JPH069490Y2 - Plasma Wafer Plasma Semiconductor - Google Patents

Description

[Detailed Description of the Invention] [Industrial field of application] The present invention is a batch processing type plasma ashing for stripping a photoresist (hereinafter abbreviated as a resist) on a semiconductor wafer (hereinafter abbreviated as a wafer) in a semiconductor photolithography process. The present invention relates to an apparatus, and more particularly, to a structure of a chamber for containing and processing a wafer.

[Conventional technology]

Conventionally, in this type of plasma ashing apparatus, in the gas supply section, the gas is introduced into the chamber through a large number of holes in order to make the introduction of the gas in the chamber uniform, and the diameter of the hole is adjusted to the external pipe for gas supply The diameter was reduced toward the connecting portion, and the hole diameter was increased with increasing distance from the connecting portion. On the other hand, on the exhaust side of the chamber, a plurality of exhaust holes having the same diameter are arranged to exhaust the inside of the chamber regardless of the position of the connection with the exhaust external pipe.

[Problems to be solved by the invention]

By the way, in the above-described conventional plasma ashing apparatus, the arrangement of the gas introduction holes of the gas supply unit is adapted to make the gas introduction into the chamber uniform, while the diameter of the exhaust hole of the exhaust unit is Because they are all arranged equally,
The closer to the external pipe connection for exhaust with high exhaust pressure, the larger the exhaust volume per unit time, and the farther to the external pipe connection with low exhaust pressure, the smaller the exhaust volume per unit time, so that the inside of the chamber is exhausted uniformly. It was impossible to do. Therefore, there is a drawback that uneven resist peeling occurs depending on the position in the chamber or uneven resist peeling occurs on the same wafer.

An object of the present invention is to provide a plasma ashing device that solves the above problems.

[Differences from the Prior Art of Invention]

In contrast to the above-described conventional plasma ashing device, the present invention has a structure in which the conventional gas supply unit is provided, and the exhaust hole diameter is reduced toward the connecting portion with the external pipe for exhausting, and the chamber is moved away from the connecting portion. The original content is to install an exhaust part having a plurality of exhaust holes with a larger exhaust outer diameter.

[Means for solving problems]

The present invention is a batch processing type plasma ashing for semiconductor wafers, which is provided with a gas supply unit in which a gas supply external pipe is connected to a body of a chamber for batch processing semiconductor wafers and a gas exhaust unit in which an exhaust external pipe is connected. In the device, each of the gas supply unit and the gas exhaust unit is provided with a large number of holes communicating with the inside of the chamber, and the hole diameter of each hole is proportional to the distance from the connecting portion of the gas supply external pipe or the exhaust external pipe. The plasma ashing apparatus for semiconductor wafers is characterized in that the diameter is increased.

〔Example〕

 Next, the present invention will be described with reference to the drawings.

(Embodiment 1) FIG. 1 is a view showing a first embodiment of the present invention.

FIG. 1A is a side view of the chamber, FIG. 1B is a front view, and FIG. 1C is a layout view of exhaust holes or gas introduction holes.

In FIG. 1, reference numeral 1 denotes a gas supply unit composed of an external gas supply pipe 2 and a gas introduction hole 3 opening in the chamber 7. Reference numeral 4 denotes an exhaust unit including an exhaust external pipe 5 and an exhaust hole 6 opening in the chamber 7. The chamber 7 is made of quartz, and the gas supply unit 1 is provided on the opposite surface of the body.
And the exhaust unit 4 are installed. Reference numeral 8 is a door that isolates and seals the chamber 7 from the outside air, and 9 is a sealing material. Reference numeral 10 is a high-frequency oscillator, and 11 is an electrode for applying high-frequency power from the high-frequency oscillator 10 to the chamber 7, which is installed outside the chamber 7.

In the embodiment, when the process is started, the inside of the chamber 7, which is separated and sealed from the outside air by the door 8 and the sealing material 9, is exhausted through the exhaust external pipe 5 and the exhaust hole 6 of the exhaust unit 4. When the inside of the chamber 7 reaches a certain degree of vacuum, the gas is supplied from the gas supply external pipe 2 of the gas supply unit 1, and the gas is introduced into the chamber 7 through the gas introduction hole 3. At this time, the gas supply external pipe 2 having a high gas pressure
Since the diameter of the gas introduction hole 3 is small in the vicinity of the connection part and the hole diameter is large at the position away from the connection part having a low gas pressure, the gas is uniformly introduced into the chamber 7. At the same time, since the diameter of the exhaust hole 6 near the connection portion of the exhaust external pipe 5 having a high exhaust pressure is small and the outer hole located away from the connection portion having a high exhaust pressure is large, the inside of the chamber 7 becomes uniform. Exhausted. When a certain degree of vacuum is reached in the chamber 7 by introducing the gas, high frequency power is applied to the chamber 7 by the high frequency oscillator 10 and the electrode 11, the gas becomes plasma, and the resist is stripped.

(Embodiment 2) FIG. 2 is a view showing a second embodiment of the present invention. Fig. 2
(a) is a side view, (b) is a front view, and (c) is a layout view of exhaust holes or gas introduction holes. The same components as those in FIG. 1 are designated by the same reference numerals and the description thereof will be omitted. In this embodiment as well, it goes without saying that the diameters of the gas introduction hole 3 and the exhaust hole opened in the chamber 7 are increased in proportion to the distance from the connecting portion of the respective external pipes.

In this embodiment, the gas supply unit 1 is installed on the upper surface and the lower surface of the chamber 7, and the exhaust unit 4 is installed on the left surface and the right surface of the chamber 7, respectively. Is more uniform, and peeling due to the position inside the chamber 7 can be made more uniform.

[Effect of device]

As described above, according to the present invention, the diameter of the hole communicating with the chamber is increased in proportion to the distance from the connection portion of the external pipe on both the gas supply side and the exhaust side, so that it is uniform over the entire chamber. In addition, gas can be introduced and exhausted, and peeling unevenness due to the position in the chamber can be removed.

[Brief description of drawings]

FIG. 1 shows a first embodiment of the present invention, and FIG. 2 shows a second embodiment. (A) of FIGS. 1 and 2 is a side view, (b) is a front view, c) is a layout view of exhaust holes or gas introduction holes. 1 ... Gas supply part, 2 ... Gas supply external pipe 3 ... Gas introduction hole, 4 ... Exhaust part 5 ... Exhaust pipe, 6 ... Exhaust hole 7 ... Chamber, 8 ... Door 9 …… Seal material, 10 …… High frequency oscillator 11 …… Electrode

Claims (1)

[Scope of utility model registration request] 1. A gas supply unit in which a gas supply external pipe is connected to a body of a chamber for batch processing semiconductor wafers,
In a batch processing type plasma ashing apparatus for semiconductor wafers, which is provided with a gas exhaust unit to which an external exhaust pipe is connected, the gas supply unit and the gas exhaust unit are provided with a large number of holes that communicate with the inside of the chamber. The semiconductor wafer plasma ashing device is characterized in that the hole diameter of the semiconductor wafer is enlarged in proportion to the distance from the connection portion of the gas supply external pipe or the exhaust external pipe.