JPS5368171A - Method and apparatus for plasma treatment - Google Patents

Method and apparatus for plasma treatment

Info

Publication number
JPS5368171A
JPS5368171A JP14375276A JP14375276A JPS5368171A JP S5368171 A JPS5368171 A JP S5368171A JP 14375276 A JP14375276 A JP 14375276A JP 14375276 A JP14375276 A JP 14375276A JP S5368171 A JPS5368171 A JP S5368171A
Authority
JP
Japan
Prior art keywords
plasma treatment
ions
treat
substrate
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14375276A
Other languages
Japanese (ja)
Other versions
JPS6318323B2 (en
Inventor
Takashi Tsuchimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14375276A priority Critical patent/JPS5368171A/en
Publication of JPS5368171A publication Critical patent/JPS5368171A/en
Publication of JPS6318323B2 publication Critical patent/JPS6318323B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

Abstract

PURPOSE:To treat the substrate of ground potential with the ions of specified energy by applying desired positive plasmas to one of high frequency electrodes.
JP14375276A 1976-11-30 1976-11-30 Method and apparatus for plasma treatment Granted JPS5368171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14375276A JPS5368171A (en) 1976-11-30 1976-11-30 Method and apparatus for plasma treatment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14375276A JPS5368171A (en) 1976-11-30 1976-11-30 Method and apparatus for plasma treatment

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP15780783A Division JPS5980932A (en) 1983-08-31 1983-08-31 Plasma treating device
JP62292004A Division JPS63190162A (en) 1987-11-20 1987-11-20 Plasma treatment device

Publications (2)

Publication Number Publication Date
JPS5368171A true JPS5368171A (en) 1978-06-17
JPS6318323B2 JPS6318323B2 (en) 1988-04-18

Family

ID=15346185

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14375276A Granted JPS5368171A (en) 1976-11-30 1976-11-30 Method and apparatus for plasma treatment

Country Status (1)

Country Link
JP (1) JPS5368171A (en)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376758A (en) * 1976-12-20 1978-07-07 Nippon Telegr & Teleph Corp <Ntt> Plasma etching method
JPS55118637A (en) * 1979-03-06 1980-09-11 Chiyou Lsi Gijutsu Kenkyu Kumiai Plasma etching apparatus
JPS5664437A (en) * 1979-08-22 1981-06-01 Onera (Off Nat Aerospatiale) Method and device for chemically etching integrated circuit by dry process
JPS5694745A (en) * 1979-12-28 1981-07-31 Sony Corp Plasma treatment device
JPS56100423A (en) * 1979-12-26 1981-08-12 Western Electric Co Method and device for imporving characteristics of gas plasma reaction
JPS56130465A (en) * 1980-03-14 1981-10-13 Canon Inc Film forming method
JPS5750435A (en) * 1980-09-11 1982-03-24 Toshiba Corp Plasma etching device
US4352725A (en) * 1979-12-15 1982-10-05 Anelva Corporation Dry etching device comprising an electrode for controlling etch rate
JPS57210631A (en) * 1981-06-19 1982-12-24 Toshiba Corp Reactive type ion etching method
JPS58122736A (en) * 1982-01-14 1983-07-21 Nippon Telegr & Teleph Corp <Ntt> Formation of insulating film
JPS5934639A (en) * 1982-08-21 1984-02-25 Mitsubishi Electric Corp Forming device for silicon nitride film
JPS59192833U (en) * 1983-06-08 1984-12-21 日本電子株式会社 Optical CVD equipment
JPS6077413A (en) * 1983-10-04 1985-05-02 Ulvac Corp Laser excitation process apparatus
JPS6091646A (en) * 1983-10-25 1985-05-23 Nec Corp Plasma vapor growth
JPS60239015A (en) * 1984-05-11 1985-11-27 Toyobo Co Ltd Formation of amorphous silicon film
JPS63288021A (en) * 1986-10-17 1988-11-25 Hitachi Ltd Method and device for plasma processing
JPH01180970A (en) * 1988-01-13 1989-07-18 Tadahiro Omi Vacuum surface treatment device
US5160398A (en) * 1989-11-17 1992-11-03 Sony Corporation Etching method and apparatus
JPH0785997A (en) * 1993-09-20 1995-03-31 Ii C Kagaku Kk Atmospheric pressure glow discharge plasma processing method
JPH09208726A (en) * 1996-02-02 1997-08-12 Sekisui Chem Co Ltd Surface treatment of substrate utilizing plasma

