KR102026206B1 - Deposition apparatus - Google Patents

Deposition apparatus Download PDF

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Publication number
KR102026206B1
KR102026206B1 KR1020110142881A KR20110142881A KR102026206B1 KR 102026206 B1 KR102026206 B1 KR 102026206B1 KR 1020110142881 A KR1020110142881 A KR 1020110142881A KR 20110142881 A KR20110142881 A KR 20110142881A KR 102026206 B1 KR102026206 B1 KR 102026206B1
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KR
South Korea
Prior art keywords
reaction gas
wafer
chamber
gas injection
silicon carbide
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Application number
KR1020110142881A
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Korean (ko)
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KR20130074704A (en
Inventor
강석민
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엘지이노텍 주식회사
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Priority to KR1020110142881A priority Critical patent/KR102026206B1/en
Publication of KR20130074704A publication Critical patent/KR20130074704A/en
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Publication of KR102026206B1 publication Critical patent/KR102026206B1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically

Abstract

Silicon carbide deposition apparatus according to the embodiment, the chamber; A holder part located in the chamber and supporting the wafer; A reaction gas supply line for supplying a reaction gas into the chamber; And a reaction gas injection line connected to the reaction gas supply line and injecting a reaction gas to the wafer.

Description

Deposition apparatus {DEPOSITION APPARATUS}

The present disclosure relates to a silicon carbide deposition apparatus.

In general, chemical vapor deposition (CVD) is widely used in the art of forming various thin films on a substrate or a wafer. The chemical vapor deposition method is a deposition technique involving a chemical reaction, and forms a semiconductor thin film, an insulating film, or the like on the wafer surface by using a chemical reaction of a source material.

Such chemical vapor deposition methods and deposition apparatuses have recently attracted attention as a very important technology among thin film formation technologies due to miniaturization of semiconductor devices, development of high efficiency, high power LEDs, and the like. Currently, it is used to deposit various thin films such as silicon film, oxide film, silicon nitride film or silicon oxynitride film, tungsten film and the like on a wafer.

However, since the process of forming the thin film on the substrate or the wafer is performed at a high temperature of 1500 ° C. or more, a very long time may be required in the process of heating and cooling the deposition apparatus. Accordingly, it takes a time of several hours to perform one thin film process, and thus there is a problem that the process efficiency is lowered.

In addition, there is a problem that the reaction gas is not uniformly transferred on the wafer, and thus a uniform thin film is not formed on the wafer.

Accordingly, in the deposition apparatus, in order to increase the efficiency of the thin film process, there is a need for a deposition apparatus capable of depositing epi layers on a plurality of wafers in a single process and a deposition apparatus capable of depositing a uniform thin film.

Embodiments provide a deposition apparatus capable of forming a thin film of uniform thickness and simultaneously depositing a silicon carbide epitaxial layer on a plurality of wafers in one process.

Silicon carbide deposition apparatus according to the embodiment, the chamber; A holder part located in the chamber and supporting the wafer; A reaction gas supply line for supplying a reaction gas into the chamber; And a reaction gas injection line connected to the reaction gas supply line and injecting a reaction gas to the wafer.

The silicon carbide deposition apparatus according to the embodiment rotates a holder portion capable of supporting a plurality of wafers, and simultaneously sprays the reaction gas on each wafer by using a reaction gas supply line and a reaction gas injection line on the wafer. A silicon carbide epi layer can be deposited on the wafer. That is, the reaction gas may be uniformly sprayed on the wafer by using a reaction gas spray line simultaneously with the rotation of the wafer by the rotation of the holder part.

Accordingly, in the silicon carbide deposition apparatus according to the embodiment, since a uniform reaction gas is injected onto the wafer, a thin film having a uniform thickness may be formed on the wafer. In particular, the deposition apparatus according to the embodiment may uniformly form a silicon carbide epitaxial layer on the silicon carbide wafer.

In addition, in the silicon carbide epitaxial growth apparatus according to the embodiment, since the holder supports the plurality of wafer holders, the silicon carbide epitaxial layer may be simultaneously formed on the plurality of wafers in one process, thereby improving process efficiency.

That is, the silicon carbide deposition apparatus according to the embodiment can form the silicon carbide epitaxial layers on a plurality of wafers at once and simultaneously form the silicon carbide epitaxial layers on the wafers, thereby improving the process efficiency. It is possible to produce high quality silicon carbide epitaxial wafers.

1 is a view showing a silicon carbide deposition apparatus according to an embodiment.
FIG. 2 is a view showing that a reaction gas is injected by a reaction gas jet injector on a wafer according to an embodiment.

In the description of embodiments, each layer, region, pattern, or structure may be “on” or “under” the substrate, each layer, region, pad, or pattern. Substrate formed in ”includes all formed directly or through another layer. Criteria for the top / bottom or bottom / bottom of each layer are described with reference to the drawings.

