JPH07161656A - Heat-treating device - Google Patents

Heat-treating device

Info

Publication number
JPH07161656A
JPH07161656A JP5341425A JP34142593A JPH07161656A JP H07161656 A JPH07161656 A JP H07161656A JP 5341425 A JP5341425 A JP 5341425A JP 34142593 A JP34142593 A JP 34142593A JP H07161656 A JPH07161656 A JP H07161656A
Authority
JP
Japan
Prior art keywords
transfer chamber
heat treatment
wafer
circulation
ventilation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5341425A
Other languages
Japanese (ja)
Other versions
JP3402713B2 (en
Inventor
Takashi Tanahashi
隆司 棚橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron Tohoku Ltd
Original Assignee
Tokyo Electron Ltd
Tokyo Electron Tohoku Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron Tohoku Ltd filed Critical Tokyo Electron Ltd
Priority to JP34142593A priority Critical patent/JP3402713B2/en
Priority to TW083111244A priority patent/TW273574B/zh
Priority to US08/353,288 priority patent/US5551984A/en
Priority to KR1019940033374A priority patent/KR100269413B1/en
Publication of JPH07161656A publication Critical patent/JPH07161656A/en
Application granted granted Critical
Publication of JP3402713B2 publication Critical patent/JP3402713B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To reduce the adverse effect of an impurity, which is scattered from a dust-removing filter part, in a heat-treating device of a structure, wherein an air flow is formed within a transfer chamber through a vent path for circulation provided with the dust-removing filter part. CONSTITUTION:A circulating duct part 4 arranged with a blowing fan 43 and a shutter S is provided so as to form an air flow within a transfer chamber 3 on the side of the lower part of a heat-treating furnace 2 and a dust-removing filter part 5 is provided in a blow-off port of the duct part 4. Moreover, three air feed pipes 60 to 62, for example, which are formed with a multitude outlet holes 60, are respectively provided at a position of a prescribed height on the side of the front of this filter part 5 and a clean gas feed source 64 is connected to the side of a base end of these pipes via an on-off valve 63. After an unloading of wafers W is started, clean gas from the source 64 is circulated in the chamber 3 while the wafers W are detached from a wafer boat 32 and the circulation of the air flow in the chamber 3 is kept stopped.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、熱処理装置に関する。FIELD OF THE INVENTION The present invention relates to a heat treatment apparatus.

【0002】[0002]

【従来の技術】半導体ウエハの製造プロセスの中には成
膜処理、酸化処理、及び拡散処理などの熱処理工程があ
るが、このような熱処理をバッチ式で行う熱処理装置と
して、大気の巻き込みが少ないなどの利点から縦型熱処
理装置が普及している。
2. Description of the Related Art A semiconductor wafer manufacturing process includes heat treatment steps such as film forming treatment, oxidation treatment, and diffusion treatment. However, as a heat treatment apparatus for performing such heat treatment in a batch system, it is less likely to involve air. Vertical heat treatment equipment has become widespread because of its advantages.

【0003】この縦型熱処理装置は、図7に示すように
縦型熱処理炉11の下方側に作業空間をなす移載室12
が形成され、この移載室12と熱処理炉との間を昇降す
るウエハボート13を設けて構成されている。その動作
については、ウエハボート13上にウエハWを上下に棚
状に載置した後、ボートエレベータ14によりウエハボ
ート13を熱処理炉11内に搬入して所定の熱処理を行
い、その後ウエハボート13を搬出してウエハWをウエ
ハボート13から取り出すようにしている。
In this vertical heat treatment apparatus, as shown in FIG. 7, a transfer chamber 12 which forms a working space below the vertical heat treatment furnace 11 is provided.
And a wafer boat 13 that moves up and down between the transfer chamber 12 and the heat treatment furnace is provided. Regarding the operation, after the wafers W are vertically placed on the wafer boat 13 in a rack shape, the boat boat 14 carries the wafer boat 13 into the heat treatment furnace 11 to perform a predetermined heat treatment, and then the wafer boat 13 is The wafer W is carried out and taken out from the wafer boat 13.

【0004】そしてこの熱処理装置においては、雰囲気
中に存在するパーティクルやウエハWの移載時に発生す
るパーティクルがウエハWへ付着するのを防止するため
に、図示しない循環用通風路より除塵フィルタ部15を
通して清浄化された空気を移載室12内に通流させるよ
うにしている。
In this heat treatment apparatus, in order to prevent particles existing in the atmosphere and particles generated during transfer of the wafer W from adhering to the wafer W, a dust removal filter section 15 is provided from a circulation ventilation passage (not shown). The purified air is allowed to flow into the transfer chamber 12 through.

