KR101329318B1 - Nozzle unit, apparatus and method for treating substrate with the same - Google Patents

Abstract

A substrate processing apparatus is disclosed. Substrate processing apparatus according to an embodiment of the present invention the process chamber; A support unit disposed in the process chamber and supporting a substrate; And a nozzle unit disposed in the process chamber and injecting gas, wherein the nozzle unit comprises: a first nozzle injecting the process gas; And a second nozzle for injecting the blocking gas into an area adjacent to the inner wall of the process chamber or the support unit to prevent the process gas from being deposited on the inner wall or the support unit of the process chamber.

Description

Nozzle unit, substrate processing apparatus including same and substrate processing method using same {NOZZLE UNIT, APPARATUS AND METHOD FOR TREATING SUBSTRATE WITH THE SAME}

The present invention relates to a nozzle unit, a substrate processing apparatus including the same, and a substrate processing method using the same, and more particularly, a nozzle unit for injecting a process gas deposited on a substrate to form a thin film, and a substrate processing apparatus including the same. It relates to a substrate processing method to be used.

A semiconductor device is manufactured by forming a circuit pattern on a metal oxide film on a substrate such as a silicon wafer, and a metal-organic chemical vapor deposition (MOCVD) method is widely used as a thin film forming method for coating a metal oxide film on a substrate. It is used.

The metal organic chemical vapor deposition method vaporizes a liquid metal organic compound, supplies a process gas mixed with a hydrogen compound to a substrate, heats it to a high temperature, induces thermal decomposition of the process gas, and deposits a metal thin film on the substrate.

However, when the chamber or the nozzle is exposed to high temperatures in the process of injecting the process gas, parasitic deposition that occurs on the wall or the nozzle of the chamber occurs before the process gas reaches the substrate. When parasitic deposition occurs, impurities are generated in the chamber and the process gas is unevenly injected, which adversely affects the quality of the metal oxide film, resulting in a decrease in yield and performance of the semiconductor device.

Korea Patent Registration 10-0996210

One object of the present invention is to provide a substrate processing apparatus and substrate processing method capable of preventing parasitic deposition and a nozzle unit used therein.

Another object of the present invention is to provide a substrate processing apparatus and substrate processing method capable of forming a uniform metal oxide film on a substrate and a nozzle unit used therein.

According to one aspect of the invention, the process chamber; A support unit disposed in the process chamber and supporting a substrate; And a nozzle unit disposed in the process chamber and injecting gas, wherein the nozzle unit comprises: a first nozzle injecting the process gas; And a second nozzle for injecting a blocking gas into an inner wall of the process chamber or an adjacent region of the support unit to prevent the process gas from being deposited on the inner wall of the process chamber or the support unit. Can be.

The first nozzle may inject the process gas in a horizontal direction, and the second nozzle may be disposed in at least one of an upper portion and a lower portion of the first nozzle, and the blocking gas may be disposed in a direction parallel to the process gas. Can spray

In addition, the nozzle unit may include a first inner tube into which the blocking gas is introduced; A second inner tube surrounding the first inner tube and into which a process gas is introduced; Surrounding the second inner tube, wherein the cooling fluid for cooling the process gas in the second inner tube flows; The first nozzle may be formed to extend from the second inner tube to the external appearance, and the second nozzle may be formed to extend from the first inner tube to the external appearance.

In addition, the nozzle unit may include an inner tube into which a process gas is introduced; Surrounding the inner tube and including an exterior through which a cooling fluid for cooling the process gas in the inner tube flows; The first nozzle may be formed to extend from the inner tube to the exterior, and the second nozzle may be formed at an outer side of the upper end of the exterior and a lower end of the exterior.

In addition, the nozzle unit may include an inner tube into which a process gas is introduced; Surrounding the inner tube and including an exterior through which a cooling fluid for cooling the process gas in the inner tube flows; The first nozzle is formed to extend from the inner tube to the outer tube, and the second nozzle is formed along the circumferential direction on an inner surface of the outer tube and is connected to the annular tube into which the blocking gas is introduced and the annular tube. It may include the injection holes formed in.

In addition, the support unit has a plate shape, a plurality of holder grooves for receiving the substrate holder is formed along the circumferential direction in the edge region of the upper surface; And a rotation driving member for rotating the support plate.

In addition, the nozzle unit may be disposed above the center region of the support plate, and the plurality of first nozzles and the second nozzle may be provided to form a radial gas flow from the center region of the support plate to the edge region. have.

In addition, a second groove may be formed in an upper center area of the support plate, and a lower end of the nozzle unit may be inserted into the second groove so that the lower end of the nozzle unit is spaced apart from the bottom surface of the second groove.

According to one aspect of the invention, the nozzles have a cylindrical nozzle body disposed along the circumferential direction; The nozzles may include first nozzles for spraying a process gas in a horizontal direction; And second nozzles positioned at upper or lower ends of the first nozzles and spraying the blocking gas in a horizontal direction parallel to the process gas.