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538053B2 (en) * 1976-12-20 1980-10-02
JPS5376758A (en) * 1976-12-20 1978-07-07 Nippon Telegr & Teleph Corp <Ntt> Plasma etching method
JPS55118637A (en) * 1979-03-06 1980-09-11 Chiyou Lsi Gijutsu Kenkyu Kumiai Plasma etching apparatus
JPS5664437A (en) * 1979-08-22 1981-06-01 Onera (Off Nat Aerospatiale) Method and device for chemically etching integrated circuit by dry process
JPH0313741B2 (en) * 1979-08-22 1991-02-25 Onera (Off Nat Aerospatiale)
US4352725A (en) * 1979-12-15 1982-10-05 Anelva Corporation Dry etching device comprising an electrode for controlling etch rate
JPS56100423A (en) * 1979-12-26 1981-08-12 Western Electric Co Method and device for imporving characteristics of gas plasma reaction
JPS5694745A (en) * 1979-12-28 1981-07-31 Sony Corp Plasma treatment device
JPS56130465A (en) * 1980-03-14 1981-10-13 Canon Inc Film forming method
JPS6315348B2 (en) * 1980-03-14 1988-04-04 Canon Kk
JPS5750435A (en) * 1980-09-11 1982-03-24 Toshiba Corp Plasma etching device
JPH0136247B2 (en) * 1980-09-11 1989-07-31 Toshiba Kk
JPS57210631A (en) * 1981-06-19 1982-12-24 Toshiba Corp Reactive type ion etching method
JPS58122736A (en) * 1982-01-14 1983-07-21 Nippon Telegr & Teleph Corp <Ntt> Formation of insulating film
JPS5934639A (en) * 1982-08-21 1984-02-25 Mitsubishi Electric Corp Forming device for silicon nitride film
JPS59192833U (en) * 1983-06-08 1984-12-21 日本電子株式会社 Optical CVD equipment
JPS6077413A (en) * 1983-10-04 1985-05-02 Ulvac Corp Laser excitation process apparatus
JPS6091646A (en) * 1983-10-25 1985-05-23 Nec Corp Plasma vapor growth
JPS60239015A (en) * 1984-05-11 1985-11-27 Toyobo Co Ltd Formation of amorphous silicon film
JPS63288021A (en) * 1986-10-17 1988-11-25 Hitachi Ltd Method and device for plasma processing
JPH01180970A (en) * 1988-01-13 1989-07-18 Tadahiro Omi Vacuum surface treatment device
US5160398A (en) * 1989-11-17 1992-11-03 Sony Corporation Etching method and apparatus
US5314575A (en) * 1989-11-17 1994-05-24 Sony Corporation Etching method and apparatus
JPH0785997A (en) * 1993-09-20 1995-03-31 Ii C Kagaku Kk Atmospheric pressure glow discharge plasma processing method
JPH09208726A (en) * 1996-02-02 1997-08-12 Sekisui Chem Co Ltd Surface treatment of substrate utilizing plasma

Also Published As

Publication number Publication date
JPS6318323B2 (en) 1988-04-18

Similar Documents

Publication Publication Date Title
JPS5368171A (en) Method and apparatus for plasma treatment
ES8303542A1 (en) Gasless ion plating process and apparatus
JPS5531154A (en) Plasma etching apparatus
GB1550853A (en) Apparatus and process for plasma treatment
JPS5747876A (en) Plasma etching apparatus and method
NZ179772A (en) Method and apparatus for treating seeds with microwave energy
IE37869L (en) Electric device for treating fluid
JPS5645761A (en) Plasma reaction apparatus
JPS53143170A (en) Condenser type gas plasma treating apparatus
JPS526441A (en) Manufacturing method of parallelelectric field excitation piezo-electr ic filters
JPS5685827A (en) Plasma etching treating method and treatment device
JPS546874A (en) Thin film forming apparatus
JPS544571A (en) Plasma treating apparatus
JPS5385782A (en) Treating apparatus with activated gas
JPS5214374A (en) Treatment equpment for ion beam
JPS5635775A (en) Ion beam etching method
JPS51150093A (en) Gas insulating bushing
JPS53132396A (en) Solid ion source
JPS53122636A (en) Corrosion-resisting steel plate and method of surface treatment thereof
JPS57154833A (en) Etching method by reactive ion
JPS5360560A (en) Injection method of ion to treated substance surface
JPS5492534A (en) Plasma treating device
JPS5591980A (en) Plasma treating apparatus
JPS5438756A (en) Method and apparatus for spot knocking of cathode-ray tube
JPS5222991A (en) Method of controlling plasma type ion source