JPS6383275A - Cvd device - Google Patents
Cvd deviceInfo
- Publication number
- JPS6383275A JPS6383275A JP22905986A JP22905986A JPS6383275A JP S6383275 A JPS6383275 A JP S6383275A JP 22905986 A JP22905986 A JP 22905986A JP 22905986 A JP22905986 A JP 22905986A JP S6383275 A JPS6383275 A JP S6383275A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- processed
- wafer
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000001816 cooling Methods 0.000 claims abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000001301 oxygen Substances 0.000 claims abstract description 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 6
- 239000012495 reaction gas Substances 0.000 claims description 14
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 26
- 238000009792 diffusion process Methods 0.000 abstract description 10
- 239000000376 reactant Substances 0.000 abstract 2
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 27
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- LKILSWTYYBIIQE-PIXDULNESA-N 5-[(e)-2-chloroethenyl]-1-[(2r,4s,5r)-4-hydroxy-5-(hydroxymethyl)oxolan-2-yl]pyrimidine-2,4-dione Chemical compound C1[C@H](O)[C@@H](CO)O[C@H]1N1C(=O)NC(=O)C(\C=C\Cl)=C1 LKILSWTYYBIIQE-PIXDULNESA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、半導体ウェハ等の被処理基板にＣＶＤ［を形
成するＣＶＤ装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a CVD apparatus for forming CVD [on a substrate to be processed, such as a semiconductor wafer.
（従来の技術）
一般に、半導体ウェハ等の被処理基板の表面にＳ ｉ０
２ 、ＰＳＧ、ＢＳＧ等のＣＶＤ膜を形成するＣＶＤ装
置には、減圧ＣＶＤ装置、常圧ＣＶＤ装置、プラズマＣ
ＶＤ装置等の種々のＣＶＤ装置がある。(Prior art) Generally, Si0 is applied to the surface of a substrate to be processed such as a semiconductor wafer
2. CVD equipment for forming CVD films such as PSG and BSG includes low pressure CVD equipment, normal pressure CVD equipment, and plasma CCVD equipment.
There are various CVD devices such as VD devices.
これらの従来のＣＶＤ装置では、常圧あるいは減圧され
た処理室内に半導体ウェハ等の被処理基板を多数配置し
、これらの被処理基板を加熱するとともに、処理室内に
例えばＳｉＨ４とＰＨ３と０２あるいはＳｉＨ４と０２
等の所定の反応ガスを流通させ、バッチ方式あるいはイ
ンライン方式等により半導体ウェハ表面にＣＶＤ膜を形
成する。In these conventional CVD apparatuses, a large number of substrates to be processed, such as semiconductor wafers, are placed in a processing chamber under normal pressure or reduced pressure, and these substrates to be processed are heated. and02
A CVD film is formed on the surface of a semiconductor wafer by a batch method, an in-line method, or the like by passing a predetermined reaction gas such as the following.
またプラズマＣＶＤ装置では、これらの反応ガスをプラ
ズマ化して処理室内に流通させる。Further, in a plasma CVD apparatus, these reaction gases are turned into plasma and distributed within a processing chamber.
（発明が解決しようとする問題点）
しかしながら上記説明の従来のＣＶＤ装置では、処理室
内に流通される反応ガスを処理室内に配置された半導体
ウェハ等の被処理基板の表面に均一に供給することが困
雛であり、このため各半導体ウェハ間あるいは半導体ウ
ェハの表面の部位によって、形成されたＣＶＤ膜の膜厚
か不均一になるという問題があった。(Problems to be Solved by the Invention) However, in the conventional CVD apparatus described above, it is difficult to uniformly supply the reaction gas flowing into the processing chamber to the surface of the substrate to be processed, such as a semiconductor wafer, placed in the processing chamber. Therefore, there is a problem that the thickness of the CVD film formed becomes non-uniform between each semiconductor wafer or depending on the surface area of the semiconductor wafer.
本発明はかかる従来の事情に対処してなされたもので、
各半導体ウェハおよび半導体ウェハの表面全面に、均一
な膜厚でＣＶＤ膜を形成することのできるＣＶＤ装置を
提供しようとするものである。The present invention has been made in response to such conventional circumstances,
The present invention aims to provide a CVD apparatus capable of forming a CVD film with a uniform thickness on each semiconductor wafer and the entire surface of the semiconductor wafer.
