JPH04304652A - Boat for heat treating device - Google Patents

Boat for heat treating device

Info

Publication number
JPH04304652A
JPH04304652A JP3068360A JP6836091A JPH04304652A JP H04304652 A JPH04304652 A JP H04304652A JP 3068360 A JP3068360 A JP 3068360A JP 6836091 A JP6836091 A JP 6836091A JP H04304652 A JPH04304652 A JP H04304652A
Authority
JP
Japan
Prior art keywords
wafer
boat
top plate
heat treatment
bottom plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3068360A
Other languages
Japanese (ja)
Inventor
Yoji Tsuchiyama
洋史 土山
Hiroshi Otsubo
宏 大坪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Original Assignee
Hitachi Tokyo Electronics Co Ltd
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Tokyo Electronics Co Ltd, Hitachi Ltd filed Critical Hitachi Tokyo Electronics Co Ltd
Priority to JP3068360A priority Critical patent/JPH04304652A/en
Publication of JPH04304652A publication Critical patent/JPH04304652A/en
Pending legal-status Critical Current

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE:To facilitate maintenance upon occurrence of a dislocation of a thermal stress at the time of treating a large-diameter wafer at a high temperature, damage or deformation of a wafer holder and to further prevent a local application of a load to the vicinity of the holder by employing a member in contact with the wafer, having the same physical properties as those of the wafer. CONSTITUTION:A boat body in which a top plate 1 and a bottom plate 2 made of quartz or SiC are integrated by connecting round rods 3a, 3b, 3c of the same material by welding, of a boat used for a vertical bottom-open type heat treating device, is obtained, groove rods 4a, 4b, 4c, 4d having grooves 5a formed at a predetermined interval in a longitudinal direction and the same physical properties as those of a wafer are detachably mounted between the plates 1 and 2, and the wafer is supported to the grooves 5a of the rods 4a-4d.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明はウェハを保持するための
技術、特に、半導体装置の製造に採用されて酸化、拡散
などを行うための熱処理装置に用いて効果のある技術に
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for holding a wafer, and more particularly to a technique effective for use in a heat treatment apparatus for oxidation, diffusion, etc. employed in the manufacture of semiconductor devices.

【0002】0002

【従来の技術】酸化、拡散などを行うに際しては、ウェ
ハの処理面を覆うことなく多数枚のウェハを同時に保持
して石英反応管などを用いた熱処理室内に設置する必要
があり、このためにボートと称する治具が用いられてい
る。
[Prior Art] When performing oxidation, diffusion, etc., it is necessary to hold a large number of wafers at the same time without covering the processing surface of the wafers and install them in a heat treatment chamber using a quartz reaction tube or the like. A jig called a boat is used.

【0003】その具体例として、例えば、特開昭58−
65369号公報があり、4本の柱及びこれら柱を周縁
に配しながら、この柱と同一材料を用いて作られた天板
及び底板により上下端を固定するように一体成形で加工
する構成が提案されている。
[0003] As a specific example, for example, Japanese Patent Application Laid-Open No. 1983-
No. 65369 discloses a structure in which four pillars are arranged around the periphery, and the upper and lower ends are fixed by a top plate and a bottom plate made of the same material as the pillars. Proposed.

【0004】また、特開昭56−53266公報では、
シリコン材料を用いて柱、天板及び底板を個別に作成し
、これらを組み立てる構成が提案されている。
[0004] Also, in Japanese Patent Application Laid-open No. 56-53266,
A configuration has been proposed in which a pillar, a top plate, and a bottom plate are individually made using a silicon material, and then assembled together.

【0005】なお、縦型拡散装置には大別してボート挿
入口を上側に設けた上方開放型とボート挿入口を下側に
設けた下方開放型があり、上方開放型はボートを吊り下
げた状態で装置へ挿入し、下方開放型はキャップに載置
したボートを下側から押し上げるようにして挿入する。
[0005] The vertical diffusion device can be roughly divided into two types: the top-open type with the boat insertion port on the top and the bottom-open type with the boat insertion port on the bottom.The top-open type allows the boat to be suspended. Insert it into the device with the bottom-opening type by pushing up the boat placed on the cap from below.

