JPH01225314A - Core tube - Google Patents

Abstract

PURPOSE:To eliminate an uneven finish of a semiconductor substrate at an inner end part of a core tube by a method wherein a cross section of a cylinder is shut near a gas introduction nozzle of the core tube for semiconductor manufacture use and a flat sheet having two or more holes over the whole surface is installed. CONSTITUTION:An end part on one side of a cylinder 1 composed of a material such as quartz, silicon carbide or the like is shut by using the same material; a gas introduction nozzle 3 is attached in the central part on this shut face 2; a flat sheet, i.e. a gas-flow adjusting sheet 4, which shuts the whole of a cross section of the cylinder and where two or more holes are distributed over the whole surface is installed near an opening of the gas introduction nozzle 3. That is to say, a space surrounded by the shut face 2 at the end of the core tube and by the gas-flow adjusting sheet 4 is filled with a gas which has been introduced into the core tube from the gas introduction nozzle 3, after that, the gas passes through the holes distributed over the surface of the gas-flow adjusting sheet and flows into the cylinder 1 as a laminar flow. A uniform stream of the gas which has become the laminar flow hits a semiconductor substrate which has been arranged near the gas introduction nozzle; the surface of the semiconductor substrate can be treated uniformly; an irregularity in a finished oxide film and in an impurity concentration can be reduced; finally, it is possible to prevent a drop in a yield and the quality.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to semiconductor manufacturing equipment, and particularly to a furnace core tube used in high-temperature heat treatment of semiconductor substrates such as a diffusion furnace equipment.

[Conventional technology]

Conventionally, a furnace core tube for semiconductor manufacturing has a structure in which one end of a cylinder made of a material such as quartz or silicon carbide is closed, and a gas introduction nozzle is attached to the closed surface, and the gas ejected from the gas introduction nozzle is It had a structure in which it flowed directly to the semiconductor substrate side placed inside the cylindrical furnace core tube.

[Problem to be solved by the invention]

When using the above-mentioned conventional furnace core tube, the gas flow inside the furnace core tube does not flow uniformly within the cylindrical cross section in the area near the gas introduction nozzle, and the quality of the semiconductor substrate placed in that area is affected. The process was not uniform, leading to a decline in yield quality. Furthermore, in order to avoid this problem, the semiconductor substrate could not be placed near the gas introduction nozzle, resulting in a reduction in processing capacity.

[Differences between the invention and the prior art]

In contrast to the conventional furnace core tube described above, the present invention provides a flat plate, that is, a gas rectifying plate, which closes the cylindrical cross section and has a plurality of openings uniformly distributed in the plane near the gas introduction nozzle attached to one end of the cylindrical furnace core tube. The difference is that it has a .

[Means to solve the problem]

SUMMARY OF THE INVENTION An object of the present invention is to provide a furnace core tube that eliminates the non-uniformity in the quality of semiconductor substrates that occurs at the inner end of the furnace core tube, that is, there is no deterioration in yield quality or throughput.

A feature of the present invention is that the furnace core tube for semiconductor manufacturing has a structure in which a flat plate that closes the cylindrical cross section is attached near the gas introduction nozzle, and a plurality of openings are distributed over the entire surface of the flat plate.

〔Example〕

Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a sectional view for explaining one embodiment of the present invention.

The single-core tube of this embodiment has a cylinder 1 made of a material such as quartz or silicon carbide, one end of which is closed with the same material, and a gas introduction nozzle 3 is attached to the center of this closed surface 2. It has a structure in which an average or gas rectifying plate 4 is provided near the opening of the gas introduction nozzle 3 that closes the entire cylindrical cross section and has a plurality of openings distributed over the entire surface. That is, the gas introduced into the furnace core tube from the gas introduction nozzle 3 fills the space surrounded by the closed surface 2 at the end of the furnace core tube and the gas rectifier plate 4, and then the gas is distributed within the gas rectifier plate surface. It has a structure in which it passes through the hole and flows into the cylinder 1 as a laminar flow.

〔Effect of the invention〕

If the furnace core tube of this example is applied to oxidation treatment or diffusion treatment, a uniform laminar gas flow will also hit the semiconductor substrate placed near the gas introduction nozzle, resulting in a uniform flow over the surface of the semiconductor substrate. This process can be realized, and variations in the thickness of the finished oxide film and impurity concentration can be reduced, and ultimately a decrease in yield and quality can be prevented. Further, the gas flow becomes uniform over the entire length of the cylindrical furnace core tube, and the processable area becomes longer, so that the processing capacity can be improved.

In the above-described embodiments, the number, diameter, arrangement, etc. of the holes formed in the gas baffle plate can be freely selected, and the gas baffle plate can also be changed to a multi-hole nozzle.

Furthermore, it goes without saying that the same effect can be obtained even if there are a plurality of gas introduction nozzles.

[Brief explanation of the drawing]

FIG. 1 is a sectional view for explaining one embodiment of the present invention. In addition, in the figure, l... cylinder, 2...
Closed surface, 3...Gas introduction nozzle, 4...
・It is a gas rectifier plate. Agent Patent Attorney Uchihara Onshita 1 time

Claims (1)

[Claims] In a furnace core tube for semiconductor manufacturing in which one side opening of a cylinder made of a material such as quartz or silicon carbide is closed with the same material and a gas introduction nozzle is attached to the closed surface, a cylindrical cross section is provided near the gas introduction nozzle. A furnace core tube characterized by having a flat plate for closing and a plurality of openings distributed over the entire surface of the flat plate.