JPH0374665U - - Google Patents

Info

Publication number
JPH0374665U
JPH0374665U JP13558289U JP13558289U JPH0374665U JP H0374665 U JPH0374665 U JP H0374665U JP 13558289 U JP13558289 U JP 13558289U JP 13558289 U JP13558289 U JP 13558289U JP H0374665 U JPH0374665 U JP H0374665U
Authority
JP
Japan
Prior art keywords
processing apparatus
plasma processing
reaction gas
peripheral wall
predetermined position
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13558289U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP13558289U priority Critical patent/JPH0374665U/ja
Publication of JPH0374665U publication Critical patent/JPH0374665U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の一実施例を示す断面図、第2
図は従来の断面図である。 4は下電極、11はウエーハ、13は真空容器
、20は反応ガス導入ノズル、23は排気口を示
す。
Fig. 1 is a sectional view showing one embodiment of the present invention;
The figure is a conventional sectional view. 4 is a lower electrode, 11 is a wafer, 13 is a vacuum container, 20 is a reaction gas introduction nozzle, and 23 is an exhaust port.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 10−1torr以下の雰囲気で処理を行うプ
ラズマ処理装置に於いて、真空器の上面、下面に
それぞれ上電極、下電極を相対向させて設け、真
空容器周壁の所要位置に反応ガス導入ノズルを設
け、該周壁の所要位置に反応ガス排気口を設けた
ことを特徴とするプラズマ処理装置。
In a plasma processing apparatus that performs processing in an atmosphere of 10-1 torr or less, an upper electrode and a lower electrode are provided facing each other on the upper and lower surfaces of the vacuum chamber, respectively, and a reaction gas introduction nozzle is installed at a predetermined position on the peripheral wall of the vacuum chamber. 1. A plasma processing apparatus, comprising: a plasma processing apparatus, and a reaction gas exhaust port provided at a predetermined position on the peripheral wall.
JP13558289U 1989-11-22 1989-11-22 Pending JPH0374665U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13558289U JPH0374665U (en) 1989-11-22 1989-11-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13558289U JPH0374665U (en) 1989-11-22 1989-11-22

Publications (1)

Publication Number Publication Date
JPH0374665U true JPH0374665U (en) 1991-07-26

Family

ID=31682843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13558289U Pending JPH0374665U (en) 1989-11-22 1989-11-22

Country Status (1)

Country Link
JP (1) JPH0374665U (en)

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