JP2002141290A - System for producing semiconductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize a system for producing a semiconductor in which a film having enhanced uniformity in the film thickness, the dosage of impurities and the sheet resistance in the plane of a wafer can be deposited. SOLUTION: Diameter of a shower head 43 is set larger than the diameter of a wafer 1 but smaller than the diameter of a susceptor 31 within a range where gas ejection holes 431 exist. The gas ejection holes 431 are distributed such that the number of holes per unit area will be constant in the plane and the diameter of all ejection holes 431 is made identical thus making substantially uniform the gas ejection quantity. Furthermore, temperature at a part of the susceptor (supporting base) 31 facing the region, where the gas ejection holes 431 of the shower head 43 are formed, not through the wafer 1 is set in the range of 1.02-0.7 times of the absolute temperature of the wafer 1. According to the arrangement, film thickness can be made uniform while enhancing uniformity in the dosage of phosphorus.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for manufacturing a semiconductor, and more particularly to a semiconductor manufacturing apparatus for forming a film by doping impurities such as phosphorus by a single wafer type low-pressure thermal CVD apparatus.

[0002]

2. Description of the Related Art One of semiconductor integrated circuit manufacturing apparatuses is:
There is a low-pressure thermal CVD apparatus that introduces a gas into an apparatus maintained at a low pressure and forms a desired film on a heated wafer. FIG. 6 is a schematic configuration diagram of a general low-pressure thermal CVD apparatus.

In FIG. 6, a processing chamber 1 maintained in a vacuum
The wafer 101 is loaded into the device 02 through the gate valve 107. The loaded wafer 101 is heated by a heater 132.
On the support 131 heated by the heating.

The film is formed by supplying a gas from the gas inlet 141 to the wafer 101 via the shower head 143. The gas introduced from the gas inlet 141 is exhausted from the outlet 105. When a film having a desired thickness is formed, the introduction of the gas is stopped, and then the wafer 101 is carried out from the gate valve 107.

Here, when forming amorphous silicon or polysilicon while doping with phosphorus, the wafer is kept at about 580 ° C. to 700 ° C., and SiH ₄ , PH ₃ , H ₂ or N _{2 is} supplied from the gas inlet 141. _A film such as ₂ is introduced to form a film.

In such a film forming process, it is required to deposit a film having a uniform thickness and uniform characteristics on a wafer.

[0007] As a conventional example of the above-described semiconductor manufacturing apparatus, there is a technique described in Japanese Patent Application Laid-Open No. 9-45624. Japanese Patent Application Laid-Open No. 9-45624 discloses a method in which the diameter of a gas ejection surface of a support (support table) and a shower head portion is made substantially the same, and the film thickness is made uniform in the wafer surface. It has been disclosed.

Another example is disclosed in JP-A-11-25 / 1999.
There is one described in JP-A-6328. This Japanese Patent Application Laid-Open
In Japanese Patent Application Laid-Open No. 1-256328, the gas ejection hole (injection hole) of the shower head portion has a diameter (plane) of a wafer (object to be processed).
It is provided over a larger range. Then, except for the portion facing the wafer holding member provided on the peripheral portion of the wafer, the inside thereof is set so that the gas injection amount per unit area is substantially uniform, and the portion of the portion opposed to the wafer holding member is set. Some are set so that the gas injection amount per unit area is larger than the gas injection amount.

[0009] This is a method for improving the uniformity of the thickness of a metal thin film, a silicon oxide film, a silicon film, or the like.

[0010] The apparatus described in this publication improves the problem that the film thickness around the wafer is reduced when the film is formed under a supply-limiting condition in which the film forming speed mainly depends on the gas concentration. Has been stated.

That is, an effective method is used when the amount of gas consumed as a film on the wafer is greater than the amount of supplied gas, so that sufficient source gas is not supplied to the periphery of the wafer and the film thickness is reduced. Thus, the supply amount of gas to the peripheral portion of the wafer is increased to improve the uniformity of the film thickness.