［発明の構成］
（問題点を解決するための手段）
すなわち本発明のＣＶＤ装置は、被処理基板に酸素原子
ラジカルを含有するガスを噴射して成膜することを特徴
とする。[Structure of the Invention] (Means for Solving the Problems) That is, the CVD apparatus of the present invention is characterized in that a film is formed by injecting a gas containing oxygen atomic radicals onto a substrate to be processed.
（作 用〉
本発明のＣＶＤ装置では、酸素原子ラジカルを含有する
ガスを被処理基板に噴射することにより成膜する。この
手段として反応ガスとして０３ガスを用いた場合には、
被処理基板に例えば０．５乃至２０１Ｉｌｌ′Ｎ程度の
近接間隔で近接対向して配置され被処理基板へ向けて所
定の反応ガスを流出させるガス流出部と、このガス流出
部を冷却する手段と、被処理基板を加熱する手段とを備
えている。(Function) In the CVD apparatus of the present invention, a film is formed by injecting a gas containing oxygen atom radicals onto a substrate to be processed. When 03 gas is used as a reaction gas as this means,
A gas outflow section that is disposed close to and opposite to the substrate to be processed at a close interval of, for example, about 0.5 to 201 Ill'N, and that flows out a predetermined reaction gas toward the substrate to be processed; and a means for cooling the gas outflow section. , and means for heating the substrate to be processed.
したがって、ガス流出部と半導体ウェハ等の被処理基板
との間に形成されたギャップが、均一なガス濃度の反応
空間となり、各被処理基板全面に均一なＣＶＤ膜を形成
することができる。Therefore, the gap formed between the gas outlet and the substrate to be processed, such as a semiconductor wafer, becomes a reaction space with a uniform gas concentration, and a uniform CVD film can be formed over the entire surface of each substrate to be processed.
また、所定の反応ガスは、冷却されたガス流出部から加
熱された被処理基板へ向けて流出されるので、高温にお
いて分解されやすい反応ガスでも被処理基板に供給され
る直前まで分解されることがなく反応ガスを有効に使用
することかでき、高速な成膜速度で処理を行なうことが
できる。In addition, since the predetermined reaction gas is discharged from the cooled gas outlet toward the heated substrate to be processed, even the reaction gas that is easily decomposed at high temperatures can be decomposed until just before it is supplied to the substrate to be processed. The reaction gas can be used effectively, and the process can be performed at a high film formation rate.
（実施例）
以下、本発明のＣＶＤ装置を図面を参照して実施例につ
いて説明する。(Example) Hereinafter, an example of the CVD apparatus of the present invention will be described with reference to the drawings.
第１図および第４図は本発明の一実施例のＣＶＤ装置を
示すもので、この実施例のＣＶＤ装置では、処理室１１
内には、例えば真空チャック等により半導体ウェハ１２
を吸着保持する載置台１３が配置されており、この載置
台１３は、温度制御装置１４によって制御されるし−タ
１５を内蔵し、昇降装Ｗ１６により上下に移動自在とさ
れている。1 and 4 show a CVD apparatus according to an embodiment of the present invention. In the CVD apparatus of this embodiment, a processing chamber 11
Inside, a semiconductor wafer 12 is held, for example, by a vacuum chuck or the like.
A mounting table 13 is disposed for suctioning and holding the temperature.
載置台１３」一方には、円錐形状に形成されたコーン部
１７ａと、このコーン部１７ａの開口部に配置され、第
３図にも示すように、例えば金属あるいはセラミック等
の焼結体からなる拡散板１７ｂとから構成されるガス流
出部１７が配置されており、ガス流出部１７は、冷却装
置１８からコーン部１７ａの外側に配置された配管１８
ａ内を循環される冷却水等により冷却されている。The mounting table 13 has a cone portion 17a formed in a conical shape on one side, and is disposed in the opening of the cone portion 17a, and is made of a sintered body of metal or ceramic, for example, as shown in FIG. A gas outflow section 17 is arranged, which includes a diffusion plate 17b, and the gas outflow section 17 is connected from a cooling device 18 to a pipe 18 arranged outside the cone section 17a.
It is cooled by cooling water, etc., which is circulated within a.
そしてガス流出部１７は、それぞれガス流量調節器１．
９ ａ、１９ ｂ、１９ｃを備えたガス供給源２０ａ、
２０１）、２０ｃに接続されている。The gas outlet portions 17 each have a gas flow rate regulator 1.
a gas supply source 20a comprising 9a, 19b, 19c;
201) and 20c.
