JPH0945754A - Wafer stage device for semiconductor manufacturing device - Google Patents

Wafer stage device for semiconductor manufacturing device

Info

Publication number
JPH0945754A
JPH0945754A JP21097195A JP21097195A JPH0945754A JP H0945754 A JPH0945754 A JP H0945754A JP 21097195 A JP21097195 A JP 21097195A JP 21097195 A JP21097195 A JP 21097195A JP H0945754 A JPH0945754 A JP H0945754A
Authority
JP
Japan
Prior art keywords
wafer
semiconductor manufacturing
wafer stage
mounting plate
column
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21097195A
Other languages
Japanese (ja)
Inventor
Mamoru Sueyoshi
守 末吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Electric Corp
Original Assignee
Kokusai Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Corp filed Critical Kokusai Electric Corp
Priority to JP21097195A priority Critical patent/JPH0945754A/en
Publication of JPH0945754A publication Critical patent/JPH0945754A/en
Pending legal-status Critical Current

Links

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a wafer stage device for a semiconductor manufacturing device by which manufacturing cost is reduced and work for setting requirements of process is easy. SOLUTION: A wafer stage device supporting wafers within a reaction tube of a single wafer processing semiconductor manufacturing device comprises a supporting post 18 standing on a wafer stage base 17, a wafer mount plate 12 being supported by the post and wafers 11 being supported via the wafer mount plate, therefore the supporting position of the wafer mount plate refering to the post can be changed, work for setting requirement of process can be easy and additionally the construction can be simple.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は半導体製造装置、特
に枚葉式半導体製造装置のウェーハ台装置に関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a wafer stage apparatus for a single wafer type semiconductor manufacturing apparatus.

【0002】[0002]

【従来の技術】図6に於いて、従来の枚葉式半導体製造
装置について略述する。
2. Description of the Related Art A conventional single-wafer type semiconductor manufacturing apparatus will be briefly described with reference to FIG.

【0003】反応管25の周囲にはヒータ26,27が
配設され、前記反応管25内部にはウェーハ11を複数
段(図では3段)に支持するボート28が設けられてい
る。前記ウェーハ11はボート28に形成された棚段2
9に載置され、前記反応管25に反応ガスが導入された
状態で前記ヒータ26,27により加熱され、所要の処
理がなされる。
Heaters 26 and 27 are arranged around the reaction tube 25, and a boat 28 for supporting the wafers 11 in a plurality of stages (three stages in the figure) is provided inside the reaction tube 25. The wafers 11 are racks 2 formed on the boat 28.
It is placed on the substrate 9 and heated by the heaters 26 and 27 in a state where the reaction gas is introduced into the reaction tube 25, and the required processing is performed.

【0004】[0004]

【発明が解決しようとする課題】上記した従来の枚葉式
半導体製造装置に於いてはウェーハ11はボート28で
支持され、該ボート28は一体成形されたものであり、
製作が困難で加工費が高価であるという問題があると共
にウェーハ11間の距離を変更できないので、プロセス
に合わせて最適なウェーハ11間の距離を出す為にはウ
ェーハの支持間隔の異なる複数のボート28を用意しな
ければならない、又条件出しにはボート28の交換作業
が伴う等、条件出しに繁雑な作業が伴い又時間が掛かる
という問題があった。
In the above-mentioned conventional single wafer type semiconductor manufacturing apparatus, the wafer 11 is supported by the boat 28, and the boat 28 is integrally molded.
Since it is difficult to manufacture and the processing cost is high, the distance between the wafers 11 cannot be changed. Therefore, in order to obtain the optimum distance between the wafers 11 according to the process, a plurality of boats having different wafer support intervals are required. However, there is a problem in that complicated work is required for condition setting, and that it takes time, such as that it is necessary to prepare 28, and condition setting involves replacing the boat 28.