【0005】[0005]

【発明が解決しようとする課題】ところで前記フィルタ
部15は、濾紙を蛇腹状に屈曲させ、その上下及び両サ
イドを接着剤により枠材に固定したものが用いられてい
るが、熱処理炉より搬出されたウエハWは高温状態であ
るため、このウエハWからの輻射熱によりフィルタ部1
5が加熱されて高温になり、フィルタ部15に使用され
ている接着剤、例えばエポキシ樹脂からハイドロカーボ
ンなどの有機成分が飛散する。そしてこの有機成分が高
温の半導体ウエハの成膜層と反応して成膜層の電気的特
性や膜性能等を劣化させ、歩留まりを低下させ、特にこ
の影響は16MDRAM(ランダムアクセスメモリ)以
上の微細加工では著しく大きく現われる。
The filter part 15 is formed by bending the filter paper into a bellows shape and fixing the upper and lower sides and both sides of the filter paper to a frame member with an adhesive. The filter part 15 is carried out from the heat treatment furnace. Since the processed wafer W is in a high temperature state, the radiant heat from the wafer W causes the filter portion 1 to
5 is heated to a high temperature, and an organic component such as hydrocarbon is scattered from the adhesive used in the filter portion 15, for example, an epoxy resin. Then, this organic component reacts with the film formation layer of the semiconductor wafer at a high temperature to deteriorate the electrical characteristics and film performance of the film formation layer and lowers the yield. In particular, this influence is more than 16 MDRAM (random access memory). Remarkably large in processing.

【0006】またフィルタ部15に用いられる濾紙の中
にはボロン(B)等の不純物が含まれており、濾紙が高
温に加熱されると、ボロン等の飛散量が多くなり、デバ
イスのパターンが微細化してくると、濾紙からの不純物
も歩留まりに大きく影響を与える。
Further, the filter paper used in the filter section 15 contains impurities such as boron (B), and when the filter paper is heated to a high temperature, the amount of scattered boron etc. increases and the device pattern is changed. As it becomes finer, impurities from the filter paper also greatly affect the yield.

【0007】本発明はこのような事情のもとになされた
ものであり、その目的は、移載室の被処理体に対して、
除塵フィルタ部から飛散する不純物の悪影響を低減する
ことのできる熱処理装置を提供することにある。
The present invention has been made under the circumstances as described above, and its purpose is to provide an object to be processed in a transfer chamber,
An object of the present invention is to provide a heat treatment apparatus capable of reducing the adverse effects of impurities scattered from the dust removal filter section.

【0008】[0008]

【課題を解決するための手段】請求項1の発明は、被処
理体を被処理体保持具に保持させて移載室から反応管内
に対して搬入、搬出し、吸い込み口及び吹き出し口が移
載室に開口すると共に除塵フィルタ部を備えた循環用通
気路を通じて、移載室内の気体を循環させる熱処理装置
において、清浄気体の供給源と、この供給源からの清浄
気体を前記除塵フィルタ部を通さずに移載室内に供給す
るための供給路と、この供給路に設けられた開閉弁と、
この開閉弁を開くと共に循環用通気路の通気を停止する
第1のモードと、前記開閉弁を閉じると共に循環用通気
路の通気を行う第2のモードとの間で通気モードの切り
換えを制御する制御部と、を設けたことを特徴とする。
According to a first aspect of the present invention, the object to be processed is held by the object-to-be-processed holder and is carried in and out from the transfer chamber into the reaction tube, and the suction port and the blowing port are moved. In a heat treatment apparatus that circulates the gas in the transfer chamber through a circulation air passage that is open to the mounting chamber and is equipped with a dust filter section, a clean gas supply source and the clean gas from this source are supplied to the dust filter section. A supply passage for supplying the transfer chamber without passing through, and an on-off valve provided in this supply passage,
Switching of the ventilation mode is controlled between a first mode in which the opening / closing valve is opened and ventilation in the circulation ventilation passage is stopped and a second mode in which the opening / closing valve is closed and ventilation in the circulation ventilation passage is performed. And a control unit.

【0009】請求項2の発明は、被処理体を被処理体保
持具に保持させて移載室から反応管内に対して搬入、搬
出し、吸い込み口及び吹き出し口が移載室に開口すると
共に除塵フィルタ部を備えた循環用通気路を通じて、移
載室内の気体を循環させる熱処理装置において、少なく
とも反応管より被処理体保持具を搬出した後、被処理体
保持具より被処理体を取り出すまでの間は循環用通気路
の通気を停止するように制御を行う制御部を設けたこと
を特徴とする。
According to the second aspect of the present invention, the object to be processed is held by the object-to-be-processed holder and is carried into and out of the reaction tube from the transfer chamber, and the suction port and the blowing port are opened in the transfer chamber. In a heat treatment apparatus that circulates gas in a transfer chamber through a circulation air passage provided with a dust removal filter section, at least after carrying out the object-to-be-processed holder from the reaction tube and taking out the object-to-be-processed from the object-to-be-treated holder A control unit is provided to control so as to stop the ventilation of the circulation air passage during the period.

