JPH062948B2 - How to treat the object - Google Patents
How to treat the objectInfo
- Publication number
- JPH062948B2 JPH062948B2 JP61229059A JP22905986A JPH062948B2 JP H062948 B2 JPH062948 B2 JP H062948B2 JP 61229059 A JP61229059 A JP 61229059A JP 22905986 A JP22905986 A JP 22905986A JP H062948 B2 JPH062948 B2 JP H062948B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- processed
- semiconductor wafer
- film
- cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 ［発明の目的］ （産業上の利用分野） 本発明は、半導体ウエハ等の被処理基板にＣＶＤ膜を形
成する被処理体の処理方法に関する。Description: [Object of the Invention] (Field of Industrial Application) The present invention relates to a method for processing an object to be processed in which a CVD film is formed on a substrate such as a semiconductor wafer.
（従来の技術） 一般に、半導体ウエハ等の被処理基板の表面にＳｉ
Ｏ２、ＰＳＧ、ＢＳＧ等のＣＶＤ膜を形成するＣＶＤ装
置には、減圧ＣＶＤ装置、常圧ＣＶＤ装置、プラズマＣ
ＶＤ装置等の種々のＣＶＤ装置がある。(Prior Art) Generally, Si is formed on the surface of a substrate to be processed such as a semiconductor wafer.
As a CVD apparatus for forming a CVD film of O 2 , PSG, BSG, etc., a low pressure CVD apparatus, a normal pressure CVD apparatus, a plasma C
There are various CVD devices such as VD devices.
これらの従来のＣＶＤ装置では、常圧あるいは減圧され
た処理室内に半導体ウエハ等の被処理基板を多数配置
し、これらの被処理基板を加熱するとともに、処理室内
に例えばＳｉＨ４とＰＨ３とＯ２あるいはＳｉＨ４とＯ
２等の所定の反応ガスを流通させ、バッチ方式あるいは
インライン方式等により半導体ウエハ表面にＣＶＤ膜を
形成する。またプラズマＣＶＤ装置では、これらの反応
ガスをプラズマ化して処理室内に流通させる。In these conventional CVD apparatuses, a large number of substrates to be processed such as semiconductor wafers are arranged in a processing chamber that has been subjected to atmospheric pressure or reduced pressure, and while these substrates are heated, for example, SiH 4 , PH 3, and O 3 are placed in the processing chamber. 2 or SiH 4 and O
A predetermined reaction gas such as 2 is circulated, and a CVD film is formed on the surface of the semiconductor wafer by a batch method or an in-line method. Further, in the plasma CVD apparatus, these reaction gases are turned into plasma and circulated in the processing chamber.
（発明が解決しようとする問題点） しかしながら上記説明の従来のＣＶＤ装置では、処理室
内に流通させる反応ガスを処理室内に配置された半導体
ウエハ等の被処理基板の表面に均一に供給することが困
難であり、このため各半導体ウエハ間にあるいは半導体
ウエハの表面の部位によって、形成されたＣＶＤ膜の膜
厚が不均一になるという問題があった。(Problems to be Solved by the Invention) However, in the conventional CVD apparatus described above, the reaction gas to be circulated in the processing chamber can be uniformly supplied to the surface of the substrate to be processed such as a semiconductor wafer arranged in the processing chamber. Therefore, there is a problem in that the film thickness of the formed CVD film becomes uneven between the semiconductor wafers or depending on the surface of the semiconductor wafer.
本発明はかかる従来の事情に対処してなされたもので、
各半導体ウエハおよび半導体ウエハの表面全面に、均一
な膜厚でＣＶＤ膜を形成することのできる被処理体の処
理方法を提供しようとするものである。The present invention has been made in response to such conventional circumstances,
It is an object of the present invention to provide a method of processing an object to be processed, which is capable of forming a CVD film with a uniform film thickness on the entire surface of each semiconductor wafer and the semiconductor wafer.
