JPH11195611A - Manufacture of reactor and semiconductor member - Google Patents

Abstract

PROBLEM TO BE SOLVED: To equalize not only the in-batch distribution from jetting ports of an injector but also the film thickness distribution on the surfaces of substrates furthermore facilitating the processing of the jetting ports. SOLUTION: In a reaction chamber for processing the surfaces of wafers by jetting, feeding a gas from a pipelike injector 4 to the wafers 7 arranged vertically at specific intervals in a reaction chamber, multiple gas jetting parts 6 are opened in the long direction of the injector 4 in the different direction to the centers of the wafers loaded on a wafer holder.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] The present invention relates to a reactor, and
The present invention relates to a method for manufacturing a semiconductor member for performing a treatment on a substrate surface using the reaction apparatus.

[0002]

2. Description of the Related Art As a reaction apparatus, for example, a conventional vertical diffusion furnace has an injector 1 as shown in FIGS.
The direction of injection of the reaction gas from one of the ejection ports 12 is arranged in the reaction chamber and is directed toward the center of the wafer 13 provided on the support. , About twice the spacing between the wafers 13. However, here, there is a problem that the distribution of the film thickness on the surface of the wafer 13 within the wafer surface is very uneven.

[0003]

Therefore, there has been proposed a configuration in which the diameter of each of the jet ports 12 gradually increases as the distance from the gas inlet side increases (for example, Japanese Patent Application Laid-Open No. HEI 9-208572). 6-53154). The reason why the diameter of the ejection port 12 is gradually increased in the distribution within the batch is to make the ejection amount from the cylindrical injector 11 uniform for each ejection port. , The distribution unevenness was considerably improved, but there was a problem that the process of forming the diameter gradually larger one by one was extremely troublesome.

The present invention has been made based on the above circumstances, and aims at equalizing the film thickness distribution in the plane of a substrate (for example, a wafer) as well as the distribution within a batch from an injector outlet. In addition, a device for facilitating the processing of the jet port has been devised.

[0005]

Therefore, in the present invention,
A reaction chamber, a support provided in the reaction chamber, for arranging a plurality of substrates at predetermined intervals, and a reaction apparatus having a tubular injector for supplying a reaction gas into the reaction chamber; Is characterized in that a number of gas ejection ports are opened along a longitudinal direction thereof in a direction different from the center of the substrate to be mounted on the support.

In this case, the distance between the gas outlets is smaller than the distance between the substrates to be mounted on the support, and the diameter of the gas outlets increases as the distance from the gas inlet increases. It is preferred that the size increase every 10 to 40 pieces. The reactor is, as one embodiment, a diffusion furnace.

Further, in the present invention, the substrate is placed on a support for placing the substrate at a predetermined interval provided in the reaction chamber, and a reaction gas is supplied into the reaction chamber from a tubular injector. In the method for manufacturing a semiconductor member having a step of performing a process on the substrate surface, as the injector, along the longitudinal direction thereof, a number of gas ejection ports are provided at the center of the substrate to be mounted on the support. Is characterized in that the reaction gas is supplied by using an opening which faces in a different direction.

[0008] In this case, the diameter of the gas ejection port is increased in increments of 10 to 40 as the distance from the gas inflow port increases, and the reaction gas is supplied. In addition, a diffusion process is performed as the process. Is preferred.

Accordingly, not only the distribution within the batch from the ejection port of the injector but also the film thickness distribution in the plane of the substrate (eg, wafer) can be equalized. Furthermore, compared to the conventional case in which all the diameters are sequentially changed and formed by machining means such as drilling, since several diameters are selected in a stepwise manner, the formation of the injection port is facilitated. Is obtained.

[0010] In the present invention, a reaction apparatus includes a diffusion furnace, a heat treatment furnace, and a C that forms a film by reducing the pressure in the reaction chamber.
VD devices and the like. Therefore, the method of manufacturing a semiconductor member according to the present invention refers to a method of manufacturing a semiconductor member by treating the surface of a substrate using these furnaces and apparatuses.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be specifically described below with reference to FIGS. Here, as a wafer for performing anodization in the process of forming an SOI by a bonding method using a single etch stop, a vertical diffusion furnace applied to a boron glass attaching step of diffusing boron element on the surface of a high resistance substrate is used. Illustrated.

As shown in FIG. 1, a vertical diffusion furnace is employed as the basis of a semiconductor substrate wafer manufacturing apparatus. The source of boron element is boron tribromide which is liquid at normal temperature and normal pressure. A nitrogen gas is used as the carrier gas.
Here, boron tribromide is vaporized by a vaporizer 1 called a bubbler and mixed with other nitrogen gas (N ₂ ) and oxygen gas (O ₂ ). Is introduced into the tubular injector 4 arranged in the above. The inside of the reaction tube 3 (reaction chamber) is heated to a temperature of 1100 ° C. by a heater 5 surrounding the outside of the reaction tube 3.

