JPH033733U - - Google Patents

Info

Publication number
JPH033733U
JPH033733U JP6407589U JP6407589U JPH033733U JP H033733 U JPH033733 U JP H033733U JP 6407589 U JP6407589 U JP 6407589U JP 6407589 U JP6407589 U JP 6407589U JP H033733 U JPH033733 U JP H033733U
Authority
JP
Japan
Prior art keywords
gas introduction
ceiling
reaction chamber
reaction gas
reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6407589U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6407589U priority Critical patent/JPH033733U/ja
Publication of JPH033733U publication Critical patent/JPH033733U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本考案の一実施例を示す骨子図、第2
図は該実施例でウエーハを処理した場合の生成膜
膜厚分布図、第3図は従来例を示す骨子図、第4
図は該従来例でウエーハを処理した場合の生成膜
膜厚分布図である。 3……反応室、6,6a,6b……ウエーハ、
9……天井、10……反応ガス導入路、11……
ガス導入口を示す。
Figure 1 is a schematic diagram showing one embodiment of the present invention, Figure 2
The figure is a distribution diagram of the film thickness produced when a wafer is processed in this embodiment, Figure 3 is a schematic diagram showing the conventional example, and Figure 4
The figure is a film thickness distribution diagram of a produced film when a wafer is processed in the conventional example. 3... Reaction chamber, 6, 6a, 6b... Wafer,
9...Ceiling, 10...Reactant gas introduction channel, 11...
Shows gas inlet.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 反応室の側面及び天井面に沿つて、反応ガス導
入路を形成し、反応ガス導入口を反応室の天井に
開口せしめたことを特徴とする縦形拡散装置。
A vertical diffusion device characterized in that a reaction gas introduction path is formed along the side and ceiling surfaces of a reaction chamber, and a reaction gas introduction port is opened at the ceiling of the reaction chamber.
JP6407589U 1989-06-01 1989-06-01 Pending JPH033733U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6407589U JPH033733U (en) 1989-06-01 1989-06-01

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6407589U JPH033733U (en) 1989-06-01 1989-06-01

Publications (1)

Publication Number Publication Date
JPH033733U true JPH033733U (en) 1991-01-16

Family

ID=31594690

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6407589U Pending JPH033733U (en) 1989-06-01 1989-06-01

Country Status (1)

Country Link
JP (1) JPH033733U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005320043A (en) * 2004-05-11 2005-11-17 Wakon Danbooru Kk Corrugated fiberboard beam and paper-made pallet using the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01130523A (en) * 1987-11-17 1989-05-23 Toshiba Ceramics Co Ltd Vertical furnace for heat-treating semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01130523A (en) * 1987-11-17 1989-05-23 Toshiba Ceramics Co Ltd Vertical furnace for heat-treating semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005320043A (en) * 2004-05-11 2005-11-17 Wakon Danbooru Kk Corrugated fiberboard beam and paper-made pallet using the same

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