JPS6316625A - Electrode for dry etching - Google Patents
Electrode for dry etchingInfo
- Publication number
- JPS6316625A JPS6316625A JP16134186A JP16134186A JPS6316625A JP S6316625 A JPS6316625 A JP S6316625A JP 16134186 A JP16134186 A JP 16134186A JP 16134186 A JP16134186 A JP 16134186A JP S6316625 A JPS6316625 A JP S6316625A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- silicon wafer
- annular member
- etching
- ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001312 dry etching Methods 0.000 title claims description 16
- 238000005530 etching Methods 0.000 abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 19
- 229910052710 silicon Inorganic materials 0.000 abstract description 19
- 239000010703 silicon Substances 0.000 abstract description 19
- 230000005684 electric field Effects 0.000 abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 abstract 3
- 229910015844 BCl3 Inorganic materials 0.000 abstract 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、平行平板電極を有するドライエ、ノチング装
置において、被処理物を載置する電極構造に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an electrode structure on which a workpiece is placed in a dryer and notching apparatus having parallel plate electrodes.
従来の技術
近年、半導体ウエノ・などに代表されるノくターン形成
においては、素子の高集積１ヒ、微細化に伴なって高精
度なエツチングを行なうために、平行平板電極；てよる
反応性イオンエツチングによるドライエツチング装置が
用いられている。Conventional technology In recent years, parallel plate electrodes; A dry etching device using ion etching is used.
以下図面を参照しなか、ら、上述した従来のドライエツ
チング装置用電極の一例について説明する。An example of the above-mentioned conventional electrode for a dry etching apparatus will be described below with reference to the drawings.
第５図は従来のドライエツチング装置用電極の構成を示
すものでやる。第３図において、１３は１３．５６！１
ｔ＆の高周波電力を印加する下部電極であり、１４は下
部電極１３と平行に設けられた上部電極で接地されてい
る。１６は被エツチング物であるシリコンウェハ、１６
はシリコンウェハ１５の外周部に設けた電界補正リング
である。FIG. 5 shows the structure of an electrode for a conventional dry etching device. In Figure 3, 13 is 13.56!1
This is a lower electrode to which high frequency power of t& is applied, and 14 is an upper electrode provided in parallel with the lower electrode 13 and is grounded. 16 is a silicon wafer to be etched, 16
is an electric field correction ring provided on the outer periphery of the silicon wafer 15.
以上のように構成されたドライエツチング装置用電極に
ついて説明する。シリコンウェハ１６は、下部電極１３
上でエツチングされ、外周に設けた電界補正リングによ
り、シリコンウェハ１５の外周部での電界の乱れが補正
され、中央部と外周部でのエツチング速度の差が最小に
なるよう構成さウェハの中央部と外周部の電界の乱れの
みを補正しようとしたものであり、エツチングガスのイ
オンだけでなく、ラジカルによる反応がある場合には、
シリコンウェハ外周部で、ガス流れの乱れが発生し均一
なエツチング速度が得られないばかりでなく、エツチン
グにより発生した反応生成物が、ガス流れの停滞により
再付着するという問題点を有していた。The electrode for a dry etching apparatus constructed as above will be explained. The silicon wafer 16 has a lower electrode 13
The electric field correction ring provided on the outer periphery corrects disturbances in the electric field at the outer periphery of the silicon wafer 15, and is configured so that the difference in etching speed between the center and outer periphery is minimized. This is an attempt to correct only disturbances in the electric field at the inner and outer edges, and if there is a reaction not only with etching gas ions but also with radicals,
Not only is it impossible to obtain a uniform etching speed due to disturbances in the gas flow around the outer periphery of the silicon wafer, but there is also the problem that reaction products generated during etching re-deposit due to stagnation of the gas flow. .
本発明は上記問題点に鑑み、シリコンウニノー外周部で
、のエツチングガスの停滞をなくシ、エツチング速度の
均一性を向上したドライエツチング用電極を提供するも
のである。SUMMARY OF THE INVENTION In view of the above problems, the present invention provides a dry etching electrode that eliminates stagnation of etching gas at the outer periphery of silicon etching and improves the uniformity of etching rate.
問題点を解決するための手段
上記問題点を解決するために本発明のドライエツチング
装置用電極は、下部電極の外周部に、被処理物よりも高
い面を有するリング状部材を設け、さらにリング状部材
に内周部から外周部まで抜ける空間を設けたものである
。Means for Solving the Problems In order to solve the above problems, the electrode for a dry etching apparatus of the present invention is provided with a ring-shaped member having a surface higher than the object to be processed on the outer periphery of the lower electrode. A space is provided in the shaped member to extend from the inner circumference to the outer circumference.
