KR101128738B1 - Apparatus for vapor deposition - Google Patents

Abstract

The deposition apparatus according to the present invention is rotatably supported by a chamber, a susceptor in which at least one installation groove is formed and a fluid supply is provided, a protruding support shaft protruding from an installation groove of the susceptor, and a protruding support shaft. A wafer is mounted on the satellite susceptor and the bottom surface of the satellite susceptor, characterized in that it comprises a blade (blade) is rotated by the fluid supplied to the installation groove to rotate the satellite susceptor. As a result, the rotational speed may be changed at a constant or different speed according to the placement interval of the wafer by adjusting the flow rate to be supplied, thereby securing a uniformity of temperature and gas flow, thereby obtaining a deposition apparatus having improved deposition uniformity. It works.

Description

Deposition Apparatus {Apparatus for vapor deposition}

The present invention relates to a deposition apparatus, and more particularly, by adjusting the flow rate to be supplied can vary the rotational speed at a constant or different speed depending on the placement section of the wafer, thereby ensuring uniformity of temperature and gas flow Thus, there is an effect of obtaining a deposition apparatus in which deposition uniformity is improved.

A vapor deposition apparatus is used for depositing a thin film on the surface of a semiconductor wafer. The process gas is blown into the chamber through a gas injector to deposit a desired thin film on the wafer placed on the susceptor.

In the deposition of thin films, the deposition thickness deposited on the wafer surface greatly affects the quality of the thin film. To this end, the deposition temperature is maintained and the uniform supply of process gas for deposition is controlled. In particular, in the case of an organometallic chemical vapor apparatus (MOCVD), a deposition thickness is required to obtain a high efficiency light emitting device.

The susceptor on which the wafer is placed is rotated so that the deposition is made uniform over the entire area of the wafer. This is for the process gas supplied to the surface of the wafer to be uniformly spread on the surface of the wafer so that the reaction occurs and the deposition thickness is uniform.

However, the conventional susceptor rotates in a state where a large number of wafers are placed, which causes a problem in that deposition on each wafer is not uniform.

An object of the present invention is to adjust the flow rate to be supplied to vary the rotational speed to a constant or different speed depending on the arrangement interval of the wafer, through which the uniformity of the temperature and gas flow is secured to improve the deposition uniformity To provide.

Deposition apparatus according to the invention is installed by the chamber, the susceptor is formed in the chamber and at least one installation groove is supplied with a fluid, the projection support shaft protruding from the installation groove of the susceptor, the rotation by the projection support shaft It may include a satellite susceptor that is supported so that the wafer is seated and a blade provided on the bottom surface of the satellite susceptor and rotated by a fluid supplied to the installation groove to rotate the satellite susceptor.

The chamber includes a gas injection unit in the form of a showerhead or a nozzle for supplying a process gas to the wafer side.

The chamber includes a heater that is partitioned into at least one or more to control the temperature of the wafer of the satellite susceptor, the temperature control of the individual, the chamber includes a drive for rotating the susceptor.

The chamber includes a measurement unit, such as a pyrometer, for measuring the temperature of the wafer or the deposited deposition thickness.

A lower portion of the susceptor includes a lift unit for lifting the projecting support shaft for supporting the satellite susceptor, the lift unit at least one lift shaft in contact with the bottom surface of the projecting support shaft, the lift shaft for lifting the lift shaft Contains a motor.

An outlet side of the fluid supplied to the installation groove includes a flow rate adjusting unit for adjusting the flow rate of the fluid supplied to the satellite susceptor.
And, preferably, the satellite susceptor deposition apparatus characterized in that the rotational speed is variable according to the flow rate of the fluid supplied to the installation groove.

According to the deposition apparatus according to the present invention, the rotational speed may be changed at a constant or different speed according to the arrangement interval of the wafer by adjusting the flow rate supplied, through which the uniformity of temperature and gas flow is secured to ensure uniformity of deposition. There is an effect of obtaining an improved deposition apparatus.

Hereinafter, the deposition apparatus according to the present embodiment will be described.

1 is a cross-sectional view of a deposition apparatus according to an embodiment of the present invention.

As illustrated in FIG. 1, the deposition apparatus 10 includes a chamber 100 in which a wafer W (W ′) is positioned inside and a deposition process is performed. As described in the present embodiment, the chamber 100 may be divided into two top and bottom shapes, or a gate valve may be formed to allow the wafer to flow in and out of one chamber.

The chamber 100 is positioned at an upper side, and includes an upper chamber 102 (also referred to as Lid) in which a gas injection unit 150 to which process gas is supplied is installed, and a lower chamber coupled to the upper chamber 102 to form a process space. (104, also referred to as a reactor).

