KR101238162B1 - Metal organic chemical vapor deposition apparatus - Google Patents

Abstract

PURPOSE: A metal organic chemical vapor deposition apparatus is provided to easily manufacture a thin film by using a gas guide member. CONSTITUTION: A reactor body includes a bottom wall and a side wall. A lid assembly covers the upper part of the reactor body. A susceptor(130) has an outlet. A top cover(160) is arranged in the lower part of the lid assembly. A gas guide member(140) delivers gas to the central part of the reactor body.

Description

Organometallic Chemical Vapor Deposition Reactor {METAL ORGANIC CHEMICAL VAPOR DEPOSITION APPARATUS}

The present invention relates to a chemical vapor deposition reactor, and more particularly to an organometallic chemical vapor deposition reactor.

As high-efficiency light emitting diodes (LEDs) are increasingly used in various industrial fields, equipment that can be mass-produced without degrading quality or performance is required. Organometallic deposition reactors are widely used in the manufacture of such light emitting diodes.

The MOCVD (Metal Organic Chemical Vapor Deposition) reactor supplies a mixed gas of Group 3 alkyl (organic metal raw material gas) and Group 5 source gas into the reaction chamber and thermally decomposes on a heated substrate. It is a device for growing semiconductor crystals.

The organometallic deposition reactor mounts a substrate on a susceptor and injects gas from the top to grow semiconductor crystals on the substrate.

In the organometallic deposition reactor according to the Republic of Korea Patent No. 722592, the nozzle is located in the center of the chamber for gas injection. Due to the flow of gas, the nozzle-type reactor has a gradual decrease in thickness from a narrow gas inlet to an exhaust outlet formed at a wide edge, which causes a reaction of a high concentration of gas close to the inlet first. As a result, there is a double disadvantage that the range is extended to the edge. In other words, as the distance from the gas injection nozzle increases, the growth efficiency decreases. Moreover, a lot of reaction gases are consumed on the exhaust chamber outer wall, and the chamber outer wall, which is a cold wall, adversely affects the process.

Meanwhile, in the organometallic deposition reactor according to US Patent Publication 2006/0021574, a showerhead type organometallic deposition reactor has been developed for even gas injection onto a substrate. The showerhead type organometallic deposition reactor can solve the above problems. However, such a showerhead type reactor is complicated in structure and difficult to process, thereby increasing the product price, and there is a risk of leakage of the cooling water used to prevent thermal expansion, and deposition on the showerhead surface after the process is prevented. It is so severe that the process conditions and the results are severe in each process run. This can make all of the above problems more serious at the time of enlargement.

Accordingly, the problem to be solved by the present invention is to provide an organometallic deposition reactor capable of increasing the size and forming an even film on the substrate.

An organometallic chemical vapor deposition reactor according to an exemplary embodiment of the present invention for achieving this problem includes a reactor body, lead assembly, susceptor, top cover, top cover drive, gas guide member and susceptor. The reactor body includes a bottom wall and a side wall. The lid assembly is engaged with the side wall of the reactor body to cover the top of the reactor body. The susceptor is disposed in the reactor body, supports the substrate to be processed, and an exhaust port is formed at the center thereof. The top cover is disposed below the lead assembly to face the susceptor. The top cover driver moves the top cover up and down. The gas guide member guides gas from the side of the reactor body towards the center of the reactor body. The heating member heats the susceptor.

On the other hand, the gas guide member may be disposed adjacent to the side wall of the reactor body, and may include a cylinder portion disposed adjacent to the side wall and a cover portion extending from the cylinder portion toward the central portion of the reactor body.

In this case, the cylinder portion of the gas guide member includes a plurality of cylinders arranged concentrically, the plurality of cylinders increase in height from the bottom wall of the reactor body in a direction outward from the center, the cover portion is It may include a plurality of covers each extending from the top of the plurality of cylinders, to guide the gas into the space between the plurality of cylinders and the plurality of covers.