[0012]

However, in the apparatus described in Japanese Patent Application Laid-Open No. 9-45624,
The range in which the gas outlets exist is wider than necessary.

As a result of examination by the inventors of the present application through experiments and simulations, the range in which gas ejection holes exist is as follows.
It has been found that a film having good film thickness uniformity can be formed even in a range narrower than that of the support base or the heater.

Further, in order to form a film having good film thickness uniformity, unless the value obtained by dividing the flow rate by the area of the range in which the gas ejection holes are present is not a fixed value or more, the film thickness at the peripheral portion of the wafer becomes thin. I understand.

Therefore, if the range in which the ejection holes are present is large,
It became clear that more gas was required to flow than necessary. This leads to a problem of wasteful consumption of gas and economic waste, and also leads to a problem of an increased adverse effect on the environment due to an increase in the amount of toxic gas used.

Further, the apparatus described in Japanese Patent Application Laid-Open No. 11-256328 has a problem that it is difficult to set conditions for making the film thickness uniform when the film forming temperature is changed. That is, when the film forming temperature is changed, the amount of gas consumed on the wafer changes, and the amount of gas to be compensated at the wafer peripheral portion changes.

However, in the method described in the above-mentioned publication, in which a large-diameter ejection hole is provided in the shower head portion facing the wafer outer peripheral portion to increase the gas supply amount to the wafer peripheral portion, the gas amount at the wafer peripheral portion and the wafer amount are increased. Since the amount of gas at the center cannot be controlled independently, it has been very difficult to find a gas flow rate that makes the film thickness uniform.

Further, when an impurity such as phosphorus is doped at the time of film formation, there is a problem that the doping amount becomes non-uniform. This means that the consumption of gas containing impurities is
This is because the consumption amount of the film forming gas is different from that of the film forming gas. Therefore, if a large amount of the gas is supplied at the peripheral portion of the wafer similarly to the film forming gas, the doping amount becomes non-uniform.

When the doping amount is non-uniform, the sheet resistance in the wafer surface becomes non-uniform as in the case where the film thickness is non-uniform, and a device having stable electric characteristics cannot be manufactured.

The present invention has been made in view of the above problems, and an object of the present invention is to improve the uniformity of the film thickness in the wafer surface and the uniformity of the doping amount of impurities, and further, the sheet resistance determined by these. An object of the present invention is to realize a semiconductor manufacturing apparatus capable of depositing a film with improved uniformity.

[0021]

To achieve the above object, the present invention is configured as follows. (1) A support table on which a wafer to be processed is placed, a heating unit for heating the wafer, and a heater that is installed substantially parallel to the support table and substantially parallel to the wafer arranged on the support table. A shower head having a plurality of gas ejection holes formed therein, wherein the diameter of a region of the shower head where the gas ejection holes are formed is larger than the diameter of the wafer having a predetermined dimension, and The plurality of gas ejection holes are made smaller than the diameter, and are processed so as to have substantially the same hole diameter.

(2) Preferably, in the above (1),
In the region where the gas ejection holes of the shower head are formed,
The absolute temperature of the portion of the support table facing without interposing the wafer is not more than 1.02 times the absolute temperature of the wafer and 0.7 or less.
More than double.

[0023]

FIG. 1 is a schematic sectional view of a processing chamber of a semiconductor manufacturing apparatus according to an embodiment of the present invention. In FIG. 1, a heating unit 3 is provided in a processing chamber 2,
Above the heating unit 3, a gas supply unit 4 for introducing a gas is formed.

An exhaust port 5 is formed on the bottom of the processing chamber 2, and a loading / unloading port 6 for the wafer 1 and a gate valve 7 are formed on the side of the processing chamber 2. The processing chamber 2 is isolated from the atmosphere.

A pressure adjusting valve (not shown) and a vacuum pump are connected to the exhaust port 5 so that the pressure in the processing chamber 2 can be adjusted.