また、載置台１３の周囲には、この載置台１３の周囲を
囲むように例えばスリット状あるいは複数の開口からな
る排気口２１が配置されており、この排気口２１は、排
気装置２２に接続されている。Further, an exhaust port 21 having a slit shape or a plurality of openings, for example, is arranged around the mounting table 13 so as to surround the mounting table 13, and the exhaust port 21 is connected to an exhaust device 22. ing.
そして」１記構成のこの実施例のＣＶＤ装置では、次の
ようにしてＣＶＤを行なう。In the CVD apparatus of this embodiment having the configuration described in item 1, CVD is performed as follows.
すなわち、まず昇降装置１６によって載置台１３を下降
させ、ガス流出部１７との間に図示しないウェハ搬送装
置のアーム等が導入される間隔が設けられ、半導体ウェ
ハ１２がこのウェハ搬送装置等により載置台１３上に載
置され、吸着保持される。That is, first, the mounting table 13 is lowered by the lifting device 16, and a gap is provided between it and the gas outlet portion 17 in which an arm or the like of a wafer transfer device (not shown) is introduced, and the semiconductor wafer 12 is placed on the wafer transfer device or the like. It is placed on the mounting table 13 and held by suction.
この後、昇降装置１６によって載置台１３を上昇させ、
ガス流出部１７の拡散板１７ｂと、半導体ウェハ１２表
面との間隔が例えば０．５〜２０闘程度の所定の間隔に
設定される。なおこの場合、ガス流出部１７を昇降装置
によって上下動させてもよい。After that, the mounting table 13 is raised by the lifting device 16,
The distance between the diffusion plate 17b of the gas outlet portion 17 and the surface of the semiconductor wafer 12 is set to a predetermined distance of, for example, about 0.5 to 20 mm. In this case, the gas outlet portion 17 may be moved up and down by a lifting device.
半導体ウェハ１２が載置台１３」二に配置されるとガス
供給源２０ａ、２０ｂ、２０ｃから供給される酸素ガス
およびＳ ｉＨ４、ＰＨ３、Ｂ２ Ｈ６等の所定の反応
ガスが、少なくとも２種のガス流量調節器１．９ ａ、
１９ｂ、１９ｃにより流量を調節されて、ガス流出部１
７の拡散板１．７ｂから半導体ウェハ１２表面へ向けて
流出される。なおこの時、ｍ置台１３は、温度制御装置
１４およびヒータ１５により例えば２５０°Ｃ乃至５０
０℃程度に加熱され、半導体ウェハ１２を加熱する。こ
の加熱された半導体ウェハ１２の表面に流出噴射された
反応ガスは、酸素原子ラジカルを生成し、この生成した
酸素原子ラジカルと他の反応ガスとの反応により成膜す
る。ガス流出部１７は、冷却装置１８から配管１８ａ内
を循環される冷却水により冷却されている。この冷却は
、反応ガスが高温に晒されて反応により変化するのを防
止するためである。そして、排気装置２２により排気口
２１から排気を行ない、処理室１１内の気体圧力を７０
０〜２００Ｔｏｒｒ程度に設定する。When the semiconductor wafer 12 is placed on the mounting table 13, oxygen gas and predetermined reaction gases such as SiH4, PH3, B2H6, etc. supplied from the gas supply sources 20a, 20b, and 20c are supplied at least two kinds of gas flow rates. Regulator 1.9 a,
The flow rate is adjusted by 19b and 19c, and the gas outlet part 1
It flows out from the diffusion plate 1.7b of No. 7 toward the surface of the semiconductor wafer 12. At this time, the temperature control device 14 and the heater 15 control the m-mounting table 13 to a temperature of, for example, 250°C to 50°C.
The semiconductor wafer 12 is heated to about 0°C. The reactive gas discharged onto the surface of the heated semiconductor wafer 12 generates oxygen atomic radicals, and a film is formed by the reaction between the generated oxygen atomic radicals and other reactive gases. The gas outlet portion 17 is cooled by cooling water that is circulated through the pipe 18a from the cooling device 18. This cooling is to prevent the reaction gas from being exposed to high temperatures and changing due to reaction. Then, the exhaust device 22 exhausts air from the exhaust port 21 to reduce the gas pressure in the processing chamber 11 to 70%.
Set to about 0 to 200 Torr.