In the drawings, the thickness or size of each layer (film), region, pattern, or structure may be modified for clarity and convenience of description, and thus do not necessarily reflect the actual size.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic diagram illustrating a silicon carbide deposition apparatus according to an embodiment.

Referring to FIG. 1, a silicon carbide deposition apparatus according to an embodiment includes a chamber 100, a holder part 200, a heating member 300, a reaction gas supply line 410, and a reaction gas injection line 420. do.

The chamber 100 may have a cylindrical tube shape. Alternatively, the chamber 100 may have a rectangular box shape. The chamber 100 may accommodate the holder part 200, the reaction gas supply line 410, and the reaction gas injection line 420. In addition, although not shown in the drawings, one side of the chamber 100 may be further provided with a gas supply for introducing a precursor and the gas discharge for discharging the gas.

In addition, both ends of the chamber 100 are hermetically sealed, and the chamber 100 may prevent external gas inflow and maintain a degree of vacuum. The chamber 100 may include quartz having high mechanical strength and excellent chemical durability. In addition, the chamber 100 has improved heat resistance.

In addition, a heat insulating part may be further provided in the chamber 100. The heat insulating part may perform a function of preserving heat in the chamber 100. Examples of the material used as the heat insulating part include nitride ceramics, carbide ceramics or graphite.

The holder part 200 is located in the chamber 100 and supports the wafer. One or more wafers may be supported by the holder part 200. That is, the holder part 200 may be a wafer holder. The holder part 200 may rotate. Although not shown, the holder 200 may be rotated in a clockwise or counterclockwise direction by using a mechanical force using a power unit located outside the chamber. Preferably, the holder 200 may rotate at a speed of 5rpm to 100rpm.

The holder part 200 may accommodate the reaction gas supply line 410 and the reaction gas injection line 420. Preferably, the reaction gas injection line 420 may be a plurality. More preferably, the number of wafers and the number of reactant gas injection lines 420 may be the same.

The holder part 200, the reaction gas supply line 410, and the reaction gas injection line 420 will be described in more detail later with reference to FIGS. 2 and 3.

The heating member 300 may be located outside the chamber 100 or between the chamber 100 and the holder part 200.

The heating member 300 may include an induction coil. When the heating member 300 is disposed outside the chamber 100, the induction coil may surround the outer circumferential surface of the chamber 100. The induction coil may induce heat generation of the susceptor 200 through electromagnetic induction. In addition, although not shown in the drawing, the heating member 300 may be located inside the chamber 100, that is, between the chamber 100 and the holder 200, and may include a resistive heating element. The holder 200 may be self-heating by the resistance heating member.

The temperature inside the chamber 100 is heated to a temperature of 1400 ° C to 1700 ° C by the heating member. Accordingly, the reaction gas supplied to the chamber 100 and the holder 200 is ionized to be decomposed into radicals, and react with the wafer to form an epitaxial layer on the wafer. Preferably, the wafer comprises a silicon carbide wafer and the epi layer comprises a silicon carbide epi layer.

Hereinafter, the holder 200, the reaction gas supply line 410, and the reaction gas injection line 420 according to the embodiment will be described in more detail with reference to FIGS. 1 and 2.

FIG. 2 is a view showing that a reaction gas is injected by a reaction gas jet injector on a wafer according to an embodiment.

Referring to FIG. 2, a reaction gas supply line 410 is connected to the holder 200, and a reaction gas injection line 420 is injected into the reaction gas supply line 410 to inject the reaction gas onto the wafer. This is connected. That is, the holder part may support a plurality of wafers, and the reaction gas injection line 420 is connected to the reaction gas supply line 410 by the number of wafers supported by the holder part.

The reaction gas supply line 410 and the reaction gas injection line 420 may supply the reaction gas onto the wafer. The reaction gas may include silane (SiH 4 ) and ethylene (C 2 H 4 ) or silane and ethylene (C 3 H 8 ). However, the embodiment is not limited thereto, and the reaction gas may include various reaction gases including carbon and silicon.

The reaction gas supply line 410 extends in the same direction as the holder 200 extends. In addition, the reaction gas injection line 420 extends in a direction perpendicular to the direction in which the holder part 200 extends. That is, the reaction gas injection line 420 is connected in the vertical direction at regular intervals to the reaction gas supply line 410. Preferably, the reactant gas injection line 420 is connected to the portion of the wafer where the epi layer is deposited on the wafer.

A plurality of injection holes 430 through which the reaction gas is injected may be formed in the reaction gas injection line 420. That is, the reaction gas is injected onto the wafer through the injection hole 430. That is, as shown in Figs. 1 and 2, the reaction gas is injected onto the wafer in the direction of the arrow.

The length of the reaction gas injection line 420 may be equal to or greater than the radius length of the wafer. When the length of the reaction gas injection line 420 is smaller than the radius of the wafer, the reaction gas may not be uniformly supplied onto the wafer.

