JPS61166023A - Heat treatment method of semiconductor wafer - Google Patents

Heat treatment method of semiconductor wafer

Info

Publication number
JPS61166023A
JPS61166023A JP647185A JP647185A JPS61166023A JP S61166023 A JPS61166023 A JP S61166023A JP 647185 A JP647185 A JP 647185A JP 647185 A JP647185 A JP 647185A JP S61166023 A JPS61166023 A JP S61166023A
Authority
JP
Japan
Prior art keywords
wafer
plate
heat treatment
hole
gas flow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP647185A
Other languages
Japanese (ja)
Inventor
Sakae Yokoyama
栄 横山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP647185A priority Critical patent/JPS61166023A/en
Publication of JPS61166023A publication Critical patent/JPS61166023A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities

Abstract

PURPOSE:To make it possible to control the gas flow in the upper part of the quartz tube, to make the gas flow in the lower part easy, and make the impurity diffusion and the thermal oxidation speed more uniform, by putting the plate having a hole in front of the surface of the semiconductor wafer to be treated against the atmospheric gas in order to guide the gas flow uniformly to the wafer surface in the process of heat treatment. CONSTITUTION:The wafer 3 is held between the plates 6 with a hole, and the diameter of the plate 6 is from 5mm to 10mm smaller than the internal diameter of the quartz tube 4. The hole 7 of the plate is in the shape of a fan whose arc diameter is larger than the external diameter of the wafer 3. In such a boat, the gas flows from the upper part and the hole of the plate to the lower part of the wafer 3 and collides against it. This gas flows along the wafer 3 and reaches the outer periphery where the gas flows along the tube 4 by the next plate. On the side of the quartz boat 1 in which the gas flows is apt to stagnate, it is repeated for the gas flow to collide with the next wafer through the plate with a hole.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は半導体装置の製造工程において行なう熱処理用
ボートに関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a boat for heat treatment carried out in the manufacturing process of semiconductor devices.

従来の技術 半導体素子全製造する場合に使うシリコンウェハは大口
径へと移行している。従来の熱処理用ボートは、第３図
に示すように、ボート１にウェハ設置用の溝２を付けて
おき、そこにウェハ３を並べる構造である。このときガ
スの流れはウェハ３と石英チューブ４との間のすき間６
全通って流れ、フェハ３０表面にはガスの流れが直接当
らない。BACKGROUND OF THE INVENTION The silicon wafers used to manufacture all semiconductor devices are moving to larger diameters. As shown in FIG. 3, a conventional heat treatment boat has a structure in which a boat 1 has grooves 2 for installing wafers, and wafers 3 are arranged in the grooves 2. At this time, the gas flow is directed through the gap 6 between the wafer 3 and the quartz tube 4.
The gas flow does not directly hit the surface of the Fefer 30.

発明が解決しようとする問題点 このためウェハ面内のキャリヤガスの流れは、ウェハ周
辺に多く中心は少なくなり、ウェハ表面の不純物の拡散
や酸化はやはり周辺で多くなり中心では少なくなる。Problems to be Solved by the Invention For this reason, the flow of carrier gas within the wafer plane is greater at the periphery of the wafer and less at the center, and the diffusion and oxidation of impurities on the wafer surface is also greater at the periphery and less at the center.

問題点を解決するだめの手段 本発明は、従来の問題点を解決するためウェハ表面にガ
スの流れが均一に当るように熱処理中、雰囲気ガスに対
して、被処理半導体ウェハの前面に孔あき板を配して、
熱処理をおこなう熱処理方法全提案するものである。Means for Solving the Problems In order to solve the problems of the conventional art, the present invention provides a method for forming holes on the front surface of the semiconductor wafer to be processed, which is connected to the atmospheric gas during heat treatment so that the gas flow uniformly hits the wafer surface. Arrange the boards,
This paper proposes all heat treatment methods for carrying out heat treatment.

作用 本発明は、雰囲気ガス流に対して、一定形状の孔の開い
奔石英板を熱処理金堂けるウェハの前方に備え、ウェハ
と交互に並へられるようにボートにウェハ設置用の溝を
備えることにより、孔の開いた板により、雰囲気ガスの
流れを変えることができる。この結果、石英管上部のガ
ス流を抑制し、下部のガス流を流れ易くして、不純物拡
散、熱酸化速度等をより均一に行なわせることが可能で
ある。Effect of the present invention is to provide a quartz plate with holes of a certain shape in front of the wafers to be placed in the heat treatment chamber against the atmospheric gas flow, and to provide grooves for placing the wafers in the boat so that they are arranged alternately with the wafers. This allows the flow of atmospheric gas to be changed using a plate with holes. As a result, it is possible to suppress the gas flow in the upper part of the quartz tube and to make the gas flow in the lower part easier to perform impurity diffusion, thermal oxidation rate, etc. more uniformly.

