JPS5717495A - Growing apparatus for single crystal - Google Patents

Growing apparatus for single crystal

Info

Publication number
JPS5717495A
JPS5717495A JP9238880A JP9238880A JPS5717495A JP S5717495 A JPS5717495 A JP S5717495A JP 9238880 A JP9238880 A JP 9238880A JP 9238880 A JP9238880 A JP 9238880A JP S5717495 A JPS5717495 A JP S5717495A
Authority
JP
Japan
Prior art keywords
vessel
insulator
crucible
outside
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9238880A
Other languages
Japanese (ja)
Other versions
JPS613315B2 (en
Inventor
Hiroshi Hirata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP9238880A priority Critical patent/JPS5717495A/en
Publication of JPS5717495A publication Critical patent/JPS5717495A/en
Publication of JPS613315B2 publication Critical patent/JPS613315B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To prevent the turbulence of an inert gas introduced into a vessel and a gaseous reaction product by extending a shielding body between a heat insulator enclosing a heating element from the outside and the vessel and exhausting the gases from the vessel through the space between the insulator and a crucible.
CONSTITUTION: This growing apparatus for a single crystal is manufactured by installing a crucible 3 forming a melt 2, a heating element 6 enclosing the crucible 3 from the outside and a heat insulator 8 enclosing the element 6 from the outside in a vessel 1. An inert gas 10 is introduced from the outside of the vessel 1, and a single crystal 13 is pulled up from the melt 2 while leading the gas 10 and a gaseous reaction product 11 generated in the crucible 3 out of the vessel 1 from the bottom. A shielding body 17 is extended between the insulator 8 and the vessel 1, an opening 18 is made in the bottom 7b of the insulator 8, and the gas 10 and the product 11 are exhausted from the vessel 1 through the space between the insulator 8 and the crucible 3 like the arrows.
COPYRIGHT: (C)1982,JPO&Japio
JP9238880A 1980-07-07 1980-07-07 Growing apparatus for single crystal Granted JPS5717495A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9238880A JPS5717495A (en) 1980-07-07 1980-07-07 Growing apparatus for single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9238880A JPS5717495A (en) 1980-07-07 1980-07-07 Growing apparatus for single crystal

Publications (2)

Publication Number Publication Date
JPS5717495A true JPS5717495A (en) 1982-01-29
JPS613315B2 JPS613315B2 (en) 1986-01-31

Family

ID=14053032

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9238880A Granted JPS5717495A (en) 1980-07-07 1980-07-07 Growing apparatus for single crystal

Country Status (1)

Country Link
JP (1) JPS5717495A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193489A (en) * 1987-10-01 1989-04-12 Kyushu Electron Metal Co Ltd Production of single crystal for semiconductor
JP2007191388A (en) * 2006-01-19 2007-08-02 Siltronic Ag Device and method for manufacturing single crystal, single crystal and semiconductor disk

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919941A (en) * 1972-04-25 1974-02-21
JPS5239787A (en) * 1975-09-20 1977-03-28 Bayer Ag Condensate and method of making it shukugoseiseibutsu oyobi sonoseizoho
JPS52155744U (en) * 1976-05-21 1977-11-26
JPS5467747U (en) * 1978-09-14 1979-05-14
JPS54150378A (en) * 1978-05-17 1979-11-26 Wacker Chemitronic Apparatus and method for pulling up highly pure semiconductor rod from melt

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4919941A (en) * 1972-04-25 1974-02-21
JPS5239787A (en) * 1975-09-20 1977-03-28 Bayer Ag Condensate and method of making it shukugoseiseibutsu oyobi sonoseizoho
JPS52155744U (en) * 1976-05-21 1977-11-26
JPS54150378A (en) * 1978-05-17 1979-11-26 Wacker Chemitronic Apparatus and method for pulling up highly pure semiconductor rod from melt
JPS5467747U (en) * 1978-09-14 1979-05-14

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193489A (en) * 1987-10-01 1989-04-12 Kyushu Electron Metal Co Ltd Production of single crystal for semiconductor
JP2007191388A (en) * 2006-01-19 2007-08-02 Siltronic Ag Device and method for manufacturing single crystal, single crystal and semiconductor disk
JP4638886B2 (en) * 2006-01-19 2011-02-23 ジルトロニック アクチエンゲゼルシャフト Apparatus and method for producing a single crystal

Also Published As

Publication number Publication date
JPS613315B2 (en) 1986-01-31

Similar Documents

Publication Publication Date Title
IL69170A (en) Chemical vapor deposition apparatus
JPS5211176A (en) Activation gas reaction apparatus
MY133687A (en) Method and apparatus for producing a single crystal
JPS56100114A (en) Alpha-type silicon nitride of high purity and its manufacture
DE3463222D1 (en) Shielding apparatus for a pouring stream of liquid material
JPS5717495A (en) Growing apparatus for single crystal
JPS5772098A (en) Device for removing hydrogen gas from reactor container of atomic power plant
JPS53136004A (en) Thermal decompositin furnace for municipal wastes
JPS5467377A (en) Plasma processing apparatus
JPS51117977A (en) Gas heating method and arc plasma chemical reaction furnace carrying out the method
JPS55113695A (en) Single crystal growing device
JPS51136483A (en) Oxygen sensor
JPS55113694A (en) Single crystal growing device
ES8503309A1 (en) Process for producing metallic chlorides.
FR2312004A1 (en) High temp. laboratory furnace - using graphite heating elements in separate refractory tubes under protective gas
JPS539209A (en) High frequency heating coil of floating zone purifying apparatus
JPS5438491A (en) Heat remover
JPS5571693A (en) Production of single crystal
JPS52155969A (en) Reduced pressure heat treatment furnace of semiconductor wafers
JPS5678404A (en) High-purity purification of gas for furnace air atmosphere and its device
JPS5632721A (en) Heat treating device
GB2006344A (en) >A Method for the Production of a High Vacuum in a Container
JPS5391667A (en) Plasma cvd device
JPS5382263A (en) Epitaxial growth method
JPS5632318A (en) Manufacture of silicon