KR20130007149A - Apparatus for treating substrate - Google Patents

Apparatus for treating substrate Download PDF

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Publication number
KR20130007149A
KR20130007149A KR1020110063995A KR20110063995A KR20130007149A KR 20130007149 A KR20130007149 A KR 20130007149A KR 1020110063995 A KR1020110063995 A KR 1020110063995A KR 20110063995 A KR20110063995 A KR 20110063995A KR 20130007149 A KR20130007149 A KR 20130007149A
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KR
South Korea
Prior art keywords
substrate
blocking plate
unit
heater
susceptor
Prior art date
Application number
KR1020110063995A
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Korean (ko)
Inventor
송준호
이상곤
Original Assignee
세메스 주식회사
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Publication date
Application filed by 세메스 주식회사 filed Critical 세메스 주식회사
Priority to KR1020110063995A priority Critical patent/KR20130007149A/en
Publication of KR20130007149A publication Critical patent/KR20130007149A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The present invention provides a substrate processing apparatus for depositing a thin film on a substrate. According to an embodiment of the present invention, a substrate processing apparatus has a heater and a blocking unit. The blocking unit blocks the process gas from being attached to the heater. This may prevent the process gas and the by-products from adhering to the heater to oxidize the heater or to act as particles.

Figure P1020110063995

Description

Apparatus for treating substrate

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus for depositing a thin film on a substrate.

There is a need for a process for depositing a thin film on a substrate for the production of an integrated circuit such as a semiconductor chip or a light emitting diode (LED). Recently, due to the miniaturization of semiconductor devices and the development of high efficiency and high power LEDs, metal organic chemical vapor deposition (MOCVD) has been in the spotlight during the deposition process. Metal organic chemical vapor deposition (CVD) is one of chemical vapor deposition (CVD) methods for depositing and attaching a metal compound on a substrate using a pyrolysis reaction of an organic metal. The substrate may be a sapphire (Al 2 O 3 ) and silicon carbide (SiC) substrate used in the manufacture of epi wafers or a silicon wafer used in the manufacture of semiconductor integrated circuits (IC) during the manufacturing process of the light emitting diodes. Can be.

In general, the metal organic chemical vapor deposition apparatus proceeds under high temperature conditions. The apparatus includes a susceptor for supporting the substrate and a heater for heating the substrate. When the substrate is seated in the susceptor, the heater heats the substrate. The process gas is supplied to the heated substrate to deposit a thin film. Process gases and process by-products generated during the process may be attached to the heater as well as the substrate to oxidize the heater or act as particles.

Embodiments of the present invention seek to prevent process gases and process by-products from adhering to the heater.

According to an embodiment of the present invention, a substrate processing apparatus for depositing a thin film on a substrate is provided. The substrate processing apparatus is provided in a shape of a substrate supporting unit having a chamber and a susceptor supporting the substrate in the chamber, a gas supply unit supplying a process gas onto the substrate, and a ring surrounding the substrate supporting unit. An exhaust unit for discharging the process gas to the outside and a susceptor positioned below the susceptor, a heater for heating the substrate, and a blocking unit to block the process gas from flowing into the region provided with the heater.

The blocking unit may be provided in a cylindrical shape, and the heater may be located in the blocking unit. The blocking unit includes a horizontal blocking plate positioned between the susceptor and the heater and having a disc shape, wherein a bottom edge of the horizontal blocking plate has a stepped shape with a center portion of the bottom of the horizontal blocking plate. The bottom edge of the plate may be placed on the top surface of the exhaust unit. The blocking unit includes a vertical blocking plate positioned between the exhaust unit and the heater and having a ring shape, wherein an upper edge of the vertical blocking plate is provided with a protrusion protruding upward, and the protrusion is the horizontal blocking. It can be inserted into the bottom edge of the plate. The blocking unit may further include a first nozzle for injecting purge gas into the blocking unit. The blocking unit may further include a second nozzle for injecting purge gas from the outer side of the exhaust unit to the upper direction. The horizontal blocking plate and the vertical blocking plate may be made of quartz.