On the other hand, the organometallic chemical vapor deposition reactor further comprises a distributor formed of a ring-shaped body, the body is a space between the plurality of grooves and the plurality of grooves formed in a concentric circle so that the lower portion of the plurality of cylinders can be inserted It may include a gas injection hole formed between the grooves formed in a concentric circle so that the gas can be injected into.

On the other hand, the plurality of covers of the cover portion may be at an acute angle with the plurality of cylinders to guide the injected gas to the substrate.

At this time, the magnitude of the acute angle may be formed to decrease toward the outside on the concentric circle.

In addition, the top cover may be formed to reduce the thickness in the lateral direction from the central portion.

In addition, each of the plurality of cylinders may be formed with a refrigerant passage through which the refrigerant flows.

In addition, the organometallic chemical vapor deposition reactor may further include a lifting unit capable of driving at least a portion of the plurality of cylinders up and down.

The organometallic chemical vapor deposition reactor according to another exemplary embodiment of the present invention for achieving this problem includes a reactor body, a lead assembly, a susceptor, a gas guide member, a lifting unit and a heating member. The reactor body includes a bottom wall and a side wall. The lid assembly is engaged with the side wall of the reactor body to cover the top of the reactor body. The susceptor is disposed in the reactor body, supports the substrate to be processed, and an exhaust port is formed at the center thereof. The gas guide member includes a cylinder portion disposed adjacent to the sidewall and including a plurality of cylinders to guide gas from a side of the reactor body toward a central portion of the reactor body and from the plurality of cylinders. Guide the gas towards the susceptor through a space between the plurality of cylinders and the plurality of covers, including a cover including a plurality of covers each extending toward the center. The lifting unit drives at least a portion of the plurality of cylinders up and down. The heating member heats the susceptor.

The distributor may further include a distributor formed of a ring-shaped body, and the distributor may inject gas into a plurality of grooves formed in concentric circles, and a space between the plurality of cylinders so that the lower portions of the plurality of cylinders can be inserted. And a gas injection hole formed between the plurality of grooves formed concentrically.

On the other hand, the plurality of covers of the cover portion may be at an acute angle with the plurality of cylinders to guide the injected gas to the substrate.

In addition, the magnitude of the acute angle can be reduced from the concentric circle toward the outside.

In addition, each of the plurality of cylinders and the plurality of covers of the gas guide member may be integrally formed or separately formed and combined.

In addition, each of the plurality of cylinders may be formed with a refrigerant passage through which the refrigerant flows.

In addition, the organometallic chemical vapor deposition reactor is disposed in the lower portion of the lid assembly to face the susceptor, the top cover is reduced in thickness from the center portion to the lateral direction, and a top cover drive for moving the top cover up and down It may further include.

An organometallic chemical vapor deposition reactor according to an embodiment of the present invention. And a gas guide member for guiding gas from the side of the reactor body toward the central portion of the reactor body. Therefore, uniform film quality can be formed. When the gas flows out from the center part to the side part, the cover area increases as it flows outward, so the density becomes thinner. Furthermore, the process proceeds first in the center part, so that the density of the gas becomes thinner. However, when gas is introduced from the outside of the reactor to the center part, the process proceeds to the outside first, so that the density of the gas is concentrated to the center part instead of lean, so that it is possible to form a uniform film by canceling it out. Moreover, gas discharge is formed centrally in the susceptor. Therefore, as the gases flow toward the susceptor, the film can be formed more easily with a small amount of gas.

The cylinder portion of the gas guide member also includes a plurality of cylinders arranged concentrically, the plurality of cylinders increasing in height from the bottom wall of the reactor body in a direction from the center outwards, The cover part includes a plurality of covers each extending from an upper end of the plurality of cylinders to guide the gas into the space between the plurality of cylinders and the plurality of covers. Therefore, it can be manufactured very easily as compared to the conventional shower head, thereby securing a price competitiveness of the organometallic chemical vapor deposition reactor.

In addition, the top cover is disposed in the lower portion of the lid assembly to face the susceptor, the thickness is reduced in the lateral direction from the center portion can more easily guide the gas injected from the gas guide member in the susceptor direction, In addition, the top cover driving unit may obtain desired process conditions by adjusting the flow rate of the mixed gas by moving the top cover up and down.

