JPS6379637U - - Google Patents
Info
- Publication number
- JPS6379637U JPS6379637U JP17444686U JP17444686U JPS6379637U JP S6379637 U JPS6379637 U JP S6379637U JP 17444686 U JP17444686 U JP 17444686U JP 17444686 U JP17444686 U JP 17444686U JP S6379637 U JPS6379637 U JP S6379637U
- Authority
- JP
- Japan
- Prior art keywords
- mounting surface
- processing
- wafer mounting
- container
- processing container
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 2
- 238000005273 aeration Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
第１図及び第２図は、夫々本考案の実施例を示
すプラズマ処理装置の断面構成図、第３図は、従
来のプラズマ処理装置の構成図である。
尚、図中１は処理容器、２は処理ガス散気ノズ
ル、３は排気口、４，５は電極板、６は電源、Ａ
は放電エリア、ｓはウエハー載置面、ｗは半導体
ウエハーである。
1 and 2 are cross-sectional configuration diagrams of plasma processing apparatuses showing embodiments of the present invention, respectively, and FIG. 3 is a configuration diagram of a conventional plasma processing apparatus. In the figure, 1 is a processing container, 2 is a processing gas aeration nozzle, 3 is an exhaust port, 4 and 5 are electrode plates, 6 is a power source, and A
is a discharge area, s is a wafer mounting surface, and w is a semiconductor wafer.
Claims (1)
を設け、内部の周側部に処理ガス散気ノズルを配
設するとともに天井部に排気口を形成し、該処理
容器外に容器を挾んで対向する電極を設けたもの
であつて上記ウエハ載置面のウエハーをプラズマ
処理する装置において、上記電極は放電エリアを
ウエハー載置面と重ならない位置に設けられたこ
とを特徴とするプラズマ処理装置。 A semiconductor wafer mounting surface is provided at the center of the bottom of the processing container, a processing gas diffusion nozzle is provided on the inner circumferential side, and an exhaust port is formed in the ceiling, and the container is sandwiched between the processing container and the processing container. 1. An apparatus for plasma processing a wafer on the wafer mounting surface, characterized in that the electrode is provided at a position where a discharge area does not overlap with the wafer mounting surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17444686U JPS6379637U (en) | 1986-11-13 | 1986-11-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17444686U JPS6379637U (en) | 1986-11-13 | 1986-11-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6379637U true JPS6379637U (en) | 1988-05-26 |
Family
ID=31112837
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17444686U Pending JPS6379637U (en) | 1986-11-13 | 1986-11-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6379637U (en) |
-
1986
- 1986-11-13 JP JP17444686U patent/JPS6379637U/ja active Pending