［発明の構成］ （問題点を解決するための手段） すなわち本発明の被処理体の処理方法は、被処理体を処
理室内の載置台に載置し、前記処理室内を所定圧力に設
定する工程と、前記被処理体を所定温度に設定した後、
オゾンを含む酸素ガスおよび成膜ガスと予め冷却され、
前記被処理体に近接対向して設けられたガス流出部へ供
給する工程とを具備し、前記被処理体表面に前記ガス流
出部から略垂直に前記２種のガスを供給し、前記被処理
体の処理面にＣＶＤ膜を形成することを特徴とする （作 用） 本発明の被処理体の処理方法では、まず、被処理体を処
理室内の載置台に載置し、処理室内を所定圧力に設定す
る。[Structure of the Invention] (Means for Solving the Problems) That is, in the method for processing an object to be processed of the present invention, the object to be processed is placed on a mounting table in the processing chamber, and the processing chamber is set to a predetermined pressure. After setting the process and the object to be treated at a predetermined temperature,
Pre-cooled with oxygen gas containing ozone and film forming gas,
Supplying the gas to the object to be processed to a gas outflow portion provided in close proximity to the object to be processed, and supplying the two kinds of gas to the surface of the object to be processed substantially perpendicularly from the gas outflow part, A CVD film is formed on the processing surface of the body (work). In the method of processing a body to be processed of the present invention, first, the body to be processed is placed on a mounting table in the processing chamber, and the inside of the processing chamber is predetermined. Set to pressure.
次に、被処理体を所定温度に設定した後、オゾンを含む
酸素ガスおよび成膜ガスとを予め冷却され、前記被処理
体に近接対向して設けられたガス流出部へ供給する。成
膜ガスとしては、例えば、ＳｉＨ4、ＰＨ3、Ｂ２Ｈ６中
から選ばれた少なくとも２つのガスを含むガスを用い
る。また、ガス流出部は、被処理体に対して、例えば
０．５乃至２０ｍｍ程度の関隙を設けて近接対向して配
置されている。Next, after setting the temperature of the object to be processed to a predetermined temperature, the oxygen gas containing ozone and the film forming gas are cooled in advance and supplied to the gas outflow portion provided in close proximity to the object to be processed. As the film forming gas, for example, a gas containing at least two gases selected from SiH 4 , PH 3 , and B 2 H 6 is used. Further, the gas outflow portion is arranged close to and facing the object to be processed with a clearance of, for example, about 0.5 to 20 mm provided.
そして、被処理体表面にガス流出部から略垂直に前記２
種のガスを供給し、被処理体の処理面にＣＶＤ膜を形成
する。Then, the above-mentioned 2
A seed gas is supplied to form a CVD film on the processed surface of the object to be processed.
したがって、ガス流出部と半導体ウエハ等の被処理基板
との間に形成されたギャップが、均一なガス濃度の反応
空間となり、各被処理基板全面に均一なＣＶＤ膜を形成
することができる。Therefore, the gap formed between the gas outlet and the substrate to be processed such as a semiconductor wafer becomes a reaction space having a uniform gas concentration, and a uniform CVD film can be formed on the entire surface of each substrate to be processed.
また、所定の反応ガスは、冷却されたガス流出部から加
熱された被処理基板へ向けて流出されるので、高温にお
いて分解されやすい反応ガスでも被処理基板に供給され
る直前まで分解されることがなく反応ガスを有効に使用
することができ、高速な成膜速度で処理を行なうことが
できる。Further, since the predetermined reaction gas flows out from the cooled gas outflow portion toward the heated target substrate, even a reaction gas which is easily decomposed at a high temperature can be decomposed until just before being supplied to the target substrate. It is possible to effectively use the reaction gas without any problem, and it is possible to perform the processing at a high film forming rate.
（実施例） 以下、本発明の被処理体の処理方法を図面を参照して実
施例について説明する。(Example) Hereinafter, an example of a method for treating an object to be processed according to the present invention will be described with reference to the drawings.
第１図および第４図は本発明の一実施例のＣＶＤ装置を
示すもので、この実施例のＣＶＤ装置では、処理室１１
内には、例えば真空チャック等により半導体ウエハ１２
を吸着保持する載置台１３が配置されており、この載置
台１３は、温度制御装置１４によって制御されるヒータ
１５を内蔵し、昇降装置１６により上下に移動自在とさ
れている。1 and 4 show a CVD apparatus according to an embodiment of the present invention. In the CVD apparatus of this embodiment, a processing chamber 11
Inside the semiconductor wafer 12 is, for example, a vacuum chuck or the like.
A mounting table 13 for adsorbing and holding is placed. The mounting table 13 has a built-in heater 15 controlled by a temperature control device 14, and is vertically movable by an elevating device 16.
