KR200298458Y1 - Process chamber of semi conductor manufacturing equipment - Google Patents

Abstract

The present invention relates to a vertical process chamber of a semiconductor manufacturing facility having two or more susceptors and a shower head. The process chamber of the present invention includes a susceptor on which a wafer is mounted, and a susceptor heating device for heating the susceptor; In addition, two or more chamber modules including a gas ejector for ejecting a process gas to a wafer mounted on the susceptor are provided in a stacking direction. Therefore, the wafer processing speed per unit time is increased to shorten the manufacturing period, and it is possible to prevent the uniformity of the film quality due to partial temperature difference of the susceptor.

Description

PROCESS CHAMBER OF SEMI CONDUCTOR MANUFACTURING EQUIPMENT

The present invention relates to a chamber in which a process for depositing a thin film on a wafer is performed, and more particularly, to a vertical process chamber of a semiconductor manufacturing facility having two or more susceptors and a shower head.

In the semiconductor device manufacturing process, a chemical vapor deposition (CVD) apparatus is used to deposit a thin film on the surface of a wafer. The process using the CVD apparatus sends a gaseous chemical including a material atom to be deposited to a process chamber, where the chemical reacts with another gas to produce a desired material and deposit the material on a wafer.

Conventional process chambers typically include a susceptor on which a wafer is mounted, a heating device for heating the susceptor, and a shower head for ejecting process gas.

However, in the conventional process chamber, since only one susceptor and one shower head are provided inside the chamber, there is a problem in that the wafer processing speed is slow and the manufacturing period is long.

Therefore, in order to solve the above problems, a process chamber having a double type susceptor capable of simultaneously depositing two wafers at the same time has been proposed, but this chamber has a double type susceptor compared to a single type susceptor. Although the area is relatively large, only one heater controls the temperature of the susceptor, which causes a large partial temperature difference in the susceptor. The temperature difference prevents heat from being uniformly transferred to the wafer. There is a problem that the uniformity of the film quality is reduced.

The present invention has been proposed to solve the above problems, and an object thereof is to provide a process chamber of a semiconductor manufacturing facility which can improve uniformity of film quality and can shorten manufacturing time.

1 is a perspective view showing a schematic configuration of a process chamber according to the present invention,

2 is a cross-sectional view showing the structure of the susceptor shown in FIG.

3 is a cross-sectional view showing the structure of the shower head shown in FIG.

Explanation of symbols on the main parts of the drawings

10,10 ': chamber module 12,12': susceptor

14,14 ': Shower Head

The object of the present invention is a chamber module comprising a susceptor on which a wafer is mounted, a susceptor heating device for heating the susceptor, and a gas ejector for supplying a process gas to the wafer mounted on the susceptor. It is achieved by a process chamber of a semiconductor manufacturing equipment equipped with a lamination.

According to a preferred embodiment of the present invention, the chamber modules, the lower susceptor on which the wafer is mounted, the lower susceptor heating device for heating the susceptor, and supply the process gas to the wafer mounted on the lower susceptor A lower chamber module comprising a lower gas ejector, an upper susceptor installed above the lower gas ejector, on which a wafer is mounted, an upper susceptor heating device for heating the upper susceptor, and an upper susceptor. It consists of an upper chamber module consisting of an upper gas ejector for supplying a process gas to the wafer.

The susceptor includes a wafer mounting portion immersed from an upper surface of the susceptor, and a pin assembly supporting the wafer to be lifted up and down. A heating coil or a heating lamp for heating the susceptor is provided inside the susceptor. The gas ejector comprises a shower head having a gas chamber and gas holes for ejecting a process gas supplied to the gas chamber onto a wafer.

Here, the gas chamber of the shower head may be configured to supply a pre-mixed process gas from the outside through the gas inlet, or may be configured to be mixed in the gas chamber after the various types of gas is supplied through the gas inlet.

Hereinafter, a process chamber according to a preferred embodiment of the present invention with reference to the accompanying drawings in detail as follows.

Figure 1 shows a schematic configuration diagram of a process chamber according to the present invention, Figure 2 is a cross-sectional view showing the structure of the susceptor shown in Figure 1, Figure 3 shows the structure of the shower head shown in Figure 1 It is a cross section.

As shown in the figure, the process chamber 100 of the present invention consists of two or more chamber modules arranged vertically, in Figure 1 two chamber modules, namely the lower chamber module 10 and the upper chamber module 10 A process chamber 100 consisting of 'is shown.

