, the supporting plate and added
Hot device.
It is preferred that, the supporting plate is annular backup pad.
It is preferred that, the heater uses resistance heating plate.
Further, the annular sleeve outer surface is provided with thermal insulation layer.
It is preferred that, the annular sleeve is manufactured using graphite.
The beneficial effects of the utility model are：Single crystal growing furnace described in the utility model, due to the bottom in the inner chamber of body of heater
Boss is provided with, is set on crucible drawbar due to the annular sleeve that boss is matched, passes through the cooperation of annular sleeve and boss, it is to avoid stove
Intracavitary heat transfer is on crucible drawbar, while crucible heater is provided with below crucible pallet, because crucible heater is set
Put on crucible drawbar, therefore crucible heater can follow crucible drawbar to move up and down together, keep between silica crucible
Apart from constant, so as to ensure that non-silica crucible is heated always, it is ensured that the temperature of silica crucible, so as to ensure the suitable of monocrystalline silicon
Profit production.
Brief description of the drawings
Fig. 1 is the structural representation of single crystal growing furnace in the utility model embodiment；
Fig. 2 is the structural representation after crucible drawbar rises in single crystal growing furnace in the utility model embodiment；
Indicated in figure：1- bodies of heater, 2- crucible drawbars, 3- crucible pallets, 4- silica crucibles, 5- heaters, 6- bottoms add
Hot device, 7- heat-insulation layers, 8- supporting plates, 9- crucible heaters, 10- annular sleeves, 11- boss, 12- crystal seeds lifting rotating mechanism,
13- crucibles rise rotating mechanism.
Embodiment
The utility model is further illustrated with reference to the accompanying drawings and examples.
As shown in Figure 1 to Figure 2, single crystal growing furnace described in the utility model, including body of heater 1, silica crucible 4；On the body of heater 1
Side is provided with crystal seed lifting rotating mechanism 12；The bottom of body of heater 1 is provided with crucible drawbar 2；Described one end of crucible drawbar 2 is from stove
The bottom of body 1 is extended in the furnace chamber of body of heater 1, and is provided with pincers pot prop disk 3, and the silica crucible 4 is arranged on pincers pot prop disk 3
On；The other end of the crucible drawbar 2 is located at the lower section of body of heater 1, and is provided with crucible rising rotating mechanism 13；The body of heater 1
Furnace chamber in be provided between heater 5, the inwall of the heater 5 and body of heater 1 and be provided with heat-insulation layer 7；The body of heater 1
Furnace chamber bottom be provided with lower heater 6；The furnace chamber bottom of the body of heater 1 is provided with boss 11, and the crucible drawbar 2 is from stove
The bottom of body 1 is extended in furnace chamber through boss 11, and the annular sleeve 10 matched with boss 11 is provided with the crucible drawbar 2；Institute
Annular sleeve 10 is stated with boss 11 to coordinate；Supporting plate 8 is provided with the crucible drawbar 2, the supporting plate 8 is located at pincers pot prop disk 3
Lower section, be provided with crucible heater 9 in the supporting plate 8.
During use, due to being provided with boss 11 in the bottom of the inner chamber of body of heater 1, set on crucible drawbar 2
There is the annular sleeve 10 matched with boss 11, pass through the cooperation of annular sleeve 10 and boss 11, it is to avoid heat transfer is to crucible in furnace chamber
On drawbar 2, while crucible heater 9 is provided with below crucible pallet 2, because crucible heater 9 is arranged on crucible drawbar 2
On, therefore crucible heater 9 can follow crucible drawbar 2 to move up and down together, keep constant with the distance between silica crucible 4,
So as to ensure always to heat silica crucible 4, it is ensured that the temperature of silica crucible 4, so as to ensure the smooth production of monocrystalline silicon.
In order to increase the erection space that supporting plate 8 installs crucible heater 8；Specifically, the supporting plate 8 is annular brace
Plate.