載置台１３上方には、円錐形状に形成されたコーン部１
７ａと、このコーン部１７ａの開口部に配置され、第３
図にも示すように、例えば金属あるいはセラミック等の
焼結体からなる拡散板１７ｂとから構成されるガス流出
部１７が配置されており、ガス流出部１７は、冷却装置
１８からコーン部１７ａの外側に配置された配管１８ａ
内を循環される冷却水等により冷却されている。Above the mounting table 13, the cone portion 1 formed in a cone shape.
7a and the opening of this cone portion 17a,
As shown in the figure, a gas outflow portion 17 composed of a diffusion plate 17b made of, for example, a sintered body such as metal or ceramic is arranged, and the gas outflow portion 17 is provided from the cooling device 18 to the cone portion 17a. Piping 18a arranged outside
It is cooled by cooling water circulating inside.
そしてガス流出部１７は、それぞれガス流量調節器１９
ａ、１９ｂ、１９ｃを備えたガス供給源２０ａ、２０
ｂ、２０ｃに接続されている。Then, the gas outflow unit 17 has a gas flow rate controller 19 respectively.
Gas supply sources 20a, 20 including a, 19b, 19c
b, 20c.
また、載置台１３の周囲には、この載置台１３の周囲を
囲むように例えばスリット状あるいは複数の開口からな
る排気口２１が配置されており、この排気口２１は、排
気装置２２に接続されている。In addition, an exhaust port 21 having, for example, a slit shape or a plurality of openings is arranged around the mounting table 13 so as to surround the mounting table 13, and the exhaust port 21 is connected to an exhaust device 22. ing.
そして上記構成のこの実施例のＣＶＤ装置では、次のよ
うにしてＣＶＤを行なう。Then, in the CVD apparatus of this embodiment having the above-mentioned configuration, the CVD is performed as follows.
すなわち、まず昇降装置１６によって載置台１３を下降
させ、ガス流出部１７との間に図示しないウエハ搬送装
置のアーム等が導入される間隔が設けられ、半導体ウエ
ハ１２がこのウエハ搬送装置等により載置台１３上に載
置され、吸着保持される。That is, first, the elevating device 16 lowers the mounting table 13 to provide a gap between the gas outflow part 17 and an arm or the like (not shown) of a wafer transfer device, and the semiconductor wafer 12 is loaded by the wafer transfer device or the like. It is placed on the table 13 and suction-held.
この後、昇降装置１６によって載置台１３を上昇させ、
ガス流出部１７の拡散板１７ｂと、半導体ウエハ１２表
面との間隔が例えば0.5〜20mm程度の所定の間隔に設定
される。なおこの場合、ガス流出部１７を昇降装置によ
って上下動させてもよい。After that, the mounting table 13 is lifted by the lifting device 16,
The distance between the diffusion plate 17b of the gas outflow part 17 and the surface of the semiconductor wafer 12 is set to a predetermined distance of, for example, about 0.5 to 20 mm. In this case, the gas outflow part 17 may be moved up and down by the lifting device.
半導体ウエハ１２が載置台１３上に配置されるとガス供
給源２０ａ、２ ０ｂ、２０ｃから供給される酸素ガ
スおよびＳｉＨ4、ＰＨ3、Ｂ3H6等の所定の反応ガス
が、少なくとも２種のガス流量調節器１９ａ、１９ｂ、
１９ｃにより流量を調節されて、ガス流出部１７の拡散
板１７ｂから半導体ウエハ１２表面へ向けて流出され
る。なおこの時、載置台１３は、温度制御装置１４およ
びヒータ１５により例えば250℃乃至500℃程度に加熱さ
れ、半導体ウエハ１２を加熱する。この加熱された半導
体ウエハ１２の表面に流出噴射された反応ガスは、酸素
原子ラジカルを生成し、この生成した酸素原子ラジカル
と他の反応ガスとの反応により成膜する。ガス流出部１
７は、冷却装置１８から配管１８ａ内を循環させる冷却
水により冷却される。この冷却は、反応ガスが高温に晒
されて反応により変化するのを防止するためである。そ
して、排気装置２２により排気口２１から排気を行な
い、処理室１１内の気体圧力を700〜200Torr程度に設定
する。When the semiconductor wafer 12 is placed on the mounting table 13, at least two kinds of oxygen gas supplied from the gas supply sources 20a, 20b, 20c and a predetermined reaction gas such as SiH 4 , PH 3 , B 3 H 6 are supplied. Gas flow controllers 19a, 19b,
The flow rate of the gas is adjusted by 19c, and the gas flows out from the diffusion plate 17b of the gas outflow portion 17 toward the surface of the semiconductor wafer 12. At this time, the mounting table 13 is heated to, for example, about 250 ° C. to 500 ° C. by the temperature controller 14 and the heater 15 to heat the semiconductor wafer 12. The reaction gas that has flown out and jetted onto the surface of the heated semiconductor wafer 12 generates oxygen atom radicals, and a film is formed by the reaction between the generated oxygen atom radicals and another reaction gas. Gas outlet 1
7 is cooled by cooling water circulating from the cooling device 18 through the pipe 18a. This cooling is to prevent the reaction gas from being exposed to high temperature and changing due to the reaction. Then, the gas is exhausted from the exhaust port 21 by the exhaust device 22, and the gas pressure in the processing chamber 11 is set to about 700 to 200 Torr.