【0010】[0010]

【作用】請求項1の発明では、例えば被処理体の熱処理
後にアンロードを始めてから、次の被処理体をロードす
るまでの間は循環用通気路を用いた気体の循環を停止す
ると共に、清浄気体を除塵フィルタ部を通さずに移載室
内に供給して気流を形成する。被処理体が反応管内に収
納されている間は循環用通気路と移載室との間で気体を
循環させ、除塵フィルタ部からの気体により気流を形成
し、移載室内のパーティクルを除去する。従って除塵フ
ィルタ部が熱処理後の被処理体から輻射熱を受けて加熱
されても、被処理体に対してフィルタ部からの有機成分
などの付着が抑えられる。
According to the first aspect of the invention, for example, the circulation of gas using the circulation ventilation passage is stopped from the start of unloading after the heat treatment of the object to be processed until the next object is loaded. Clean gas is supplied into the transfer chamber without passing through the dust removal filter section to form an air flow. While the object to be treated is stored in the reaction tube, gas is circulated between the ventilation passage for circulation and the transfer chamber, and the gas from the dust filter section forms an air flow to remove particles in the transfer chamber. . Therefore, even if the dust removal filter section is heated by receiving radiant heat from the heat-treated object, adhesion of organic components and the like from the filter section to the object is suppressed.

【0011】請求項2の発明では、所定時に清浄気体の
通流を行わずに、気流の循環を停止することにより除塵
フィルタ部からの不純物の影響を少なくする。
According to the second aspect of the present invention, the influence of impurities from the dust removing filter portion is reduced by stopping the circulation of the air flow without passing the clean gas at a predetermined time.

【0012】[0012]

【実施例】図1は本発明を縦型熱処理装置に適用した実
施例を示す縦断側面図、図2はこの縦型熱処理装置の全
体構成を示す斜視図である。図中2は縦型の熱処理炉で
あり、内部は図示していないが、反応管及びその周囲に
設けられたヒータなどにより構成されている。この熱処
理炉2の下方側には、作業空間をなす移載室3が形成さ
れており、これら熱処理炉2及び移載室3は筐体20に
より囲まれている。
FIG. 1 is a vertical sectional side view showing an embodiment in which the present invention is applied to a vertical heat treatment apparatus, and FIG. 2 is a perspective view showing the whole structure of the vertical heat treatment apparatus. Reference numeral 2 in the drawing denotes a vertical heat treatment furnace, which is composed of a reaction tube and a heater provided around the reaction tube, although the inside is not shown. A transfer chamber 3 forming a working space is formed below the heat treatment furnace 2, and the heat treatment furnace 2 and the transfer chamber 3 are surrounded by a housing 20.

【0013】前記移載室3には、昇降機構であるボート
エレベータ31が設けられており、このボートエレベー
タ31の上にはウエハ保持具であるウエハボート32が
載置されている。ウエハボート32は、ウエハWを上下
に棚状に搭載するように構成されており、ボートエレベ
ータ31により熱処理炉2に対して搬入、搬出される。
The transfer chamber 3 is provided with a boat elevator 31 which is an elevating mechanism, and a wafer boat 32 which is a wafer holder is placed on the boat elevator 31. The wafer boat 32 is configured so that the wafers W are vertically mounted in a rack shape, and is loaded into and unloaded from the heat treatment furnace 2 by the boat elevator 31.

【0014】前記移載室3の正面側には、ウエハ受け渡
し部をなすウエハキャリア(以下「キャリア」とい
う。)載置台21が配設されており、このキャリア載置
台21の正面側にはキャリア移載機構22の移載領域を
介してキャリア入出力ポート23が設けられている。前
記キャリア載置台21とボートエレベータ31との間に
はウエハ移載機構22が配設されると共に、キャリア載
置台21の上方にはキャリアストッカ24が設置されて
いる。
On the front side of the transfer chamber 3, a wafer carrier (hereinafter referred to as “carrier”) mounting table 21 that serves as a wafer transfer section is arranged, and on the front side of the carrier mounting table 21, the carrier is placed. A carrier input / output port 23 is provided via the transfer area of the transfer mechanism 22. A wafer transfer mechanism 22 is arranged between the carrier mounting table 21 and the boat elevator 31, and a carrier stocker 24 is installed above the carrier mounting table 21.

【0015】前記移載室3の両側壁には夫々気体の吸い
込み口及び吹き出し口をなす通風口が形成され、この吸
い込み口側の通風口には例えば多数の微小な穴を備えた
金属板よりなる気流規制板41が設けられている。
On both side walls of the transfer chamber 3, there are formed gas inlets and outlets, respectively, which serve as gas inlets and outlets, and the air inlets on the inlet side are made of, for example, a metal plate having many minute holes. An airflow regulating plate 41 is provided.

【0016】移載室3の両側壁、及び移載室3の底面の
下方側には、循環用通気路をなす循環ダクト部4が形成
されている。この循環ダクト部4の例えば移載室3の下
方側には、開閉機構42により通気路を開閉するシャッ
タS、及び送風手段例えば第1の送風ファン43が設け
られると共に、ダクト部4の吹きだし口には、例えば濾
紙を蛇腹状に屈曲してなる除塵フィルタ部5が配設され
ている。
On both side walls of the transfer chamber 3 and on the lower side of the bottom surface of the transfer chamber 3, a circulation duct portion 4 forming a ventilation passage is formed. A shutter S for opening and closing the ventilation path by the opening / closing mechanism 42 and a blower, for example, a first blower fan 43 are provided on the lower side of the circulation duct part 4 such as the transfer chamber 3, and the outlet of the duct part 4 is blown out. Is provided with a dust removal filter portion 5 formed by bending a filter paper in a bellows shape, for example.