【0006】[0006]

【発明が解決しようとする課題】ところが、上記特開昭
58−65369号公報及び、特開昭56−53266
号公報に記載された従来技術には、以下の問題のあるこ
とを本発明者は見出した。
[Problems to be Solved by the Invention] However, the above-mentioned Japanese Patent Application Laid-Open No. 58-65369 and Japanese Patent Application Laid-Open No. 56-53266
The present inventor found that the prior art described in the publication has the following problems.

【0007】すなわち、大口径(例えば、6〜8インチ
)のウェハを1000℃以上の高温雰囲気下に置くと、
ウェハ面内に温度分布(=温度差)が生じ、これが熱応
力転位の発生を招き、ウェハに結晶欠陥を生じさせ、I
C製品の電気的特性に悪影響を及ぼすという問題のある
ことが本発明者によって見出された。
[0007] That is, when a large diameter (for example, 6 to 8 inch) wafer is placed in a high temperature atmosphere of 1000°C or higher,
Temperature distribution (=temperature difference) occurs within the wafer surface, which leads to the generation of thermal stress dislocations, which causes crystal defects in the wafer and I
The inventor of the present invention has discovered that there is a problem in that the electrical characteristics of C products are adversely affected.

【0008】さらに、特開昭58−65369号公報に
記載の構成では、一体構成にされているために、変形や
破損が生じた際には、メンテナンスが困難になる。
[0008]Furthermore, in the structure described in Japanese Patent Application Laid-open No. 58-65369, since it is an integral structure, maintenance becomes difficult if deformation or damage occurs.

【0009】また、ボートにセットされた大径のウェハ
は、周縁の一部が柱状体に点状に保持されるので、ウェ
ハの自重が周縁の数カ所にかかり、局部的に荷重が加わ
るためにウェハを変形させることになる。
[0009] Also, since a large diameter wafer set on a boat has a part of its periphery held in a dotted manner by a columnar body, the wafer's own weight is applied to several parts of its periphery, causing local loads to be applied. This will deform the wafer.

【0010】そこで、本発明の目的は、大口径ウェハの
高温処理時における熱応力転位の発生を防止することの
できる技術を提供することにある。
SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a technique that can prevent the occurrence of thermal stress dislocation during high-temperature processing of large-diameter wafers.

【0011】本発明の他の目的は、ウェハ保持部の破損
や変形に伴うメンテナンスを容易に行うことのできる技
術を提供することにある。
Another object of the present invention is to provide a technique that allows easy maintenance in the event of damage or deformation of the wafer holder.

【0012】さらに本発明の他の目的は、ウェハの保持
部近傍に荷重が局部的に加わるのを防止することのでき
る技術提供することにある。
Still another object of the present invention is to provide a technique that can prevent a load from being locally applied to the vicinity of a wafer holding section.

【0013】本発明の前記ならびにその他の目的と新規
な特徴は、本明細書の記述及び添付図面から明らかにな
るであろう。
The above and other objects and novel features of the present invention will become apparent from the description of this specification and the accompanying drawings.

【0014】[0014]

【課題を解決するための手段】本願において開示される
発明のうち、代表的なものの概要を簡単に説明すれば以
下の通りである。
[Means for Solving the Problems] Among the inventions disclosed in this application, a brief overview of typical inventions is as follows.

【0015】すなわち、縦型でかつ下方開放型の熱処理
装置に用いられるボートであって、天板及び下板を複数
の連結部材で連結して一体化すると共に各々に同一材料
を用いたボート本体と、ウェハを支持するための溝を有
して前記天板及び前記下板間に着脱自在に取り付けられ
ると共に、物理的特性がウェハに等しいウェハ保持部材
とを設けるようにしている。
[0015] That is, the boat is used in a vertical and downwardly open type heat treatment apparatus, and the boat body has a top plate and a bottom plate connected and integrated by a plurality of connecting members, and each of which is made of the same material. and a wafer holding member which has a groove for supporting the wafer, is detachably attached between the top plate and the lower plate, and has physical characteristics equal to those of the wafer.

【0016】[0016]

【作用】上記した手段によれば、天板、下板及び連結部
材の3点を溶接などで一体化して本体を構成し、この本
体に着脱自在に取り付けられると共に、物理的特性がウ
ェハに等しいウェハ保持部材にのみウェハが支持される
。したがって、ウェハの熱応力転位の発生を低減するこ
とができる。
[Operation] According to the above-mentioned means, the top plate, the bottom plate, and the connecting member are integrated by welding or the like to form a main body, which is detachably attached to the main body, and whose physical characteristics are the same as those of a wafer. The wafer is supported only by the wafer holding member. Therefore, the occurrence of thermal stress dislocations in the wafer can be reduced.

【0017】[0017]

【実施例】図1は本発明による熱処理装置用ボートの一
実施例を示す斜視図である。また、図2は溝棒の実装状
態を示す断面図である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a perspective view showing an embodiment of a boat for heat treatment equipment according to the present invention. Moreover, FIG. 2 is a sectional view showing the mounting state of the grooved rod.

【0018】石英またはSiCを用いて加工対象のウェ
ハよりやや大径の円板形の天板1及び下板2が形成され
、両者は3本の石英またはSiCによる円柱状の丸棒3
a,3b,3c(連結部材)によって、図2のように固
定されている。天板1及び下板2と丸棒3a,3b,3
cは溶接によって一体的に固定されている。丸棒3a,
3b,3cの各々は、下板2の中心に対し同一半径位置
に立設され、かつ水平方向からのウェハの出し入れに支
障がないように、いずれか1方向に対しウェハ幅分の空
間が確保されている。
A disk-shaped top plate 1 and a bottom plate 2 having a slightly larger diameter than the wafer to be processed are formed using quartz or SiC, and both are made of three cylindrical round rods 3 made of quartz or SiC.
They are fixed by a, 3b, and 3c (connecting members) as shown in FIG. Top plate 1, bottom plate 2 and round bars 3a, 3b, 3
c is integrally fixed by welding. Round bar 3a,
Each of 3b and 3c is erected at the same radial position with respect to the center of the lower plate 2, and a space corresponding to the width of the wafer is secured in one direction so that there is no problem in loading and unloading the wafer from the horizontal direction. has been done.

【0019】さらに、ウェハの外形相当の位置に4本の
溝棒4a,4b,4c,4d(ウェハ保持部材)が立設
状態で天板1及び下板2に遊嵌されている。この溝棒4
a,4b,4c,4dも、丸棒3a,3b,3cにおい
て確保されたウェハ出入用空間に合わせてウェハ出入用
空間が設けられている。
Further, four groove rods 4a, 4b, 4c, and 4d (wafer holding members) are loosely fitted into the top plate 1 and the bottom plate 2 in an upright position at positions corresponding to the outer shape of the wafer. This groove rod 4
A, 4b, 4c, and 4d are also provided with a wafer loading/unloading space corresponding to the wafer loading/unloading space secured in the round bars 3a, 3b, and 3c.

【0020】図3は溝棒4a,4b,4c,4dの詳細
構成を示す斜視図である。
FIG. 3 is a perspective view showing the detailed structure of the groove rods 4a, 4b, 4c, and 4d.

【0021】溝棒4a,4b,4c,4dの各々の天板
1及び下板2の中心に面した部分には、その長さ方向に
一定間隔にウェハの厚みよりやや広い幅の溝5aが円周
方向に直交させて設けられている。この溝棒4a,4b
,4c,4dは、図4に示すように、下部に板状の突起
5bが設けられており、溝5aが正面から回動するのを
防止できるようにしている。そして溝棒4a,4b,4
c,4dを保持するために、下板2の上面には座ぐり穴
6が穿設され、天板1には貫通孔7が設けられている。 座ぐり穴6には溝棒4a,4b,4c,4dの下端が挿
入され、上端が貫通孔7に挿入される。
Groove bars 4a, 4b, 4c, and 4d each have grooves 5a having a width slightly wider than the thickness of the wafer at regular intervals in the length direction of the portion facing the center of the top plate 1 and bottom plate 2. It is provided perpendicular to the circumferential direction. These groove rods 4a, 4b
, 4c, and 4d, as shown in FIG. 4, are provided with a plate-shaped projection 5b at the bottom to prevent the groove 5a from rotating from the front. and groove rods 4a, 4b, 4
A counterbore hole 6 is provided in the upper surface of the lower plate 2, and a through hole 7 is provided in the top plate 1 to hold the parts 4c and 4d. The lower ends of the grooved rods 4a, 4b, 4c, and 4d are inserted into the counterbore holes 6, and the upper ends are inserted into the through holes 7.

【0022】溝棒4a,4b,4c,4dは、ウェハと
物理的特性がほぼ等しいポリシリコンが用いられる。ポ
リシリコン、石英、SiCの各々とウェハの材料である
シリコンと比較すると、次のような特徴がある。
The groove bars 4a, 4b, 4c, and 4d are made of polysilicon, which has approximately the same physical characteristics as the wafer. When polysilicon, quartz, and SiC are compared with silicon, which is the material of the wafer, they have the following characteristics.

【0023】[0023]

【表1】[Table 1]

【0024】このように、ポリシリコンはウェハの材料
と物理的特性がほぼ等しいので、従来問題であった熱伝
導及び熱容量に差が生ぜず、高温処理時のウェハの温度
分布は均一になる。しかし、ポリシリコンには溶接が行
えない、石英などに比べて強度が弱いなどの欠点がある
。そこで、本発明では溝棒4a,4b,4c,4dとは
別に、溶接が可能で十分な強度を有する丸棒3a,3b
,3cを設け、天板1と下板2を一体的に固定し、必要
な強度を得ている。
As described above, since polysilicon has almost the same physical properties as the wafer material, there is no difference in heat conduction and heat capacity, which was a problem in the past, and the temperature distribution of the wafer during high-temperature processing becomes uniform. However, polysilicon has drawbacks such as not being able to be welded and having lower strength than quartz. Therefore, in the present invention, in addition to the grooved bars 4a, 4b, 4c, and 4d, round bars 3a, 3b, which can be welded and have sufficient strength, are provided.
, 3c are provided to integrally fix the top plate 1 and the bottom plate 2 to obtain the necessary strength.

【0025】上記実施例を組み立てるに際しては、まず
、丸棒3a,3b,3cによって一体化した天板1と下
板2に対し、溝棒4a,4b,4c,4dを一本づつ取
り付けていく。最初に溝棒4aを取り付けるとすると、
まず、その上部(突起5bが設けられていない側)を貫
通孔7に深く挿入し、ついで溝棒4aが下板2上で垂直
になるようにすると共に、溝5aを中心側に向ける。さ
らに、この状態のまま溝棒4aを降下し、突起5bを天
板1の貫通孔7に挿入する。同様にして、溝棒4b,4
c,4dを順次取り付けると、図1の状態になる。
When assembling the above embodiment, first, groove rods 4a, 4b, 4c, and 4d are attached one by one to the top plate 1 and bottom plate 2, which are integrated by round rods 3a, 3b, and 3c. . If you install the groove rod 4a first,
First, the upper part (the side where the protrusion 5b is not provided) is deeply inserted into the through hole 7, and then the groove rod 4a is made vertical on the lower plate 2, and the groove 5a is directed toward the center. Further, in this state, the groove rod 4a is lowered and the protrusion 5b is inserted into the through hole 7 of the top plate 1. Similarly, groove rods 4b, 4
If c and 4d are attached in sequence, the state shown in Fig. 1 will be obtained.

【0026】ウェハを装着するに際しては、同じ高さ位
置にある溝棒4a,4b,4c,4dの溝5aの各々に
周縁を差し込むようにする。この作業をウェハを入れる
毎に異なる溝5aに差し込むこむことにより、多数枚の
ウェハを重ねた状態でボートにセットすることができる
When mounting a wafer, the peripheral edge is inserted into each of the grooves 5a of the groove rods 4a, 4b, 4c, and 4d located at the same height. By inserting each wafer into a different groove 5a, a large number of wafers can be stacked and set on the boat.

【0027】本実施例によれば、ウェハとポリシリコン
製の溝棒4a,4b,4c,4dとは熱伝達係数及び熱
容量が同一であるので、ウェハの温度分布は全面で均一
になり、熱応力を低減できるので、結晶欠陥を生じるこ
とがない。また、本実施例では、ボート本体に溝棒4a
,4b,4c,4dを組み付ける構成にしているため、
破損や変形を生じても、部品の交換や修理は容易に行う
ことができる。
According to this embodiment, since the wafer and the polysilicon groove rods 4a, 4b, 4c, and 4d have the same heat transfer coefficient and heat capacity, the temperature distribution of the wafer is uniform over the entire surface, and the heat is Since stress can be reduced, crystal defects will not occur. In addition, in this embodiment, the groove rod 4a is provided in the boat body.
, 4b, 4c, and 4d are assembled, so
Even if damage or deformation occurs, parts can be easily replaced or repaired.

【0028】図5は本発明による熱処理装置用ボートの
他の実施例を示す平面図であり、図6は図5の正面図で
ある。図6は、ウェハをボートに装着した状態が示され
ている。
FIG. 5 is a plan view showing another embodiment of the boat for heat treatment equipment according to the present invention, and FIG. 6 is a front view of FIG. FIG. 6 shows a state in which wafers are mounted on a boat.

【0029】本実施例は、前記実施例が溝棒4a,4b
,4c,4dによってウェハの周縁の数カ所を保持する
構成にしていたのに対し、ウェハ12をポリシリコン製
の円板状でウェハより大径の保持部材8上に載置する構
成にしたところに特徴がある。本実施例では、前記実施
例の丸棒3a,3b,3cに代えて、この丸棒3a,3
b,3cと溝棒4a,4b,4c,4dの機能を併せ持
った溝付きで石英またはSiC製のウェハ保持柱9a,
9b,9c,9d(連結部材)を用い、このウェハ保持
柱9a,9b,9c,9dの上下に天板10と下板11
(共に石英またはSiC製)を溶接によって固定してい
る。ウェハ保持柱9a,9b,9c,9dには、溝棒4
a,4b,4c,4dと同様に長さ方向に一定間隔に溝
が設けられ、この溝へ図6に示すように保持部材8の各
々が係止される。
In this embodiment, the groove rods 4a and 4b of the previous embodiment are used.
, 4c, and 4d to hold the wafer at several points around its periphery.In contrast, the wafer 12 is placed on a polysilicon disc-shaped holding member 8 having a diameter larger than that of the wafer. It has characteristics. In this embodiment, instead of the round bars 3a, 3b, 3c of the previous embodiment, these round bars 3a, 3
a grooved wafer holding column 9a made of quartz or SiC, which has the functions of the grooved rods 4a, 4b, 4c, and 4d;
A top plate 10 and a lower plate 11 are installed above and below the wafer holding columns 9a, 9b, 9c, and 9d using the wafer holding columns 9b, 9c, and 9d (connecting members).
(both made of quartz or SiC) are fixed by welding. Groove rods 4 are provided in the wafer holding columns 9a, 9b, 9c, and 9d.
Similarly to a, 4b, 4c, and 4d, grooves are provided at regular intervals in the length direction, and each of the holding members 8 is locked into the grooves as shown in FIG.

【0030】保持部材8は図8に示すように、中心部か
ら周辺方向に向かって開口部13が形成されている。こ
の開口部13は、ウェハ12を保持部材8へ自動機を用
いて載置し或いは取り出すことができるようにするため
に設けられている。開口部13が設けられた方向の中心
を境に左右90°の範囲には、ウェハ保持柱9a,9b
,9c,9dを設けず、ウェハ保持柱9a,9b,9c
,9d及びウェハ12を自由に出し入れできるようにし
ている。
As shown in FIG. 8, the holding member 8 has an opening 13 formed from the center toward the periphery. This opening 13 is provided so that the wafer 12 can be placed on or taken out from the holding member 8 using an automatic machine. Wafer holding columns 9a and 9b are located in a range of 90 degrees left and right with respect to the center in the direction in which the opening 13 is provided.
, 9c, 9d are not provided, and the wafer holding columns 9a, 9b, 9c are not provided.
, 9d and the wafer 12 can be freely taken in and taken out.

【0031】本実施例では、ボート本体は図7に示すよ
うに、石英(またはSiC)製のウェハ保持柱9a,9
b,9c,9dにより、同一材料の天板10と下板11
を溶接を用いて一体的に固定することにより作製できる
。このようにして完成したボート本体のウェハ保持柱9
a,9b,9c,9dの溝ごとに1枚の保持部材8を差
し込んでいくことによりボートが完成する。このような
ボートに対し、ウェハ12を保持部材8の各々の上面に
載置する。この状態で拡散装置内に設置されたボートは
高温雰囲気下で処理されるが、ウェハ12と保持部材8
の物理的性質が同じであるため、ウェハ12に温度差を
生じさせることがない。したがって、前記実施例と同様
に、ウェハには結晶欠陥が生じない。また、ウェハ12
の全面が保持部材8によって支持されるため、局部的な
荷重の印加が防止され、同様に結晶欠陥の発生を防止す
ることができる。
In this embodiment, as shown in FIG. 7, the boat body has wafer holding columns 9a, 9 made of quartz (or SiC).
b, 9c, and 9d, the top plate 10 and the bottom plate 11 are made of the same material.
It can be manufactured by integrally fixing them using welding. Wafer holding column 9 of the boat body completed in this way
The boat is completed by inserting one holding member 8 into each of the grooves a, 9b, 9c, and 9d. In such a boat, the wafers 12 are placed on the upper surface of each of the holding members 8. The boat installed in the diffusion device in this state is processed in a high temperature atmosphere, but the wafer 12 and the holding member 8
Since the physical properties of the wafers 12 and 12 are the same, no temperature difference occurs in the wafer 12. Therefore, similar to the embodiments described above, no crystal defects occur in the wafer. In addition, the wafer 12
Since the entire surface is supported by the holding member 8, local application of load can be prevented, and crystal defects can also be prevented from occurring.

【0032】以上、本発明者によってなされた発明を実
施例に基づき具体的に説明したが、本発明は前記実施例
に限定されるものではなく、その要旨を逸脱しない範囲
で種々変更可能であることは言うまでもない。
[0032] Above, the invention made by the present inventor has been specifically explained based on examples, but the present invention is not limited to the above-mentioned examples, and can be modified in various ways without departing from the gist thereof. Needless to say.

【0033】例えば、上記実施例においては、天板及び
下板を円板形にしたが、四角形、六角形などであっても
よい。同様に、丸棒3a〜3c、溝棒4a〜4d、ウェ
ハ保持柱9a〜9dは、丸棒状のものを用いたが、これ
に限らず角柱状のものであってもよい。
For example, in the above embodiment, the top plate and the bottom plate are disk-shaped, but they may also be square, hexagonal, or the like. Similarly, although the round bars 3a to 3c, the groove bars 4a to 4d, and the wafer holding columns 9a to 9d are shaped like round bars, they are not limited thereto and may be shaped like a square column.

【0034】また、溝棒4a〜4dは、丸棒形の例を示
したが、長板に溝を設けるものとしてもよい。さらに、
溝を溝棒4a〜4d及びウェハ保持柱9a〜9dの一部
分にのみ設けるものとしたが、リング状に周回させても
よい。このようにすれば、方向性を考慮する必要が無い
ので、突起5bを設ける必要が無くなる。
Further, although the grooved rods 4a to 4d are shown as round rods, they may be formed by providing grooves on long plates. moreover,
Although the grooves are provided only in part of the groove rods 4a to 4d and the wafer holding columns 9a to 9d, they may be made to circulate in a ring shape. If this is done, there is no need to consider directionality, so there is no need to provide the protrusion 5b.

【0035】[0035]

【発明の効果】本願において開示される発明のうち、代
表的なものによって得られる効果を簡単に説明すれば、
下記の通りである。
[Effects of the Invention] Among the inventions disclosed in this application, the effects obtained by the typical inventions are briefly explained as follows.
It is as follows.

【0036】すなわち、縦型でかつ下方開放型の熱処理
装置に用いられるボートであって、天板及び下板を複数
の連結部材で連結して一体化すると共に各々に同一材料
を用いたボート本体と、ウェハを支持するための溝を有
して前記天板及び前記下板間に着脱自在に取り付けられ
ると共に物理的特性がウェハに等しいウェハ保持部材と
を設けるようにしたので、熱伝導率の差に起因してウェ
ハに生じていた熱応力転位を低減することができるほか
、変形や破損を低減でき、部品の交換が容易なために、
そのメンテナンスも極めて容易である。
That is, the boat is a boat used in a vertical and downwardly open type heat treatment apparatus, and the boat body has a top plate and a bottom plate connected and integrated by a plurality of connecting members, and each of which is made of the same material. and a wafer holding member which has a groove for supporting the wafer, is detachably attached between the top plate and the bottom plate, and has the same physical properties as the wafer, so that the thermal conductivity can be improved. In addition to reducing thermal stress dislocations that occur in wafers due to differences, it also reduces deformation and damage, and makes it easy to replace parts.
Its maintenance is also extremely easy.

【0037】また、縦型でかつ下方開放型の熱処理装置
に用いられるボートであって、同一材料による天板及び
下板と、これらと同一の材料を用いて加工され、前記下
板及び前記天板を連結すると共にその長手方向に連続的
に溝が形成された複数の連結部材と、該ウェハ保持部の
溝に支持されると共に、ウェハが載置される円板状の保
持部材とを設けたことにより、ウェハを全面で支持する
ことができ、ウェハに局所的に荷重が印加されるのを防
止でき、結晶欠陥の発生などの防止が可能になる。
[0037] Further, the boat is used in a vertical and downwardly open type heat treatment apparatus, and has a top plate and a bottom plate made of the same material, and is processed using the same material, and has a top plate and a bottom plate made of the same material. A plurality of connecting members connecting the plates and having grooves continuously formed in the longitudinal direction thereof, and a disk-shaped holding member supported by the grooves of the wafer holding part and on which the wafer is placed are provided. As a result, the wafer can be supported over the entire surface, and local loads can be prevented from being applied to the wafer, thereby making it possible to prevent the occurrence of crystal defects.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明による熱処理装置用ボートの一実施例を
示す斜視図である。
FIG. 1 is a perspective view showing an embodiment of a boat for a heat treatment apparatus according to the present invention.

【図2】本発明に係る溝棒の実装状態を示す断面図であ
る。
FIG. 2 is a sectional view showing a mounting state of the grooved bar according to the present invention.

【図3】溝棒の詳細構成を示す斜視図である。FIG. 3 is a perspective view showing the detailed configuration of the groove rod.

【図4】溝棒の取付状態を示す断面図である。FIG. 4 is a sectional view showing how the groove rod is attached.

【図5】本発明による熱処理装置用ボートの他の実施例
を示す平面図である。
FIG. 5 is a plan view showing another embodiment of the boat for heat treatment equipment according to the present invention.

【図6】図5の実施例の正面図である。FIG. 6 is a front view of the embodiment of FIG. 5;

【図7】図6おけるボート本体の詳細を示す斜視図であ
る。
7 is a perspective view showing details of the boat body in FIG. 6. FIG.

【図8】図6に示す保持部材の詳細を示す斜視図である
8 is a perspective view showing details of the holding member shown in FIG. 6. FIG.

【符号の説明】[Explanation of symbols]

1  天板 2  下板 3a,3b,3c  丸棒(連結部材)4a,4b,4
c,4d  溝棒(ウェハ保持部材)5a  溝 5b  突起 6  座ぐり穴 7  貫通孔 8  保持部材 9a,9b,9c,9d  ウェハ保持柱(連結部材)
10  天板 11  下板 12  ウェハ 13  開口部
1 Top plate 2 Lower plate 3a, 3b, 3c Round bar (connecting member) 4a, 4b, 4
c, 4d Groove rod (wafer holding member) 5a Groove 5b Protrusion 6 Counterbore hole 7 Through hole 8 Holding member 9a, 9b, 9c, 9d Wafer holding column (connecting member)
10 Top plate 11 Lower plate 12 Wafer 13 Opening

