JPH0766139A - Chemical vapor deposition system - Google Patents
Chemical vapor deposition systemInfo
- Publication number
- JPH0766139A JPH0766139A JP21411593A JP21411593A JPH0766139A JP H0766139 A JPH0766139 A JP H0766139A JP 21411593 A JP21411593 A JP 21411593A JP 21411593 A JP21411593 A JP 21411593A JP H0766139 A JPH0766139 A JP H0766139A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction
- film
- supply chamber
- reaction gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、半導体装置の製造に
使用する化学気相成長装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical vapor deposition apparatus used for manufacturing semiconductor devices.
【０００２】[0002]
【従来の技術】化学気相成長（Ｃｈｅｍｉｃａｌ Ｖａ
ｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ(以下、ＣＶＤと称す)）
法は、気相での化学反応を利用して薄膜を形成する方法
である。ＣＶＤ装置は、従来はホットウォール方式で複
数枚のウエハを同時処理できるバッチタイプのものが使
用されていた。しかし、近年、半導体デバイスの高集積
化に伴い、装置内のガス流や壁面温度の制御性が良く、
高均一性および低パーティクルが期待できて高精度な成
膜が実現できる、コールドウォール方式でウエハを一枚
ずつ処理する枚葉タイプのＣＶＤ装置が主流になろうと
している。2. Description of the Related Art Chemical Vapor Deposition (Chemical Vapor)
por Deposition (hereinafter referred to as CVD))
The method is a method of forming a thin film by utilizing a chemical reaction in a gas phase. Conventionally, a CVD apparatus of a batch type that can simultaneously process a plurality of wafers by a hot wall method has been used. However, in recent years, with the high integration of semiconductor devices, the controllability of gas flow and wall surface temperature in the device has become better,
A single-wafer type CVD apparatus for processing wafers one by one by a cold wall method, which is expected to achieve high uniformity and low particles and realizes highly accurate film formation, is about to become mainstream.
【０００３】図６は、従来の枚葉タイプのＣＶＤ装置の
構造を示す断面図である。図において、１は被処理基板
としてのウエハ、２はウエハ１を加熱保持するステー
ジ、３はステージ２に内蔵されたヒーター、４は反応ガ
スを拡散してウエハ１に供給するガスヘッド拡散板、５
は反応室としての真空の反応チャンバ、６は反応チャン
バ５の排気口、７は排気口６に接続された真空ポンプ、
８は反応ガスを計量して反応チャンバ５内に供給するマ
スフローコントローラである。FIG. 6 is a sectional view showing the structure of a conventional single wafer type CVD apparatus. In the figure, 1 is a wafer as a substrate to be processed, 2 is a stage for heating and holding the wafer 1, 3 is a heater built in the stage 2, 4 is a gas head diffusion plate for diffusing a reaction gas and supplying it to the wafer 1, 5
Is a vacuum reaction chamber as a reaction chamber, 6 is an exhaust port of the reaction chamber 5, 7 is a vacuum pump connected to the exhaust port 6,
A mass flow controller 8 measures the reaction gas and supplies it into the reaction chamber 5.
【０００４】上記のようなＣＶＤ装置による成膜を、シ
リコン窒化膜（ＳｉｘＮｙ膜）を例として説明する。反
応ガスであるＳｉＨ4およびＮＨ3は、マスフローコント
ローラ８により精度良く計量され、配管内で混合されて
反応チャンバ５内に供給される。このＳｉＨ4とＮＨ3と
の混合ガスは、反応チャンバ５内でガスヘッド拡散板４
により拡散され、ステージ２上に加熱保持されたウエハ
１表面上にＳｉｘＮｙ膜を形成する。反応チャンバ５内
は、排気口６に接続された真空ポンプにより低圧に保た
れる。このときウエハ１温度は通常７００℃程度であ
り、ガスヘッド拡散板４および反応チャンバ５の壁面
は、ＳｉｘＮｙ膜等の反応生成物が形成されるのを防止
するため、コールドウォール方式で低温に保持される。
このため、ＳｉｘＮｙ膜は、ウエハ１表面における混合
ガスの反応により形成されるものである。Film formation by the above CVD apparatus will be described by taking a silicon nitride film (SixNy film) as an example. The reaction gases SiH 4 and NH 3 are accurately measured by the mass flow controller 8, mixed in a pipe and supplied into the reaction chamber 5. The mixed gas of SiH 4 and NH 3 is mixed in the reaction chamber 5 with the gas head diffusion plate 4
Then, a SixNy film is formed on the surface of the wafer 1 which is diffused by the above and is heated and held on the stage 2. The inside of the reaction chamber 5 is kept at a low pressure by a vacuum pump connected to the exhaust port 6. At this time, the temperature of the wafer 1 is usually about 700 ° C., and the wall surfaces of the gas head diffusion plate 4 and the reaction chamber 5 are kept at a low temperature by a cold wall method in order to prevent formation of reaction products such as a SixNy film. To be done.