【0005】本発明は斯かる実情に鑑み、製作費が安価
で而もプロセスの条件出しの作業が容易であるウェーハ
台装置を提供しようとするものである。
In view of the above situation, the present invention aims to provide a wafer stage apparatus which is inexpensive to manufacture and which is easy to perform process condition setting.

【0006】[0006]

【課題を解決するための手段】本発明は、枚葉式半導体
製造装置の反応管内部でウェーハを支持するウェーハ台
装置に於いて、ウェーハ台ベースに支柱を立設し、該支
柱でウェーハ載置プレートを支持し、該ウェーハ載置プ
レートを介してウェーハを支持する様にした半導体製造
装置のウェーハ台装置に係り、又ウェーハ台ベースに支
柱を立設し、該支柱にスペーサを嵌入し、ウェーハが受
載されるウェーハ載置プレートに前記支柱を貫通させ、
ウェーハ載置プレートを前記スペーサを介して支持した
半導体製造装置のウェーハ台装置に係り、又ウェーハ台
ベースに支柱を立設し、該支柱に段差を形成し、ウェー
ハが受載されるウェーハ載置プレートに前記支柱を貫通
させ、前記段差で支持した半導体製造装置のウェーハ台
装置に係るものである。
SUMMARY OF THE INVENTION The present invention is a wafer stage apparatus for supporting a wafer inside a reaction tube of a single wafer type semiconductor manufacturing apparatus, in which a column is erected on a wafer stage base and the wafer is mounted on the column. Supporting the mounting plate, according to the wafer stage device of the semiconductor manufacturing apparatus so as to support the wafer through the wafer mounting plate, also standing the column on the wafer stage base, insert the spacer to the column, Penetrate the column to the wafer mounting plate on which the wafer is mounted,
A wafer mounting device of a semiconductor manufacturing apparatus in which a wafer mounting plate is supported via the spacers, and a pillar is erected on a wafer mounting base, and a step is formed on the pillar to mount a wafer on which a wafer is mounted. The present invention relates to a wafer stage apparatus of a semiconductor manufacturing apparatus in which a plate penetrates the pillar and is supported by the step.

【0007】従って、長さの異なるスペーサを交換する
ことで、ウェーハ間の上下方向の距離を容易に変更する
ことができ、又支柱の段差の位置を変更することでウェ
ーハ間の上下方向の距離を容易に変更することができ
る。又、構造が簡潔になり製作が容易となる。
Therefore, the vertical distance between the wafers can be easily changed by replacing the spacers having different lengths, and the vertical distance between the wafers can be changed by changing the position of the step of the supporting column. Can be changed easily. Further, the structure is simple and the production is easy.

【0008】[0008]

【発明の実施の形態】以下、図面を参照しつつ本発明の
実施の形態を説明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0009】図1、図2に於いて、本発明に係るウェー
ハ台装置を具備する枚葉式半導体製造装置の概略を説明
する。
An outline of a single wafer type semiconductor manufacturing apparatus equipped with a wafer stage apparatus according to the present invention will be described with reference to FIGS. 1 and 2.

【0010】石英製又は炭化硅素、アルミナ製の反応管
1は水平方向に偏平な空間を有する筒状であり、反応管
1の内部にウェーハ台装置2が設けられ、前記反応管1
の両端には気密にガス導入フランジ3,ガス導入フラン
ジ4が設けられ、一方のガス導入フランジ3には更にゲ
ート弁5を介して搬送室(図示せず)が連設されてい
る。前記ガス導入フランジ3、ガス導入フランジ4には
それぞれガス導入ライン7,8、排気ライン9,10が
連通され、又前記反応管1の周囲にはヒータ6が設けら
れ、反応管1内部を均一に加熱する様になっている。
A reaction tube 1 made of quartz, silicon carbide or alumina is in the shape of a cylinder having a flat space in the horizontal direction. A wafer stage device 2 is provided inside the reaction tube 1 and the reaction tube 1 is provided.
A gas introduction flange 3 and a gas introduction flange 4 are airtightly provided at both ends of the above, and a transfer chamber (not shown) is further connected to one gas introduction flange 3 via a gate valve 5. Gas introducing lines 7 and 8 and exhaust lines 9 and 10 are connected to the gas introducing flange 3 and the gas introducing flange 4, respectively, and a heater 6 is provided around the reaction tube 1 so that the inside of the reaction tube 1 is uniform. It is designed to heat up.