The second nozzles may be divided into a first group located at an upper end of the first nozzle and a second group located at a lower end of the first nozzle, and the second nozzles belonging to the same group may have the same height of the nozzle body. Can be provided along the circumferential direction.

In addition, the second nozzles belonging to the first group are provided to inject a blocking gas into an area adjacent to the upper wall of the processing chamber in which the nozzle unit is installed, and the second nozzles belonging to the second group support the substrates on which the substrates are placed. It may be provided to inject the blocking gas into an area adjacent the plate.

In addition, the nozzle body may include a first inner tube into which the blocking gas is introduced; A second inner tube surrounding the first inner tube and into which a process gas is introduced; Surrounding the second inner tube, wherein the cooling fluid for cooling the process gas in the second inner tube flows; The first nozzles may be provided to spray the process gas in the second inner tube to the outside of the outer tube, and the second nozzles may be provided to spray the blocking gas in the first inner tube to the outside of the outer tube.

The nozzle body may further include an inner tube through which a process gas is introduced; Surrounding the inner tube and including an exterior through which a cooling fluid for cooling the process gas in the inner tube flows; The first nozzles may be provided to inject the process gas in the inner tube to the outside of the exterior, and the second nozzles may be provided to the outside of the top of the exterior and the bottom of the exterior.

The nozzle body may further include an inner tube through which a process gas is introduced; Surrounding the inner tube and including an exterior through which a cooling fluid for cooling the process gas in the inner tube flows; The first nozzles are provided to inject the process gas in the inner tube to the outside of the outer tube, and the second nozzles are formed along the circumferential direction on the inner surface of the outer tube, and the annular tube and the annular tube into which the blocking gas is introduced. It may include a plurality of injection holes formed in the exterior to be connected.

According to one aspect of the invention, the step of loading a substrate in the processing chamber; Heating the substrate; And spraying a process gas onto the substrate; In the process of spraying the process gas to the substrate may be provided a thin film deposition method comprising the step of spraying the blocking gas so that the process gas is not deposited on the inner wall of the process chamber or the support plate on which the substrate is seated.

In addition, the blocking gas may be injected before or after the process gas is injected or simultaneously with the process gas.

In addition, a plurality of substrates may be seated along the circumferential direction of the edge region of the support plate, and the process gas may be radially formed through the first nozzles of the nozzle unit disposed above the processing chamber corresponding to the center of the support plate. The blocking gas may be injected in a horizontal direction through second nozzles between the first nozzles and an upper wall of the processing chamber or between the first nozzle and the support plate.

In addition, the process gas may be injected through the first nozzles after being cooled by a cooling fluid.

In addition, the blocking gas may be injected through the second nozzles after being cooled by a cooling fluid.

The support plate may rotate about a magnetic center axis, and each of the plurality of substrates may rotate about a magnetic center axis.

According to the present invention, parasitic deposition may be prevented in the thin film deposition process.

According to the present invention, a uniform metal oxide film can be formed on the substrate.

According to the present invention, the yield and quality of the semiconductor device can be improved.

1 is a cross-sectional view of an embodiment of a substrate processing apparatus according to the present invention.
2 is a plan view of the support unit of FIG. 1.
3 is a cross-sectional view of the nozzle unit of FIG. 1.
4 is a cutaway perspective view of the nozzle unit of FIG. 1.
5 is a plan sectional view of the nozzle unit.
6 is a view of the flow of gas injected from the nozzle unit of FIG.
7 is a flow chart of one embodiment of a substrate processing method according to the present invention.
8 is a view showing another embodiment of a nozzle unit.
9 and 10 show still another embodiment of the nozzle unit.
11 is a view showing another arrangement structure of the support unit and the nozzle unit.
12 is a view showing another embodiment of a substrate processing apparatus according to the present invention.
13 is a view showing another embodiment of a substrate processing apparatus according to the present invention.

The terms and accompanying drawings used herein are for the purpose of illustrating the present invention easily, and the present invention is not limited by the terms and drawings.

The detailed description of known techniques which are not closely related to the idea of the present invention among the techniques used in the present invention will be omitted.

Since the embodiments described herein are intended to clearly describe the present invention to those skilled in the art, the present invention is not limited to the embodiments described herein, but the scope of the present invention Should be construed as including modifications or variations without departing from the spirit of the invention.

Hereinafter, a substrate processing apparatus 1000 according to the present invention will be described.

The substrate processing apparatus 1000 deposits a thin film on the substrate S by using a metal organic chemical vapor deposition method. Herein, the substrate S is a comprehensive concept including all semiconductor substrates and substrates used for manufacturing a liquid crystal display (LCD). For example, the substrate S may be used for manufacturing an epi wafer. It may be a sapphire (Al ₂ O ₃ ) substrate, a silicon carbide (SiC) substrate or a silicon wafer used in the manufacture of a semiconductor integrated circuit.