According to an embodiment of the present invention, it is possible to minimize the process gas and the process by-product attached to the heater.

1 is a cross-sectional view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
Fig. 2 is a cross-sectional view schematically showing the substrate holder of Fig. 1;
3 is a plan view schematically showing the susceptor of FIG.
4 is an exploded perspective view schematically illustrating the blocking unit of FIG. 1.
5 is a cross-sectional view illustrating a flow of process gas and purge gas during a process in the substrate processing apparatus of FIG. 1.

Hereinafter, a substrate processing apparatus according to a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. Therefore, the shapes and the like of the illustrated components in the drawings are exaggerated in order to emphasize a clear explanation.

According to an embodiment of the present invention, the substrate processing apparatus 10 will be described taking as an example a metal organic chemical vapor deposition apparatus used for LED (LED) manufacturing. Alternatively, the substrate processing apparatus 10 may be a metal organic chemical vapor deposition apparatus used for manufacturing semiconductor chips. In the embodiment of the present invention, as the substrate W, sapphire and silicon carbide substrates used in the light emitting diode manufacturing process will be described as an example. However, unlike the above, the substrate W may be a silicon wafer used in the manufacturing process of the semiconductor integrated circuit.

Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. 1 to 5. 1 is a view schematically showing a substrate processing apparatus according to an embodiment of the present invention. Referring to FIG. 1, the substrate processing apparatus 10 includes a chamber 10, a substrate support unit 200, an injection unit 300, an exhaust unit 400, a heater 500, and a blocking unit 600. do.

The chamber 10 has a cylindrical shape, and provides a space in which the process proceeds. An opening is formed in the center of the upper wall 140 of the chamber 10. The opening serves as a passage for bringing in or taking out the substrate W in the chamber 10. The opening is opened and closed by the door 180. Alternatively, a passage for loading or unloading the substrate W may be provided on the sidewall 160 of the chamber 10.

The substrate support unit 200 has a substrate holder 210 and a susceptor 230. Fig. 2 is a cross-sectional view schematically showing the substrate holder of Fig. 1; Referring to Figure 2, the substrate holder 210 supports the substrate (W). The substrate holder 210 generally has a disc shape, and a groove 211 is formed on an upper surface thereof. One groove 211 is provided at the center of the upper surface of the substrate holder 210. Optionally, a plurality of grooves 211 may be provided in one substrate holder 210. A fixing groove 215 is formed in the center of the bottom surface of the substrate holder 210.

3 is a plan view schematically showing the susceptor of FIG. Referring to FIG. 3, the susceptor 230 has the shape of a disc. A plurality of seating grooves 235 are formed at the top edge of the susceptor 230. The substrate holder 210 is placed in the mounting groove 235. The seating grooves 235 may be provided in the same size and shape. According to one example, the seating groove 235 is provided in a circular shape. The seating groove 235 may be provided in ten. However, the number of seating grooves 235 is not limited thereto. Each seating groove 235 is provided spaced apart from each other at equal intervals. The mounting groove 235 may be provided with the same size or larger than the substrate holder 210. A protrusion 237 protruding upward is formed at the center of the seating recess 235. The substrate holder 210 placed in the mounting groove 235 has a protrusion 237 inserted into the fixing groove 215. Injection holes 231 for injecting gas are formed in an upper surface of each of the mounting grooves 235. A plurality of injection holes 231 may be provided in one seating groove 235. Each injection hole 231 is provided to surround the protrusion 237 and is spaced apart from each other at the same interval. Each injection hole 231 injects gas. A guide groove 232 connected to the injection hole 231 is formed on an upper surface of the seating groove 235. The guide groove 232 is formed to be rounded from the injection hole 231. The guide groove 232 guides a direction in which gas flows so as to be rotatable in a floating state of the substrate holder 210. The gas supply line 233 is formed in the susceptor 230. The gas supply line 233 is connected to each injection hole 231 to supply gas. The gas supplied to the injection hole 231 may be an inert gas such as nitrogen gas. The susceptor 230 is rotatably provided with respect to its central axis. A rotation shaft 250 for rotating the susceptor 230 is coupled to the bottom of the susceptor 230. A motor 270 is coupled to the rotating shaft 250 and the rotating force of the motor 270 is transmitted to the susceptor 230 through the rotating shaft 250.