作 用
本発明は、上記した構成によって、ウェハ外周部での電
界の乱れを補正するとともに、エツチングガスの停滞を
防ぐものである。Operation The present invention corrects disturbances in the electric field at the outer periphery of the wafer and prevents stagnation of etching gas using the above-described configuration.
実施例
以下本発明の一実施例のドライエツチング装置用電極に
ついて１図面を参照にしながら説明する。EXAMPLE Hereinafter, an electrode for a dry etching apparatus according to an embodiment of the present invention will be described with reference to one drawing.
第１図は本発明の第１の実施例のドライエツチング装置
の構成を示すものである。第１図において１はアルミナ
でできたリング状部材で、２はリング状部材１のウェハ
を置く電極と接触する面に設けた放射状の溝である。３
は高周波電力を印加する下部電極で、４は下部電極４を
保持するアルミナでできた絶縁リングである。６は１３
．６６Ｓｔｈの高周波電源で、下部電極３に接続されて
いる。FIG. 1 shows the structure of a dry etching apparatus according to a first embodiment of the present invention. In FIG. 1, 1 is a ring-shaped member made of alumina, and 2 is a radial groove provided on the surface of the ring-shaped member 1 that comes into contact with an electrode on which a wafer is placed. 3
4 is a lower electrode to which high frequency power is applied, and 4 is an insulating ring made of alumina that holds the lower electrode 4. 6 is 13
．． It is connected to the lower electrode 3 with a high frequency power source of 66Sth.
６は被エツチング物であるシリコンウェハである。6 is a silicon wafer which is an object to be etched.
７は下部電極３と平行に設けた上部電極でちり接地され
ている。８は上部電極を通してエツチングガスを導入す
るためのガス導入口である。９は上部電極７に設けた中
空部であり、１ｏは下部電極に対向する面に設けた複数
のガス吹き孔である。7 is an upper electrode provided parallel to the lower electrode 3 and is grounded to dust. 8 is a gas inlet for introducing etching gas through the upper electrode. 9 is a hollow portion provided in the upper electrode 7, and 1o is a plurality of gas blowing holes provided on the surface facing the lower electrode.
１１は内部を真空に保つ真空容器であり、１２は真空ポ
ンプなどの真空排気手段に接続された真空排気口である
。Reference numeral 11 denotes a vacuum container for keeping the inside vacuum, and reference numeral 12 denotes a vacuum exhaust port connected to evacuation means such as a vacuum pump.
第２図はリング状部材の外観を示すもので、リング状部
材１に、等間隔で１６分割の放射状の溝２を設けたもの
である。 □
以上のように構成されたドライエツチング装置について
、以下第１図を用いてその動作を説明する。FIG. 2 shows the appearance of a ring-shaped member, in which a ring-shaped member 1 is provided with 16 radial grooves 2 at equal intervals. □ The operation of the dry etching apparatus configured as described above will be explained below using FIG. 1.
まず第１図はドライエツチング装置の構成を示すもので
あって１例えばアルミニウム膜上にレジメトパターンの
形成されたシリコンウェハｅの場合、上部電極より、エ
ツチングガスとして。First, FIG. 1 shows the configuration of a dry etching apparatus. 1 For example, in the case of a silicon wafer e on which a regiment pattern is formed on an aluminum film, an etching gas is supplied from the upper electrode.
ＢＣＩ ３（１ｏｓｃｃ／分）、（Ｊ２（３ｏｃｃ／分
）、Ｎ２（６０ＣＣ／分が供給され、内部圧力を０，２
Ｔｏｒｒに制御される。BCI 3 (1 oscc/min), (J2 (3 occ/min), N2 (60 cc/min) were supplied, and the internal pressure was set to 0.2
Controlled by Torr.
次に下部電極３に高周波電力２６０Ｗを印加すると、上
部電極間でグロー放電によるプラダ→が発生しシリコン
ウェハ上のレジストパターンのない部分のアルミニウム
膜がエツチングされる。このときシリコンウェハ・外周
部においては、リング状−部材１によって電界の乱れが
補正され、均一なエツチング速度が得られるとともに、
シリコンウェハ６の外周部とリング状部材１の内面との
段差部においては、放射状に設けた溝２によって、エツ
チングガスが停滞なく排気される。Next, when a high frequency power of 260 W is applied to the lower electrode 3, Prada is generated between the upper electrodes due to glow discharge, and the aluminum film on the silicon wafer where there is no resist pattern is etched. At this time, in the outer peripheral part of the silicon wafer, disturbances in the electric field are corrected by the ring-shaped member 1, and a uniform etching speed is obtained.