Hereinafter, an embodiment of the substrate processing apparatus 1000 according to the present invention will be described.

1 is a cross-sectional view of an embodiment of a substrate processing apparatus 1000 according to the present invention.

The substrate processing apparatus 1000 includes a process chamber 1100, a support unit 1200, a heating unit 1300, a nozzle unit 1400, and an exhaust unit 1500.

The process chamber 1100 provides a space in which the deposition process according to the metal organic chemical vapor deposition method is performed. The substrate S is mounted on the support unit 1200. The heating unit 1300 heats the substrate S. The nozzle unit 1400 injects gas into the process chamber 1100, and the exhaust unit 1500 exhausts gas from the process chamber 1100.

The process chamber 1100 includes walls 1110, 1120, and 1130 that isolate the interior of the process chamber 1100 from the outside. The wall includes an upper wall 1110, a side wall 1120 extending downward from an edge of the upper wall 1110, and a lower wall 1130 coupled to the bottom of the side wall 1120 to face the upper wall 1110. do.

The upper wall 1110 and the lower wall 1130 may be provided in a disc shape.

The sidewall 1120 is provided with a passage 1140 through which the substrate S is carried in or taken out. The passage 1140 is provided with a door 1150 that opens and closes the passage 1140. The door 1150 may move in a direction perpendicular to the longitudinal direction of the passage 1140 by the operation of the elevator 1160 coupled to the door 1150 to open and close the passage 1140.

The support unit 1200 is disposed in the process chamber 1100. The support unit 1200 includes a support plate 1210 and a rotation driving member 1220. The substrate S is seated on the support plate 1210, and the rotation driving member 1220 rotates the support plate 1210.

2 is a plan view of the support unit 1200 of FIG. 1.

The support plate 1210 may be provided in a disc shape. The support plate 1210 may be provided of a material having high electrical conductivity. For example, the material of the support plate 1210 may be graphite.

A plurality of holder grooves 1211 are formed along the circumference of the edge region of the upper surface of the support plate 1210. Each holder groove 1211 may be located on the same circumference from the center of the support plate 1210.

In this embodiment, the support plate 1210 is shown as having six holder grooves 1211 at intervals of 60 degrees, the number of holder grooves 1211 is the size of the support plate 1210, the size of the substrate and the holder groove ( 1211), depending on the arrangement. In addition, the arrangement or shape of the holder groove 1211 may be different from the above-described example.

The holder 1212 is inserted into the holder groove 1211. The substrate S is mounted on the holder 1212. One or more substrates may be seated in one holder. The holder 1212 may have an outer diameter smaller than the diameter of the holder groove 1211 and an inner diameter larger than the diameter of the substrate S. The holder 1212 may have a cylindrical shape with an open top. The holder 1212 may be provided of a material having high electrical conductivity. For example, the material of the holder 1212 may be graphite.

The holder 1212 rotates about the magnetic center axis by the principle of the gas bearing. The lower surface of the holder groove 1211 is provided with a spiral rotating groove 1213. The rotary groove 1213 is supplied with a rotating gas from a gas supply member (not shown). The supplied rotating gas flows along the rotating groove 1213 and transmits a rotating force to the lower surface of the hold to rotate the holder 1212. The substrate S rotates in accordance with the rotation of the holder 1212. The rotating gas is exhausted through the space between the holder 1212 and the holder groove 1211.

The rotation driving member 1220 rotates the support plate 1210. The rotation driving member 1220 includes a rotation shaft and a motor 1222. The drive shaft 1221 may be inserted to penetrate the lower wall 1130 of the process chamber 1100. The driving shaft 1221 has an upper end coupled to a lower surface of the support plate 1210, and a lower end coupled to the motor 1222. The drive shaft 1221 can be rotated or lifted by the motor 1222. When the drive shaft 1221 is rotated or lifted by the motor 1222, the support plate 1210 is rotated or lifted by the drive shaft 1221.

The heating unit 1300 heats the substrate S mounted on the support plate 1210. The heating unit 1300 may be disposed below the support plate 1210 or inside the support plate 1210. As the heating unit 1300, for example, a high frequency heating means such as a radio frequency (RF) coil may be used. The RF coil is disposed to surround the drive shaft 1221 and receives power from the outside to induce and heat the support plate 1210, and heat the substrate S to a process temperature through the holder 1212 of the support plate 1210. Can be.

The nozzle unit 1400 is spaced apart from the upper portion of the central region of the support plate 1210 and injects gas into the process chamber 1100. The nozzle unit 1400 includes a nozzle body 1410, a first nozzle 1450, and a second nozzle 1460. The first nozzle 1450 injects a process gas and the second nozzle 1460 injects a blocking gas.