この時、第２図に矢印で示すように、ガス流出部１７の
拡散板］、７ｂから流出したガスは、拡散板１７ｂと半
導体ウェハ１２との間に形成された反応空間内で、半導
体ウェハ１２の中央部から周辺部へ向かうガスの流れを
形成する。ここで所定の反応ガスは、加熱された半導体
ウェハ１２およびその周囲の雰囲気により加熱され、化
学的な反応を起こし、半導体ウェハ１２の表面にＣＶＤ
Ｗｉ＆が形成される。At this time, as shown by the arrow in FIG. A gas flow is formed from the central part of 12 toward the peripheral part. Here, the predetermined reaction gas is heated by the heated semiconductor wafer 12 and the surrounding atmosphere, causing a chemical reaction, and causing CVD to occur on the surface of the semiconductor wafer 12.
Wi& is formed.
上記説明のこの実施例のＣＶＤ装置では、ガス流出部１
７と半導体ウェハ１２との間に形成されたギャップが、
均一なガス濃度の反応空間となり、各半導体ウェハ１２
全面に均一なＣＶＤＭを形成することができる。また、
所定の反応ガスは、冷却されたガス流出部１７から力ｉ
熱された半導体ウェハ１２へ向けて流出されるので、高
温において分解されやすい反応ガスでも半導体ウェハ１
２に供給される直前まで分解されることがなく反応ガス
を有効に使用することかでき、高速な成膜速度で処理を
行なうことができる。In the CVD apparatus of this embodiment described above, the gas outlet part 1
The gap formed between 7 and the semiconductor wafer 12 is
The reaction space has a uniform gas concentration, and each semiconductor wafer 12
A uniform CVDM can be formed over the entire surface. Also,
The predetermined reaction gas is supplied by a force i from the cooled gas outlet 17.
Since it flows out toward the heated semiconductor wafer 12, even reactive gases that are easily decomposed at high temperatures can be
Since the reaction gas is not decomposed until immediately before being supplied to the reactor gas 2, the reaction gas can be used effectively, and the process can be performed at a high film formation rate.
なお、この実施例では、所定の反応ガスの１つとして酸
素ガスを用いる場合について説明したが、例えば第４図
に示すように、酸素供給源２５がら供給される酸素ガス
内にオゾン発生器２６によってオゾンを発生させ、オゾ
ンを含む酸素ガスによってＣＶＤＵを形成するよう構成
してもよい。このようなオゾンは、高温とされると分解
が促進されるので、ガス流出部１７の温度は２５℃程度
とすることが好ましい。なお同図において前述の第１図
に示ずＣＶＤ装置と同一部分には、同一符号を付しであ
る。In this embodiment, the case where oxygen gas is used as one of the predetermined reaction gases has been described, but for example, as shown in FIG. The configuration may be such that ozone is generated by the above method, and the CVDU is formed using the oxygen gas containing ozone. Since the decomposition of such ozone is accelerated when the temperature is high, the temperature of the gas outlet portion 17 is preferably about 25°C. In this figure, the same parts as those of the CVD apparatus that are not shown in FIG. 1 are given the same reference numerals.
縦軸を成膜速度、横軸を半導体ウェハ１２の温度とした
第５図のグラフの実線Ａ、Ｂは、それぞれ第１図に示し
なＣＶＤ装置および第４図に示したオゾンを含む酸素ガ
スによってＣＶＤ膜を形成するＣＶＤ装置の成膜速度を
示している。このグラフかられかるように、オゾンを含
む酸素ガスを用いると、より低温で高速な成膜速度を得
ることができる。Solid lines A and B in the graph of FIG. 5, in which the vertical axis is the deposition rate and the horizontal axis is the temperature of the semiconductor wafer 12, represent the CVD apparatus shown in FIG. 1 and the ozone-containing oxygen gas shown in FIG. 4, respectively. shows the film forming speed of a CVD apparatus that forms a CVD film. As can be seen from this graph, when oxygen gas containing ozone is used, a faster film formation rate can be obtained at a lower temperature.