この時、第２図に矢印で示すように、ガス流出部１７の
拡散板１７ｂから流出したガスは、拡散板１７ｂと半導
体ウエハ１２との間に形成された反応空間内で、半導体
ウエハ１２の中央部から周辺部へ向かうガスの流れを形
成する。ここで所定の反応ガスは、加熱された半導体ウ
エハ１２およびその周囲の雰囲気により加熱され、化学
的な反応を起こし、半導体ウエハ１２の表面にＣＶＤ膜
が形成される。At this time, as shown by the arrow in FIG. 2, the gas flowing out from the diffusion plate 17b of the gas outflow portion 17 is removed from the semiconductor wafer 12 in the reaction space formed between the diffusion plate 17b and the semiconductor wafer 12. It forms a gas flow from the central part to the peripheral part. Here, the predetermined reaction gas is heated by the heated semiconductor wafer 12 and the atmosphere around it to cause a chemical reaction, and a CVD film is formed on the surface of the semiconductor wafer 12.
上記説明のこの実施例のＣＶＤ装置では、ガス流出部１
７と半導体ウエハ１２との間に形成されたギャップが、
均一なガス濃度の反応空間となり、各半導体ウヘハ１２
全面に均一なＣＶＤ膜を形成することができる。また、
所定の反応ガスは、冷却されたガス流出部１７から加熱
された半導体ウエハ１２へ向けて流出されるので、高温
において分解されやすい反応ガスでも半導体ウエハ１２
に供給される直前まで分解されることがなく反応ガスを
有効に使用することができ、高速な成膜速度で処理を行
なうことができる。In the CVD apparatus of this embodiment described above, the gas outlet 1
7 and the semiconductor wafer 12 formed a gap,
It becomes a reaction space of uniform gas concentration,
A uniform CVD film can be formed on the entire surface. Also,
Since the predetermined reaction gas flows out from the cooled gas outflow portion 17 toward the heated semiconductor wafer 12, even the reaction gas which is easily decomposed at a high temperature can be used in the semiconductor wafer 12 as well.
The reaction gas can be effectively used without being decomposed until just before being supplied to, and the processing can be performed at a high film formation rate.
なお、この実施例では、所定の反応ガスの１つとして酸
素ガスを用いる場合について説明したが、例えば第４図
に示すように、酸素供給源２５から供給される酸素ガス
内にオゾン発生器２６によってオゾンを発生させ、オゾ
ンを含む酸素ガスによってＣＶＤ膜を形成するよう構成
してもよい。このようなオゾンは、高温とされると分解
が促進されるので、ガス流出部１７の温度は25℃程度と
することが好ましい。なお同図において前述の第１図に
示すＣＶＤ装置と同一の部分には、同一符号を付してあ
る。In addition, although the case where oxygen gas is used as one of the predetermined reaction gases has been described in this embodiment, for example, as shown in FIG. 4, the ozone generator 26 is provided in the oxygen gas supplied from the oxygen supply source 25. Alternatively, ozone may be generated by the above method, and the CVD film may be formed by an oxygen gas containing ozone. Since decomposition of such ozone is promoted when it is heated to a high temperature, the temperature of the gas outflow portion 17 is preferably set to about 25 ° C. In the figure, the same parts as those of the CVD apparatus shown in FIG. 1 are designated by the same reference numerals.
