JPS539209A - High frequency heating coil of floating zone purifying apparatus - Google Patents

High frequency heating coil of floating zone purifying apparatus

Info

Publication number
JPS539209A
JPS539209A JP8309376A JP8309376A JPS539209A JP S539209 A JPS539209 A JP S539209A JP 8309376 A JP8309376 A JP 8309376A JP 8309376 A JP8309376 A JP 8309376A JP S539209 A JPS539209 A JP S539209A
Authority
JP
Japan
Prior art keywords
floating zone
high frequency
heating coil
frequency heating
purifying apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8309376A
Other languages
Japanese (ja)
Inventor
Asaji Kawanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8309376A priority Critical patent/JPS539209A/en
Publication of JPS539209A publication Critical patent/JPS539209A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To stabilize and to widely improve the non-transitionizing rate of single crystal Si, by using induction main coil for refining heating and subsidiary coil for remining heat effect or slow cooling effect at the same time, on occasion of producing the semiconductor of non-transition Si single crystal from a high purity polycrystalline Si with floating zone refining process.
COPYRIGHT: (C)1978,JPO&Japio
JP8309376A 1976-07-13 1976-07-13 High frequency heating coil of floating zone purifying apparatus Pending JPS539209A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8309376A JPS539209A (en) 1976-07-13 1976-07-13 High frequency heating coil of floating zone purifying apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8309376A JPS539209A (en) 1976-07-13 1976-07-13 High frequency heating coil of floating zone purifying apparatus

Publications (1)

Publication Number Publication Date
JPS539209A true JPS539209A (en) 1978-01-27

Family

ID=13792555

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8309376A Pending JPS539209A (en) 1976-07-13 1976-07-13 High frequency heating coil of floating zone purifying apparatus

Country Status (1)

Country Link
JP (1) JPS539209A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5498734A (en) * 1978-01-17 1979-08-03 Kawasaki Kasei Chem Ltd Method of separation of naphthoquinone and phthalic acid
JPS5511520A (en) * 1978-07-11 1980-01-26 Kawasaki Kasei Chem Ltd Separation of naphthoquinone from phthalic acid
JPS59130830A (en) * 1983-01-18 1984-07-27 Nippon Jiyouriyuu Kogyo Kk Collection of quinones
JPH0524966A (en) * 1991-07-16 1993-02-02 Shin Etsu Handotai Co Ltd Production of semiconductor silicon single crystal by fz method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5498734A (en) * 1978-01-17 1979-08-03 Kawasaki Kasei Chem Ltd Method of separation of naphthoquinone and phthalic acid
JPS591250B2 (en) * 1978-01-17 1984-01-11 川崎化成工業株式会社 Separation method of naphthoquinone and phthalic acid
JPS5511520A (en) * 1978-07-11 1980-01-26 Kawasaki Kasei Chem Ltd Separation of naphthoquinone from phthalic acid
JPS591251B2 (en) * 1978-07-11 1984-01-11 川崎化成工業株式会社 How to separate naphthoquinone and phthalic acid
JPS59130830A (en) * 1983-01-18 1984-07-27 Nippon Jiyouriyuu Kogyo Kk Collection of quinones
JPH047335B2 (en) * 1983-01-18 1992-02-10 Nippon Joryu Kogyo Kk
JPH0524966A (en) * 1991-07-16 1993-02-02 Shin Etsu Handotai Co Ltd Production of semiconductor silicon single crystal by fz method

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