The injection unit 300 supplies a process gas onto the substrate W supported by the substrate support unit 200. Injection unit 300 is provided in a cylindrical shape. The injection unit 300 is fixedly coupled to the door 180. The injection unit 300 is disposed such that the bottom thereof faces the top surface of the susceptor 230. The width of the injection unit 300 is provided smaller than the upper surface of the susceptor 230. When viewed from the top of the injection unit 300 and the mounting groove 235 is provided so as not to overlap each other. A plurality of discharge holes 311 are formed on the outer surface of the injection unit 300. The discharge holes 311 are formed along the circumferential direction of the injection unit 300. The discharge holes 311 are spaced apart from each other at equal intervals. Each discharge hole 311 is provided in the same size with each other. The injection unit 300 supplies a process gas onto the substrate W through each discharge hole 311. Inside the injection unit 300 is formed a line through which cooling water flows. The cooling water prevents the process gases from reacting with each other in the injection unit 300. In addition, the cooling water prevents the reaction by-products generated during the process from being attached to the outer surface of the injection unit 300.

Unlike the above-described method, the injection unit 300 may be provided as a shower head in which a discharge hole 311 is formed at a bottom thereof and injects process gas in a vertical direction. In addition, the injection unit 300 may be provided as a nozzle formed on the side wall of the chamber 10.

The exhaust unit 400 is provided in a ring shape surrounding the susceptor 230 and the rotation shaft 250. The exhaust unit 400 has an exhaust ring 410, an exhaust pipe 430, and a pump 450. The exhaust ring 410 is provided in a ring shape and is arranged to surround the susceptor 230. The inner side of the exhaust ring 410 is positioned adjacent to the susceptor 230, and the outer side of the exhaust ring 410 is positioned adjacent to the sidewall 160 of the chamber 10. The upper end of the exhaust ring 410 is disposed equal to or lower than the upper surface of the susceptor 230. A plurality of exhaust holes 411 are formed on the upper surface of the exhaust ring 410. The exhaust holes 411 are formed to be spaced apart at regular intervals along the circumferential direction of the exhaust ring 410. The exhaust pipe 430 is connected to the bottom of the exhaust ring 410. The pump 450 is installed in the exhaust pipe 430 and adjusts the internal pressure of the exhaust pipe 430. After the process by-product generated in the chamber 10 is introduced into the exhaust ring 410 by the pump 450, it is discharged to the outside through the exhaust pipe 430.

The heater 500 is installed below the susceptor 230. The heater 500 is disposed to surround the rotating shaft 250 in a spiral shape. The heater 500 is provided in parallel with the bottom of the susceptor 230. The heater 500 heats the substrate W supported by the susceptor 230 to a process temperature. For example, a heating means such as a radio frequency (RF) coil may be used as the heater 500.

The blocking unit 600 blocks the process gas from being attached to the heater 500. The blocking unit 600 has a cylindrical shape with an open lower portion. The blocking unit 600 has a horizontal blocking plate 610, a vertical blocking plate 630, and an injection member 650.

