JP2000311862A - Substrate treating system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To uniformly contact raw gas over an entire wafer. SOLUTION: A CVD system is provided with a process tube 1 constituted of an inner tube 2, which is carried with a group of wafers 10 in its interior, and an outer tube 3 encircling the inner tube 2, a gas inlet nozzle 22 for introducing a raw gas 21 in the inner tube 2, an exhaust vent 7 for exhausting air in the process tube 1 and a heater 20 for heating the interior of the tube 1. In this case, large, medium and small size exhaust vents 25a, 25b and 25c respectively are provided open in the sidewall of the tube 2 in line on the upper, central and lower steps, a plurality of jet holes 24 are provided openly in the nozzle 22 counterposed to the parts between the upper and lower wafers 10 and the sectional area of the flow path of the nozzle 22 is set wider than the total sum of the areas of apertures formed in a group of the jet holes 24. Since the raw gas 21 can be uniformly contacted with each wafer, the film forming states of films can be uniformized over entirety in the wafers and in the group of the wafers, and the film-forming rates of the films can be improved relatively to each other.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus, and more particularly, to a batch type vertical hot-wall type low pressure CVD apparatus. For example, in a semiconductor device manufacturing process, a semiconductor wafer (hereinafter, referred to as a wafer) is formed of polysilicon or the like. The present invention relates to a method effective for depositing a silicon nitride film or the like.

2. Description of the Related Art In a semiconductor device manufacturing process, a batch type vertical hot-wall type low-pressure CVD is used to deposit a CVD film such as a polysilicon or a silicon nitride film on a wafer.
The device is widely used. A general batch-type vertical hot-wall type low-pressure CVD apparatus introduces a raw material gas into an inner tube into which a wafer is loaded, an outer tube surrounding the inner tube, a vertically installed process tube, and an inner tube. A gas introduction nozzle, an exhaust port for evacuating the process tube, and a heater laid outside the process tube to heat the inside of the process tube are provided, and a plurality of wafers are long aligned and held by the boat. In this state, the raw material gas is carried into the inner tube from the furnace port at the lower end, and the raw material gas is introduced into the inner tube by the gas introduction nozzle, and the inside of the process tube is heated by the heater, so that the CVD film is deposited on the wafer. It is configured to:

As a conventional substrate processing apparatus of this type, there is a vapor phase growth apparatus described in Japanese Patent Application Laid-Open No. 64-81216. That is, this publication includes a dome-shaped inner pipe and an outer pipe having a double structure, a plurality of exhaust holes are opened in a side wall of the inner pipe, and an exhaust port is opened in a lower end of a side wall of the outer pipe. In addition, a gas phase growth apparatus in which a plurality of gas discharge pores are arranged in the longitudinal direction in the nozzle tube,
It has been disclosed.

[0004]

In the above-mentioned general batch type vertical hot wall type low pressure CVD apparatus,
The source gas introduced into the inner tube by the gas introduction nozzle rises in the inner tube while contacting the wafer group, flows into the gap between the inner tube and the outer tube from the ceiling of the inner tube, and flows down the gap. Since the exhaust gas is exhausted out of the process tube from the exhaust port formed at the lower end of the outer tube, the source gas is not diffused by being in a state where it does not flow parallel to the wafer, and there is a limit to the improvement of the film forming speed. .

Here, in a batch type vertical hot wall type low pressure CVD apparatus, the inner hole is opened on the side wall of the inner tube like the exhaust hole of the inner tube of the vapor phase growth apparatus described in the above-mentioned publication. It is considered that the source gas introduced into the tube can flow in parallel to each wafer. However, if an exhaust hole is simply opened in the side wall of the inner tube, the source gas does not always flow in parallel to each wafer, and the source gas simply passes by an uneven state. The present inventors have found that there is a problem in that the CVD reaction becomes non-uniform in the wafer and in the group of wafers, and eventually, the film forming rate is reduced.

An object of the present invention is to provide a substrate processing apparatus capable of uniformly contacting a gas with a substrate over the entire substrate.