In addition, the plurality of covers of the cover part is formed to form an acute angle with the plurality of cylinders or, moreover, when the size of the acute angle is formed to increase from the concentric circle toward the outside, it is easier to guide the gas injected into the substrate Can be.

In addition, each of the plurality of cylinders can prevent the gas guide member from rising to a high temperature when the refrigerant flow path through which the refrigerant flows is formed.

In addition, the elevating unit may obtain a desired process condition by adjusting the flow rate of each gas before mixing by driving at least a portion of the plurality of cylinders up and down.

1 is a schematic cross-sectional view of an organometallic chemical vapor deposition reactor according to an exemplary embodiment of the present invention.
2 is a schematic cross-sectional view of an organometallic chemical vapor deposition reactor according to another exemplary embodiment of the present invention.
3 is a schematic cross-sectional view of an organometallic chemical vapor deposition reactor according to another exemplary embodiment of the present invention.
4 is an enlarged view of a portion A shown in FIGS. 2 and 3.
5 and 6 are schematic cross-sectional views showing before and after the lift pins shown in FIG. 4, respectively.
7 is a view for explaining the effect of the present invention, a plan view of the susceptor shown in FIGS.
8 is a partial cutaway perspective view of the gas guide member illustrated in FIGS. 1 to 3.
9 is a perspective view of the diffuser shown in FIGS. 1 to 3.
10 is a partially cutaway perspective view of the diffuser shown in FIG. 9.
11 is a perspective view of a gas guide member of an organometallic chemical vapor deposition reactor according to another exemplary embodiment of the present invention.
12 is a perspective view of a gas guide member of an organometallic chemical vapor deposition reactor according to another exemplary embodiment of the present invention.
13 is a perspective view of a gas guide member of an organometallic chemical vapor deposition reactor according to another exemplary embodiment of the present invention.
14 is a conceptual diagram for explaining the effect by the susceptor of the organometallic chemical vapor deposition reactor according to the present invention.
FIG. 15 is a conceptual view illustrating the effect of the susceptor of the organometallic chemical vapor deposition reactor according to a comparative example for comparison with FIG. 14.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings, It will be possible. The present invention is not limited to the following embodiments and may be embodied in other forms. The embodiments disclosed herein are provided so that the disclosure may be more complete and that those skilled in the art will be able to convey the spirit and scope of the present invention. In the drawings, the thickness of each device or film (layer) and regions is exaggerated for clarity of the present invention, and each device may have various additional devices not described herein.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings.

1 is a schematic cross-sectional view of an organometallic chemical vapor deposition reactor according to an exemplary embodiment of the present invention.

Referring to FIG. 1, the organometallic chemical vapor deposition reactor 100 according to an exemplary embodiment of the present invention includes a reactor body 110, a lead assembly 120, a susceptor 130, a top cover 160, and a tower. The cover driver 210, the gas guide member 140, and the heating member 150 are included.

The reactor body 110 includes a bottom wall 112 and a side wall 111. For example, the reactor body 110 may be formed in a cylindrical cylinder shape. Accordingly, the bottom wall 112 may be formed in a circular disk shape, and the side wall 111 may be formed in the shape of a side surface of the cylinder. Refrigerant flow paths 112a and 111a for cooling the reactor body 110 may be formed in the bottom wall 112 and the side wall 111, respectively.

The lid assembly 120 is coupled to the side wall 111 of the reactor body 110 to cover the upper portion of the reactor body (110). For example, when the reactor body 110 is formed in a cylindrical cylindrical shape, the lead assembly 120 may be formed in the disk shape of the disc. The lead assembly 120 may include a refrigerant passage 121 for cooling the lead assembly 120.

On the other hand, a groove is formed in the upper side of the side wall 111 of the reactor body 110 and the end of the lid assembly 120, the O-ring 122 is disposed in the groove may seal the reactor body 110. . The lead assembly 120 may include a top cover 160 disposed on the susceptor 130. For example, the top cover 160 may include fused quartz or boron nitride.