4 is an exploded perspective view schematically illustrating the horizontal and vertical blocking plates of FIG. 1. Referring to FIG. 4, a horizontal blocking plate 610 is provided between the susceptor 230 and the heater 500 to block the flow of process gas from the upper region of the heater 500. The horizontal blocking plate 610 is provided in a circular plate shape through which the rotating shaft 250 penetrates in the center. The top surface of the horizontal blocking plate 610 is positioned to face the bottom of the susceptor 230. The bottom edge of the horizontal blocking plate 610 has a stepped shape with the center of the bottom of the horizontal blocking plate 610. As a result, the bottom center of the horizontal blocking plate 610 and the bottom edge of the horizontal blocking plate 610 have different heights. The stepped area at the bottom edge of the horizontal blocking plate 610 is placed on the top surface of the exhaust ring 410. When viewed from the top, the horizontal blocking plate 610 is placed so as not to overlap the exhaust hole 411 of the exhaust ring 410.

The vertical blocking plate 630 blocks the process gas from flowing into the blocking unit 600 through a gap between the horizontal blocking plate 610 and the exhaust ring 410. The vertical blocking plate 630 is provided in a ring shape. On the upper surface of the vertical blocking plate 630, a protrusion 631 protruding upward in the circumferential direction is formed at an edge thereof. The protrusion 631 is inserted into the stepped area of the bottom edge of the horizontal blocking plate 610, which is a gap between the horizontal blocking plate 610 and the exhaust ring 410. The outer surface of the vertical blocking plate 630 is in close contact with the inner surface of the exhaust unit 400, the upper end of the projection 631 has the same height as the upper surface of the exhaust ring (410).

The vertical blocking plate 630 and the horizontal blocking plate 610 may be made of the same material. The vertical blocking plate 630 and the horizontal blocking plate 610 may be made of a material having a low influence on high temperature. For example, the horizontal blocking plate 610 and the vertical blocking plate 630 may be made of quartz.

The injection member 650 includes a first nozzle 651 and a second nozzle 653 for purging the purge gas.

The first nozzle 651 is installed on the lower wall of the chamber 10 facing the horizontal blocking plate 610. The first nozzle 651 purges the purge gas into the blocking unit 600. As a result, the first nozzle 651 prevents the process gas and the process by-products from flowing into the gap between the horizontal blocking plate 610 and the exhaust ring 410 or between the horizontal blocking plate 610 and the vertical blocking plate 630. do. One or more first nozzles 651 may be provided.

The second nozzle 653 is installed on the lower wall of the chamber 10 located outside the exhaust unit 400. The second nozzle 653 purges the purge gas in an upward direction. As a result, the second nozzle 653 blocks the process gas and the by-products from stagnation in the lower side of the chamber 10.

5 is a cross-sectional view illustrating a flow of process gas and purge gas during a process in the substrate processing apparatus of FIG. 1. Referring to Fig. 5, the solid line indicates the flow of process gas, and the dotted line indicates the flow of purge gas. When the substrate W is loaded into the chamber 10 and placed in the substrate holder 210, the inside of the chamber 10 is sealed. The exhaust unit 400 maintains the internal pressure of the chamber 10 in a vacuum state, and the heater 500 heats the substrate W to a process temperature. When the internal pressure of the chamber 10 and the temperature of the substrate W satisfy the process conditions, the injection unit 300 supplies the process gas onto the substrate W. At the same time, the first nozzle 651 and the second nozzle 653 purge the purge gas. The first nozzle 651 fills the interior of the blocking unit 600 with purge gas. When a predetermined time passes, the purge gas flows out of the blocking unit 600 through a gap between the horizontal blocking plate 610, the vertical blocking plate 630, and the exhaust ring 410. The second nozzle 653 injects purge gas from the outside of the exhaust unit 400 to the upper direction. The purge gas is injected to the upper end of the exhaust unit 400 and then exhausted through the exhaust hole 411. Due to the purge gas, the process gas does not flow into the outside of the exhaust unit 400 and the inside of the blocking unit 600 provided with the heater 500. As a result, the process gas is exhausted through the exhaust unit 400 without being stagnated in a predetermined region within the chamber 100 or entering a region provided with the heater 500.

