JPS6387826U - - Google Patents

Info

Publication number
JPS6387826U
JPS6387826U JP18236786U JP18236786U JPS6387826U JP S6387826 U JPS6387826 U JP S6387826U JP 18236786 U JP18236786 U JP 18236786U JP 18236786 U JP18236786 U JP 18236786U JP S6387826 U JPS6387826 U JP S6387826U
Authority
JP
Japan
Prior art keywords
electrodes
power
sample
self
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18236786U
Other languages
Japanese (ja)
Other versions
JPH0513007Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1986182367U priority Critical patent/JPH0513007Y2/ja
Publication of JPS6387826U publication Critical patent/JPS6387826U/ja
Application granted granted Critical
Publication of JPH0513007Y2 publication Critical patent/JPH0513007Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案の一実施例を示す概略図、第２
図はコントローラの機能を示すブロツク図、第３
図は同実施例の動作を示すフローチヤートである
。 ２……反応室、８―１〜８―５……試料、１０
―１〜１０―５……電極、１２―１〜１２―５…
…高周波発振器、１４―１〜１４―５……直流電
圧測定器、１６……コントローラ。 Fig. 1 is a schematic diagram showing an embodiment of the present invention;
The figure is a block diagram showing the functions of the controller.
The figure is a flowchart showing the operation of the same embodiment. 2...Reaction chamber, 8-1 to 8-5...Sample, 10
-1 to 10-5...electrode, 12-1 to 12-5...
...High frequency oscillator, 14-1 to 14-5... DC voltage measuring device, 16... Controller.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] チヤンバ内の複数個の電極上にそれぞれ試料を
設置し、前記チヤンバ内にガスを導入し、前記各
電極に交流電力を印加して前記試料をエツチング
する装置において、前記各電極に個別に交流電力
印加手段を設けるとともに、前記各電極に個別に
自己バイアス測定器を設け、前記全自己バイアス
測定器の出力が均一になるように前記各交流電力
印加手段の出力を調整するコントローラを設けた
ことを特徴とするエツチング装置。 In an apparatus in which a sample is placed on each of a plurality of electrodes in a chamber, a gas is introduced into the chamber, and AC power is applied to each of the electrodes to etch the sample, the AC power is individually applied to each of the electrodes. In addition to providing an applying means, a self-bias measuring device is provided for each of the electrodes individually, and a controller is provided for adjusting the output of each of the alternating current power applying means so that the outputs of all the self-bias measuring devices are uniform. Characteristic etching equipment.
JP1986182367U 1986-11-26 1986-11-26 Expired - Lifetime JPH0513007Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1986182367U JPH0513007Y2 (en) 1986-11-26 1986-11-26

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1986182367U JPH0513007Y2 (en) 1986-11-26 1986-11-26

Publications (2)

Publication Number Publication Date
JPS6387826U true JPS6387826U (en) 1988-06-08
JPH0513007Y2 JPH0513007Y2 (en) 1993-04-06

Family

ID=31128100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1986182367U Expired - Lifetime JPH0513007Y2 (en) 1986-11-26 1986-11-26

Country Status (1)

Country Link
JP (1) JPH0513007Y2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077035A (en) * 1999-09-07 2001-03-23 Nec Kyushu Ltd Device and method for manufacturing semiconductor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55118637A (en) * 1979-03-06 1980-09-11 Chiyou Lsi Gijutsu Kenkyu Kumiai Plasma etching apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55118637A (en) * 1979-03-06 1980-09-11 Chiyou Lsi Gijutsu Kenkyu Kumiai Plasma etching apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077035A (en) * 1999-09-07 2001-03-23 Nec Kyushu Ltd Device and method for manufacturing semiconductor

Also Published As

Publication number Publication date
JPH0513007Y2 (en) 1993-04-06

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