In addition, a top guide 190 is disposed at an inner step of the side wall 111 to form a gas flow path GP1 formed between the side wall 111 and the outermost cylinder of the gas guide member 140 to form a gas ( G) may be guided to the substrate S to be disposed on the susceptor 130.

The susceptor 130 is disposed in the reactor body 110 and supports the substrate S to be processed. The susceptor 130 is, for example, in the shape of a disk, and a plurality of substrates S may be disposed along a circumference thereof. In addition, the susceptor 130 has an exhaust port 131 formed at the center thereof.

The susceptor 130 is supported by the susceptor support 132. The susceptor support 132 has a pipe shape and extends from the center of the lower portion of the susceptor 130 to be connected to the exhaust port 131.

Meanwhile, the susceptor support 132 is rotatably coupled by a ferro seal 180. Therefore, the susceptor 130 may be configured to be rotatable along the susceptor rotation direction (R). Therefore, the substrate S to be supported by the susceptor 130 is configured to revolve at a constant speed along the susceptor rotation direction R. FIG.

In addition, although not shown, the susceptor 130 may have a substrate rotating device (not shown) to rotate the target substrate S to rotate at a constant speed along the substrate rotation direction SR. As described above, by rotating and revolving the substrate S to be processed, a more uniform film quality can be formed on the substrate S above.

The gas guide member 140 guides the gas G from the side of the reactor body 110 toward the center of the reactor body 110. The gas G thus guided is also discharged through the exhaust port 131 formed at the center of the susceptor 130. As described above, when gas is injected from the side of the reactor body 110 and gas G is discharged through the center portion of the susceptor 130, a small amount of gas is used to access the substrate S to be processed. Uniform film quality can be formed. Hereinafter, with reference to FIG. 7, FIG. 14, and FIG. 15, it demonstrates in detail.

7 is a view for explaining the effect of the present invention, a plan view of the susceptor shown in FIGS. 14 is a conceptual diagram for explaining the effect by the susceptor of the organometallic chemical vapor deposition reactor according to the present invention, Figure 15 is an effect by the susceptor of the organometallic chemical vapor deposition reactor according to a comparative example for comparison with FIG. It is a conceptual diagram for illustration.

First, referring to FIG. 7, the gas G is injected in the edge direction of the susceptor 130 and flows to the center portion of the susceptor 130. On the other hand, the gas G is first contacted with the first membrane process. Therefore, as the process proceeds, the density of the gas G becomes lean, but the area covered in the edge direction is narrow, so that the density of the gas G lean according to the process can be offset. Therefore, uniform thin film formation is possible.

14 and 15, in the organometallic chemical vapor deposition reactor (FIG. 14) according to an exemplary embodiment of the present invention, an exhaust port formed at the center of the susceptor 130 at an external pump (not shown) ( Suction proceeds through 131 to allow gas G to flow toward susceptor 130. Therefore, it is possible to form a thin film on the substrate S to be processed using a relatively small amount of gas.

On the contrary, in the organometallic chemical vapor deposition reactor (FIG. 15) according to the comparative example, the suction proceeds through the exhaust port 131 formed in the opposite direction to the susceptor 130 by an external pump (not shown). Flows toward the opposite direction of the susceptor 130. Therefore, in order to form a thin film in the to-be-processed substrate S, a relatively large amount of gas is needed.

Referring back to FIG. 1, the heating member 150 heats the susceptor 130. For example, the heating member 150 may be disposed under the susceptor 130 to heat the susceptor 130. For example, the heating member 150 may be formed of an RF coil.

The top cover 160 is disposed below the lead assembly 120 to face the susceptor 130. Although a flat top cover may be used, the present embodiment employs, for example, a top cover 160 whose thickness decreases from the central portion to the lateral direction. As such, the top cover 160 having a reduced thickness in the lateral direction from the center portion may direct the gas to the target substrate S disposed in the susceptor 130, thereby improving utilization efficiency of the gas.

In addition, the top cover driver 210 moves the top cover 160 up and down. To this end, the top cover driver 210 may further include, for example, a drive shaft 211 coupled with the top cover 160 and a motor 212 for moving the drive shaft 211 up and down. The top cover driving unit 210 may obtain a desired process condition by controlling the flow rate of the mixed gas injected from the gas guide member 140 by moving the top cover 160 up and down.