Therefore, the SixNy film is formed by the reaction of the mixed gas on the surface of the wafer 1.
【０００５】[0005]
【発明が解決しようとする課題】従来のＣＶＤ装置は以
上のように構成されているため、成膜の際、混合された
反応ガスは低温の反応チャンバ５内でガスヘッド拡散板
４により拡散されてウエハ１上に供給され、ウエハ１表
面真上において急激に加熱されて分解し、膜を形成す
る。このため、反応ガスは十分な加熱分解をすることが
困難であり、反応ガスの未分解生成物がウエハ１表面に
到達して、それが、形成する膜の段差被覆性等の信頼性
を低下させるものであった。Since the conventional CVD apparatus is configured as described above, the mixed reaction gas is diffused by the gas head diffusion plate 4 in the low temperature reaction chamber 5 during the film formation. And is supplied onto the wafer 1 and is heated immediately above the surface of the wafer 1 to be decomposed to form a film. For this reason, it is difficult for the reaction gas to undergo sufficient thermal decomposition, and undecomposed products of the reaction gas reach the surface of the wafer 1, which reduces the reliability such as the step coverage of the film to be formed. It was something that caused it.
【０００６】この発明は、このような問題点を解消する
ためになされたものであって、コールドウォール方式で
枚葉タイプのＣＶＤ装置において、反応ガスが十分に加
熱分解でき、反応ガスの未分解生成物による悪影響の無
い良質な膜を、ウエハ表面に形成できるＣＶＤ装置を提
供することを目的とする。The present invention has been made in order to solve such problems, and in a single-wafer type CVD apparatus of the cold wall type, the reaction gas can be sufficiently decomposed by heating and the reaction gas is not decomposed. An object of the present invention is to provide a CVD apparatus capable of forming a high-quality film on the surface of a wafer that is not adversely affected by products.
【０００７】[0007]
【課題を解決するための手段】この発明の請求項１に係
る化学気相成長装置は、反応ガスを予め加熱してから反
応室へ供給するように、ヒーターを備えたガス供給チャ
ンバを具備するものである。A chemical vapor deposition apparatus according to claim 1 of the present invention comprises a gas supply chamber provided with a heater so that a reaction gas is heated in advance and then supplied to the reaction chamber. It is a thing.
【０００８】また、この発明の請求項２に係る化学気相
成長装置は、ガス供給チャンバ内に、仕切板を設けて反
応ガスのガス径路を増大させたものである。In the chemical vapor deposition apparatus according to the second aspect of the present invention, a partition plate is provided in the gas supply chamber to increase the gas path of the reaction gas.
【０００９】[0009]
【作用】この発明における化学気相成長装置は、ヒータ
ーを備えたガス供給チャンバを具備し、反応ガスを予め
加熱してから反応室へ供給する。このため反応ガスは、
ガス供給チャンバ内で十分に加熱分解してから反応室へ
供給されて、ウエハ表面に成膜する。このため、従来の
ようにウエハ表面真上で反応ガスが急激に加熱される場
合と違い、反応ガスの未分解生成分がウエハ表面に到達
して膜質を悪化させることがなく、良質な膜が形成でき
る。The chemical vapor deposition apparatus according to the present invention comprises a gas supply chamber equipped with a heater and preheats the reaction gas before supplying it to the reaction chamber. Therefore, the reaction gas is
After being sufficiently decomposed by heat in the gas supply chamber, the gas is supplied to the reaction chamber to form a film on the wafer surface. Therefore, unlike the conventional case where the reaction gas is rapidly heated right above the wafer surface, the undecomposed product of the reaction gas does not reach the wafer surface and deteriorates the film quality. Can be formed.
【００１０】また、ガス供給チャンバ内に、仕切板を設
けて反応ガスのガス径路を増大させると、反応ガスのガ
ス供給チャンバ内での滞在時間が長くなって、加熱分解
がさらに促進され、一層良質な膜が形成できる。Further, if a partition plate is provided in the gas supply chamber to increase the gas path of the reaction gas, the residence time of the reaction gas in the gas supply chamber is lengthened and the thermal decomposition is further promoted. A good quality film can be formed.