The heating unit 3 is provided from the gas supply unit 4 side.
A disk-shaped susceptor (a support table on which the wafer 1 is mounted) 31, a disk-shaped heater 32, and a cylindrical side wall 33 are provided. The cover ring 8 is formed on the disc-shaped susceptor 31, and the wafer 1 is arranged on the inner peripheral side of the cover ring 8.

In the illustrated example, the inside diameter of the cover ring 8 is substantially the same as the diameter of the wafer 1 and the wafer 1 and the cover ring 8 do not overlap. The inner diameter may be smaller than the diameter of the wafer 1 so as to overlap the end of the wafer 1, or may be larger than the diameter of the wafer 1.

The gas supply unit 4 includes an inlet 41 and a dispersion plate 4.
2, a shower head 43, a source gas is introduced from the inlet 41, and the gas is supplied to the wafer 1 via the dispersion plate 42 and the shower head 43.

In the illustrated example, one dispersion plate 42 is shown. However, depending on the film forming conditions (flow rate, pressure, etc.), there may be a case where a plurality of dispersion plates 42 are provided, and when the dispersion plates 42 are not provided. There is also.

The dispersion plate 42 and the shower head 43
Are formed with a number of gas ejection holes 421 and 431. In the shower head 43, the diameter of the area where the gas ejection holes 431 exist is larger than the diameter of the wafer 1 and smaller than the diameter of the circular susceptor 31 or the heater 32.

Specifically, the diameter is larger than the diameter of the wafer 1,
[Diameter of wafer 1] + [distance between wafer 1 and shower head 43] × 2 or within [wafer 1
Diameter] + [Distance between centers of two closest jet holes 431]
The dimension determined by × 2 was defined as the diameter of the range in which the gas ejection holes 431 existed.

The distance between the gas ejection holes 431 is equal to or less than the distance between the wafer 1 and the shower head 43 and is not less than 1/5. In addition, diameter φ300mm
In the semiconductor manufacturing apparatus according to the first embodiment of the present invention, which forms a film on the wafer 1, the diameter of the susceptor 31 is 380 m.
m, the diameter of the heater 32 is 340 mm, and the shower head 4
The area where the three gas ejection holes 431 exist is 320 m in diameter.
m, the inner diameter of the cover ring 8 is 300 mm.

The total gas flow rate is 1 sccm / cm ² to 30 sccm / cm ² , preferably 3 sccm / cm ² to 15 sccm / cm, obtained by dividing the total flow rate by the area of the shower head 43 where the gas ejection holes 431 exist. ^The gas is supplied from the inlet 41 so as to be ² .

In the case of the semiconductor manufacturing apparatus according to one embodiment of the present invention, a total gas flow of 1000 sccm to 1500 sccm is flowed. When the wafer 1 is heated to 650 ° C. to form a film, the temperature of the portion of the cover ring 8 having a diameter of 300 mm to 320 mm is set to 455 ° C. or more and 660 ° C. or less, preferably, a difference from the temperature of the wafer 1. To within 10 ° C.

Here, since the heat of the cover ring 8 is more likely to escape from the portion of the wafer 1, the temperature of the heater 32 at the portion facing the cover ring 8 is set higher than the temperature of the portion at the portion facing the wafer 1. Is made of a material having a small thermal conductivity and emissivity so that heat cannot escape easily, so that the temperature is maintained.

Conversely, when the temperature of the cover ring 8 becomes higher than the above-mentioned temperature, the heater 32 in the portion facing the cover ring 8 may be lowered, or the material of the cover ring 8 may be changed in heat conductivity or emissivity. You can change it to something larger.

The shower head 43 receives heat from the wafer 1 and the susceptor 31 and rises in temperature. Therefore, the shower head 43 is cooled to 200 ° C. or lower by a cooling mechanism (not shown). The distance between the shower head 43 and the wafer 1 is 20 mm or less.