2 is a schematic cross-sectional view of an organometallic chemical vapor deposition reactor according to another exemplary embodiment of the present invention. 4 is an enlarged view of a portion A shown in FIGS. 2 and 3. In the organometallic chemical vapor deposition reactor 100 according to another exemplary embodiment of the present invention, the top cover 160 and the top cover driving unit 210 are removed from the organometallic chemical vapor deposition reactor 100 shown in FIG. It is substantially the same except that unit 220 is added. Therefore, redundant description is omitted.

2 and 4, the organometallic chemical vapor deposition reactor 100 according to the present embodiment includes a reactor body 110, a lead assembly 120, a susceptor 130, a gas guide member 140, and a lifting unit ( 220) and a heating member 150.

The lifting unit 220 includes a lift pin 221 and a lift pin driver 230 for driving the lift pin 221 upwards.The lift pin 221 is the bottom of the reactor body 110. It penetrates through the wall 112 and the distributor 170 to contact the cylinder portion 141 of the gas guide member 140.

5 and 6 are schematic cross-sectional views showing before and after the lift pins shown in FIG. 4, respectively.

2, 5, and 6, the lift pin driver 230 operates to lift the lift pin 221 in FIG. 5 as shown in FIG. 6, thereby at least a part of the cylinder portion 141. Push up the cylinder. For example, as shown in FIG. 6, when the first lift pin 221a and the second lift pin 221b are raised, the outlet of the first gas channel GP1 is narrowed, and the second gas channel GP2 is changed. And the outlet of the third gas passage GP3 is widened.

In contrast, when only the third lift pin 221c is raised, only the outlet of the third gas passage GP3 is narrowed. Alternatively, when only the second lift pin 221b is raised, the second gas passage GP2 is narrowed and the third gas passage GP3 is widened.

As such, the elevating unit 220 controls the cylinders of the cylinder portion 141 individually, thereby adjusting the flow rates of the respective gases before mixing the gas flow paths GP1, GP2, and GP3 to obtain desired process conditions. Can be.

On the other hand, the sealing member 222 may be disposed in order to prevent the gas between the respective gas flow path (GP1, GP2, GP3) is mixed with each other. The sealing member 222 is disposed between the distributor 170 and the cylinder portion 141. In order to block the gas passages GP1, GP2, and GP3 between the distributor 170 and the cylinder portion 141 which move relatively to each other, the sealing member 222 may be formed in a donut shape having a circular cross section. . Since the cross section is circular in this way, the cylinder portion 141 can be easily raised or lowered.

3 is a schematic cross-sectional view of an organometallic chemical vapor deposition reactor according to another exemplary embodiment of the present invention. The organometallic chemical vapor deposition reactor 100 according to another exemplary embodiment of the present invention is a top cover of the organometallic chemical vapor deposition reactor 100 shown in FIG. 1 to the organometallic chemical vapor deposition reactor 100 shown in FIG. 160 and the top cover driver 210 has been added. Therefore, redundant description is omitted.

Referring to FIG. 3, the organometallic chemical vapor deposition reactor 100 according to another exemplary embodiment of the present invention includes a reactor body 110, a lead assembly 120, a susceptor 130, a top cover 160, The top cover driver 210, the gas guide member 140, the lifting unit 220, and the heating member 150 are included.

According to the embodiment of the present invention, the elevating unit 220 may individually control the cylinder of the cylinder portion 141, thereby adjusting the flow rate of each gas before being mixed in each gas flow path (GP1, GP2, GP3) In addition, the top cover driving unit 210 may adjust the flow rate of the mixed gas injected from the gas guide member 140 by moving the top cover 160 up and down, thereby achieving the desired process conditions more easily. can do.

8 is a partial cutaway perspective view of the gas guide member illustrated in FIGS. 1 to 3.

