JPS6240829U - - Google Patents

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Publication number
JPS6240829U
JPS6240829U JP13089185U JP13089185U JPS6240829U JP S6240829 U JPS6240829 U JP S6240829U JP 13089185 U JP13089185 U JP 13089185U JP 13089185 U JP13089185 U JP 13089185U JP S6240829 U JPS6240829 U JP S6240829U
Authority
JP
Japan
Prior art keywords
electrode
sample
intermediate electrode
high frequency
frequency power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13089185U
Other languages
Japanese (ja)
Other versions
JPH051072Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985130891U priority Critical patent/JPH051072Y2/ja
Publication of JPS6240829U publication Critical patent/JPS6240829U/ja
Application granted granted Critical
Publication of JPH051072Y2 publication Critical patent/JPH051072Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案に係るプラズマ処理装置の第１
実施例の断面図、第２図は第２実施例の断面図、
第３図は第３実施例の断面図、第４図は従来装置
の断面図である。 １…反応容器、２…上部電極、３…下部電極、
５…試料、８…中間電極、１１…プラズマ励起室
、１２…ガス通過孔。 Figure 1 shows the first part of the plasma processing apparatus according to the present invention.
A sectional view of the embodiment, FIG. 2 is a sectional view of the second embodiment,
FIG. 3 is a sectional view of the third embodiment, and FIG. 4 is a sectional view of the conventional device. 1... Reaction container, 2... Upper electrode, 3... Lower electrode,
5... Sample, 8... Intermediate electrode, 11... Plasma excitation chamber, 12... Gas passage hole.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 反応容器１内に上下部電極２，３を対向させて
設置し、上下部電極２，３のいずれか一方で試料
５を支持し、他方の電極は反応ガスを導入しプラ
ズマ励起室１１を形成する筐体の中間電極８で包
囲し、この中間電極８は他方の電極と共に反応容
器１に対して昇降自在に設け、中間電極８の試料
５側に多数のガス通過孔１２，１２，……を設け
、この中間電極８と他方の電極との間は高周波電
力を印加する回路を、中間電極８と試料側電極に
はバイアス電圧又は高周波電力を印加する回路を
設けたことを特徴とするプラズマ処理装置。 Upper and lower electrodes 2 and 3 are placed facing each other in a reaction vessel 1, and one of the upper and lower electrodes 2 and 3 supports a sample 5, and the other electrode introduces a reaction gas to form a plasma excitation chamber 11. This intermediate electrode 8 is provided so as to be movable up and down with respect to the reaction vessel 1 together with the other electrode, and a large number of gas passage holes 12, 12, . . . are provided on the sample 5 side of the intermediate electrode 8. A plasma characterized in that a circuit for applying high frequency power is provided between the intermediate electrode 8 and the other electrode, and a circuit for applying a bias voltage or high frequency power is provided between the intermediate electrode 8 and the sample side electrode. Processing equipment.
JP1985130891U 1985-08-29 1985-08-29 Expired - Lifetime JPH051072Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1985130891U JPH051072Y2 (en) 1985-08-29 1985-08-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985130891U JPH051072Y2 (en) 1985-08-29 1985-08-29

Publications (2)

Publication Number Publication Date
JPS6240829U true JPS6240829U (en) 1987-03-11
JPH051072Y2 JPH051072Y2 (en) 1993-01-12

Family

ID=31028826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985130891U Expired - Lifetime JPH051072Y2 (en) 1985-08-29 1985-08-29

Country Status (1)

Country Link
JP (1) JPH051072Y2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62130513A (en) * 1985-12-02 1987-06-12 Hitachi Ltd Method for forming thin film and manufacturing apparatus therefor
JPH01214123A (en) * 1988-02-23 1989-08-28 Tel Sagami Ltd Plasma processing device
JPH01287285A (en) * 1988-05-13 1989-11-17 Matsushita Electric Ind Co Ltd Dry etching device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58124223A (en) * 1982-01-20 1983-07-23 Hitachi Ltd Plasma treating device
JPS5943880A (en) * 1982-09-03 1984-03-12 Matsushita Electric Ind Co Ltd Dry etching device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58124223A (en) * 1982-01-20 1983-07-23 Hitachi Ltd Plasma treating device
JPS5943880A (en) * 1982-09-03 1984-03-12 Matsushita Electric Ind Co Ltd Dry etching device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62130513A (en) * 1985-12-02 1987-06-12 Hitachi Ltd Method for forming thin film and manufacturing apparatus therefor
JPH01214123A (en) * 1988-02-23 1989-08-28 Tel Sagami Ltd Plasma processing device
JPH01287285A (en) * 1988-05-13 1989-11-17 Matsushita Electric Ind Co Ltd Dry etching device

Also Published As

Publication number Publication date
JPH051072Y2 (en) 1993-01-12

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