縦軸を成膜速度、横軸を半導体ウエハ１２の温度とした
第５図のグラフの実線Ａ、Ｂは、それぞれ第１図に示し
たＣＶＤ装置および第４図に示したオゾンを含む酸素ガ
スによってＣＶＤ膜を形成するＣＶＤ装置の成膜速度を
示している。このグラフからわかるように、オゾンを含
む酸素ガスを用いると、より低温で高速な成膜速度を得
ることができる。Solid lines A and B in the graph of FIG. 5 in which the vertical axis represents the film formation rate and the horizontal axis represents the temperature of the semiconductor wafer 12 are the CVD apparatus shown in FIG. 1 and the oxygen gas containing ozone shown in FIG. 4, respectively. Shows the deposition rate of a CVD apparatus for forming a CVD film. As can be seen from this graph, when oxygen gas containing ozone is used, it is possible to obtain a higher film formation rate at a lower temperature.
なお、これら実施例ではガス流出部１７を、円錐形状の
コーン部１７ａの開口部に金属あるいはセラミック等の
焼結体からなる拡散板１７ｂを配置して構成したが、本
発明は係る実施例に限定されるものではなく、例えば拡
散板１７ｂは、第６図に示すように多数の小孔３０ｃを
備えた拡散板３０ｂとしてもよく、第７図に示すように
複数の同心円状のスリット３１ｃを備えた拡散板３１
ｂ、第８図に示すように直線状のスリット３２ｃを備え
た拡散板３２ｂ、第９図に示すように大きさの異なる小
孔３３ｃを配置された拡散板３３ｂ、第１０図に示すよ
うに渦巻状のスリット３４ｃを備えた拡散板３４ｂ等と
してもよい。In these embodiments, the gas outflow portion 17 is configured by disposing the diffuser plate 17b made of a sintered body such as metal or ceramic in the opening of the cone-shaped cone portion 17a. For example, the diffusing plate 17b may be a diffusing plate 30b having a large number of small holes 30c as shown in FIG. 6, and may have a plurality of concentric circular slits 31c as shown in FIG. Diffusion plate 31 provided
b, a diffusion plate 32b having a linear slit 32c as shown in FIG. 8, a diffusion plate 33b having small holes 33c of different sizes as shown in FIG. 9, and as shown in FIG. It may be a diffusion plate 34b having a spiral slit 34c.
［発明の効果］ 上述のように本発明の被処理体の処理方法では、ガス流
出部と半導体ウエハ等の被処理基板との間に形成された
ギャップが、均一なガス濃度の反応空間となり、各被処
理基板全面に均一なＣＶＤ膜を形成することができる。
また、所定の反応ガスは、冷却されたガス流出部から加
熱された被処理基板へ向けて流出されるので、例えばオ
ゾン等の高温において分解されやすい反応ガスでも被処
理基板に供給される直前まで分解されることがなく反応
ガスを有効に使用することができ、高速な成膜速度で処
理を行なうことができる。[Advantages of the Invention] As described above, in the method for processing an object to be processed of the present invention, the gap formed between the gas outflow portion and the substrate to be processed such as a semiconductor wafer becomes a reaction space having a uniform gas concentration, A uniform CVD film can be formed on the entire surface of each substrate to be processed.
Moreover, since the predetermined reaction gas flows out from the cooled gas outflow portion toward the heated substrate to be processed, even a reaction gas which is easily decomposed at a high temperature such as ozone is supplied to the substrate to be processed. The reaction gas can be effectively used without being decomposed, and the processing can be performed at a high film formation rate.
第１図は本発明の一実施例のＣＶＤ装置を示す構成図、
第２図は第１図の要部を示す縦断面図、第３図は第１図
の要部を示す下面図、第４図は第１図のＣＶＤ装置の変
形例を示す構成図、第５図は成膜速度と温度の関係を示
すグラフ、第６図〜第１０図は第３図の変形例を示す下
面図である。 １２……半導体ウエハ、１７……ガス流出部、１４……
温度制御装置、１５……ヒータ、１８……冷却装置。FIG. 1 is a block diagram showing a CVD apparatus according to an embodiment of the present invention,
2 is a longitudinal sectional view showing an essential part of FIG. 1, FIG. 3 is a bottom view showing an essential part of FIG. 1, and FIG. 4 is a configuration diagram showing a modified example of the CVD apparatus of FIG. FIG. 5 is a graph showing the relationship between film formation rate and temperature, and FIGS. 6 to 10 are bottom views showing modified examples of FIG. 12 ... Semiconductor wafer, 17 ... Gas outflow part, 14 ...