The holder part 200 may rotate. Preferably, the holder 200 may be rotated at a speed of 5 rpm to 100 rpm. When the rotational speed is less than 5 rpm, the silicon carbide deposition process may be slowed down, and when the rotational speed exceeds 100 rpm, the reaction gas injected from the reaction gas injection line 420 may have the holder 200. Sprayed to the inner wall of the may not be uniformly sprayed on the wafer.

The reaction gas supplied to the holder 200 by the rotation of the holder 200 may be uniformly supplied onto the wafer.

Referring to FIG. 3, as the holder part 200 rotates in one direction, the wafer supported by the holder part 200 also rotates in the same direction. In addition, the reaction gas injection line 420 is positioned on the wafer, and the reaction gas is injected onto the wafer through the injection hole 430 formed in the reaction gas injection line 420. Simultaneously with the injection of the reaction gas, since the holder part, that is, the wafer is rotated, the reaction gas may be uniformly injected onto the wafer. Accordingly, a high quality silicon carbide epitaxial wafer having a uniform concentration can be manufactured on the wafer.

The silicon carbide deposition apparatus according to the embodiment rotates a holder portion capable of supporting a plurality of wafers, and simultaneously sprays the reaction gas on each wafer by using a reaction gas supply line and a reaction gas injection line on the wafer. A silicon carbide epi layer can be deposited on the wafer. That is, the reaction gas may be uniformly sprayed on the wafer by using a reaction gas spray line simultaneously with the rotation of the wafer by the rotation of the holder part.

Accordingly, in the silicon carbide deposition apparatus according to the embodiment, since a uniform reaction gas is injected onto the wafer, a thin film having a uniform thickness may be formed on the wafer. In particular, the deposition apparatus according to the embodiment may uniformly form a silicon carbide epitaxial layer on the silicon carbide wafer.

In addition, in the silicon carbide epitaxial growth apparatus according to the embodiment, since the holder supports the plurality of wafer holders, the silicon carbide epitaxial layer may be simultaneously formed on the plurality of wafers in one process, thereby improving process efficiency.

That is, the silicon carbide deposition apparatus according to the embodiment can form the silicon carbide epitaxial layers on a plurality of wafers at once and simultaneously form the silicon carbide epitaxial layers on the wafers, thereby improving the process efficiency. It is possible to produce high quality silicon carbide epitaxial wafers.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. In addition, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, contents related to such combinations and modifications should be construed as being included in the scope of the present invention.

In addition, the above description has been made with reference to the embodiments, which are merely examples and are not intended to limit the present invention, and those skilled in the art to which the present invention pertains may be illustrated as above without departing from the essential characteristics of the present embodiments. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiments may be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

Claims (8)

chamber;
A holder part positioned in the chamber and supporting a plurality of wafers;
A heating member disposed outside the chamber and surrounding the outer circumferential surface of the chamber;
A reaction gas supply line disposed in the chamber and supplying a reaction gas into the chamber; And
A plurality of reaction gas injection lines disposed in the chamber, connected to the reaction gas supply line, and spraying a reaction gas onto the wafer;
The holder portion rotates clockwise or counterclockwise,
The number of wafers and the number of reactant gas injection lines are equal,
At least one of the reactive gas injection lines is disposed between the wafers,
One reaction gas injection line sprays the reaction gas only on one wafer,
The holder portion rotates at a speed of 5rpm to 100rpm,
The reaction gas injection lines extend in a direction perpendicular to the direction in which the holder portion extends,
The length of the reaction gas jet lines is equal to or greater than the radius length of the wafer,
Each reaction gas injection line extends along the center direction of the wafer,
Wherein each reactant gas injection line is disposed parallel to at least one line passing through the center of the wafer. delete delete The method of claim 1,
And the reactive gas injection lines include a plurality of injection holes for injecting the reaction gas. delete The method of claim 1,
And the reaction gas comprises carbon and silicon. delete The method of claim 1,
And the reactive gas supply line extends in a direction in which the holder portion extends.
KR1020110142881A 2011-12-26 2011-12-26 Deposition apparatus KR102026206B1 (en)

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KR101947485B1 (en) 2017-07-06 2019-02-13 김석진 Method for SiC Coating of Graphite Base Substrate

Citations (1)

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Publication number Priority date Publication date Assignee Title
KR100531555B1 (en) * 2002-02-14 2005-11-28 주성엔지니어링(주) Thin film deposition apparatus having more than one rotatable gas injector and thin film deposition method using the same

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Publication number Priority date Publication date Assignee Title
KR100347379B1 (en) * 1999-05-01 2002-08-07 주식회사 피케이엘 Atomic layer deposition apparatus for depositing multi substrate
US7261919B2 (en) * 2003-11-18 2007-08-28 Flx Micro, Inc. Silicon carbide and other films and method of deposition
KR101006583B1 (en) * 2008-07-28 2011-01-07 신웅철 Horizontal batch type ald

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Publication number Priority date Publication date Assignee Title
KR100531555B1 (en) * 2002-02-14 2005-11-28 주성엔지니어링(주) Thin film deposition apparatus having more than one rotatable gas injector and thin film deposition method using the same

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