JPS6437035U - - Google Patents
Info
- Publication number
- JPS6437035U JPS6437035U JP13139887U JP13139887U JPS6437035U JP S6437035 U JPS6437035 U JP S6437035U JP 13139887 U JP13139887 U JP 13139887U JP 13139887 U JP13139887 U JP 13139887U JP S6437035 U JPS6437035 U JP S6437035U
- Authority
- JP
- Japan
- Prior art keywords
- exhaust
- plasma processing
- exhaust port
- gas
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims 4
- 239000012495 reaction gas Substances 0.000 claims 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Description
第1図は本考案の一実施例による装置の断面側
面図、第2図A及び同図Bは第1図のX−X′線
及びY−Y′線に沿つた各断面図、第3図は従来
装置の断面側面図、第4図は第3図の上部電極の
平面図、第5図乃至第7図は被処理体のエツチン
グ前と後を示す各断面図である。
図中、101……ベルジヤ、101a……第1
の排気口、102……上部電極、102a……上
部電極板、102a1……第2の排気口、102
a2……ガス導入口、102b……上部支持軸、
102b1……排気経路部、102b2……ガス
導入経路部、103……下部電極、103a……
下部電極板、103b……下部支持軸、105…
…マニホールド、106……第1の排気量調整器
、107……第2の排気量調整器。
1 is a sectional side view of an apparatus according to an embodiment of the present invention, FIGS. 2A and 2B are sectional views taken along lines X-X' and Y-Y' in FIG. 4 is a plan view of the upper electrode of FIG. 3, and FIGS. 5 to 7 are sectional views showing the object to be processed before and after etching. In the figure, 101... Berjia, 101a... 1st
Exhaust port, 102... Upper electrode, 102a... Upper electrode plate, 102a 1 ... Second exhaust port, 102
a2 ...Gas inlet, 102b...Upper support shaft,
102b 1 ...Exhaust path section, 102b 2 ...Gas introduction path section, 103...Lower electrode, 103a...
Lower electrode plate, 103b... Lower support shaft, 105...
...manifold, 106...first displacement regulator, 107...second displacement regulator.
Claims (1)
ス導入口と、該ガス導入口に対向配置され、被処
理体を支持する支持手段と、上記ベルジヤ内を排
気するための排気口とを備え、上記ベルジヤ内に
導入された反応ガスをガスプラズマ化して上記被
処理体をプラズマ処理するプラズマ処理装置にお
いて、 排気口を、支持手段の外周囲を相対的に囲む第
1の排気口と上記支持手段に支持された被処理体
の中央部に対向配置された第2の排気口とから構
成し且つガス導入口を上記第2の排気口の周囲を
囲んで配置したことを特徴とするプラズマ処理装
置。 (2) 第1及び第2の排気口からベルジヤ外に導
出した排気経路上の排気量を各々個別に調整する
排気量調整手段を備えたことを特徴とする実用新
案登録請求の範囲第1項記載のプラズマ処理装置
。[Claims for Utility Model Registration] (1) A gas inlet for introducing a reaction gas into the bell gear, a support means disposed opposite to the gas inlet to support the object to be processed, and a means for evacuating the inside of the bell gear. In a plasma processing apparatus for plasma processing the object to be processed by converting a reaction gas introduced into the bell gear into gas plasma, the exhaust port relatively surrounds the outer periphery of the support means. It is composed of a first exhaust port and a second exhaust port disposed opposite to the center of the object to be processed supported by the support means, and the gas introduction port is arranged surrounding the second exhaust port. A plasma processing device characterized by: (2) Utility model registration claim 1, characterized in that it is provided with an exhaust amount adjusting means for individually adjusting the exhaust amount on the exhaust path led out from the first and second exhaust ports to the outside of the bell gear. The plasma processing apparatus described.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13139887U JPS6437035U (en) | 1987-08-31 | 1987-08-31 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13139887U JPS6437035U (en) | 1987-08-31 | 1987-08-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6437035U true JPS6437035U (en) | 1989-03-06 |
Family
ID=31387427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13139887U Pending JPS6437035U (en) | 1987-08-31 | 1987-08-31 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6437035U (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100935144B1 (en) * | 2006-12-20 | 2010-01-06 | 세이코 엡슨 가부시키가이샤 | Plasma processing apparatus |
JPWO2014129246A1 (en) * | 2013-02-21 | 2017-02-02 | 株式会社 イアス | Substrate etching apparatus and substrate analysis method |
JP2018021216A (en) * | 2016-08-01 | 2018-02-08 | 東京エレクトロン株式会社 | Film deposition apparatus |
-
1987
- 1987-08-31 JP JP13139887U patent/JPS6437035U/ja active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100935144B1 (en) * | 2006-12-20 | 2010-01-06 | 세이코 엡슨 가부시키가이샤 | Plasma processing apparatus |
JPWO2014129246A1 (en) * | 2013-02-21 | 2017-02-02 | 株式会社 イアス | Substrate etching apparatus and substrate analysis method |
JP2018021216A (en) * | 2016-08-01 | 2018-02-08 | 東京エレクトロン株式会社 | Film deposition apparatus |