【0011】ゲート弁5が開かれ図示しないウェーハ搬
送ロボットにより図中左方よりウェーハ11が搬入さ
れ、前記ウェーハ台装置2に載置される。本図ではウェ
ーハ台装置2には2枚のウェーハ11が載置される。
The gate valve 5 is opened, and the wafer 11 is loaded from the left side in the drawing by a wafer transfer robot (not shown) and placed on the wafer stage apparatus 2. In this figure, two wafers 11 are placed on the wafer stage device 2.

【0012】前記ウェーハ搬送ロボットが後退してゲー
ト弁5が閉じられ、反応管1内に前記ガス導入ライン
7,8より反応ガスが導入され、前記排気ライン9,1
0より排気される。尚、処理の均一性を確保する為、反
応ガスは対角線状に、例えばガス導入ライン7から排気
ライン10に向かって流れ、或はガス導入ライン8から
排気ライン9に向かって流れ、更に所要時間毎に流れの
向きが変更される様になっている。ウェーハ11の処理
が完了すると、前記ゲート弁5が開かれ、ウェーハ11
はウェーハ搬送ロボットにより搬出される。
The wafer transfer robot retracts, the gate valve 5 is closed, reaction gas is introduced into the reaction tube 1 through the gas introduction lines 7 and 8, and the exhaust lines 9 and 1 are introduced.
Exhausted from zero. In order to ensure the uniformity of the treatment, the reaction gas flows diagonally, for example, from the gas introduction line 7 to the exhaust line 10 or from the gas introduction line 8 to the exhaust line 9 for a further required time. The flow direction is changed every time. When the processing of the wafer 11 is completed, the gate valve 5 is opened and the wafer 11
Are unloaded by the wafer transfer robot.

【0013】ウェーハ台装置2は保持すべきウェーハ1
1に対して各1枚のウェーハ載置プレート12を有す
る。
The wafer stage device 2 holds the wafer 1 to be held.
There is one wafer mounting plate 12 for each one.

【0014】該ウェーハ載置プレート12は石英、或は
炭化硅素、アルミナ等の材質から成る矩形のプレートの
中央にウェーハ11の直径よりも大きい直径を有する抜
き孔13を穿設し、該抜き孔13の円周4等分した位置
のウェーハ載置プレート12下面に爪14を中心方向に
突設する。又、前記ウェーハ載置プレート12の前記ゲ
ート弁5側には欠切部15を設け、該欠切部15の反対
側には2箇所に逃げ部16を設ける。前記欠切部15、
逃げ部16は前記図示しないウェーハ搬送ロボットのウ
ェーハ載置アームが進入し、ウェーハ11の授受を行う
場合に干渉しない様設けられる。
The wafer mounting plate 12 has a hole 13 having a diameter larger than that of the wafer 11 at the center of a rectangular plate made of quartz, silicon carbide, alumina or the like. A claw 14 is provided so as to project in the center direction on the lower surface of the wafer mounting plate 12 at a position where the circumference 13 is divided into four equal parts. Further, a cutout portion 15 is provided on the wafer mounting plate 12 on the gate valve 5 side, and two relief portions 16 are provided on the opposite side of the cutout portion 15. The cutout portion 15,
The escape portion 16 is provided so as not to interfere when the wafer mounting arm of the wafer transfer robot (not shown) enters and transfers the wafer 11.

【0015】前記ウェーハ載置プレート12は処理すべ
きウェーハ11の数だけ上下方向に所要の間隔で支持さ
れる。
The wafer mounting plate 12 is supported by the number of wafers 11 to be processed in the vertical direction at required intervals.