100: chamber 200: substrate support unit
300: injection unit 400: exhaust unit
500: heater 600: blocking unit
610: horizontal blocker 630: vertical blocker

Claims (2)

A chamber;
A substrate support unit having a susceptor for supporting a substrate in the chamber;
A gas supply unit supplying a process gas onto the substrate;
An exhaust unit provided in a ring shape surrounding the substrate support unit and discharging the process gas to the outside in the chamber;
A heater positioned below the susceptor and heating the substrate; And
And a blocking unit which blocks a process gas from flowing into a region provided with the heater. The method of claim 1,
The blocking unit,
A horizontal blocking plate positioned between the susceptor and the heater and having a disc shape;
A vertical blocking plate positioned between the exhaust unit and the heater and having a ring shape;
The bottom edge portion of the horizontal blocking plate has a stepped shape with the bottom center portion of the horizontal blocking plate, and the bottom edge portion of the horizontal blocking plate is placed on the upper surface of the exhaust unit,
The upper surface edge of the vertical blocking plate is formed with a projection protruding upward in the circumferential direction, the projection is characterized in that the projection is inserted into the bottom edge of the horizontal blocking plate substrate processing apparatus.
KR1020110063995A 2011-06-29 2011-06-29 Apparatus for treating substrate KR20130007149A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101503255B1 (en) * 2014-10-10 2015-03-18 (주) 일하하이텍 Apparatus and method of processing substrate
WO2015041392A1 (en) * 2013-09-23 2015-03-26 국제엘렉트릭코리아 주식회사 Heater member and substrate processing apparatus having same
KR20150090498A (en) * 2014-01-29 2015-08-06 세메스 주식회사 Heating unit, Appratus and System for treating substrate
WO2017209802A1 (en) * 2016-06-03 2017-12-07 Applied Materials, Inc. Effective and novel design for lower particle count and better wafer quality by diffusing the flow inside the chamber
KR20230074624A (en) * 2020-11-25 2023-05-30 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. semiconductor process device

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015041392A1 (en) * 2013-09-23 2015-03-26 국제엘렉트릭코리아 주식회사 Heater member and substrate processing apparatus having same
KR20150090498A (en) * 2014-01-29 2015-08-06 세메스 주식회사 Heating unit, Appratus and System for treating substrate
KR101503255B1 (en) * 2014-10-10 2015-03-18 (주) 일하하이텍 Apparatus and method of processing substrate
WO2017209802A1 (en) * 2016-06-03 2017-12-07 Applied Materials, Inc. Effective and novel design for lower particle count and better wafer quality by diffusing the flow inside the chamber
KR20190004836A (en) * 2016-06-03 2019-01-14 어플라이드 머티어리얼스, 인코포레이티드 Effective and new design for lower particle count and better wafer quality by diffusing the flow inside the chamber
CN109478494A (en) * 2016-06-03 2019-03-15 应用材料公司 Pass through effective and novel design of lower particle counting obtained by the air-flow inside diffusion chamber and preferable chip quality
JP2019522899A (en) * 2016-06-03 2019-08-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Effective and new design for low particle count and better wafer quality by diffusing the flow inside the chamber
US10619235B2 (en) 2016-06-03 2020-04-14 Applied Materials, Inc. Effective and novel design for lower particle count and better wafer quality by diffusing the flow inside the chamber
US10808310B2 (en) 2016-06-03 2020-10-20 Applied Mateirals, Inc. Effective and novel design for lower particle count and better wafer quality by diffusing the flow inside the chamber
JP2020205434A (en) * 2016-06-03 2020-12-24 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Effective and novel design for lower particle count and better wafer quality by diffusing flow inside chamber
KR20210008160A (en) * 2016-06-03 2021-01-20 어플라이드 머티어리얼스, 인코포레이티드 Effective and novel design for lower particle count and better wafer quality by diffusing the flow inside the chamber
KR20230074624A (en) * 2020-11-25 2023-05-30 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. semiconductor process device

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