1 to 3 and 8, the gas guide member 140 is disposed adjacent to the side wall 111 of the reactor body 110, and the cylinder part disposed adjacent to the side wall 111 ( 141 and a cover portion 142 extending from the cylinder portion 141 toward the center portion of the reactor body 110. A plurality of cylinders constituting the cylinder portion 141 and a plurality of covers constituting the cover portion 142 may be formed integrally with each other.

In this case, the cylinder portion 141 of the gas guide member 140 includes a plurality of cylinders arranged in concentric circles, the plurality of cylinders are the bottom wall 112 of the reactor body 110 in a direction outward from the center Height from the top, and the cover portion 142 of the guide member 140 includes a plurality of covers each extending from the top of the plurality of cylinders, so that the space between the plurality of cylinders and the plurality of covers To guide the gas.

For example, the gas guide member 140 includes three cylinders arranged concentrically with each other. In addition, the height of the cylinder is smaller as it is located inside. Thus, the three covers extending in the central direction at the ends of the three cylinders can be spaced apart from each other. Through this structure, three gas flow paths GP may be formed.

That is, a first gas flow path GP1 is formed between the side wall 111 of the reactor body 110 and the outermost cylinder, and a second gas flow path GP2 is formed between the outermost cylinder and the center cylinder. The third gas flow path GP3 is formed between the middle cylinder and the innermost cylinder. The gas required for the process may be injected through the gas flow path G thus formed. On the other hand, the bottom wall 112 of the reactor body 110 is formed with a gas inlet 1120 including a first gas inlet 1121, a second gas inlet 1122, and a third gas inlet 1123. The first gas injection port 1121 is connected to the first gas flow path GP1, the second gas injection port 1122 is connected to the second gas flow path GP2, and the third gas injection port 1123 is It is connected to the third gas flow path GP3.

For example, a carrier gas such as hydrogen may be injected through the first gas flow path GP1, and a group 3 alkyl (organic metal raw material gas) gas may be injected through the second gas flow path GP2. The Group 5 source gas may be injected through the third gas flow path GP2. The injected gases are supplied into the reactor body 110 of the organometallic chemical vapor deposition reactor 100 and thermally decomposed on the substrate S heated by the heating member 150 to grow semiconductor crystals.

The gas guide member 140 may form a groove (not shown) on the bottom surface of the reactor body 110 and may be inserted into and fixed to the groove (not shown), but as shown in FIG. 1, a distributor ( 170) may be secured to the dispenser.

On the other hand, the gas guide member 140 may be formed of fused quartz.

9 is a perspective view of the dispenser shown in FIGS. 1 to 3, and FIG. 10 is a partially cutaway perspective view of the dispenser shown in FIG. 9.

1 to 3, 9, and 10, the organometallic chemical vapor deposition reactor 100 according to an exemplary embodiment of the present invention may further include a distributor 170. The distributor 170 is formed of a ring-shaped body. A plurality of grooves 171 are formed concentrically in the distributor 170 so that the lower portion of the cylinder 141 of the gas guide member 140 can be inserted. In addition, a gas injection hole 172 is formed in the distributor 170. The gas injection hole 172 may be formed between the grooves 171 formed in concentric circles, and the gas injected through the gas injection hole 172 may flow into the gas flow path GP1.

11 is a perspective view of a gas guide member of an organometallic chemical vapor deposition reactor according to another exemplary embodiment of the present invention. The organometallic chemical vapor deposition reactor illustrated in FIG. 11 is substantially the same except for the organometallic chemical vapor deposition reactor 100 and the gas guide member illustrated in FIGS. 1 to 3. Therefore, redundant description is omitted.

Referring to FIG. 11, the gas guide member 140 according to the present exemplary embodiment includes a cylinder part 141 and a cover part 142. Although only one cylinder and one cover are illustrated in FIG. 11, a plurality of cylinders may be formed as shown in FIGS. 1 to 3.

A plurality of cylinders constituting the cylinder portion 141 and a plurality of covers constituting the cover portion 142 may be formed separately and combined. In this case, it can manufacture more easily than the case of the integrated type in the previous Example.