In this case, a gas in which a metal organic compound and a hydrogen compound are mixed may be used as the process gas. The component of the metal organic compound may be aluminum (Al), gallium (Ga), indium (In), and the like, and the component of the hydrogen compound may be arsene, phosphine, ammonia, or the like. The first nozzle 1450 may inject the process gas together with the carrier gas to assist in the injection of the process gas. The component of the carrier gas may be hydrogen (H ₂ ), nitrogen (N ₂ ), or the like. As the blocking gas, an inert gas such as helium (He), argon (Ne), or a gas having a component similar to a carrier gas may be used.

The exhaust unit 1500 may include an exhaust line 1510, an exhaust pump 1520, and an exhaust valve 1530. One end of the exhaust line 1510 is connected to an exhaust hole 1170 formed in the process chamber 1100, and the other end thereof is connected to the exhaust pump 1520.

The exhaust pump 1520 applies a negative pressure to the interior of the process chamber 1100 through the exhaust line 1510, and thus, the reaction gas, the carrier gas, the blocking gas and the product generated from the deposition process from the interior of the process chamber 1100. Etc. are exhausted. The exhaust pump 1520 may control the internal pressure of the process chamber 1100 through the exhaust process. For example, the internal pressure of the process chamber 1100 may be adjusted in various ranges from a water vacuum state to an atmospheric pressure or higher. The exhaust valve 1530 is installed on the exhaust line 1510 to control the flow rate of the exhaust line 1510.

3 is a cross-sectional view of the nozzle unit 1400 of FIG. 1, and FIG. 4 is a cutaway perspective view of the nozzle unit 1400 of FIG. 1. 5 is a plan sectional view of the nozzle unit.

3 to 5, the nozzle body 1410 includes an exterior 1411, a second inner tube 1412, and a first inner tube 1413. The pipes 1411, 1412, 1413, the side is installed in the longitudinal direction of the vertical direction, the upper surface is coupled to the upper end of the side, the lower surface is coupled to the lower end of the side. The exterior 1411 surrounds the second inner tube 1412, and the second inner tube 1412 is provided to surround the first inner tube 1413. The top and bottom surfaces of the tubes 1411, 1412, 1413 may be shared with each other. The tubes 1411, 1412, 1413 may be provided in a cylindrical shape.

Inside the nozzle body 1410 by the tubes 1411, 1412, and 1413, an outer space 1420, a second inner tube 1412, and a first inner tube 1413 between the exterior 1411 and the second inner tube 1412. A second inner space 1430 between and a first inner space 1440 inside the first inner tube 1413 are provided. Cooling fluid flows into the outer space 1420, reaction gas flows into the second inner space 1430, and blocking gas flows into the first inner space 1440.

A first process gas inlet hole 1431 and a second process gas inlet hole 1434 are formed at an upper portion of the second inner tube 1412. The first process gas inlet hole 1431 is connected to the first process gas line 1432, and the first process gas line 1432 is connected to the first process gas supply 1433 in which the metal organic compound is stored. The second process gas inlet hole 1434 is connected to the second process gas line 1435, and the second process gas line 1435 is connected to the second process gas supply source 1436 in which the hydrogen compound is stored. Gases of the metal organic compound and the hydrogen compound are introduced into the second inner space 1430 through the first process gas inlet hole 1431 and the second process gas inlet hole 1434. In the second internal space 1430, a metal organic compound and a hydrogen compound are mixed to generate a process gas. Meanwhile, a carrier gas inflow hole through which the carrier gas is introduced may be further formed in an upper portion of the second inner tube 1412.

A blocking gas inlet hole (1441) is formed on the upper portion of the first inner tube (1413). The blocking gas inlet hole 1442 is connected to the blocking gas line 1442, and the blocking gas line 1442 is connected to the blocking gas supply source 1443. The blocking gas is introduced into the first internal space 1440 through the blocking gas line 1442 and the blocking gas inlet hole 1442 from the blocking gas supply 1443.

In the upper portion of the exterior 1411, a cooling fluid inflow hole 1421 is formed at one side, and a cooling fluid recovery hole 1422 is formed at the other side. The cooling fluid inlet hole 1421 is connected to the cooling fluid inlet line 1423, and the cooling fluid inlet line 1423 is connected to the cooling fluid supply source 1425. The cooling fluid recovery hole 1422 is connected to the cooling fluid recovery line 1424, and the cooling fluid recovery line 1424 is connected to the cooling fluid supply source 1425. The cooling fluid is introduced into the external space 1420 through the cooling fluid inlet line 1423 and the cooling fluid inlet hole 1421 from the cooling fluid source 1425, and the cooling fluid recovery hole 1422 from the external space 1420. The cooling fluid recovery line 1424 is recovered and circulated to the cooling fluid supply 1425. The temperature control member 1426 is installed in the cooling fluid inlet line 1423. The temperature control member 1426 controls the temperature of the cooling fluid flowing into the external space 1420 by controlling the temperature of the cooling fluid flowing through the cooling fluid inflow line 1423. As the cooling fluid, an inert gas such as water (H ₂ O) or nitrogen gas may be used.