【0017】前記循環ダクト部4における第1の送風フ
ァン43の上流側にて、排気ダクト部44が分岐して設
けられており、この排気ダクト部44には第2の送風フ
ァン45が配設されると共に、その排気側は工場排気ダ
クト部に接続されている。
An exhaust duct portion 44 is provided in a branched manner on the upstream side of the first blower fan 43 in the circulation duct portion 4, and a second blower fan 45 is arranged in the exhaust duct portion 44. The exhaust side is connected to the factory exhaust duct.

【0018】前記除塵フィルタ部5の前方側(図1中右
方側)においての上端部、中央部及び下端部には、図1
及び図3に示すように夫々空気供給管60、61、62
が除塵フィルタ部5の幅方向に沿って配管されており、
これら空気供給管60〜62のウエハボート32側に
は、空気吹き出し口6が管路に沿って多数形成されてい
る。前記空気供給管60〜62はこの実施例では、清浄
気体の供給路をなすものであり、開閉弁63を介して共
通な清浄空気供給源例えば清浄空気ボンベに接続されて
いる。
The front side (right side in FIG. 1) of the dust-removing filter portion 5 has the upper end portion, the central portion and the lower end portion as shown in FIG.
And, as shown in FIG. 3, air supply pipes 60, 61, 62, respectively.
Is laid along the width direction of the dust filter unit 5,
On the wafer boat 32 side of these air supply pipes 60 to 62, a large number of air outlets 6 are formed along the pipe lines. In this embodiment, the air supply pipes 60 to 62 form a clean gas supply path, and are connected to a common clean air supply source, for example, a clean air cylinder, via an opening / closing valve 63.

【0019】更にこの実施例では、移載室3内の通気モ
ードを切り換え制御するための制御部7が設けられてい
る。この制御部7は、シャッタSの開閉機構42、第1
の送風ファン43、第2の送風ファン45及び開閉弁6
3を制御し、清浄空気供給源64からの清浄空気を移載
室3内に通流して排気ダクト部44から排気する第1の
モードと、循環ダクト部4を利用して移載室3内の空気
を循環する第2のモードとを所定のタイミングで切り換
え制御する機能を有する。
Further, in this embodiment, a control section 7 for switching and controlling the ventilation mode in the transfer chamber 3 is provided. The control unit 7 includes a shutter S opening / closing mechanism 42, a first
Blower fan 43, second blower fan 45, and on-off valve 6
3 to control clean air from the clean air supply source 64 into the transfer chamber 3 and exhaust it from the exhaust duct part 44, and the transfer duct 3 using the circulation duct part 4. It has a function of controlling switching between the second mode of circulating the air and the second mode at a predetermined timing.

【0020】次に上述実施例の作用について説明する。
先ず被処理体例えばウエハを25枚収納したキャリアC
が図示しない搬送装置によりキャリア入出力ポート23
に載置され、このキャリアCは、キャリア移載機構22
によりキャリア載置台21に移載される。次いで移載室
3内にてウエハ移載機構24によりキャリア載置台21
上のキャリアCからウエハWがウエハボート32に移載
され、ウエハボート32には例えば100枚のウエハW
が上下に棚状に保持される。
Next, the operation of the above embodiment will be described.
First, a carrier C containing 25 objects to be processed, for example, wafers.
Is a carrier input / output port 23 by a carrier device (not shown).
The carrier C is mounted on the carrier transfer mechanism 22.
Are transferred to the carrier mounting table 21. Next, in the transfer chamber 3, the carrier transfer table 21 is moved by the wafer transfer mechanism 24.
Wafers W are transferred from the upper carrier C to the wafer boat 32, and the wafer boat 32 has, for example, 100 wafers W.
Are held up and down like shelves.

【0021】その後ウエハボート32はボートエレベー
タ31により移載室3から熱処理炉2内に搬入(ロー
ド)される。そして熱処理炉2は、予め例えば約800
℃に加熱されており、ウエハWが搬入された後所定温度
例えば1000℃以上の温度に加熱されて熱処理例えば
酸化処理が行われる。所定時間経過後ウエハボート32
はボートエレベータ31により移載室3に搬出され、ウ
エハ移載機構22によりウエハボート32上のウエハW
が取り出されてキャリア載置台21上のキャリアC内に
移載される。
After that, the wafer boat 32 is loaded into the heat treatment furnace 2 from the transfer chamber 3 by the boat elevator 31. And the heat treatment furnace 2 is, for example, about 800 in advance.
The wafer W is heated to a temperature of .degree. C., and after the wafer W is loaded, the wafer W is heated to a predetermined temperature, for example, a temperature of 1000.degree. Wafer boat 32 after a lapse of a predetermined time
Is carried out to the transfer chamber 3 by the boat elevator 31, and the wafer W on the wafer boat 32 is transferred by the wafer transfer mechanism 22.
Are taken out and transferred into the carrier C on the carrier table 21.