Next, the processing procedure of the wafer 1 will be described. First, before the wafer 1 is introduced into the processing chamber 2, the heating unit 3 is heated by the heater 32 in advance and the susceptor 3 is heated.
1 is heated to a predetermined temperature.

At the same time, an inert gas such as N _{2 is} introduced from the gas inlet 41 through the dispersion plate 42 and the shower head 43 so that the pressure in the processing chamber 2 becomes substantially the same as that during film formation. An inert gas is supplied into the processing chamber 2.

Next, the wafer 1 placed on the transfer jig (not shown) is loaded into the processing chamber 2 through the loading / unloading port 6 and the transfer jig is lowered on the heating unit 3 to raise the wafer 1 (not shown). After being transferred onto the pins, the transfer jig is retracted out of the processing chamber 2.

Next, the push-up pins are lowered, and the wafer 1 is set on the susceptor 31.
Heat with 1. When the wafer 1 is at a predetermined temperature (550 ° C. to 750 ° C. when the silicon film is doped with phosphorus)
° C), and instead of an inert gas, a source gas (Si in the case of a silicon film doped with phosphorus,
H ₄ , PH ₃ , H ₂ or N ₂ ) is introduced from the upper inlet 41 and supplied to the wafer 1 via the dispersion plate 42 and the shower head 43.

The gas that has passed through the shower head 43 flows in a direction substantially parallel to the wafer 1, and is then exhausted from an exhaust port 5 provided on the bottom surface of the processing chamber 2.

Then, the pressure (total pressure) in the processing chamber 2 is adjusted to a predetermined value by a pressure adjusting valve (not shown), and when a film having a desired thickness is deposited, the introduction of the source gas is stopped. The inert gas is supplied again from the shower head 43. After the inside of the processing chamber 2 is replaced with the inert gas, the wafer 1 is unloaded from the loading / unloading port 6 in a procedure opposite to the loading procedure.

Next, the reason why a film can be formed with good uniformity of film thickness and uniformity of sheet resistance by forming a film by the above-described method is that monosilane (SiH ₄ ) and phosphine (PH ₃ ).
An example in which an amorphous silicon (or polysilicon) film doped with phosphorus by introducing nitrogen and nitrogen (N ₂ ) is formed will be described.

At the time of film formation, monosilane is directly transferred to the wafer 1
Reacts with the surface to form a film. On the other hand, in a high temperature gas phase, an active gas, that is, silylene (SiH ₂ ) having a higher probability of adhering to the wafer 1 than monosilane is generated. The probability of adhesion of monosilane is 10 ⁻⁵ to 10 ⁻⁷ at 650 ° C., whereas the probability of adhesion of silylene is approximately 1.0 irrespective of temperature.
And very high.

For this reason, when silylene is generated in the gas phase, it is immediately deposited on the surface of the nearby wafer 1 and consumed.
The film forming speed changes sensitively according to the gas concentration of silylene. Therefore, when a large amount of silylene is generated in the gas phase and silylene mainly contributes to the film formation, the film formation rate is controlled by the supply rate mainly depending on the gas concentration of silylene.

On the other hand, in the case of monosilane, the adhesion probability is small, so that the ratio of consumption to the supply amount is small. When monosilane mainly contributes to film formation, the film formation rate is mainly increased. The reaction rate is dependent on the temperature of the wafer 1.

FIG. 2 is a diagram showing a result of a simulation of a temperature distribution (isothermal diagram) of a space interposed between the shower head 43 and the wafer 1 when a film is formed under the above conditions. Note that T1, T2, T3, and T4 represent temperatures,
The relationship is T1>T2>T3> T4.

As shown in FIG. 2, even if the temperature of the wafer 1 itself is uniform up to the peripheral edge, the space temperature above the peripheral edge of the wafer 1 is lower than that of the wafer 1 because the temperature of the cover ring 8 is lower than that of the wafer 1. Lower than the space temperature in the center.