[0007]

According to the present invention, there is provided a substrate processing apparatus comprising: a process tube including an inner tube into which a substrate is loaded; an outer tube surrounding the inner tube; and a gas introduced into the inner tube. In a substrate processing apparatus including a gas introduction nozzle and an exhaust port for exhausting the inside of the process tube, a plurality of exhaust holes are opened in a side wall of the inner tube in a longitudinal direction, and the openings of the exhaust holes are opened. The area is changed according to the position with respect to the exhaust port.

In the above means, the gas introduced into the inner tube flows out of the plurality of exhaust holes formed in the side wall of the inner tube into the gap between the inner tube and the outer tube and is exhausted from the exhaust port. Then, the gas flowing in the inner tube flows in parallel with each wafer. Since the gas flows in parallel to each wafer, the gas uniformly contacts the entire surface of each wafer, so that the processing state in each wafer becomes uniform and the processing speed is relatively improved. At this time, since the opening area of the plurality of exhaust holes is changed depending on the position with respect to the exhaust holes, the flow of gas passing through each exhaust hole is controlled, so that the gas is arranged in the length direction of the inner tube. In this state, the wafers uniformly contact the entire wafer group over the entire length.
In other words, the gas contacts not only uniformly within each wafer, but also uniformly over the entire wafer group, so that the processing state is uniform throughout the entire wafer and the entire wafer group, and as a result, the processing speed is synergistic. Will be improved.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings.

In this embodiment, the substrate processing apparatus according to the present invention is configured as a batch type vertical hot wall type reduced pressure CVD apparatus (hereinafter, referred to as a CVD apparatus) as shown in FIG. CV shown in FIG.
The D apparatus is provided with a vertical process tube 1 which is arranged vertically so that the center line is vertical and fixedly supported,
The process tube 1 includes an inner tube 2 and an outer tube 3. Each of the inner tube 2 and the outer tube 3 is integrally formed into a cylindrical shape using a material having high heat resistance such as quartz glass.

The inner tube 2 is formed in a cylindrical shape having an upper end closed and a lower end opened, and a hollow portion of the inner tube 2 is loaded with a plurality of wafers held in a state of being long aligned by a boat. The chamber 4 is substantially formed. The opening at the lower end of the inner tube 2 substantially constitutes a furnace port 5 for taking in and out the wafer 10 as an object to be processed. Therefore, the inner diameter of the inner tube 2 is set to be larger than the maximum outer diameter of the wafer 10 to be handled.

The outer tube 3 has a shape similar to the inner tube 2 and is formed in a cylindrical shape having a closed upper end and an open lower end. The outer tube 3 is concentrically covered so as to surround the outer side of the inner tube 2. The lower end between the inner tube 2 and the outer tube 3 is hermetically sealed by a cap 6 formed in a circular ring shape, and the cap 6 is used for maintenance and inspection work and cleaning work on the inner tube 2 and the outer tube 3. Therefore, it is detachably attached to the inner tube 2 and the outer tube 3. Since the cap 6 is supported by a machine frame (not shown) of the CVD apparatus, the process tube 1 is vertically installed.

An exhaust port 7 is provided in a part of the side wall of the cap 6, and the exhaust port 7 is provided with a high vacuum exhaust device (not shown).
And the processing chamber 4 can be evacuated to a predetermined degree of vacuum. The exhaust port 7 is in communication with a gap formed between the inner tube 2 and the outer tube 3.
The exhaust passage 8 is formed in a circular ring shape having a constant width in cross section by the gap between the exhaust passage 8 and the exhaust passage 8. Exhaust port 7 is cap 6
Therefore, the exhaust port 7 is disposed at the lower end of a vertically extending exhaust path 8 which is formed in a hollow cylindrical body.

A gate 9 for closing the lower end opening is brought into contact with the cap 6 from below in the vertical direction. The gate 9 is formed in a disk shape substantially equal to the outer diameter of the outer tube 3, and is configured to be vertically moved up and down by an elevator (not shown) installed vertically outside the process tube 1. . A boat 11 for holding a wafer 10 as an object to be processed is vertically supported on the center line of the gate 9.

The boat 11 has a pair of upper and lower end plates 12 and 13.
And a plurality of vertically arranged holding members 14 erected between both end plates 12 and 13.
The wafers 10 are inserted between a plurality of holding grooves 15 which are arranged at regular intervals in the longitudinal direction and are laid so as to face each other, so that the plurality of wafers 10 are horizontally and centered with respect to each other. Are arranged and held in an aligned state. A pair of upper and lower auxiliary end plates 16 and 17 are provided between the boat 11 and the gate 9.
The auxiliary holding member 18 has a plurality of holding grooves 19 submerged therein.