The first nozzle 1450 is installed to extend from the second inner tube 1412 to the exterior 1411 so that the longitudinal direction thereof is in the horizontal direction. The first nozzle 1450 may be provided in plurality in the circumferential direction of the second inner tube 1412. In addition, the first nozzle 1450 may be provided in plurality in the vertical direction spaced apart from the second inner tube (1412). In addition, the first nozzle 1450 may be provided in a plurality of sets of a plurality of first nozzles 1450 provided in a circumferential direction in combination with the above-described arrangement, spaced apart in the vertical direction (vertical and row). Accordingly, the process gas is injected into the process chamber 1100 from the second inner space 1430 through the first nozzles 1450.

The second nozzle 1460 prevents the process gas injected from the first nozzle 1450 from being deposited on the inner wall of the process chamber 1100 or a component installed inside the process chamber 1100 including the support unit 1200. In order to do so, the blocking gas is injected into the inner wall of the process chamber 1100 or the adjacent area of the support unit 1200.

For example, the second nozzle 1460 is divided into a first group positioned above the first nozzles 1450 and a second group positioned below the first nozzle 1450. The second nozzles 1460 belonging to the first group positioned above the first nozzles 1450 may inject a blocking gas between the first nozzle 1450 and the upper wall 1110 of the process chamber 1100. . In addition, the second nozzles 1460 belonging to the second group positioned under the first nozzles 1450 may inject a blocking gas between the first nozzle 1450 and the support unit 1200.

The second nozzle 1460 is installed to extend through the second inner tube 1412 from the first inner tube 1413 to the outer wall 1411 so that the longitudinal direction thereof is parallel to the first nozzle 1450. The second nozzle 1460 may be provided in plurality in a circumferential direction of the first inner tube 1413. The second nozzle 1460 is installed at both the upper, lower or upper portion of the first nozzle 1450. That is, one end of the second nozzle 1460 connected to the exterior 1411 is disposed on both top, bottom, or top and bottom of one end of the first nozzle 1450 connected to the exterior 1411.

5 is a view of the flow of gas injected from the nozzle unit 1400 of FIG.

The first nozzle 1450 injects a process gas into the process chamber 1100. The process gas is injected into the process chamber 1100 from the second internal space 1430 through the first nozzles 1450.

At this time, since the process gas is cooled while passing through the exterior 1420 through which the cooling fluid flows through the first nozzle 1450, the first nozzle 1450 injects the cooled process gas. Since the cooled process gas is not reactive and does not deposit on the process chamber 1100, the support plate, the end of the nozzle, or the like before reaching the substrate S, parasitic deposition is primarily prevented.

The second nozzle 1460 prevents the process gas injected from the first nozzle 1450 from being deposited on the inner wall of the process chamber 1100 or a component installed inside the process chamber 1100 including the support unit 1200. In order to do so, the blocking gas is injected into the inner wall of the process chamber 1100 or the adjacent area of the support unit 1200. Accordingly, the blocking gas is discharged to the upper and lower portions through which the process gas is discharged through the second nozzles 1460. The blocking gas discharged to the upper portion of the process gas prevents the process gas from reaching the upper wall 1110 of the process chamber 1100, and the blocking gas discharged to the lower portion of the process gas is supplied to the support unit 1200. This prevents parasitic deposition by preventing it from reaching.

Hereinafter, a substrate processing method according to the present invention will be described using a substrate processing apparatus 1000 according to the present invention. However, since this is only for ease of description, the substrate processing method according to the present invention may be performed using another apparatus similar to the substrate processing apparatus 1000 according to the present invention.

Hereinafter, an embodiment of a substrate processing method according to the present invention will be described.

7 is a flow chart of one embodiment of a substrate processing method according to the present invention.

In one embodiment of the substrate processing method, the step of mounting the substrate (S110), the step of heating the substrate (S120), the step of spraying the blocking gas (S130), the step of spraying the process gas ( S140, a step of depositing a thin film (S150), a step of removing the process chamber 1100 (S160), and a step of removing the substrate S (S170).

The substrate S is seated on the support unit 1200 (S110). The substrate S is carried out into the process chamber 1100 through a passage 1140 formed in the sidewall 1120 of the process chamber 1100, and the substrate S is taken out from the holder 1212 of the support plate 1210. Is placed on.

The heating unit 1300 heats the substrate S (S120). When the substrate S is placed on the support unit 1200, the heating unit 1300 heats the support plate 1210, thereby heating the substrate S.

When the substrate S is heated to a temperature suitable for the deposition process, the second nozzle 1460 injects a blocking gas (S130), and the first nozzle 1450 injects a process gas (S140). Here, the blocking gas may be injected first and then the process gas may be injected or the blocking gas and the process gas may be injected simultaneously. The injected gas is injected in a state of being cooled by a cooling fluid and thus is not deposited on an inner wall of the process chamber 1100 or a component installed inside the process chamber 1100 such as the nozzle unit 1400 and the support unit 1200. . In addition, since the blocking gas prevents the process gas from moving to the inner wall of the process chamber 1100 or a component installed inside the process chamber 1100, parasitic deposition is more effectively prevented.