【００１１】[0011]
【実施例】実施例１．以下、この発明の一実施例を図を
用いて説明する。なお、従来の技術と重複している箇所
は適宜その説明を省略する。図１は、この発明の実施例
１による枚葉タイプのＣＶＤ装置の構造を示す断面図で
ある。図において、１〜８は従来のものと同じもの、９
は反応チャンバ５の反応ガスの入口側に設けられた石英
製のガス供給チャンバ、１０はガス供給チャンバ加熱の
ためのヒーターである。EXAMPLES Example 1. An embodiment of the present invention will be described below with reference to the drawings. Note that the description of the portions overlapping with those of the conventional technique will be appropriately omitted. 1 is a sectional view showing the structure of a single wafer type CVD apparatus according to a first embodiment of the present invention. In the figure, 1 to 8 are the same as the conventional one, 9
Is a quartz gas supply chamber provided on the reaction gas inlet side of the reaction chamber 5, and 10 is a heater for heating the gas supply chamber.
【００１２】このように構成されたＣＶＤ装置による成
膜を、ＳｉｘＮｙ膜を例として説明する。反応ガスであ
るＳｉＨ4およびＮＨ3は、マスフローコントローラ８に
より精度良く計量され、配管内で混合されてガス供給チ
ャンバ９内に供給される。混合ガスは、ガス供給チャン
バ９内で加熱され、気相中で加熱分解された後、反応チ
ャンバ５に送られてガスヘッド拡散板４により拡散さ
れ、ステージ２上に加熱保持されたウエハ１表面上にＳ
ｉｘＮｙ膜を形成する。反応チャンバ５内は排気口６に
接続された真空ポンプ７により低圧に保たれる。Film formation by the CVD apparatus having the above structure will be described by taking a SixNy film as an example. The reaction gases SiH 4 and NH 3 are accurately measured by the mass flow controller 8, mixed in the pipe, and supplied into the gas supply chamber 9. The mixed gas is heated in the gas supply chamber 9, decomposed by heating in the gas phase, sent to the reaction chamber 5, diffused by the gas head diffusion plate 4, and heated and held on the stage 2 surface of the wafer 1. S on top
An ixNy film is formed. The inside of the reaction chamber 5 is kept at a low pressure by a vacuum pump 7 connected to an exhaust port 6.
【００１３】このとき、従来のＣＶＤ装置の成膜時と同
様に、ウエハ温度は通常７００℃程度、反応チャンバ５
内のガスヘッド拡散板４および壁面の温度は低温に保た
れるが、ガス供給チャンバ９は反応ガスを十分に加熱分
解するために高温に制御される。その温度は、成膜条
件、要求される膜質により異なるが、５００〜６００℃
程度でかなり効果がある。At this time, the wafer temperature is usually about 700 ° C. and the reaction chamber 5 is the same as in the film formation in the conventional CVD apparatus.
The temperatures of the gas head diffusion plate 4 and the wall surface inside are kept low, but the gas supply chamber 9 is controlled to a high temperature in order to sufficiently decompose the reaction gas by heating. The temperature varies depending on the film forming conditions and the required film quality, but is 500 to 600 ° C.
It is quite effective depending on the degree.
【００１４】上記のようなＣＶＤ装置による成膜では、
反応ガスは予めガス供給チャンバ９内で十分に加熱分解
された状態で反応チャンバ５内に送られ、ウエハ１上に
供給される。このため、従来のＣＶＤ装置による成膜の
際にみられる様な反応ガスの未分解生成物による膜質へ
の悪影響を防止することができ、段差被覆性等が向上し
た良質な膜を形成することができる。またガス供給チャ
ンバ９は石英材料から成るため、高温においても金属な
どによる膜への汚染はない。In the film formation by the above CVD apparatus,
The reaction gas is sent to the reaction chamber 5 in the state of being sufficiently decomposed by heat in the gas supply chamber 9 and supplied onto the wafer 1. Therefore, it is possible to prevent the adverse effect on the film quality due to the undecomposed products of the reaction gas, which is seen during the film formation by the conventional CVD apparatus, and to form a high-quality film with improved step coverage and the like. You can Further, since the gas supply chamber 9 is made of a quartz material, the film is not contaminated by metal or the like even at a high temperature.
【００１５】実施例２．次に、この発明の実施例２につ
いて説明する。図２は、この発明の実施例２によるＣＶ
Ｄ装置の構造を示す断面図である。図に示すように、上
記実施例１で示したガス供給チャンバ９内に、反応ガス
のガス径路を増大させるための石英製の仕切板１１を備
える。ガス供給チャンバ９内に供給された混合ガスは、
仕切板１１により径路を曲げられながら通過することに
より、加熱分解をさらに促進することができ、一層良質
な膜を形成することができる。Example 2. Next, a second embodiment of the present invention will be described. FIG. 2 shows a CV according to a second embodiment of the present invention.
