JPS55118637A - Plasma etching apparatus - Google Patents

Plasma etching apparatus

Info

Publication number
JPS55118637A
JPS55118637A JP2635279A JP2635279A JPS55118637A JP S55118637 A JPS55118637 A JP S55118637A JP 2635279 A JP2635279 A JP 2635279A JP 2635279 A JP2635279 A JP 2635279A JP S55118637 A JPS55118637 A JP S55118637A
Authority
JP
Japan
Prior art keywords
high frequency
electrode
plasma
gas
frequency power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2635279A
Other languages
Japanese (ja)
Inventor
Hideaki Itakura
Hiroyoshi Komiya
Hiroyasu Toyoda
Mineto Tobinaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP2635279A priority Critical patent/JPS55118637A/en
Publication of JPS55118637A publication Critical patent/JPS55118637A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02019—Chemical etching

Abstract

PURPOSE:To enable etching of preferable reproducibility in a parallel flat plasma etching apparatus by providing means for detecting self-bias voltage generated at a high frequency electrode by gas plasma to control plasma state in the apparatus. CONSTITUTION:A silicon wafer 22 as an article to be etched is placed on a high frequency electrode 21, CHF3 gas is introduced from a gas inlet 3, and high frequency power is applied to the electrode 21 through a matching circuit 15 from a high frequency power supply 14 while maintaining the pressure at approx. 0.05 Torr. to generate gas plasma. Since the selfbias voltage corresponding to the intensity of the gas plasma 23 is induced at the electrode 21 at this time, it is detected by a bias voltage detection indicator 24 to automatically control high frequency power by using a comparator 26 or the like so that the voltage may become constant. Thus, the etching speed can be obtained with preferable reproducibility.
JP2635279A 1979-03-06 1979-03-06 Plasma etching apparatus Pending JPS55118637A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2635279A JPS55118637A (en) 1979-03-06 1979-03-06 Plasma etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2635279A JPS55118637A (en) 1979-03-06 1979-03-06 Plasma etching apparatus

Publications (1)

Publication Number Publication Date
JPS55118637A true JPS55118637A (en) 1980-09-11

Family

ID=12191065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2635279A Pending JPS55118637A (en) 1979-03-06 1979-03-06 Plasma etching apparatus

Country Status (1)

Country Link
JP (1) JPS55118637A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58158929A (en) * 1982-03-17 1983-09-21 Kokusai Electric Co Ltd Plasma generator
JPS60126832A (en) * 1983-12-14 1985-07-06 Hitachi Ltd Dry etching method and device thereof
JPS6147642A (en) * 1984-08-14 1986-03-08 Teru Saamuko Kk Plasma generating apparatus
JPS61256637A (en) * 1985-05-06 1986-11-14 インターナショナル・ビジネス・マシーンズ・コーポレーション Monitoring of plasma etching process
JPS62165922A (en) * 1986-01-17 1987-07-22 Toshiba Corp High-frequency etching device
JPS6387826U (en) * 1986-11-26 1988-06-08

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52127770A (en) * 1976-04-19 1977-10-26 Fujitsu Ltd Spatter etching method
JPS5368171A (en) * 1976-11-30 1978-06-17 Hitachi Ltd Method and apparatus for plasma treatment
JPS53114679A (en) * 1977-03-17 1978-10-06 Fujitsu Ltd Plasm etching unit
JPS5440079A (en) * 1977-09-05 1979-03-28 Fujitsu Ltd Plasma etching method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52127770A (en) * 1976-04-19 1977-10-26 Fujitsu Ltd Spatter etching method
JPS5368171A (en) * 1976-11-30 1978-06-17 Hitachi Ltd Method and apparatus for plasma treatment
JPS53114679A (en) * 1977-03-17 1978-10-06 Fujitsu Ltd Plasm etching unit
JPS5440079A (en) * 1977-09-05 1979-03-28 Fujitsu Ltd Plasma etching method

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58158929A (en) * 1982-03-17 1983-09-21 Kokusai Electric Co Ltd Plasma generator
JPH0119261B2 (en) * 1982-03-17 1989-04-11 Kokusai Denki Kk
JPS60126832A (en) * 1983-12-14 1985-07-06 Hitachi Ltd Dry etching method and device thereof
JPH0527244B2 (en) * 1983-12-14 1993-04-20 Hitachi Ltd
JPS6147642A (en) * 1984-08-14 1986-03-08 Teru Saamuko Kk Plasma generating apparatus
JPS61256637A (en) * 1985-05-06 1986-11-14 インターナショナル・ビジネス・マシーンズ・コーポレーション Monitoring of plasma etching process
JPH0528895B2 (en) * 1985-05-06 1993-04-27 Intaanashonaru Bijinesu Mashiinzu Corp
JPS62165922A (en) * 1986-01-17 1987-07-22 Toshiba Corp High-frequency etching device
JPS6387826U (en) * 1986-11-26 1988-06-08
JPH0513007Y2 (en) * 1986-11-26 1993-04-06

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