JPS5750435A - Plasma etching device - Google Patents

Plasma etching device

Info

Publication number
JPS5750435A
JPS5750435A JP12633380A JP12633380A JPS5750435A JP S5750435 A JPS5750435 A JP S5750435A JP 12633380 A JP12633380 A JP 12633380A JP 12633380 A JP12633380 A JP 12633380A JP S5750435 A JPS5750435 A JP S5750435A
Authority
JP
Japan
Prior art keywords
electrode
etching
grounding
bias voltage
vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12633380A
Other languages
Japanese (ja)
Other versions
JPH0136247B2 (en
Inventor
Takashi Yamazaki
Tetsuo Kurisaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Tokuda Seisakusho Co Ltd
Original Assignee
Toshiba Corp
Tokuda Seisakusho Co Ltd
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokuda Seisakusho Co Ltd, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP12633380A priority Critical patent/JPS5750435A/en
Publication of JPS5750435A publication Critical patent/JPS5750435A/en
Publication of JPH0136247B2 publication Critical patent/JPH0136247B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To optimize self-bias voltage at the time of etching by mounting a connecting mechanism varying a high frequency-like connection condition between an electrode at the grounding side between a pair of parallel plate electrodes constituting the plasma etching device and a vessel. CONSTITUTION:An etching chamber is composed of the torus-shaped vessel 11 formed by stainless, the discoid parallel plate electrodes 12, 13 and insulating rings 15. The connecting members 16 shaped by bending a metallic plate in a corrugated shape are inserted between an outer circumferential section of the grounding electrode 12 between the parallel plate electrodes and an inner circumferential section of the vessel 11. The grounding condition of the electrode 12 can be changed by the form and number of the connecting members 16. When a gas consisting of a halogen element is introduced into the etching chamber and a material is etched by plasma, etching characteristics depend upon the self-bias voltage, but aimed etching characteristics can be selected by properly setting the grounding condition of the electrode 12 because the self-bias voltage depends on the grounding condition of the electrode 12.
JP12633380A 1980-09-11 1980-09-11 Plasma etching device Granted JPS5750435A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12633380A JPS5750435A (en) 1980-09-11 1980-09-11 Plasma etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12633380A JPS5750435A (en) 1980-09-11 1980-09-11 Plasma etching device

Publications (2)

Publication Number Publication Date
JPS5750435A true JPS5750435A (en) 1982-03-24
JPH0136247B2 JPH0136247B2 (en) 1989-07-31

Family

ID=14932579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12633380A Granted JPS5750435A (en) 1980-09-11 1980-09-11 Plasma etching device

Country Status (1)

Country Link
JP (1) JPS5750435A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6214429A (en) * 1985-07-12 1987-01-23 Hitachi Ltd Bias impression etching and device thereof
JPH01170387A (en) * 1987-12-22 1989-07-05 Yaskawa Electric Mfg Co Ltd Synchronous operation system for motor
US4897171A (en) * 1985-11-26 1990-01-30 Tadahiro Ohmi Wafer susceptor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368171A (en) * 1976-11-30 1978-06-17 Hitachi Ltd Method and apparatus for plasma treatment
JPS53114679A (en) * 1977-03-17 1978-10-06 Fujitsu Ltd Plasm etching unit
JPS5440079A (en) * 1977-09-05 1979-03-28 Fujitsu Ltd Plasma etching method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5368171A (en) * 1976-11-30 1978-06-17 Hitachi Ltd Method and apparatus for plasma treatment
JPS53114679A (en) * 1977-03-17 1978-10-06 Fujitsu Ltd Plasm etching unit
JPS5440079A (en) * 1977-09-05 1979-03-28 Fujitsu Ltd Plasma etching method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6214429A (en) * 1985-07-12 1987-01-23 Hitachi Ltd Bias impression etching and device thereof
US4897171A (en) * 1985-11-26 1990-01-30 Tadahiro Ohmi Wafer susceptor
JPH01170387A (en) * 1987-12-22 1989-07-05 Yaskawa Electric Mfg Co Ltd Synchronous operation system for motor

Also Published As

Publication number Publication date
JPH0136247B2 (en) 1989-07-31

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