It is sectional drawing which shows the structure of D device. As shown in the figure, a quartz partition plate 11 for increasing the gas path of the reaction gas is provided in the gas supply chamber 9 shown in the first embodiment. The mixed gas supplied into the gas supply chamber 9 is
By passing through the path while being bent by the partition plate 11, thermal decomposition can be further promoted, and a higher quality film can be formed.
【００１６】なお、上記仕切板１１は、図２では、ガス
供給チャンバ９側壁に垂直方向に設けられたものを示し
たが、これに限るものではない。例えば、図３に示すよ
うならせん形状の仕切板１１であっても良く、また図４
に示すように、ガス径路が渦巻き状になる様に仕切板１
１を設けても良い。なお、図４（ａ）は、ガス径路を上
から見た図、図４（ｂ）はガス供給チャンバ９の断面図
である。The partition plate 11 is shown in FIG. 2 provided vertically on the side wall of the gas supply chamber 9, but the partition plate 11 is not limited to this. For example, the partition plate 11 may have a spiral shape as shown in FIG.
Partition plate 1 so that the gas path becomes spiral as shown in
1 may be provided. 4A is a view of the gas path seen from above, and FIG. 4B is a sectional view of the gas supply chamber 9.
【００１７】実施例３．また、反応ガスの供給方向はウ
エハ１面に対して垂直に限るものではなく、図５に示す
ように、ウエハ１面に対して平行であっても同様の効果
を奏する。Embodiment 3. Further, the supply direction of the reaction gas is not limited to be perpendicular to the surface of the wafer 1, and the same effect can be obtained even if it is parallel to the surface of the wafer 1 as shown in FIG.
【００１８】また、上記実施例１および２では、低圧の
ＣＶＤ装置について説明したが、常圧ＣＶＤ装置でも同
様の効果を奏する。Although the low pressure CVD apparatus has been described in the first and second embodiments, the same effect can be obtained with the normal pressure CVD apparatus.
【００１９】また、上記実施例１および２では、反応ガ
スとしてＳｉＨ4とＮＨ3とを用いてＳｉｘＮｙ膜を成膜
する場合を示したが、言うまでもなくＳｉＯ2膜、Ｔｉ
Ｎ膜等、他の膜でも適用でき、その場合、ウエハ１温
度、ガス供給チャンバ９温度はそれぞれに適する値に設
定するものである。Further, in the above-mentioned Examples 1 and 2, the case where the SixNy film was formed by using SiH 4 and NH 3 as the reaction gas was shown, but needless to say, the SiO 2 film and the Ti film are formed.
Other films such as N film can also be applied, and in that case, the temperature of the wafer 1 and the temperature of the gas supply chamber 9 are set to values suitable for each.
【００２０】[0020]
【発明の効果】以上のようにこの発明によれば、ＣＶＤ
装置にヒーターを備えたガス供給チャンバを具備して、
反応ガスを予め加熱してから反応室へ供給するようにし
たため、反応ガスが十分に加熱分解することができ、段
差被覆性等が向上した良質な膜を形成できる。As described above, according to the present invention, the CVD
The device is equipped with a gas supply chamber with a heater,
Since the reaction gas is preheated and then supplied to the reaction chamber, the reaction gas can be sufficiently decomposed by heating, and a high-quality film having improved step coverage and the like can be formed.
【００２１】また、ガス供給チャンバ内に仕切板を設け
て、反応ガスのガス径路を増大させたために、反応ガス
の加熱分解がさらに促進され一層良質な膜形成が行なえ
る。Further, since the partition plate is provided in the gas supply chamber to increase the gas path of the reaction gas, the thermal decomposition of the reaction gas is further promoted and a higher quality film can be formed.
【図１】この発明の実施例１によるＣＶＤ装置の構造を
示す断面図である。FIG. 1 is a sectional view showing the structure of a CVD apparatus according to a first embodiment of the present invention.
【図２】この発明の実施例２によるＣＶＤ装置の構造を
示す断面図である。FIG. 2 is a sectional view showing the structure of a CVD apparatus according to a second embodiment of the present invention.
【図３】この発明の実施例２におけるガス供給チャンバ
の別例を示す断面図である。FIG. 3 is a cross-sectional view showing another example of the gas supply chamber according to the second embodiment of the present invention.
【図４】この発明の実施例２におけるガス供給チャンバ
の別例を示す断面図およびガス径路図である。FIG. 4 is a sectional view and a gas path diagram showing another example of the gas supply chamber according to the second embodiment of the present invention.