For the ease of controlling the heating-up temperature of heater 5, it is preferred that the heater 5 uses resistance heating plate.
In order to avoid the heat transfer in furnace chamber to greatest extent to crucible drawbar 2, further, outside the annular sleeve 10
Surface is provided with thermal insulation layer.
For the ease of manufacture, while being easy to insulation；It is preferred that, the annular sleeve 10 is manufactured using graphite.
Claims (5)
1. single crystal growing furnace, it is characterised in that：Including body of heater (1), silica crucible (4)；Crystal seed lifting is provided with above the body of heater (1)
Rotating mechanism (12)；Body of heater (1) bottom is provided with crucible drawbar (2)；Described crucible drawbar (2) one end is from body of heater (1)
Bottom is extended in the furnace chamber of body of heater (1), and is provided with pincers pot prop disk (3), and the silica crucible (4) is arranged on pincers pot prop disk
(3) on；The other end of the crucible drawbar (2) is located at the lower section of body of heater (1), and is provided with crucible rising rotating mechanism (13)；
Heater (5) is provided with the furnace chamber of the body of heater (1), is provided between the heater (5) and the inwall of body of heater (1)
Heat-insulation layer (7)；The furnace chamber bottom of the body of heater (1) is provided with lower heater (6)；The furnace chamber bottom of the body of heater (1) is set
There is boss (11), the crucible drawbar (2) is extended in furnace chamber from body of heater (1) bottom through boss (11), the crucible drawbar
(2) annular sleeve (10) matched with boss (11) is provided with；The annular sleeve (10) coordinates with boss (11)；The crucible is dragged
Supporting plate (8) is provided with bar (2), the supporting plate (8), which is located on the lower section of pincers pot prop disk (3), the supporting plate (8), to be set
There is crucible heater (9).
2. single crystal growing furnace as claimed in claim 1, it is characterised in that：The supporting plate (8) is annular backup pad.
3. single crystal growing furnace as claimed in claim 1, it is characterised in that：The heater (5) uses resistance heating plate.
4. single crystal growing furnace as claimed in claim 1, it is characterised in that：Annular sleeve (10) outer surface is provided with thermal insulation layer.
5. single crystal growing furnace as claimed in claim 1, it is characterised in that：The annular sleeve (10) is manufactured using graphite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621382087.4U CN206359654U (en) | 2016-12-15 | 2016-12-15 | Single crystal growing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621382087.4U CN206359654U (en) | 2016-12-15 | 2016-12-15 | Single crystal growing furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206359654U true CN206359654U (en) | 2017-07-28 |
Family
ID=59374251
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621382087.4U Expired - Fee Related CN206359654U (en) | 2016-12-15 | 2016-12-15 | Single crystal growing furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206359654U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110735180A (en) * | 2018-07-20 | 2020-01-31 | 上海新昇半导体科技有限公司 | crystal pulling furnace |
| CN112501683A (en) * | 2020-11-16 | 2021-03-16 | 连城凯克斯科技有限公司 | Height adjusting device for quartz crucible in single crystal furnace of semiconductor equipment |
| CN115354388A (en) * | 2022-08-24 | 2022-11-18 | 宇泽半导体(云南)有限公司 | Silicon single crystal rod with cross-shaped cross section and growth device and growth method thereof |
-
2016
- 2016-12-15 CN CN201621382087.4U patent/CN206359654U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110735180A (en) * | 2018-07-20 | 2020-01-31 | 上海新昇半导体科技有限公司 | crystal pulling furnace |
| CN112501683A (en) * | 2020-11-16 | 2021-03-16 | 连城凯克斯科技有限公司 | Height adjusting device for quartz crucible in single crystal furnace of semiconductor equipment |
| CN115354388A (en) * | 2022-08-24 | 2022-11-18 | 宇泽半导体(云南)有限公司 | Silicon single crystal rod with cross-shaped cross section and growth device and growth method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170728 Termination date: 20201215 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |