JPS63310112A - Manufacture apparatus for semiconductor integrated circuit device - Google Patents
Manufacture apparatus for semiconductor integrated circuit deviceInfo
- Publication number
- JPS63310112A JPS63310112A JP14744287A JP14744287A JPS63310112A JP S63310112 A JPS63310112 A JP S63310112A JP 14744287 A JP14744287 A JP 14744287A JP 14744287 A JP14744287 A JP 14744287A JP S63310112 A JPS63310112 A JP S63310112A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- semiconductor substrates
- semiconductor substrate
- flow
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000010438 heat treatment Methods 0.000 abstract description 9
- 238000009792 diffusion process Methods 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 239000003795 chemical substances by application Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体集積回路装置の製造装置、特にガス導入
部と開放部を有する円筒型炉心管を備える半導体基板の
熱処理装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an apparatus for manufacturing semiconductor integrated circuit devices, and more particularly to a heat treatment apparatus for semiconductor substrates comprising a cylindrical furnace tube having a gas introduction section and an open section.
従来、例えば酸化膜の形成に用いられるようなガス導入
部と開放部を有する円筒型炉心管を備える熱処理装置で
は、ガスの流れに対して半導体基板を垂直に配置して処
理している。2. Description of the Related Art Conventionally, in a heat treatment apparatus equipped with a cylindrical furnace tube having a gas introduction part and an open part, such as those used for forming an oxide film, semiconductor substrates are placed perpendicularly to the flow of gas and processed.
上述した従来の熱処理装置では、第４図から明らかのよ
うにガスの流れに対して半導体基板１を垂直に配置して
いる為、半導体基板間にガスが流れ込みに＜＜、熱処理
工程で成長する酸化膜や、不純物拡散の面内不均一性が
生じ、歩留りを低下させる要因となっていた。In the conventional heat treatment apparatus described above, as is clear from FIG. 4, the semiconductor substrate 1 is arranged perpendicularly to the gas flow, so that the gas flows between the semiconductor substrates and grows during the heat treatment process. In-plane non-uniformity of oxide film and impurity diffusion occurs, which causes a decrease in yield.
上述した従来の熱処理装置に対し、本発明は、半導体基
板をガスの流れに対して水平に配置させる半導体基板支
持台と、該半導体基板支持台にガスの流れを半導体基板
間へ集束させる開孔付円板を持つという相違点を有する
。In contrast to the conventional heat treatment apparatus described above, the present invention provides a semiconductor substrate support for arranging the semiconductor substrate horizontally with respect to the gas flow, and an opening in the semiconductor substrate support for concentrating the gas flow between the semiconductor substrates. The difference is that it has an attached disc.
本発明はガス導入部と開放部を有する円筒型炉心管、備
えた半導体基板の熱処理装置において、半導体基板をガ
スの流れに対して水平に配置する半導体基板支持台とガ
スの流れを半導体基板間へ集束させる開孔付円板を有し
ている。The present invention provides a heat treatment apparatus for semiconductor substrates equipped with a cylindrical reactor core tube having a gas introduction part and an open part. It has an apertured disk that focuses the beams on the beam.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図、第２図、第３図に示すように半導体基板４ｔ−
ガスの流れに対して水平に配置する。半導体基板支持台
２はガスの流れを半導体基板間へ集束させる開孔付円板
３を有する。As shown in FIGS. 1, 2, and 3, the semiconductor substrate 4t-
Position horizontally to the gas flow. The semiconductor substrate support 2 has an apertured disk 3 that focuses the gas flow between the semiconductor substrates.
本発明によれば開孔付円板３により集束したガスは半導
体基板間へ均一に流れ込む。According to the present invention, the gas focused by the apertured disk 3 uniformly flows between the semiconductor substrates.
以上説明したように、本発明によれば、炉心管をガスの
流れに対して水平におき、開孔付円板でガスの流れを半
導体基板間き集束させることＫよシ、熱処理工程で成長
する酸化膜や不純物熱拡散の面内均一性を向上させる効
果がある。As explained above, according to the present invention, the furnace tube is placed horizontally with respect to the gas flow, and the gas flow is focused between the semiconductor substrates using the perforated disk. This has the effect of improving the in-plane uniformity of the oxide film and impurity thermal diffusion.
また、上述したガスを集束させる円板の開孔は複数であ
っても同様の効果が期待できる。Moreover, the same effect can be expected even if there are a plurality of holes in the disk for converging the gas described above.
第１図は本発明の実施例を示す側面図、第２図は第１図
のＡ−Ａ線断面図、第３図は第１図のＢ−Ｂ線断面図、
第４図は従来の熱処理装置の断面図である。
尚、図において、
１・・・・・・炉心管、２・・・・・・半導体基板支持
台、３・・・・・・開孔付円板、４・・・・・・半導体
基板である。
代理人 弁理士 内 原 晋（”。
、 ＩFIG. 1 is a side view showing an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line A-A in FIG. 1, and FIG. 3 is a cross-sectional view taken along line B-B in FIG.
FIG. 4 is a sectional view of a conventional heat treatment apparatus. In the figure, 1...furnace tube, 2...semiconductor substrate support, 3...disk with holes, 4...semiconductor substrate. be. Agent Patent Attorney Susumu Uchihara (”., I
Claims (1)
体集積回路装置の製造装置において、半導体基板をガス
の流れに対して水平に配置する半導体基板支持台と、該
支持台の端部に平行配置された半導体基板領域に対向す
る部分が開孔され、円筒型炉心管の断面に平行な円板を
有することを特徴とする半導体集積回路の製造装置。In a semiconductor integrated circuit device manufacturing apparatus equipped with a cylindrical furnace tube having a gas introduction part and an open part, a semiconductor substrate support stand for arranging a semiconductor substrate horizontally with respect to a gas flow, and an end portion of the support stand are provided. 1. An apparatus for manufacturing a semiconductor integrated circuit, comprising a circular plate parallel to the cross section of a cylindrical furnace tube, with holes formed in a portion facing semiconductor substrate regions arranged in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14744287A JPS63310112A (en) | 1987-06-12 | 1987-06-12 | Manufacture apparatus for semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14744287A JPS63310112A (en) | 1987-06-12 | 1987-06-12 | Manufacture apparatus for semiconductor integrated circuit device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63310112A true JPS63310112A (en) | 1988-12-19 |
Family
ID=15430432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14744287A Pending JPS63310112A (en) | 1987-06-12 | 1987-06-12 | Manufacture apparatus for semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63310112A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013138180A (en) * | 2011-12-01 | 2013-07-11 | Mitsubishi Electric Corp | Semiconductor wafer heat treatment method, solar cell manufacturing method and heat treatment apparatus |
-
1987
- 1987-06-12 JP JP14744287A patent/JPS63310112A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013138180A (en) * | 2011-12-01 | 2013-07-11 | Mitsubishi Electric Corp | Semiconductor wafer heat treatment method, solar cell manufacturing method and heat treatment apparatus |
| US8835333B2 (en) | 2011-12-01 | 2014-09-16 | Mitsubishi Electric Corporation | Heat treatment method of semiconductor wafers, manufacturing method of solar battery, and heat treatment device |
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