【図５】この発明の実施例３によるＣＶＤ装置の構造を
示す断面図である。FIG. 5 is a sectional view showing the structure of a CVD apparatus according to a third embodiment of the present invention.
【図６】従来のＣＶＤ装置の構造を示す断面図である。FIG. 6 is a sectional view showing the structure of a conventional CVD apparatus.
１ 被処理基板としてのウエハ ５ 反応室としての反応チャンバ ９ ガス供給チャンバ １０ ヒーター １１ 仕切板 1 Wafer as a substrate to be processed 5 Reaction chamber as a reaction chamber 9 Gas supply chamber 10 Heater 11 Partition plate
Claims (2)
熱された被処理基板上に薄膜を形成する化学気相成長装
置において、反応ガスを、予め加熱してから反応室へ供
給するように、ヒーターを備えた供給チャンバを具備す
ることを特徴とする化学気相成長装置。1. In a chemical vapor deposition apparatus for supplying a reaction gas of a raw material to a reaction chamber to form a thin film on a heated substrate to be processed, the reaction gas is heated in advance and then supplied to the reaction chamber. Thus, a chemical vapor deposition apparatus comprising a supply chamber equipped with a heater.
反応ガスのガス径路を増大させたことを特徴とする請求
項１記載の化学気相成長装置。2. The chemical vapor deposition apparatus according to claim 1, wherein a partition plate is provided in the gas supply chamber to increase the gas path of the reaction gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21411593A JPH0766139A (en) | 1993-08-30 | 1993-08-30 | Chemical vapor deposition system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21411593A JPH0766139A (en) | 1993-08-30 | 1993-08-30 | Chemical vapor deposition system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0766139A true JPH0766139A (en) | 1995-03-10 |
Family
ID=16650485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21411593A Pending JPH0766139A (en) | 1993-08-30 | 1993-08-30 | Chemical vapor deposition system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0766139A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000012463A (en) * | 1998-06-17 | 2000-01-14 | Mitsubishi Electric Corp | Film formation device |
| WO2002047170A1 (en) * | 2000-12-08 | 2002-06-13 | Hitachi, Ltd. | Semiconductor device |
| WO2002093635A1 (en) * | 2001-05-15 | 2002-11-21 | Renesas Technology Corp. | Semiconductor integrated circuit device and production method thereof |
| EP1945831A1 (en) * | 2005-10-11 | 2008-07-23 | Eugene Technology Co., Ltd. | Partition-type heating apparatus |
| US7632093B2 (en) | 2004-09-06 | 2009-12-15 | Samsung Electronics Co., Ltd. | Pyrolysis furnace having gas flowing path controller |
| JP2010098283A (en) * | 2008-09-19 | 2010-04-30 | Hitachi Kokusai Electric Inc | Heat treatment apparatus and method of manufacturing semiconductor device |
| CN104641464A (en) * | 2012-09-17 | 2015-05-20 | 株式会社Eugene科技 | Substrate processing apparatus |
-
1993
- 1993-08-30 JP JP21411593A patent/JPH0766139A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000012463A (en) * | 1998-06-17 | 2000-01-14 | Mitsubishi Electric Corp | Film formation device |
| WO2002047170A1 (en) * | 2000-12-08 | 2002-06-13 | Hitachi, Ltd. | Semiconductor device |
| WO2002093635A1 (en) * | 2001-05-15 | 2002-11-21 | Renesas Technology Corp. | Semiconductor integrated circuit device and production method thereof |
| US6905982B2 (en) | 2001-05-15 | 2005-06-14 | Renesas Technology Corp. | Method of manufacturing a semiconductor integrated circuit device |
| US7632093B2 (en) | 2004-09-06 | 2009-12-15 | Samsung Electronics Co., Ltd. | Pyrolysis furnace having gas flowing path controller |
| EP1945831A1 (en) * | 2005-10-11 | 2008-07-23 | Eugene Technology Co., Ltd. | Partition-type heating apparatus |
| EP1945831A4 (en) * | 2005-10-11 | 2010-12-29 | Eugene Technology Co Ltd | Partition-type heating apparatus |
| JP2010098283A (en) * | 2008-09-19 | 2010-04-30 | Hitachi Kokusai Electric Inc | Heat treatment apparatus and method of manufacturing semiconductor device |
| CN104641464A (en) * | 2012-09-17 | 2015-05-20 | 株式会社Eugene科技 | Substrate processing apparatus |
| JP2015529983A (en) * | 2012-09-17 | 2015-10-08 | ユ−ジーン テクノロジー カンパニー．リミテッド | Substrate processing equipment |
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