At the stepped portion between the outer peripheral portion of the silicon wafer 6 and the inner surface of the ring-shaped member 1, the etching gas is exhausted without stagnation due to the radially provided grooves 2.
以上のように本実施例によれば、下部電極上の外周部に
、放射状の複数の溝をもつリング状部材を設けることに
より、シリコンウェハ外周部とリング状部材内面との段
差部でのエツチングガスの停滞が防げるため、エツチン
グ速度の均一化と。As described above, according to this embodiment, by providing a ring-shaped member having a plurality of radial grooves on the outer periphery of the lower electrode, etching at the step between the outer periphery of the silicon wafer and the inner surface of the ring-shaped member is prevented. Prevents gas stagnation, resulting in uniform etching speed.
エツチングによる反応生成物の付着が防止できた。Adhesion of reaction products due to etching could be prevented.
（エツチング速度のデータを第６図に示す）第３図は本
発明の第２の実施例を示すドライエ） ツチ用電極のリ
ング状部材の斜視図である。同図において１ａはリング
状部材であり、２ａは放射状に設けた溝で１以上は第１
図の構成と同様なものである。第１図の構成と異なるの
は、放射状の溝２ａの内周部に被エツチング物よりも高
い位置まで同心円状の溝を設けた点であシ、シリコンウ
ェハ外周部でのリング状部材の溝により電界の乱れと部
分的なエツチングガスの停滞をさらに減少することがで
きる。(Etching rate data is shown in FIG. 6) FIG. 3 is a perspective view of a ring-shaped member of a dryer electrode showing a second embodiment of the present invention. In the figure, 1a is a ring-shaped member, 2a is a groove provided radially, and one or more grooves are a first groove.
The configuration is similar to that shown in the figure. The structure differs from the one shown in FIG. 1 in that concentric grooves are provided on the inner periphery of the radial grooves 2a to a position higher than the object to be etched, and the grooves of the ring-shaped member on the outer periphery of the silicon wafer are This further reduces disturbances in the electric field and partial stagnation of the etching gas.
第４図は、本発明の第３の実施例を示すドライエッチ用
電極のリング状部材の斜視図である。同図において１ｂ
はリング状部材であり、２ｂはリング状部材に等間隔で
あけた貫通穴で、以上は第１図の構成と同様なものであ
る。第１図の構成と異なるのはリング状部材に貫通穴を
等間隔で設けた点であり、シリコンウェハ外周部でのガ
スの停滞を減少できる。FIG. 4 is a perspective view of a ring-shaped member of a dry etching electrode showing a third embodiment of the present invention. In the same figure, 1b
2 is a ring-shaped member, and 2b is a through-hole formed at equal intervals in the ring-shaped member, which is the same as the structure shown in FIG. 1. The difference from the configuration shown in FIG. 1 is that the ring-shaped member is provided with through holes at equal intervals, which can reduce gas stagnation at the outer periphery of the silicon wafer.
なお実施例においてリング部材１はアルミナとしたが、
材質は石英、テフロン、ポリイミドなどの絶縁物または
、アルミニウムにアルマイト処理したものでもよく、要
は絶縁性のあるものであればよい。ｔた放射状に設けた
溝は１６分割としたが、シリコンウエノ・径や溝寸法に
応じて分割数を決めればよい。In the example, the ring member 1 was made of alumina, but
The material may be an insulating material such as quartz, Teflon, or polyimide, or aluminum treated with alumite, and in short, any material with insulation properties may be used. Although the radially provided grooves were divided into 16, the number of divisions may be determined depending on the diameter of the silicon wafer and the groove dimensions.
発明の効果
以上のように本発明は、ウエノ１を置く電極上の外周部
にリング状部材を設け、さらにリング状部材に内周部か
ら外周部に抜ける空間を設けることで、シリコンウェハ
外周部でのエツチングガスの停滞が防止でき、エツチン
グ速度の均一性が向上するとともに、エツチングによっ
て発生する反応生成物の再付着を防止することができる
。Effects of the Invention As described above, the present invention provides a ring-shaped member on the outer periphery of the electrode on which the wafer 1 is placed, and further provides a space in the ring-shaped member that passes from the inner periphery to the outer periphery, thereby reducing the wafer outer periphery. This prevents the etching gas from stagnation in the etching process, improves the uniformity of the etching rate, and prevents reaction products generated by etching from re-deposition.