12 is a perspective view of a gas guide member of an organometallic chemical vapor deposition reactor according to another exemplary embodiment of the present invention. The organometallic chemical vapor deposition reactor shown in FIG. 12 is substantially the same except for the gas guide member and the organometallic chemical vapor deposition reactor 100 shown in FIGS. 1 to 3. Therefore, redundant description is omitted.

Referring to FIG. 12, the gas guide member 140 according to the present embodiment includes a cylinder portion 141 and a cover portion 142. The cylinder part 141 and the cover part 142 may be integrally formed, or may be separately formed and combined as in the previous embodiment.

Each of the plurality of cylinders constituting the cylinder portion 141 and the plurality of covers constituting the cover portion 142 may be coupled to form an acute angle θ ₁ , θ ₂ , θ ₃ . As described above, when the plurality of covers constituting the cover part 142 are combined to form an acute angle θ ₁ , θ ₂ , θ ₃ , the direction of gas injection is controlled by the substrate S of the susceptor 130. ), A thin film can be formed using a relatively small amount of gas.

Meanwhile, the acute angles θ ₁ , θ ₂ , θ ₃ may be identical to each other. Alternatively, the magnitudes of the acute angles θ ₁ , θ ₂ , θ ₃ may decrease from the concentric circles toward the outside. That is, most of the internal acute angle (θ ₁₎ is greater than the acute angle (θ ₂₎ in the center, is greater than the acute angle (θ ₂₎ is the outermost acute angle (θ ₃₎ of the middle. As described above, when the gas guide member 140 is formed such that the magnitudes of the acute angles θ ₁ , θ ₂ , θ ₃ decrease from the concentric circles toward the outside, the thickness of the injection hole of the gas guide member 140 decreases. This allows the gas to be ejected more strongly.

13 is a perspective view of a gas guide member of an organometallic chemical vapor deposition reactor according to another exemplary embodiment of the present invention. The organometallic chemical vapor deposition reactor illustrated in FIG. 13 is substantially the same except for the gas guide member and the organometallic chemical vapor deposition reactor 100 illustrated in FIGS. 1 to 3. Therefore, redundant description is omitted.

Referring to FIG. 13, the gas guide member 140 according to the present exemplary embodiment includes a cylinder part 141 and a cover part 142. The cylinder part 141 and the cover part 142 may be integrally formed, or may be separately formed and combined as in the previous embodiment. In addition, each of the plurality of cylinders constituting the cylinder portion 141 and the plurality of covers constituting the cover portion 142 may be combined to form an acute angle as in the previous embodiment, and the magnitude of the acute angle may be It may be formed to decrease toward the outside on the concentric circles.

In the cylinder 141 of the gas guide member 140 according to the present exemplary embodiment, a refrigerant passage 141a through which a refrigerant flows may be formed. Thus, by forming the coolant flow path 141a in the gas guide member 140, the gas guide member 140 can be prevented from being raised to an excessively high temperature.

According to the present invention, the thin film forming process can be performed in large quantities without deterioration in quality or performance.

While the present invention has been described in connection with what is presently considered to be practical and exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

100: organometallic chemical vapor deposition reactor 110: reactor body
111: side wall 111a: refrigerant flow path
112: bottom wall 1120: gas inlet
1121: first gas inlet 1122: second gas inlet
1123: second gas inlet 112a; Refrigerant flow path
120: lead assembly 121: refrigerant flow path
122: O-ring 130: susceptor
131: exhaust port 132: susceptor support
140: gas guide member 141: cylinder portion
142: cover portion 150: heating member
160: top cover 170: distributor
171 groove 172 gas injection hole
180: ferro seal 190: top guide
210: top cover drive unit 211: drive shaft
212: motor 220: lifting unit
221: lift pin 222: sealing member
230: lift pin drive unit
S: substrate to be processed G: gas
GP: gas flow path GP1: first gas flow path
GP2: 2nd gas flow path GP3: 3rd gas flow path
R: susceptor rotation direction SR: substrate rotation direction

Claims (15)