Therefore, the amount of silylene generated at the peripheral portion of the wafer 1 is smaller than that at the central portion of the wafer 1, and the film formation speed of the silylene decreases at the peripheral portion of the wafer 1. However, in the case of monosilane, as described above, since the film formation rate mainly depends on the temperature of the wafer 1, the film formation rate does not decrease even at the peripheral portion.

Now, in the semiconductor manufacturing apparatus according to one embodiment of the present invention, the shower head 43 is set at 200 ° C. or less,
Since the distance between the wafer 1 and the showerhead 43 is set to 20 mm or less, the high-temperature region in the gas phase is narrow, and silylene is hardly generated.

Therefore, the gas that mainly contributes to the film formation is monosilane as a source gas, and the film formation rate is controlled by the reaction mainly depending on the temperature of the wafer 1.

For this reason, the problem that the film formation rate at the peripheral portion of the wafer 1 is reduced under the supply-controlling rate, which is a problem in Japanese Patent Application Laid-Open No. H11-256328, does not occur. For example, the film thickness on the surface of the wafer 1 becomes uniform.

Next, phosphorus doping will be described. Phosphine (PH ₃ ) as a source gas does not itself adsorb to the surface of the wafer 1, but becomes an intermediate such as PH in a gas phase and then adsorbs to the surface of the wafer 1. The adhesion probability of the intermediate is about 10 ^-4 , which is slightly larger than that of monosilane.

FIG. 3 is a graph showing the distribution of the doping rate of phosphorus to a wafer having a diameter of 300 mm under various conditions. FIG. 4 is a diagram schematically showing the conditions (structure and temperature) of FIGS. 3A to 3E.

3A and FIG. 4A, the temperature of the wafer 1 is 650 ° C. and the temperature of the covering 8 is 2 ° C.
This is the case where the temperature is set to 00 ° C.

The ejection holes 431 of the shower head 43 are provided only in the surface facing the wafer 1, and the number of ejection holes per unit area is formed to be the same in the same plane. All are processed to be the same.

In this case, since the temperature of the cover ring 8 is low, the temperature of the peripheral upper space of the wafer 1 becomes lower than the temperature of the central upper space of the wafer 1, and the amount of intermediates produced is reduced. The doping rate decreases.

Therefore, in FIG.
The flow rate of the phosphine supplied from the ejection hole 431 at the portion opposing from 0 mm to 300 mm was set to be twice that of the other portions.
Other conditions are the same as (a).

As the phosphine supply amount increases, the amount of intermediate at the peripheral portion of the wafer 1 increases, and the doping speed at the peripheral portion of the wafer 1 increases as compared with the case (a). There is no change in the tendency of the speed to decrease.

Then, next, in (c), covering
8, the temperature of the portion having a diameter of 300 mm to 320 mm is 640 ° C. or more and 650 ° C., and the temperature of the portion having a diameter of 320 mm to 340 mm is 600 ° C. or more and 640 ° C.
It was as follows.

The supply amount of phosphine is uniform,
The jet holes 431 of the shower head 8 are the same as before.
It is only in the plane facing the wafer 1. As shown in the figure, the doping rate increases at the peripheral portion of the wafer 1, contrary to the cases (a) and (b).

This is because the temperature of the peripheral space of the wafer 1 has increased due to the increase in the temperature of the covering 8, and the amount of the intermediate phosphine produced has increased. Is the outlet 431
Is not provided, the source gas is not supplied to the upper portion of the cover ring 8, that is, the material is not diluted by the source gas.

For this reason, the center of the wafer 1
The concentration of the intermediate at the periphery of was increased, and the doping rate was increased.

Therefore, in (d), the temperature distribution is the same as in (c), and the ejection holes 431 of the shower head 43 are provided in a range of 320 mm in diameter larger than the diameter of the wafer 1 and smaller than the diameter of the susceptor 31. Was. Other conditions are the same as in the case (a).