The gas injector 150 is positioned above the susceptor 110 to inject the process gas toward the susceptor 110 and is formed in the form of a shower head or a nozzle.

The lower chamber 104 is provided with a susceptor 110, and the susceptor 110 is provided with a satellite susceptor 170 (satellite) on which the wafer W (W ′) is seated and rotated. Satellite susceptor 170 is rotated by the fluid.

The susceptor 110 may be used in a non-rotating form or in a rotating form. When used in a rotating form, the lower chamber 104 is provided with a driving unit 140 for rotating the susceptor 110.

The driving unit 140 includes a driving motor 142 and a driving shaft 144, and a support shaft for guiding the rotation of the driving shaft 144 around the driving shaft 144 and supporting the rotating susceptor 110. 146. The driving unit 140 may be installed in a form such that rotation is possible by rotation of the belt or coupling of gears.

In addition, the driving unit 140 may be used in the form of rotating by the fluid, such as to rotate the satellite susceptor 170. In this case, it is possible to have a separate support plate having a groove formed to support the susceptor 110, and to supply the fluid to the center portion to allow the susceptor 110 to rise and rotate on the support plate. In the groove of the support plate where the susceptor 110 is located, an inlet and outlet of a fluid in which the fluid supplied to the center portion is supplied to and discharged from the side of the susceptor 110 is formed, and a blade is formed on the bottom of the susceptor 110. ) May be formed, and a support shaft for supporting the rotation of the susceptor 110 may be provided.

Fluid moves inside the drive shaft 144 supporting the susceptor 110. The fluid is connected to the central portion of the drive shaft 144 and supplied, and a flow control valve such as a mass flow controller (MFC) for controlling the flow rate between the tank 179 in which the fluid is stored and the supply side fluid flow path 110c is provided. 175 is installed. The amount of fluid supplied to the satellite susceptor 170 through the flow control valve 175 is adjusted to be the same rotation or different rotation speeds depending on the section in which the wafers W 'are disposed. If the susceptor 110 is rotated, it is also used to adjust the flow rate for rotating the susceptor 110.

In addition, the lower chamber 104 is provided with heaters 120a to 120d for heating the wafers W and W 'positioned in the satellite susceptor 170. The heaters 120a, 120b, 120c, and 120d are installed in four separate forms to heat the wafers W (W ′) located in the satellite susceptor 170 to uniformly or partially different temperatures throughout. Thus, individual temperature control is possible. The heaters 120a, 120b, 120c, and 120d installed in four separate forms may be provided with the rotational speed of the satellite susceptor 170 or the supply amount of process gas depending on the deposition progress in the satellite susceptor 170. The temperature control of each section can be performed in conjunction with each other, or the temperature control of each section can be performed separately without interlocking with the satellite susceptor 170.

The heaters 120a, 120b, 120c, and 120d may be manufactured in four separate forms as described above, or may be manufactured and used in one spiral form to enable uniform control.

In addition, the upper chamber 102 is provided with a measuring unit 130 for measuring the temperature, the deposition thickness or the degree of deformation of the wafer W (W ′) located on the susceptor 110. The measuring unit 130 uses a form such as a pyrometer.

The gas injection unit 150, the heaters 120a, 120b, 120c, 120d, the driving unit 140, and the exhaust pump 177 installed in the chambers 112 and 114 are connected to a controller (not shown). To be controlled.

The lower part of the susceptor 110 is provided with a lifting unit 160 for lifting the satellite susceptor 170 on which the wafer W (W ') is placed. The lifting unit 160 may be located inside the lower chamber 104 or may be provided outside the lower chamber 104. The lifting unit 160 is used to raise the satellite susceptor 170 in order to carry the wafer W (W ') outward.

The measurement unit 130 measures the temperature, the deposition thickness, or the degree of deformation of the wafer W (W ′) located in the satellite susceptor 170 and transmits the measured value to the control unit, through which the heaters 120a, 120b, and 120c are located. The temperature of 120) and the rotation speed of the satellite susceptor 170 are controlled. Accordingly, the uniformity of the deposition is maintained by monitoring the state of the deposition on the wafer W (W ') in real time. Description 196 is an O-ring for confidentiality.

As illustrated in FIGS. 2 and 3, one or more satellite susceptors 170 are disposed on the susceptor 110. Rotating the satellite susceptor 170 is to ensure the deposition uniformity of the wafer (W) (W ') that is deposited on the satellite susceptor 170 is carried out.

An installation groove 110a is formed in the susceptor 110 so that the satellite susceptor 170 is located, and a protruding support shaft 116 protruding from the installation groove 110a is formed. The protruding support shaft 116 maintains the state where the satellite susceptor 170 is supported, and a locking jaw 116a is formed so as not to escape to the lower side of the susceptor 110. The upper side supports the satellite susceptor 170 based on the locking step 116a, and the lower side is positioned in a state of passing through the susceptor 110.