【0016】本実施の形態に於いては、ウェーハ台装置
2は前記したウェーハ載置プレート12を上下2段に具
備している。図3は該形態でのウェーハ台装置2の概念
図であり、以下該ウェーハ台装置2について説明する。
In the present embodiment, the wafer stage device 2 comprises the above-mentioned wafer mounting plates 12 in two upper and lower stages. FIG. 3 is a conceptual diagram of the wafer stage apparatus 2 in this mode, and the wafer stage apparatus 2 will be described below.

【0017】ウェーハ台ベース17の4隅に石英、或は
炭化硅素、アルミナ等の材質から成る支柱18を立設
し、該支柱18に石英、或は炭化硅素、アルミナ等の材
質から成るスペーサ19を嵌入し、次に下段のウェーハ
載置プレート12を前記支柱18に貫通させた状態で前
記スペーサ19上に載置し、更にスペーサ20を嵌入
し、最後に上段のウェーハ載置プレート12を支柱18
に貫通させた状態で前記スペーサ20上に載置する。前
記スペーサ19、スペーサ20はプロセスに必要なウェ
ーハ11間の距離を設定する。
A pillar 18 made of a material such as quartz, silicon carbide, or alumina is erected at four corners of the wafer base 17, and a spacer 19 made of a material such as quartz, silicon carbide, or alumina is provided on the pillar 18. And then the lower wafer mounting plate 12 is mounted on the spacer 19 in a state where the lower wafer mounting plate 12 penetrates the support column 18, and the spacer 20 is further inserted, and finally the upper wafer mounting plate 12 is mounted on the support column. 18
It is placed on the spacer 20 in a state of being penetrated through. The spacers 19 and 20 set the distance between the wafers 11 necessary for the process.

【0018】ウェーハ11間の距離を変更するには、前
記スペーサ19、スペーサ20の長さを変更することで
容易に対応することができる。
The distance between the wafers 11 can be easily changed by changing the lengths of the spacers 19 and 20.

【0019】又、図4はウェーハ11を3段に支持する
場合を示しており、図3で示したウェーハ台装置に対し
て更にスペーサ21を嵌入し、ウェーハ載置プレート1
2を積上げたものである。
Further, FIG. 4 shows a case where the wafer 11 is supported in three stages. A spacer 21 is further fitted into the wafer stage device shown in FIG.
It is a stack of two.

【0020】更に、図5は他の実施の形態を示すもので
あり、ウェーハ載置プレート12を支持する支柱22を
段付き形状とし、又該支柱22を交換可能としたもので
あり、又該支柱22に嵌込むウェーハ載置プレート12
も下段のウェーハ載置プレート12a、から中段のウェ
ーハ載置プレート12b、上段のウェーハ載置プレート
12cに行くに従い支柱22との嵌合孔を小さくしたも
のである。該実施の形態でウェーハ間の距離を変更する
場合は、段差間の距離の異なる支柱に交換する。該実施
の形態に於いてウェーハ載置プレート12aのみを設け
て1段のウェーハ台装置としてもよいことは言う迄もな
い。
Further, FIG. 5 shows another embodiment, in which the supporting column 22 for supporting the wafer mounting plate 12 has a stepped shape, and the supporting column 22 is replaceable. Wafer mounting plate 12 that fits into the support 22
Also, the fitting holes for the columns 22 are made smaller from the lower wafer mounting plate 12a to the middle wafer mounting plate 12b to the upper wafer mounting plate 12c. In the case of changing the distance between the wafers in the embodiment, the columns are replaced with columns having different distances. It goes without saying that in this embodiment, only the wafer mounting plate 12a may be provided to form a single-stage wafer stage apparatus.