Thus, the mixed gas is introduced into the injector 4 from the gas inlet 2 and the introduced gas is ejected into the reaction chamber from the plurality of ejection ports 6 arranged in the longitudinal direction of the injector 4. Especially the injector 4
As shown in FIGS. 2 and 3, the ejection direction of the ejection port 6 is different from the direction of the center of the wafer 7 placed on the support inside the reaction tube 3, for example, The direction is set to 90 degrees.

In addition, as shown in FIG.
The interval is set to a half of the arrangement interval of the wafers 7 (arranged vertically at a predetermined interval with respect to the board), and the diameter thereof is set to gradually increase stepwise from the gas inlet 2 side for every 33 pieces. doing. Reference numeral 8 in the drawing denotes a gas outlet provided in the reaction tube 3.

With this configuration, the distribution of the gas within the batch is equalized, and the uniformity of the film thickness distribution on the wafer 7 is achieved. This was confirmed in the following experiment. That is, the same reaction tube 3 is used, and the injection port 6 of the injector 4 is used.
Is compared with the case of turning the wafer 7 toward the center of the wafer 7 (conventional example) and the case of the direction of the ejection port 6 according to the embodiment of the present invention (described above), as shown in FIG. A clear difference occurred between the measurement result of the in-plane film thickness distribution and the measurement result of the in-plane film thickness distribution.

In the drawing, the in-plane distribution was calculated by defining the film thickness distribution = (highest value−lowest value) / (2 × average value) based on the film thickness measurement values at five points in the surface.

The distribution in the batch is obtained by calculating the film thickness distribution = (maximum value−minimum value) from the average value of the film thickness at five points in each plane for three wafers extracted from the upper, middle and lower positions in the reaction tube. Value) / (2 × average value).

[0018]

As described in detail above, the present invention injects and supplies gas from a tubular injector to a substrate disposed at a predetermined interval in a vertical direction in a reaction chamber, and In the reactor for performing the processing, since the injector has a large number of gas ejection ports opened in a direction other than the center of the wafer in the longitudinal direction, the distribution in the batch from the injector ejection ports is of course. That is, the film thickness distribution in the plane of the substrate could be equalized.

Further, compared to the conventional case in which all apertures are sequentially changed and formed by machining means such as drilling,
Since several apertures are selected step by step, an effect is obtained that the formation of the ejection port is facilitated.

[Brief description of the drawings]

FIG. 1 is an overall schematic configuration diagram showing an embodiment of the present invention.

FIG. 2 is also a plan view of a main part.

FIG. 3 is a side view of a main part, similarly.

FIG. 4 is a plan view of a main part of a conventional example.

FIG. 5 is also a side view of a main part.

FIG. 6 is a graph showing a comparison between the present invention and a conventional example.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Vaporizer 2 Gas inlet 3 Reaction tube 4 Injector 5 Heater 6 Spout 7 Wafer 8 Gas outlet

Claims (7)

[Claims] A reaction apparatus comprising: a reaction chamber; a support provided in the reaction chamber for arranging a plurality of substrates at predetermined intervals; and a tubular injector for supplying a reaction gas into the reaction chamber. In the injector, a number of gas ejection ports are opened along a longitudinal direction thereof in a direction different from a center of the substrate to be mounted on the support, Reactor. 2. The vertical diffusion furnace according to claim 1, wherein an interval between the gas ejection ports is smaller than an interval between the substrates to be mounted on the support. 3. The reactor according to claim 1, wherein the diameter of the gas outlet increases in order from 10 to 40 as the gas outlet moves away from the gas inlet. 4. The reactor according to claim 1, wherein the reactor is a diffusion furnace. 5. A substrate placed on a substrate provided in a reaction chamber for placing the substrate at a predetermined interval, and a reaction gas is supplied from a tubular injector into the reaction chamber to form a substrate surface. In the method of manufacturing a semiconductor member having a step of performing a process, as the injector, along the longitudinal direction, a large number of gas ejection ports, in a direction different from the center of the substrate to be mounted on the support A method for manufacturing a semiconductor member, characterized in that the reaction gas is supplied by using an opening directed toward the semiconductor member. 6. The reaction gas is supplied by increasing the diameter of the gas outlet from 10 to 40 as the distance from the gas inlet increases.
3. The method for manufacturing a semiconductor member according to item 1. 7. The method according to claim 5, wherein a diffusion process is performed as the process.