In the present exemplary embodiment, the lower chamber module 10 is supported on the support 30 and is mounted on the lower susceptor 12 on which the wafer W is mounted, and on the lower susceptor 12. And a lower shower head 14 for ejecting a process gas to the upper chamber W. The upper chamber module 10 ′ installed above the lower chamber module 10 includes an upper susceptor (W) on which another wafer W is mounted. 12 'and the upper shower head 14' which is provided above the upper susceptor 12 'and ejects the process gas to the wafer W. Here, the configuration of the lower susceptor 12 and the upper susceptor 12 ', and the lower shower head 14 and the upper shower head 14' are the same, so the lower susceptor 12 and the lower side will be described below. Only the shower head 14 will be described.

Referring to FIG. 2, the lower susceptor 12 has a wafer mount portion 12a on which a wafer W is mounted, which is fixed from the upper surface of the susceptor 12 as shown. Immerse in depth. This is to prevent the flow of the wafer W mounted on the wafer mounting portion 12a.

In addition, the lower susceptor 12 is provided with a pin assembly 12bb having pins 12b supporting the wafer W. The pin assembly 12bb is composed of a motor and other necessary components. The pins 12b have a conventional structure that slides vertically.

The pins 12b preferably have a height that allows heat transfer from the susceptor 12 to the wafer W, and when loaded / unloaded by the pins 12b to / from the wafer mount 12a. It also serves to prevent unnecessary movement due to the charge generated between the susceptor 12 and the wafer (W).

In addition, a heating coil 12c or a heating lamp (not shown) is installed inside the lower susceptor 12. Although not shown, the heating coil 12c is provided inside the upper susceptor 12 '. It may be controlled independently from the coil and may be controlled at the same time.

On the other hand, the lower shower head 14 installed above the lower susceptor 12 includes a gas chamber 14a and gas holes 14b that eject the process gas supplied to the gas chamber 14a to the wafer W. Equipped. In this case, the gas holes 14b may be formed such that the flow rate of the process gas ejected from the edge portion of the surface facing the wafer W is greater than the flow rate of the process gas injected from the center of the facing surface. To this end, the plurality of gas holes 14b may be formed with more concentric shapes at the edges than at the center of the face opposite the wafer W, and also have a larger diameter at the edges than at the center. Can be.

In addition, the shower head 14 is provided with a gas inlet 14c, the gas inlet 14c may be made of one, or two or more.

When one gas inlet 14c is provided, the process gas may be pre-mixed with various types of gases from the outside, and then supplied to the gas chamber 14a through the gas inlet 14c, and two or more gas inlets 14a may be provided. In this case, after supplying various types of gases through the respective gas injection holes 14c, the gases may be mixed in the gas chamber 14a.

As described above, the process chamber 100 of the present invention can be usefully applied to various types of semiconductor manufacturing equipment as well as cold wall type, warm wall type, atmospheric pressure CVD, reduced pressure CVD, plasma CVD, and the like.

As described above, in the process chamber of the present invention, since two or more chamber modules are disposed vertically, the wafer processing speed per unit time is increased, thereby shortening the manufacturing period.

In addition, since the upper and lower susceptors are heated by respective heating coils or heating lamps, it is possible to reduce the occurrence of partial temperature differences of the susceptors, and to prevent the uniformity of the film quality caused by the temperature differences.

Claims (6)

A semiconductor module including a susceptor on which a wafer is mounted, a susceptor heating device for heating the susceptor, and a gas module for ejecting a process gas to a wafer mounted on the susceptor. Process chamber. The chamber module of claim 1, wherein the chamber modules include a lower susceptor on which a wafer is mounted, a lower susceptor heating device that heats the susceptor, and a lower gas that ejects a process gas to a wafer mounted on the lower susceptor. A lower chamber module comprising an ejector, an upper susceptor installed above the lower gas ejector, on which the wafer is mounted, an upper susceptor heating device for heating the upper susceptor, and a wafer mounted on the upper susceptor. Process chamber of a semiconductor manufacturing facility comprising an upper chamber module comprising an upper gas ejector for ejecting gas. 3. The susceptor according to claim 1 or 2, wherein the susceptor includes a wafer mount portion immersed from an upper surface of the susceptor, and a pin assembly for supporting the wafer to be lifted and lowered. Process chamber of a semiconductor manufacturing facility provided with a heating coil or a heating lamp for heating. 4. The process chamber of claim 3 wherein the gas ejector comprises a gas chamber and a shower head having gas holes for ejecting process gas supplied to the gas chamber to a wafer. The process chamber of claim 4, wherein a process gas premixed externally is supplied to a gas chamber of the shower head through a gas injection port. The process chamber of claim 4, wherein various types of gases are supplied to the gas chamber of the shower head through the gas inlets, and then mixed in the gas chamber.