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】  縦型でかつ下方開放型の熱処理装置に
用いられるボートであって、天板及び下板を複数の連結
部材で連結して一体化すると共に、各々に同一材料を用
いたボート本体と、ウェハを支持するための溝を有して
前記天板及び前記下板間に着脱自在に取り付けられると
共に、物理的特性がウェハに等しいウェハ保持部材とを
具備することを特徴とする熱処理装置用ボート。
Claim 1: A boat used in a vertical, downward-opening heat treatment apparatus, in which a top plate and a bottom plate are connected and integrated by a plurality of connecting members, and each boat is made of the same material. A heat treatment method comprising: a main body; and a wafer holding member having a groove for supporting a wafer, detachably attached between the top plate and the bottom plate, and having physical properties equal to those of the wafer. equipment boat.
【請求項2】  前記ウェハ保持部の材料が、ポリシリ
コンであることを特徴とする請求項1記載の熱処理装置
用ボート。
2. The boat for a heat treatment apparatus according to claim 1, wherein the material of the wafer holder is polysilicon.
【請求項3】  縦型でかつ下方開放型の熱処理装置に
用いられるボートであって、同一材料による天板及び下
板と、これらと同一の材料を用いて加工され、前記下板
及び前記天板を連結すると共にその長手方向に連続的に
溝が形成された複数の連結部材と、該ウェハ保持部の溝
に支持されると共に、ウェハが載置される円板状の保持
部材とを具備することを特徴とする熱処理装置用ボート
3. A boat used in a vertical, downward-opening heat treatment apparatus, comprising a top plate and a bottom plate made of the same material, and a boat processed using the same material, the bottom plate and the top plate made of the same material. It includes a plurality of connecting members that connect the plates and have grooves continuously formed in the longitudinal direction thereof, and a disk-shaped holding member that is supported by the grooves of the wafer holding part and on which the wafer is placed. A boat for heat treatment equipment, characterized by:
【請求項4】  前記保持部材の材料が、ポリシリコン
であることを特徴とする請求項3記載の熱処理装置用ボ
ート。
4. The boat for a heat treatment apparatus according to claim 3, wherein the material of the holding member is polysilicon.
JP3068360A 1991-04-01 1991-04-01 Boat for heat treating device Pending JPH04304652A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3068360A JPH04304652A (en) 1991-04-01 1991-04-01 Boat for heat treating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3068360A JPH04304652A (en) 1991-04-01 1991-04-01 Boat for heat treating device

Publications (1)

Publication Number Publication Date
JPH04304652A true JPH04304652A (en) 1992-10-28

Family

ID=13371553

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3068360A Pending JPH04304652A (en) 1991-04-01 1991-04-01 Boat for heat treating device

Country Status (1)

Country Link
JP (1) JPH04304652A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5370142A (en) * 1992-11-10 1994-12-06 Tokyo Electron Limited Substrate washing device
WO1996028843A1 (en) * 1995-03-13 1996-09-19 Tokyo Electron Limited Heat-treating apparatus
US6059891A (en) * 1997-07-23 2000-05-09 Tokyo Electron Limited Apparatus and method for washing substrate
US6115867A (en) * 1997-08-18 2000-09-12 Tokyo Electron Limited Apparatus for cleaning both sides of substrate
US6431184B1 (en) 1997-08-05 2002-08-13 Tokyo Electron Limited Apparatus and method for washing substrate
JP2003521109A (en) * 1999-10-05 2003-07-08 ジーコ・プロドゥクツィオーンス−ウント・ハンデルスゲゼルシャフト・エム・ベー・ハー Semiconductor wafer holding device
CN110880466A (en) * 2018-09-06 2020-03-13 商先创国际股份有限公司 Wafer boat
CN112652532A (en) * 2020-12-22 2021-04-13 长江存储科技有限责任公司 Method for forming semiconductor structure

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5370142A (en) * 1992-11-10 1994-12-06 Tokyo Electron Limited Substrate washing device
WO1996028843A1 (en) * 1995-03-13 1996-09-19 Tokyo Electron Limited Heat-treating apparatus
US6031205A (en) * 1995-03-13 2000-02-29 Tokyo Electron Limited Thermal treatment apparatus with thermal protection members intercepting thermal radiation at or above a predetermined angle
US6059891A (en) * 1997-07-23 2000-05-09 Tokyo Electron Limited Apparatus and method for washing substrate
US6431184B1 (en) 1997-08-05 2002-08-13 Tokyo Electron Limited Apparatus and method for washing substrate
US6115867A (en) * 1997-08-18 2000-09-12 Tokyo Electron Limited Apparatus for cleaning both sides of substrate
US6276378B1 (en) 1997-08-18 2001-08-21 Tokyo Electron Limited Apparatus for cleaning both sides of substrate
JP2003521109A (en) * 1999-10-05 2003-07-08 ジーコ・プロドゥクツィオーンス−ウント・ハンデルスゲゼルシャフト・エム・ベー・ハー Semiconductor wafer holding device
CN110880466A (en) * 2018-09-06 2020-03-13 商先创国际股份有限公司 Wafer boat
CN112652532A (en) * 2020-12-22 2021-04-13 长江存储科技有限责任公司 Method for forming semiconductor structure

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