JPS5610932A - Plasma treating apparatus - Google Patents

Plasma treating apparatus

Info

Publication number
JPS5610932A
JPS5610932A JP8762079A JP8762079A JPS5610932A JP S5610932 A JPS5610932 A JP S5610932A JP 8762079 A JP8762079 A JP 8762079A JP 8762079 A JP8762079 A JP 8762079A JP S5610932 A JPS5610932 A JP S5610932A
Authority
JP
Japan
Prior art keywords
electrode
gas
electrodes
plasma
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8762079A
Other languages
Japanese (ja)
Inventor
Katsuhiro Hirata
Kuniaki Miyake
Hisao Yakushiji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8762079A priority Critical patent/JPS5610932A/en
Publication of JPS5610932A publication Critical patent/JPS5610932A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Abstract

PURPOSE:To equalize a gas flow in a plasma treating apparatus by extending the end edge of one electrode to the periphery of the other electrode to produce a barrier of predetermined gap when inserting a substance to be treated between upper and lower electrodes and treating it with plasma while flowing reaction gas thereto. CONSTITUTION:An airtight chamber 5 is placed on a substrate 1 having an exhaust gas hole 6 at the center, and a lower electrode 2 is disposed in the chamber 5 while supporting it by a support 3. An upper electrode 4 having a number of gas injection holes 9 for injecting gas toward a lower surface is provided at predetermined gap oppositely to the electrode 2. Gas is supplied from a reaction gas supply hole 7 penetrated through the substrate 1 between the electrodes 2 and 4 to treat a number of semiconductor wafer 8 with plasma between the electrodes. In this configuration a barrier 10 having a conductor 10a at the root and an insulator 10b at the end is mounted at the peripheral edge of the lower electrode 2, and is erected at a gap on the peripheral edge of the upper electrode 2. In this manner the gas flow between the electrodes becomes uniform to enable uniform treatment of the wafers 8 on the periphery.
JP8762079A 1979-07-09 1979-07-09 Plasma treating apparatus Pending JPS5610932A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8762079A JPS5610932A (en) 1979-07-09 1979-07-09 Plasma treating apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8762079A JPS5610932A (en) 1979-07-09 1979-07-09 Plasma treating apparatus

Publications (1)

Publication Number Publication Date
JPS5610932A true JPS5610932A (en) 1981-02-03

Family

ID=13920008

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8762079A Pending JPS5610932A (en) 1979-07-09 1979-07-09 Plasma treating apparatus

Country Status (1)

Country Link
JP (1) JPS5610932A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57156034A (en) * 1981-02-13 1982-09-27 Ramu Research Corp Plasma treating chamber
JPS5811240U (en) * 1981-07-14 1983-01-25 株式会社島津製作所 Plasma CVD equipment
JPS59143328A (en) * 1983-02-03 1984-08-16 Anelva Corp Dry etching device
JPS603479A (en) * 1983-05-27 1985-01-09 ル−カス・インダストリ−ズ・パブリツク・リミテツド・カンパニ− Start motor
JPS6012735A (en) * 1983-07-01 1985-01-23 Hitachi Ltd Etching device
JPS60115231A (en) * 1983-11-28 1985-06-21 Hitachi Ltd Etching method
JPS632325A (en) * 1986-06-20 1988-01-07 Fujitsu Ltd Reactive ion etching apparatus
JPS63136524A (en) * 1986-11-27 1988-06-08 Tokuda Seisakusho Ltd Dry etching apparatus
US5422139A (en) * 1990-04-12 1995-06-06 Balzers Aktiengesellschaft Method for a reactive surface treatment of a workpiece and a treatment chamber for practicing such method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5220760A (en) * 1975-08-11 1977-02-16 Toshiba Corp Colour picture tube
JPS5518400A (en) * 1978-07-27 1980-02-08 Eaton Corp Plasma etching device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5220760A (en) * 1975-08-11 1977-02-16 Toshiba Corp Colour picture tube
JPS5518400A (en) * 1978-07-27 1980-02-08 Eaton Corp Plasma etching device

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57156034A (en) * 1981-02-13 1982-09-27 Ramu Research Corp Plasma treating chamber
JPS6244971B2 (en) * 1981-02-13 1987-09-24 Ramu Risaachi Corp
JPS5811240U (en) * 1981-07-14 1983-01-25 株式会社島津製作所 Plasma CVD equipment
JPS59143328A (en) * 1983-02-03 1984-08-16 Anelva Corp Dry etching device
JPS603479A (en) * 1983-05-27 1985-01-09 ル−カス・インダストリ−ズ・パブリツク・リミテツド・カンパニ− Start motor
JPS6012735A (en) * 1983-07-01 1985-01-23 Hitachi Ltd Etching device
JPS60115231A (en) * 1983-11-28 1985-06-21 Hitachi Ltd Etching method
JPS632325A (en) * 1986-06-20 1988-01-07 Fujitsu Ltd Reactive ion etching apparatus
JPS63136524A (en) * 1986-11-27 1988-06-08 Tokuda Seisakusho Ltd Dry etching apparatus
US5422139A (en) * 1990-04-12 1995-06-06 Balzers Aktiengesellschaft Method for a reactive surface treatment of a workpiece and a treatment chamber for practicing such method

Similar Documents

Publication Publication Date Title
US4358686A (en) Plasma reaction device
KR970072182A (en) Plasma treatment method and apparatus
JPS5610932A (en) Plasma treating apparatus
KR860007717A (en) Plasma Etching Method and Apparatus
KR102139296B1 (en) Batch type substrate processing apparatus
US5087341A (en) Dry etching apparatus and method
JPH0423429A (en) Device and method for plasma processing of semiconductor device
JPS5676242A (en) Treating apparatus using gas plasma reaction
JPH088234A (en) Plasma treatment device
JPS62123721A (en) Treater
JPS57128940A (en) Heat treating method for substrate
JPH02268430A (en) Plasma processor
JPS6423537A (en) Plasma processing device
JPH02198138A (en) Electrode plate of parallel plate type dry etching apparatus
JPS5687331A (en) Reducing furnace for solder-treatment
KR950004756Y1 (en) Plasma generating apparatus
JPS5919326A (en) Plasma processor
JPS58176923A (en) Plasma cvd apparatus
JPS61166023A (en) Heat treatment method of semiconductor wafer
JPH02268429A (en) Plasma etching apparatus
JPS61245530A (en) Processor
JPS62280372A (en) Plasma vapor growth device
JPS5582438A (en) Plasma etching device
JPH02100322A (en) Plasma cvd device
JPH0745537A (en) Electrode for plasma cvd equipment and plasma cvd equipment