JPS5750435A - Plasma etching device - Google Patents
Plasma etching deviceInfo
- Publication number
- JPS5750435A JPS5750435A JP12633380A JP12633380A JPS5750435A JP S5750435 A JPS5750435 A JP S5750435A JP 12633380 A JP12633380 A JP 12633380A JP 12633380 A JP12633380 A JP 12633380A JP S5750435 A JPS5750435 A JP S5750435A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- etching
- grounding
- bias voltage
- vessel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To optimize self-bias voltage at the time of etching by mounting a connecting mechanism varying a high frequency-like connection condition between an electrode at the grounding side between a pair of parallel plate electrodes constituting the plasma etching device and a vessel. CONSTITUTION:An etching chamber is composed of the torus-shaped vessel 11 formed by stainless, the discoid parallel plate electrodes 12, 13 and insulating rings 15. The connecting members 16 shaped by bending a metallic plate in a corrugated shape are inserted between an outer circumferential section of the grounding electrode 12 between the parallel plate electrodes and an inner circumferential section of the vessel 11. The grounding condition of the electrode 12 can be changed by the form and number of the connecting members 16. When a gas consisting of a halogen element is introduced into the etching chamber and a material is etched by plasma, etching characteristics depend upon the self-bias voltage, but aimed etching characteristics can be selected by properly setting the grounding condition of the electrode 12 because the self-bias voltage depends on the grounding condition of the electrode 12.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12633380A JPS5750435A (en) | 1980-09-11 | 1980-09-11 | Plasma etching device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12633380A JPS5750435A (en) | 1980-09-11 | 1980-09-11 | Plasma etching device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5750435A true JPS5750435A (en) | 1982-03-24 |
JPH0136247B2 JPH0136247B2 (en) | 1989-07-31 |
Family
ID=14932579
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12633380A Granted JPS5750435A (en) | 1980-09-11 | 1980-09-11 | Plasma etching device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5750435A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6214429A (en) * | 1985-07-12 | 1987-01-23 | Hitachi Ltd | Bias impression etching and device thereof |
JPH01170387A (en) * | 1987-12-22 | 1989-07-05 | Yaskawa Electric Mfg Co Ltd | Synchronous operation system for motor |
US4897171A (en) * | 1985-11-26 | 1990-01-30 | Tadahiro Ohmi | Wafer susceptor |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5368171A (en) * | 1976-11-30 | 1978-06-17 | Hitachi Ltd | Method and apparatus for plasma treatment |
JPS53114679A (en) * | 1977-03-17 | 1978-10-06 | Fujitsu Ltd | Plasm etching unit |
JPS5440079A (en) * | 1977-09-05 | 1979-03-28 | Fujitsu Ltd | Plasma etching method |
-
1980
- 1980-09-11 JP JP12633380A patent/JPS5750435A/en active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5368171A (en) * | 1976-11-30 | 1978-06-17 | Hitachi Ltd | Method and apparatus for plasma treatment |
JPS53114679A (en) * | 1977-03-17 | 1978-10-06 | Fujitsu Ltd | Plasm etching unit |
JPS5440079A (en) * | 1977-09-05 | 1979-03-28 | Fujitsu Ltd | Plasma etching method |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6214429A (en) * | 1985-07-12 | 1987-01-23 | Hitachi Ltd | Bias impression etching and device thereof |
US4897171A (en) * | 1985-11-26 | 1990-01-30 | Tadahiro Ohmi | Wafer susceptor |
JPH01170387A (en) * | 1987-12-22 | 1989-07-05 | Yaskawa Electric Mfg Co Ltd | Synchronous operation system for motor |
Also Published As
Publication number | Publication date |
---|---|
JPH0136247B2 (en) | 1989-07-31 |
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