That is, this is the case of the present invention. By doing so, the amount of the intermediate at the peripheral portion of the wafer 1 becomes the same as that at the central portion of the wafer 1, and in the case of (d), phosphorus can be uniformly doped in the surface of the wafer 1 as shown in FIG. become.

Next, (e) simulates the case of the technique described in JP-A-9-45624. In the case of (e), since the range in which the ejection holes 431 exist is wider than in the case of (d), the gas flow per unit area from the shower head 43 is smaller than in the case of (d).

Therefore, when a gas having the same flow rate as in the case (d) flows, the flow velocity of the gas flowing between the shower head 43 and the wafer 1 becomes lower than in the case (d). When the flow rate is low, the amount of the intermediate that has moved downstream when the flow rate is high is deposited on the wafer 1 before moving to the downstream side, and as a result, the doping in the central portion of the wafer 1 is increased. In order to make the velocity uniform, the flow rate of the gas to be introduced should be (d)
You have to do more.

FIG. 5 shows the configuration shown in FIG.
FIG. 4 is a diagram showing a phosphorus doping rate distribution when the temperature of a cover ring 8 is changed. The doping rate distribution shown by the fine dotted line in FIG.
This is the case where the temperature in the range from mm to 320 mm is 1.02 times the temperature of the wafer 1. The doping rate distribution indicated by the rough dotted line in FIG.
This is the case when it is doubled. The velocity distribution indicated by the solid line in FIG.

In the temperature range as shown in FIG. 5, the doping rate only changes at a portion of about 10 mm on the periphery of the wafer 1. Further, as the temperature of the cover ring 8 is closer to the temperature of the wafer 1, the uniformity of the doping speed is improved, but there is a problem that a film is formed on the cover ring 8 as well as on the wafer 1.

When a large amount of film is formed on the cover ring 8, the formed film is peeled off and falls onto the wafer 1, and becomes a foreign substance and is mixed, thereby causing a defective device.

For this reason, the temperature of the covering 8 is determined from the allowable range of the doping uniformity and the allowable film formation amount on the covering 8.

As described above, that is, the following (1) to
By configuring so as to satisfy the condition (3), the uniformity of the doping amount of phosphorus can be improved together with the uniformity of the film thickness. (1) The diameter of the shower head 43 in a range where the gas ejection holes 431 are present is set to be larger than the diameter of the wafer 1 and smaller than the diameter of the susceptor 31. (2) The number of holes per unit area of the ejection holes 431 of the shower head 43 is distributed so as to be equal in the plane, and the diameters of the ejection holes 431 are all processed to be the same, so that the gas ejection amount is substantially reduced. Be uniform. (3) The temperature of the portion of the susceptor (support table) 31 which faces the region of the shower head 43 where the gas ejection holes 431 are formed without interposing the wafer 1 is set to 1.
It is set so as to be not more than 02 times and not less than 0.7 times.

Here, in the above (1), the diameter of the range in which the gas ejection holes 431 of the shower head 43 are provided is as follows:
Dimension obtained by [diameter of wafer 1] + [distance between wafer 1 and shower head 43] or [diameter of wafer 1] + [distance between centers of two nearest ejection holes 431] × 2
May be determined by the following formula.

As described above, according to the embodiment of the present invention, the uniformity of the film thickness in the wafer surface and the uniformity of the doping amount of the impurities are improved, and the uniformity of the sheet resistance determined by these is improved. Film can be deposited,
An object of the present invention is to realize a semiconductor manufacturing apparatus capable of producing a device having uniform electric characteristics.

In the above-described embodiment, an example in which SiH ₄ , PH ₃ , and H ₂ are mainly used as the source gas has been described, but the source gas is not limited to this. The method of the present invention is also effective when Si ₂ H ₆ is used as another silicon-containing gas.

Further, chlorine-containing SiCl ₂ H ₂ , SiC
The present invention is also effective for gases such as l ₃ H and SiCl ₄ . Further, N ₂ may be introduced instead of H ₂ . As the doping gas, a gas containing phosphorus other than PH ₃ or a gas containing boron or arsenic may be used.