【0021】[0021]

【発明の効果】以上述べた如く本発明によれば、ウェー
ハ台装置を構成する部材の溶接する箇所が大幅に少なく
なり、加工費、工数の低減を行え、又ウェーハを支持す
るウェーハ載置プレートの形状、材質をウェーハに生成
する膜種により変更することが容易であり、設備費の低
減が行え、更にウェーハ間の距離を反応ガスの流れ等が
最適になる様容易に変更が可能となる等の優れた効果を
発揮する。
As described above, according to the present invention, the number of welding points of the members constituting the wafer stage apparatus is significantly reduced, the processing cost and man-hours can be reduced, and the wafer mounting plate for supporting the wafer is reduced. The shape and material of the wafer can be easily changed depending on the film type generated on the wafer, the equipment cost can be reduced, and the distance between the wafers can be easily changed to optimize the flow of the reaction gas. It exhibits excellent effects such as.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施の形態を示す正断面図である。FIG. 1 is a front sectional view showing an embodiment of the present invention.

【図2】同前実施の形態を示す平断面図である。FIG. 2 is a plan sectional view showing the embodiment.

【図3】同前実施の形態の要部を示す概念図である。FIG. 3 is a conceptual diagram showing a main part of the same embodiment.

【図4】本発明の他の実施の形態の要部を示す概念図で
ある。
FIG. 4 is a conceptual diagram showing a main part of another embodiment of the present invention.

【図5】本発明の更に他の形態の要部を示す概念図であ
る。
FIG. 5 is a conceptual diagram showing a main part of still another embodiment of the present invention.

【図6】従来例の要部を示す概念図である。FIG. 6 is a conceptual diagram showing a main part of a conventional example.

【符号の説明】[Explanation of symbols]

1 反応管 2 ウェーハ台装置 12 ウェーハ載置プレート 17 ウェーハ台ベース 18 支柱 19 スペーサ 20 スペーサ 21 スペーサ 22 支柱 1 Reaction Tube 2 Wafer Stand Device 12 Wafer Mounting Plate 17 Wafer Stand Base 18 Support 19 Spacer 20 Spacer 21 Spacer 22 Support

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 枚葉式半導体製造装置の反応管内部でウ
ェーハを支持するウェーハ台装置に於いて、ウェーハ台
ベースに支柱を立設し、該支柱でウェーハ載置プレート
を支持し、該ウェーハ載置プレートを介してウェーハを
支持する様にしたことを特徴とする半導体製造装置のウ
ェーハ台装置。
1. In a wafer stage apparatus for supporting a wafer inside a reaction tube of a single wafer type semiconductor manufacturing apparatus, a column is erected on a wafer stage base, and the wafer mounting plate is supported by the column, A wafer stage device for a semiconductor manufacturing apparatus, wherein a wafer is supported via a mounting plate.
【請求項2】 枚葉式半導体製造装置の反応管内部でウ
ェーハを支持するウェーハ台装置に於いて、ウェーハ台
ベースに支柱を立設し、該支柱にスペーサを嵌入し、ウ
ェーハが受載されるウェーハ載置プレートに前記支柱を
貫通させ、ウェーハ載置プレートを前記スペーサを介し
て支持したことを特徴とする半導体製造装置のウェーハ
台装置。
2. In a wafer stage apparatus for supporting a wafer inside a reaction tube of a single wafer type semiconductor manufacturing apparatus, a column is erected on a wafer platform base, a spacer is fitted into the column, and a wafer is received. A wafer stage device of a semiconductor manufacturing apparatus, wherein the support column is penetrated through the wafer mounting plate, and the wafer mounting plate is supported via the spacer.
【請求項3】 枚葉式半導体製造装置の反応管内部でウ
ェーハを支持するウェーハ台装置に於いて、ウェーハ台
ベースに支柱を立設し、該支柱に段差を形成し、ウェー
ハが受載されるウェーハ載置プレートに前記支柱を貫通
させ、前記段差で支持したことを特徴とする半導体製造
装置のウェーハ台装置。
3. In a wafer stage apparatus for supporting a wafer inside a reaction tube of a single wafer type semiconductor manufacturing apparatus, a column is erected on a wafer platform base, a step is formed on the column, and a wafer is received. A wafer stage device of a semiconductor manufacturing apparatus, wherein the supporting column is penetrated through a wafer mounting plate according to the present invention and is supported at the step.
JP21097195A 1995-07-27 1995-07-27 Wafer stage device for semiconductor manufacturing device Pending JPH0945754A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21097195A JPH0945754A (en) 1995-07-27 1995-07-27 Wafer stage device for semiconductor manufacturing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21097195A JPH0945754A (en) 1995-07-27 1995-07-27 Wafer stage device for semiconductor manufacturing device

