KR20130074704A - Deposition apparatus - Google Patents
Deposition apparatus Download PDFInfo
- Publication number
- KR20130074704A KR20130074704A KR1020110142881A KR20110142881A KR20130074704A KR 20130074704 A KR20130074704 A KR 20130074704A KR 1020110142881 A KR1020110142881 A KR 1020110142881A KR 20110142881 A KR20110142881 A KR 20110142881A KR 20130074704 A KR20130074704 A KR 20130074704A
- Authority
- KR
- South Korea
- Prior art keywords
- reaction gas
- wafer
- chamber
- silicon carbide
- holder
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
Abstract
Silicon carbide deposition apparatus according to the embodiment, the chamber; A holder part located in the chamber and supporting the wafer; A reaction gas supply line for supplying a reaction gas into the chamber; And a reaction gas injection line connected to the reaction gas supply line and injecting a reaction gas to the wafer.
Description
The present disclosure relates to a silicon carbide deposition apparatus.
In general, chemical vapor deposition (CVD) is widely used in the art of forming various thin films on a substrate or a wafer. The chemical vapor deposition method is a deposition technique involving a chemical reaction, which uses a chemical reaction of a source material to form a semiconductor thin film, an insulating film, and the like on the wafer surface.
Such chemical vapor deposition methods and deposition apparatuses have recently attracted attention as a very important technology among thin film formation technologies due to miniaturization of semiconductor devices, development of high efficiency, high power LEDs, and the like. Currently, it is used to deposit various thin films such as silicon film, oxide film, silicon nitride film or silicon oxynitride film, tungsten film and the like on a wafer.
However, since the process of forming the thin film on the substrate or the wafer is performed at a high temperature of 1500 ° C. or more, a very long time may be required in the process of heating and cooling the deposition apparatus. Accordingly, it takes a time of several hours to perform one thin film process, and thus there is a problem that the process efficiency is lowered.
In addition, there is a problem that the reaction gas is not uniformly transferred on the wafer, and thus a uniform thin film is not formed on the wafer.
Accordingly, in the deposition apparatus, in order to increase the efficiency of the thin film process, there is a need for a deposition apparatus capable of depositing epi layers on a plurality of wafers in a single process and a deposition apparatus capable of depositing a uniform thin film.
Embodiments provide a deposition apparatus capable of forming a thin film of uniform thickness and simultaneously depositing a silicon carbide epitaxial layer on a plurality of wafers in one process.
Silicon carbide deposition apparatus according to the embodiment, the chamber; A holder part located in the chamber and supporting the wafer; A reaction gas supply line for supplying a reaction gas into the chamber; And a reaction gas injection line connected to the reaction gas supply line and injecting a reaction gas to the wafer.
The silicon carbide deposition apparatus according to the embodiment rotates a holder portion capable of supporting a plurality of wafers, and simultaneously sprays the reaction gas on each wafer by using a reaction gas supply line and a reaction gas injection line on the wafer. A silicon carbide epi layer can be deposited on the wafer. That is, the reaction gas may be uniformly sprayed on the wafer by using a reaction gas spray line simultaneously with the rotation of the wafer by the rotation of the holder part.
Accordingly, in the silicon carbide deposition apparatus according to the embodiment, since a uniform reaction gas is injected onto the wafer, a thin film having a uniform thickness may be formed on the wafer. In particular, the deposition apparatus according to the embodiment may uniformly form a silicon carbide epitaxial layer on the silicon carbide wafer.
In addition, in the silicon carbide epitaxial growth apparatus according to the embodiment, since the holder supports the plurality of wafer holders, the silicon carbide epitaxial layer may be simultaneously formed on the plurality of wafers in one process, thereby improving process efficiency.
That is, the silicon carbide deposition apparatus according to the embodiment can form the silicon carbide epitaxial layers on a plurality of wafers at once and simultaneously form the silicon carbide epitaxial layers on the wafers, thereby improving the process efficiency. It is possible to produce high quality silicon carbide epitaxial wafers.
1 is a view showing a silicon carbide deposition apparatus according to an embodiment.
FIG. 2 is a view showing that a reaction gas is injected by a reaction gas jet injector on a wafer according to an embodiment.
In the description of embodiments, each layer, region, pattern, or structure may be “on” or “under” the substrate, each layer, region, pad, or pattern. Substrate formed in ”includes all formed directly or through another layer. Criteria for the top / bottom or bottom / bottom of each layer will be described with reference to the drawings.
The thickness or the size of each layer (film), region, pattern or structure in the drawings may be modified for clarity and convenience of explanation, and thus does not entirely reflect the actual size.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
1 is a schematic diagram illustrating a silicon carbide deposition apparatus according to an embodiment.
Referring to FIG. 1, a silicon carbide deposition apparatus according to an embodiment includes a
The
In addition, both ends of the
In addition, a heat insulating part may be further provided in the
The
The
The
The
The
The temperature inside the
Hereinafter, the
FIG. 2 is a view showing that a reaction gas is injected by a reaction gas jet injector on a wafer according to an embodiment.
