JPH01108930U - - Google Patents
Info
- Publication number
- JPH01108930U JPH01108930U JP318188U JP318188U JPH01108930U JP H01108930 U JPH01108930 U JP H01108930U JP 318188 U JP318188 U JP 318188U JP 318188 U JP318188 U JP 318188U JP H01108930 U JPH01108930 U JP H01108930U
- Authority
- JP
- Japan
- Prior art keywords
- large number
- reaction chamber
- upper electrode
- electrodes
- dry etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 claims 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
第１図は本考案の一実施例を示す断面図、第２
図は第１図に示す上部電極を示す底面図、第３図
は従来例を示す断面図である。
１…半導体基板、２…反応室の外壁、３…上部
電極、４…下部電極、５…反応室、６，６′…排
気ポート、７…ガス導入ポート、８…ガス噴出孔
、９…ガス排出孔、１０，１０′…ゲートバルブ
、１１，１１′…スロツトルバルブ。
Fig. 1 is a sectional view showing one embodiment of the present invention;
This figure is a bottom view showing the upper electrode shown in FIG. 1, and FIG. 3 is a sectional view showing a conventional example. DESCRIPTION OF SYMBOLS 1...Semiconductor substrate, 2...Outer wall of reaction chamber, 3...Upper electrode, 4...Lower electrode, 5...Reaction chamber, 6, 6'...Exhaust port, 7...Gas introduction port, 8...Gas injection hole, 9...Gas Discharge hole, 10, 10'...gate valve, 11, 11'...throttle valve.
Claims (1)
ドライエツチング装置において、上部電極に、多
数のガス導入孔と、多数のガス排気孔とを有する
ことを特徴とするドライエツチング装置。 A plasma dry etching apparatus in which the electrodes of a reaction chamber have a parallel plate structure, characterized in that the upper electrode has a large number of gas introduction holes and a large number of gas exhaust holes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP318188U JPH01108930U (en) | 1988-01-14 | 1988-01-14 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP318188U JPH01108930U (en) | 1988-01-14 | 1988-01-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01108930U true JPH01108930U (en) | 1989-07-24 |
Family
ID=31204586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP318188U Pending JPH01108930U (en) | 1988-01-14 | 1988-01-14 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01108930U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04225797A (en) * | 1990-04-27 | 1992-08-14 | Internatl Business Mach Corp <Ibm> | Convection transmission system and pattern forming device |
| JP2007525021A (en) * | 2003-11-19 | 2007-08-30 | アプライド マテリアルズ インコーポレイテッド | Gas distribution shower head featuring exhaust aperture |
| JP2012209456A (en) * | 2011-03-30 | 2012-10-25 | Toray Ind Inc | Plasma processing apparatus |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6059078A (en) * | 1983-09-12 | 1985-04-05 | Nec Corp | Dry etching apparatus |
-
1988
- 1988-01-14 JP JP318188U patent/JPH01108930U/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6059078A (en) * | 1983-09-12 | 1985-04-05 | Nec Corp | Dry etching apparatus |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04225797A (en) * | 1990-04-27 | 1992-08-14 | Internatl Business Mach Corp <Ibm> | Convection transmission system and pattern forming device |
| JP2007525021A (en) * | 2003-11-19 | 2007-08-30 | アプライド マテリアルズ インコーポレイテッド | Gas distribution shower head featuring exhaust aperture |
| JP2012209456A (en) * | 2011-03-30 | 2012-10-25 | Toray Ind Inc | Plasma processing apparatus |