JPH0313733U - - Google Patents
Info
- Publication number
- JPH0313733U JPH0313733U JP7543789U JP7543789U JPH0313733U JP H0313733 U JPH0313733 U JP H0313733U JP 7543789 U JP7543789 U JP 7543789U JP 7543789 U JP7543789 U JP 7543789U JP H0313733 U JPH0313733 U JP H0313733U
- Authority
- JP
- Japan
- Prior art keywords
- lower electrode
- etched
- reaction chamber
- excites
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims 1
- 238000001312 dry etching Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 238000009434 installation Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
第１図は一実施例を示す断面図、第２図は同実
施例における下部電極を示す平面図、第３図は第
２図のＡ−Ａ′線位置での拡大断面図、第４図は
同実施例において用いられる石英部材を表わす斜
視図、第５図は従来のプラズマエツチング装置を
示す断面図である。
２……反応室、４……下部電極板、６……上部
電極、８ａ……ウエハ設置台、１０……被エツチ
ング物、２０……石英リング。
Fig. 1 is a sectional view showing one embodiment, Fig. 2 is a plan view showing a lower electrode in the same embodiment, Fig. 3 is an enlarged sectional view taken along line A-A' in Fig. 2, and Fig. 4. 5 is a perspective view showing a quartz member used in the same embodiment, and FIG. 5 is a sectional view showing a conventional plasma etching apparatus. 2...Reaction chamber, 4...Lower electrode plate, 6...Upper electrode, 8a...Wafer installation stand, 10...Object to be etched, 20...Quartz ring.
Claims (1)
励起して被エツチング物をエツチングするドライ
エツチング装置の反応室内で被エツチング物を保
持する導体製の下部電極において、被エツチング
物が設置される部分の側方周辺を取り囲んで石英
部材を配置したことを特徴とする下部電極。 The side of the part where the object to be etched is installed in the lower electrode made of a conductor that holds the object to be etched in the reaction chamber of a dry etching device that excites a reactive gas to etching the object to be etched. A lower electrode characterized in that a quartz member is arranged surrounding the periphery of the lower electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7543789U JPH0313733U (en) | 1989-06-26 | 1989-06-26 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7543789U JPH0313733U (en) | 1989-06-26 | 1989-06-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0313733U true JPH0313733U (en) | 1991-02-12 |
Family
ID=31616014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7543789U Pending JPH0313733U (en) | 1989-06-26 | 1989-06-26 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0313733U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011072449A (en) * | 2009-09-30 | 2011-04-14 | Shigekichi Asanuma | Drainage dish |
| JP2017092093A (en) * | 2015-11-04 | 2017-05-25 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and substrate holding member |
-
1989
- 1989-06-26 JP JP7543789U patent/JPH0313733U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011072449A (en) * | 2009-09-30 | 2011-04-14 | Shigekichi Asanuma | Drainage dish |
| JP2017092093A (en) * | 2015-11-04 | 2017-05-25 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and substrate holding member |