【0022】ここで移載室3内における空気の通気モー
ドと上述の工程とを対応させて、図4を参照しながら説
明すると、例えばウエハボート32にウエハが移載され
る工程、ロードされる工程(ローディング)及び熱処理
が行われる工程においては、制御部7は第2のモードつ
まり空気循環モードが選択されている。この第2のモー
ドでは、第1の送風ファン43がオンになると共に、第
2の送風ファン45がオフ、開閉弁63が閉状態、シャ
ッタSが開状態とされており、移載室3内の空気は気流
規制板41から循環ダクト部4における移載室3の図1
中右側面部内に吸い込まれ、移載室3の底面の下方側通
路を介して移載室3の図1中左側面部に送られる。そし
てこの空気は、除塵フィルタ部5を通ってこの中でパー
ティクルが除去された後移載室3内に送り出され、こう
して空気が循環して移載室3内に気流が形成され、ウエ
ハWへのパーティクルの付着を防止している。
The air ventilation mode in the transfer chamber 3 and the above-described steps will be described in correspondence with each other with reference to FIG. 4. For example, the step of transferring a wafer to the wafer boat 32 and loading the wafer will be described. In the process (loading) and the process in which the heat treatment is performed, the control unit 7 selects the second mode, that is, the air circulation mode. In the second mode, the first blower fan 43 is turned on, the second blower fan 45 is turned off, the opening / closing valve 63 is closed, and the shutter S is opened, so that the transfer chamber 3 is Of the air from the air flow regulating plate 41 in the transfer chamber 3 in the circulation duct section 4 of FIG.
It is sucked into the inside right side surface part, and is sent to the left side surface part in FIG. 1 of the transfer chamber 3 through the lower passage of the bottom surface of the transfer chamber 3. Then, this air is sent through the dust removal filter section 5 into the transfer chamber 3 after particles are removed therein, and thus the air circulates to form an air flow in the transfer chamber 3 and to the wafer W. Prevents the particles from adhering.

【0023】そして熱処理工程が終了しアンロードが開
始されると、この時点から、ウエハボート32からのウ
エハWの取り出しが終了するまでの間は、制御部7は第
1のモードつまり清浄空気供給モードを選択する。この
第2のモードでは、第1の送風ファン43がオフとな
り、第2の送風ファン45がオン、開閉弁63が開状
態、シャッタ40が閉状態となり、清浄空気供給源64
よりの清浄空気が空気供給管60〜62に送られ、各空
気供給管60〜62の吹き出し穴6から移載室3内に供
給される。この空気は気流規制板41を介してその裏側
の空間(循環ダクト部4の一部)に入り、第2の送風フ
ァン45により排気ダクト部44より工場排気ダクトに
排気される。
When the heat treatment process is completed and the unloading process is started, the controller 7 operates in the first mode, that is, the clean air supply, from this point until the removal of the wafer W from the wafer boat 32 is completed. Select a mode. In the second mode, the first blower fan 43 is turned off, the second blower fan 45 is turned on, the opening / closing valve 63 is open, the shutter 40 is closed, and the clean air supply source 64 is provided.
Clean air is sent to the air supply pipes 60 to 62, and is supplied into the transfer chamber 3 through the blowout holes 6 of the air supply pipes 60 to 62. This air enters the space on the back side (a part of the circulation duct part 4) via the air flow restricting plate 41, and is exhausted from the exhaust duct part 44 to the factory exhaust duct by the second blower fan 45.

【0024】このような実施例によればウエハWがアン
ロードされ、高温のウエハWからの輻射熱により除塵フ
ィルタ部5が相当高い温度に加熱されても、循環ダクト
部4の通流を止め、清浄空気供給源64より除塵フィル
タ部5を通さずに清浄空気を移載室3内に供給して気流
を形成しているため、除塵フィルタ部5の濾紙からのボ
ロンなどの不純物や接着剤からの有機成分の移載室3内
への飛散を防止しながら、移載室3内に発生したパーテ
ィクルを排出することができ、この結果ウエハWに対す
るパーティクルの付着及び除塵フィルタ部5からの不純
物の付着を防止することができる。
According to such an embodiment, even if the wafer W is unloaded and the dust removing filter section 5 is heated to a considerably high temperature by the radiant heat from the high temperature wafer W, the circulation duct section 4 is stopped from flowing. Since clean air is supplied from the clean air supply source 64 into the transfer chamber 3 without passing through the dust removal filter unit 5 to form an air flow, impurities such as boron from the filter paper of the dust removal filter unit 5 and adhesives Particles generated in the transfer chamber 3 can be discharged while preventing the organic components of the above from being scattered into the transfer chamber 3. As a result, the particles adhere to the wafer W and the impurities from the dust removal filter unit 5 Adhesion can be prevented.