Further, together with the silicon-containing gas, NH ₃ and N
_It can also be applied to the case where a gas such as ₂ O or H ₂ O is introduced to form a silicon nitride film or a silicon oxide film.

Generally, the present invention is more effective when applied to a reaction system in which an intermediate having a higher probability of adhering to a wafer than a source gas is generated in a gas phase.

In the above-described example, the cover ring 8 is provided. However, the present invention can be applied to a case where the cover ring 8 is not provided. In this case, similarly to the case where the temperature of the cover ring 8 is set to be 1.02 times or less and 0.7 times or more of the absolute temperature of the wafer 1, the gas ejection holes 43 of the shower head 43 are similarly provided.
The temperature of the portion of the susceptor (support table) 31 that faces the area where the wafer 1 is formed without interposing the wafer 1 is set to be 1.02 times or less and 0.7 times or more the absolute temperature of the wafer 1.

[0081]

According to the present invention, it is possible to improve the uniformity of the film thickness in the wafer surface and the uniformity of the doping amount of impurities, and further, to deposit a film having an improved sheet resistance uniformity determined by these. A semiconductor manufacturing apparatus capable of producing a device having uniform electric characteristics can be realized.

[0082]

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of a processing chamber of a semiconductor manufacturing apparatus according to an embodiment of the present invention.

[0083]

FIG. 2 is a diagram showing a temperature distribution in a space interposed between a shower head and a wafer.

[0084]

FIG. 3 is a graph showing a phosphorus doping rate distribution on a wafer when conditions are changed.

[0085]

FIG. 4 is a diagram schematically showing each analysis condition shown in FIG.

[0086]

FIG. 5 is a diagram showing a phosphorus doping rate distribution when the temperature of the covering is changed.

[0087]

FIG. 6 is a schematic configuration diagram of a conventional CVD apparatus.

[0088]

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Wafer 2 Processing chamber 3 Heating stage 4 Gas supply part 5 Exhaust port 6 Carry-in / out port 7 Gate valve 8 Covering 31 Susceptor 32 Heater 33 Side wall 41 Inlet 42 Dispersion plate 43 Shower head 421, 431 Gas ejection hole

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Satoshi Watanabe 502, Kandate-cho, Tsuchiura-shi, Ibaraki Pref. Machinery Research Laboratory, Hitachi, Ltd. (72) Inventor Masayoshi Yoshida 5-2-1, Josuihoncho, Kodaira-shi, Tokyo Hitachi, Ltd. Semiconductor Group (72) Inventor Mitsunori Ishizaka 3-14-20 Higashinakano, Nakano-ku, Tokyo (P'S Nakano Building) Kokusai Denki Co., Ltd. F-term (reference) 4K030 CA04 CA12 EA06 FA10 JA10 5F045 AA03 AB03 AB04 AC01 AC15 AC19 AD09 AD10 AD11 AE01 AF03 BB02 BB04 DA66 DP03 EF05 EK21 EM09

Claims (2)

[Claims] 1. A supporting table on which a wafer to be processed is placed, a heating section for heating the wafer, and a heating unit that is substantially parallel to the supporting table and substantially parallel to a wafer disposed on the supporting table. And a shower head provided with a plurality of gas ejection holes, wherein a diameter of a region of the shower head where the gas ejection holes are formed is larger than a diameter of the wafer having a predetermined dimension, and A semiconductor manufacturing apparatus having a diameter smaller than a diameter of a table, and wherein the plurality of gas ejection holes are machined to have substantially the same diameter. 2. The semiconductor manufacturing apparatus according to claim 1,
In the region where the gas ejection holes of the shower head are formed,
The absolute temperature of the portion of the support table facing without interposing the wafer is not more than 1.02 times the absolute temperature of the wafer and 0.7 or less.
A semiconductor manufacturing apparatus characterized in that the number is twice or more.