Referring to FIG. 2, a reaction
The reaction
The reaction
A plurality of injection holes 430 through which the reaction gas is injected may be formed in the reaction
The length of the reaction
The
The reaction gas supplied to the
Referring to FIG. 3, as the
The silicon carbide deposition apparatus according to the embodiment rotates a holder portion capable of supporting a plurality of wafers, and simultaneously sprays the reaction gas on each wafer by using a reaction gas supply line and a reaction gas injection line on the wafer. A silicon carbide epi layer can be deposited on the wafer. That is, the reaction gas may be uniformly sprayed on the wafer by using a reaction gas spray line simultaneously with the rotation of the wafer by the rotation of the holder part.
Accordingly, in the silicon carbide deposition apparatus according to the embodiment, since a uniform reaction gas is injected onto the wafer, a thin film having a uniform thickness may be formed on the wafer. In particular, the deposition apparatus according to the embodiment may uniformly form a silicon carbide epitaxial layer on the silicon carbide wafer.
In addition, in the silicon carbide epitaxial growth apparatus according to the embodiment, since the holder supports the plurality of wafer holders, the silicon carbide epitaxial layer may be simultaneously formed on the plurality of wafers in one process, thereby improving process efficiency.
That is, the silicon carbide deposition apparatus according to the embodiment can form the silicon carbide epitaxial layers on a plurality of wafers at once and simultaneously form the silicon carbide epitaxial layers on the wafers, thereby improving the process efficiency. It is possible to produce high quality silicon carbide epitaxial wafers.
The features, structures, effects and the like described in the foregoing embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified in other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.
While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limiting the scope of the present invention. It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments may be modified. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.
Claims (8)
A holder part located in the chamber and supporting the wafer;
A reaction gas supply line for supplying a reaction gas into the chamber;
And a reactive gas injection line connected to the reactive gas supply line and injecting a reactive gas to the wafer.
The silicon carbide deposition apparatus that the holder portion rotates.
The holder is silicon carbide deposition apparatus that rotates at a speed of 5rpm to 100rpm.
The reactive gas injection line comprises a plurality of injection holes for injecting the reaction gas.
The reaction gas injection line extends in a direction perpendicular to the direction in which the holder portion extends,
And the reaction gas jet line has a length equal to or greater than a radius length of the wafer.
And the reaction gas comprises carbon and silicon.
And a plurality of wafers supported by the holder portion.
And the reactive gas supply line extends in a direction in which the holder portion extends.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110142881A KR102026206B1 (en) | 2011-12-26 | 2011-12-26 | Deposition apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110142881A KR102026206B1 (en) | 2011-12-26 | 2011-12-26 | Deposition apparatus |
Publications (2)
Publication Number | Publication Date |
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KR20130074704A true KR20130074704A (en) | 2013-07-04 |
KR102026206B1 KR102026206B1 (en) | 2019-09-27 |
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Family Applications (1)
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KR1020110142881A KR102026206B1 (en) | 2011-12-26 | 2011-12-26 | Deposition apparatus |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190005324A (en) | 2017-07-06 | 2019-01-16 | 김석진 | Method for SiC Coating of Graphite Base Substrate |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000017688A (en) * | 1999-05-01 | 2000-04-06 | 정수홍 | Atomic layer deposition apparatus for depositing multi substrate |
KR20030068366A (en) * | 2002-02-14 | 2003-08-21 | 주성엔지니어링(주) | Thin film deposition apparatus having more than one rotatable gas injector and thin film deposition method using the same |
KR20060123343A (en) * | 2003-11-18 | 2006-12-01 | 케이스 웨스턴 리저브 유니버시티 | Method for depositing silicon carbide and ceramic films |
KR20100012115A (en) * | 2008-07-28 | 2010-02-08 | 신웅철 | Horizontal batch type ald |
-
2011
- 2011-12-26 KR KR1020110142881A patent/KR102026206B1/en active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20000017688A (en) * | 1999-05-01 | 2000-04-06 | 정수홍 | Atomic layer deposition apparatus for depositing multi substrate |
KR20030068366A (en) * | 2002-02-14 | 2003-08-21 | 주성엔지니어링(주) | Thin film deposition apparatus having more than one rotatable gas injector and thin film deposition method using the same |
KR100531555B1 (en) * | 2002-02-14 | 2005-11-28 | 주성엔지니어링(주) | Thin film deposition apparatus having more than one rotatable gas injector and thin film deposition method using the same |
KR20060123343A (en) * | 2003-11-18 | 2006-12-01 | 케이스 웨스턴 리저브 유니버시티 | Method for depositing silicon carbide and ceramic films |
KR20100012115A (en) * | 2008-07-28 | 2010-02-08 | 신웅철 | Horizontal batch type ald |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190005324A (en) | 2017-07-06 | 2019-01-16 | 김석진 | Method for SiC Coating of Graphite Base Substrate |
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KR102026206B1 (en) | 2019-09-27 |
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