【0025】そしてウエハWがウエハボート32から取
り出された後は、循環ダクト部4を通じて空気を循環さ
せて移載室3内に気流を形成し、清浄空気供給源64を
必要なときだけ使用しているので、コストアップを抑え
ることができる。なお清浄空気供給モードは、上述の工
程に加えて、ウエハボート32へのウエハWの移載及び
ローディング時に選択してもよい。
After the wafer W is taken out from the wafer boat 32, air is circulated through the circulation duct section 4 to form an air flow in the transfer chamber 3, and the clean air supply source 64 is used only when necessary. Therefore, the cost increase can be suppressed. The clean air supply mode may be selected at the time of transferring and loading the wafer W on the wafer boat 32 in addition to the above steps.

【0026】また本発明では、移載室3内の空気の循環
を停止したときに必ずしも清浄空気供給源から清浄空気
を供給しなくともよい。図5及び図6はこのような実施
例を示す図であり、制御部8は、ウエハボート32への
ウエハの移載、ローディング及び熱処理工程の間は送風
ファン43をオンとし、アンローディング、及びウエハ
ボート32からのウエハの取り出し工程の間は送風ファ
ン43をオフとして、除塵フィルタ部5内の通流を停止
するように構成されている。このような実施例では、ウ
エハWの輻射熱により除塵フィルタ部5が加熱されて
も、ここを空気が通流しないのでフィルタ部5からのボ
ロンや有機成分の飛散を抑えることができ、ウエハWに
対する悪影響を防止できる。
In the present invention, the clean air does not always have to be supplied from the clean air supply source when the circulation of the air in the transfer chamber 3 is stopped. FIG. 5 and FIG. 6 are views showing such an embodiment, in which the control unit 8 turns on the blower fan 43 during the transfer of the wafer to the wafer boat 32, the loading and the heat treatment process, unloading, and During the process of taking out the wafer from the wafer boat 32, the blower fan 43 is turned off to stop the flow of air in the dust removal filter section 5. In such an embodiment, even if the dust removing filter portion 5 is heated by the radiant heat of the wafer W, air does not flow through the dust removing filter portion 5, so that the scattering of boron and organic components from the filter portion 5 can be suppressed and the wafer W can be prevented. It is possible to prevent adverse effects.

【0027】以上において本発明では、清浄空気供給モ
ード(第1のモード)にて清浄空気を移載室3内に通流
させる場合、例えば図2の装置全体図において装置の背
面側に空気供給管を配設してもよい。また移載室3内の
気流は空気に限らず、例えば移載室3をロードロック室
とし、窒素ガスなどで形成してもよい。なお本発明は、
酸化処理に限らず拡散処理、CVD処理、エッチング処
理などのバッチ式の熱処理装置に対して適用することが
できる。
In the above, in the present invention, when the clean air is made to flow into the transfer chamber 3 in the clean air supply mode (first mode), for example, the air is supplied to the rear side of the device in the overall view of the device in FIG. A tube may be provided. Further, the air flow in the transfer chamber 3 is not limited to air, and for example, the transfer chamber 3 may be a load lock chamber and may be formed of nitrogen gas or the like. The present invention is
The present invention can be applied not only to the oxidation treatment but also to a batch type heat treatment apparatus such as a diffusion treatment, a CVD treatment and an etching treatment.

【0028】[0028]

【発明の効果】以上のように本発明によれば、除塵フィ
ルタ部を備えた循環用通気路を通じて移載室内に気流を
形成する熱処理装置において、必要に応じて循環用通気
路による通風を止めて、その代りに別途の清浄気体供給
源から除塵フィルタ部を通さずに清浄気体を移載室内に
供給しているので(請求項1の発明)、あるいは清浄気
体の供給は行わないが、循環用通気路による通風を必要
に応じて止めているので(請求項2の発明)、熱処理後
の被処理体の輻射熱により除塵フィルタ部が加熱されて
も、除塵フィルタ部から飛散する不純物の悪影響を低減
することができる。
As described above, according to the present invention, in the heat treatment apparatus for forming the air flow in the transfer chamber through the circulation air passage having the dust removing filter portion, the ventilation by the circulation air passage is stopped as necessary. Instead, the clean gas is supplied from a separate clean gas supply source to the transfer chamber without passing through the dust removal filter section (invention of claim 1), or the clean gas is not supplied but is circulated. Since the ventilation through the ventilation passage is stopped as necessary (the invention of claim 2), even if the dust filter section is heated by the radiant heat of the object to be treated after the heat treatment, the adverse effect of the impurities scattered from the dust filter section is prevented. It can be reduced.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例を示す縦断面図である。FIG. 1 is a vertical sectional view showing an embodiment of the present invention.

【図2】本発明の実施例に係る縦型熱処理装置の全体構
成を示す斜視図である。
FIG. 2 is a perspective view showing an overall configuration of a vertical heat treatment apparatus according to an embodiment of the present invention.

【図3】本発明の実施例の要部を示す斜視図である。FIG. 3 is a perspective view showing a main part of an embodiment of the present invention.

【図4】処理工程と気流形成モードとの関係を示す説明
図である。
FIG. 4 is an explanatory diagram showing a relationship between a processing step and an air flow forming mode.

【図5】本発明の他の実施例を示す縦断面図である。FIG. 5 is a vertical sectional view showing another embodiment of the present invention.