Outside the outer tube 3, a heater 20 for uniformly heating the entire process tube 1 is provided concentrically so as to surround the outer tube 3, and the heater 20 is provided in the CVD apparatus. It is installed vertically by being supported by a machine frame (not shown).

Two gas introduction nozzles 22 (see FIG. 3) for introducing the source gas 21 are vertically erected at a position 180 ° opposite to the exhaust port 7 near the inner peripheral surface of the inner tube 2 (see FIG. 3). In addition, the gas introduction port 23 of the gas introduction nozzle 22 penetrates the side wall of the cap 6 radially outward and protrudes outside the process tube 1. As shown in FIG. 2, the gas introduction nozzle 22 is provided with a plurality of ejection ports 24 arranged in a vertical direction, and the number of ejection ports 24 corresponds to the number of wafers 10 to be processed. Have been. In the present embodiment, the number of the spouts 24 is equal to the number of wafers 10 to be processed, and the height position of each spout 24 is between the vertically adjacent wafers 10 held by the boat 11. Are set to face each other. Further, the cross-sectional area of the flow passage of the gas introduction nozzle 22 is set to be larger than the sum of the opening areas of the group of the ejection ports 24.

At the position on the side wall of the inner tube 2 opposite to the gas introduction nozzle 22 by 180 degrees, that is, at the position on the exhaust port 7 side, large, medium and small circular exhaust holes 25a, 25 are provided.
b and 25c are vertically arranged in the upper, middle, and lower tiers, and the opening areas of the three exhaust holes 25a, 25b, and 25c are set so as to increase as the distance from the exhaust port 7 increases. That is, the upper exhaust hole 25a
Is Sa, and the opening area of the middle exhaust hole 25b is S.
b, assuming that the opening area of the lower exhaust hole 25c is Sc, the opening areas Sa, Sb, Sc are respectively set so as to satisfy Sa>Sb> Sc.

Next, the operation will be described.

A wafer 10 to be processed is a boat 11
Are inserted between the holding grooves 15 of the holding member 14 so that their circumferential edges engage with each other at three opposing positions (see FIG. 3), and the three outer peripheral edges are engaged with the holding grooves 15. It is set and held so that it can be combined and support its own weight. The plurality of wafers 10 are aligned in parallel and horizontally with their centers aligned in the state of being held in the boat 11.

As shown in FIG. 1, a boat 11 in which a plurality of wafers 10 are aligned and held is placed on a gate 9 such that the direction in which the groups of wafers 10 are arranged is vertical. The boat 11 set on the gate 9 is provided by the elevator so that the inner tube 2
Is carried into the processing chamber 4 from the furnace port 5 and is kept in the processing chamber 4 while being supported by the gate 9. In this state, the gate 9 is in a state where the furnace port 5 is sealed.

The inside of the process tube 1 is evacuated to a predetermined degree of vacuum (several Torr or less) by the exhaust port 7,
Further, the inside of the process tube 1 is uniformly heated to a predetermined temperature (for example, about 400 ° C.) by the heater 20.

Next, a predetermined raw material gas 21 is supplied to the inlet 23 of the gas introduction nozzle 22,
2 flows out from the plurality of outlets 24 and flows into the processing chamber 4 of the inner tube 2. For example, when doped polysilicon is diffused,
Monosilane (SiH ₄ ) and phosphine (PH ₃ ) are introduced into the processing chamber 4.

The raw material gas 21 introduced into the processing chamber 4 is provided with upper, lower, and lower exhaust holes 25 formed on the side wall of the inner tube 2.
From a, 25b, and 25c, the gas flows out to an exhaust path 8 formed by a gap between the inner tube 2 and the outer tube 3, and is exhausted from an exhaust port 7 formed in a cap 6 located at a lower end of the outer tube 3.