第１図は本発明の一実施例におけるドラ、イエッチング
装置の断面図、第２図は本発明の第１の実施例における
リング状部材の斜視図、第３図は本発明の第２の実施例
におけるリング状部材の斜視図、第４図は本発明の第３
の実施例におけるリング状部材の斜視図、第５図は従来
のドライエツチング装置の電極部の断面図、第６図は従
来と本実施例とのエツチング状態を示すグラフである。
１．１ａ、１ｂ・・・・・・リング状部材、２，２ａ・
・・・・・溝、２ｂ・・・・・・貫通穴、３・・・・・
・下部電極。
代理人の氏名 弁理士 中 尾 敏 男ほか１名１−−
リングλム１干不天
第 ３ 図 １・−・
−９・１社告や不Ｘ２ａ、−−ジＪ１FIG. 1 is a cross-sectional view of a drive and etching device in one embodiment of the present invention, FIG. 2 is a perspective view of a ring-shaped member in the first embodiment of the present invention, and FIG. A perspective view of the ring-shaped member in the embodiment, FIG. 4 is the third embodiment of the present invention.
FIG. 5 is a sectional view of the electrode portion of the conventional dry etching apparatus, and FIG. 6 is a graph showing the etching states of the conventional dry etching apparatus and the present embodiment. 1.1a, 1b...Ring-shaped member, 2, 2a.
...Groove, 2b...Through hole, 3...
・Lower electrode. Name of agent: Patent attorney Satoshi Nakao and 1 other person 1--
Ring λ 1 3rd figure 1・-・
-9.1 company announcement and false X2a, --ji J1
Claims (1)
を置く電極の外周部に、被処理物よりも高い面を有する
リング状部材を設け、さらに前記リング状部材に内周部
から外周部まで抜ける空間を設けたことを特徴とするド
ライエッチング用電極。A ring-shaped member having a surface higher than the object to be processed is provided on the outer periphery of the electrode on which the object to be processed is placed in a dry etching apparatus having parallel plate electrodes, and a space extending from the inner periphery to the outer periphery of the ring-shaped member is provided. An electrode for dry etching characterized by being provided with.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16134186A JPS6316625A (en) | 1986-07-09 | 1986-07-09 | Electrode for dry etching |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16134186A JPS6316625A (en) | 1986-07-09 | 1986-07-09 | Electrode for dry etching |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6316625A true JPS6316625A (en) | 1988-01-23 |
Family
ID=15733238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16134186A Pending JPS6316625A (en) | 1986-07-09 | 1986-07-09 | Electrode for dry etching |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6316625A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02280324A (en) * | 1989-04-21 | 1990-11-16 | Fuji Electric Co Ltd | Dry etching method |
| JPH0574737A (en) * | 1990-04-25 | 1993-03-26 | Internatl Business Mach Corp <Ibm> | Processing apparatus having voltage driving electrode and particle collecting method |
| JPH0845899A (en) * | 1993-11-03 | 1996-02-16 | Internatl Business Mach Corp <Ibm> | Plasma etching tool |
| US5498313A (en) * | 1993-08-20 | 1996-03-12 | International Business Machines Corp. | Symmetrical etching ring with gas control |
| WO2003075333A1 (en) * | 2002-03-04 | 2003-09-12 | Ci Science, Inc. | Electrode for dry etching a wafer |
| KR100465877B1 (en) * | 2002-08-23 | 2005-01-13 | 삼성전자주식회사 | Etching apparatus of semiconductor |
| JP2021150319A (en) * | 2020-03-16 | 2021-09-27 | 東京エレクトロン株式会社 | Substrate processing device and substrate processing method |
-
1986
- 1986-07-09 JP JP16134186A patent/JPS6316625A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02280324A (en) * | 1989-04-21 | 1990-11-16 | Fuji Electric Co Ltd | Dry etching method |
| JPH0574737A (en) * | 1990-04-25 | 1993-03-26 | Internatl Business Mach Corp <Ibm> | Processing apparatus having voltage driving electrode and particle collecting method |
| US5498313A (en) * | 1993-08-20 | 1996-03-12 | International Business Machines Corp. | Symmetrical etching ring with gas control |
| JPH0845899A (en) * | 1993-11-03 | 1996-02-16 | Internatl Business Mach Corp <Ibm> | Plasma etching tool |
| WO2003075333A1 (en) * | 2002-03-04 | 2003-09-12 | Ci Science, Inc. | Electrode for dry etching a wafer |
| KR100465877B1 (en) * | 2002-08-23 | 2005-01-13 | 삼성전자주식회사 | Etching apparatus of semiconductor |
| JP2021150319A (en) * | 2020-03-16 | 2021-09-27 | 東京エレクトロン株式会社 | Substrate processing device and substrate processing method |
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