【図6】本発明の他の実施例に係る処理工程と気流形成
モードとの関係を示す説明図である。
FIG. 6 is an explanatory diagram showing a relationship between a treatment process and an air flow forming mode according to another embodiment of the present invention.

【図7】従来の熱処理装置を示す略解断面図である。FIG. 7 is a schematic sectional view showing a conventional heat treatment apparatus.

【符号の説明】[Explanation of symbols]

2 熱処理炉 21 ウエハキャリア載置台 3 移載室 32 ウエハボート 4 循環ダクト部 42 シャッタ開閉機構 S シャッタ 43、45 送風ファン 5 除塵フィルタ部 60〜62 空気供給管 63 開閉弁 64 清浄空気供給源 W 半導体ウエハ 2 Heat treatment furnace 21 Wafer carrier mounting table 3 Transfer chamber 32 Wafer boat 4 Circulation duct part 42 Shutter opening / closing mechanism S Shutter 43, 45 Blower fan 5 Dust filter part 60-62 Air supply pipe 63 Open / close valve 64 Clean air supply source W Semiconductor Wafer

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 被処理体を被処理体保持具に保持させて
移載室から反応管内に対して搬入、搬出し、吸い込み口
及び吹き出し口が移載室に開口すると共に除塵フィルタ
部を備えた循環用通気路を通じて、移載室内の気体を循
環させる熱処理装置において、 清浄気体の供給源と、 この供給源からの清浄気体を前記除塵フィルタ部を通さ
ずに移載室内に供給するための供給路と、 この供給路に設けられた開閉弁と、 この開閉弁を開くと共に循環用通気路の通気を停止する
第1のモードと、 前記開閉弁を閉じると共に循環用通気路の通気を行う第
2のモードとの間で通気モードの切り換えを制御する制
御部と、 を設けたことを特徴とする熱処理装置。
1. An object to be processed is held by an object-to-be-processed holder and carried in and out from a transfer chamber to and from a reaction tube, and a suction port and a blowing port are opened to the transfer chamber and a dust removal filter section is provided. In a heat treatment apparatus that circulates gas in the transfer chamber through the circulation ventilation passage, a clean gas supply source and a clean gas from the supply source are supplied to the transfer chamber without passing through the dust filter section. A supply path, an opening / closing valve provided in the supply path, a first mode in which the opening / closing valve is opened and ventilation of the circulation ventilation path is stopped, and the opening / closing valve is closed and ventilation of the circulation ventilation path is performed. A heat treatment apparatus comprising: a control unit that controls switching of the ventilation mode between the second mode and the second mode.
【請求項2】 被処理体を被処理体保持具に保持させて
移載室から反応管内に対して搬入、搬出し、吸い込み口
及び吹き出し口が移載室に開口すると共に除塵フィルタ
部を備えた循環用通気路を通じて、移載室内の気体を循
環させる熱処理装置において、 少なくとも反応管より被処理体保持具を搬出した後、被
処理体保持具より被処理体を取り出すまでの間は循環用
通気路の通気を停止するように制御を行う制御部を設け
たことを特徴とする熱処理装置。
2. An object to be processed is held by an object-to-be-processed holder and carried into and out of a reaction tube from a transfer chamber, a suction port and a blow-out port are opened to the transfer chamber, and a dust removal filter section is provided. In the heat treatment device that circulates the gas in the transfer chamber through the circulation ventilation path, at least until the object to be processed is removed from the reaction tube after the object to be processed is taken out from the reaction tube. A heat treatment apparatus comprising a control unit for performing control so as to stop ventilation of an air passage.
JP34142593A 1993-12-10 1993-12-10 Heat treatment equipment Expired - Lifetime JP3402713B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP34142593A JP3402713B2 (en) 1993-12-10 1993-12-10 Heat treatment equipment
TW083111244A TW273574B (en) 1993-12-10 1994-12-02
US08/353,288 US5551984A (en) 1993-12-10 1994-12-05 Vertical heat treatment apparatus with a circulation gas passage
KR1019940033374A KR100269413B1 (en) 1993-12-10 1994-12-09 Heat treatment apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34142593A JP3402713B2 (en) 1993-12-10 1993-12-10 Heat treatment equipment

Publications (2)

Publication Number Publication Date
JPH07161656A true JPH07161656A (en) 1995-06-23
JP3402713B2 JP3402713B2 (en) 2003-05-06

Family

ID=18345979

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34142593A Expired - Lifetime JP3402713B2 (en) 1993-12-10 1993-12-10 Heat treatment equipment

Country Status (1)

