JPS6245830U - - Google Patents
Info
- Publication number
- JPS6245830U JPS6245830U JP13642285U JP13642285U JPS6245830U JP S6245830 U JPS6245830 U JP S6245830U JP 13642285 U JP13642285 U JP 13642285U JP 13642285 U JP13642285 U JP 13642285U JP S6245830 U JPS6245830 U JP S6245830U
- Authority
- JP
- Japan
- Prior art keywords
- lower electrode
- exhaust port
- opened
- moves
- vacuum chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 2
Landscapes
- Drying Of Semiconductors (AREA)
Description
第１図は本考案の一実施例を示す縦断面図、第
２図は従来のドライエツチング装置の縦断面図で
ある。
６……下部電極、｛１１ａ……内チヤンバ、１
１ｂ……外チヤンバ｝真空チヤンバ、１４……排
気口。
FIG. 1 is a longitudinal sectional view showing an embodiment of the present invention, and FIG. 2 is a longitudinal sectional view of a conventional dry etching apparatus. 6... Lower electrode, {11a... Inner chamber, 1
1b...Outer chamber} Vacuum chamber, 14...Exhaust port.
Claims (1)
導入しつつ、半導体ウエハを載置して上下動する
下部電極に高周波電力を印加し、プラズマ状態を
形成して半導体ウエハ上の被エツチング物をエツ
チングするドライエツチング装置において、真空
チヤンバの前記下部電極に対向する側壁に排気口
を開口し、該排気口を上下動する前記下部電極に
て開閉可能としたことを特徴とするドライエツチ
ング装置。 While evacuating the vacuum chamber and introducing a reactive gas, a semiconductor wafer is placed and high frequency power is applied to the lower electrode that moves up and down to form a plasma state and etch the object to be etched on the semiconductor wafer. A dry etching apparatus characterized in that an exhaust port is opened in a side wall of the vacuum chamber facing the lower electrode, and the exhaust port can be opened and closed by the lower electrode that moves up and down.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13642285U JPS6245830U (en) | 1985-09-06 | 1985-09-06 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13642285U JPS6245830U (en) | 1985-09-06 | 1985-09-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6245830U true JPS6245830U (en) | 1987-03-19 |
Family
ID=31039518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13642285U Pending JPS6245830U (en) | 1985-09-06 | 1985-09-06 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6245830U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015194397A1 (en) * | 2014-06-19 | 2015-12-23 | 東京エレクトロン株式会社 | Plasma processing device |
| JP2017112217A (en) * | 2015-12-16 | 2017-06-22 | 東京エレクトロン株式会社 | Plasma processing device |
-
1985
- 1985-09-06 JP JP13642285U patent/JPS6245830U/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015194397A1 (en) * | 2014-06-19 | 2015-12-23 | 東京エレクトロン株式会社 | Plasma processing device |
| JP2017112217A (en) * | 2015-12-16 | 2017-06-22 | 東京エレクトロン株式会社 | Plasma processing device |
| WO2017104442A1 (en) * | 2015-12-16 | 2017-06-22 | 東京エレクトロン株式会社 | Plasma treatment device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6245830U (en) | ||
| JPS6192052U (en) | ||
| JPS6327035U (en) | ||
| JPS62107439U (en) | ||
| JPH0167738U (en) | ||
| JPS6424828U (en) | ||
| JPH01108930U (en) | ||
| JPS62152436U (en) | ||
| JPS63142824U (en) | ||
| JPS61186234U (en) | ||
| JPS6351436U (en) | ||
| JPH0313733U (en) | ||
| JPH01154630U (en) | ||
| JPS63100827U (en) | ||
| JPS62157138U (en) | ||
| JPS61136537U (en) | ||
| JPS6127334U (en) | dry etching equipment | |
| JPH0250950U (en) | ||
| JPS63157926U (en) | ||
| JPH0171439U (en) | ||
| JPH0252329U (en) | ||
| JPS6130235U (en) | plasma etching equipment | |
| JPH0385466U (en) | ||
| JPH0229150U (en) | ||
| JPH0171438U (en) |