In addition, the fluid flow paths 110c and 110c 'are provided in the installation groove 110a to supply and discharge fluid, and the fluid is supplied (IN) and discharged (OUT).

The satellite susceptor 170 on which the wafer W (W ′) is mounted is mounted on the installation groove 110a to rotate by the fluid supplied to the installation groove 110a. A coupling groove 170a is formed in the bottom of the satellite susceptor 170 so that the protruding support shaft 116 is inserted therein. Protruding support shaft 116 is to reduce the friction by maintaining a gap so that the bottom surface of the satellite susceptor 170 that rotates on the installation groove (110a) does not contact the surface of the installation groove (110a). The satellite susceptor 170 is kept spaced upward from the installation groove 110a by the projecting support shaft 116, so that the satellite susceptor 170 rotates smoothly in a state where the resistance to friction is reduced. This becomes possible. A plurality of blades 184 are provided on the bottom surface of the satellite susceptor 170 so that the satellite susceptor 170 rotates by the fluid supplied to the installation groove 110a. Accordingly, the satellite susceptor 170 rotates independently on the susceptor 110.

The susceptor 110 is supplied (IN) through a fluid flow path 110c through which a gas or the like for rotating the blade 184 installed in the installation groove 110a into the fluid is supplied (IN), and the gas from which the blade 184 is rotated. The back is discharged through the fluid flow path 110c 'formed on the opposite side.

When the gas supplied through the fluid passages 110c and 110c 'is applied to the blade 184, the satellite susceptor 170 with the blade 184 is rotated.

The rotation of the satellite susceptor 170 may be controlled by the flow rate supplied through the fluid passage 110c. In this case, the flow rate supplied is adjusted by measuring through a gauge (not shown).

The satellite susceptor 170 compares and monitors, in real time, deformations such as the temperature of the wafer W (W ′), the deposited thickness, or the warp through a measurement unit 130 such as a pyrometer 130. While controlling the rotation speed.

4A, 4B, and 5 are plan views illustrating blades 184 and installation grooves 110a formed on the bottom surface of the satellite susceptor 170.

The blade 184 formed on the bottom surface of the satellite susceptor 170 is installed in the circumferential direction of the bottom surface of the satellite susceptor 170 and is formed to a portion of the coupling groove 170a corresponding to the center portion. You can do that.

As shown in FIG. 4B, the blade 184 may be formed to have a predetermined length, and then the adjacent blades 184 may be connected to each other so that fluid may be applied to the connected portion.

5 shows the flow of the fluid supplied to the installation groove 110a. The fluid supplied through the supply-side fluid flow path 110c (IN) pressurizes the blade 184 and changes the circumferential direction of the installation groove 110a. After moving along, it is discharged to the outside through the discharge side fluid passage (110c ') formed on the other side of the installation groove (110a).

6 to 9 illustrate an elevation unit 160 for elevating the satellite susceptor 170 under the susceptor 110.

As shown in FIG. 6D, the elevating unit 160 includes at least one elevating shaft 162 contacting the bottom of the protruding support shaft 116, and an elevating motor 164 for elevating the elevating shaft 162. ). The lifting shaft 162 is formed to be equal to the number of satellite susceptors 170 provided in the susceptor 110. When there are a plurality of satellite susceptors 170, the lifting shaft 162 is also the same number, and they are connected to the lifting plate 166 to lift at the same time. The lifting plate 166 is formed with a hole 166a in the center portion to move up and down around the drive shaft 144.

Although not shown, the lifting unit may be configured to be provided outside the lower chamber 104 in a different form from the present embodiment. In this case, the lifting shaft 162 and the lifting motor 164 will be located at the lower portion of the lower chamber 114, the outer periphery of the lifting shaft 162 will be provided with a bellows (bellows) for airtight.

As shown in FIG. 7, the lifting shaft 162 is positioned to be spaced apart from the lower portion of the protruding support shaft 116. The position in this state is to prevent the susceptor 110 from being affected by the rotation of the susceptor 110 while the susceptor 110 rotates. If the process is performed in such a way that the susceptor 110 does not rotate, the protruding support shaft 116 and the lifting shaft 162 may be connected to one.

When the process by the rotation of the susceptor 110 is completed, as shown in FIG. 8, the lifting motor 164 operates to raise and lower the lifting shaft 162 to raise the protruding support shaft 116 so that the satellite susceptor ( 170 is raised to be located above the installation groove (110a).