Temperature control device, 15 ... Heater, 18 ... Cooling device.
Claims (3)
記処理室内を所定圧力に設定する工程と、 前記被処理体を所定温度に設定した後、オゾンを含む酸
素ガスおよび成膜ガスとを予め冷却され、前記被処理体
に近接対向して設けられたガス流出部へ供給する工程と
を具備し、 前記被処理体表面に前記ガス流出部から略垂直に前記２
種のガスを供給し、前記被処理体の処理面にＣＶＤ膜を
形成することを特徴とする被処理体の処理方法。1. A step of placing an object to be processed on a mounting table in a processing chamber and setting a predetermined pressure in the processing chamber; and, after setting the object to be processed to a predetermined temperature, oxygen gas containing ozone and oxygen. A film gas is pre-cooled and is supplied to a gas outflow portion provided in close proximity to the object to be processed, and the film gas is substantially perpendicular to the surface of the object to be processed from the gas outflow portion.
A method for treating an object to be treated, which comprises supplying a seed gas to form a CVD film on the treated surface of the object.
Ｈ６の中から選ばれた少なくとも２つのガスを含むこと
を特徴とする特許請求の範囲第１項記載の被処理体の処
理方法。2. The film forming gas is SiH 4 , PH 3 , B 2
The method for treating an object to be treated according to claim 1, further comprising at least two gases selected from H 6 .
ことを特徴とする特許請求の範囲第１項記載の被処理体
の処理方法。3. The method for treating an object to be treated according to claim 1, wherein the predetermined temperature is 250 ° C. or lower.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61229059A JPH062948B2 (en) | 1986-09-27 | 1986-09-27 | How to treat the object |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61229059A JPH062948B2 (en) | 1986-09-27 | 1986-09-27 | How to treat the object |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6310129A Division JP2751015B2 (en) | 1994-12-14 | 1994-12-14 | Processing method of the object |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6383275A JPS6383275A (en) | 1988-04-13 |
| JPH062948B2 true JPH062948B2 (en) | 1994-01-12 |
Family
ID=16886093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61229059A Expired - Lifetime JPH062948B2 (en) | 1986-09-27 | 1986-09-27 | How to treat the object |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH062948B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2786224B2 (en) * | 1989-01-23 | 1998-08-13 | アネルバ株式会社 | Thin film production apparatus and method |
| JP4542641B2 (en) * | 1999-05-24 | 2010-09-15 | 株式会社アルバック | Semiconductor manufacturing apparatus and barrier metal film forming method using this apparatus |
| JP4635266B2 (en) * | 1999-11-29 | 2011-02-23 | 富士通セミコンダクター株式会社 | Chemical vapor deposition equipment |
| KR100717583B1 (en) * | 2000-08-26 | 2007-05-15 | 주성엔지니어링(주) | Plasma enhanced chemical vapor deposition apparatus |
| JP4058364B2 (en) * | 2003-03-18 | 2008-03-05 | 株式会社日立製作所 | Semiconductor manufacturing equipment |
| US7775141B2 (en) | 2008-08-01 | 2010-08-17 | Snap-On Incorporated | Extended low-torque ratchet wrench |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5976870A (en) * | 1982-10-25 | 1984-05-02 | Seiko Epson Corp | Formation of oxide film by chemical vapor deposition |
| JPS6085531A (en) * | 1983-10-17 | 1985-05-15 | Sony Corp | Formation of thin-film |
| JPS60131969A (en) * | 1983-12-20 | 1985-07-13 | Applied Material Japan Kk | Chemical vapor growth deposition device |
| JPS61110767A (en) * | 1984-10-31 | 1986-05-29 | Fujitsu Ltd | Cvd device |
-
1986
- 1986-09-27 JP JP61229059A patent/JPH062948B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6383275A (en) | 1988-04-13 |
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