なお、これら実施例ではガス流出部１７を、円錐形状の
コーン部１７ａの開口部に金属あるいはセラミック等の
焼結体からなる拡散板１７ｂを配置して構成したが、本
発明は係る実施例に限定されるものではなく、例えば拡
散板１７ｂは、第６図に示すように多数の小孔３０ｃを
備えた拡散板３０ｂとしてもよく、第７図に示すように
複数の同心円状のスリット３１ ｃを備えた拡散板３１
． ｂ、第８図に示すように直線状のスリブＩ・３２
ｃを備えた拡散板３２ｂ、第９図に示すように大きさの
異なる小孔３３ｃを配置された拡散板３３ｂ、第１０図
に示すように渦巻状のスリット３４． ｃを備えた拡散
板３４ｂ等としてもよい。In addition, in these embodiments, the gas outlet portion 17 was constructed by arranging the diffusion plate 17b made of a sintered body of metal or ceramic at the opening of the conical cone portion 17a, but the present invention does not apply to such embodiments. For example, the diffusion plate 17b may include a plurality of small holes 30c as shown in FIG. 6, or a plurality of concentric slits 31c as shown in FIG. Diffusion plate 31 equipped with
．． b, straight sleeve I・32 as shown in Fig. 8;
c, a diffusion plate 33b having small holes 33c of different sizes as shown in FIG. 9, a spiral slit 34 as shown in FIG. It is also possible to use a diffuser plate 34b or the like provided with c.
［発明の効果］
上述のように本発明のＣＶＤ装置では、ガス流出部と半
導体ウェハ等の被処理基板との間に形成されたギャップ
が、均一なガス濃度の反応空間となり、各被処理基板全
面に均一なＣＶＤＰＡを形成することができる。また、
所定の反応ガスは、冷却されたガス流出部から加熱され
た被処理基板へ向けて流出されるので、例えばオゾン等
の高温において分解されやすい反応ガスでも被処理基板
に供給される直前まで分解されることがなく反応ガスを
有効に使用することができ、高速な成膜速度で処理を行
なうことができる。[Effects of the Invention] As described above, in the CVD apparatus of the present invention, the gap formed between the gas outlet and the substrate to be processed, such as a semiconductor wafer, becomes a reaction space with a uniform gas concentration, and each substrate to be processed is A uniform CVDPA can be formed over the entire surface. Also,
The predetermined reactive gas is discharged from the cooled gas outlet toward the heated substrate to be processed, so even reactive gases that are easily decomposed at high temperatures, such as ozone, are decomposed until just before they are supplied to the substrate to be processed. The reaction gas can be used effectively without any problems, and the process can be performed at a high film formation rate.
第１図は本発明の一実施例のＣＶＤ装置を示す構成図、
第２図は第１図の要部を示ず縦断面図、第３図は第１図
の要部を示す下面図、第４図は第１図のＣＶＤ装置の変
形例を示ず構成図、第５図は成膜速度と温度の関係を示
すグラフ、第６図〜第１０図は第３図の変形例を示す下
面図である。
１２・・・・・・半導体ウェハ、１７・・・・・・ガス
流出部、１４・・・・・・温度制御装置、１５・・・・
・・ヒータ、１８・・・・・・冷却装置。
出願人 東京エレクトロン株式会社代理人 弁理
士 須 由 佐 −
第６図FIG. 1 is a configuration diagram showing a CVD apparatus according to an embodiment of the present invention;
Fig. 2 is a vertical sectional view showing the main parts of Fig. 1, Fig. 3 is a bottom view showing the main parts of Fig. 1, and Fig. 4 is a configuration diagram without showing a modification of the CVD apparatus of Fig. 1. , FIG. 5 is a graph showing the relationship between film formation rate and temperature, and FIGS. 6 to 10 are bottom views showing modifications of FIG. 3. 12...Semiconductor wafer, 17...Gas outlet, 14...Temperature control device, 15...
...Heater, 18...Cooling device. Applicant Tokyo Electron Co., Ltd. Agent Patent Attorney Yusa Su - Figure 6
Claims (4)
噴射して成膜することを特徴とするＣＶＤ装置。(1) A CVD apparatus that forms a film by injecting a gas containing oxygen atomic radicals onto a substrate to be processed.
噴射する手段は、被処理基板に近接対向して配置され前
記被処理基板へ向けて所定の反応ガスを流出させるガス
流出部と、このガス流出部を冷却する手段と、前記被処
理基板を加熱する手段とを備えたものであることを特徴
とする特許請求の範囲第１項記載のＣＶＤ装置。(2) The means for injecting the gas containing oxygen atom radicals onto the substrate to be processed includes a gas outlet portion disposed close to and opposite to the substrate to be processed and which flows out a predetermined reaction gas toward the substrate to be processed; 2. The CVD apparatus according to claim 1, further comprising means for cooling the gas outlet and means for heating the substrate to be processed.
