JPH01154630U - - Google Patents

Info

Publication number
JPH01154630U
JPH01154630U JP5199388U JP5199388U JPH01154630U JP H01154630 U JPH01154630 U JP H01154630U JP 5199388 U JP5199388 U JP 5199388U JP 5199388 U JP5199388 U JP 5199388U JP H01154630 U JPH01154630 U JP H01154630U
Authority
JP
Japan
Prior art keywords
reaction chamber
dry etching
vacuum
vacuum reaction
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5199388U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5199388U priority Critical patent/JPH01154630U/ja
Publication of JPH01154630U publication Critical patent/JPH01154630U/ja
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案の実施例1を示す断面図、第2
図は本考案の実施例2を示す断面図である。 1……ガス導入管、2a……上部電極、2b…
…下部電極、3……半導体基板、4……排気管、
5……排気口、6……エツチングチヤンバー、7
……圧力コントローラ、8……ロータリーポンプ
Fig. 1 is a sectional view showing the first embodiment of the present invention;
The figure is a sectional view showing a second embodiment of the present invention. 1... Gas introduction pipe, 2a... Upper electrode, 2b...
... lower electrode, 3 ... semiconductor substrate, 4 ... exhaust pipe,
5...Exhaust port, 6...Etching chamber, 7
...Pressure controller, 8...Rotary pump.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 高真空を維持する排気系及び高周波電力を印加
する電極を設けた真空反応室内部に導入管よりガ
スを供給し、プラズマを発生させて複数枚の半導
体基板を一度に処理するドライエツチング装置に
おいて、前記真空反応室内部に複数個の排気口を
有することを特徴とするドライエツチング装置。
In a dry etching device that processes multiple semiconductor substrates at once by supplying gas from an inlet pipe into a vacuum reaction chamber equipped with an exhaust system that maintains a high vacuum and an electrode that applies high frequency power, plasma is generated. A dry etching apparatus comprising a plurality of exhaust ports inside the vacuum reaction chamber.
JP5199388U 1988-04-18 1988-04-18 Pending JPH01154630U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5199388U JPH01154630U (en) 1988-04-18 1988-04-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5199388U JPH01154630U (en) 1988-04-18 1988-04-18

Publications (1)

Publication Number Publication Date
JPH01154630U true JPH01154630U (en) 1989-10-24

Family

ID=31278006

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5199388U Pending JPH01154630U (en) 1988-04-18 1988-04-18

Country Status (1)

Country Link
JP (1) JPH01154630U (en)

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