Here, the gas introduction nozzle 22 and the upper, middle, and lower exhaust holes 25a, 25b, 25c, and the exhaust port 7 are disposed so as to face each other at a distance of 180 degrees from each other. The source gas 21 jetted from each jet port 24 flows gently in the processing chamber 4 almost linearly toward the exhaust holes 25a, 25b, and 25c on the opposite side. It flows into a laminar state. Then, each wafer 10
The raw material gas 21 is diffused satisfactorily over the entire surface of each wafer 10, and uniformly contacts the entire surface within each wafer 10.

Further, since each of the plurality of ejection ports 24 is disposed so as to face each other between the vertically adjacent wafers 10, the source gas 21 ejected from each ejection port 24 is It flows into each of the spaces between the vertically adjacent wafers 10, and flows reliably in parallel. For this reason, the source gas 21 diffuses more satisfactorily over the entire surface of each wafer 10 and makes more uniform contact over the entire surface of each wafer 10.

Further, since the cross-sectional area of the flow path of the gas introduction nozzle 22 is set to be larger than the total opening area of the plurality of outlets 24, the amount of the raw material gas 21 ejected from each outlet 24 is sufficient. Therefore, sufficient contact is ensured in each wafer 10 to allow the CVD reaction of the source gas 21 to proceed efficiently.

While touching the surface of the wafer 10,
Flow in parallel in the space between matching wafers 10
By the CVD reaction of the source gas 21, the surface of the wafer 10 is
Is deposited with a CVD film. That is, the pile on each wafer 10
The product is that of the space between the upper and lower wafers 10
C of the raw material gas 21 gently flowing in a laminar flow state
Caused by the VD reaction. For example, monosilane (SiH
_Four ) And phosphine (PH _Three ) And where each was introduced
In this case, a doped polysilicon film is deposited on the wafer 10.
Will be in a state where

At this time, since the source gas 21 is uniformly contacted over the entire surface of each wafer 10, the deposited state of the CVD film is uniform in both the film thickness and the film quality throughout each wafer 10. The fact that the thickness of the CVD film is entirely uniform in the wafer 10 means that it is not necessary to consider the occurrence of a portion where the thickness is insufficient, so that the deposition rate can be relatively improved. means.

The deposited film thickness of the CVD film can be controlled by the processing time. Further, the degree of progress of the chemical reaction can be controlled by adjusting the flow rate and flow rate of the raw material gas, the concentration, the heating temperature of the heater 20, the degree of vacuum in the process tube 1, and the like.

By the way, since the exhaust port 7 is formed on the side wall of the cap 6 on the side opposite to the gas introduction nozzle 22, the exhaust port 7 is formed by an exhaust passage 8 formed by a gap between the inner tube 2 and the outer tube 3. Is arranged at one position on the lower end portion on the opposite side of the raw material gas introduction nozzle 22 of the source gas introduction nozzle 22, so that the exhaust resistance (conductance Δ
P) is in a different state due to the upper, middle and lower exhaust holes 25a, 25b, 25c. As a result, the upper, middle and lower exhaust holes 25
If the opening areas of a, 25b, and 25c are set to be the same, the upper exhaust hole is more difficult to exhaust (has a larger conductance) than the lower exhaust hole. When the upper exhaust hole is more difficult to exhaust than the lower exhaust hole, the flow rate of the source gas 21 in the processing chamber 4 is higher in the lower region and lower in the upper region. Is thinner in the lower region and thicker in the upper region.

However, in this embodiment, the opening area Sa of the upper exhaust hole 25a, the opening area Sb of the middle exhaust hole 25b, and the opening area Sc of the lower exhaust hole 25c are Sa.
>Sb> Sc, the conductance Pa of the upper exhaust hole 25a, the conductance Pb of the middle exhaust hole 25b, and the conductance Pc of the lower exhaust hole 25c are Pa <Pb <.
Because of Pc, the flow rate of the source gas in the processing chamber 4 is entirely uniform regardless of the upper, middle, and lower regions.
As a result, in the present embodiment, the film thickness and the film quality formed on each wafer 10 of the group of wafers 10 in the processing chamber 4 are entirely uniform irrespective of the arrangement of the upper, middle, and lower portions of the group of wafers 10.

After the desired CVD film (for example, a doped polysilicon film) is deposited as described above, the furnace port 5 is opened by lowering the gate 9, and the furnace port 5 is held by the boat 11. In this state, a group of wafers 10 is carried out of the process tube 1 from the furnace port 5.