Country Link
JP (1) JP3402713B2 (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002191901A (en) * 2000-12-22 2002-07-10 Tokyo Electron Ltd Treatment apparatus and method for trapping impure substance
JP2007095879A (en) * 2005-09-28 2007-04-12 Hitachi Kokusai Electric Inc Substrate processing equipment
JP2008117868A (en) * 2006-11-01 2008-05-22 Hitachi Kokusai Electric Inc Substrate processing apparatus, and manufacturing method of semiconductor device
JP2008141176A (en) * 2006-11-06 2008-06-19 Hitachi Kokusai Electric Inc Substrate processing apparatus and method for manufacturing the same
US20090191717A1 (en) * 2008-01-24 2009-07-30 Ki-Hyun Kim Atomic layer deposition apparatus
JP2010103545A (en) * 2007-08-14 2010-05-06 Hitachi Kokusai Electric Inc Substrate processing apparatus
US7935185B2 (en) 2004-09-21 2011-05-03 Kabushiki Kaisha Toshiba Film forming system and film forming method
JP2012094805A (en) * 2010-06-14 2012-05-17 Hitachi Kokusai Electric Inc Substrate processing device
US8443484B2 (en) 2007-08-14 2013-05-21 Hitachi Kokusai Electric Inc. Substrate processing apparatus
US9460945B2 (en) 2006-11-06 2016-10-04 Hitachi Kokusai Electric Inc. Substrate processing apparatus for semiconductor devices
JP2018206875A (en) * 2017-05-31 2018-12-27 Tdk株式会社 Introduction method of replacement gas to efem and efem

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002191901A (en) * 2000-12-22 2002-07-10 Tokyo Electron Ltd Treatment apparatus and method for trapping impure substance
US7935185B2 (en) 2004-09-21 2011-05-03 Kabushiki Kaisha Toshiba Film forming system and film forming method
JP2007095879A (en) * 2005-09-28 2007-04-12 Hitachi Kokusai Electric Inc Substrate processing equipment
JP2008117868A (en) * 2006-11-01 2008-05-22 Hitachi Kokusai Electric Inc Substrate processing apparatus, and manufacturing method of semiconductor device
JP2008141176A (en) * 2006-11-06 2008-06-19 Hitachi Kokusai Electric Inc Substrate processing apparatus and method for manufacturing the same
US9460945B2 (en) 2006-11-06 2016-10-04 Hitachi Kokusai Electric Inc. Substrate processing apparatus for semiconductor devices
JP2010103545A (en) * 2007-08-14 2010-05-06 Hitachi Kokusai Electric Inc Substrate processing apparatus
US8443484B2 (en) 2007-08-14 2013-05-21 Hitachi Kokusai Electric Inc. Substrate processing apparatus
US20090191717A1 (en) * 2008-01-24 2009-07-30 Ki-Hyun Kim Atomic layer deposition apparatus
US8394201B2 (en) * 2008-01-24 2013-03-12 Samsung Electronics Co., Ltd. Atomic layer deposition apparatus
US8546270B2 (en) * 2008-01-24 2013-10-01 Samsung Electronics Co., Ltd. Atomic layer deposition apparatus
JP2012094805A (en) * 2010-06-14 2012-05-17 Hitachi Kokusai Electric Inc Substrate processing device
JP2018206875A (en) * 2017-05-31 2018-12-27 Tdk株式会社 Introduction method of replacement gas to efem and efem
US11145529B2 (en) 2017-05-31 2021-10-12 Tdk Corporation EFEM and method of introducing replacement gas thereinto

Also Published As

Publication number Publication date
JP3402713B2 (en) 2003-05-06

Similar Documents

Publication Publication Date Title
US5261167A (en) Vertical heat treating apparatus
KR101176238B1 (en) Heating process apparatus, heating process method, and computer readable storage medium
KR100907598B1 (en) Vertical heat treatment device and its control method
US20120083120A1 (en) Substrate processing apparatus and method of manufacturing a semiconductor device
JP3402713B2 (en) Heat treatment equipment
JP7105751B2 (en) processing equipment
KR100905262B1 (en) Substrate Processing Apparatus and Manufacturing Method for a Semiconductor Device
KR100602108B1 (en) Processing system
JP3334929B2 (en) Heat treatment equipment
KR20090002933A (en) Apparatus for processing a substrate having an air conditioning system
KR102452122B1 (en) Substrate processing apparatus, method of manufacturing semiconductor device and computer program
JP2004119888A (en) Semiconductor manufacturing apparatus
JP2005064242A (en) Processing system of substrate and heat-treatment method of substrate
KR20080011903A (en) Apparatus for transfering substrates, apparatus for treating substrates, and method for cooling substrates
JP2006093188A (en) Deposition system and deposition method
JP6951129B2 (en) Substrate processing equipment, programs and fluid circulation mechanisms, and methods for manufacturing semiconductor equipment
JP2002176045A (en) Heat treatment equipment and cooling method of loading chamber
JPH10141868A (en) Heat treatment device provided with sublimate measures
JP3670617B2 (en) Heat treatment apparatus and heat treatment method
JP3330169B2 (en) Vertical heat treatment equipment with gas shower nozzle
JP2929260B2 (en) Method and apparatus for forming coating film
JP6992156B2 (en) Manufacturing method of processing equipment, exhaust system, semiconductor equipment
JP3856726B2 (en) Semiconductor manufacturing equipment
JP3279727B2 (en) Heat treatment equipment
JP2002299262A (en) Load lock chamber and evacuation method therefor

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120229

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140228

Year of fee payment: 11

EXPY Cancellation because of completion of term