The injected process gas is provided on the substrate S and a thin film is deposited on the substrate S (S150). When the process gas is provided to the substrate S, it is adhered to the substrate S by the temperature of the heated substrate S to form a thin film of a metal oxide film. In this case, since the substrate S is rotated by the holder 1212, the process gas may be evenly spread on the substrate S and a thin film may be uniformly formed. According to this process, a metal organic compound vapor deposition method is performed.

When the metal oxide film is formed on the substrate S, the exhaust unit 1500 exhausts the process unit (S160), and when the exhaust is finished, the substrate is formed through the passage 1140 formed in the sidewall 1120 of the process chamber 1100. (S) is carried out to the outside (S170), and the deposition process is completed.

8 is a view showing another embodiment of a nozzle unit.

The nozzle unit 1400a illustrated in FIG. 8 may include second nozzles 1470 provided in separate configurations outside the nozzle body 1410a. The nozzle body 1410a has a double pipe structure composed of an outer tube 1411 and an inner tube 1412. The exterior 1411 is provided to surround the inner tube 1412, and the upper and lower surfaces of the outer tube and the inner tubes 1411 and 1412 may be shared with each other. The outer tube and the inner tubes 1411 and 1412 may be provided in a cylindrical shape.

The tubes 1411 and 1412 provide the outer space 1420 between the exterior 1411 and the inner tube 1412 and the inner space 1430 inside the inner tube 1412 within the nozzle body 1410. Cooling fluid flows into the outer space 1420, and reaction gas flows into the second inner space 1430.

The first nozzle 1450 is installed to extend from the inner tube 1412 to the exterior 1411 so that the longitudinal direction is in the horizontal direction. The process gas is injected into the process chamber 1100 from the internal space 1430 through the first nozzles 1450.

The second nozzles 1470 may inject a blocking gas to prevent the process gas from reaching the upper wall 1110 or the support unit 1200 of the process chamber 1100. Some of the second nozzles 1470 are installed on the upper wall 1110 to inject a blocking gas between the first nozzle 1450 and the upper wall 1110 of the process chamber 1100. The remaining second nozzles 1470 are installed at the lower end of the nozzle body 1410a. The second nozzles 1470 are installed such that the injection direction of the blocking gas is parallel to the injection direction of the process gas. The second nozzles 1470 may be provided in plurality in the circumferential direction of the nozzle body 1410a.

9 and 10 are views showing another embodiment of the nozzle unit.

In the nozzle unit 1400b illustrated in FIGS. 9 and 10, the second nozzles 1480 for spraying the blocking gas are provided on the inner surface of the exterior 1411.

The nozzle body 1410b has a double pipe structure composed of an outer tube 1411 and an inner tube 1412. The exterior 1411 is provided to surround the inner tube 1412, and the upper and lower surfaces of the outer tube and the inner tubes 1411 and 1412 may be shared with each other. The outer tube and the inner tubes 1411 and 1412 may be provided in a cylindrical shape.

The tubes 1411 and 1412 provide the outer space 1420 between the exterior 1411 and the inner tube 1412 and the inner space 1430 inside the inner tube 1412 within the nozzle body 1410b. Cooling fluid flows into the outer space 1420, and reaction gas flows into the second inner space 1430.

The second nozzle 1480 includes an annular tube 1462 and injection holes 1484. The annular tube 1462 is provided along the circumferential direction on the inner side surface of the exterior 1411. The blocking gas flows into the annular tube 1462. The injection holes 1484 are formed in the exterior 1411 so as to be connected to the annular tube 1462.

The second nozzle 1480 is installed at the exterior 1411 so as to be positioned at an upper end of the first nozzle 1450 and a lower end of the first nozzle 1450, respectively. The second nozzle 1480 positioned on the top of the first nozzle 1450 injects a blocking gas into an area adjacent to the upper wall of the processing chamber. The second nozzle 1480 positioned at the bottom of the first nozzle 1450 injects a blocking gas into an area adjacent to the support plate on which the substrates are placed.

11 is a view showing another arrangement structure of the support unit and the nozzle unit.

Referring to FIG. 11, a second groove 1218 is formed in an upper surface center area of the support plate 1210a, and the nozzle body 1410 of the nozzle unit 1400 is spaced apart from the bottom surface of the second groove 1218. It is inserted into the second groove 1218 so as to. Since the vertical distance between the second nozzle 1460 and the support plate 1210a is shortened by this configuration, it is possible to effectively prevent the process gas from being deposited on the support plate 1210a.

12 and 13 are views showing other embodiments of a substrate processing apparatus according to the present invention.

The substrate treating apparatus 1000c illustrated in FIG. 12 shows an example in which the first nozzle 1450c and the second nozzle 1460c of the nozzle unit 1400c are installed on the sidewall 1120 of the process chamber 1100.