According to the above embodiment, the following effects can be obtained.

1) By arranging a plurality of exhaust holes in the side wall of the inner tube in the vertical direction, the raw material gas introduced into the inner tube is supplied from the plurality of exhaust holes formed in the side wall of the inner tube through the inner tube. Since the gas can flow out into the gap between the tube and the outer tube and can be exhausted from the exhaust port, the source gas flowing in the inner tube can flow in a laminar flow parallel to each wafer. Further, by concentrating the exhaust port at one location of the process tube like the side wall of the cap, the structure can be simplified, and the initial cost and running cost can be reduced.

2) By flowing the raw material gas in parallel to each wafer in a laminar flow state, the raw material gas can be satisfactorily diffused over the entire surface of each wafer and can be uniformly contacted throughout the wafer. The state of film deposition can be made uniform both in film thickness and film quality throughout the wafer, and the film formation rate can be relatively improved.

3) The opening area Sa of the upper exhaust hole, the opening area Sb of the middle exhaust hole, and the opening area Sc of the lower exhaust hole provided in the inner tube are set so as to satisfy Sa>Sb> Sc. By setting, the conductance Pa of the upper exhaust hole, the conductance Pb of the middle exhaust hole, and the conductance Pc of the lower exhaust hole are Pa <P.
Since b <Pc, the flow rate of the source gas in the processing chamber becomes uniform irrespective of the upper, middle, and lower regions, and as a result, the film thickness and film quality formed on each wafer of the wafer group in the processing chamber Can be made uniform overall irrespective of the arrangement of the upper, middle, and lower parts in the wafer group.

4) By making the film thickness and the film quality formed on each wafer in the processing chamber uniform regardless of the upper, middle, and lower regions, the entire wafer group long in the processing chamber is longitudinally arranged. Since the CVD film can be formed uniformly over the entire process, the thickness and quality of the CVD film in one process can be made uniform, and the quality and reliability can be improved.

5) By forming a CVD film uniformly over the whole of the group of wafers longitudinally arranged in the processing chamber, a uniform processing state can be obtained even if the group of wafers is arranged in the entire longitudinal direction of the processing chamber. Because it can be secured, the number of sheets processed at one time can be relatively increased,
As a result, the throughput of the CVD apparatus and the CVD processing operation can be increased.

6) Each of the plurality of ejection ports formed in the gas introduction nozzle for introducing the source gas into the processing chamber is arranged so as to face the space between the vertically adjacent wafers, so that each ejection port is formed. Since the raw material gas ejected from the outlet can be flowed into each of the spaces between the vertically adjacent wafers, the raw material gas can be gently flown in a laminar state in parallel with the wafer without fail, The source gas can be diffused more satisfactorily over the entire surface of the wafer and can be brought into more uniform contact.

7) By setting the flow path cross-sectional area of the gas introduction nozzle to be larger than the total opening area of the plurality of ejection ports, it is possible to sufficiently secure the supply amount of the source gas to each wafer by each ejection port. Therefore, the chemical reaction of the source gas can efficiently proceed.

The present invention is not limited to the above embodiment, and it goes without saying that various changes can be made without departing from the spirit of the present invention.

For example, the number of the plurality of exhaust holes formed in the side wall of the inner tube is not limited to three in the upper, middle and lower portions, but may be two or four or more. The shape of the exhaust hole is not limited to a circle,
It may be oval or polygonal.

The number of jet ports opened in the gas introduction nozzle is not limited to the number of wafers to be processed, but can be increased or decreased in accordance with the number of wafers to be processed. For example, the spouts are not limited to being arranged between the vertically adjacent wafers, but may be arranged every two or three wafers.

The number of gas introduction nozzles is not limited to two in the process tube, but may be one or three or more depending on the type of gas to be introduced.

The exhaust port for exhausting the inside of the process tube is:
Not only in the cap, but also in the outer tube.

In the above embodiment, the deposition of a doped polysilicon film has been described. However, the CVD technique according to the present invention is not limited to the deposition of a doped polysilicon oxide film or a silicon nitride film.
The present invention can be applied to all techniques for forming a VD film. Further, the substrate processing technology according to the present invention can be applied to all substrate processing technologies such as a diffusion technology and a heat treatment technology.