A reactor body comprising a bottom wall and a side wall;
A lid assembly coupled to a side wall of the reactor body to cover an upper portion of the reactor body;
A susceptor disposed in the reactor body, supporting a substrate to be processed, and having an exhaust port formed at a central portion thereof;
A top cover disposed below the lid assembly to face the susceptor;
A top cover driver for moving the top cover up and down;
A gas guide member for guiding gas from a side of the reactor body toward a central portion of the reactor body; And
An organometallic chemical vapor deposition reactor comprising a heating member for heating the susceptor. The method of claim 1,
The gas guide member,
An organometallic chemical vapor deposition reactor disposed adjacent to the side wall of the reactor body and including a cylinder portion disposed adjacent to the side wall and a cover portion extending from the cylinder portion toward the center portion of the reactor body. The method of claim 2,
The cylinder portion of the gas guide member,
A plurality of cylinders arranged concentrically, said plurality of cylinders increasing in height from said bottom wall of said reactor body in a direction outward from a center,
The cover unit includes a plurality of covers each extending from the top of the plurality of cylinders,
Organometallic chemical vapor deposition reactor, characterized in that for guiding the gas into the space between the plurality of cylinders and the plurality of covers. The method of claim 3,
Further comprising a distributor formed of a ring-shaped body,
The distributor,
A plurality of grooves formed concentrically so that lower portions of the plurality of cylinders can be inserted; And
Organometallic chemical vapor deposition reactor comprising a gas injection hole formed between the plurality of grooves formed in a concentric circle to inject gas into the space between the plurality of cylinders. The method of claim 3,
The plurality of covers of the cover portion is an acute angle with the plurality of cylinders, the organometallic chemical vapor deposition reactor, characterized in that for injecting gas to the substrate. 6. The method of claim 5,
The magnitude of the acute angle, the organometallic chemical vapor deposition reactor, characterized in that to decrease toward the outside on a concentric circle. The method of claim 3,
The top cover is an organometallic chemical vapor deposition reactor, characterized in that the thickness is reduced from the central portion to the side. The method of claim 3,
Each of the plurality of cylinders is an organometallic chemical vapor deposition reactor, characterized in that the refrigerant flow path through which the refrigerant flows is formed. The method of claim 3,
Organometallic chemical vapor deposition reactor further comprises a lifting unit capable of driving at least a portion of the plurality of cylinders up and down. A reactor body comprising a bottom wall and a side wall;
A lid assembly coupled to a side wall of the reactor body to cover an upper portion of the reactor body;
A susceptor disposed in the reactor body, supporting a substrate to be processed, and having an exhaust port formed at a central portion thereof;
A cylinder portion disposed adjacent to the side wall and extending from the plurality of cylinders toward the center portion of the reactor body, respectively, adjacent to the side wall, to guide gas from the side of the reactor body toward the central portion of the reactor body; A gas guide member for guiding the gas toward the susceptor through a space between the plurality of cylinders and the plurality of covers, including a cover including a plurality of covers; And
A lifting unit capable of driving at least a portion of the plurality of cylinders up and down; And
An organometallic chemical vapor deposition reactor comprising a heating member for heating the susceptor. The method of claim 10,
Further comprising a distributor formed of a ring-shaped body,
The distributor,
A plurality of grooves formed concentrically so that lower portions of the plurality of cylinders can be inserted; And
An organometallic chemical vapor deposition reactor, characterized in that it comprises a gas injection hole formed between the grooves formed in a concentric circle to inject gas into the space between the plurality of cylinders. The method of claim 10,
The plurality of covers of the cover portion is an acute angle with the plurality of cylinders, the organometallic chemical vapor deposition reactor, characterized in that for injecting gas to the substrate. The method of claim 12,
The magnitude of the acute angle, the organometallic chemical vapor deposition reactor, characterized in that to decrease toward the outside on a concentric circle. The method of claim 10,
Each of the plurality of cylinders is an organometallic chemical vapor deposition reactor, characterized in that the refrigerant flow path through which the refrigerant flows is formed. The method of claim 10,
A top cover disposed below the lid assembly so as to face the susceptor and having a reduced thickness in a lateral direction from a center portion thereof; And
Organometallic chemical vapor deposition reactor further comprises a top cover driving unit for moving the top cover up and down.

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