．５ｍｍ乃至２０ｍｍである特許請求の範囲第２項記載
のＣＶＤ装置。(3) The distance between the substrate to be processed and the gas outlet is 0.
．． The CVD apparatus according to claim 2, which has a diameter of 5 mm to 20 mm.
子ラジカルがオゾンを原料として生成することを特徴と
する特許請求の範囲第１項乃至第２項記載のＣＶＤ装置
。(4) The CVD apparatus according to any one of claims 1 to 2, wherein the gas containing oxygen atomic radicals is generated using ozone as a raw material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61229059A JPH062948B2 (en) | 1986-09-27 | 1986-09-27 | How to treat the object |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61229059A JPH062948B2 (en) | 1986-09-27 | 1986-09-27 | How to treat the object |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6310129A Division JP2751015B2 (en) | 1994-12-14 | 1994-12-14 | Processing method of the object |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6383275A true JPS6383275A (en) | 1988-04-13 |
| JPH062948B2 JPH062948B2 (en) | 1994-01-12 |
Family
ID=16886093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61229059A Expired - Lifetime JPH062948B2 (en) | 1986-09-27 | 1986-09-27 | How to treat the object |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH062948B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02194177A (en) * | 1989-01-23 | 1990-07-31 | Anelva Corp | Apparatus and method for producing thin film |
| JP2001152344A (en) * | 1999-11-29 | 2001-06-05 | Fujitsu Ltd | Chemical vapor deposition apparatus |
| KR100717583B1 (en) * | 2000-08-26 | 2007-05-15 | 주성엔지니어링(주) | Plasma enhanced chemical vapor deposition apparatus |
| US7740703B2 (en) * | 2003-03-18 | 2010-06-22 | Hitachi Cable, Ltd. | Semiconductor film formation device |
| US7775141B2 (en) | 2008-08-01 | 2010-08-17 | Snap-On Incorporated | Extended low-torque ratchet wrench |
| JP4542641B2 (en) * | 1999-05-24 | 2010-09-15 | 株式会社アルバック | Semiconductor manufacturing apparatus and barrier metal film forming method using this apparatus |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5976870A (en) * | 1982-10-25 | 1984-05-02 | Seiko Epson Corp | Formation of oxide film by chemical vapor deposition |
| JPS6085531A (en) * | 1983-10-17 | 1985-05-15 | Sony Corp | Formation of thin-film |
| JPS60131969A (en) * | 1983-12-20 | 1985-07-13 | Applied Material Japan Kk | Chemical vapor growth deposition device |
| JPS61110767A (en) * | 1984-10-31 | 1986-05-29 | Fujitsu Ltd | Cvd device |
-
1986
- 1986-09-27 JP JP61229059A patent/JPH062948B2/en not_active Expired - Lifetime
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5976870A (en) * | 1982-10-25 | 1984-05-02 | Seiko Epson Corp | Formation of oxide film by chemical vapor deposition |
| JPS6085531A (en) * | 1983-10-17 | 1985-05-15 | Sony Corp | Formation of thin-film |
| JPS60131969A (en) * | 1983-12-20 | 1985-07-13 | Applied Material Japan Kk | Chemical vapor growth deposition device |
| JPS61110767A (en) * | 1984-10-31 | 1986-05-29 | Fujitsu Ltd | Cvd device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02194177A (en) * | 1989-01-23 | 1990-07-31 | Anelva Corp | Apparatus and method for producing thin film |
| JP4542641B2 (en) * | 1999-05-24 | 2010-09-15 | 株式会社アルバック | Semiconductor manufacturing apparatus and barrier metal film forming method using this apparatus |
| JP2001152344A (en) * | 1999-11-29 | 2001-06-05 | Fujitsu Ltd | Chemical vapor deposition apparatus |
| KR100717583B1 (en) * | 2000-08-26 | 2007-05-15 | 주성엔지니어링(주) | Plasma enhanced chemical vapor deposition apparatus |
| US7740703B2 (en) * | 2003-03-18 | 2010-06-22 | Hitachi Cable, Ltd. | Semiconductor film formation device |
| US7775141B2 (en) | 2008-08-01 | 2010-08-17 | Snap-On Incorporated | Extended low-torque ratchet wrench |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH062948B2 (en) | 1994-01-12 |
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