JPS55166927A - Dry etching apparatus - Google Patents

Dry etching apparatus

Info

Publication number
JPS55166927A
JPS55166927A JP7529579A JP7529579A JPS55166927A JP S55166927 A JPS55166927 A JP S55166927A JP 7529579 A JP7529579 A JP 7529579A JP 7529579 A JP7529579 A JP 7529579A JP S55166927 A JPS55166927 A JP S55166927A
Authority
JP
Japan
Prior art keywords
electrode
upper electrode
processed
products
vacuum chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7529579A
Other languages
Japanese (ja)
Other versions
JPS5719568B2 (en
Inventor
Sanji Kawashiro
Shinichi Suzuki
Hisashi Suemitsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP7529579A priority Critical patent/JPS55166927A/en
Publication of JPS55166927A publication Critical patent/JPS55166927A/en
Publication of JPS5719568B2 publication Critical patent/JPS5719568B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To make uniform etched region available by a method wherein products to be processed is fastened on one electrode which is faced by each other in a vacuum chamber which has an evacuation tap and another electrode which is provided with gas ejecting holes is driven to rotate with an inclined angle. CONSTITUTION:An upper electrode 2 and a lower electrode 3 are provided within a vacuum chamber 1 which is evacuated from a evacuation tap 7, and high frequency voltage or d.c. voltage is applied between two electrodes 2, 3. And products 5 to be processed such as semiconductor wafers is retained on the lower electrode 3, and ejecting holes 4 which eject etching gas such as Ar or Fr are provided on the lower surface of the upper electrode 2. The upper electrode 2 is disposed to be inclined refering to the lower electrode 3 and can be rotated around a central axis 8. By this method distance between two electrodes varies at every succeeding minute by dependence on the position of the electrode, and by strength of electric field and gas supply varying periodically, uniform etching is performed with proper rotational speed selected.
JP7529579A 1979-06-15 1979-06-15 Dry etching apparatus Granted JPS55166927A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7529579A JPS55166927A (en) 1979-06-15 1979-06-15 Dry etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7529579A JPS55166927A (en) 1979-06-15 1979-06-15 Dry etching apparatus

Publications (2)

Publication Number Publication Date
JPS55166927A true JPS55166927A (en) 1980-12-26
JPS5719568B2 JPS5719568B2 (en) 1982-04-23

Family

ID=13572103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7529579A Granted JPS55166927A (en) 1979-06-15 1979-06-15 Dry etching apparatus

Country Status (1)

Country Link
JP (1) JPS55166927A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4718976A (en) * 1982-03-31 1988-01-12 Fujitsu Limited Process and apparatus for plasma treatment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4718976A (en) * 1982-03-31 1988-01-12 Fujitsu Limited Process and apparatus for plasma treatment

Also Published As

Publication number Publication date
JPS5719568B2 (en) 1982-04-23

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