In the substrate processing apparatus 1000c illustrated in FIG. 13, the first nozzle 1450c and the second nozzle 1460c of the nozzle unit 1400c are installed on the sidewall 1120 of the process chamber 1100, and the support unit 1200c is provided. Shows an example in which the process is performed while one substrate is seated on the support plate 1210 of FIG.

Is true. Includes walls 1110, 1120, 1130 that isolate the interior of the process chamber 1100 from the outside. The wall includes an upper wall 1110, a side wall 1120 extending downward from an edge of the upper wall 1110, and a lower wall 1130 coupled to the bottom of the side wall 1120 to face the upper wall 1110. do.

In the embodiment of the present invention, an apparatus for depositing a thin film on a substrate by metal organic chemical vapor deposition has been described as an example. However, the present invention is not limited thereto and may be applied to various kinds of deposition apparatuses. In addition, in the embodiment of the present invention, the substrate processing apparatus has been described as an example for depositing a thin film on the substrate. However, the present invention is not limited thereto, and the present invention may be applied to various apparatuses for performing a process by supplying gas or plasma into a chamber provided with a substrate such as etching or ashing.

In addition, in the exemplary embodiment of the present invention, the cooling gas flow path is formed in the nozzle unit as an example, but the cooling gas flow path may not be provided in the nozzle unit.

In addition, in the embodiment of the present invention has been described that the second nozzle is provided on both the top and bottom of the first nozzle. Alternatively, however, the second nozzle may be provided only at the top of the first nozzle, or alternatively, only at the bottom of the first nozzle.

In the embodiments described herein, not all components or components are essential, and thus, the present invention may optionally include a part of the components or components. In addition, since the configuration steps are not necessarily to be performed in the order described, it is also possible that the steps described later are performed before the steps described first.

Furthermore, the above-described embodiments are not necessarily to be performed independently, but may be used individually or in combination with each other.

1000: substrate processing apparatus
1100: process chamber 1110: top wall 1120: side wall
1130: lower wall 1140: passage 1150: door
1160: elevator 1170: exhaust hole
1200: support unit 1210: support plate 1211: holder groove
1212: holder 1213: rotating groove
1220: rotary drive member 1221: drive shaft 1222: motor
1300: heating unit
1400: nozzle unit 1410: nozzle body 1411: appearance
1412: second inner tube 1413: second inner tube
1420: external space 1421: cooling fluid inlet hole 1422: cooling fluid recovery hole
1423: cooling fluid inlet line 1424: cooling fluid recovery line 1425: cooling fluid supply source
1426: temperature control member
1430: second internal space 1431: first process gas inlet hole 1432: first process gas line
1433: first process gas supply source 1434: second process gas inlet hole 1435: second process gas line
1436: second process gas supply source
1440: first internal space 1441: blocking gas inlet hole 1442: blocking gas line
1443: blocking gas supply source
1450: first nozzle 1460: second nozzle
1500: exhaust unit 1510: exhaust line 1520: exhaust pump
1530: exhaust valve
S: substrate

Claims (22)