Publications (1)

Publication Number Publication Date
JPH0945754A true JPH0945754A (en) 1997-02-14

Family

ID=16598167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21097195A Pending JPH0945754A (en) 1995-07-27 1995-07-27 Wafer stage device for semiconductor manufacturing device

Country Status (1)

Country Link
JP (1) JPH0945754A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003109951A (en) * 2001-09-28 2003-04-11 Hitachi Kokusai Electric Inc Method for processing substrate
JP2006222468A (en) * 2002-03-26 2006-08-24 Tokyo Electron Ltd Substrate processing device, substrate processing method and cleaning method
JP2011258982A (en) * 2011-09-01 2011-12-22 Hitachi Kokusai Electric Inc Substrate processing method, substrate processing apparatus, manufacturing method for semiconductor device and substrate transfer method
JP2014207435A (en) * 2013-03-21 2014-10-30 東京エレクトロン株式会社 Batch-type vertical substrate processing apparatus and substrate holder

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003109951A (en) * 2001-09-28 2003-04-11 Hitachi Kokusai Electric Inc Method for processing substrate
JP2006222468A (en) * 2002-03-26 2006-08-24 Tokyo Electron Ltd Substrate processing device, substrate processing method and cleaning method
JP2011258982A (en) * 2011-09-01 2011-12-22 Hitachi Kokusai Electric Inc Substrate processing method, substrate processing apparatus, manufacturing method for semiconductor device and substrate transfer method
JP2014207435A (en) * 2013-03-21 2014-10-30 東京エレクトロン株式会社 Batch-type vertical substrate processing apparatus and substrate holder

Similar Documents

Publication Publication Date Title
US6033215A (en) Heat treatment apparatus and heat treatment boat
US11430679B2 (en) Semiconductor manufacturing apparatus
US5789324A (en) Uniform gas flow arrangements
JPH0945754A (en) Wafer stage device for semiconductor manufacturing device
JP3915314B2 (en) Single wafer processing equipment
JPH07176490A (en) Cvd apparatus
JP2001110730A (en) Vertical heat treatment equipment
JPH06132390A (en) Wafer boat
JP2963145B2 (en) Method and apparatus for forming CVD film
JPH062948B2 (en) How to treat the object
JP3672583B2 (en) Semiconductor manufacturing apparatus and semiconductor manufacturing method
JPH09162135A (en) Longitudinal direction type diffusion furnace and cap that is used for it
JP2537563Y2 (en) Vertical vacuum deposition equipment
JP2005056908A (en) Substrate treatment system
JP3323168B2 (en) Semiconductor manufacturing equipment
JPH06818Y2 (en) Substrate support apparatus for CVD apparatus
JPH10321541A (en) Vertical-type wafer heat processor
JPH11102903A (en) Method and equipment for thin film forming and method for manufacturing semiconductor device
JPH0721570Y2 (en) Vertical low pressure CVD film manufacturing equipment
JPH11283928A (en) Heat-treating device
JPH1050684A (en) Manufacturing of semiconductor device
JPH11195611A (en) Manufacture of reactor and semiconductor member
KR200153151Y1 (en) Dummy type wafer boat of semiconductor apparatus
KR200298458Y1 (en) Process chamber of semi conductor manufacturing equipment
KR20020027974A (en) Boat of CVD apparatus having loading plate