In this state, as shown in FIG. 9, the carrier arm 197 of the carrier robot 199 for carrying out the satellite susceptor 170 or the wafer W (W ′) is the satellite susceptor 170. It is located on the bottom of. The lifting motor 164 is operated while the carrier arm 197 is located at the bottom of the satellite susceptor 170 so that the lifting shaft 162 and the protruding support shaft 116 are lowered, and the satellite susceptor 170 is conveyed. It is mounted on the arm 197 and taken out to the outside.

The protruding support shaft 116 descending in conjunction with the lowering of the lifting shaft 162 is caught by the locking jaw 116a and positioned in the installation groove 110a.

On the other hand, if you do not want to export the entire satellite susceptor 170 to the outside as described above, to carry out only the wafer (W) (W ') located in the satellite susceptor 170, the satellite susceptor 170 to the carrier robot ( A groove GROOVE may be formed so that the carrier arm 197 of 199 may be inserted.

10 and 11 illustrate a gas injection unit 150 provided in the chamber 100 to supply a process gas.

As shown in FIG. 10, the gas injection unit 150 may use a showerhead 152. In the case of using the shower head 152 form the airtight state is formed in a laminated form (A) (B) (C) and then supply a process gas for deposition to a certain space (A) (B), and The space C is cooled by supplying a cooling material.

As shown in FIG. 11, the gas injection unit 150 may use a nozzle 154 form. In this case, the process gas is supplied from the center portion to the surface of the wafer W (W '), and deposition is performed. The process gas after the deposition is completed is discharged through the discharge unit 156 installed on the side of the susceptor 110.

As mentioned above, although the present invention has been described with reference to the illustrated embodiments, it is only an example, and it will be understood by those skilled in the art that various modifications and equivalent other embodiments are possible. Therefore, the scope of the present invention should be defined by the appended claims and their equivalents.

1 is a cross-sectional view of a deposition apparatus according to an embodiment of the present invention.

2 is a perspective view of a susceptor provided in the deposition apparatus according to the embodiment of the present invention.

3 is an exploded perspective view of the satellite susceptor provided in the deposition apparatus according to the embodiment of the present invention.

4A and 4B are plan views illustrating bottom surfaces of a satellite susceptor provided in a deposition apparatus according to an embodiment of the present invention.

5 is a flow chart showing the flow of fluid supplied to rotate the satellite susceptor provided in the deposition apparatus according to an embodiment of the present invention.

6 is a perspective view of a lifting unit provided in the deposition apparatus according to the embodiment of the present invention.

7 is a cross-sectional view of the lifting unit is installed in the deposition apparatus according to the embodiment of the present invention.

8 and 9 are state diagrams showing the state in which the satellite susceptor is lifted by the lifting unit of the deposition apparatus according to the embodiment of the present invention.

10 and 11 are cross-sectional views of a gas injection unit provided in the deposition apparatus according to the embodiment of the present invention.

Claims (12)

chamber; A susceptor installed inside the chamber, the susceptor having at least one installation groove through which fluid is supplied; A protruding support shaft protruding from the installation groove of the susceptor; A satellite susceptor supported by the protruding support shaft to be rotatable and having a wafer seated thereon; And a blade provided on the bottom surface of the satellite susceptor and rotating by the fluid supplied to the installation groove to rotate the satellite susceptor. The deposition apparatus of claim 1, wherein the chamber includes a gas injector for supplying a process gas to the wafer. The deposition apparatus of claim 2, wherein the gas injection unit is in the form of a shower head. The deposition apparatus of claim 2, wherein the gas injector is in the form of a nozzle. The deposition apparatus of claim 1, wherein the chamber comprises a heater that is partitioned into at least one or more of the satellite susceptors to heat the wafer. The deposition apparatus of claim 1, wherein the chamber includes a driving unit for rotating the susceptor. The deposition apparatus of claim 1, wherein the chamber includes a measuring unit for measuring any one or more of a temperature, a deposited deposition thickness, and a degree of deformation of the wafer. 8. The deposition apparatus of claim 7, wherein the measurement unit is a pyrometer. The deposition apparatus of claim 1, further comprising a lifter configured to lift the protruding support shaft supporting the satellite susceptor below the susceptor. The deposition apparatus of claim 9, wherein the lifting unit comprises at least one lifting shaft that is in contact with a bottom surface of the protruding support shaft, and a lifting motor for lifting the lifting shaft. The deposition apparatus of claim 1, wherein a flow rate adjusting unit is provided at an outlet side of the fluid supplied to the installation groove to adjust a flow rate of the fluid supplied to the satellite susceptor. The deposition apparatus of claim 1, wherein the satellite susceptor has a rotation speed that varies according to a flow rate of the fluid supplied to the installation groove.

Images