実施例 第１図は本発明の実施例における炉の中に入っている熱
処理用ボートの横継面図を示すものである。第２図に一
実施例として扇形の穴を有する石英板を示す。第１図に
おいて、ウェハ３は前後を穴のあいた板６にはさまれて
おり穴あき板６の外径は石英チューブ４の内径よ！ｌ１
６ミリから１０ミリ小さくできている。板の扇形の孔Ｔ
の大きさは円弧径を、拡散するウェハ３の外径より大き
くした形状である。Embodiment FIG. 1 shows a cross-sectional view of a heat treatment boat contained in a furnace in an embodiment of the present invention. FIG. 2 shows a quartz plate having fan-shaped holes as an example. In FIG. 1, a wafer 3 is sandwiched between two perforated plates 6 at the front and back, and the outer diameter of the perforated plate 6 is the same as the inner diameter of the quartz tube 4! l1
It is made 6mm to 10mm smaller. Sector-shaped hole T in the plate
The size of the wafer 3 is such that the arc diameter is larger than the outer diameter of the wafer 3 to be diffused.

ウェハ３と孔あき板６との間隔は１（１ｍとしだ。The distance between the wafer 3 and the perforated plate 6 is 1 m (1 m).

このように構成したボートでは、ガス流が上部および板
の穴よりガスがウェハ３の下方に当り、つづいてクエハ
３にそって外周に流れていく、外周に達したガスは次の
板によりチーープ４にそって流れ、特に、ガス流がよど
みがちな、石英ボート４側において、穴あき板全通して
次のウェハに当るということを次々に繰返していくもの
である。In a boat configured in this way, the gas flow hits the lower part of the wafer 3 through the holes in the upper part and the plate, and then flows along the wafer 3 to the outer periphery.When the gas reaches the outer periphery, it is quickly swept by the next plate. In particular, on the quartz boat 4 side where the gas flow tends to stagnate, the gas flows through the perforated plate completely and hits the next wafer, which is repeated one after another.

発明の効果 本発明によると、熱処理用ウェハの間に、扇形の穴を有
する石英ガラス基板を用いることにより、キャリヤガス
流がウェハ上面たけでなく、下面にも、よどみなく流れ
ることにより、熱処理等全均一に行なうことのできる熱
処理用拡散ボートを提供するものである。Effects of the Invention According to the present invention, by using a quartz glass substrate having fan-shaped holes between the wafers for heat treatment, the carrier gas flow not only over the upper surface of the wafer but also under the wafer without stagnation, allowing heat treatment, etc. The present invention provides a diffusion boat for heat treatment that can be carried out completely uniformly.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本発明の穴あき板を有する石英ボートの構成を
示す図、第２図は、熱処理用室あき板の平面図、第３図
は従来構造の石英ボートの斜視図である。 １・・・・・・石英ボート、２・・・・・・ウェハを置
く溝、３・・・・・・シリコンウェハ、４・・・・・・
石英チューブ、６・・・・・・すき間、６・・・・・・
孔あき板、７・・・・・・孔。FIG. 1 is a diagram showing the structure of a quartz boat having a perforated plate according to the present invention, FIG. 2 is a plan view of a perforated plate for heat treatment, and FIG. 3 is a perspective view of a quartz boat having a conventional structure. 1...Quartz boat, 2...Groove for placing wafer, 3...Silicon wafer, 4...
Quartz tube, 6... Gap, 6...
Perforated plate, 7... holes.

Claims (2)

【特許請求の範囲】[Claims] （１）半導体ウェハの熱処理工程において使用されるウ
ェハ設置用のボートで、熱処理雰囲気ガスの流れに対し
、前記被処理半導体ウェハの前方に孔あき板を配して熱
処理する半導体ウェハの熱処理方法。(1) A method for heat treatment of semiconductor wafers, in which a perforated plate is disposed in front of the semiconductor wafer to be processed against the flow of heat treatment atmosphere gas in a wafer installation boat used in the heat treatment process of semiconductor wafers. （２）孔あき板が下方に扇形開孔を有するものでなるこ
とを特徴とする特許請求の範囲第１項に記載の半導体ウ
ェハの熱処理方法。(2) The method for heat treating a semiconductor wafer according to claim 1, wherein the perforated plate has sector-shaped openings at the bottom.
JP647185A 1985-01-17 1985-01-17 Heat treatment method of semiconductor wafer Pending JPS61166023A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP647185A JPS61166023A (en) 1985-01-17 1985-01-17 Heat treatment method of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP647185A JPS61166023A (en) 1985-01-17 1985-01-17 Heat treatment method of semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS61166023A true JPS61166023A (en) 1986-07-26

Family

ID=11639367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP647185A Pending JPS61166023A (en) 1985-01-17 1985-01-17 Heat treatment method of semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS61166023A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0189738U (en) * 1987-12-04 1989-06-13
JPH06349738A (en) * 1993-06-08 1994-12-22 Nec Corp Vertical low-pressure cvd device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0189738U (en) * 1987-12-04 1989-06-13
JPH06349738A (en) * 1993-06-08 1994-12-22 Nec Corp Vertical low-pressure cvd device

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