In the above embodiment, the case where the processing is performed on the wafer has been described. However, the processing target may be a photomask, a printed wiring board, a liquid crystal panel, a compact disk, a magnetic disk, or the like.

In the above embodiment, the case where the present invention is applied to a batch type vertical hot wall type reduced pressure CVD apparatus has been described. However, the present invention is not limited to this, and a horizontal hot wall type reduced pressure CVD apparatus, a diffusion apparatus, an oxide film forming apparatus and a heat treatment apparatus The present invention can be applied to all substrate processing apparatuses such as apparatuses.

[0050]

According to the present invention, by introducing a plurality of exhaust holes in the side wall of the inner tube in the longitudinal direction, the gas introduced into the inner tube is supplied from the plurality of exhaust holes formed in the side wall of the inner tube. The gas flowing through the inner tube can flow in parallel to the respective substrates because the gas can flow out into the gap between the inner tube and the outer tube and be exhausted from the exhaust port. As a result, the gas can be satisfactorily diffused over the entire surface of each substrate and can be uniformly contacted throughout the substrate, so that the processing state can be made uniform throughout the substrate and the processing speed can be relatively increased. Can be improved.

By setting the opening areas of the plurality of exhaust holes formed in the inner tube so as to increase as the distance from the exhaust port increases, the flow velocity of the gas over the entire length of the processing chamber can be controlled irrespective of the distance from the exhaust port. Since the settings can be made uniform, the processing state formed on each substrate in the processing chamber can be made uniform overall regardless of the distance from the exhaust port. As a result, the processing can be uniformly performed over the entire substrate group arranged in the inner tube in the longitudinal direction, so that the processing state in one processing can be uniform, and the quality and reliability of the processing can be improved. Can be enhanced.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view showing a batch type vertical hot wall type reduced pressure CVD apparatus according to an embodiment of the present invention.

FIG. 2 is an enlarged partial longitudinal sectional view.

FIG. 3 is an enlarged partial cross-sectional view.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Process tube, 2 ... Inner tube, 3 ... Outer tube, 4 ... Processing chamber, 5 ... Furnace opening, 6 ... Cap, 7
... exhaust port, 8 ... exhaust path, 9 ... gate, 10 ... wafer (substrate), 11 ... boat, 12, 13 ... end plate, 14 ... holding member, 15 ... holding groove, 16, 17 ... auxiliary end plate, 18 ... Auxiliary holding member, 19 ... Holding groove, 20 ... Heater, 21 ... Source gas, 22 ... Gas introduction nozzle, 23 ... Gas introduction port, 24
... spouts, 25a, 25b, 25c ... exhaust holes.

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4K030 AA06 BA29 BA40 CA12 EA05 EA11 FA10 GA02 KA04 KA09 KA23 5F045 AA06 AB03 AB33 AC01 BB03 BB08 BB09 DP19 EC02 EE20 EF03 EF08 EF20

Claims (5)

[Claims] 1. A process tube comprising an inner tube into which a substrate is carried, an outer tube surrounding the inner tube, a gas introduction nozzle for introducing a gas into the inner tube, and an exhaust gas for exhausting the inside of the process tube. In the substrate processing apparatus having a port, a plurality of exhaust holes are formed in the side wall of the inner tube so as to be arranged in the longitudinal direction, and the opening areas of the exhaust holes are changed depending on a position with respect to the exhaust port. A substrate processing apparatus characterized by the above-mentioned. 2. The substrate processing apparatus according to claim 1, wherein an opening area of each of the exhaust holes is set to increase as the distance from the exhaust port increases. 3. The gas introduction nozzle is provided with a plurality of ejection ports arranged in the longitudinal direction, and the number of the ejection ports corresponds to the number of the substrates to be processed. The substrate processing apparatus according to claim 1 or 2, wherein 4. The substrate processing apparatus according to claim 3, wherein the number of the ejection ports matches the number of the substrates to be processed. 5. The substrate according to claim 1, wherein a cross-sectional area of the flow path of the gas introduction nozzle is set to be larger than a total sum of the opening areas of the jet port group. Processing equipment.