A process chamber;
A support unit disposed in the process chamber and supporting a substrate; And
Is disposed in the process chamber and includes a nozzle unit for injecting gas,
Wherein the nozzle unit comprises:
A first inner tube into which the blocking gas is introduced;
A second inner tube surrounding the first inner tube and into which a process gas is introduced;
An appearance through which a cooling fluid surrounding the second inner tube flows to cool the process gas in the second inner tube;
A first nozzle formed to extend from the second inner tube to the outer surface and injecting a process gas;
A substrate including a second nozzle formed to extend from the first inner tube to the outer surface and respectively provided at an upper portion and a lower portion of the first nozzle to inject a blocking gas into an inner wall of the process chamber and an adjacent region of the support unit; Processing unit. The method of claim 1,
The first nozzle injects the process gas in a horizontal direction,
And the second nozzle sprays the blocking gas in a direction parallel to the process gas. delete delete A process chamber;
A support unit disposed in the process chamber and supporting a substrate; And
Is disposed in the process chamber and includes a nozzle unit for injecting gas,
The nozzle unit
A first nozzle for injecting a process gas;
A second nozzle for injecting a blocking gas into an inner wall of the process chamber or an adjacent region of the support unit to prevent the process gas from being deposited on the inner wall of the process chamber or the support unit;
The nozzle unit
An inner tube into which a process gas is introduced;
Surrounding the inner tube and including an exterior through which a cooling fluid for cooling the process gas in the inner tube flows;
The first nozzle is formed to extend from the inner tube to the exterior,
The second nozzle is formed on the inner surface of the outer surface in the circumferential direction, the substrate processing apparatus including an annular tube through which the blocking gas flows and the injection holes formed in the outer surface to be connected to the annular tube. 6. The method according to claim 1 or 5,
The support unit
A support plate having a plate shape and formed with a plurality of holder grooves accommodating the substrate holder along a circumferential direction in an edge region of the upper surface; And
And a rotation driving member for rotating the support plate. The method according to claim 6,
The nozzle unit
Disposed on top of the central region of the support plate,
And a plurality of the first nozzle and the second nozzle are provided to form a radial gas flow from the center region of the support plate to the edge region. A process chamber;
A support unit disposed in the process chamber and supporting a substrate; And
Is disposed in the process chamber and includes a nozzle unit for injecting gas,
The support unit
A support plate having a plate shape and formed with a plurality of holder grooves accommodating the substrate holder along a circumferential direction in an edge region of the upper surface; And
A rotation drive member for rotating the support plate,
The nozzle unit
A first nozzle for injecting a process gas;
In order to prevent the process gas is deposited on the inner wall of the process chamber or the support unit includes a second nozzle for injecting the blocking gas to the inner wall of the process chamber or the adjacent region of the support unit,
A second groove is formed in the upper center region of the support plate,
And a lower end of the nozzle unit is inserted into the second groove so that the lower end of the nozzle unit is spaced apart from the bottom surface of the second groove. The method of claim 1,
Substrate processing apparatus, characterized in that a plurality of the first nozzle is provided in the vertical direction. In the nozzle unit:
The nozzles have a cylindrical nozzle body disposed along the circumferential direction;
The nozzles
First nozzles for spraying a process gas in a horizontal direction; And
Second nozzles positioned at the top or bottom of the first nozzles and spraying the blocking gas in a horizontal direction parallel to the process gas;
The second nozzles are divided into a first group located at an upper end of the first nozzle and a second group located at a lower end of the first nozzle,
The second nozzles belonging to the same group are provided along the circumferential direction at the same height of the nozzle body,
The second nozzles belonging to the first group are provided to inject a blocking gas into an area adjacent to an upper wall of a processing chamber in which the nozzle unit is installed.
And the second nozzles belonging to the second group are provided to spray the blocking gas into an area adjacent to the support plate on which the substrates are placed. delete delete 11. The method of claim 10,
The nozzle body is
A first inner tube into which the blocking gas is introduced;
A second inner tube surrounding the first inner tube and into which a process gas is introduced;
Surrounding the second inner tube, wherein the cooling fluid for cooling the process gas in the second inner tube flows;
The first nozzles are provided to inject the process gas in the second inner tube to the outside of the outer tube,
And the second nozzles are provided so as to spray the blocking gas in the first inner tube to the outside of the outer tube. 11. The method of claim 10,
The nozzle body is
An inner tube into which a process gas is introduced;
Surrounding the inner tube and including an exterior through which a cooling fluid for cooling the process gas in the inner tube flows;
The first nozzles are provided to inject the process gas in the inner tube to the outside of the outer tube,
And the second nozzles are provided at an outer side of an upper end of the outer side and a lower end of the outer side. In the nozzle unit:
The nozzles have a cylindrical nozzle body disposed along the circumferential direction;
The nozzles
First nozzles for spraying a process gas in a horizontal direction; And
A second nozzle positioned at an upper end or a lower end of the first nozzles and spraying a blocking gas in a horizontal direction parallel to the process gas;
The nozzle body is
An inner tube into which a process gas is introduced;
Surrounding the inner tube and including an exterior through which a cooling fluid for cooling the process gas in the inner tube flows;
The first nozzles are provided to inject the process gas in the inner tube to the outside of the outer tube,
The second nozzles are formed in the circumferential direction on the inner side of the outer surface, the nozzle unit including an annular tube through which the blocking gas flows and injection holes formed in the outer surface to be connected to the annular tube. 11. The method of claim 10,
The nozzle unit, characterized in that a plurality of the first nozzle is provided in the vertical direction. In the substrate processing method using the apparatus of claim 1:
Loading a substrate into a process chamber;
Heating the substrate; And
Injecting a process gas onto the substrate;
And spraying a blocking gas such that the process gas is not deposited on an inner wall of the process chamber or a support plate on which the substrate is seated in the process gas is injected into the substrate. 18. The method of claim 17,
The blocking gas is
A substrate processing method which is sprayed before or after the process gas is injected or simultaneously with the process gas. 18. The method of claim 17,
The substrate is mounted in a plurality in the circumferential direction in the edge region of the support plate,
The process gas
Radially sprayed through the first nozzles of the nozzle unit disposed above the processing chamber corresponding to the center of the support plate;
The blocking gas is
And spraying in a horizontal direction between the first nozzles and an upper wall of the processing chamber or between the first nozzle and the support plate through second nozzles. 20. The method of claim 19,
And the process gas is sprayed through the first nozzles after being cooled by a cooling fluid. 20. The method of claim 19,
And the blocking gas is injected through the second nozzles after being cooled by a cooling fluid. The method of claim 19,
The support plate rotates about its own center axis,
And each of the plurality of substrates rotates around a magnetic center axis.

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